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TW200731005A - Photomask blank, photomask manufacturing method and semiconductor device manufacturing method - Google Patents

Photomask blank, photomask manufacturing method and semiconductor device manufacturing method

Info

Publication number
TW200731005A
TW200731005A TW095148884A TW95148884A TW200731005A TW 200731005 A TW200731005 A TW 200731005A TW 095148884 A TW095148884 A TW 095148884A TW 95148884 A TW95148884 A TW 95148884A TW 200731005 A TW200731005 A TW 200731005A
Authority
TW
Taiwan
Prior art keywords
light shielding
shielding film
photomask
dry etching
photomask blank
Prior art date
Application number
TW095148884A
Other languages
Chinese (zh)
Other versions
TWI397766B (en
Inventor
Takeyuki Yamada
Hiroyuki Iwashita
Masao Ushida
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200731005A publication Critical patent/TW200731005A/en
Application granted granted Critical
Publication of TWI397766B publication Critical patent/TWI397766B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Provided is a photomask blank by which the dry etching time is shortened by increasing the dry etching speed of a light shielding film, resist film reduction is suppressed, resolution and pattern accuracy (CD accuracy) are improved by thinning the resist film, and a light shielding film pattern having excellent cross-sectional shape is formed by the shortened dry etching time. The photomask blank has the light shielding film on a light transmitting substrate. The photomask blank is provided for dry etching which is applicable to a photomask manufacturing method wherein a light shielding film is patterned by dry-etching by using a mask pattern formed on the light shielding film as a mask. The light shielding film is composed of a material including mainly chromium (Cr) and nitrogen (N), and substantially has a diffraction peak of CrN(200) in X ray diffraction. Furthermore, the light shielding film includes nitrogen (N) substantially uniformly in the depth direction by having chromium (Cr) as reference.
TW095148884A 2005-12-26 2006-12-26 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device TWI397766B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005371908 2005-12-26

Publications (2)

Publication Number Publication Date
TW200731005A true TW200731005A (en) 2007-08-16
TWI397766B TWI397766B (en) 2013-06-01

Family

ID=38218026

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102117341A TWI451191B (en) 2005-12-26 2006-12-26 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
TW095148884A TWI397766B (en) 2005-12-26 2006-12-26 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW102117341A TWI451191B (en) 2005-12-26 2006-12-26 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device

Country Status (4)

Country Link
JP (2) JP4968740B2 (en)
KR (2) KR101319659B1 (en)
TW (2) TWI451191B (en)
WO (1) WO2007074806A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453531B (en) * 2008-06-25 2014-09-21 Hoya Corp Phase shift mask blank and phase shift mask
TWI472870B (en) * 2009-03-31 2015-02-11 Hoya Corp Mask substrate and transfer mask (2)
US9005851B2 (en) 2008-06-25 2015-04-14 Hoya Corporation Phase shift mask blank and phase shift mask

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304147B2 (en) 2008-03-31 2012-11-06 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
US8968972B2 (en) 2010-11-22 2015-03-03 Shin-Etsu Chemical Co., Ltd. Photomask blank, process for production of photomask, and chromium-containing material film
JP5739375B2 (en) 2012-05-16 2015-06-24 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask
JP5820766B2 (en) 2012-05-16 2015-11-24 信越化学工業株式会社 Photomask blank manufacturing method, photomask blank, photomask, and pattern transfer method
JP5795991B2 (en) * 2012-05-16 2015-10-14 信越化学工業株式会社 Photomask blank, photomask manufacturing method, and phase shift mask manufacturing method
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
JP6229466B2 (en) 2013-12-06 2017-11-15 信越化学工業株式会社 Photomask blank
JP6150299B2 (en) * 2014-03-30 2017-06-21 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2016057578A (en) * 2014-09-12 2016-04-21 信越化学工業株式会社 Photomask blank
KR102522452B1 (en) * 2015-03-19 2023-04-18 호야 가부시키가이샤 Mask blank, transfer mask, transfer mask manufacturing method and semiconductor device manufacturing method
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
JP6375269B2 (en) 2015-07-01 2018-08-15 信越化学工業株式会社 INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND PHOTOMASK MANUFACTURING METHOD
JP6451561B2 (en) * 2015-09-03 2019-01-16 信越化学工業株式会社 Photomask blank
JP6783551B2 (en) * 2016-05-20 2020-11-11 アルバック成膜株式会社 Manufacturing method of mask blanks
JP7115281B2 (en) * 2018-12-12 2022-08-09 信越化学工業株式会社 Photomask blank and photomask manufacturing method
WO2020261986A1 (en) * 2019-06-27 2020-12-30 Hoya株式会社 Thin film-attached substrate, multilayered reflective film-attached substrate, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05297570A (en) * 1992-04-20 1993-11-12 Toppan Printing Co Ltd Production of photomask blank
JPH0695362A (en) * 1992-09-10 1994-04-08 Toppan Printing Co Ltd Photomask blank
JP3166812B2 (en) * 1994-09-09 2001-05-14 凸版印刷株式会社 Halftone phase shift mask
JP3037941B2 (en) * 1997-12-19 2000-05-08 ホーヤ株式会社 Halftone type phase shift mask and halftone type phase shift mask blank
EP1022614B1 (en) * 1998-07-31 2012-11-14 Hoya Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP2983020B1 (en) * 1998-12-18 1999-11-29 ホーヤ株式会社 Halftone type phase shift mask blank and halftone type phase shift mask
JP2003195483A (en) * 2001-12-28 2003-07-09 Hoya Corp Photomask blank, photomask and method for manufacturing the same
KR101029162B1 (en) * 2003-02-03 2011-04-12 호야 가부시키가이샤 Pattern transfer method using photomask blanks, photomasks and photomasks
JP4405443B2 (en) * 2004-10-22 2010-01-27 信越化学工業株式会社 Photomask blank, photomask, and manufacturing method thereof
JP4766507B2 (en) * 2005-03-30 2011-09-07 Ｈｏｙａ株式会社 Phase shift mask blank and method of manufacturing phase shift mask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453531B (en) * 2008-06-25 2014-09-21 Hoya Corp Phase shift mask blank and phase shift mask
US9005851B2 (en) 2008-06-25 2015-04-14 Hoya Corporation Phase shift mask blank and phase shift mask
TWI472870B (en) * 2009-03-31 2015-02-11 Hoya Corp Mask substrate and transfer mask (2)
TWI502275B (en) * 2009-03-31 2015-10-01 Hoya Corp Mask substrate and transfer mask

Also Published As

Publication number Publication date
KR101333991B1 (en) 2013-11-27
WO2007074806A1 (en) 2007-07-05
JP2012108533A (en) 2012-06-07
KR101319659B1 (en) 2013-10-17
JP4968740B2 (en) 2012-07-04
TWI397766B (en) 2013-06-01
TW201341945A (en) 2013-10-16
KR20080089442A (en) 2008-10-06
JP5374599B2 (en) 2013-12-25
KR20120057612A (en) 2012-06-05
JPWO2007074806A1 (en) 2009-06-04
TWI451191B (en) 2014-09-01

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