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TW200506514A - Method for manufacturing gray tone mask, and gray tone mask - Google Patents

Method for manufacturing gray tone mask, and gray tone mask

Info

Publication number
TW200506514A
TW200506514A TW093118772A TW93118772A TW200506514A TW 200506514 A TW200506514 A TW 200506514A TW 093118772 A TW093118772 A TW 093118772A TW 93118772 A TW93118772 A TW 93118772A TW 200506514 A TW200506514 A TW 200506514A
Authority
TW
Taiwan
Prior art keywords
gray tone
tone mask
light
translucent
mask
Prior art date
Application number
TW093118772A
Other languages
Chinese (zh)
Other versions
TWI286663B (en
Inventor
Kazuhisa Imura
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200506514A publication Critical patent/TW200506514A/en
Application granted granted Critical
Publication of TWI286663B publication Critical patent/TWI286663B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An object of the present invention is to provide a method for manufacturing a gray tone mask in halftone film type being capable of manufacturing TFT in high quality. The present invention relates to a method for manufacturing gray tone mask having a light-shielding part, a transparent part, and a translucent part, comprising the steps of preparing a mask blank having a translucent film (22) and a light-shielding film (23) sequentially formed on a transparent substrate (21), forming a resist pattern (24a) of an area corresponding to the light-shielding part onto the mask blank and forming a light-shielding part onto the translucent film (22) by etching light-shielding film (23) with said resist pattern (24a) as a mask, and forming resist pattern (24b) onto an area at least comprising the translucent part, and subsequently forming the translucent part and transparent part by etching translucent film (22) with the said resist pattern (24b) as a mask.
TW093118772A 2003-06-30 2004-06-28 Method for manufacturing gray tone mask, and gray tone mask TWI286663B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003187960 2003-06-30

Publications (2)

Publication Number Publication Date
TW200506514A true TW200506514A (en) 2005-02-16
TWI286663B TWI286663B (en) 2007-09-11

Family

ID=34587128

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118772A TWI286663B (en) 2003-06-30 2004-06-28 Method for manufacturing gray tone mask, and gray tone mask

Country Status (4)

Country Link
JP (2) JP4729606B2 (en)
KR (3) KR101172645B1 (en)
CN (1) CN100337306C (en)
TW (1) TWI286663B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4587837B2 (en) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 Gray tone mask manufacturing method and gray tone mask
TWI395053B (en) * 2005-02-28 2013-05-01 Hoya Corp Gray level mask, and gray level mask blank
KR100800301B1 (en) * 2005-07-05 2008-02-01 주식회사 에스앤에스텍 Manufacturing method of gray tone blank mask and photo mask
KR100850511B1 (en) * 2005-12-22 2008-08-05 주식회사 에스앤에스텍 Process Method of Half Tone Blankmask
KR100812253B1 (en) * 2006-01-20 2008-03-10 주식회사 에스앤에스텍 Process Method of Gray Tone Photo Mask, Gray Tone Photo Mask and Gray Tone Blank Mask
CN1808267B (en) * 2006-02-13 2010-12-01 友达光电股份有限公司 Mask and manufacturing method and application thereof
KR100822296B1 (en) * 2006-04-10 2008-04-15 엘지마이크론 주식회사 Halftone mask having a multi-stage structure and a method of manufacturing the same
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP2009128558A (en) * 2007-11-22 2009-06-11 Hoya Corp Photomask and method for manufacturing photomask, and pattern transfer method
CN101738846B (en) * 2008-11-17 2012-02-29 北京京东方光电科技有限公司 Mask plate and preparation method thereof
KR101186890B1 (en) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 Half tone mask and method of manufacturig the same
CN101943854B (en) * 2009-07-03 2012-07-04 深圳清溢光电股份有限公司 Design method of half-exposure region of half-gray-scale mask plate and manufacture method thereof
KR101624436B1 (en) * 2011-12-21 2016-05-25 다이니폰 인사츠 가부시키가이샤 Large phase shift mask and method for manufacturing phase shift mask
JP6063650B2 (en) * 2012-06-18 2017-01-18 Hoya株式会社 Photomask manufacturing method
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
JP6157832B2 (en) * 2012-10-12 2017-07-05 Hoya株式会社 Electronic device manufacturing method, display device manufacturing method, photomask manufacturing method, and photomask
WO2014140046A2 (en) * 2013-03-12 2014-09-18 Micronic Mydata AB Mechanically produced alignment fiducial method and device
CN104849525B (en) * 2014-02-13 2017-12-01 上海和辉光电有限公司 Use the method for testing of test suite
KR102378211B1 (en) * 2015-06-23 2022-03-25 삼성디스플레이 주식회사 Mask and fabrication method of display device by using the mask
CN105529274B (en) * 2016-02-02 2018-10-26 京东方科技集团股份有限公司 Production method, array substrate and the display device of thin film transistor (TFT)
CN105717737B (en) * 2016-04-26 2019-08-02 深圳市华星光电技术有限公司 A kind of preparation method of mask plate and colored filter substrate
CN106887439A (en) * 2017-03-21 2017-06-23 上海中航光电子有限公司 Array base palte and preparation method thereof, display panel

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153083A (en) * 1990-12-05 1992-10-06 At&T Bell Laboratories Method of making phase-shifting lithographic masks
JPH0749410A (en) * 1993-08-06 1995-02-21 Dainippon Printing Co Ltd Gradation mask and its manufacture
JPH0764274A (en) * 1993-08-30 1995-03-10 Sony Corp Phase shift mask and its production
JPH0798493A (en) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd Phase shift mask and its production
JPH08106151A (en) * 1994-10-04 1996-04-23 Sony Corp Phase shift mask and its production
JPH0934099A (en) * 1995-07-25 1997-02-07 Hoya Corp Phase shift mask and its production
JPH0943830A (en) * 1995-08-03 1997-02-14 Hoya Corp Halftone type phase shift mask, halftone type phase shift mask blank as well as their production
JPH09258426A (en) * 1996-03-18 1997-10-03 Toshiba Corp Pattern forming method
KR100215850B1 (en) * 1996-04-12 1999-08-16 구본준 Half-tone phase shift mask and fabrication method thereof
JPH1064788A (en) * 1996-08-22 1998-03-06 Toshiba Corp Method of fabricating semiconductor device and mask for exposure
JPH1124231A (en) * 1997-07-01 1999-01-29 Sony Corp Halftone phase shift mask and its manufacture
JPH11289010A (en) * 1998-04-01 1999-10-19 Sony Corp Formation method for multilayer interconnection
JPH11295874A (en) * 1998-04-15 1999-10-29 Oki Electric Ind Co Ltd Manufacture of phase shift mask
JPH11327121A (en) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd Method for manufacturing halftone type phase shift mask and blank of halftone type phase shift mask
CN1139837C (en) * 1998-10-01 2004-02-25 三星电子株式会社 Film transistor array substrate for liquid crystal display and manufacture thereof
JP2001022048A (en) * 1999-07-07 2001-01-26 Toppan Printing Co Ltd Halftone type phase shift mask with shading region
JP3749083B2 (en) * 2000-04-25 2006-02-22 株式会社ルネサステクノロジ Manufacturing method of electronic device
JP2001324725A (en) * 2000-05-12 2001-11-22 Hitachi Ltd Liquid crystal display device and manufacturing method thereof
KR20020002089A (en) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 Method of manufacturing lcd with high aperture ratio
JP2002189281A (en) * 2000-12-19 2002-07-05 Hoya Corp Gray tone mask and method for producing the same
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP3831868B2 (en) * 2001-08-13 2006-10-11 大林精工株式会社 Active matrix display device and manufacturing method thereof
JP2003255510A (en) * 2002-03-01 2003-09-10 Hitachi Ltd Electronic device manufacturing method

Also Published As

Publication number Publication date
KR20050002662A (en) 2005-01-10
JP2008282046A (en) 2008-11-20
CN100337306C (en) 2007-09-12
CN1577085A (en) 2005-02-09
TWI286663B (en) 2007-09-11
KR101172645B1 (en) 2012-08-08
JP4806701B2 (en) 2011-11-02
KR101182038B1 (en) 2012-09-11
JP2008310367A (en) 2008-12-25
KR20070038493A (en) 2007-04-10
JP4729606B2 (en) 2011-07-20
KR20110122654A (en) 2011-11-10
KR101215742B1 (en) 2012-12-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees