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TW200634134A - Etching liquid composition - Google Patents

Etching liquid composition

Info

Publication number
TW200634134A
TW200634134A TW095105030A TW95105030A TW200634134A TW 200634134 A TW200634134 A TW 200634134A TW 095105030 A TW095105030 A TW 095105030A TW 95105030 A TW95105030 A TW 95105030A TW 200634134 A TW200634134 A TW 200634134A
Authority
TW
Taiwan
Prior art keywords
liquid composition
etching liquid
thin film
acetic acid
acid
Prior art date
Application number
TW095105030A
Other languages
Chinese (zh)
Other versions
TWI402330B (en
Inventor
Kenji Kuroiwa
Masaru Kato
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of TW200634134A publication Critical patent/TW200634134A/en
Application granted granted Critical
Publication of TWI402330B publication Critical patent/TWI402330B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)

Abstract

The object of the present invention is to provide an etching liquid composition for metallic thin film and metallic oxide thin film for producing an electronic device such as semiconductor device and flat panel display device, which does not contain acetic acid, does not have irritating odor, and changes little in performance. The solution is the etching liquid composition comprising phosphoric acid, nitric acid, methoxy acetic acid, and water.
TW095105030A 2005-03-11 2006-02-15 Etching liquid composition TWI402330B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005069252A JP4528164B2 (en) 2005-03-11 2005-03-11 Etching solution composition

Publications (2)

Publication Number Publication Date
TW200634134A true TW200634134A (en) 2006-10-01
TWI402330B TWI402330B (en) 2013-07-21

Family

ID=37093620

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105030A TWI402330B (en) 2005-03-11 2006-02-15 Etching liquid composition

Country Status (4)

Country Link
JP (1) JP4528164B2 (en)
KR (1) KR101299254B1 (en)
CN (1) CN100543188C (en)
TW (1) TWI402330B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5158339B2 (en) * 2007-12-11 2013-03-06 東ソー株式会社 Etching composition and etching method
JP5228595B2 (en) * 2008-04-21 2013-07-03 ソニー株式会社 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME, LAMINATED STRUCTURE AND METHOD FOR FORMING THE SAME
KR101531688B1 (en) * 2008-11-12 2015-06-26 솔브레인 주식회사 Transparency etching solution
JP2010242124A (en) * 2009-04-01 2010-10-28 Tosoh Corp Etching composition and etching method
EP2446067B1 (en) * 2009-06-25 2019-11-20 3M Innovative Properties Company Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles
CN104630775B (en) * 2015-02-15 2017-06-09 东南大学 A kind of large-scale preparation method of heat exchanger aluminium foil fins set super hydrophobic surface
CN104893728B (en) * 2015-04-10 2018-11-27 深圳新宙邦科技股份有限公司 A kind of etching solution of the low-tension for ITO/Ag/ITO film
CN107099799A (en) * 2017-03-31 2017-08-29 李世华 A kind of chlorination copper etchant solution and preparation method thereof
CN112852429B (en) * 2021-01-08 2022-09-09 绵阳艾萨斯电子材料有限公司 Silver metal thin film layer etching solution and preparation and application thereof
JP7569252B2 (en) 2021-03-26 2024-10-17 花王株式会社 Method for storing etching solution composition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
WO2003005115A1 (en) * 2001-07-06 2003-01-16 Samsung Electronics Co., Ltd. An etchant for a wire, a method for manufacturing the wire and a method for manufacturing a thin film transistor array panel including the method
KR100924479B1 (en) * 2001-07-23 2009-11-03 소니 가부시끼 가이샤 Etching Method and Etching Liquid
CN1476489A (en) * 2001-10-09 2004-02-18 长濑化成株式会社 Etchant composition
US20030168431A1 (en) * 2002-02-25 2003-09-11 Ritdisplay Corporation Etchant composition for silver alloy
JP2004137586A (en) * 2002-10-21 2004-05-13 Mitsubishi Chemicals Corp Etching liquid, and etching method
JP4478383B2 (en) * 2002-11-26 2010-06-09 関東化学株式会社 Etching solution composition for metal thin film mainly composed of silver
JP2004238656A (en) * 2003-02-04 2004-08-26 Kobe Steel Ltd Etching liquid for silver thin film, and etching method and pattern forming method for silver thin film using the etching liquid
JP2005206903A (en) * 2004-01-23 2005-08-04 Kanto Chem Co Inc Etchant composition

Also Published As

Publication number Publication date
KR20060098328A (en) 2006-09-18
CN100543188C (en) 2009-09-23
CN101033549A (en) 2007-09-12
JP2006253473A (en) 2006-09-21
TWI402330B (en) 2013-07-21
KR101299254B1 (en) 2013-08-22
JP4528164B2 (en) 2010-08-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees