TW200630316A - A composition for forming a thick film conductor - Google Patents
A composition for forming a thick film conductorInfo
- Publication number
- TW200630316A TW200630316A TW095105210A TW95105210A TW200630316A TW 200630316 A TW200630316 A TW 200630316A TW 095105210 A TW095105210 A TW 095105210A TW 95105210 A TW95105210 A TW 95105210A TW 200630316 A TW200630316 A TW 200630316A
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- al2o3
- powder
- composition
- li2o
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 title abstract 2
- 239000000843 powder Substances 0.000 abstract 9
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
Abstract
This invention provides a composition for forming a thick film conductor, which almost does not cause solder biting (i.e. solder corrosion) and is lead-free. The composition comprises a conductive powder, an oxide powder and an organic vehicle, wherein the oxide powder comprises SiO2-B2O3-Al2O3-CaO-Li2O based glass powder and Al2O3 powder; the SiO2-B2O3-Al2O3-CaO-Li2O based glass powder comprises 20-60 mass% of SiO2, 2-25 mass% of B2O3, 2-25 mass% of Al2O3, 20-50 mass% of CaO, and 0.1-10 mass% of Li2O. Compared to 100 parts by mass of the conductive powder, the SiO2-B2O3-Al2O3-CaO-Li2O based glass powder is 0.1-15 parts by mass and the Al2O3 powder is 0.1-8 parts by mass.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005041048A JP4466402B2 (en) | 2005-02-17 | 2005-02-17 | Thick film conductor composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200630316A true TW200630316A (en) | 2006-09-01 |
| TWI312770B TWI312770B (en) | 2009-08-01 |
Family
ID=36923472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95105210A TWI312770B (en) | 2005-02-17 | 2006-02-16 | A composition for forming a thick film conductor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4466402B2 (en) |
| CN (1) | CN1822240B (en) |
| TW (1) | TWI312770B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5488282B2 (en) * | 2010-07-13 | 2014-05-14 | 昭栄化学工業株式会社 | Conductive paste |
| JP5454414B2 (en) * | 2010-08-18 | 2014-03-26 | 住友金属鉱山株式会社 | Thick film conductor forming composition, thick film conductor formed using the composition, and chip resistor using the thick film conductor |
| WO2012176696A1 (en) * | 2011-06-21 | 2012-12-27 | 住友金属鉱山株式会社 | Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element |
| JP5673515B2 (en) * | 2011-12-12 | 2015-02-18 | 住友金属鉱山株式会社 | Thick film conductor forming composition, thick film conductor using the same, and method for producing the same |
| JP6114001B2 (en) * | 2012-10-26 | 2017-04-12 | 京セラ株式会社 | Conductive paste, circuit board and electronic device |
| CN103456388B (en) * | 2013-08-06 | 2017-11-07 | 浙江光达电子科技有限公司 | It is a kind of that the thick film ink of insulating barrier can be generated on solar silicon wafers |
| JP6201190B2 (en) | 2014-04-25 | 2017-09-27 | 住友金属鉱山株式会社 | Thick film conductor forming composition and thick film conductor obtained using the same |
| JP2016219256A (en) * | 2015-05-20 | 2016-12-22 | 住友金属鉱山株式会社 | Cu paste composition and thick film conductor |
| US10636541B2 (en) | 2015-10-01 | 2020-04-28 | Shoei Chemical Inc. | Conductive paste and method for forming terminal electrodes of multilayer ceramic component |
| CN106229028B (en) * | 2016-08-18 | 2017-11-28 | 贵研铂业股份有限公司 | A kind of tubular oxygen sensor burning platinum slurry and preparation method thereof altogether |
| CN110714133B (en) * | 2019-10-22 | 2021-12-21 | 西安宏星电子浆料科技股份有限公司 | Silver palladium alloy powder for conductive composition and preparation method thereof |
| CN110970151B (en) * | 2019-12-18 | 2021-03-30 | 广东顺德弘暻电子有限公司 | High-weldability anti-warping thick film conductor slurry for stainless steel base material and preparation method thereof |
| CN113707359B (en) * | 2021-09-09 | 2023-04-28 | 南京汇聚新材料科技有限公司 | Electrode paste, conductive thick film and preparation method thereof |
| TWI839636B (en) * | 2021-09-09 | 2024-04-21 | 大陸商南京匯聚新材料科技有限公司 | Electrode paste and method of preparing conductive thick film therefrom |
| CN116354604A (en) * | 2023-05-31 | 2023-06-30 | 江苏精瓷智能传感技术研究院有限公司 | Preparation method of glass ceramic sealing material for platinum resistance film temperature sensing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1213441C (en) * | 2003-03-07 | 2005-08-03 | 中国科学院上海硅酸盐研究所 | lead-free thick film conductor paste composition for aluminum nitride substrate |
-
2005
- 2005-02-17 JP JP2005041048A patent/JP4466402B2/en not_active Expired - Lifetime
-
2006
- 2006-01-26 CN CN 200610006955 patent/CN1822240B/en active Active
- 2006-02-16 TW TW95105210A patent/TWI312770B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| CN1822240A (en) | 2006-08-23 |
| TWI312770B (en) | 2009-08-01 |
| JP4466402B2 (en) | 2010-05-26 |
| JP2006228572A (en) | 2006-08-31 |
| CN1822240B (en) | 2010-05-12 |
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