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TW200622494A - Photoresist composition for positive liquid crystal device - Google Patents

Photoresist composition for positive liquid crystal device

Info

Publication number
TW200622494A
TW200622494A TW094133633A TW94133633A TW200622494A TW 200622494 A TW200622494 A TW 200622494A TW 094133633 A TW094133633 A TW 094133633A TW 94133633 A TW94133633 A TW 94133633A TW 200622494 A TW200622494 A TW 200622494A
Authority
TW
Taiwan
Prior art keywords
substituted
liquid crystal
crystal device
photoresist composition
positive liquid
Prior art date
Application number
TW094133633A
Other languages
Chinese (zh)
Inventor
Toshikazu Murayama
Katsuhiro Ito
Masatsugu Komai
Yosiyuki Kato
Ryo Numazaki
Original Assignee
Kyowa Hakko Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyowa Hakko Chemical Co Ltd filed Critical Kyowa Hakko Chemical Co Ltd
Publication of TW200622494A publication Critical patent/TW200622494A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

This invention provides a photoresist composition for chemically amplified positive liquid crystal device, which is characterized by comprising (A) the polymer having the group represented by the following general formula (I), wherein R1, R2 and R3 are same or different, substituted or unsubstituted alkyl, substituted or unsubstituted aryl etc., X is O or NR(wherein, R is hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted aryl, or substituted or unsubstituted aralkyl), (B) the compound capable of generating acid by irradiating with radiation, and (C) organic solvent.
TW094133633A 2004-09-30 2005-09-28 Photoresist composition for positive liquid crystal device TW200622494A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004285750 2004-09-30

Publications (1)

Publication Number Publication Date
TW200622494A true TW200622494A (en) 2006-07-01

Family

ID=36119069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133633A TW200622494A (en) 2004-09-30 2005-09-28 Photoresist composition for positive liquid crystal device

Country Status (3)

Country Link
JP (1) JPWO2006035926A1 (en)
TW (1) TW200622494A (en)
WO (1) WO2006035926A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2015311362B2 (en) * 2014-09-02 2020-04-30 Cspc Zhongqi Pharmaceutical Technology (Shijiazhuang) Co., Ltd. Pyrazolo[3,4-c]pyridine derivatives

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3787271B2 (en) * 2000-11-20 2006-06-21 東京応化工業株式会社 Fine resist hole pattern forming method
JP4048171B2 (en) * 2001-07-13 2008-02-13 協和発酵ケミカル株式会社 Method for producing ether compounds
JP2003330172A (en) * 2002-05-14 2003-11-19 Fuji Photo Film Co Ltd Positive photosensitive composition
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
JP3844069B2 (en) * 2002-07-04 2006-11-08 信越化学工業株式会社 Resist material and pattern forming method
TWI283335B (en) * 2002-08-20 2007-07-01 Kyowa Yuka Kk A composition with photo-sensibility of visible light
JP2004075864A (en) * 2002-08-20 2004-03-11 Kyowa Yuka Co Ltd Resin composition
JP4302585B2 (en) * 2003-10-08 2009-07-29 信越化学工業株式会社 Polymerizable compound, polymer compound, positive resist material and pattern forming method using the same

Also Published As

Publication number Publication date
WO2006035926A1 (en) 2006-04-06
JPWO2006035926A1 (en) 2008-05-15

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