[go: up one dir, main page]

TW200617151A - Polishing composition and polishing method using the same - Google Patents

Polishing composition and polishing method using the same

Info

Publication number
TW200617151A
TW200617151A TW094130674A TW94130674A TW200617151A TW 200617151 A TW200617151 A TW 200617151A TW 094130674 A TW094130674 A TW 094130674A TW 94130674 A TW94130674 A TW 94130674A TW 200617151 A TW200617151 A TW 200617151A
Authority
TW
Taiwan
Prior art keywords
polishing
same
polishing composition
composition
polishing method
Prior art date
Application number
TW094130674A
Other languages
English (en)
Other versions
TWI400324B (zh
Inventor
Kenji Sakamoto
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW200617151A publication Critical patent/TW200617151A/zh
Application granted granted Critical
Publication of TWI400324B publication Critical patent/TWI400324B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094130674A 2004-09-09 2005-09-07 研磨用組成物及其研磨方法 TWI400324B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004262759A JP4814502B2 (ja) 2004-09-09 2004-09-09 研磨用組成物及びそれを用いた研磨方法

Publications (2)

Publication Number Publication Date
TW200617151A true TW200617151A (en) 2006-06-01
TWI400324B TWI400324B (zh) 2013-07-01

Family

ID=35220792

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130674A TWI400324B (zh) 2004-09-09 2005-09-07 研磨用組成物及其研磨方法

Country Status (7)

Country Link
US (2) US20060049143A1 (zh)
JP (1) JP4814502B2 (zh)
KR (1) KR101205241B1 (zh)
CN (1) CN1746254B (zh)
DE (1) DE102005042096B4 (zh)
GB (1) GB2419134B (zh)
TW (1) TWI400324B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026665B2 (ja) 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR100839355B1 (ko) * 2006-11-28 2008-06-19 삼성전자주식회사 기판의 재생 방법
US8157876B2 (en) * 2007-07-31 2012-04-17 Cabot Microelectronics Corporation Slurry composition containing non-ionic polymer and method for use
CN101899265B (zh) * 2009-05-25 2013-12-25 长兴开发科技股份有限公司 用于移除锯痕的化学机械研磨组合物
US8367594B2 (en) * 2009-06-24 2013-02-05 Lam Research Corporation Damage free, high-efficiency, particle removal cleaner comprising polyvinyl alcohol particles
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
CN102477261B (zh) * 2010-11-26 2015-06-17 安集微电子（上海）有限公司 一种化学机械抛光液
KR101907229B1 (ko) 2011-02-03 2018-10-11 니타 하스 인코포레이티드 연마용 조성물 및 그것을 이용한 연마 방법
CN102358824B (zh) * 2011-07-29 2013-08-21 清华大学 一种用于硬盘盘基片超精密表面制造的抛光组合物
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
EP2662885A1 (en) * 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
EP2957613B1 (en) * 2013-02-13 2020-11-18 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
JP6482200B2 (ja) * 2014-07-18 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US10106705B1 (en) 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
JP7157651B2 (ja) * 2017-12-27 2022-10-20 ニッタ・デュポン株式会社 研磨用組成物
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN110561284B (zh) * 2019-09-09 2020-09-08 合肥工业大学 一种单晶蓝宝石加工用磨具及其制备工艺

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
JPS63272460A (ja) 1987-04-28 1988-11-09 Mitsubishi Monsanto Chem Co ウエハ−用研磨剤組成物
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
JP3290189B2 (ja) * 1991-04-11 2002-06-10 旭電化工業株式会社 シリコンウェハーの研磨方法
US5916819A (en) 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2000160139A (ja) * 1998-12-01 2000-06-13 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4188598B2 (ja) * 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
JP3551238B2 (ja) 1999-09-07 2004-08-04 三菱住友シリコン株式会社 シリコンウェーハの研磨液及びこれを用いた研磨方法
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US6733553B2 (en) * 2000-04-13 2004-05-11 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2002229762A (ja) * 2001-02-06 2002-08-16 Fuji Photo Film Co Ltd 画像形成システム
JP2002249762A (ja) * 2001-02-27 2002-09-06 Sanyo Chem Ind Ltd 研磨材用添加剤
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
JP4707864B2 (ja) * 2001-04-18 2011-06-22 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
CN1162498C (zh) * 2001-07-25 2004-08-18 长兴化学工业股份有限公司 化学机械研磨浆液组合物及其使用方法
US7367870B2 (en) * 2002-04-30 2008-05-06 Hitachi Chemical Co. Ltd. Polishing fluid and polishing method
JP2004031443A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004071673A (ja) * 2002-08-02 2004-03-04 Nec Electronics Corp 銅系金属研磨スラリー
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP4593064B2 (ja) 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
US6733533B1 (en) * 2002-11-19 2004-05-11 Zimmer Technology, Inc. Artificial spinal disc
JP2004231748A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution

Also Published As

Publication number Publication date
DE102005042096A1 (de) 2006-04-13
JP2006080302A (ja) 2006-03-23
DE102005042096B4 (de) 2019-05-23
GB0517939D0 (en) 2005-10-12
CN1746254A (zh) 2006-03-15
CN1746254B (zh) 2011-09-21
US20060049143A1 (en) 2006-03-09
KR20060051110A (ko) 2006-05-19
KR101205241B1 (ko) 2012-11-27
JP4814502B2 (ja) 2011-11-16
US20090156008A1 (en) 2009-06-18
TWI400324B (zh) 2013-07-01
GB2419134A (en) 2006-04-19
GB2419134B (en) 2009-10-14

Similar Documents

Publication Publication Date Title
TW200617151A (en) Polishing composition and polishing method using the same
UA97126C2 (ru) Процесс шлифования сапфирной основы
TW200720383A (en) Polishing fluids and methods for CMP
AU2003246348A1 (en) Method for dividing semiconductor wafer
MY155900A (en) Cleaning and/or polishing compositions and method for use thereof
EP1580800A4 (en) SEMICONDUCTOR SUBSTRATE CUTTING METHOD
TW200725721A (en) Polishing method, polishing composition and polishing composition kit
AU2002354485A1 (en) Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
GEP20105081B (en) Pyrrolotriazine compounds as kinase inhibitors
MY145601A (en) Silicon carbide polishing method utilizing water-soluble oxidizers
TW200731381A (en) Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
EP1950263A3 (en) Polishing composition and polishing method
AU2003252444A1 (en) Method and device for polishing substrate
MY153685A (en) Composition and method to polish silicon nitride
MY150866A (en) Compositions and methods for polishing silicon nitride materials
EP1488286A4 (en) PH-BUFFERED COMPOSITIONS FOR CLEANING SEMICONDUCTOR SUBSTRATES
AU2003272969A1 (en) Method for forming semiconductor film and use of semiconductor film
TW200709289A (en) Wafer with fixing agent and method for producing the same
MY138243A (en) Process for the back-surface grinding of wafers.
WO2008120578A1 (ja) 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法
TW200729301A (en) AlxGayIn1-x-yN crystal substrate, semiconductor device, and method for manufacturing the same
TW200621960A (en) Polishing composition and polishing method using the same
AU2003254825A1 (en) Cmp abrasive and substrate polishing method
TW200705281A (en) IC chip mounting method
TW200517477A (en) Chemical mechanical abrasive slurry and method of using the same