TW200614490A - Multi-layer capacitance semiconductor structure and fabrication method thereof - Google Patents
Multi-layer capacitance semiconductor structure and fabrication method thereofInfo
- Publication number
- TW200614490A TW200614490A TW093132895A TW93132895A TW200614490A TW 200614490 A TW200614490 A TW 200614490A TW 093132895 A TW093132895 A TW 093132895A TW 93132895 A TW93132895 A TW 93132895A TW 200614490 A TW200614490 A TW 200614490A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal layers
- semiconductor structure
- capacitance
- fabrication method
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A multi-layer capacitance semiconductor structure and a fabrication method thereof are proposed. The semiconductor structure includes a base material; a sandwich layer formed on the base material, which is a three-layer structure including an insulation layer disposed between two metal layers, wherein one of the metal layers is divided into a plurality of electrode boards, and the other metal layer entirely serves as an electrode board; a passivation layer formed on the sandwich layer; and at least two conductor connected to the metal layers of the sandwich layer. The two metal layers of the sandwich layer forms a capacitance structure, and one of the metal layers is divided into a plurality of electrode boards to form a plurality of capacitance structures, thereby improving the capacity of capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93132895A TWI237896B (en) | 2004-10-29 | 2004-10-29 | Multi-layer capacitance semiconductor structure and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93132895A TWI237896B (en) | 2004-10-29 | 2004-10-29 | Multi-layer capacitance semiconductor structure and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI237896B TWI237896B (en) | 2005-08-11 |
| TW200614490A true TW200614490A (en) | 2006-05-01 |
Family
ID=36929988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93132895A TWI237896B (en) | 2004-10-29 | 2004-10-29 | Multi-layer capacitance semiconductor structure and fabrication method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI237896B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972258A (en) * | 2020-07-24 | 2022-01-25 | 瑞昱半导体股份有限公司 | Semiconductor device and metal oxide semiconductor capacitor structure |
| TWI841126B (en) * | 2022-08-21 | 2024-05-01 | 南亞科技股份有限公司 | Dynamic random access memory |
-
2004
- 2004-10-29 TW TW93132895A patent/TWI237896B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972258A (en) * | 2020-07-24 | 2022-01-25 | 瑞昱半导体股份有限公司 | Semiconductor device and metal oxide semiconductor capacitor structure |
| CN113972258B (en) * | 2020-07-24 | 2024-04-12 | 瑞昱半导体股份有限公司 | Semiconductor device and metal oxide semiconductor capacitor structure |
| TWI841126B (en) * | 2022-08-21 | 2024-05-01 | 南亞科技股份有限公司 | Dynamic random access memory |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI237896B (en) | 2005-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |