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TW200612656A - Dual-band power amplifier - Google Patents

Dual-band power amplifier

Info

Publication number
TW200612656A
TW200612656A TW093129877A TW93129877A TW200612656A TW 200612656 A TW200612656 A TW 200612656A TW 093129877 A TW093129877 A TW 093129877A TW 93129877 A TW93129877 A TW 93129877A TW 200612656 A TW200612656 A TW 200612656A
Authority
TW
Taiwan
Prior art keywords
dual
stage
power amplifier
band power
electrically connected
Prior art date
Application number
TW093129877A
Other languages
Chinese (zh)
Other versions
TWI248253B (en
Inventor
Sheng-Fuh Chang
Wen-Lin Chen
Wei-Yin Deng
Hung-Cheng Chen
Shu-Fen Tang
Albert Chen
Original Assignee
Sheng-Fuh Chang
Integrated Sys Solution Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sheng-Fuh Chang, Integrated Sys Solution Corp filed Critical Sheng-Fuh Chang
Priority to TW93129877A priority Critical patent/TWI248253B/en
Application granted granted Critical
Publication of TWI248253B publication Critical patent/TWI248253B/en
Publication of TW200612656A publication Critical patent/TW200612656A/en

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  • Amplifiers (AREA)

Abstract

The present invention discloses a dual-band power amplifier, capable of operating at a first frequency and a different second frequency. The dual-band power amplifier comprises a first gain stage; a second power stage; an input matching unit electrically connected between the first gain stage and a signal input port; an inter-stage matching unit electrically connected between the first gain stage and the second power stage and an output matching unit electrically connected between the second power stage and an output signal port. According to the dual-band power amplifier and the design formula of matching circuit of the present invention, the present invention can simplify the circuit structure and is suitable for various dual-band communication systems.
TW93129877A 2004-10-01 2004-10-01 Dual-band power amplifier TWI248253B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW93129877A TWI248253B (en) 2004-10-01 2004-10-01 Dual-band power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93129877A TWI248253B (en) 2004-10-01 2004-10-01 Dual-band power amplifier

Publications (2)

Publication Number Publication Date
TWI248253B TWI248253B (en) 2006-01-21
TW200612656A true TW200612656A (en) 2006-04-16

Family

ID=37400777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93129877A TWI248253B (en) 2004-10-01 2004-10-01 Dual-band power amplifier

Country Status (1)

Country Link
TW (1) TWI248253B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101867347B (en) * 2009-04-15 2012-12-12 中国科学院电子学研究所 Power amplifier circuit with reconfigurable frequency band in multi-band wireless mobile communication system
US10574196B2 (en) 2018-05-18 2020-02-25 Richwave Technology Corp. Amplifier device
CN111682858A (en) * 2020-06-09 2020-09-18 北京邮电大学 An InGaP/GaAs HBT dual-frequency power amplifier chip

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8300855B2 (en) 2008-12-30 2012-10-30 Beijing Funate Innovation Technology Co., Ltd. Thermoacoustic module, thermoacoustic device, and method for making the same
US8325947B2 (en) 2008-12-30 2012-12-04 Bejing FUNATE Innovation Technology Co., Ltd. Thermoacoustic device
CN101922755A (en) 2009-06-09 2010-12-22 清华大学 Heating wall
CN101990152B (en) 2009-08-07 2013-08-28 清华大学 Thermal sounding device and manufacturing method thereof
CN102006542B (en) 2009-08-28 2014-03-26 清华大学 Sound generating device
CN102023297B (en) 2009-09-11 2015-01-21 清华大学 Sonar system
CN102056064B (en) 2009-11-06 2013-11-06 清华大学 Loudspeaker
CN102056065B (en) 2009-11-10 2014-11-12 北京富纳特创新科技有限公司 Sound production device
CN102065363B (en) 2009-11-16 2013-11-13 北京富纳特创新科技有限公司 Sound production device
CN103595357A (en) * 2013-10-17 2014-02-19 天津大学 0.1-1.2GHz CMOS (complementary metal oxide semiconductor) ultra-wideband radiofrequency power amplifier
US10250197B1 (en) * 2017-11-06 2019-04-02 Nxp Usa, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
CN108551332B (en) * 2018-02-09 2022-05-10 沃勤科技有限公司 Power amplifier with self-adaptive and adjustable frequency and bandwidth and adjusting method
CN109450394A (en) * 2018-09-20 2019-03-08 天津大学 A kind of compact high efficient twin-stage dual-band power amplifier
CN109286376A (en) * 2018-10-18 2019-01-29 成都嘉纳海威科技有限责任公司 A kind of high-efficiency double-frequency J class stacking power amplifier based on second harmonic control

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101867347B (en) * 2009-04-15 2012-12-12 中国科学院电子学研究所 Power amplifier circuit with reconfigurable frequency band in multi-band wireless mobile communication system
US10574196B2 (en) 2018-05-18 2020-02-25 Richwave Technology Corp. Amplifier device
CN111682858A (en) * 2020-06-09 2020-09-18 北京邮电大学 An InGaP/GaAs HBT dual-frequency power amplifier chip

Also Published As

Publication number Publication date
TWI248253B (en) 2006-01-21

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