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TW200611386A - Diffuser gravity support - Google Patents

Diffuser gravity support

Info

Publication number
TW200611386A
TW200611386A TW094130602A TW94130602A TW200611386A TW 200611386 A TW200611386 A TW 200611386A TW 094130602 A TW094130602 A TW 094130602A TW 94130602 A TW94130602 A TW 94130602A TW 200611386 A TW200611386 A TW 200611386A
Authority
TW
Taiwan
Prior art keywords
diffuser
gas
support member
delivery conduit
support
Prior art date
Application number
TW094130602A
Other languages
Chinese (zh)
Other versions
TWI287279B (en
Inventor
Ernst Keller
John M White
Robin L Tiner
Jiri Kucera
Soo-Young Choi
Beom Soo Park
Michael Starr
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/188,922 external-priority patent/US7429410B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200611386A publication Critical patent/TW200611386A/en
Application granted granted Critical
Publication of TWI287279B publication Critical patent/TWI287279B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.
TW094130602A 2004-09-20 2005-09-06 Diffuser gravity support TWI287279B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61151204P 2004-09-20 2004-09-20
US65361705P 2005-02-16 2005-02-16
US11/188,922 US7429410B2 (en) 2004-09-20 2005-07-25 Diffuser gravity support

Publications (2)

Publication Number Publication Date
TW200611386A true TW200611386A (en) 2006-04-01
TWI287279B TWI287279B (en) 2007-09-21

Family

ID=36072566

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130602A TWI287279B (en) 2004-09-20 2005-09-06 Diffuser gravity support

Country Status (4)

Country Link
JP (2) JP4662144B2 (en)
KR (2) KR101019766B1 (en)
CN (1) CN1758826B (en)
TW (1) TWI287279B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
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TWI486101B (en) * 2006-10-16 2015-05-21 Lam Res Corp Components for a plasma processing apparatus
CN113261078A (en) * 2019-01-07 2021-08-13 株式会社爱发科 Vacuum processing apparatus and method for cleaning vacuum processing apparatus

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AU2003245592A1 (en) 2002-06-21 2004-01-06 Applied Materials, Inc. Transfer chamber for vacuum processing system
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US8733279B2 (en) * 2007-02-27 2014-05-27 Applied Materials, Inc. PECVD process chamber backing plate reinforcement
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US8187414B2 (en) * 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
KR101444873B1 (en) * 2007-12-26 2014-09-26 주성엔지니어링(주) System for treatmenting substrate
US20100184290A1 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Substrate support with gas introduction openings
JP5578865B2 (en) * 2009-03-25 2014-08-27 東京エレクトロン株式会社 Cover fixing tool and cover fixing device for inductively coupled plasma processing apparatus
CN102598876B (en) * 2009-11-17 2018-05-04 应用材料公司 With the matched large area plasma processing chamber housings of RF at electrode
TWI485799B (en) * 2009-12-10 2015-05-21 沃博提克Lt太陽公司 Automatic sorting linear processing device
US9850576B2 (en) * 2010-02-15 2017-12-26 Applied Materials, Inc. Anti-arc zero field plate
US8721791B2 (en) * 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
KR101138210B1 (en) * 2010-08-12 2012-05-10 주식회사 동원파츠 Gas Distributor Plate and method for manufacturing the same
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
KR101352925B1 (en) * 2011-09-16 2014-01-22 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
KR101365075B1 (en) * 2011-11-02 2014-02-20 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
KR101935881B1 (en) * 2012-04-26 2019-01-08 주성엔지니어링(주) Treatment apparatus for large area substrate, Gas supplying apparatus for large area substrate and Showerhead support unit
KR101489354B1 (en) 2012-12-28 2015-02-03 주식회사 에스에프에이 Gas distribution assembly
KR101488878B1 (en) * 2012-12-28 2015-02-04 주식회사 에스에프에이 Gas distribution assembly
EP2937890B1 (en) * 2014-04-22 2020-06-03 Europlasma nv Plasma coating apparatus with a plasma diffuser and method preventing discolouration of a substrate
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
KR101490450B1 (en) * 2014-08-29 2015-02-09 주성엔지니어링(주) coupling unit for gas distribution plate fixation
JP2018528616A (en) * 2015-09-22 2018-09-27 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Shower head support structure
JP6662998B2 (en) * 2016-03-03 2020-03-11 コアテクノロジー株式会社 Plasma processing equipment
JP6822270B2 (en) * 2017-03-29 2021-01-27 トヨタ自動車株式会社 Film deposition equipment
JP7121121B2 (en) * 2018-06-20 2022-08-17 株式会社アルバック Vacuum processing equipment, support shaft
US10927461B2 (en) * 2018-08-31 2021-02-23 Applied Materials, Inc. Gas diffuser support structure for reduced particle generation
KR20220032608A (en) * 2019-07-15 2022-03-15 어플라이드 머티어리얼스, 인코포레이티드 Large Area High Density Plasma Processing Chamber for Flat Panel Displays
JP2023117775A (en) * 2022-02-14 2023-08-24 東京エレクトロン株式会社 Substrate processing equipment
WO2024137347A1 (en) * 2022-12-21 2024-06-27 Applied Materials, Inc. Tunable hardware to control radial flow distribution in a processing chamber

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US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2969596B2 (en) * 1989-10-06 1999-11-02 アネルバ株式会社 CVD equipment
JP3468859B2 (en) * 1994-08-16 2003-11-17 富士通株式会社 Gas phase processing apparatus and gas phase processing method
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
JPH10134997A (en) * 1996-10-24 1998-05-22 Samsung Electron Co Ltd Plasma processing apparatus that eliminates discharge due to secondary potential
JP3595853B2 (en) * 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 Plasma CVD film forming equipment
JP4547125B2 (en) * 1999-05-13 2010-09-22 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
WO2001083852A1 (en) * 2000-04-28 2001-11-08 Tokyo Electron Limited Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
KR100332314B1 (en) * 2000-06-24 2002-04-12 서성기 Reactor for depositing thin film on wafer
JP3935401B2 (en) * 2002-07-22 2007-06-20 東京エレクトロン株式会社 Inductively coupled plasma processing equipment
CN1230044C (en) * 2002-11-14 2005-11-30 友达光电股份有限公司 Plasma processing apparatus
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
KR100592682B1 (en) * 2004-02-23 2006-06-28 주성엔지니어링(주) Substrate manufacturing equipment for display device and gas injection device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486101B (en) * 2006-10-16 2015-05-21 Lam Res Corp Components for a plasma processing apparatus
CN113261078A (en) * 2019-01-07 2021-08-13 株式会社爱发科 Vacuum processing apparatus and method for cleaning vacuum processing apparatus
US11901162B2 (en) 2019-01-07 2024-02-13 Ulvac, Inc. Vacuum processing apparatus and method of cleaning vacuum processing apparatus

Also Published As

Publication number Publication date
KR101019766B1 (en) 2011-03-08
CN1758826B (en) 2010-05-05
JP5105335B2 (en) 2012-12-26
KR101019845B1 (en) 2011-03-04
CN101921997A (en) 2010-12-22
JP2006121057A (en) 2006-05-11
TWI287279B (en) 2007-09-21
CN1758826A (en) 2006-04-12
KR20100082334A (en) 2010-07-16
KR20060092886A (en) 2006-08-23
JP2010013733A (en) 2010-01-21
JP4662144B2 (en) 2011-03-30

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