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TW200604517A - Method and system for the inspection of a wafer - Google Patents

Method and system for the inspection of a wafer

Info

Publication number
TW200604517A
TW200604517A TW094119578A TW94119578A TW200604517A TW 200604517 A TW200604517 A TW 200604517A TW 094119578 A TW094119578 A TW 094119578A TW 94119578 A TW94119578 A TW 94119578A TW 200604517 A TW200604517 A TW 200604517A
Authority
TW
Taiwan
Prior art keywords
wafer
optical image
layer
image
edge bead
Prior art date
Application number
TW094119578A
Other languages
English (en)
Inventor
Henning Backhauss
Albert Kreh
Original Assignee
Leica Microsystems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leica Microsystems filed Critical Leica Microsystems
Publication of TW200604517A publication Critical patent/TW200604517A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G01N2021/8825—Separate detection of dark field and bright field
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Quality & Reliability (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094119578A 2004-06-16 2005-06-14 Method and system for the inspection of a wafer TW200604517A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004029012A DE102004029012B4 (de) 2004-06-16 2004-06-16 Verfahren zur Inspektion eines Wafers

Publications (1)

Publication Number Publication Date
TW200604517A true TW200604517A (en) 2006-02-01

Family

ID=34940020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119578A TW200604517A (en) 2004-06-16 2005-06-14 Method and system for the inspection of a wafer

Country Status (5)

Country Link
US (1) US20050280807A1 (zh)
EP (1) EP1607738A1 (zh)
JP (1) JP2006005360A (zh)
DE (1) DE102004029012B4 (zh)
TW (1) TW200604517A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI576576B (zh) * 2012-03-09 2017-04-01 克萊譚克公司 用於使用多點照射及多通道之晶圓檢測的系統
CN110838454A (zh) * 2018-08-16 2020-02-25 江德明 晶圆表面检测前处理装置及应用其的晶圆表面检测设备
CN111564382A (zh) * 2020-04-08 2020-08-21 中国科学院微电子研究所 晶圆检测装置及检测方法

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US7280197B1 (en) * 2004-07-27 2007-10-09 Kla-Tehcor Technologies Corporation Wafer edge inspection apparatus
KR100719367B1 (ko) * 2005-06-24 2007-05-17 삼성전자주식회사 반도체 제조 장치 및 웨이퍼 가공 방법
JP4413831B2 (ja) * 2005-08-11 2010-02-10 株式会社日立ハイテクノロジーズ ウェハ表面検査装置及びウェハ表面検査方法
JP2007205864A (ja) * 2006-02-01 2007-08-16 Reitetsukusu:Kk 基盤検査装置、及び、基盤検査方法
JP5085953B2 (ja) * 2006-02-24 2012-11-28 株式会社日立ハイテクノロジーズ 表面検査装置
JP2007303853A (ja) * 2006-05-09 2007-11-22 Nikon Corp 端部検査装置
JP5245212B2 (ja) * 2006-05-09 2013-07-24 株式会社ニコン 端部検査装置
KR101444474B1 (ko) * 2006-05-09 2014-09-24 가부시키가이샤 니콘 검사 장치
US7616804B2 (en) * 2006-07-11 2009-11-10 Rudolph Technologies, Inc. Wafer edge inspection and metrology
JP2008032621A (ja) * 2006-07-31 2008-02-14 Hitachi High-Technologies Corp 表面検査装置およびその方法
WO2008103994A2 (en) 2007-02-23 2008-08-28 Rudolph Technologies, Inc. Wafer fabrication monitoring systems and methods, including edge bead removal processing
US8435593B2 (en) 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
JP5067049B2 (ja) * 2007-07-12 2012-11-07 株式会社ニコン 端部検査装置、及び被検査体の端部検査方法
DE102007042271B3 (de) * 2007-09-06 2009-02-05 Vistec Semiconductor Systems Gmbh Verfahren zur Bestimmung der Lage der Entlackungskante eines scheibenförmigen Objekts
KR20090055775A (ko) * 2007-11-29 2009-06-03 주식회사 동부하이텍 반도체 소자의 제조방법
JP5308934B2 (ja) * 2009-06-29 2013-10-09 オリンパス株式会社 基板検査方法および基板検査装置
US20110317003A1 (en) * 2010-06-02 2011-12-29 Porat Roy Method and system for edge inspection using a tilted illumination
JP5751994B2 (ja) * 2011-09-02 2015-07-22 ルネサスエレクトロニクス株式会社 マスクブランクの欠陥検査方法
US9809898B2 (en) * 2013-06-26 2017-11-07 Lam Research Corporation Electroplating and post-electrofill systems with integrated process edge imaging and metrology systems
US9822460B2 (en) 2014-01-21 2017-11-21 Lam Research Corporation Methods and apparatuses for electroplating and seed layer detection
US9734568B2 (en) * 2014-02-25 2017-08-15 Kla-Tencor Corporation Automated inline inspection and metrology using shadow-gram images
US9735035B1 (en) 2016-01-29 2017-08-15 Lam Research Corporation Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing
EP3220101B1 (en) * 2016-03-16 2020-01-29 Ricoh Company, Ltd. Texture evaluation apparatus, texture evaluation method, and computer-readable recording medium
US11112356B2 (en) * 2019-07-26 2021-09-07 Photon Control Inc. Optical reflective edge or contrast sensor
JP6788089B2 (ja) * 2019-10-23 2020-11-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
CN117497435A (zh) * 2022-07-21 2024-02-02 长鑫存储技术有限公司 半导体结构的处理方法、处理装置及处理系统

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US4376583A (en) * 1981-05-12 1983-03-15 Aeronca Electronics, Inc. Surface inspection scanning system
US5293538A (en) * 1990-05-25 1994-03-08 Hitachi, Ltd. Method and apparatus for the inspection of defects
US5917588A (en) * 1996-11-04 1999-06-29 Kla-Tencor Corporation Automated specimen inspection system for and method of distinguishing features or anomalies under either bright field or dark field illumination
US6061476A (en) * 1997-11-24 2000-05-09 Cognex Corporation Method and apparatus using image subtraction and dynamic thresholding
US6185511B1 (en) * 1997-11-28 2001-02-06 Advanced Micro Devices, Inc. Method to accurately determine classification codes for defects during semiconductor manufacturing
US7579308B2 (en) * 1998-07-06 2009-08-25 Ekc/Dupont Electronics Technologies Compositions and processes for photoresist stripping and residue removal in wafer level packaging
DE10027135A1 (de) * 2000-05-31 2001-12-06 Tokyo Seimitsu Co Ltd Prüfung von Randabschnitten zweidimensionaler Strukturen
KR100403862B1 (ko) * 2001-01-26 2003-11-01 어플라이드비전텍(주) 반도체 웨이퍼 검사 장치 및 그 방법
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces
DE10131665B4 (de) * 2001-06-29 2005-09-22 Infineon Technologies Ag Verfahren und Vorrichtung zur Inspektion des Randbereichs eines Halbleiterwafers
US20040032581A1 (en) * 2002-01-15 2004-02-19 Mehrdad Nikoonahad Systems and methods for inspection of specimen surfaces
CN1656601A (zh) * 2002-03-12 2005-08-17 奥林巴斯株式会社 半导体制造方法及其装置
TW540126B (en) * 2002-03-14 2003-07-01 United Microelectronics Corp Method of monitoring edge bevel rinse and wafer edge exposure
DE10232781B4 (de) * 2002-07-18 2013-03-28 Vistec Semiconductor Systems Gmbh Vorrichtung zur Wafer-Inspektion
DE10324474B4 (de) * 2003-05-30 2006-05-04 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Wafer-Inspektion

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI576576B (zh) * 2012-03-09 2017-04-01 克萊譚克公司 用於使用多點照射及多通道之晶圓檢測的系統
CN110838454A (zh) * 2018-08-16 2020-02-25 江德明 晶圆表面检测前处理装置及应用其的晶圆表面检测设备
CN111564382A (zh) * 2020-04-08 2020-08-21 中国科学院微电子研究所 晶圆检测装置及检测方法

Also Published As

Publication number Publication date
JP2006005360A (ja) 2006-01-05
DE102004029012B4 (de) 2006-11-09
DE102004029012A1 (de) 2006-01-12
US20050280807A1 (en) 2005-12-22
EP1607738A1 (de) 2005-12-21

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