200535967 九、發明說明： 【發明所屬之技術領域】 本發明係有關於用於檢查半導體元件之裝置’其具有一 基板托架（substrate holder)，於其上固定一待檢查之晶圓或 一微晶片之半導體元件或一微機元件。 本發明進一步有關於一種用於檢查半導體元件之方 法，其中有提供一基板托架，於其上固定一待檢查之半導體 元件。該半導體元件係藉由一觀察裝置觀察，尤其係藉由具 | 有至少一物鏡之顯微鏡來觀察。 【先前技術】 光學裝置尤其適合用於檢查晶圓表面。如由歐洲專利第 4 5 5 8 5 7號得知，藉由從晶圓之表面所反射出的計量光線， 則該晶圓的檢查將可被實現。 此外就目前所熟知的光學裝置，係藉由影像識別來偵測 晶圓或半導體基板表面上的多樣的變化特性。在本內文敘述 中，該晶圓通常是以明亮視野方式作爲照明處理或是以攝影 φ 機掃描方式，例如使用一矩陣攝影機或線性攝影機。 此外由美國專利第6，5 8 7，1 9 3號進一步可得知一種晶圓 的表面檢查，該晶圓表面檢查係選取一照度並以一種線性的 形式來掃描該晶圓。該照射線是投射在該晶圓之表面上，因 而可產生一二維影像。 在美國專利第2003/0202178 A1號中進一步揭露出一種 檢查晶圓之方法及其裝置。此處說明一光線投射於該晶圓 上，因此照在至該晶圓之一邊緣處。藉由一影像處理單元， 200535967 該晶圓的邊緣因而可被感測及處理。並將被探測邊緣影像與 一儲存比較影像比較即可探測出該晶圓的缺陷。 該些用於檢查晶圓之系統是專爲入射光檢查而設計。主 要原因是在於矽晶圓在可見波長、紫外線及深紫外線波長之 區域內是呈不透明狀。矽只有在1 000 nm以上的波長情況下 才會變得透明。在該些波長區域範圍內，有可能使其能夠檢 測該晶圓表面以下之特性或是經由背面檢測到晶圓的前面 之特性。 | 然而，以晶圓之透射光檢查來說，已知的透射光顯微鏡 檢查之光線照明槪念使該顯微鏡下必須要有一透射光照明 光學系統而且在這槪念下也需要有一透射光顯微鏡載物 台，但並未施行於目前的檢查系統。習知檢查系統擴充需要 全新設計才能包含透射光檢查特性。尤其，該些系統需要裝 設有一適合於透射光之晶圓顯微鏡載物台，相較於至今所用 之入射光晶圓顯微鏡載物台，其具有一無障礙通孔，用於整 個晶圓直徑範圍內之透射光照明。將一透射光照射系統整合 φ 至該晶圓檢查裝置也是値得考慮的設計方案。 【發明內容】 因此，本發明之目的係要發展已知的晶圓/半導體檢查 裝置，以便可使用在透射光的應用。 依據本發明之主要的目的爲藉由申請專利範圍第1項所 述之裝置及其方法而實現，依據本發明，因此提供一特殊基 板托架，用於照射該晶圓之一照射裝置係被整合於其內部。 該半導體元件可以包含如一晶圓、一微晶片、或是一微機元 200535967 件。因此’不言而喻的是，複數個微晶片或微機元件組會成 於一晶圓上。「晶圓」一詞係作爲簡稱，但不作爲自限名稱。 爲要以透射光檢查該半導體元件或晶圓，因此設置有該照射 裝置’以致其將一波長之光發射於該紅外線波長區域內。該 晶圓呈透明狀而於該紅外線波長區域內變亮。若幾何要點考 慮進去的話，則該基板托架可以被設置於以設置的晶圓載物 台’以作爲一附加裝置。該照射裝置發射一照射光束以照射 該晶圓。該晶圓因此由下方受到照射，即由該物鏡遠處之該 Φ 端面照射。這樣即可檢查透射光，因而省去整體設備設計的 複雜修正作業。原則上，藉由本發明之裝置及方法也可以以 透射光檢查晶圓深層以及晶圓表面下的特性。在做晶片封裝 時’這對品管有相當助益，因爲該晶片之功能表面遠離該罩 面。 於一較佳實施例中，有設置一擴散裝置以利於該照射放 射線環境下達到高強度以及一致性；例如，使用一擴散面 板；尤其該基板托架該些測邊之一擴散塗料·，或是使用一擴 Φ散聚集光學系統。該些擴散裝置可以逐一使用或與另一裝置 一起使用。 於另一實施例中，該照射裝置可以包含至少一被整合至 該基板托架之導光體。具一適當波長之光因而可透過該導光 體被導引至該基板托架。同樣可將紅外線發光二極體，尤其 呈一發光二極體矩陣狀，提供於該基板托架。該些發光二極 體可以直接被設置於該基板托架側壁內側或是被整合於後 者0 200535967 其係被設置於該基板托架上以照射該晶圓或半導體元 件一照射光束係由該照射裝置產生，隨後再照射該晶圓。該 晶圓被分散照射，即在接觸該晶圓之前，該照射光束被傳送 至一擴散裝置，諸如一承載該晶圓之玻璃載板、一擴散板、 一擴散塗料、或一擴散聚集光學系統，因此獲得助益 如果適當選取該照射裝置，其即能順著該基板托架內部 傳送，而能達到大區域的分散配置。尤其，此處可以使用一 白熱光或一局部界定之發光二極體陣列，其係被設置於一定 位單兀，其中該單兀與該掃描載物台（scanning stage)同時移 除。 藉由該整合之照射系統，因此建構以一透射光照射該晶 圓之一晶圓檢查裝置。因此並不需要重新設計該掃描載物 台、該基本結構、或該顯微鏡單元。相反的，目前市場上之 單元可以藉由該透射光裝置來改進。 以下各圖示爲本發明之優點及有利的實施例並針對該 些圖示做出說明。 【實施方式】 第1圖係說明依據本發明之晶圓檢查裝置1 0的特性配 置。一掃描載物台14構成該顯微鏡載物台，該掃描載物台 1 4被整合於一基本結構1 2上。待檢查之晶圓1 8係被設置於 掃描載物台14上或掃描載物台14內，其係直接或於該掃描 載物台上之一基板托架1 6上來實施檢查。較佳的檢查裝置 爲一顯微鏡2 0，其係經由一承載單元22連接至一基本結構 1 2，而且可作爲晶圓1 8的放大檢查。顯微鏡20包含：至少 200535-967 一物鏡24，其代表一種影像光學系統，且可以使用不同放大 倍率來實施檢查。因此可直接經由一目鏡26或一適用之CCD 攝影機28來檢視放大的特徵。該攝影機28之該些信號依其 目的傳送至一螢幕30。另外還設置有一電子裝置32，藉由 該電子裝置32可以實現系統自動化。電子單元32尤其係用 來控制掃描載物台1 4或是讀取攝影機28。 通常配置基板托架1 6是可以使其容納待檢查之晶圓或 半導體元件1 8，以致在檢查期間能被固定。依據本發明，其 p 包含一可透射光照射晶圓1 8之照射裝置。 如第2圖所示，掃描載物台14包含兩個軸36及34，兩 者可在X、Y軸上互換。晶圓18上的每一點35可移至該顯 微鏡物鏡24之光學軸下方來作檢查（第1圖）。晶圓18被固 定於基板托架16上，而且被整合於基板托架16內之照射裝 置來照射。 第3圖係說明在第一實施例中的基板托架1 6。一照射裝 置38被整合於該基板托架16內，其中該照射裝置38包含 鲁至少一導光體39。基板托架16係靠近該底部，即與晶圓18 相對，而且於該頂部開啓，即朝晶圓1 8方向開啓。於檢查 時，該晶圓1 8得被設置於一玻璃板4 6上。再者，就依據晶 圓1 8之平坦度以及照射光之一致性之條件需求下，即便沒 有提供玻璃板，該晶圓亦可直接設置於基板托架1 6上。至 此，基於此因素，晶圓1 8之該些側緣均被設置於基板托架 16兩端面上之支撐邊緣44。透過一真空裝置18可施加至晶 圓1 8之小孔得被提供於玻璃板46，如此能使晶圓1 8固定。 200535967 就照射而言，光係透過至少一導光體3 9引導至該基板 托架1 6內部。延著該基板托架1 6週邊之該些側壁則被選爲 數個較佳入口處。導光體3 9均以一傾斜角度由頂部定向至 底部，但，亦可由底部至頂部進入基板托架或是水平進入。 該紅外線具有波長的一照射放射線48其源自於該導光體39 之紅外線。照射放射線48係以分散式反射至基板托架1 6之 該些內壁，因此透過晶圓1 8由底部放射至頂部，如果條件 允許的話，則光線會透過玻璃板46放射。爲要加強光強度 以及一致性，基板托架1 6之該些內壁得提供有一高度分散 反射的反射層，使其構成一擴散裝置。該導光體39之出口 表面處的一聚集光學系統3 7可設置作爲照射裝置3 8之一部 份。有了該系統，該些發射特性得以最理想之方式來適用於 該基板托架1 6之幾何內部配置。此外，聚集光學系統37本 身得已具有散射特性，這些特性尤其得藉由一粗糙表面來實 現。而爲使照射放射線48有較佳的一致性，玻璃板46亦得 具有散射特性。 於第4圖中，進一步地說明該晶圓載物台之實施例。在 該圖中，發光二極體40係成爲一種照射裝置。該照射光較 佳地完全產生於該基板托架16內部，發光二極體40以平面 排列的方式設置於該支撐托架1 6之基底層上。以一平面發 光二極體陣列所形成之發光二極體的一實施例尤其可適用 於此處。爲要改善晶圓1 8平面之照射均等性，一擴散板5 〇 得可設置於發光二極體40與晶圓1 8之間。至此，玻璃板46 亦恢復其擴散特性。 -10- 200535967 因爲發光二極體40在運作上會產生非預期的熱度，所 以藉由一控制裝置輔助，如電子單元3 2，會使較好的功能能 夠進一步實現，。至此，該控制裝置控制發光二極體4 0，只 有目前設置於檢查點3 5 (第2圖）下方之該些特殊二極體將 光發射出去。結果是即使照射均勻且適當，熱還是大幅地被 降低。所以，只有一部分的發光二極體被用來照射晶圓1 8。 針對照射放射線48的一致性所列舉之動作均可作爲實 例。一般而言，產生一均勻背景照射之所有已知方法均可以 _ 使用，尤其是應用於LCD平面螢幕之該些方法。玻璃板46 並不一定都由玻璃製成。相反的，在各個實施例中，任一可 見該些照射線4 8之透明材料均可以使用。 於第5圖中’進一步說明基板托架1 6之實施例。在該 實施例中所使用照射裝置的光源爲一種局部界定之光源，例 如：一種習知的白熱燈42或者是爲一種局部界定之發光二 極體陣列。白熱燈42被固定於待檢查之分點3 5下方，以便 使後者完全受到照射。因此，該白熱燈係經由基板托架1 6 鲁內之一 X-Y定位單元52被引導至檢查點35，較佳係與該掃 描載物台同步。尤其，一包含該實際光源之單元與一具有照 射一致性之選擇性擴散特性的聚集光學系統可以被用來作 爲該照射來源。該照射裝置因此與一聚集光學系統得具體包 含一局部界定的發光二極體陣列。 於一基板托架1 6之進一步較佳實施例中，相對於顯微 鏡20之該局部界定照射來源（白熱燈）42亦由一種固定方式 來設置。其說明於第6圖中。此處所設置的基板托架1 6不 -11- 200535-967 是作爲一完全封閉的圓柱體，而是作爲一剖面內呈U形之元 件。同樣於目前所述之所有實施例中，基板托架1 6得於定 位期間與掃描載物台14(第1圖）一起移動。光源（白熱燈）42 係設置於承載臂54上，其係被固定於該U形基板托架16 之該些支架之間，即該上、下端面。這樣確保承載臂54以 及產生之光源（白熱燈）42得依據需求定位而不會造成碰 撞。本實施例之一優點是排除一 X-Y定位單元，其可以除去 一大面積之發光二極體陣列所產生大量熱以及高能源消耗。 B 或者，照射裝置3 8得作爲一導光體纜線，其導引路線 是沿著承載臂5 4而且具有一固定於該出口端之偏斜及均等 化光學系統，而且可以將基板托架1 6外部之光分散。 【圖式簡單說明】 第1圖係爲一晶圓檢查裝置之整體示意圖； 第2圖係爲一具有晶圓之掃描載物台之示意圖； 第3圖爲係一具有該些導光體之基板托架的實施例示意 圖； φ 第4圖爲係一具有發光二極體之基板托架的實施例示意 圖； 第5圖爲係一具有活動式局部界定照射裝置之基板托架 的實施例示意圖； 第6圖爲係一具有固定式局部界定照射裝置之基板托架 的實施例示意圖。 【元件符號說明】 10 晶圓檢查裝置 -12- 200535967200535967 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a device for inspecting a semiconductor element, which has a substrate holder on which a wafer or a microchip to be inspected is fixed. A semiconductor component of a wafer or a microcomputer component. The present invention further relates to a method for inspecting a semiconductor element, in which a substrate holder is provided, on which a semiconductor element to be inspected is fixed. The semiconductor element is observed by an observation device, and particularly by a microscope having at least one objective lens. [Prior Art] Optical devices are particularly suitable for inspecting the surface of a wafer. As is known from European Patent No. 4 5 5 8 5 7, by measuring the light reflected from the surface of the wafer, the inspection of the wafer can be achieved. In addition, the currently known optical devices use image recognition to detect various changing characteristics on the surface of a wafer or semiconductor substrate. In this context, the wafer is usually illuminated with a bright field of view or scanned with a camera φ, such as a matrix camera or a linear camera. In addition, U.S. Patent No. 6,5,87,193 is further known for surface inspection of a wafer. The wafer surface inspection selects an illuminance and scans the wafer in a linear form. The irradiation line is projected on the surface of the wafer, so a two-dimensional image can be generated. A method and an apparatus for inspecting a wafer are further disclosed in U.S. Patent No. 2003/0202178 A1. It is explained here that a ray is projected on the wafer, so that it strikes an edge of the wafer. With an image processing unit, 200535967 the edge of the wafer can thus be sensed and processed. Defects of the wafer can be detected by comparing the detected edge image with a stored comparison image. These systems for inspecting wafers are designed for incident light inspection. The main reason is that silicon wafers are opaque in the visible, ultraviolet, and deep ultraviolet wavelength regions. Silicon becomes transparent only at wavelengths above 1 000 nm. Within these wavelength ranges, it is possible to detect the characteristics below the surface of the wafer or the characteristics of the front side of the wafer through the back side. However, for transmitted light inspection of wafers, the known light illumination concept of transmitted light microscopy requires a transmitted light illumination optical system under the microscope and a transmitted light microscope carrier under this concept Objects, but not implemented in current inspection systems. The conventional inspection system expansion requires a completely new design to include transmitted light inspection features. In particular, these systems need to be equipped with a wafer microscope stage suitable for transmitted light. Compared to incident light wafer microscope stages used so far, it has an unobstructed through-hole for the entire wafer diameter Transmitted light illumination within range. Integrating a transmitted light irradiation system φ into the wafer inspection device is also a design option to consider. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to develop a known wafer / semiconductor inspection device so that it can be used in transmitted light applications. The main object according to the present invention is achieved by the device and method described in the first patent application scope. According to the present invention, a special substrate holder is provided for irradiating one of the wafers. Integrated into it. The semiconductor device may include, for example, a wafer, a microchip, or a microcomputer 200535967. So it goes without saying that a plurality of microchips or microcomputer component groups will be formed on one wafer. The term "wafer" is used as an abbreviation, but not as a self-limiting name. In order to inspect the semiconductor element or wafer with transmitted light, the irradiation device 'is provided so that it emits light of a wavelength in the infrared wavelength region. The wafer is transparent and brightens in the infrared wavelength region. If the geometric points are taken into consideration, the substrate holder can be set on a wafer stage 'provided as an additional device. The irradiation device emits an irradiation beam to illuminate the wafer. The wafer is therefore irradiated from below, that is, by the Φ end face far from the objective lens. This allows the transmitted light to be checked, eliminating the need for complex corrections to the overall equipment design. In principle, with the device and method of the present invention, the characteristics of the deep layer of the wafer and the surface under the wafer can also be inspected with transmitted light. This is quite helpful for quality control when making a chip package, because the functional surface of the chip is far from the cover. In a preferred embodiment, a diffusing device is provided to facilitate achieving high intensity and consistency under the irradiated radiation environment; for example, using a diffusing panel; in particular, diffusing paint on one of the edges of the substrate holder; It is a diffused-focusing optical system. These diffusion devices can be used one by one or with another device. In another embodiment, the irradiation device may include at least one light guide body integrated into the substrate holder. Light having an appropriate wavelength can thus be guided through the light guide to the substrate holder. Similarly, infrared light emitting diodes, especially a light emitting diode matrix, can be provided on the substrate holder. The light-emitting diodes can be directly disposed on the inside of the side wall of the substrate holder or integrated into the latter. A device is produced and the wafer is then irradiated. The wafer is scattered and irradiated, that is, before the wafer is contacted, the irradiation beam is transmitted to a diffusion device, such as a glass carrier, a diffusion plate, a diffusion coating, or a diffusion focusing optical system that carries the wafer. Therefore, if the irradiation device is appropriately selected, it can be conveyed along the inside of the substrate tray, and a large area of distributed configuration can be achieved. In particular, an incandescent light or a locally defined light-emitting diode array can be used here, which is arranged in a certain unit, where the unit is removed at the same time as the scanning stage. With the integrated irradiation system, a wafer inspection device illuminating one of the wafers with a transmitted light is constructed. Therefore, there is no need to redesign the scanning stage, the basic structure, or the microscope unit. Conversely, units currently on the market can be improved with this transmitted light device. The following illustrations are advantages and advantageous embodiments of the invention and are described with respect to these drawings. [Embodiment] FIG. 1 is a diagram illustrating a characteristic configuration of a wafer inspection apparatus 10 according to the present invention. A scanning stage 14 constitutes the microscope stage, and the scanning stage 14 is integrated on a basic structure 12. The wafer 18 to be inspected is set on or in the scanning stage 14, and the inspection is performed directly or on a substrate holder 16 on the scanning stage. The preferred inspection device is a microscope 20, which is connected to a basic structure 12 via a carrier unit 22, and can be used as a magnified inspection of the wafer 18. The microscope 20 includes: at least 200535-967 an objective lens 24, which represents an imaging optical system, and can be inspected using different magnifications. The magnified features can therefore be viewed directly via an eyepiece 26 or a suitable CCD camera 28. The signals of the camera 28 are transmitted to a screen 30 according to their purpose. An electronic device 32 is also provided, and the electronic device 32 can realize system automation. The electronic unit 32 is used to control the scanning stage 14 or the reading camera 28 in particular. The substrate holder 16 is usually configured to accommodate a wafer or a semiconductor element 18 to be inspected so that it can be fixed during the inspection. According to the present invention, p includes an irradiating device for transmitting light to irradiate the wafer 18. As shown in Fig. 2, the scanning stage 14 includes two axes 36 and 34, and the two are interchangeable on the X and Y axes. Each point 35 on the wafer 18 can be moved under the optical axis of the microscope objective lens 24 for inspection (Fig. 1). The wafer 18 is fixed on the substrate holder 16 and irradiated by an irradiation device integrated in the substrate holder 16. FIG. 3 illustrates the substrate holder 16 in the first embodiment. An irradiation device 38 is integrated in the substrate holder 16. The irradiation device 38 includes at least one light guide 39. The substrate carrier 16 is close to the bottom, that is, opposite to the wafer 18, and is opened at the top, that is, it is opened in the direction of the wafer 18. During the inspection, the wafer 18 must be set on a glass plate 46. Furthermore, according to the requirements of the flatness of the crystal circle 18 and the consistency of the irradiated light, the wafer can be directly placed on the substrate holder 16 even if a glass plate is not provided. So far, based on this factor, the side edges of the wafer 18 are provided on the support edges 44 on both end faces of the substrate holder 16. The small holes that can be applied to the wafer 18 through a vacuum device 18 must be provided to the glass plate 46, so that the wafer 18 can be fixed. 200535967 In terms of illumination, the light system is guided through the at least one light guide body 39 to the inside of the substrate holder 16. The side walls extending around the periphery of the substrate holder 16 are selected as a number of preferred entrances. The light guides 39 are all oriented from the top to the bottom at an inclined angle, but they can also enter the substrate holder from the bottom to the top or enter horizontally. The infrared radiation has a wavelength of an irradiation radiation 48 which is derived from the infrared radiation of the light guide 39. The irradiation radiation 48 is reflected to the inner walls of the substrate holder 16 in a distributed manner, and thus is radiated from the bottom to the top through the wafer 18. If conditions permit, the light is radiated through the glass plate 46. In order to enhance the light intensity and consistency, the inner walls of the substrate holder 16 must be provided with a highly diffuse reflective reflection layer to form a diffusion device. A focusing optical system 37 at the exit surface of the light guide 39 may be provided as part of the irradiation device 38. With this system, these emission characteristics can be optimally adapted to the geometric internal configuration of the substrate holder 16. In addition, the focusing optical system 37 itself already has scattering characteristics, and these characteristics are especially realized by a rough surface. In order to achieve better uniformity of the irradiated radiation 48, the glass plate 46 must also have scattering characteristics. An embodiment of the wafer stage is further described in FIG. 4. In this figure, the light emitting diode 40 is a type of irradiation device. The irradiated light is preferably completely generated inside the substrate holder 16, and the light-emitting diodes 40 are arranged on the base layer of the support holder 16 in a planar arrangement. An embodiment of a light emitting diode formed by a planar light emitting diode array is particularly applicable here. In order to improve the illumination uniformity of the 18 plane of the wafer, a diffusion plate 50 may be disposed between the light emitting diode 40 and the wafer 18. At this point, the glass plate 46 also resumes its diffusion characteristics. -10- 200535967 Because the light emitting diode 40 generates unexpected heat during operation, it is assisted by a control device, such as the electronic unit 32, which will enable better functions to be further realized. So far, the control device controls the light emitting diode 40, and only the special diodes currently set under the checkpoint 3 5 (Figure 2) emit light. As a result, even if the irradiation is uniform and appropriate, the heat is greatly reduced. Therefore, only a part of the light emitting diode is used to irradiate the wafer 18. The operations listed for the consistency of the irradiation radiation 48 are all examples. In general, all known methods to produce a uniform background illumination can be used, especially those methods applied to LCD flat screens. The glass plate 46 is not necessarily made of glass. On the contrary, in each embodiment, any transparent material that can see the irradiation lines 48 can be used. An embodiment of the substrate holder 16 is further described in Fig. 5 '. The light source of the irradiation device used in this embodiment is a locally defined light source, such as a conventional incandescent lamp 42 or a locally defined light-emitting diode array. The incandescent lamp 42 is fixed below the sub-point 35 to be inspected so that the latter is completely irradiated. Therefore, the incandescent lamp is guided to the inspection point 35 via one of the X-Y positioning units 52 in the substrate holder 16 and is preferably synchronized with the scanning stage. In particular, a unit containing the actual light source and a focusing optical system having selective diffusion characteristics with irradiation uniformity can be used as the irradiation source. The illuminating device and a focusing optical system thus include a locally defined light emitting diode array. In a further preferred embodiment of a substrate holder 16, the locally defined illumination source (incandescent lamp) 42 with respect to the microscope 20 is also set in a fixed manner. This is illustrated in Figure 6. The substrate holder 16 provided here is not a -11-200535-967 as a completely closed cylinder, but a U-shaped element in a cross section. Also in all the embodiments described so far, the substrate holder 16 is moved with the scanning stage 14 (FIG. 1) during the positioning period. The light source (incandescent lamp) 42 is disposed on the supporting arm 54 and is fixed between the brackets of the U-shaped substrate bracket 16, that is, the upper and lower end surfaces. This ensures that the bearing arm 54 and the generated light source (incandescent lamp) 42 can be positioned according to requirements without causing collision. One advantage of this embodiment is that it eliminates an X-Y positioning unit, which can remove a large amount of heat and high energy consumption generated by a large area light emitting diode array. B Alternatively, the irradiating device 38 can be used as a light guide cable, and its guiding route is along the carrying arm 54 and it has a tilting and equalizing optical system fixed at the exit end, and the substrate holder can be 1 6 Dispersion of external light. [Schematic description] Figure 1 is a schematic diagram of a wafer inspection device; Figure 2 is a schematic diagram of a scanning stage with a wafer; Figure 3 is a diagram of the light guide body Schematic illustration of an embodiment of a substrate holder; φ FIG. 4 is a schematic illustration of an embodiment of a substrate holder with a light-emitting diode; FIG. 5 is a schematic illustration of an embodiment of a substrate holder with a movable partially defined irradiation device FIG. 6 is a schematic diagram of an embodiment of a substrate holder having a fixed partially defined irradiation device. [Description of component symbols] 10 Wafer inspection equipment -12- 200535967
12 基本 14 掃描 16 基板 18 晶圓 20 顯微 22 承載 24 物鏡 26 目鏡 28 CCD 30 螢幕 32 電子 34 軸 35 點 36 軸 37 聚集 38 照射 39 導光 40 發光 42 白熱 44 支撐 46 玻璃 48 照射 50 擴散 52 X-Y 結構 載物台 托架 鏡 單元 攝影機 裝置 光學系統 裝置 體 二極體 燈 邊緣 板 放射線 板 定位單元 200535967 Λ > 54 承載臂12 Basic 14 Scanning 16 Substrate 18 Wafer 20 Microscope 22 Bearing 24 Objective 26 Eyepiece 28 CCD 30 Screen 32 Electron 34 Axis 35 Point 36 Axis 37 Gathering 38 Irradiation 39 Light Guide 40 Luminescence 42 White Hot 44 Support 46 Glass 48 Irradiation 50 Diffusion 52 XY structure stage bracket mirror unit camera device optical system device body diode lamp edge plate radiation plate positioning unit 200535967 Λ > 54 load arm
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