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TW200515481A - Photo mask, pattern formation method using the same, and mask data generation method - Google Patents

Photo mask, pattern formation method using the same, and mask data generation method

Info

Publication number
TW200515481A
TW200515481A TW093128885A TW93128885A TW200515481A TW 200515481 A TW200515481 A TW 200515481A TW 093128885 A TW093128885 A TW 093128885A TW 93128885 A TW93128885 A TW 93128885A TW 200515481 A TW200515481 A TW 200515481A
Authority
TW
Taiwan
Prior art keywords
pattern
mask
partial
phase shifter
patterns
Prior art date
Application number
TW093128885A
Other languages
English (en)
Inventor
Akio Misaka
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200515481A publication Critical patent/TW200515481A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093128885A 2003-10-23 2004-09-23 Photo mask, pattern formation method using the same, and mask data generation method TW200515481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003362717 2003-10-23

Publications (1)

Publication Number Publication Date
TW200515481A true TW200515481A (en) 2005-05-01

Family

ID=34509998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128885A TW200515481A (en) 2003-10-23 2004-09-23 Photo mask, pattern formation method using the same, and mask data generation method

Country Status (4)

Country Link
US (1) US7842436B2 (zh)
JP (2) JP4340265B2 (zh)
TW (1) TW200515481A (zh)
WO (1) WO2005040919A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8724075B2 (en) 2005-08-31 2014-05-13 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
TWI450044B (zh) * 2005-08-31 2014-08-21 尼康股份有限公司 An optical element, an exposure apparatus using the same, an exposure method, and a manufacturing method of the micro-element

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005316135A (ja) * 2004-04-28 2005-11-10 Toshiba Corp 設計パターン補正方法と設計パターン作成方法及びプロセス近接効果補正方法
JP2006126614A (ja) * 2004-10-29 2006-05-18 Toshiba Corp マスクパターンデータ生成方法、フォトマスクの製造方法、及び半導体デバイスの製造方法
KR100653990B1 (ko) * 2004-12-29 2006-12-05 주식회사 하이닉스반도체 포토마스크 데이터베이스 패턴의 불량 검사 방법
KR100924707B1 (ko) 2005-08-11 2009-11-03 후지쯔 마이크로일렉트로닉스 가부시키가이샤 노광용 마스크 및 패턴 전사 방법
US7735056B2 (en) * 2006-03-30 2010-06-08 Texas Instruments Incorporated Automated circuit design dimension change responsive to low contrast condition determination in photomask phase pattern
JP4840517B2 (ja) * 2010-02-22 2011-12-21 ソニー株式会社 露光方法、並びに、半導体装置及びその製造方法
JP2012068296A (ja) * 2010-09-21 2012-04-05 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
DE112014003849T5 (de) * 2013-08-21 2016-05-12 Dai Nippon Printing Co., Ltd. Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben
KR20150028109A (ko) * 2013-09-05 2015-03-13 삼성디스플레이 주식회사 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법
JP6370755B2 (ja) 2015-09-11 2018-08-08 東芝メモリ株式会社 マスク及びパターン形成方法
US11372324B2 (en) * 2019-02-11 2022-06-28 United Microelectronics Corporation Method for correcting mask pattern and mask pattern thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0401795A3 (en) 1989-06-08 1991-03-27 Oki Electric Industry Company, Limited Phase-shifting photomask for negative resist and process for forming isolated, negative resist pattern using the phaseshifting photomask
JPH03170928A (ja) * 1989-11-30 1991-07-24 Fujitsu Ltd 投影露光装置用光学マスク
JP2652341B2 (ja) * 1994-07-04 1997-09-10 エルジイ・セミコン・カンパニイ・リミテッド 位相反転マスクの製造方法
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
JP3501688B2 (ja) * 1999-07-01 2004-03-02 キヤノン株式会社 露光方法、露光装置、およびデバイス製造方法
EP1542073A3 (en) * 1999-11-08 2009-02-18 Panasonic Corporation Patterning method
JP2001174974A (ja) 1999-12-20 2001-06-29 Matsushita Electric Ind Co Ltd 光学的近接効果補正方法及び光強度シミュレーション方法
DE10119145C1 (de) * 2001-04-19 2002-11-21 Infineon Technologies Ag Verfahren zum Feststellen und Beheben von Phasenkonflikten auf alternierenden Phasenmasken und Maskendesign zur Verwendung bei einem solchen Verfahren
JP3708877B2 (ja) * 2001-05-01 2005-10-19 松下電器産業株式会社 フォトマスク
KR100568406B1 (ko) * 2001-12-26 2006-04-05 마츠시타 덴끼 산교 가부시키가이샤 패턴형성방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8724075B2 (en) 2005-08-31 2014-05-13 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
TWI450044B (zh) * 2005-08-31 2014-08-21 尼康股份有限公司 An optical element, an exposure apparatus using the same, an exposure method, and a manufacturing method of the micro-element

Also Published As

Publication number Publication date
WO2005040919A1 (ja) 2005-05-06
JPWO2005040919A1 (ja) 2007-04-19
JP2009104195A (ja) 2009-05-14
US7842436B2 (en) 2010-11-30
JP4754636B2 (ja) 2011-08-24
US20070065730A1 (en) 2007-03-22
JP4340265B2 (ja) 2009-10-07

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