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TW200507105A - Method of forming adjacent holes on a semiconductor substrate - Google Patents

Method of forming adjacent holes on a semiconductor substrate

Info

Publication number
TW200507105A
TW200507105A TW092122252A TW92122252A TW200507105A TW 200507105 A TW200507105 A TW 200507105A TW 092122252 A TW092122252 A TW 092122252A TW 92122252 A TW92122252 A TW 92122252A TW 200507105 A TW200507105 A TW 200507105A
Authority
TW
Taiwan
Prior art keywords
forming
layer
adjacent holes
semiconductor substrate
horizontal surface
Prior art date
Application number
TW092122252A
Other languages
Chinese (zh)
Other versions
TWI240329B (en
Inventor
Tse-Yao Huang
Yi-Nan Chen
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW92122252A priority Critical patent/TWI240329B/en
Publication of TW200507105A publication Critical patent/TW200507105A/en
Application granted granted Critical
Publication of TWI240329B publication Critical patent/TWI240329B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A method of forming adjacent holes on a semiconductor substrate is disclosed. The adjacent holes are separated by a fine line structure. The method includes the steps of providing a semiconductor substrate with an insolating layer on the substrate, forming a step-shaped structure, with a first horizontal surface, a second horizontal surface, and a vertical surface, on the surface of the insolating layer, depositing a sacrificial layer with an average thickness, forming a patterned photoresist layer on portions of the first and second horizontal surface, performing an etchback process to remove the sacrificial layer not covered by the photoresist layer and forming a spacer on the vertical surface, removing the patterned photoresist layer, and using the spacer and the remaining sacrificial layer as a hard mask to remove the insulating layer, thereby forming two adjacent holes.
TW92122252A 2003-08-13 2003-08-13 Method of forming adjacent holes on a semiconductor substrate TWI240329B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92122252A TWI240329B (en) 2003-08-13 2003-08-13 Method of forming adjacent holes on a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92122252A TWI240329B (en) 2003-08-13 2003-08-13 Method of forming adjacent holes on a semiconductor substrate

Publications (2)

Publication Number Publication Date
TW200507105A true TW200507105A (en) 2005-02-16
TWI240329B TWI240329B (en) 2005-09-21

Family

ID=37007722

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92122252A TWI240329B (en) 2003-08-13 2003-08-13 Method of forming adjacent holes on a semiconductor substrate

Country Status (1)

Country Link
TW (1) TWI240329B (en)

Also Published As

Publication number Publication date
TWI240329B (en) 2005-09-21

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Legal Events

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