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TW200428152A - Positive photoresist composition for spinless (slit) coating - Google Patents

Positive photoresist composition for spinless (slit) coating Download PDF

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Publication number
TW200428152A
TW200428152A TW093115691A TW93115691A TW200428152A TW 200428152 A TW200428152 A TW 200428152A TW 093115691 A TW093115691 A TW 093115691A TW 93115691 A TW93115691 A TW 93115691A TW 200428152 A TW200428152 A TW 200428152A
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TW
Taiwan
Prior art keywords
group
methyl
photoresist composition
positive photoresist
allison
Prior art date
Application number
TW093115691A
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Chinese (zh)
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TWI274962B (en
Inventor
You-Lee Pae
Young-Keun Kim
Suk-Young Choi
Hyuk-Jin Cha
Jae-Hwan Lee
Keun-Joo Lee
Mi-Sun Ryu
Hyun-Jin Seo
Seung-Woo Woo
Je-Sun Woo
Kwon-Yil Yoo
Su-Hyun Lee
Yong-Man Jeong
Bum-Young Choi
Cheol Han
Woong Kim
Nak-Chil Jung
Seong-Jae Hong
Min-Ji Kim
Young-Soo Choi
Sang-Hyup Jung
Jae-Lok Choi
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Adms Technology Co Ltd
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Publication of TWI274962B publication Critical patent/TWI274962B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0048Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)

Abstract

A positive photoresist composition for spinless(slit) coating is disclosed. The positive photoresist composition includes 5~50 parts by weight of an acrylic or novolac binder resin, 0.1~50 parts by weight of a photoactive compound, 0.001~5 parts by weight of a silicon compound containing epoxy or amine group, and 0.001~5 parts by weight of a fluorine-based or silicon-based surfactant. A solvent is added to the composition so that viscosity becomes 2~20 cps. The positive photoresist composition may form a uniform coating layer without any coating defects when a layer such as an organic insulating layer is formed on a substrate with a spinless coaler, and is easy to control edge profile of the coating layer.

Description

200428152 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種用於狹縫塗佈之光阻組成物,尤其關於 一種用於狹縫塗佈之正光阻組成物,當以無旋轉式塗佈機於一基 板上形成一層時,其可形成無塗佈缺陷之均勻塗層,且易控制塗 層之邊緣輪廓。 . 【先前技術】 平面顯示器,例如液晶顯示器(LCDs)目前正斬大尺寸化.,因 此’用於LCDs之基板亦正朝大尺寸化發展。目前,已建立第五 代基板之生產線,且較大基板(如第六或第七代)正在發展中。隨著 基板增大之趨勢’恤之塗齡法因*改變。換言之,就第四代 玻璃基板而言’係使用裂縫及旋轉式塗佈法,其中紐組成物係 透過裂缝碱祕板上,且接辆触狀。細,就具尺寸為 超過麵€米>d_毫米之第五代或以後之玻璃基板而言,已因 其不能旋轉而使祕縫塗佈法,其中光隨成物係透過裂縫而施 於基板上,且接著不需旋轉而完成塗佈程序。如上述,由於已改 變塗佈方法,故纽變目前正使_光隨祕。尤其於將狹缝 k佈法應用於大尺寸基板之情形下,應無任何缺陷地均勻化及塗 佈由光阻組成物形成之塗層。再者,於狹縫塗健程綱,應可 容易地控制塗層之邊緣輪廓。 6 200428152 【發明内容】 曰本發娜試_決先前技藝之問題,因此,本發明之目的為 提供一種正光阻組成物,當於一基' 士 丞做上形成一層(例如有機絕緣層) 化’其可形成無均勻及塗佈缺陷的塗層,且易控制塗層之邊緣輪 廓。 明 為了達成上述目的,本發明提供一種正光阻組成物,其包含: 5〜50重量份之丙烯酸系或諾沃拉克黏著劑樹脂;〇 ι〜5〇重量份之 光活性化合物;0.001〜5重量份之含環氧或胺基團之矽酮化合物· 及0.001〜5重量份之氟基底或矽酮基底的表面活性劑,其中添加冰 劑以使得黏度為2〜20釐泊(cps)。 【實施方式】 本發明將詳細地說明如下。 本發明用於狹缝塗佈之正光阻組成物包含5〜50重量份之丙 烯酸系或諾沃拉克黏著劑樹脂。就丙烯酸系黏著劑樹脂而言,可 使用任一種用於正光阻組成物之習用的丙烯酸系黏著劑樹脂。較 佳為單獨或以混合物使用具以下通式1或2結構之樹脂。 通式1200428152 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a photoresist composition for slit coating, and more particularly to a positive photoresist composition for slit coating. When a coater forms a layer on a substrate, it can form a uniform coating without coating defects, and it is easy to control the edge contour of the coating. [Previous Technology] Flat displays, such as liquid crystal displays (LCDs), are currently undergoing large-scale development. Therefore, substrates for LCDs are also being developed. Currently, a production line for fifth-generation substrates has been established, and larger substrates (such as the sixth or seventh generation) are being developed. With the trend of increasing substrates, the ageing method of shirts has changed due to *. In other words, for the fourth-generation glass substrate, the cracking and spin coating method is used, in which the button composition penetrates the cracked alkali board and contacts the car. Thin, for the fifth generation or later glass substrates with dimensions exceeding € m> d_mm, the crack coating method has been used because it cannot be rotated, where light is applied as the composition passes through the crack On the substrate, and then complete the coating process without rotation. As mentioned above, since the coating method has been changed, the button change is currently using light. Especially in the case where the slit k cloth method is applied to a large-sized substrate, a coating formed of a photoresist composition should be uniformized and applied without any defects. Furthermore, applying the program to the slit should allow easy control of the edge profile of the coating. 6 200428152 [Summary of the Invention] The Ben Fanna test_ solves the problems of the prior art, therefore, the object of the present invention is to provide a positive photoresist composition, which forms a layer (such as an organic insulating layer) on a substrate. 'It can form a coating without uniformity and coating defects, and easily control the edge contour of the coating. In order to achieve the above object, the present invention provides a positive photoresist composition, which comprises: 5 to 50 parts by weight of an acrylic or Novolak adhesive resin; 0 to 50 parts by weight of a photoactive compound; 0.001 to 5 parts by weight Parts of a silicone compound containing an epoxy or amine group, and 0.001 to 5 parts by weight of a fluorine-based or silicone-based surfactant, wherein an ice agent is added so that the viscosity is 2 to 20 centipoise (cps). [Embodiment] The present invention will be explained in detail as follows. The positive photoresist composition for slit coating of the present invention contains 5 to 50 parts by weight of an acrylic or Novolak adhesive resin. As the acrylic adhesive resin, any of conventional acrylic adhesive resins used in a positive photoresist composition can be used. It is more preferable to use a resin having the following general formula 1 or 2 alone or in a mixture. Formula 1

XXX 200428152XXX 200428152

COOY1 COOH COOY2 於通式1中,X為氳原子或甲基,Y1為具有1至16個碳原 子之烷基或羥烷基,且Y2係選自由具有以下化學式(I)至(XX)結構 之化合物組成之群。COOY1 COOH COOY2 In Formula 1, X is a fluorene atom or a methyl group, Y1 is an alkyl group or a hydroxyalkyl group having 1 to 16 carbon atoms, and Y2 is selected from the group having the following chemical formulae (I) to (XX) Group of compounds.

CH2=C - CO—O - Ra CH2==C—CO—Ο—R2hCH2 = C-CO—O-Ra CH2 == C—CO—〇—R2h

ch2~c-co-o~r2ch2 ~ c-co-o ~ r2

(I) (Π)an) (IV) (V) (VI) (VB) 01) (IX) 200428152(I) (Π) an) (IV) (V) (VI) (VB) 01) (IX) 200428152

chU〜、OHchU ~, OH

chUchU

CH2=C—CO-I^RiT 、〇H CH2=C-C0-0-R2—O—(C〇-R2—OJk-CO-N^CH2 = C-CO-I ^ RiT, 〇H CH2 = C-C0-0-R2-O- (C〇-R2-OJk-CO-N ^

ReRe

R2—〇-(C〇-Ra-〇)k-CO—N CH2=C—C0—0—R2—0—{CO—R2—C〇-N\R2—〇- (C〇-Ra-〇) k-CO—N CH2 = C—C0—0—R2—0— {CO—R2—C〇-N \

-¾ 一 0—(CO—R3—0}k—CO-N R4-¾ one 0— (CO—R3—0} k—CO-N R4

ohJWohJW

CH2==C—CO-Ο-R2 HICH2 == C—CO-Ο-R2 HI

co-o—ch2co-o—ch2

CH2=C—CO—O— R-Hi CH2=C—CO—O-R2-CH·CH2 = C—CO—O— R-Hi CH2 = C—CO—O-R2-CH ·

CH2—O—COCH2—O—CO

o - ch2〉ch o-ch/ ch2— CH2—o-ch2〉 ch o-ch / ch2— CH2—

(X) (XI) (ΧΠ)(xm) (XIV) (XV) (XVI) (XVH) (XVffl) (XIX) (XX) 於化學式(I)至(xx)中,Ri為氳原子或曱基’ R2為具有1至 10個碳原子之伸烷基,R3為具有1至10個碳原子之烴,R4為氫 原子或曱基,Rs為具有 10。 1至10個碳原子之烴,且k為整數〇至 通式2 於,式2/,重複單元A係選自由甲基丙烯酸罕醋、苯乙烯、 二+稀丙稀酉夂異冰片醋及甲基丙烯酸異冰片酉旨、丙烯酸 二環細旨、甲基丙烯酸二環摘、丙烯酸二環戊烯醋、甲基丙烯 U衣戊烯I、丙烯酸二環戊基乙氧基自旨、曱基丙雜二環戊基 乙氧基醋、丙烯酸二環鱗基乙氧基g旨、f基丙烯酸二環戊浠基 乙氧基醋等組成之群,B係選自由f基丙烯酸縮水甘油醋、甲基 丙稀酉通乙gs、—甲基胺基甲基丙烯_旨、丙稀醢胺等組成之群, 且C為丙烯酸或甲基丙_,其中具通式2結構之黏著纖脂含 有不論A、B及c順序之無規共聚物。 具通式1結構之黏著劑納旨係為由含有細t之單體與含有雙 鍵之單體城之絲物。齡含有此找物之本發明正光阻組成 物施於基板且接著形成圖案,則均勻性極佳,而沒有任何缺陷(例 如顯影後之殘餘物)。換言之^式丨中之以具有指㈣碳 原子之烷基或羥烷基,藉以改良黏附性。再者,γ2含有巨大環脂 200428152 族結構(不似含有芳族基團之習知的丙烯酸系共聚物黏著劑樹 脂),藉以改良膜保留率及耐熱性(根據高玻璃轉變溫度)。 再者,具通式2結構之黏著劑樹脂顯示幾乎與具通式1結構 之黏者劑樹脂相同的效果。就通式2之黏著劑樹脂而言’其他種 類重複單元,例如如通式3(D)中所示具有2至16個烷基基團之丙 烯酸烷酯或曱基丙烯酸烷酯,可包括在本發明之範圍内。更特別 地,重複單元可為甲基丙烯酸曱酯、甲基丙烯酸丁酯、曱基丙烯 酸月桂酯、丙烯酸曱酯、丙烯酸丁酯、丙烯酸月桂酯、苯乙烯等。 通式3(X) (XI) (ΧΠ) (xm) (XIV) (XV) (XVI) (XVH) (XVffl) (XIX) (XX) In the formulae (I) to (xx), Ri is a 氲 atom or 曱The group 'R2 is an alkylene group having 1 to 10 carbon atoms, R3 is a hydrocarbon having 1 to 10 carbon atoms, R4 is a hydrogen atom or a fluorenyl group, and Rs is 10 having. A hydrocarbon of 1 to 10 carbon atoms, and k is an integer of 0 to 2 in Formula 2 /, the repeating unit A is selected from the group consisting of methacrylic acid vinegar, styrene, di + isopropyl isobornyl vinegar And isobornyl methacrylic acid purpose, acrylic acid dicyclopentane purpose, methacrylic acid dicyclohexyl acetate, acrylic acid dicyclopentene vinegar, methacrylic acid U-pentene I, acrylic acid dicyclopentyl ethoxy acid purpose, A group consisting of propyl dicyclopentyl ethoxy vinegar, acrylic dicyclopentyl ethoxy g, f-based dicyclopentyl fluorenyl ethoxy vinegar, etc. B is selected from the group consisting of f-based glycidyl acetic acid vinegar , Methacrylic acid, gs, -methylaminomethacrylic acid, acrylic acid, methacrylamine, etc., and C is acrylic acid or methacrylic acid, in which the adhesive cellulosic structure with the general formula 2 structure Contains random copolymers regardless of A, B and c order. The purpose of the adhesive having the structure of the general formula 1 is a silk material consisting of a monomer containing fine t and a monomer city containing double bonds. When the positive photoresist composition of the present invention containing this object is applied to a substrate and then patterned, the uniformity is excellent without any defects (such as a residue after development). In other words, an alkyl group or a hydroxyalkyl group having a carbon atom in the formula 丨 is used to improve the adhesion. In addition, γ2 contains a huge cycloaliphatic 200428152 group structure (unlike the conventional acrylic copolymer adhesive resins containing aromatic groups) to improve film retention and heat resistance (based on high glass transition temperature). Furthermore, the adhesive resin having the structure of the general formula 2 shows almost the same effect as the adhesive resin having the structure of the general formula 1. As for the adhesive resin of the general formula 2, 'other kinds of repeating units, such as alkyl acrylate or fluorenyl acrylate having 2 to 16 alkyl groups as shown in general formula 3 (D), may be included in Within the scope of the present invention. More specifically, the repeating unit may be methacrylate, butyl methacrylate, methacrylate lauryl, methacrylate, butyl acrylate, lauryl acrylate, styrene, and the like. Formula 3

特別地,當使用通式1之黏著劑樹脂與通式2之黏著劑樹脂 時’圖案的硬度可改善,且白化現象可消失,因為黏著劑樹脂與 組成物中其他光阻成分間之相容性增加:了。 就送沃拉克樹脂而言,可使用任一種熟知的諾沃拉克樹脂, 其可經由揭示於“Chemistry and Application of Phenolic Resins, Knop A and Scheib,W·; Springer Verlag,New York, 1979 Chapter 4” 之方法合成。 再者,本發明之正光阻組成物包含0.1〜50重量份之光活性化 合物。就光活性化合物而言,可使用任一種習用的光活性化合物, 11 200428152 例如2,2,3,4,4’-五羥基二苯甲嗣、2,2,,3,4,4,,5-六羥基二苯甲酮、 2,2,3,4,4·五綠二苯基诚、2,21,3,4,4,,5_讀基二苯基丙烧、 2,3’4-—經基二苯曱酮、2,3,4_三羥基苯乙酮、2,从三羥基苯基己 基酉同2,4,4-二赵基二苯甲酉同、2,4,6_三經基二苯甲酉同、2,3,冬三經 基2甲基—笨曱酮、2,2i,4,4L四羥基二苯甲酮、四經基二 苯甲酮等之1,2-重氮f碳斗或5-磺酸鹽。 於本發明正光阻組成物中含環氧或胺基團之糊化合物改良 了 ITO電極與組成物間之黏附性以及硬化後之财熱性。此糊化 &物包έ選自由(3'縮水甘油氧基丙基)三甲氧基矽烷、(3_縮水甘油 氧基丙基)三乙氧基魏、(3'縮水甘油氧基丙基)甲基二甲氧基砍 烧O'縮水甘油氧基丙基)甲基二乙氧基石夕烧、(S'縮水甘油氧基丙 基)一甲基曱氧基石夕烧、(3'縮水甘油氧基丙基)二曱基乙氧基石夕烧、 3,4-環氧基丁基三甲氧基石夕烧、3,4_環氧基丁基三乙氧基石夕烧、 2_(3,4-環氧基環己基)乙基三甲氧基矽烧、2_(3,4_環氧基環己基)乙 基二乙氧基矽烷、胺基丙基三甲氧基矽烷等組成之群中之至少一 者。矽酮化合物之含量為〇 〇〇1至5重量份,且較佳為〇 〇5至〇 ι 重量份。 再者’本發明之正光阻組成物中包含0 001至5重量份之氟 基底或矽酮基底的表面活性劑。氟基底或矽酮基底的表面活性劑 係商品名 Megaface F142D、F172、F-172D、F177P、R-08、F-470、 P_471 ' F475(由 Dainippon Ink & Chemicals 製造)、FC-170C、 12 200428152 FC-430、FC-431(由 Sumotomo 3M co·,Ltd.製造)、BYK 306、307、 310、331、333 (由 BYK-Chemie 製造)等出售。 另外,必要時,於正光阻組成物中可使用添加劑,例如光敏 劑、熱聚合抑制劑、消泡劑及勻平劑。 較佳添加溶劑以使得本發明正光阻組成物具2〜2〇釐泊之黏 度。更佳為调整黏度至3〜10釐泊(此更有利於控制無針孔之薄層 厚度)。溶劑包含選自由醋酸乙酯、醋酸丁酯、一縮二乙二醇二甲 基醚、一縮二乙二醇二甲基乙基_、丙酸曱基甲氧基酯、丙酸乙 基乙氧基醋(EEP)、乳酸乙酯、丙二醇曱基醚醋酸酯(pGMEA)、丙 一醇甲基醚、丙二醇丙基_、甲基溶纖劑醋酸酯、乙基溶纖劑醋 酸酯、一縮二乙二醇曱基醋酸酯、一縮二乙二醇乙基醋酸酯、丙 酮、甲基異丁基酮、環己§同、二甲基甲醯胺(DMF)、n,n_二曱基 乙醯胺(DMAc)、N-曱基-2-畋咯烷酮(NMP)、γ-丁内酯、二乙醚、 乙一醇—曱基醚、一乙一醇二曱幽|(digiyme)、四氫咴喃(thf)、甲 醇、乙醇、異丙醇、甲基溶纖劑、乙基溶纖劑、一縮二乙二醇曱 基醚、一縮二乙二醇乙基醚、一縮二丙二醇甲基醚、甲苯、二曱 笨、己烷、庚烷、辛烷等組成之群中之至少一者。 本發明將詳細地說明如下。然而,應暸解詳細說明及同時代 表本U車乂佳:^體例之特殊實施例係僅供說明之用,因n習此技 藝者,自本詳細說明,#可明白在本發明精神及範圍内之許多變化 及潤飾。 13 200428152 具體例1〜20 根據如下表1之成分及含量,製備正光阻組成物。 甲酚-甲醛諾沃拉克樹脂:10重量% 2,2,5,5’-四羥基二苯甲酮之1,2_重氮|趨各磺酸鹽:2加% (3-縮水甘油基丙基)三曱氧基矽烷:〇〇5重量% 氟基底的表面活性劑:0.03重量% 溶劑:殘餘量In particular, when the adhesive resin of the general formula 1 and the adhesive resin of the general formula 2 are used, the hardness of the pattern can be improved and the whitening phenomenon can be eliminated because of the compatibility between the adhesive resin and other photoresist components in the composition Sexual increase: now. As far as Volak resin is concerned, any well-known Novolak resin can be used, which can be disclosed through "Chemistry and Application of Phenolic Resins, Knop A and Scheib, W .; Springer Verlag, New York, 1979 Chapter 4" Method synthesis. Furthermore, the positive photoresist composition of the present invention contains 0.1 to 50 parts by weight of a photoactive compound. As far as photoactive compounds are concerned, any conventional photoactive compounds can be used, such as 2,2004,152,152,2,2,3,4,4'-pentahydroxybenzophenone, 2,2,3,4,4 ,, 5-Hexahydroxybenzophenone, 2,2,3,4,4,5 pentagreen diphenyl sincere, 2,21,3,4,4 ,, 5-reading diphenyl propane, 2,3 '4-—Mesityl benzophenone, 2,3,4-trihydroxyacetophenone, 2, from trihydroxyphenylhexylpyridine with 2,4,4-dichazylbenzophenone with 2, 4,6_trisyl benzophenone, 2,3, trisyl 2-methyl-benzone, 2,2i, 4,4L tetrahydroxybenzophenone, tetrabenzyl benzophenone Wait for 1,2-diazo f carbon bucket or 5-sulfonate. The paste compound containing an epoxy or amine group in the positive photoresist composition of the present invention improves the adhesion between the ITO electrode and the composition and the financial and thermal properties after hardening. This gelatinized material is selected from the group consisting of (3 'glycidyloxypropyl) trimethoxysilane, (3-glycidyloxypropyl) triethoxy, and (3'glycidyloxypropyl). ) Methyldimethoxy oxamine O'glycidyloxypropyl) Methyldiethoxy stone yaki, (S 'Glycidyloxypropyl) monomethyloxy oxy stone yaki, (3' Shrink Glyceryloxypropyl) dimethylethoxylate, 3,4-epoxybutyltrimethoxylate, 3,4-epoxybutyltriethoxylate, 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyldiethoxysilane, aminopropyltrimethoxysilane, etc. At least one. The content of the silicone compound is from 0.001 to 5 parts by weight, and preferably from 0.05 to 500,000 parts by weight. Furthermore, the positive photoresist composition of the present invention contains 0.001 to 5 parts by weight of a fluorine-based or silicone-based surfactant. Fluorine- or silicone-based surfactants are trade names Megaface F142D, F172, F-172D, F177P, R-08, F-470, P_471 'F475 (manufactured by Dainippon Ink & Chemicals), FC-170C, 12 200428152 FC-430, FC-431 (manufactured by Sumotomo 3M Co., Ltd.), BYK 306, 307, 310, 331, 333 (manufactured by BYK-Chemie), etc. are sold. In addition, if necessary, additives such as a photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, and a leveling agent may be used in the positive photoresist composition. A solvent is preferably added so that the positive photoresist composition of the present invention has a viscosity of 2 to 20 centipoise. It is better to adjust the viscosity to 3-10 centipoise (this is more conducive to controlling the thickness of the thin layer without pinholes). The solvent contains a solvent selected from the group consisting of ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl, ethyl methoxy propyl propionate, and ethyl ethyl propionate Ethyl vinegar (EEP), ethyl lactate, propylene glycol methyl ether acetate (pGMEA), glycerol methyl ether, propylene glycol propyl_, methyl cellosolve acetate, ethyl cellosolve acetate, a Diethylene glycol acetoacetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexyl, dimethylformamide (DMF), n, n_di Fluorenylacetamide (DMAc), N-fluorenyl-2-pyrrolidone (NMP), γ-butyrolactone, diethyl ether, ethylene glycol-fluorenyl ether, monoethylene glycol difluoride | (digiyme) , Tetrahydrofuran (thf), methanol, ethanol, isopropanol, methyl cellosolve, ethyl cellosolve, diethylene glycol ethyl ether, diethylene glycol ethyl ether, At least one of the group consisting of dipropylene glycol methyl ether, toluene, dioxan, hexane, heptane, octane and the like. The present invention will be explained in detail as follows. However, it should be understood that the detailed description and representative of this U car are also good: ^ The special embodiment of the system is for illustration purposes only. For those skilled in this art, from this detailed description, # can understand that it is within the spirit and scope of the present invention Many changes and retouching. 13 200428152 Specific Examples 1 to 20 According to the components and contents of Table 1 below, a positive photoresist composition was prepared. Cresol-formaldehyde novolak resin: 10% by weight of 1,2_diazo of 2,2,5,5'-tetrahydroxybenzophenone | Each sulfonate: 2 plus% (3-glycidyl (Propyl) trimethoxysilane: 5% by weight, surfactant based on fluorine: 0.03% by weight, solvent: residual amount

Megaface F142D(由 Dainippon Ink & Chemicals co.製造)係用 作亂基底的表面活性劑。 所形成的正光阻組成物之黏度為約4釐泊(cps)。 ^MMJ2U39 根據如下表2之成分及含量,製備正光阻組成物。 丙烯酸系樹脂·· 10重量% 2,2,5,5’-四海基二苯曱酮之1,2_重氮|碳_5_石黃酸鹽:加% (3-縮水甘油基丙基)三甲氧基石夕垸:〇·〇5重量% 氟基底的表面活性劑:0·03重量% 溶劑:殘餘量 使用通式1之丙稀酸系黏著麵脂(其中χ為甲基,γ1為甲 基’且Υ2為具私為甲基之化學式(II))。 14 200428152Megaface F142D (manufactured by Dainippon Ink & Chemicals co.) Is a surfactant used as a messy substrate. The viscosity of the formed positive photoresist composition was about 4 centipoise (cps). ^ MMJ2U39 According to the composition and content of Table 2 below, a positive photoresist composition was prepared. Acrylic resin · 10% by weight of 2,2,5,5'-tetrakisylbenzophenone 1,2_diazo | carbon_5_ lutein: plus% (3-glycidylpropyl ) Trimethoxylithium: 0.05% by weight. Surfactant based on fluorine: 0.03% by weight. Solvent: Residual amount. Use acrylic adhesives of general formula 1 (where χ is methyl and γ1 is Methyl 'and hydrazone 2 is a chemical formula (II) having a methyl group. 14 200428152

Megaface F142D(由 Dainippon 她 & Chemicals c〇 製造)係用 作氟基底的表面活性劑。 所形成的正光阻組成物之黏度為約4釐泊(cps)。 具體例40〜71 除制DMC作為溶劑,城據表3改變表祕性劑之類型 及含量外’錢與具_21巾_之方式,製紅雜組成物。 所形成的正光阻組成物之黏度為約4釐泊(CP)。 根據此等具體例之正光阻組成物之評估係於心玻璃上進 行。測試塗層之塗佈性#、均勻度及邊緣輪廓如下。結果顯示於 表1至3中。 (1)塗佈性質 以無旋轉式塗佈機將正光阻組成物塗佈於〇破璃上,且接著 於9(TC下預烘烤約2分鐘。接著,左抽咏τ 财在麟下,以肉眼觀察塗層。 偏若無塗佈缺陷,職表「佳」,姻為「不 (2)均勻度 以無凝轉式塗佈機將正光阻組成物塗佈於 於90°C下預烘烤約2分铲拉# 乂 、曰、 鐘。接者,以薄膜測厚儀(nanospec)於1 個位置測量塗層厚度。供甚 。 倘右;度之最大值與最小 遍,則代表「佳」,蝴為「不佳」。 ]之產3 15 200428152 (3)邊緣輪廓 以無旋轉式塗佈機將正光阻組成物塗佈於Cr玻璃上,且接著 於90°C下預烘烤約2分鐘。接著,以輪廓儀掃描邊緣面積。倘若 圖案内壁與基板間之角度大於55°,則代表「佳」,否則為「不佳」。 表1 具體 例 溶劑 均勻 度 邊緣 輪廊 塗佈 缺陷 I II Ill 比例% (1:11:111) 1 PGMEA - - 100:0:0 佳 佳 佳 2 PGMEA MCA 95:5:0 佳 佳 佳 3 PGMEA MCA - 90:10:0 佳 佳 佳 4 PGMEA MCA - 85:15:0 佳 佳 佳 5 PGMEA MCA - 80:20:0 佳 佳 佳 6 PGMEA MCA - 70:30:0 佳 佳 佳 7 PGMEA MCA NBA 95:5:5 佳 佳 佳 8 PGMEA MCA NBA 80:10:10 佳 佳 佳 9 PGMEA MCA NBA 70:15:15 佳 佳 佳 10 DMC - - 100:0:0 佳 佳 佳 16 200428152 11 DMC NBA - 90:10:0 佳 佳 佳 12 DMC NBA - 80:20:0 佳 佳 佳 13 ECaA - - 100:0:0 佳 佳 佳 14 ECaA NBA _ 95:5:0 佳 佳 佳 15 ECaA NBA - 90:10:0 佳 佳 佳 16 ECaA NBA - 80:20:0 佳 佳 佳 17 PGMEA EEP - 90:10:0 佳 佳 佳 18 PGMEA EEP - 80:20:0 佳 佳 佳 19 PGMEA EEP NBA 90:5:5 佳 佳 佳 20 PGMEA EEP NBA 80:10:10 佳 佳 佳 表2 具體例 溶劑 均勻度 邊緣輪 廓 塗佈缺 陷 I II 比例 %(I:II) 21 DMC - 100:0 佳 佳 佳 22 DMC NBA 90:10 佳 佳 佳 23 DMC NBA 80:20 佳 佳 佳 24 DMC NBA 70:30 佳 佳 佳 25 DMC MCA 90:10 佳 佳 佳 26 DMC MCA 80:20 佳 佳 佳 17 200428152 27 DMC MCA 70:30 佳 佳 佳 28 DMC CHX 90:10 佳 佳 佳 29 DMC CHX 80:20 佳 佳 佳 30 DMC CHX 70:30 佳 佳 佳 31 DMC PGMEA 90:10 佳 佳 佳 32 DMC PGMEA 80:20 佳 佳 佳 33 DMC PGMEA 70:30 佳 佳 佳 34 DMC EEP 90:10 佳 佳 佳 35 DMG EEP 80:20 佳 佳 佳 36 DMC EEP 70:30 佳 隹 佳 37 DMC PGPE 90:10 佳 佳 '佳 38 DMC PGPE 80:20 佳 佳 佳 39 DMC PGPE 70:30 佳 佳 佳 表3 具體例 表面活性劑 均勻度 邊緣輪 廓 塗佈缺 陷 類型 含量 40 Megaface F142D 0.01 佳 佳 佳 41 F142D 2 佳 佳 佳 42 F172 0.01 佳 佳 佳 18 200428152 43 F172 2 佳 佳 佳 44 F-172D 0.01 佳 佳 佳 45 F-172D 2 佳 佳 佳 46 F177-P 0.01 佳 佳 佳 47 F177-P 2 佳 佳 佳 48 R-08 0.01 隹 佳 佳 49 R-08 2 佳 佳 佳 50 F-470 0.01 佳 佳 佳 51 F-470 2 佳 佳 佳 52 F-471 0.01 隹 佳 佳 53 F-471 2 佳 佳. 佳 54 F-475 0.01 佳 佳 佳 55 F-475 2 佳 佳 佳 56 FC-170C 0.01 佳 佳 佳 57 FC-170C 2 佳 佳 佳 58 FC-430 0.01 隹 佳 佳 59 FC-430 2 隹 佳 佳 60 FC-431 0.01 佳 佳 佳 61 FC-431 2 佳 佳 佳 62 BYK306 0.01 佳 佳 佳 63 BYK306 2 佳 佳 佳 64 BYK307 0.01 佳 佳 佳 19 200428152 65 ΒΥΚ307 2 佳 佳 佳 66 ΒΥΚ310 0.01 ----— 佳 佳 佳― 67 ΒΥΚ310 2 佳 佳 佳 68 — ΒΥΚ331 0.01 佳— 佳 佳一 69 —ΒΥΚ331 2 佳 佳 70 ΒΥΚ333 0.01 佳 佳 佳~~ 71 ΒΥΚ333 一· 1 2 佳 佳 佳Megaface F142D (manufactured by Dainippon & Chemicals Co) is a surfactant used as a fluorine substrate. The viscosity of the formed positive photoresist composition was about 4 centipoise (cps). Specific examples 40 to 71 Except for the production of DMC as a solvent, the type and content of the secret agent were changed according to Table 3, and the method was used to produce a red miscellaneous composition. The viscosity of the formed positive photoresist composition was about 4 centipoise (CP). The evaluation of the positive photoresist composition according to these specific examples was performed on a core glass. The test coating's coatability #, uniformity and edge contour are as follows. The results are shown in Tables 1 to 3. (1) Coating properties The positive photoresist composition was coated on a glass with a non-rotary coater, and then pre-baked at 9 ° C for about 2 minutes. Then, Zuo Zuo Yong Tsao Choi was under the forest Observe the coating with the naked eye. If there is no coating defect, the job list is "good", and the marriage is "no (2) uniformity. The positive photoresist composition is coated at 90 ° C with a non-coagulation coating machine. Pre-bake about 2 minutes shovel pull # 乂, 、, 钟. Then, use a film thickness gauge (nanospec) to measure the thickness of the coating at 1 position. Very much. If the right; maximum and minimum passes, then It stands for "good", and butterfly is "poor." Produced by 3 15 200428152 (3) The edge profile was coated on a Cr glass with a non-rotary coater, and then pre-cured at 90 ° C. Bake for about 2 minutes. Next, scan the edge area with a profilometer. If the angle between the inner wall of the pattern and the substrate is greater than 55 °, it means "good", otherwise it is "poor". Table 1 Specific examples Solvent uniformity edge contour Coating defect I II Ill Proportion% (1: 11: 111) 1 PGMEA--100: 0: 0 Jiajiajia 2 PGMEA MCA 95: 5: 0 Jiajiajia 3 PGMEA MCA- 90: 10: 0 Allison 4 PGMEA MCA-85: 15: 0 Allison 5 PGMEA MCA-80: 20: 0 Allison 6 PGMEA MCA-70: 30: 0 Allison 7 PGMEA MCA NBA 95: 5: 5 Allison 8 PGMEA MCA NBA 80:10:10 Allison 9 PGMEA MCA NBA 70:15:15 Allison 10 DMC--100: 0: 0 Allison 16 200428152 11 DMC NBA-90: 10: 0 Allison 12 DMC NBA-80: 20: 0 Allison 13 ECaA--100: 0: 0 Allison 14 ECaA NBA _ 95: 5: 0 Allison 15 ECaA NBA-90:10: 0 Allison 16 ECaA NBA-80: 20: 0 Allison 17 PGMEA EEP-90: 10: 0 Allison 18 PGMEA EEP-80: 20: 0 Allison 19 PGMEA EEP NBA 90: 5: 5 All Jiajia 20 PGMEA EEP NBA 80:10:10 Jiajiajia Table 2 Specific examples Solvent uniformity Edge contour coating defect I II Proportion% (I: II) 21 DMC-100: 0 Jiajiajia 22 DMC NBA 90:10 Allison Jia 23 DMC NBA 80:20 Allison Jia 24 DMC NBA 70:30 Allison Jia 25 DMC MCA 90:10 Allison Jia 26 DMC MCA 80:20 Allison Jia 17 200428152 27 DMC MCA 70:30 Allison Jia 28 DMC CHX 90:10 Allison Jia 29 DMC CHX 80:20 Allison 30 DMC CHX 70: 30 Allison 31 DMC PGMEA 90: 10 Allison 32 DMC PGMEA 80: 20 Allison 33 DMC PGMEA 70: 30 Allison 34 DMC EEP 90: 10 Allison 35 DMG EEP 80: 20 Jiajiajia 36 DMC EEP 70:30 Jiajiajia 37 DMC PGPE 90:10 Jiajia 'Jia38 DMC PGPE 80:20 Jiajiajia 39 DMC PGPE 70:30 Jiajiajia Table 3 Surfactant uniformity of specific examples Edge contour coating defect type content 40 Megaface F142D 0.01 Allison 41 F142D 2 Allison 42 F172 0.01 Allison 18 200428152 43 F172 2 Allison 44 F-172D 0.01 Allison 45 F-172D 2 Allison 46 F177-P 0.01 Allison Plus 47 F177-P 2 Allison Plus 48 R-08 0.01 Allison Plus 49 R-08 2 Allison Plus 50 F-470 0.01 Allison Plus 51 F-470 2 Allison Plus 52 F -471 0.01 隹 Allison 53 F-471 2 Allison. Allison 54 F-475 0.01 Allison Allen 55 F-475 2 Allison Allen 56 FC-170C 0.01 Allison Allen 57 FC-170C 2 Allison Allen 58 FC- 430 0.01 隹 佳佳 59 FC-430 2 隹 佳佳 60 FC-431 0.01 佳佳 佳 61 FC-431 2 佳佳 佳 62 BY K306 0.01 Allison Plus 63 BYK306 2 Allison Plus 64 BYK307 0.01 Allison Plus 19 200428152 65 ΒΥΚ307 2 Allison Plus 66 ΒΥΚ310 0.01 ----— Allison Plus ― 67 ΒΥΚ310 2 Allison Plus 68 — ΒΥΚ331 0.01 Good — Good Jiayi 69 —ΒΥΚ331 2 Jiajia 70 ΒΥΚ333 0.01 Jiajiajia ~~ 71 ΒΥΚ333 One · 1 2 Jiajiajia

產業應用性 如上述,本發明之正光阻組成物,當以無旋轉式塗佈機於— 基板上形成一層(例如有機絕緣層)時,可形成無塗佈缺陷之均句塗 層,且易控制塗層之邊緣輪廓。 本發明已詳細地說明如上。然❿,應瞭解詳細說明及同時代 表本發明ϋ具體例之特殊實施例係僅供說明之用,因為熟習此技The industrial applicability is as described above. When the non-rotary coater is used to form a layer (such as an organic insulating layer) on a substrate, the positive photoresist composition of the present invention can form a uniform coating without coating defects, and is easy Controls the edge profile of the coating. The invention has been described in detail above. However, it should be understood that the detailed description and the specific embodiments simultaneously representing specific examples of the present invention are for illustration purposes only, as they are familiar with this technology

藝者,自本詳細綱,當可明自在本發簡神及細内之許多變化 及潤飾。 【圖式簡單說明】 【主要元件符號說明】 本案無圖式說明,故無元件符號 20Artists, from the detailed outline of this book, we should be able to understand the many changes and retouching in this book. [Brief description of the diagram] [Description of the main component symbols] There is no diagram description in this case, so no component symbol 20

Claims (1)

200428152 十、申請專利範圍: 1. 一種用於狹缝塗饰之正光阻組成物’其包含: 5〜5〇重量份之丙烯酸系或諾沃拉克黏著劑樹脂;〇1〜5〇重 量份之光活性化合物;0.祖〜5重量份之含環氧或胺基團之石夕酮 化合物;及0.001〜5重量份之氟基底或矽鲖基底的表面活性劑, 其中添加溶劑以使得黏度為2〜20釐泊(Cp❸。 2. 如申請專利範圍第1項所述之用於狹缝塗佈之正光阻組 成物,其中丙烯酸系黏著劑樹脂係選自由具以下通式^結構之 鲁 樹脂、具以下通式2結構之樹脂及其混合物紐成之群: 〈通式1&gt; XXX200428152 10. Scope of patent application: 1. A positive photoresist composition for slit coating, which comprises: 5 to 50 parts by weight of acrylic or Novolak adhesive resin; 0 to 50 parts by weight Photoactive compound; 0 ~ 5 parts by weight of an oxalate compound containing an epoxy or amine group; and 0.001 ~ 5 parts by weight of a fluorine-based or silicon-based surfactant, wherein a solvent is added so that the viscosity is 2 ~ 20 centipoise (Cp❸. 2. The positive photoresist composition for slit coating as described in item 1 of the scope of patent application, wherein the acrylic adhesive resin is selected from resins having the following general formula ^ Groups of resins and mixtures thereof having the following general formula 2: <General formula 1> XXX COOY1 COOH C〇〇Y2COOY1 COOH C〇〇Y2 其中X為氫原孩㈣,γ1為具有i錢個·子之烧基或 f工燒基,且Y係選自由具有以下化學式①至(明結構之化合 物組成之群; ch2: CH2=0—C〇 〜Wherein X is a hydrogen atom, γ1 is an alkyl group or an alkyl group having an ionic group, and Y is selected from the group consisting of compounds having the following chemical formulas ① to (bright structure; ch2: CH2 = 0— C〇 ~ C—CO 〜C—CO 〜 (I) (Π) 21 200428152 CH2===C—C〇—〇—R2一(I) (Π) 21 200428152 CH2 === C—C〇—〇—R2 一 CH上―CH on― CHg=C—CO—O— R2~CHg = C—CO—O— R2 ~ R4 CH2=C—CO—N-R2—〇~Rf 、〇H ChHR4 CH2 = C—CO—N-R2—〇 ~ Rf, 〇H ChH 0142=0一CO—O一R2—〇_(CO一R2一0)k一CO~0142 = 0-CO-O-R2--0_ (CO-R2-0) k-CO ~ Re R2一O一(CO—R3—0)k—CO—N R4 chJ-co-o-r.-o-^-o.-oo-S; ReRe R2—O— (CO—R3—0) k—CO—N R4 chJ-co-o-r.-o-^-o.-oo-S; Re (m) (IV) (V) (VI)(w) (VUI) (K) (X) (XI) (ΧΠ)(xm) (XIV) CH2=&lt;!i-CO-0-¾ -Rg—0—(CO-Ra—0)k-C0~N R4(m) (IV) (V) (VI) (w) (VUI) (K) (X) (XI) (ΧΠ) (xm) (XIV) CH2 = &lt;! i-CO-0-¾ -Rg —0— (CO-Ra—0) k-C0 ~ N R4 22 (XV) (XVI)20042815222 (XV) (XVI) 200428152 ?Η c? Η c (χνπ) (xvm) (XIX) (XX)(χνπ) (xvm) (XIX) (XX) /、卜、、11原子或曱基,R2為具有Ui〇個碳原子之伸炫基, r3為具有UK)_子之烴,子或甲基,&amp;為 具有1至10個碳原子之烴,且k為整數G至如; &lt;通式2&gt;/, Bu,, 11 atoms or fluorenyl groups, R2 is a fluorinated group having Ui0 carbon atoms, r3 is a hydrocarbon having a UK) atom, an atom or a methyl group, &amp; is an atom having 1 to 10 carbon atoms Hydrocarbon, and k is an integer G to &lt; &lt; Formula 2 &gt; 重複單元A係選自由甲基㈣酸?酯、苯乙烯、_基苯乙 烯、丙烯酸異冰片賴及甲基丙烯酸異冰片醋、丙烯酸二環戊 醋、甲基丙稀酸二環戊酉旨、丙烯酸二_烯酯、甲基丙稀酸二 環戊湘旨、丙稀酸二環絲乙氧基g|、甲基丙烯酸二環戍基乙 氧基醋、丙_二環;^聰乙餘g旨及f絲烯酸二環戊稀基 23 200428152 乙氧基酯組成之群,B係選自由甲基丙烯酸縮水甘油酯、甲基 丙烯酸羥乙酯、二甲基胺基甲基丙烯酸酯及丙烯醯胺組成之 群,且C為丙烯酸或甲基丙烯酸,其中具通式2結構之黏著劑 樹脂含有不論A、B及C順序之無規共聚物。 3.如申請專利範圍第i項所述之用於狭縫塗佈之正光阻組 成物’其中含環氧或胺基團之矽酮化合物包含選自由(3_縮水甘 油氧基丙基)三甲氧基魏、(3'縮水甘油氧基丙基)三乙氧基石夕 烷、(3_縮水甘油氧基丙基)甲基二甲氧基矽烷、(I縮水甘油氧 基丙基)甲基二乙氧基魏、(3_縮水甘油氧基丙基)二甲基甲氧 基梦烧、〇縮水甘油氧基丙基)二甲基乙氧基梦u,4_環氧基 丁基三曱氧基魏、3,4-環氧基丁基三乙氧基石夕烧、2_(3,4_環氧 基環己基)乙基三甲氧基梦烧、2_(3,4·環氧基環己基)乙基三乙氧 基石夕烧及胺基丙基三甲氧基石夕烧組成之群中之至少一者。 4.如申請專利範圍第i項所述之用於狹縫塗佈之正光阻組 成物,其中溶劑包含選自由醋酸乙酯、醋酸丁酯、一縮二乙二 醇一甲基_、一縮一乙一醇二甲基乙基_、丙酸甲基甲氧基 醋、丙酸乙基乙氧基酯(EEP)、乳酸乙g旨、力二醇曱基_酸醋 (PGMEA)、丙二醇甲基醚、丙二_基_、甲基溶纖劑醋酸酿、 乙基溶纖劑醋酸酯、一縮二乙二醇甲基醋酸酯、一縮二乙二醇 乙基醋酸酯、丙酮、曱基異丁基酮、環己酮、二甲基甲醯胺 (DMF)、N,N-二甲基乙醯胺(DMAc)、队甲基各烷酉同 24 200428152 (NMP)、γ-丁内酯、二乙醚、乙二醇二曱基醚、二乙二醇二曱 峻(diglyme)、四氳吹喃(THF)、甲醇、乙醇、異丙醇、甲基溶 纖劑、乙基溶纖劑、一縮二乙二醇甲基_、一縮二乙二醇乙基 謎、-縮二丙二醇曱基醚、曱苯、二甲笨、己烧、庚烧及辛烧 組成之群中之至少一者。 5·如申請專利範圍第1項所述之用於狹缝塗佈之正光阻組 成物’氟基底或石夕酮基底的表面活性劑係選自由Megaface F142D、F172、F-172D、F177P、R、〇8、i?_470、F-471、F-475(由 Dainippon Ink &amp; Chemicals 製造)、FC-170C、FC-430、FC-431(由 Sumotomo 3M co·,Ltd·製造)、BYK 306、307、310、331、333 (由 BYK-Chemie製造)及其混合物組成之群。Is the repeating unit A selected from methylphosphonic acid? Ester, styrene, styrene-based, isobornyl acrylate and isobornyl methacrylate, dicyclopentyl acrylate, dicyclopentyl methacrylate, di_enyl acrylate, methacrylic acid Bicyclopentyl, bicyclosilethoxy, acrylic acid, dicyclopentylethoxy methacrylate, propylene dicyclopentane; ^ Congyiyu g, and dicyclopentyl f serene Group 23 200428152 group consisting of ethoxy esters, B is selected from the group consisting of glycidyl methacrylate, hydroxyethyl methacrylate, dimethylamino methacrylate and acrylamide, and C is acrylic acid Or methacrylic acid, wherein the adhesive resin having the structure of the general formula 2 contains a random copolymer regardless of the order of A, B, and C. 3. The positive photoresist composition for slit coating according to item i of the scope of the patent application, wherein the silicone compound containing an epoxy or amine group comprises a compound selected from (3-glycidoxypropyl) trimethyl Oxyhydroxyl, (3'glycidyloxypropyl) triethoxyxanthane, (3-glycidyloxypropyl) methyldimethoxysilane, (Iglycidyloxypropyl) methyl Diethoxybenzyl, (3-glycidyloxypropyl) dimethylmethoxy dream, 0glycidoxypropyl) dimethylethoxymonu, 4-epoxybutyltris Phenoxybenzyl, 3,4-epoxybutyltriethoxy sulphate, 2- (3,4-epoxycyclohexyl) ethyltrimethoxydream, 2- (3,4 · epoxy At least one of the group consisting of cyclohexyl) ethyltriethoxylate and aminopropyltrimethoxylate. 4. The positive photoresist composition for slit coating as described in item i of the scope of the patent application, wherein the solvent contains a material selected from the group consisting of ethyl acetate, butyl acetate, diethylene glycol, methyl, Monoethylene glycol dimethyl ethyl, methyl methoxy vinegar propionate, ethyl ethoxy propyl propionate (EEP), ethyl lactate, glycolide methyl acetic acid vinegar (PGMEA), propylene glycol a Ether, propylene glycol, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, pyrene Methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N, N-dimethylacetamide (DMAc), dimethyl methyl alkane, etc. 24 200428152 (NMP), γ-butane Lactone, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol diglyme, tetrahydropyran (THF), methanol, ethanol, isopropanol, methyl cellosolve, ethyl solvent Fiber agent, diethylene glycol methyl group, diethylene glycol ethyl group, -dipropylene glycol fluorenyl ether, toluene, dimethylbenzyl, hexane, heptane and octane At least one of them. 5. As described in item 1 of the patent application, the positive photoresist composition for slit coating, the fluorine-based or lithoxone-based surfactant is selected from Megaface F142D, F172, F-172D, F177P, R 〇8, i? _470, F-471, F-475 (manufactured by Dainippon Ink &amp; Chemicals), FC-170C, FC-430, FC-431 (manufactured by Sumotomo 3M co., Ltd.), BYK 306 , 307, 310, 331, 333 (manufactured by BYK-Chemie) and mixtures thereof. 25 200428152 七、指定代表圖·· (一) 本案指定代表圖為:第( )圖。 (二) 本代表圖之元件符號簡單說明: 本發明無指定代表圖,故無元件符號25 200428152 VII. Designated Representative Chart (1) The designated representative map in this case is: (). (2) Brief description of the component symbols of the representative diagram: There is no designated representative diagram in the present invention, so there is no component symbol 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式:8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: (XX)(XX) 55
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TWI456343B (en) * 2006-03-30 2014-10-11 Nippon Steel & Sumikin Chem Co Light-shielding resin composition for color filter and color filter

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KR100595818B1 (en) * 2004-03-10 2006-07-03 (주)서원인텍 Coating method of elastomer molded article
JP2005338831A (en) * 2004-05-25 2005-12-08 Samsung Electronics Co Ltd Photoresist composition for organic film of liquid crystal display, spinless coating method thereof, fabrication method of organic film pattern using the same, and liquid crystal display fabricated by the same
KR101299967B1 (en) * 2009-06-23 2013-08-27 주식회사 엘지화학 Thermosetting resin composition for spinless
CN106866435A (en) * 2017-03-01 2017-06-20 无锡阿科力科技股份有限公司 A kind of polyetheramine containing caged scaffold and preparation method thereof

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* Cited by examiner, † Cited by third party
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TWI456343B (en) * 2006-03-30 2014-10-11 Nippon Steel & Sumikin Chem Co Light-shielding resin composition for color filter and color filter

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