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TW200424228A - Organic compositions - Google Patents

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TW200424228A
TW200424228A TW92110003A TW92110003A TW200424228A TW 200424228 A TW200424228 A TW 200424228A TW 92110003 A TW92110003 A TW 92110003A TW 92110003 A TW92110003 A TW 92110003A TW 200424228 A TW200424228 A TW 200424228A
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Taiwan
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TW92110003A
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Chinese (zh)
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Paul G Apen
Ananth Naman
Bo Li
Kreisler S Lau
Boris A Koroley
Iwamoto Nancy
B Bedwell William
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Honeywell Int Inc
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Priority claimed from US10/160,773 external-priority patent/US7049005B2/en
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200424228A publication Critical patent/TW200424228A/en

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Abstract

The present invention provides a composition comprising: (a) thermosetting component comprising (1) optionally at least one monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from hydrogen, aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; Gw is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; I is from 0 to 10; j is from 0 to 10; and w is 0 or 1; (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to the substrate. The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.

Description

200424228 Ο) 5夂、發明說明 (發明說明應敘明··發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 中申請案之趱 本申請案是2002年5月30日所申請待審第10/160773號之 延%邵份,主張2001年5月30曰所申請待審中臨時專利申 睛案第60/294,864號;2001年9月10日申請之第60/318,503號 ’ 2〇〇2年1月15日申請之第60/350187號;和2002年1月24曰申 ’之第60/352098號之權利,該案之全文以引用的方式併入 本文中。 發明範m 本發明係關於半導體裝置,特定而言,係關於具有一種 有機低介電常數材料之半導體裝置和其製造方法。 發明背景 致力於棱向半導體裝置的性能和速度時,半導體裝置製 迻業者員尋求降低互連的線幅和間隔,同時使傳遞損失最 】並降低互連的甩谷性偶合。一個減少耗電量並減少電容 量的方法是藉著降低絕緣材料之介電常數(亦引用為,,k,,) 或刀開β互連的介電。吾人尤其需要具有低介電常數之絕 =料,因為該材料典型上容許較快速的信號傳輸,降低 電容量和導體線間之串擾,並降低驅動積體電路需要的電 、為工氣的” %吊數是1 ·〇,-個主要的目#是將絕緣 體材料的介電常數向下降低至10之理論極限,且技藝中 已知數種降低絕緣材料 4 H、 冢材枓介電常數的方法。這些技術包括在 、、且5物添加元辛卩4 翁 、 、 )以降低鬆散材料的介電常數。其它 (2) (2)200424228 發明說明續頁 降低k的方、本 古包括使用交替性介電材料基質。 因此,1¾ ^ 跟著降低、互連線幅降低,需要將絕緣材料的介電常數 。例如::達到未來半導體裝置希望的改良性能和速度 尋求一# 1有互連線幅0·13或0.10微米且更低的裝置裝置 …電常數(k)<3的絕緣材料。 目前是使用 珍或氟化砂 化石夕(以〇2)和Si〇2改良物,如轨化二氧化 這些介電&破場(以下記為FSG)。在半導體裝置中常使用 和FSG具有承^ 土 4·0之氧化物作為介電質。雖然Si〇2 機械和熱念7八受製造半導體的熱循環和加工步驟需要的 過去用以、、冗 在工業上需要具較低介電常數的材料。 沉積法(以下積介電材料的方法可以分為二類··旋轉塗佈 數個發展較低介〃)和化學蒸氣沉積法(以下記為CVD)。 機、無機、有:/電常數材料的努力包括改變化學組成(有 非多孔性)。表\辨機摻合物)或改變介電基質(多孔性, (ΡΕ=強化電t;摘綠數f介電常數2.0至3.5之材料的發展 案中揭示的介電二:高密度電漿)。然而’在表1所示公告 有效介電材料需料和基質無法呈現許多希望的甚至是 高熱安定性、古 勺、、°σ物化性質,如較高機械安定性、 ^ 能夠被溶劑合、浐 多溫度、高模數或硬度,同時依然 上。因此,研斧^轉塗伟或沉積於基材、晶圓或其它表面 斤九其他可以、 啤 和材料可以是有 用以作為介電材料和層之化合物 式在目前並不可、的,即使這些化合物或材料以其現有形 以被當作介電體材料。 200424228 (3) 發明說明續頁 表1 材料 沉積法 介電常 數(k) 參考資料 氟化氧化矽 (SiOF) PE-CVD ; HDP-CVD 3.3-3.5 美國專利第6,278,174號 氫矽倍半氧烷 (HSQ) SOD 2.0-2.5 美國專利第 4,756,977、5,370,903 及5,486,564號;國際專利公告案 第 WO 00/40637號;E.S· Moyer等 人之,’Ultra Low k Silsesquioxane Based Resins’’,Concepts and Needs for Low Dielectric Constant <0.15 μιη Interconnect Materials; Now and the Next Millennium,由 American Chemical Society發行, 第 128-146 頁(1999年 11 月 14-17) 甲基矽倍半氧烷 (MSQ) SOD 2.4-2.7 美國專利第6,143,855號 聚有機矽 SOD 2.5-2.6 美國專利第6,225,238號 氟《化非晶形碳 (a-C:F) HDP-CVD 2.3 美國專利第5,900,290號 苯并環丁晞 (BCB) SOD 2.4-2.7 美國專利第5,225,586號 聚芳晞醚(PAE) SOD 2.4 美國專利第 5,986,045、5,874,516 和 5,658,994 號 聚對亞苯基二甲基 (N和 F) CVD 2.4 美國專利第5,268,202號 聚苯晞 SOD 2.6 美國專利第5,965,679和6,288,188 B1號;及Waeterloos等人之 "Integration Feasibility of Porous SiLK Semiconductor Dielectric’’, Proc. Of the 2001 International Interconnect Tech,Conf·, pp.253-254(2001) 烷 CVD, SOD <3.9 世界專利第WO 01/29052號 CVD, SOD <3.9 世界專利第WO 01/29141號 -10- 200424228 (4) 發明說明續頁 不幸地,多數發展中介電常數介於2.0和3.5間之SOD系統 苦於某些如上所述般機械和熱力性質的缺點,因此,工業 上需要發展在此介電常數範圍内的介電薄膜改良之加工 和性能。200424228 Ο) 5. The description of the invention (the description of the invention should state the technical field of the invention, the prior art, the content, the implementation mode and the simple description of the invention). This application is May 30, 2002. The extension of the pending application No. 10/160773 is Shao Fen, claiming that the pending temporary patent application No. 60 / 294,864 filed on May 30, 2001; No. 60 / 318,503 filed on September 10, 2001 No. 60/350187, filed January 15, 2002; and No. 60/352098, dated January 24, 2002, which is incorporated herein by reference in its entirety. The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having an organic low dielectric constant material and a method for manufacturing the same. BACKGROUND OF THE INVENTION When working on the performance and speed of semiconductor devices, semiconductor device movers seek to reduce the width and spacing of interconnects while minimizing transmission losses and reducing the threshing coupling of interconnects. One way to reduce power consumption and capacitance is to reduce the dielectric constant of the insulating material (also cited as,, k ,,) or the dielectric of the beta interconnect. I especially need a material with a low dielectric constant, because this material typically allows faster signal transmission, reduces capacitance and crosstalk between conductor lines, and reduces the electricity required to drive integrated circuits, which is gas-based. " The% hanging number is 1 · 〇, one of the main goals is to reduce the dielectric constant of the insulator material to a theoretical limit of 10, and several types of dielectric materials are known in the art to reduce the dielectric constant of the 4H and the mound material. These techniques include the addition of 4 to 5 yuan, and) to reduce the dielectric constant of the loose material. Other (2) (2) 200424228 Description of the Invention Continued ways to reduce k, this ancient includes Alternating dielectric material matrix is used. Therefore, as 1¾ ^ decreases and the interconnect line width decreases, the dielectric constant of the insulating material needs to be reduced. For example: to achieve the desired improved performance and speed of future semiconductor devices. Seek # 1 for interconnection Devices with a line width of 0.13 or 0.10 micrometers and lower ... Insulation materials with an electric constant (k) < 3. At present, it is the use of rare or fluorinated sand fossils (in 〇2) and SiO2 modified products, such as Rail Dioxide These Dielectrics & a mp; breaking field (hereinafter referred to as FSG). In semiconductor devices, FSG is often used as a dielectric with an oxide of 4.0. Although Si02 is mechanically and thermally heated, it is subject to thermal cycling and The processing steps required in the past, and redundantly in the industry, materials with lower dielectric constants are required. Deposition methods (the following methods of accumulating dielectric materials can be divided into two categories. Spin-coating several lower-development dielectrics) ) And chemical vapor deposition (hereinafter referred to as CVD). Organic, inorganic, and / or electrical constant materials include efforts to change the chemical composition (with non-porosity). Table \ discriminator blends) or change the dielectric matrix ( Porosity, (PE = reinforced electrical t; green number f; dielectric constant 2.0 to 3.5; dielectric material disclosed in the development case: high-density plasma). However, effective dielectric materials are announced in Table 1 Materials and substrates cannot exhibit many desired even high thermal stability, ancient spoon, ° σ physical and chemical properties, such as higher mechanical stability, ^ can be solvated, multi-temperature, high modulus or hardness, while still being . Therefore, the axe ^ transferred to Tu Wei or deposited on the substrate, wafer Or other surface compounds, compounds, and materials that can be useful as dielectric materials and layers are not currently available, even if these compounds or materials are in their existing form as dielectric materials. 200424228 (3) Description of the invention Continued Table 1 Dielectric constant of material deposition method (k) Reference material Silicon fluoride (SiOF) PE-CVD; HDP-CVD 3.3-3.5 US Patent No. 6,278,174 Hydrosilsesquioxane (HSQ) SOD 2.0-2.5 US Patent Nos. 4,756,977, 5,370,903, and 5,486,564; International Patent Publication No. WO 00/40637; ES Moyer et al., 'Ultra Low k Silsesquioxane Based Resins'', Concepts and Needs for Low Dielectric Constant < 0.15 μιη Interconnect Materials; Now and the Next Millennium, issued by the American Chemical Society, pages 128-146 (14-17 November 1999) methylsilsesquioxane (MSQ) SOD 2.4-2.7 United States Patent No. 6,143,855 Polyorganic Silicon SOD 2.5-2.6 U.S. Patent No. 6,225,238 Fluoride "Amorphous Carbon (aC: F) HDP-CVD 2.3 U.S. Patent No. 5,900,290 Benzocyclobutane ( BCB) SOD 2.4-2.7 U.S. Patent No. 5,225,586 polyarylene ether (PAE) SOD 2.4 U.S. Patent Nos. 5,986,045, 5,874,516 and 5,658,994 Poly-p-phenylene dimethyl (N and F) CVD 2.4 U.S. Patent No. 5,268,202 Benzene SOD 2.6 U.S. Patent Nos. 5,965,679 and 6,288,188 B1; and "Integration Feasibility of Porous SiLK Semiconductor Dielectric" by Waiterloos et al., Proc. Of the 2001 International Interconnect Tech, Conf., Pp.253-254 ( 2001) Alkane CVD, SOD < 3.9 World Patent No. WO 01/29052 CVD, SOD < 3.9 World Patent No. WO 01 / 29141-10-200424228 (4) Description of the Invention Continued unfortunately, most developments have a dielectric constant SOD systems between 2.0 and 3.5 suffer from some of the shortcomings of mechanical and thermal properties as described above. Therefore, the industry needs to develop improved processing and performance of dielectric films in this range of dielectric constants.

Reichert和Mathias敘述包括金剛烷分子之化合物和單體 ,其係屬於籠狀基(cage-based)分子,並經教示有用於作為 鑽石取代物。(Polym,Prepr. (Am. Chem. Soc·,Div. Polym· Chem·),1993,Vol· 34 (1),pp. 495-6; Polym,Prepr. (Am. Chem· Soc·,Div. Polym. Chem.), 1992, Vol. 33 (2), pp. 144-5; Chem. Mater·,1993,Vol· 5 (1),pp. 4-5; Macromolecules,1994,Vol. 27 (24), pp. 7030-7034; Macromolecules, 1994, Vol. 27 (24)? pp. 7015-7023; Polym,Prepr. (Am. Chem. Soc·,Div. Polym. Chem·),1995, Vol. 36 (1), pp. 741-742; 205th ACS National Meeting ConferenceReichert and Mathias describe compounds and monomers that include adamantane molecules, which are cage-based molecules and are taught to be used as diamond substitutes. (Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1993, Vol. 34 (1), pp. 495-6; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1992, Vol. 33 (2), pp. 144-5; Chem. Mater., 1993, Vol. 5 (1), pp. 4-5; Macromolecules, 1994, Vol. 27 (24 ), pp. 7030-7034; Macromolecules, 1994, Vol. 27 (24)? pp. 7015-7023; Polym, Prepr. (Am. Chem. Soc ·, Div. Polym. Chem ·), 1995, Vol. 36 (1), pp. 741-742; 205th ACS National Meeting Conference

Program, 1993, pp. 312; Macromolecules, 1994, Vol. 27 (24), pp. 7024-9; Macromolecules,1992,Vol· 25 (9),pp· 2294-306;Program, 1993, pp. 312; Macromolecules, 1994, Vol. 27 (24), pp. 7024-9; Macromolecules, 1992, Vol. 25 (9), pp. 2294-306;

Macromolecules, 1991, Vol. 24 (18), pp. 5232-3; Veronica R. Reichert, PhD Dissertation, 1994, Vol. 55-06B; ACS Symp. Ser.: Step-Growth Polymers for High-Performance Materials, 1996, Vol. 624, pp. 197-207; Macromolecules,2000,Vol. 33 (10),pp. 3855-3859; Polym, Prepr. (Am. Chem. Soc.? Div. Polym. Chem.)5 1999, Vol· 40 (2),pp. 620-621; Polym, Prepr. (Am. Chem. Soc.5 Div. Polym. Chem·),1999,Vol. 40 (2),pp. 577-78; Macromolecules, 1997, Vol. 30 (19), pp. 5970-5975; J. Polym. Sci, Part A: Polymer Chemistry,1997,Vol. 3 5 (9),pp· 1743-1751; Polym, Prepr. (Am.Macromolecules, 1991, Vol. 24 (18), pp. 5232-3; Veronica R. Reichert, PhD Dissertation, 1994, Vol. 55-06B; ACS Symp. Ser .: Step-Growth Polymers for High-Performance Materials, 1996 , Vol. 624, pp. 197-207; Macromolecules, 2000, Vol. 33 (10), pp. 3855-3859; Polym, Prepr. (Am. Chem. Soc.? Div. Polym. Chem.) 5 1999, Vol. 40 (2), pp. 620-621; Polym, Prepr. (Am. Chem. Soc. 5 Div. Polym. Chem.), 1999, Vol. 40 (2), pp. 577-78; Macromolecules, 1997, Vol. 30 (19), pp. 5970-5975; J. Polym. Sci, Part A: Polymer Chemistry, 1997, Vol. 3 5 (9), pp. 1743-1751; Polym, Prepr. (Am.

-11 - 200424228 (5) 發明說明續頁-11-200424228 (5) Description of the invention continued

Chem. Soc.? Div. Polym. Chem.)? 1996,Vol· 37 (2),pp. 243-244; Polym, Prepr. (Am. Chem. Soc., Div, Polym. Chem.), 1996, Vol. 37 (1),pp. 551-552; J· Polym. Sci·,Part A: Polymer Chemistry,1996, Vol. 34 (3),pp. 397-402; Polym, Prepr. (Am. Chem. Soc.5 Div. Polym. Chem·),1995,Vol· 36 (2),pp. 140-141; Polym,Prepr. (Am. Chem. Soc·,Div. Polym. Chem·),1992,Vol. 33 (2),pp. 146-147; J. Appl. Polym. Sci·,1998,Vol. 68 (3),pp. 475-482) 0 Reichert和 Mathias所述之金剛烷基底化合物和單體較佳用以形成在 熱固核心具金剛烷分子之聚合物。然而,在研究中由 Reichert和Mathias揭示之化合物,由於設計選擇,僅包括一 個金剛烷基底化合物之異構物。結構A展示此對稱性對-異構物1,3,5,7-四[4’-(苯基乙炔基)苯基]金剛烷:Chem. Soc.? Div. Polym. Chem.)? 1996, Vol. 37 (2), pp. 243-244; Polym, Prepr. (Am. Chem. Soc., Div, Polym. Chem.), 1996, Vol. 37 (1), pp. 551-552; J. Polym. Sci., Part A: Polymer Chemistry, 1996, Vol. 34 (3), pp. 397-402; Polym, Prepr. (Am. Chem. Soc. 5 Div. Polym. Chem.), 1995, Vol. 36 (2), pp. 140-141; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1992, Vol. 33 (2), pp. 146-147; J. Appl. Polym. Sci., 1998, Vol. 68 (3), pp. 475-482) 0 The adamantyl base compounds and monomers described by Reichert and Mathias Ideal for forming polymers with adamantane molecules in the thermoset core. However, the compounds disclosed in the study by Reichert and Mathias included only one isomer of an adamantyl base compound due to design choices. Structure A shows this symmetry para-isomer 1,3,5,7-tetra [4 '-(phenylethynyl) phenyl] adamantane:

換句話說,Reichert和Mathias在其個人和共同的研究中期 待一種僅包括一個目標金剛烷基單體之異構物形式之有 用聚合物。然而,當形成並加工來自金剛烷基底單體之單 一異構物形式(對稱性’’全對位(all-para)"異構物)1,3,5,7-四 200424228 ⑹ 發明說明續頁 [4·-(苯基乙炔基)苯基]金剛烷時存在一個重要的問題。根 據 Reichert論文(在上方)和 Macromolecules,v〇1 27,(pp 7〇15_ 7034)(在上方)’ ”對稱性全對位異構物i,3,5,7^ [4,_(苯基乙 块基)苯基]金剛:fe "頃經發現充分溶於氯仿,能夠得到一 種H NMR光瑨。然而,頃發現取得次數對於得到一溶液% NMR光1晉是不實用的”表示全對位異構物具有低溶解度。 因此,Reichert對稱性,,全對位,,異構物[4,-(苯基乙 炔基)苯基]金剛烷不溶於標準有機溶劑中,因此,對於任 何需要溶解度或溶劑基底加工之應用(如流動塗佈、旋轉 塗佈或浸塗)將不是有用的。 在吾人2001年1〇月π日所申請共同讓與之待審中的專利 申請案PCT/US01/22204 (主張吾人共同讓與之待審中專利 申請案2000年4月7日申請之美國序號第09/545058號;2000 年7月19日申請之美國序號第09/618945號;2001年7月5日之 美國序號第09/897936號;2001年7月10日申請之美國序號第 09/902924號;及2001年1〇月18日公告之國際專利公告第WO 01/78 110號之本權利),吾等發現一種包括異構系熱固性單 體或一^聚物混合物之組合物,其中該混合物包括至少一種 具有對應結構之單體或二聚物:In other words, Reichert and Mathias, in their personal and joint research, are waiting for a useful polymer in the form of an isomer that includes only one target adamantyl monomer. However, when a single isomer form (symmetric "all-para " isomer) from an adamantyl base monomer is formed and processed 1,3,5,7-tetra 200424228 说明 Description of the invention There is an important problem in [4 ·-(phenylethynyl) phenyl] adamantane. According to Reichert's paper (above) and Macromolecules, v〇1 27, (pp 7015_ 7034) (above) '"symmetric all-para-isomer i, 3,5,7 ^ [4, _ (benzene [Ethyl block] phenyl] diamond: Fe " are found to be sufficiently soluble in chloroform to obtain an H NMR spectrum. However, the number of times they are found to be unrealistic for obtaining a solution of% NMR spectrum is indicated. All para-isomers have low solubility. Therefore, the Reichert symmetry, all para, isomer [4,-(phenylethynyl) phenyl] adamantane is insoluble in standard organic solvents. Therefore, for any application that requires solubility or solvent-based processing ( (Such as flow coating, spin coating or dip coating) will not be useful. Patent application PCT / US01 / 22204 for which we applied for co-assignment on October 10, 2001 (U.S. serial number for the pending patent application which we have co-assigned for application on April 7, 2000 No. 09/545058; U.S. Serial No. 09/618945, filed on July 19, 2000; U.S. Serial No. 09 / 897,936, filed on July 5, 2001; U.S. Serial No. 09 /, filed on July 10, 2001 No. 902924; and the present right of International Patent Publication No. WO 01/78 110 published on October 18, 2001), we have found a composition comprising a heterogeneous thermosetting monomer or a polymer mixture, wherein The mixture includes at least one monomer or dimer having a corresponding structure:

其中Z是從蘢狀化合物和矽原子選擇;R、、R’2、R,3、R 200424228 ⑺ 發明說明續頁 、R’5和R’6係獨立地芳基、分枝芳基和亞芳 芳基、分枝芳基和亞芳基醚中至少一個具 R’7是芳基或經取代芳基。吾等亦揭示形成 合物的方法。此新穎異構熱固性單體或二聚 於作為微電子應用之介電材料,並溶於許多 酮。這些希望的性質使得此異構熱固性單體 物用以形成厚度約0.1微米至約1.0微米之薄 雖然技藝中已知各種不同的方法以降低 數,但是這些方法仍有缺點。因此,半導體 a)提供改良的組合物和方法以降低介電層的 提供具改良機械性質(如熱安定性、玻璃轉 度)之介電材料;和c)產生能夠溶劑合並旋 或層合材料上之熱固性化合物和介電材料< 發明摘要 應技藝的需要,吾等發展以下組合物。在 施例中,該組合物包括: (a)熱固性組份,其包括(1)視需要至少一種 基醚選擇;該 有乙炔基;且 此等熱固性混 物混合物有用 溶劑,如環己 或二聚物混合 膜是理想的。 材料的介電常 工業仍然需要 介電常數;b) 化溫度Tg和硬 轉塗佈於晶圓 一第一具體實 化學式I之單體Where Z is selected from fluorene-like compounds and silicon atoms; R ,, R'2, R, 3, R 200424228 说明 Description of the Invention Continued, R'5 and R'6 are independently aryl, branched aryl, and At least one of the arylaryl group, the branched aryl group, and the arylene ether having R′7 is an aryl group or a substituted aryl group. We also disclose methods for forming compounds. This novel isomeric thermosetting monomer or dimer is used as a dielectric material for microelectronic applications and is soluble in many ketones. These desirable properties make this isomeric thermosetting monomer useful for forming a thickness of about 0.1 micrometers to about 1.0 micrometers. Although various methods are known in the art to reduce the number, these methods still have disadvantages. Therefore, semiconductors a) provide improved compositions and methods to reduce the dielectric layer and provide dielectric materials with improved mechanical properties (such as thermal stability, glass rotation); and c) produce materials capable of solvating spin or laminated materials The above thermosetting compounds and dielectric materials < Abstract of the Invention In response to technical needs, we have developed the following compositions. In an embodiment, the composition includes: (a) a thermosetting component, which includes (1) at least one base ether option as needed; the acetylene group; and a useful solvent for these thermosetting mixture mixtures, such as cyclohexane or Polymer mixed films are desirable. The dielectric constant of the material The industry still needs the dielectric constant; b) the temperature Tg and the hard transfer coating on the wafer a first concrete monomer of formula I

QQ

和(2)至少一種化學式II之寡聚物或聚合物 -14- 200424228 ⑻ 發明說明續頁And (2) at least one oligomer or polymer of formula II -14- 200424228 说明 Description of the invention continued on

-15- 200424228 (9) 發明說明續頁 其中E是一種籠狀化合物(以下所定義);各Q是相同或不同 ’並從氫、芳基、分枝芳基和經取代芳基選擇(其中該取 代基包括氫、齒素、烷基、芳基、經取代芳基、雜芳基、 芳基醚、埽基、块基、烷氧基、羥烷基、羥芳基、羥埽基 、羥炔基、羥基或羧基);Gw是芳基或經取代芳基(其中取 代基包括鹵素和烷基);h是〇至10 ; i是0至10 ; j是0至10 ; 且w是0或1 ; (b)包括具有至少雙官能度之化合物的黏性促進劑,其 中該雙官能度可以是相同或不同,當組合物應用於基材時 ’第一官能度能夠與熱固性組份(a)交互作用,且第二官 月色度能夠與基材交互作用。 咸瞭解,當在化學式II中w是0時,二個籠狀化合物是直 接鍵結。對於其上接附至少一個Q的各E而言,較佳E不具 有一個以上Q是氫,更佳E不具有Q是氫。當Q是經取代芳 寺 更佳遠方基是被缔基和決基取代。最佳的Q基包括 (冬基乙玦基)苯基、雙(笨基乙炔基)苯基、苯基乙炔基(苯 块:基)私基和(苯基乙決基)苯基苯基部份。〇的較佳芳 土匕括苯基、聯苯基和三苯基。更佳的G基是苯基。最好 w是1 〇 最好忒熱固性組份⑷包括:(1)至少一個化學式ΙΠ之金 剛烷單體 200424228 (ίο) 發明說明績頁 和(2)至少一個化學式IV之金剛烷的寡聚物或聚合物-15- 200424228 (9) Description of the invention continued page where E is a cage compound (defined below); each Q is the same or different 'and is selected from hydrogen, aryl, branched aryl and substituted aryl (where The substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, block, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxymethyl, Hydroxyalkynyl, hydroxy, or carboxyl); Gw is aryl or substituted aryl (where substituents include halogen and alkyl); h is 0 to 10; i is 0 to 10; j is 0 to 10; and w is 0 or 1; (b) a viscosity promoter comprising a compound having at least bifunctionality, wherein the bifunctionality may be the same or different, when the composition is applied to a substrate, the 'first functionality can be compatible with the thermosetting component (A) Interaction, and the second official moon color can interact with the substrate. It is understood that when w is 0 in Chemical Formula II, the two cage compounds are directly bonded. For each E to which at least one Q is attached, preferably E does not have more than one Q being hydrogen, and more preferably E does not have Q being hydrogen. When Q is substituted Fang Si is more preferably a distant group substituted by an alkenyl group and a decyl group. The most preferred Q groups include (Derylethenyl) phenyl, bis (benzylethynyl) phenyl, phenylethynyl (phenyl block: yl), and (phenylethoxy) phenylphenyl Part. The preferred aromatics include phenyl, biphenyl and triphenyl. A more preferred G group is phenyl. Preferably, w is 10, and preferably, the thermosetting component includes: (1) at least one adamantane monomer of formula III 200424228 (ίο) Summary sheet and (2) at least one adamantane oligomer of formula IV Or polymer

或者(1)至少一個化學式V之金剛烷單體Or (1) at least one adamantane monomer of formula V

QQ

和(2)至少一個化學式VI金剛烷的寡聚物或聚合物, -17- 200424228 (ii) 發明說明續頁And (2) at least one oligomer or polymer of the adamantane of formula VI, -17- 200424228 (ii) description of the invention continued page

其中Q、Gw、h、i、j和W是如先前所定義。Where Q, Gw, h, i, j, and W are as previously defined.

最好該熱固性組份⑷包括:(1)至少一個化學式VIIAPreferably, the thermosetting component ⑷ includes: (1) at least one chemical formula VIIA

、化學式VIIB -18 - 200424228 (12) 發明說明續頁Chemical formula VIIB -18-200424228 (12) Description of the invention continued

、化學式VIICChemical formula VIIC

或化學式VIID之金剛烷單體Or adamantane monomer of formula VIID

ΗΗ

和(2)至少一個化學式VIII之寡聚物或聚合物, -19- 200424228 (13) 發明說明續頁And (2) at least one oligomer or polymer of formula VIII, -19- 200424228 (13) description of the invention continued on

-20- 200424228 (14) 發明說明續頁-20- 200424228 (14) Description of the invention continued

-21 · 200424228 (15) 發明說明續頁-21 · 200424228 (15) Description of the invention continued

或(1)化學式IXAOr (1) Chemical formula IXA

、化學式IXBChemical formula IXB

、化學式IXC -22- 200424228 發明說明續頁 (16)、 Chemical formula IXC -22- 200424228 Description of the invention continued (16)

或化學式IXD之雙金剛烷單體Bisadamantane monomer of chemical formula IXD

及(2)至少一個化學式X之雙金剛烷單體的寡聚物或聚合 物。 -23- 200424228 (17) 發明說明續頁And (2) an oligomer or polymer of at least one bisadamantane monomer of formula X. -23- 200424228 (17) Description of the invention continued

-24- 200424228-24- 200424228

-25- 200424228 (19) 發明說明績頁 其中h是0至10 ; i是0至10 ; j是0至10 ;在化學式viIA、VIIB 、VIIC、VIID、VIII、IXA、IXB、IXC、IXD和 X中各 & 是相 同或不同,並從氫、函素、烷基、芳基、經取代芳基、雜 芳基、芳基醚、晞基、块基、垸氧基、輕燒基、經芳基、 #呈晞基、經決基、藉基或複基選擇;在化學式VIIA、VIIB 、VIIC、VIID、VIII、IXA、IXB、IXC和 IXD 中各 X和 γ 是相 同或不同,並從氫、烷基、芳基、經取代芳基或自素選擇 ,和(b)如上所述之黏性促進劑。 化學式II、IV、VI、VIII和X表示無規或不規則結構,其 中任一單元h、i和j可以在存在另一單元出現前重複多次或 否。因此,在以上化學式Π、IV、VI、VIII和X中單元序列 是無規或不規則。 在黏性促進劑(b)中,最好第一官能度和第二官能度中 至少一個是從含Si基、含n基、含C-0基、羥基及含C=0基 中選擇。該含Si基較佳是從Si-H、Si-Ο及Si-N選擇;含N基 是從例如C-NH2或其它二級及三級胺、亞胺、醯胺和醯亞 胺選擇;含C-0基是從=c〇、羰基(如酮和醛)、酯、-COOH 、具有1至5個碳原子之烷氧基、醚類、縮水甘油醚及環氧 基選擇;該#生基是歡;且含c==c基是從晞丙基和乙晞基選 擇。 在黏性促進劑(b)中,較佳該含si基選自化學式XI之矽烷 (R2)k(R3)lSl(R4)m(R5)n (其中 r2、R3、R4和 R5各自獨立表示氫 、羥基、不飽和或飽和燒基、經取代或未經取代之烷基, 其中該取代基是胺基或環氧基、不飽和或飽和烷氧基、不 -26- 200424228 (20) 發明說明續頁 飽和或飽和羧基或芳基,且R2、R3、化4和R5中至少二個表 示氫、羥基、飽和或不飽和烷氧基、不飽和烷基或不飽和 羧基,且k+l+m+nS4)或化學式XII之聚羰矽烷: Η " 1 -Si-|^一 is ς; Rj3 1 J j Γ?1 〜Si —Ri5 一 R? 1 r9 1 〇Rji R14 一 P — — q ^ MM r (其中R6、尺12和Rl5各自獨立表示經取代或未經取代之彳申婉* 基、環伸燒基、伸乙晞基、伸晞丙基或亞芳基,R7 、R9、R1G、R13及R14各自獨立表示氫原子、烷基、伸祝基 、乙晞基、環烷基、晞丙基、芳基或亞芳基且可以是線4生 或分枝;Rn表示有機矽、矽烷基、矽氧基或有機基圈’ 且 p、q、r及 s滿足[4Sp+q+r+s<100,000]的條件,且 q及 S 可以集體或各自是零); 該含C-0基是從縮水甘油醚或含至少一個羧酸基之不叙" φ 和羧酸的酯類選擇; 該含OC基是乙烯基環族寡聚物或聚合物,其中該族組 基是吡啶、芳香族或雜芳香族;且 該羥基是化學式XIII之酚醛樹脂或寡聚物· - -[R16C6H2(OH)(R17)]「,其中R16是經取代或未經取代之件、悦 基、環伸烷基、乙晞基、埽丙基或芳基,R17是跪基、仲 烷基、伸乙締基、環伸烷基、伸晞丙基或芳基,且3-100 ° 在另一具體實施例中,本組合物包括:(a)熱固性組份 -27- 200424228 (21) 發明說明續頁 ,其包括至少一個以上化學式II之寡聚物或聚合物,其中 E、(^和Gw是如先前所定義般;h是0至10 ; i是0至10 ; j是0 至10 ;且w是0或1 ;及(b)包括具有至少雙官能度之化合物 的黏性促進劑,其中該雙官能度可以是相同或不同,當組 合物應用於基材時,第一官能度能夠與熱固性組份(a)交 互作用,且第二官能度能夠與基材交互作用。在黏性促進 劑(b)中,最好第一官能度和第二官能度中至少一個是從 含Si基、含N基、含C-0基、羥基及含C=C基中選擇。本組 合物較佳包括至少一個以上化學式IV (其中Q、Gw、h、i 、』和w係如先前所定義般)之寡聚物或聚合物中。 吾等亦發展一種改良熱固性組份(其包括(1)至少一種以 上化學式I之單體及(2)至少一種以上化學式II之寡聚物或 聚合物,其中Q、Gw、h、i、j和w係如先前所定義般)於基 材之黏性的方法,包括步驟為: 於該熱固性組份添加黏性促進劑,該促進劑包括具有至 少雙官能度之化合物,其中該雙官能度可以是相同或不同 ,第一官能度能夠與熱固性組份交互作用,且第二官能度 能夠與基材交互作用而形成一種組合物;以及 將該組合物應用於基材。在黏性促進劑(b)中,最好第 一官能度和第二官能度中至少一個是從含Si基、含N基、 含C-0基、羥基及含C=C基中選擇。 同時,吾等亦發展一種包括以下步驟之方法:結合(a) 包括至少一個以上化學式I之單體和(2)至少一個以上化學 式II之寡聚物或聚合物(其中Q、Gw、h、i、j和w係如先前 -28- 200424228 (22) 發明說明續頁 戶斤定義般)之熱固性組份及(b)包括至少雙官能度之化合物 之黏性促進劑(其中該雙官能度可以是相同或不同,且當 組合物應用於基材時,第一 ·官能度能夠與熱固性組份(a)-25- 200424228 (19) Description sheet of the invention where h is 0 to 10; i is 0 to 10; j is 0 to 10; in the formulas VIIA, VIIB, VIIC, VIID, VIII, IXA, IXB, IXC, IXD and Each & in X is the same or different, and is selected from hydrogen, halo, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, bulk, fluorenyl, alkoxy, Select by aryl, # present as fluorenyl, decyl, boryl or compound; in the formula VIIA, VIIB, VIIC, VIID, VIII, IXA, IXB, IXC and IXD, each X and γ are the same or different, and Select from hydrogen, alkyl, aryl, substituted aryl or autogen, and (b) the viscosity promoter as described above. Chemical formulae II, IV, VI, VIII and X represent random or irregular structures in which any unit h, i and j can be repeated multiple times or not before the presence of another unit. Therefore, the unit sequences in the above formulae II, IV, VI, VIII, and X are random or irregular. In the adhesion promoter (b), it is preferable that at least one of the first functionality and the second functionality is selected from the group consisting of Si group, n group, C-0 group, hydroxyl group, and C = 0 group. The Si-containing group is preferably selected from Si-H, Si-O, and Si-N; the N-containing group is selected from, for example, C-NH2 or other secondary and tertiary amines, imines, amidines, and amidines; C-0-containing groups are selected from = co, carbonyl (such as ketones and aldehydes), esters, -COOH, alkoxy groups with 1 to 5 carbon atoms, ethers, glycidyl ether, and epoxy groups; the # The base is Huan; and the group containing c == c is selected from propyl and ethyl. In the adhesion promoter (b), it is preferred that the si-containing group is selected from the group consisting of silane (R2) k (R3) lSl (R4) m (R5) n (where r2, R3, R4, and R5 are independently represented Hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkyl, wherein the substituent is amine or epoxy, unsaturated or saturated alkoxy, not -26- 200424228 (20) invention Explain that the saturated or saturated carboxyl or aryl group on the following page, and at least two of R2, R3, H4, and R5 represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl or unsaturated carboxyl group, and k + 1 + m + nS4) or polycarbonylsilane of chemical formula XII: Η " 1 -Si- | ^ 一 is ς; Rj3 1 J j Γ? 1 ~ Si —Ri5 -R? 1 r9 1 〇Rji R14 -P — — q ^ MM r (wherein R6, R12, and R15 each independently represent a substituted or unsubstituted sulfenyl * group, a cycloalkylene group, an ethylene group, a propylene group or an arylene group, R7, R9 , R1G, R13, and R14 each independently represent a hydrogen atom, an alkyl group, an alkyl group, an ethenyl group, a cycloalkyl group, an amidino group, an aryl group, or an arylene group and may be a linear or branched branch; Rn represents an organic Silicon, silyl, Oxygen or organic radicals' and p, q, r and s satisfy the condition of [4Sp + q + r + s < 100,000], and q and S can be collective or zero respectively); the C-0-containing group is from Glycidyl ether or esters containing at least one carboxylic acid group " φ and carboxylic acid esters; the OC-containing group is a vinyl ring oligomer or polymer, where the group group is pyridine, aromatic Or heteroaromatic; and the hydroxyl group is a phenolic resin or oligomer of the formula XIII ·--[R16C6H2 (OH) (R17)] ", wherein R16 is a substituted or unsubstituted member, a pentyl group, a cycloalkane Group, ethenyl, propyl, or aryl, R17 is kynyl, secondary alkyl, ethylene, cycloalkylene, propyl or aryl, and 3-100 ° in another specific implementation In the example, the composition includes: (a) thermosetting component-27-200424228 (21) Description of the invention continued page, which includes at least one oligomer or polymer of formula II, wherein E, (^ and Gw are as As previously defined; h is 0 to 10; i is 0 to 10; j is 0 to 10; and w is 0 or 1; and (b) a viscosity promoter comprising a compound having at least bifunctionality, wherein the Bifunctional The degree can be the same or different. When the composition is applied to a substrate, the first functionality can interact with the thermosetting component (a), and the second functionality can interact with the substrate. In the adhesion promoter (b ), It is preferable that at least one of the first functionality and the second functionality is selected from Si-containing group, N-containing group, C-0-containing group, hydroxyl group and C = C group. The composition preferably includes at least one oligomer or polymer of formula IV (where Q, Gw, h, i, ′ and w are as previously defined). We have also developed an improved thermosetting component that includes (1) at least one monomer of formula I and (2) at least one oligomer or polymer of formula II, where Q, Gw, h, i, j And w are as previously defined) a method for the viscosity of a substrate, comprising the steps of: adding a viscosity accelerator to the thermosetting component, the accelerator comprising a compound having at least difunctionality, wherein the difunctionality It can be the same or different, the first functionality can interact with the thermosetting component, and the second functionality can interact with the substrate to form a composition; and the composition is applied to the substrate. In the adhesion promoter (b), it is preferable that at least one of the first functionality and the second functionality is selected from Si-containing group, N-containing group, C-0-containing group, hydroxyl group, and C = C group. At the same time, we have also developed a method comprising the following steps: combining (a) a monomer comprising at least one or more chemical formula I and (2) at least one oligomer or polymer of chemical formula II (where Q, Gw, h, i, j, and w are thermosetting components as defined in the previous -28-200424228 (22) description of the invention (continued on the following page) and (b) a viscosity promoter that includes at least a bifunctional compound (wherein the bifunctional It may be the same or different, and when the composition is applied to a substrate, the first functionality can be the same as that of the thermosetting component (a)

' I 容異锥,屏筹二官能度能夠與基材交互,作,用),在麩释 促進劑(b)中,最好第一官能度和第二官能度中至少一柄 是從含Si基、含N基、含C-0基、羥基及含C=C基中選擇。 此處’’結合”一詞包括摻合或反應。 本組合物較佳具有改良之溶解度。結果,從本組合物可 以產生厚度達約1.5微米或更多之薄膜。 從以下本發明較佳具體實施例之詳細敘述和圖式將更 顯而易見本發明的各種目標、特點、觀點和優點。 圖式簡單說明 圖1A至1F說明如何製造在本發明中有用於作為該(a)熱 固性組份之金剛燒基組合物。 圖2說明一個製造在本發明中有用於作為該(a)熱固性組 份之雙金剛烷基組合物的方法。 圖3A至3F說明另一個製造在本發明中有用於作為該(a) 熱固性組份之雙金剛烷基組合物的方法。 發明詳細敘述 此處使用之”籠狀結構”籠狀分子11及”籠狀化合物”係 打算交換使用並表示為一種具有至少8個原子之分子,該 原子之排列使得至少一橋聯共價連接環系統中二個或多 個原子。換言之,一籠狀結構、籠狀分子及籠狀化合物包 括許多由共價鍵結原子形成之環,其中該結構、分子或化 -29- 200424228 (23) 發明說明續頁 合物界定一種體積,使得一位於該體積内之點不能夠離開 該體積而不通過該環。該橋聯及/或環系統可以包括一個 或多個雜原子,且可以包含芳香族基、部份環族或非環族 飽和烴基,或環族或非環族不飽和烴基。進一步涵蓋之籠 狀結構包括具有至少一個橋聯之富勒晞(fullerene)及皇冠 醚。例如,一金剛烷或雙金剛烷經認定為一種籠狀結構, 然而在此定義的範疇下奈或芳族螺狀化合物並不被認定 為蘢狀結構,因為奈或螺狀化合物並不具有一個或多於一 個橋聯,所以並不在以上籠狀化合物的定義内。籠狀化合 物較佳是金剛统和雙金剛燒,金剛燒更佳。 此處使用”橋頭碳(bridgehead carbon)”係表示任何鍵結於 其它三個碳之籠狀結構碳。因此,例如,金剛烷具有四個 橋頭碳,而雙金剛烷具有八個橋頭碳。 此處使用之π黏性促進劑π表示任何組份,當添加於熱固 性組份(a)時,相較於僅熱固性組份(a),其改良其在基材 的黏性。 此處使用之”具有至少雙官能度之化合物” 一詞表示任 何具有至少二個能夠如下交互作用或反應或形成鍵結之 官能基。該官能基可以以許多方式反應,包括加成反應、 親核及親電子取代反應或脫除反應、自由基反應等等。更 多替代反應亦可以包括形成非共價鍵結,如凡得瓦爾(Van der Waals)、靜電鍵、離子鍵及氫鍵。 此處使用之’’層” 一詞包括薄膜和塗層。 此處使用之’f低介電常數聚合物” 一詞係表示一種介電 •30- 200424228'I Heteroconductor, screen chip difunctionality can interact with the substrate, function, use), in the bran release accelerator (b), it is preferred that at least one of the first functionality and the second functionality is from Si group, N group, C-0 group, hydroxyl group and C = C group are selected. Here, the term "combination" includes blending or reaction. The composition preferably has improved solubility. As a result, a thin film having a thickness of about 1.5 micrometers or more can be produced from the composition. The present invention is particularly preferred from the following. The detailed description and drawings of the embodiments will make the various objects, features, viewpoints, and advantages of the present invention more obvious. The drawings briefly illustrate FIGS. 1A to 1F illustrate how to manufacture the diamond used in the present invention as the (a) thermosetting component. The base composition. Fig. 2 illustrates a method for producing a bisadamantyl composition useful as the (a) thermosetting component in the present invention. Figs. 3A to 3F illustrate another manufacture useful in the present invention as the (A) Method of bisadamantane composition of thermosetting component. Detailed description of the invention The "cage structure" cage molecule 11 and "cage compound" used herein are intended to be used interchangeably and expressed as a type having at least 8 A molecule of atoms whose arrangement is such that at least one bridge covalently connects two or more atoms in the ring system. In other words, a cage structure, a cage molecule, and a cage compound package Includes many rings formed by covalently bonded atoms, where the structure, molecule, or compound-29-200424228 (23) Description of the Invention Continuation compounds define a volume such that a point within the volume cannot leave the volume without Does not pass through the ring. The bridging and / or ring system may include one or more heteroatoms, and may include aromatic groups, partially cyclic or acyclic saturated hydrocarbon groups, or cyclic or acyclic unsaturated hydrocarbon groups Further covered cage structures include fullerene and crown ether with at least one bridge. For example, monoamantane or bisadamantane is recognized as a cage structure, but in the scope of this definition, Aromatic spiro compounds are not recognized as fluorene-like structures, because the naphthalene or spiro compounds do not have one or more than one bridge, so they are not within the definition of cage compounds above. The cage compounds are preferably of the diamond type And double diamond firing, diamond firing is better. "Bridgehead carbon" is used here to mean any cage-like carbon bonded to the other three carbons. Therefore, for example, adamantane has four Bridgehead carbon, and bisadamantane has eight bridgehead carbons. The π viscosity promoter π used herein means any component. When added to the thermosetting component (a), compared to the thermosetting component (a) only, It improves its adhesion to the substrate. The term "compound having at least bifunctionality" as used herein means any functional group having at least two functional groups that can interact or react or form a bond as follows. The functional group can be Many types of reactions, including addition reactions, nucleophilic and electrophilic substitution reactions or removal reactions, free radical reactions, etc. More alternative reactions can also include the formation of non-covalent bonds, such as Van der Waals , Electrostatic, ionic, and hydrogen bonds. The term "layer" as used herein includes films and coatings. The term “f low dielectric constant polymer” as used herein refers to a dielectric • 30- 200424228

發明說明續頁 常數約3.0或更低之有機、有機金屬或無機聚合物。該低 介電材料典型上係被製造成厚度100至25,000埃(Angstrom) 之薄層形式,但亦可以以厚膜、大塊、圓筒、球體狀使用。 熱固4生、组份(a):DESCRIPTION OF THE INVENTION Continued Organic, organometallic or inorganic polymers having a constant of about 3.0 or less. The low-dielectric material is typically manufactured in a thin layer thickness of 100 to 25,000 Angstroms (Angstrom), but it can also be used as a thick film, bulk, cylinder, or sphere. Thermoset 4 raw, component (a):

熱固性組份(a)是在吾等2002年1月8日申請之一般頒布 之申請中專利申請案第60/347195號、2002年5月30曰申請之 第60/384303號及2003年1月3日申請之第IM06878號中揭示 ,將該案之全文以引用的方式併入本文中。 第一具體實施例:在上述第一具體實施例中,較佳熱固 性組份(a)包括至少一個以上化學式VIIA、VIIB、VIIC或VIID 之金剛烷單體,和至少一個以上化學式VIII之金剛烷寡聚 物或聚合物,其中h、i及j中至少一項是至少1。最好該熱 固性組份(a)包括以上化學式IXA、IXB、IXC和IXD之雙金剛 烷單體及至少一個以上化學式X之雙金剛烷寡聚物或聚 合物,其中h、i及j中至少一項是至少1。The thermosetting component (a) is a patent application No. 60/347195 in our generally issued application filed on January 8, 2002, No. 60/384303 filed on May 30, 2002, and January 2003 It is disclosed in the 3-day application No. IM06878 that the entire text of the case is incorporated herein by reference. First specific embodiment: In the first specific embodiment, the preferred thermosetting component (a) includes at least one adamantane monomer of formula VIIA, VIIB, VIIC or VIID, and at least one adamantane of formula VIII An oligomer or polymer, wherein at least one of h, i, and j is at least one. Preferably, the thermosetting component (a) includes the bisadamantane monomers of the above chemical formulas IXA, IXB, IXC and IXD and at least one bisadamantane oligomer or polymer of the chemical formula X, wherein at least h, i and j are at least One item is at least 1.

當在以上化學式IV中h、i及j全部是0時,該金剛烷二聚 物是如以下化學式XIV所示When h, i and j are all 0 in the above chemical formula IV, the adamantane dimer is as shown in the following chemical formula XIV

其中(^和Gw是如先前所定義般。當在化學式XIV中w是0時 ,金剛烷二聚物的實例係如下表2所示。 -31 - 200424228 (25) 發明說明續頁Where (^ and Gw are as previously defined. When w is 0 in Chemical Formula XIV, examples of adamantane dimers are shown in Table 2 below. -31-200424228 (25) Description of the invention continued page

-32- 200424228 (26) 發明說明續頁 當在化學式XIV中w較佳是1時,較佳之二聚物實例係如下 表3所示。 表3-32- 200424228 (26) Description of the Invention Continued When w is preferably 1 in Chemical Formula XIV, examples of preferred dimers are shown in Table 3 below. table 3

^ Ri γ ^γ γ γ-γ Ri 1 ^ γ r ? τ R1 Ri 4 i -ί *|1 4 4y H. r 4 i Ri / iy fY γ—Η Η 4 ^ H H 4 , Η Η H H H Y H -33- 200424228 (27) 發明說明續頁 當在以上化學式IV中h是1且i和j是〇時’該金剛燒三聚物 是如以下化學式XV所示般^ Ri γ ^ γ γ γ-γ Ri 1 ^ γ r? Τ R1 Ri 4 i -ί * | 1 4 4y H. r 4 i Ri / iy fY γ—Η Η 4 ^ HH 4, Η Η HHHYH -33 -200424228 (27) Description of the invention continued when h is 1 and i and j are 0 in the above chemical formula IV.

其中卩和Gw是如先前所定義般。當在化學式XV中w較佳是 時,較佳三聚物的實例係如下表4所示。 表4Where 卩 and Gw are as previously defined. When w is preferably in the chemical formula XV, examples of preferred trimers are shown in Table 4 below. Table 4

-34- 200424228 (28) 發明說明續頁-34- 200424228 (28) Description of the invention continued

-35- 200424228 (29) 發明說明續頁-35- 200424228 (29) Description of the invention continued

-36- 200424228 (30) 發明說明續頁-36- 200424228 (30) Description of the invention continued

•37- 200424228 (31) 發明說明續頁• 37- 200424228 (31) Description of the invention continued

-38- 200424228 (32) 發明說明續頁-38- 200424228 (32) Description of the invention continued

-39- 200424228 _ (33) 發明說明續頁-39- 200424228 _ (33) Description of the invention continued

-40- 200424228 (34) I發明說明續頁-40- 200424228 (34) I Description of Inventions Continued

本組合物較佳包括至少一個以上化學式VI之寡聚物或 聚合物’其中Q、Gw、h、i、j和w是如先前所定義般。當 以上化學式VI中h、i及j全部是〇時,該雙金剛烷二聚物是 如以下化學式XVI所示The composition preferably includes at least one oligomer or polymer of Formula VI 'wherein Q, Gw, h, i, j and w are as previously defined. When h, i and j are all 0 in the above chemical formula VI, the bisdamantane dimer is as shown in the following chemical formula XVI

Q QQ Q

其中(^和Gw是如先前所定義般。 本組合物較佳包括至少一個以上化學式VIII之寡聚物或 聚合物,其中Ri、Y、h、i、j和w是如先前所定義般。本 -41 - 200424228 (35) 發明說明續頁 組合物較佳包括至少一個以上化學式X之雙金剛烷寡聚 物或聚合物,其中R、Y、h、i、j和w是如先前所定義般。 熱固性組份(a)較佳包括以上化學式VIIA、VIIB、VIIC或 VIID之金剛烷單體和以下化學式XVII之金剛烷寡聚物或 聚合物,其中Ri、Y和w是如先前所定義般,且h是0或1。Where ^ and Gw are as previously defined. The composition preferably includes at least one oligomer or polymer of formula VIII, wherein Ri, Y, h, i, j, and w are as previously defined. Ben-41-200424228 (35) Description of the invention The continuation composition preferably includes at least one bisadamantane oligomer or polymer of formula X, wherein R, Y, h, i, j and w are as previously defined The thermosetting component (a) preferably includes the adamantane monomer of the above chemical formula VIIA, VIIB, VIIC or VIID and the adamantane oligomer or polymer of the following chemical formula XVII, wherein Ri, Y and w are as previously defined And h is 0 or 1.

最好該金剛烷結構是如以下化學式所示般Preferably, the adamantane structure is as shown in the following chemical formula

熱固性組份(a)較佳包括以上化學式IXA、IXB、IXC或IXD 之雙金剛烷單體和以下化學式XVIII之雙金剛烷寡聚物或 聚合物,其中Ri、Y和w是如先前所定義般,且h是0或1。 -42- 200424228 發明說明續頁 (36)The thermosetting component (a) preferably includes the bisadamantane monomer of the above chemical formula IXA, IXB, IXC or IXD and the bisadamantane oligomer or polymer of the following chemical formula XVIII, wherein Ri, Y and w are as previously defined Generally, and h is 0 or 1. -42- 200424228 Description of Invention Continued (36)

最好該雙金剛烷結構是如以下化學式所示般Preferably, the bisadamantane structure is as shown in the following chemical formula

熱固性組份(a)較佳包括以上化學式VIIA、VIIB、VIIC或 VIID之金剛烷單體和以下化學式XIX之金剛烷二聚物,其 中Ri、Y和w是如先前所定義般。 -43- 200424228 (37) 發明說明續頁The thermosetting component (a) preferably includes the adamantane monomer of the above chemical formula VIIA, VIIB, VIIC or VIID and the adamantane dimer of the following chemical formula XIX, wherein Ri, Y and w are as previously defined. -43- 200424228 (37) Description of the invention continued

熱固性組份(a)較佳包括以上化學式IXA、IXB、IXC或IXD 之雙金剛烷單體和以下化學式XX之雙金剛烷二聚物,其 中Ri、Y和w是如先前所定義般。The thermosetting component (a) preferably includes the bisadamantane monomer of the above chemical formula IXA, IXB, IXC or IXD and the bisadamantane dimer of the following chemical formula XX, wherein Ri, Y and w are as previously defined.

-44- 200424228 (38) 發明說明續頁 最好該雙金剛烷二聚物是如以下化學式所示般-44- 200424228 (38) Description of the Invention Continued It is preferable that the bisdamantane dimer is as shown in the following chemical formula

吾人應該瞭解在以上表2、3及4中列示型態之取代基亦 可以在四聚物及更高寡聚物中發生。 熱固性組份(a)較佳包括以上化學式VIIA、VIIB、VIIC或 VIID之金剛烷單體和以下化學式XXI之金剛烷三聚物,其 中Ri、Y和w是如先前所定義般。I should understand that the substituents of the types listed in Tables 2, 3 and 4 above can also occur in tetramers and higher oligomers. The thermosetting component (a) preferably includes the adamantane monomer of the above chemical formula VIIA, VIIB, VIIC or VIID and the adamantane trimer of the following chemical formula XXI, wherein Ri, Y and w are as previously defined.

最好該金剛烷三聚物是如以下化學式所示般 -45- 200424228 發明說明續頁 (39)Preferably, the adamantane trimer is as shown in the following chemical formula -45- 200424228 Description of the invention continued (39)

之雙金剛烷單體和以下化學式XXII之雙金剛烷三聚物,其 中Ri、Y和w是如先前所定義般。The bisadamantane monomer and the bisadamantane trimer of the following chemical formula XXII, wherein Ri, Y and w are as previously defined.

-46- 200424228 (40) 發明說明續頁 熱固性組份(a)較佳包括以上化學式VIIA、VIIB、VIIC或 VIID之金剛烷單體、以上化學式XIX之金剛烷二聚物和至 少一項以上化學式VIII之金剛烷寡聚物或聚合物,其中h 、1和j中至少一項是至少1。熱固性組份(a)較佳包括以上 化學式IXA、IXB、IXC或IXD之雙金剛烷單體、以上化學式 XX之雙金剛烷二聚物和至少一項以上化學式X之雙金剛 燒寡聚物或聚合物,其中h、i和j中至少一項是至少1。 熱固性組份(a)較佳包括以上化學式VIIA、VIIB、VIIC或 VIID之金剛烷單體、以上化學式XIX之金剛烷二聚物、以 上化學式XXI之金剛烷三聚物和至少一項以上化學式VIII 之金剛烷寡聚物或聚合物,其中h、i和j中至少一項是至少 卜熱固性組份(a)較佳包括以上化學式IXA、IXB、IXC或IXD 之雙金剛烷單體、以上化學式XX之雙金剛烷二聚物、以 上化學式XXII之雙金剛烷三聚物和至少一項以上化學式X 之雙金剛烷寡聚物或聚合物,其中h、i和j中至少一項是至 少1。 熱固性組份(a)包括化學式VIIA、VIIB、VIIC或VIID之金 剛烷單體(其是一種四取代金剛烷)或化學式IXA、IXB、IXC 或IXD之雙金剛烷單體(其是一種四取代雙金剛烷)。較佳 的單體是化學式VIIA之金剛烷單體。該金剛烷網路在位置 1、3、5及7各帶有一經取代芳基。具化學式VIII之化合物 係一種經由未取代及/或經取代芳基單元鍵聯,屬化學式 VIIA、VIIB、VIIC或VIID之金剛烷單體的寡聚物或聚合物 。具化學式X之化合物係一種經由未取代及/或經取代芳基 -47- 200424228 (41) 發明說明績頁 單元鍵聯,屬化學式IXA、IXB、IXC或IXD之雙金剛烷單體 的寡聚物或聚合物。通常h、i和j是整數0至10(較佳0至5, 更佳0至2)。因而最簡單的金剛烷寡聚物是以上化學式XIX 所示之二聚物(在化學式VIII中h是0,i是0,且j是0),其中 二個金剛燒網路是經由一未經取代或經取代之芳基單元 鍵聯。因而最簡單的雙金剛烷寡聚物是以上化學式XX所 示之二聚物(在化學式X中h是0,i是0,且j是0),其中二個 雙金剛烷網路是經由一未經取代或經取代之芳基單元鍵 聯。 第二具體實施例··在上述第二具體實施例中,最好熱固 性組份(a)包括至少一個以上化學式VIII之金剛烷寡聚物 或聚合物,其中h是0至10,i是0至10,j是0至10且w是0或1 。最好本熱固性組份(a)包括至少一個以上化學式X之雙金 剛烷寡聚物或聚合物,其中h是0至10,i是0至10,j是0至10 且w是0或1。 最好該熱固性組份(a)包括至少一個以上化學式VIII之 雙金剛燒寡聚物或聚合物,其中h是0或1,i是0,j是0且w 是0或1。此金剛烷結構是如以上化學式XVII所示般。 最好該熱固性組份(a)包括至少一個以上化學式X之雙 金剛燒寡聚物或聚合物,其中h是0或1,i是0,j是0且w是0 或1。此金剛烷結構是如以上化學式XVIII所示般。 最好該熱固性組份(a)包括至少一個以上化學式VIII之 金剛垸寡聚物或聚合物,其中h是0,i是0,j是0且w是0或1 。此金剛烷二聚物是如以上化學式XIX所示般。 -48- 200424228 (42) 發明說明續頁 最好該熱固性組份(a)包括至少一個以上化學式X之雙 金剛燒寡聚物或聚合物,其中h是0,i是0,j是0且w是0或1 。此雙金剛烷結構是如以上化學式XX所示般。 最好該熱固性組份(a)包括至少一個以上化學式VIII之 , 金剛烷寡聚物或聚合物,其中h是1,i是0,j是0且w是0或1 。此金剛烷三聚物是如以上化學式XXI所示般。 / 最好該熱固性組份(a)包括至少一個以上化學式X之雙 · 金剛燒寡聚物或聚合物,其中h是1,i是0,j是0且w是0或1 0 。此金剛烷結構是如以上化學式XXII所示般。 最好該熱固性組份(a)包括一種至少一個以上化學式 VIII之金剛烷寡聚物或聚合物之混合物,其中h是2,i是0 且j是0 (線性寡聚物或聚合物)且h是0,i是1且j是0 (分枝寡 聚物或聚合物)。因此,本組合物包括一種如以下化學式 XXIII所示般金岡丨J烷線性四聚體之混合物,其中I、Y及W 係如上所定義般。-46- 200424228 (40) Description of the invention Continuation sheet Thermosetting component (a) preferably includes the adamantane monomer of the above chemical formula VIIA, VIIB, VIIC or VIID, the adamantane dimer of the above chemical formula XIX and at least one chemical formula The adamantane oligomer or polymer of VIII, wherein at least one of h, 1 and j is at least 1. The thermosetting component (a) preferably includes the bisdamantane monomer of the above chemical formula IXA, IXB, IXC or IXD, the bisdamantane dimer of the above chemical formula XX, and at least one bisdamantane oligomer of the chemical formula X or A polymer in which at least one of h, i, and j is at least one. The thermosetting component (a) preferably includes the adamantane monomer of the above chemical formula VIIA, VIIB, VIIC or VIID, the adamantane dimer of the above chemical formula XIX, the adamantane trimer of the above chemical formula XXI, and at least one of the above chemical formula VIII Adamantane oligomer or polymer, wherein at least one of h, i and j is at least a thermosetting component (a) preferably includes a bisadamantane monomer of the above chemical formula IXA, IXB, IXC or IXD, the above chemical formula Bis-adamantane dimer of XX, bis-adamantane trimer of the above chemical formula XXII and at least one bis-adamantane oligomer or polymer of the formula X, wherein at least one of h, i and j is at least 1 . Thermosetting component (a) includes an adamantane monomer of the formula VIIA, VIIB, VIIC or VIID (which is a tetra-substituted adamantane) or a bisadamantane monomer of the formula IXA, IXB, IXC or IHD (which is a tetra-substituted Bis-adamantane). The preferred monomer is the adamantane monomer of formula VIIA. The adamantane network carries a substituted aryl group at positions 1, 3, 5 and 7 each. A compound of formula VIII is an oligomer or polymer which is linked via unsubstituted and / or substituted aryl units and is an adamantane monomer of formula VIIA, VIIB, VIIC or VIID. The compound of formula X is an oligomerization of a bisadamantane monomer of formula IXA, IXB, IXC or IXD via unsubstituted and / or substituted aryl-47- 200424228 (41) Substance or polymer. Usually h, i and j are integers 0 to 10 (preferably 0 to 5, more preferably 0 to 2). Therefore, the simplest adamantane oligomer is the dimer shown in the above chemical formula XIX (in chemical formula VIII, h is 0, i is 0, and j is 0), in which two diamond networks are Substituted or substituted aryl units are linked. Therefore, the simplest bisdamantane oligomer is the dimer shown in the above chemical formula XX (in chemical formula X, h is 0, i is 0, and j is 0), in which two bisadamantane networks pass through a Unsubstituted or substituted aryl units are linked. Second Specific Embodiment ... In the second specific embodiment described above, it is preferable that the thermosetting component (a) includes at least one adamantane oligomer or polymer of formula VIII, where h is 0 to 10 and i is 0. To 10, j is 0 to 10 and w is 0 or 1. Preferably the present thermosetting component (a) comprises at least one bisadamantane oligomer or polymer of formula X, where h is 0 to 10, i is 0 to 10, j is 0 to 10 and w is 0 or 1 . Preferably, the thermosetting component (a) includes at least one bis-adamantine oligomer or polymer of formula VIII, wherein h is 0 or 1, i is 0, j is 0, and w is 0 or 1. This adamantane structure is as shown in the above Chemical Formula XVII. Preferably, the thermosetting component (a) includes at least one bis-adamantine oligomer or polymer of formula X, wherein h is 0 or 1, i is 0, j is 0, and w is 0 or 1. This adamantane structure is as shown in the above Chemical Formula XVIII. Preferably, the thermosetting component (a) includes at least one diamond oligomer or polymer of formula VIII, wherein h is 0, i is 0, j is 0, and w is 0 or 1. This adamantane dimer is as shown in the above Chemical Formula XIX. -48- 200424228 (42) Description of the invention Continuation page It is preferred that the thermosetting component (a) includes at least one bisdamantene oligomer or polymer of formula X, where h is 0, i is 0, j is 0 and w is 0 or 1. This bisdamantane structure is as shown in the above Chemical Formula XX. Preferably, the thermosetting component (a) includes at least one of the adamantane oligomer or polymer of formula VIII, wherein h is 1, i is 0, j is 0, and w is 0 or 1. This adamantane trimer is as shown in the above Chemical Formula XXI. / Preferably, the thermosetting component (a) includes at least one bis-adamantine oligomer or polymer of formula X, where h is 1, i is 0, j is 0, and w is 0 or 1 0. This adamantane structure is as shown in the above chemical formula XXII. Preferably the thermosetting component (a) comprises a mixture of at least one adamantane oligomer or polymer of formula VIII, where h is 2, i is 0 and j is 0 (linear oligomer or polymer) and h is 0, i is 1 and j is 0 (branched oligomer or polymer). Therefore, the composition includes a mixture of Jingang-Jane linear tetramers as shown in the following chemical formula XXIII, wherein I, Y and W are as defined above.

及較佳以下化學式之線性金剛烷四聚體 -49- 200424228 (43) 發明說明續頁And preferably linear adamantane tetramers of the following chemical formula -49- 200424228 (43) Description of the invention continued page

和以下化學式χχιν所示般金剛烷分枝四聚體And the amantadine branched tetramer shown by the following chemical formula χχιν

和較佳以下化學式之分枝金剛虎四聚體And preferably branched Vajra tetramers

-50- 200424228 發明說明續頁 (44)-50- 200424228 Description of Invention Continued (44)

-51 - 200424228 (45) 發明說明續頁-51-200424228 (45) Description of the invention continued

22

和以下化學式XXVI所示般雙金剛烷分枝四聚體Bisdamantane branched tetramer as shown in the following chemical formula XXVI

R R RR R R

和較佳以下化學式所示之分枝雙金剛烷四聚體 -52- 200424228 (46) 發明說明續頁And preferably a branched bisdamantane tetramer represented by the following chemical formula -52- 200424228 (46) Description of the invention continued page

較佳熱固性組份(a)包含以上化學式XIX之金剛烷二聚 物和以上化學式XXI之金剛烷三聚物。較佳熱固性組份(a) 包括以上化學式XX之雙金剛烷二聚物和以上化學式XXII 之雙金剛烷三聚物。The preferred thermosetting component (a) comprises the adamantane dimer of the above chemical formula XIX and the adamantane trimer of the above chemical formula XXI. The preferred thermosetting component (a) includes the bisdamantane dimer of the above chemical formula XX and the bisadamantane trimer of the above chemical formula XXII.

較佳熱固性組份(a)包括以上化學式XIX之金剛烷二聚 物和至少一個以上化學式VIII之金剛烷寡聚物或聚合物 ,其中h是0,i是至少1,且j是0。較佳熱固性組份(a)包括 以上化學式XX之雙金剛烷二聚物和至少一個以上化學式 X之雙金剛烷寡聚物或聚合物,其中h是0,i是至少1,且j 是0。 在該二具體實施例中,對於以上化學式I和II而言,較佳之 Q基包括芳基和被烯基和炔基取代之芳基,更佳之Q基包括 (冬基乙決基)豕基、木基乙決基(苯基乙決基)苯基和(苯基 -53- 200424228 (47) 發明說明續頁 乙炔基)苯基苯基部份。G之較佳芳基包括苯基、聯苯基和 三苯基。更佳的G基是苯基。 在接附於R!三C-型金剛烷或雙金剛烷環之苯環上經取 代乙炔基的個別反應基Ri在以上化學式VIIA、VIIB、VIIC 、VIID、VIII、IXA、IXB、IXC、IXD、X、XVII、XVIII、XIX 、XX、XXI、XXII、XXIII、XXIV、XXV和 XXVI和以下的 XXVII 和XXVIII各例中是相同或不同。Ri是從氫、鹵素、烷基、 芳基、經取代之芳基、雜芳基、芳基醚、晞基、炔基、烷 氧基、輕烷基、輕芳基、經缔基、經炔基、經基或叛基選 擇。各Ri可以是未分枝或分枝且未經取代或經取代,且該 取代基可以是未分枝或分枝。最好該烷基、晞基、炔基、 烷氧基、羥烷基、羥烯基和羥炔基包含約2至約10個碳原 子,且該芳基、芳基醚和羥芳基包含約6至約18個碳原子 。倘若1代表芳基,則I較佳是苯基。最好苯基上的R/C 基中至少二個是二個不同的異構物。至少二個不同異構物 的實例包括間-、對-和鄰-異構物。最好該至少二個不同 的異構物是間-和對-異構物。在該較佳單體1,3,5,7-四 [374’-(苯基乙炔基)苯基]金剛烷(於圖1D中表示)中,形成 五種異構物:(1)對-,對-,對-,對-;(2)對-,對-,對-, 間_ ; (3)對-,對-,間-,間· ;(4)對-,間-,間-,間-和(5) 間-,間-,間-,間-。. 在以上化學式 VIIA、VIIB、VIIC、VIID、VIII、IXA、IXB 、IXC、IXD、X、XVII、XVIII、XIX、XX、XXI、XXII、XXIII 、XXIV、XXV和XXVI和以下XXVII和XXVIII各例中各苯環 -54- 200424228 (48) I發明說明續ί 之γ是相同或不同’且是從氫、烷基、芳基、經取代芳基 或鹵素選擇。當Υ是芳基時,芳基的實例包括苯基或聯苯 基。Υ較佳是從氫、苯基和聯苯基選擇,氫更佳。在金剛 烷或雙金剛烷的二個橋聯碳間之苯基中至少一個是以至 少二個不同異構物狀態存在。至少二個不同異構物的實例 包括間對-和鄰-異構物。最好該至少二個異構物是間_和 對-異構物。在最佳的二聚物L3/4-雙{1,,3,,5,-參[3”/4”-(苯基 乙炔基)苯基]金剛烷-7,-基}苯(於圖1F中表)中,如下形成 14個異構物。最好位於金剛烷的二個橋頭碳間的苯基是以 間-和對-異構物狀態存在。關於每一個該二前述異構物而 言,七個苯基上RlCsC的七個異構物係如下形成:(1)對_ ,對-,對-,對-,對_,對_ ; (2)對_,對_對_,對_,對-,間(3)對·,對_,對·,對·,間間·;(4)對·,對_, 對-,間-,間-,間-;(5)對·,對_,間·,間·,間·,間·; (6)對-,間-,間_,間·,間·,間-和(7)間·,間_ ,間_,間· ,間-,間-。 除了以上化學式乂沿乂的分枝金剛烷結構之外,吾人應 該暸解當h是〇,i是〇,j是1且〜是0或1時,以上化學式νΙπ 表示如以下化學式XXVII所示般更進一步的分枝。吾人應 該瞭解’因為化學式XXVII中懸掛金剛烷單元進一步的分 枝亦可以發生,所以分枝可以超越化學式XXVII結構。 -55- 200424228 (49) 發明說明續頁The preferred thermosetting component (a) includes the adamantane dimer of the above formula XIX and at least one adamantane oligomer or polymer of the formula VIII, wherein h is 0, i is at least 1, and j is 0. The preferred thermosetting component (a) includes the bisadamantane dimer of the above chemical formula XX and at least one bisadamantane oligomer or polymer of the chemical formula X, wherein h is 0, i is at least 1, and j is 0. . In these two specific embodiments, for the above chemical formulae I and II, the preferred Q group includes an aryl group and an aryl group substituted with an alkenyl group and an alkynyl group, and a more preferred Q group includes a (decylethyl) fluorenyl group , Xylyl (phenylethlyl) phenyl, and (phenyl-53-200424228 (47) Description of the invention continued on ethynyl) phenylphenyl moiety. Preferred aryl groups for G include phenyl, biphenyl, and triphenyl. A more preferred G group is phenyl. Individual reactive groups Ri substituted with acetylene on the benzene ring attached to the R! Tri-C-adamantane or bis-adamantane ring are in the above chemical formula VIIA, VIIB, VIIC, VIID, VIII, IXA, IXB, IXC, IXD , X, XVII, XVIII, XIX, XX, XXI, XXII, XXIII, XXIV, XXV, and XXVI and the following XXVII and XXVIII are the same or different in each case. Ri is selected from hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, alkynyl, alkoxy, light alkyl, light aryl, vial, via Choice of alkynyl, mesityl, or benzyl. Each Ri may be unbranched or branched and unsubstituted or substituted, and the substituent may be unbranched or branched. Preferably the alkyl, fluorenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyalkenyl and hydroxyalkynyl groups contain from about 2 to about 10 carbon atoms, and the aryl, aryl ether and hydroxyaryl groups contain About 6 to about 18 carbon atoms. If 1 represents aryl, I is preferably phenyl. Preferably, at least two of the R / C groups on the phenyl group are two different isomers. Examples of at least two different isomers include meta-, para- and ortho- isomers. Preferably, the at least two different isomers are meta- and para-isomers. In this preferred monomer 1,3,5,7-tetra [374 '-(phenylethynyl) phenyl] adamantane (represented in Figure 1D), five isomers are formed: (1) the -, Right-, right-, right-; (2) right-, right-, right-, time_; (3) right-, right-, time-, time · (4) right-time, time-, Between-, between- and (5) between-, between-, between-, between-. In the above formulas VIIA, VIIB, VIIC, VIID, VIII, IXA, IXB, IXC, IHD, X, XVII, XVIII, XIX, XX, XXI, XXII, XXIII, XXIV, XXV and XXVI and the following XXVII and XXVIII examples Each benzene ring-54- 200424228 (48) I Description of the invention continued γ is the same or different 'and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen. When fluorene is aryl, examples of aryl include phenyl or biphenyl. Rhenium is preferably selected from hydrogen, phenyl and biphenyl, and hydrogen is more preferred. At least one of the phenyl groups in the two bridged carbons of the adamantane or bisadamantane is present in at least two different isomer states. Examples of at least two different isomers include meta-para and ortho- isomers. Preferably, the at least two isomers are meta- and para-isomers. In the best dimer L3 / 4-bis {1,, 3,, 5, -reference [3 ”/ 4”-(phenylethynyl) phenyl] adamantane-7, -yl} benzene (in In the table in Figure 1F), 14 isomers are formed as follows. Preferably, the phenyl group located between the two bridgehead carbons of the adamantane is present in the meta- and para-isomer form. For each of the two aforementioned isomers, seven isomers of RlCsC on seven phenyl groups are formed as follows: (1) para_, para-, para-, para-, para_, para_; 2) Right _, right _ right _, right _, right-, time (3) right ·, right _, right ·, right ..., time between ·; (4) right ·, right _, right-, time- (5) right-, right-, right-, right-, right-, right-, right-, right-, right-, right-, right-, (-) 7) Room ·, Room_, Room_, Room ·, Room-, Room-. In addition to the branched adamantane structure of the above chemical formula 乂 along 乂, we should understand that when h is 0, i is 0, j is 1, and ~ is 0 or 1, the above chemical formula νΙπ represents as shown in the following chemical formula XXVII. Further branching. I should understand that because further branching of the hanging adamantane unit in chemical formula XXVII can also occur, the branching can go beyond the structure of chemical formula XXVII. -55- 200424228 (49) Description of the invention continued

RR

-56- 200424228 (50) 發明說明續頁 最好該分枝金剛烷是如以下化學式所示。-56- 200424228 (50) Description of the invention continued The branched adamantane is preferably represented by the following chemical formula.

除了以上化學式XXVI的分枝雙金剛烷結構之外,吾人 應該暸解當h是0,i是0,j是1且W是0或1時,以上化學式X 表示如以下化學式XXVIII所示般更進一步的分枝。吾人應 該暸解,因為化學式XXVIII中懸掛雙金剛烷單元進一步的 分枝亦可以發生,所以分枝可以超越化學式XXVIII結構。 -57- 200424228 (51) 發明說明續頁In addition to the branched bisdamantane structure of the above chemical formula XXVI, we should understand that when h is 0, i is 0, j is 1, and W is 0 or 1, the above chemical formula X represents a step further as shown in the following chemical formula XXVIII Branches. I should understand that because further branching of the hanging bisdamantane unit in chemical formula XXVIII can also occur, the branching can go beyond the structure of chemical formula XXVIII. -57- 200424228 (51) Description of the invention continued

RR

-58- 200424228 (52) 發明說明續頁 最好該分枝金剛烷是如以下化學式所示。-58- 200424228 (52) Description of the invention continuation sheet Preferably, the branched adamantane is represented by the following chemical formula.

在熱固性組份(a)中,單體(a)及寡聚物或聚合物(b)的含 量是藉以下分析測試法章節中所述之膠滲層析技術測定 。本組合物包括量約30至約70面積百分比之金剛烷或雙金 剛烷單體(a)(更佳約40至約60面積百分比,甚至更佳約45 至約55面積百分比)和量約70至約30面積百分比之寡聚物 或聚合物(b)(更佳約60至約40面積百分比,甚至更佳約55 至約45面積百分比)。本組合物較佳包括量約50面積百分 -59- 200424228 (53) 發明說明績頁 比之單體(1)和量約50面積百分比之寡聚物或聚合物(2)。 分析測試法章節列示二個膠滲層析法。二者皆提供類似 的結果。一個熟諳此藝者可以選擇使用第二方法,該法產 生二聚物和三聚物更多的細節。 通常,金剛烷或雙金剛烷單體(1)對寡聚物或聚合物(2) 的份量比例能夠以希望的方式設定,例如,藉由在製備根 據本發明之組合物期間改變起始組份之莫耳比,藉由調整 反應條件以及藉由改變沉澱/離析步驟期間非溶劑對溶劑 的比例。 一種製備該熱固性組份(a)之較佳方法包括以下步驟。 在步驟(A)中,使金剛烷或雙金剛烷與化學式XXIX的鹵 基苯化合物反應,The content of the monomer (a) and the oligomer or polymer (b) in the thermosetting component (a) is determined by the gel chromatography technique described in the analytical test method section below. The composition includes an amount of about 80 to about 70 area percent of adamantane or bisadamantan monomer (a) (more preferably about 40 to about 60 area percent, even more preferably about 45 to about 55 area percent) and an amount of about 70. Oligomer or polymer (b) to about 30 area percent (more preferably about 60 to about 40 area percent, even more preferably about 55 to about 45 area percent). The composition preferably includes an amount of about 50 area percent -59- 200424228 (53) invention description page ratio monomer (1) and an amount of about 50 area percent of oligomer or polymer (2). The Analytical Test Methods section lists two gel chromatography methods. Both provide similar results. A skilled artist can choose to use the second method, which produces more detail in dimers and trimers. In general, the proportion of the adamantane or bisadamantane monomer (1) to oligomer or polymer (2) can be set in a desired manner, for example, by changing the starting group during the preparation of the composition according to the invention Molar ratio, by adjusting the reaction conditions and by changing the ratio of non-solvent to solvent during the precipitation / isolation step. A preferred method for preparing the thermosetting component (a) includes the following steps. In step (A), reacting adamantane or bisadamantane with a halobenzene compound of formula XXIX,

(其中Y是從氫、烷基、芳基、經取代芳基或_素選擇,且 Yi是鹵素)以形成一混合物,倘若使用金剛烷,則該混合 物包括至少一個化學式III之單體(Where Y is selected from hydrogen, alkyl, aryl, substituted aryl, or halogen, and Yi is halogen) to form a mixture, and if adamantane is used, the mixture includes at least one monomer of formula III

和至少一個化學式IV之寡聚物或聚合物(其中h是0至10 ,1是0至10,j是0至10且w是0或1), -60- 200424228 發明說明績頁 (54)And at least one oligomer or polymer of formula IV (where h is 0 to 10, 1 is 0 to 10, j is 0 to 10, and w is 0 or 1), -60- 200424228 Summary Sheet (54)

最好該寡聚物或聚合物是屬化學式XXX -61 - 200424228 (55) 發明說明續頁Preferably, the oligomer or polymer is of the formula XXX -61-200424228 (55) Description of the invention continued page

-62- 200424228 (56) 發明說明續頁 或者,倘若使用雙金剛烷,則該混合物包括至少一個化學 式V之單體-62- 200424228 (56) Description of the invention continued or, if bisadamantane is used, the mixture includes at least one monomer of formula V

QQ

和至少一個化學式VI之寡聚物或聚合物(其中h是0至10,i 是0至10,j是0至10且w是0或1),And at least one oligomer or polymer of formula VI (where h is 0 to 10, i is 0 to 10, j is 0 to 10 and w is 0 or 1),

最好該至少一個寡聚物或聚合物是屬化學式XXXI -63- 200424228 (57) 發明說明續頁Preferably the at least one oligomer or polymer is of formula XXXI -63- 200424228 (57) Description of the invention continued on

-64- 200424228 (58) 發明說明續頁 热讀此藝者應該瞭解,反應可以在雙金剛烷上於除了在以 上化學式V和VI中所指者外之橋頭碳上發生。 在步驟(B)中,從步驟(A)產生之混合物與化學式RlC=CH 的末端炔反應。最好本方法形成以上化學式VnA、VIIB、 VIIC、VIID及 VIII或 ΙΧΑ、ΙΧΒ、IXC、IXD和 X之組合物。 在步驟(A)中,金剛烷或雙金剛烷與化學式χχιχ的鹵基 苯化合物反應。除了鹵素基Y i和先前所述之反應基γ外, 該1¾基苯化合物亦能夠包含更多取代基。 _基苯化合物較佳是從溴苯、二溴苯和碘苯選擇。溴苯 及/或二溴苯較佳,溴苯甚至更佳。 金剛:或雙金剛燒與鹵基苯化合物之反應(步驟(Α))較 佳在路易士酸(Lewis acid)觸媒存在下經由弗瑞德·克來特 (Friedel-Craft)反應發生。雖然所有慣用的路易士酸觸媒皆 可以使用,但是最好該路易士酸觸媒包含至少一個從氣化 鋁(III)(A1C13)、溴化鋁(IIl)(AlBr3)和碘化鋁(ιπ)(Α1Ι3)選擇之 化合物。氯化銘(III) (AICI3)最佳。雖然漠化鋁(Η〗)的路易士 酸度較大’但是用途通常較不佳,因為其低昇華點僅9〇^ ,所以在工業規模上遠較氣化鋁(ΙΠ)(例如)更難以操作。 在一更佳例中,弗瑞德-克來特反應係在一第二觸媒組 份存在下進行。第二觸媒組份較佳包含至少一個從具4至 20個$反原子之二級鹵燒、具4至20個碳原子之三級燒醇 具4至20個碳原子之二級和三級烯烴及三級鹵素境基芳其 化合物選擇。特定而言,第二觸媒組份包含至少一個從2_澳 -2-甲基丙烷(三級丁基溴)、2-氯-2-甲基丙烷(三級丁基氯 -65- 200424228-64- 200424228 (58) Description of the Invention Continued The reader should understand that reactions can occur on bisdamantane on bridgehead carbons other than those mentioned in Chemical Formulas V and VI above. In step (B), the mixture produced from step (A) is reacted with a terminal alkyne of the formula R1C = CH. Preferably, this method forms a combination of the above formulae VnA, VIIB, VIIC, VIID and VIII or IXA, IXB, IXC, IHD and X. In step (A), adamantane or bisadamantane is reacted with a halobenzene compound of the formula χχχχ. In addition to the halogen group Yi and the previously mentioned reactive group γ, the 12-phenylbenzene compound can also contain more substituents. The phenylbenzene compound is preferably selected from bromobenzene, dibromobenzene, and iodobenzene. Bromobenzene and / or dibromobenzene are preferred, and bromobenzene is even more preferred. Donkey Kong: The reaction of diamanta and halogenated benzene compounds (step (A)) is preferably carried out via a Friedel-Craft reaction in the presence of a Lewis acid catalyst. Although all conventional Lewis acid catalysts can be used, it is preferred that the Lewis acid catalyst contains at least one element selected from the group consisting of aluminum (III) vaporized (A1C13), aluminum bromide (IIl) (AlBr3), and aluminum iodide ( ιπ) (Α1Ι3) selected compounds. Chlorinated (III) (AICI3) is best. Although the aluminum acidity of desertified aluminum (Η) has a higher acidity, but its use is generally poor, because its low sublimation point is only 90%, so it is far more difficult on an industrial scale than aluminumized aluminum (ΙΠ) (for example). operating. In a more preferred embodiment, the Fred-Kleite reaction is performed in the presence of a second catalyst component. The second catalyst component preferably contains at least one secondary halogenated burner having 4 to 20 carbon atoms, a tertiary burner having 4 to 20 carbon atoms, and a secondary alcohol having 4 to 20 carbon atoms. Choice of higher olefins and tertiary halogenated aromatic compounds. Specifically, the second catalyst component contains at least one from 2-A-2-methylpropane (tertiary butyl bromide), 2-chloro-2-methylpropane (tertiary butyl chloride -65- 200424228).

發明說明續頁 、2-甲基-2-丙醇(三級丁醇)、異丁埽、2_溴丙烷和三級丁 基溴苯選擇之化合物,以2-溴甲基丙烷(三級丁基漠)最 佳。整體而言,烷基包括5個或更多個碳原子之化合物較 不適當’因為固悲組份在反應終止時從反應溶液沉澱出。 最佳該路易士酸觸媒是氣化鋁且第二觸媒組 份是2-溴-2-甲基丙烷(三級丁基溴)或三級丁基溴苯。 進行弗瑞德-克來特反應的較佳步驟是混合金剛烷或雙 金剛烷、鹵基苯化合物(例如溴苯)和路易士酸觸媒(例如氯 化銘)並在溫度30°C至50 C (較佳35°c至45艽,尤指4〇t )加 熱。在低於30°C之溫度’反應並不完全,即例如形成較高 比例之三取代金剛:。原則上,希望使用甚至高於以上所 述之溫度(例如60°C ),但此以不希望的方式,造成在步驟 (A)之反應混合物中得到較高比例之非鹵化芳物質(例如 苯)。其後通常以5至1〇小時的時間(較佳6至7小時)將觸媒 系統的第二組份(即二級丁基溴)添加於以上反應溶液,添 加終止後,在以上所指慣例的溫度範圍,再以5至10小時(較 佳7小時)混入反應混合物中。 令人意外地,除了單體四苯基化化合物外,例如1,3,5,7-四(3,/4,-溴苯基)金剛统’在步驟(A)後得到的混合物中亦發 現其寡聚物或聚合物。吾人完全意想不到化學式III之金剛 烷單體對化學式1V之金剛寡聚物或聚合物之份量比例或 化學式V之雙金剛燒單體對化學式VI之雙金剛烷寡聚物或 聚合物的份量比例此夠經由金剛燒或雙金剛燒、_基苯化 合物(例如溴苯)和第二觸媒組分(例如三級丁基溴)的用量 -66 - 200424228 (60) 發明說明續頁 而控制。在步驟(A)的反應混合物中,金剛烷或雙金剛烷 對自基苯化合物對第二觸媒組份之莫耳比較佳是1 : (5-15) :(2-10),甚至更佳 1 : (8-12) : (4-8)。 在具化學式XXX和XXXI之化合物中,並未界定鹵素取代 基Yi的位置。最好該混合物包括間-和對-異構物,不像全 部是對-異構物者,其有利地產生改良之溶解度和良好的 薄膜性質。在步驟(A)的反應混合物中,除了單體和寡聚 物或聚合物之外,亦能夠發生起始組份和副產物(如未完 全苯基化之金剛烷)。 從步驟(A)產生之混合物係視需要地使用熟諳此藝者已 知之方法整理。例如,可能需要從混合物移除未反應之鹵 素苯基化合物(即溴苯),以便得到一種有用於進一步反應 且具高比例化學式VIIA、VIIB、VIIC或VIID及VIII或IXA、IXB 、IXC或IXD和X之化合物的產物。可以使用任何可與鹵基 苯化合物(即溴苯)混溶,且適於沉澱化學式VIIA、VIIB、VIIC 或VIID及VIII或IXA、IXB、IXC或IXD和X之化合物的任何溶 劑或溶劑混合〜物離析此一產物。最好將步驟(A)所產生之 混合物摻入一-非極性溶劑或溶劑混合物中(如藉滴入),較 佳使用具7至20個碳原子之脂肪族烴或其混合物,尤指至 少一個從庚烷餾份(沸點93-99°C )、辛烷餾份(沸點98-110°C ) 和目前由 Honeywell International Inc.以 Spezial Benzin 80-110°C (沸點80-110°C之石油醚)為商標銷售之烷混合物。Spezial Benzin 80-110°C (沸點80-110°C之石油醚)最佳。有機混合物 對非極性溶劑的重量比較佳是約1:2至約1:20 (更佳約1:5至 -67- (61) (61)200424228 發明說明續頁 約1:13,甚至更佳約1:7至約1:11)。或者,能夠使用一極性 溶劑或溶劑混合物(例如甲醇或乙醇)整理步驟(A)後得到 之混合物,但是較不佳,因為該產物混合物接個如橡膠組 合物般沉澱出。 吾等頃發現,倘若步驟(A)混合物沉澱於某些溶劑中, 則來自以上步驟(A)之單體對反應混合物中其二聚物和三 聚物及S ?長物之波峰比戲劇性地位移。此發現有利地使熟 諳此藝者能夠調整方法條件,以便達到單體對二聚物和三 聚物及寡聚物之目標比。為了降低此比例,較佳使用一種 單體和暴^物或聚合物具有不同溶解度之溶劑。 達到此單體對二聚物和三聚物比例位移之較佳溶劑包 括 Spezial Benzin 80-11(rc (滞點 8(Ml(rc 之石油醚),石油醚 (ligroine)(沸點90-1UTC )和庚烷(滞點98艽"更佳的溶劑是Description of the Invention Continued, 2-methyl-2-propanol (tertiary butanol), isobutylamidine, 2-bromopropane and tertiary butyl bromobenzene selected compounds, with 2-bromomethylpropane (tertiary Butyl Mo) is the best. On the whole, compounds in which the alkyl group includes 5 or more carbon atoms are less suitable because the solid component is precipitated from the reaction solution at the termination of the reaction. Most preferably, the Lewis acid catalyst is aluminum vaporized and the second catalyst component is 2-bromo-2-methylpropane (tertiary butyl bromide) or tertiary butyl bromobenzene. The preferred step for carrying out the Friedel-Crete reaction is to mix adamantane or bisadamantane, a halobenzene compound (such as bromobenzene), and a Lewis acid catalyst (such as chlorin) at a temperature of 50 C (preferably 35 ° C to 45 ° F, especially 40t) is heated. At temperatures below 30 ° C, the reaction is not complete, i.e., a higher proportion of trisubstituted diamonds is formed. In principle, it is desirable to use temperatures even higher than those described above (e.g. 60 ° C), but this in an undesired manner results in a higher proportion of non-halogenated aromatic substances (e.g. benzene ). Thereafter, the second component of the catalyst system (ie, secondary butyl bromide) is usually added to the above reaction solution within a period of 5 to 10 hours (preferably 6 to 7 hours). A conventional temperature range is mixed into the reaction mixture for another 5 to 10 hours, preferably 7 hours. Surprisingly, in addition to monomeric tetraphenylated compounds, for example, 1,3,5,7-tetra (3, / 4, -bromophenyl) adamantine 'is also present in the mixture obtained after step (A). Found its oligomer or polymer. I totally did not expect the proportion of the adamantane monomer of chemical formula III to the oligomeric oligomer or polymer of chemical formula 1V This is controlled by the amount of ramadan or bis-ramadan, ylbenzene compounds (such as bromobenzene) and second catalyst components (such as tertiary butyl bromide) -66-200424228 (60) Continued description of the invention. In the reaction mixture of step (A), the molar ratio of the adamantane or bisadamantyl p-phenylbenzene compound to the second catalyst component is preferably 1: (5-15): (2-10), or even more Good 1: (8-12): (4-8). In the compounds of the formulae XXX and XXXI, the position of the halogen substituent Yi is not defined. Preferably, the mixture includes meta- and para-isomers, unlike all para-isomers, which advantageously results in improved solubility and good film properties. In the reaction mixture of step (A), in addition to the monomers and oligomers or polymers, starting components and by-products (such as incompletely phenylated adamantane) can also occur. The mixture produced from step (A) is optionally prepared by a method known to those skilled in the art. For example, it may be necessary to remove unreacted halogen phenyl compounds (ie, bromobenzene) from the mixture in order to obtain a highly proportioned chemical formula VIIA, VIIB, VIIC or VIID and VIII or IXA, IXB, IXC or IXD for further reactions. And X products. Any solvent or solvent mix that is miscible with halobenzene compounds (ie bromobenzene) and suitable for precipitating compounds of formula VIIA, VIIB, VIIC or VIID and VIII or IXA, IXB, IXC or IHD and X ~ This product was isolated. The mixture produced in step (A) is preferably incorporated into a non-polar solvent or a solvent mixture (e.g. by dropwise incorporation), preferably an aliphatic hydrocarbon having 7 to 20 carbon atoms or a mixture thereof, especially at least One from the heptane fraction (boiling point 93-99 ° C), the octane fraction (boiling point 98-110 ° C), and the spezial Benzin 80-110 ° C (boiling point 80-110 ° C) by Honeywell International Inc. Petroleum ether) is a mixture of alkane sold under the trademark. Spezial Benzin 80-110 ° C (petroleum ether with boiling point 80-110 ° C) is the best. The weight of the organic mixture to the non-polar solvent is preferably about 1: 2 to about 1:20 (more preferably about 1: 5 to -67- (61) (61) 200424228) Description of the Invention Continued about 1:13, or even better John 1: 7 to John 1:11). Alternatively, a polar solvent or a solvent mixture (such as methanol or ethanol) can be used to finish the mixture obtained in step (A), but it is less preferable because the product mixture precipitates out like a rubber composition. We have found that if the mixture of step (A) is precipitated in some solvents, the peak ratio of the monomers from step (A) to its dimers and trimers and S? Longs in the reaction mixture shifts dramatically. . This finding advantageously enables those skilled in the art to adjust the process conditions to achieve the target ratio of monomer to dimer and trimer and oligomer. In order to reduce this ratio, it is preferable to use a solvent in which monomers and compounds or polymers have different solubility. The preferred solvents to achieve this monomer-to-dimer and trimer ratio shift include Spezial Benzin 80-11 (rc (Hysteresis 8 (Ml (rc petroleum ether), Ligroine) (boiling point 90-1 UTC) And heptane (lag point 98 艽 " a better solvent is

SpezialBenzin。更明確而言,為了達到從約3:1單體二聚物 +三聚物+寡聚物位移至約1:卜係將步驟(A)混合物沉澱於SpezialBenzin. More specifically, in order to achieve a shift from about 3: 1 monomer dimer + trimer + oligomer to about 1: bu, the step (A) mixture is precipitated in

Spezial Benzin中,或者,為了達到從約3:1單體:二聚物+三 聚物+寡聚物位移至約mOiO,係將步驟(A)混合物沉澱 於石油醚(ligr0ine)和庚烷中。吾人已知這些在沉澱時波峰 分佈的實質改變是由沉澱濾液中單體的損失解釋:2/3損 失於Spezial Benzin且u/3損失於石油醚(Ugr〇ine)和庚烷,其 符合單體的產量損失50和25-33%。為了使3:1之單體:二聚 物+三聚物+寡聚物比例保持不變,係將步驟(A)之反應混 =物沉澱於觀察無產率損t之甲_内。m慮液的產率 損失和濾液的GPC分析而證實。 -68- (62) (62)200424228 發明說明續頁 如同由Ortiz所述之入★ °成法般,根據本方法步驟(A)之一 較佳版本進行之報搜# + 艰% “ ·克來特反應係直接從與#基苯化 合物偶合之金剛燒鈕私 ^ ^ °相較於例如先前由Reichert等人 1,3,5,7-四(3’/4、違茨其、八 ^ 冬土)i剛烷之合成法,本方法特別有利 ,因為不再需I4 四 >臭化金剛燒,其節省一反應步驟 。同時,形成較少不希望的苯。 熟諳此藝者已知,尤 在以上化學式III、IV、V和VI之化合 物中之_素I Yi , p余了藉金剛、燒與函f苯基化合物直接反 應(例如藉弗瑞德-克來特反應的幫助)外,亦能夠藉多階段 合成法引入,—例如藉由金剛烷與苯基化合物(即無鹵素基In Spezial Benzin, or in order to achieve a shift from about 3: 1 monomer: dimer + trimer + oligomer to about mOiO, the mixture of step (A) is precipitated in lignine and heptane . We know that the substantial change in the peak distribution during precipitation is explained by the loss of monomer in the precipitation filtrate: 2/3 is lost to Spezial Benzin and u / 3 is lost to petroleum ether and heptane. Volume loss of 50 and 25-33%. In order to keep the ratio of monomer: dimer + trimer + oligomer at 3: 1 constant, the reaction mixture of step (A) was precipitated in A_ which was observed without yield loss t. This was confirmed by the loss of yield and GPC analysis of the filtrate. -68- (62) (62) 200424228 Description of the invention The continuation page is as described by Ortiz ★ ° Creation method, according to a better version of step (A) of this method. The Laite reaction is directly from the diamond burning button that is coupled with a # -based benzene compound. Compared with, for example, the previous one by Reichert et al. 1,3,5,7-tetra (3 '/ 4, non-standard, eight The method of synthesizing i-adamantane, this method is particularly advantageous, because the I4 tetra > odorized diamond is no longer needed, which saves one reaction step. At the same time, less undesired benzene is formed. Those skilled in the art are known , Especially in the compounds of the above formulas III, IV, V and VI, the _ prime I Yi, p is the direct reaction of phenyl compounds with diamond, sintering and hydrazine (for example, with the help of Fred-Kleite reaction) In addition, it can be introduced by multi-stage synthesis, such as by adamantane and phenyl compounds (that is, halogen-free

Yi)偶合’繼之藉由與w(Yi)2(例如ΒΓ2)之加成反應而引入反 應基Υ1 ’雖然這較不佳。 在較佳万法的步驟(Β)中,步驟(Α)後得到之混合物(視需 要經整理)與化學式Rlc<:(其中如先前所定義般)之末 端炔反應。 在化學式R^CbCH中,Ri與先前所述化學式VIIA、VIIB、 VIIC或VIID和mn之金剛烷產物和化學式ΙΧΑ、ΙΧΒ、IXC 或IXD和X的雙r金剛烷產物的反應基Ri相同。因此,最佳使 用乙決基苯(苯基乙炔)作為步驟(B)中反應的末端炔。 在步驟(B)中為了使末端炔偶合於位在金剛烷系統的鹵 基苯反應基,可以使用所有適於此目的的習知偶合法,例 如在 Diederich,F·,和 Stang,P. J·,(Eds.) "Metal-Catalyzed Cross-Coupling Reactions” ’ Wiley-VCH 1998 和 March,J.,'’Advanced Organic Chemistry' 第 4版,John Wiley & Sons 1992,第 717/718 -69- 200424228 (63) 發明說明續頁 頁所述般。 當苯基上的γ是接附於以上化學式Vin或以上化學式χ 中二個籠狀結構橋頭碳時,γ可以與苯基乙炔反應而產生 末端乙炔基。 在-根據本發明方法的較佳版本中,步驟(Α)後得到之混 合物(視需要經整理)與末端炔之反應係在如所謂Yi) coupling 'is followed by the introduction of the reaction group Υ1' by an addition reaction with w (Yi) 2 (e.g., Γ2), although this is less favorable. In step (B) of the preferred method, the mixture obtained after step (A) (sorted as necessary) is reacted with the terminal alkyne of the formula Rlc <: (wherein, as previously defined). In the chemical formula R ^ CbCH, Ri is the same as the reactive group Ri of the adamantane product of the chemical formula VIIA, VIIB, VIIC, or VIID and mn and the bis-r adamantane product of the chemical formulas IXA, IXB, IXC, or ID and X. Therefore, ethylidenebenzene (phenylacetylene) is preferably used as the terminal alkyne for the reaction in step (B). In order to couple the terminal alkyne to the halobenzene reactive group in the adamantane system in step (B), all conventional coupling methods suitable for this purpose can be used, such as in Diederich, F., and Stang, P. J. · (Eds.) &Quot; Metal-Catalyzed Cross-Coupling Reactions "'Wiley-VCH 1998 and March, J.," Advanced Organic Chemistry' 4th Edition, John Wiley & Sons 1992, Nos. 717/718 -69 -200424228 (63) Description of the invention as described on the following pages. When γ on phenyl is attached to two cage-like bridge carbons in the above chemical formula Vin or the above chemical formula χ, γ can be produced by reaction with phenylacetylene Terminal ethynyl. In a preferred version of the method according to the invention, the reaction between the mixture obtained after step (A) (finished as necessary) and terminal alkyne is in the so-called

Sonogashira偶合(比較 T〇hda; fjagihara; TrtrahedronSonogashira coupling (compare T〇hda; fjagihara; Trtrahedron

Lett· 1975’第4467頁)中所使用之觸媒系統存在下進行。使 用一種在各情況下包含至少一種化學式[Ar3p]2pdX2 (其中 Ar=方基且X==卣素)之鈀-三芳基膦錯合物、一種銅鹵化物(例 如Cul)、一種驗(例如三烷基胺)、一種三芳基膦和一種共 〉谷劑之觸媒系統甚至更佳。根據本發明,此較佳觸媒系統 旎夠同樣地由所指之組份組成。該共溶劑較佳包含至少一 種從甲苯、二甲苯、氯苯、N,N-二甲基甲醛和1-甲基-2-比咯 哫酮(N-甲基比咯啶酮(NMP))選擇之組份。包含組份雙(三 苯基鱗)二氯化鈀(ΙΠ)(即[Ph3P]2PdCl2)、三苯基膦(即[Ph3P]) 、碘化銅(I)、芝乙胺和作為共溶劑之甲苯之觸媒系統最佳。 從步驟(A)得到之混合物(視需要經整理)與末端炔反應 的最佳步驟係首先使混合物與鹼(例如三乙胺)和共溶劑(例 如甲苯)混合,並將此混合物在室溫攪拌幾分鐘。其後添 加免-三苯基膦錯合物(例如Pd[PPh3]2Cl2)、三苯基膦(PPh3) 和銅鹵化物(例如碘化銅(1)),並將此混合物在5〇t至9〇t: 之溫度範圍(更佳8(rc至85〇加熱。接著在1至2〇小時内(3 小時更佳)於所指的溫度範圍内添加末端炔。在添加終止 -70- 200424228 (64) 發明說明續頁 後,將混合物在75°C至85°C之溫度(更佳80°C )加熱至少5至 20小時(更佳12小時)。其後於反應溶液添加溶劑並在減壓 下蒸除。最好在過濾後將反應溶液冷卻至20°C至30°C之溫 度(更佳25°C )。最後,以熟諳此藝者已知之習知方法整理 步驟(B)之反應混合物,尤指移除微量金屬(例如Pd)。 倘若步驟(B)混合物沉澱於某些溶劑中,則從以上步驟 (B)產生之單體對反應混合物中其二聚物和三聚物及寡聚 物之波峰比便位移。 令人驚訝地,直接從金剛烷開始之反應順序造成步驟 (A)的反應產物中寡聚物或聚合物含量能夠經由金剛烷、 鹵化苯化合物和第二觸媒組份(即三級丁基溴)的使用比 例控制。在對應的方式中,由於在工業規模合成法中苯的 毒性,所以步驟(A)的反應混合物中苯含量亦經由此使用 比例而成功地調節是非常重要。寡聚物或聚合物含量容許 與單體相同之第二化學(例如1,3,5,7·四(374,-溴苯基)金剛 燒’即該寡聚物或聚合物恰與與步驟(B)中末端炔反應之 單體般容易得τ到)。 在另一具體二實施例中,本發明提供⑷一種至少二個化 學式XXXII之不同異構物的混合物Lett. 1975 ’p. 4467) was performed in the presence of a catalyst system. Using a palladium-triarylphosphine complex containing in each case at least one formula [Ar3p] 2pdX2 (where Ar = square and X == fluorene), a copper halide (such as Cul), a test (such as Trialkylamine), a triarylphosphine, and a co-cement catalyst system are even better. According to the present invention, the preferred catalyst system is similarly composed of the indicated components. The co-solvent preferably contains at least one selected from toluene, xylene, chlorobenzene, N, N-dimethylformaldehyde, and 1-methyl-2-pyrrolidone (N-methylpyrrolidone (NMP)). Selected components. Contains bis (triphenylscale) palladium (III) dichloride (i.e. [Ph3P] 2PdCl2), triphenylphosphine (i.e. [Ph3P]), copper (I) iodide, zhiethylamine and co-solvent The toluene catalyst system is the best. The best step for reacting the mixture obtained from step (A) (finished as necessary) with terminal alkynes is to first mix the mixture with a base (such as triethylamine) and a co-solvent (such as toluene), and leave the mixture at room temperature Stir for a few minutes. Thereafter, a free-triphenylphosphine complex (such as Pd [PPh3] 2Cl2), triphenylphosphine (PPh3), and a copper halide (such as copper (1) iodide) are added, and the mixture is heated at 50 to 90 °: temperature range (better 8 (rc to 85 ° heating). Then add terminal alkyne within 1 to 20 hours (more preferably 3 hours) within the indicated temperature range. End of addition -70- 200424228 (64) Description of the invention After the continuation of the page, the mixture is heated at a temperature of 75 ° C to 85 ° C (more preferably 80 ° C) for at least 5 to 20 hours (more preferably 12 hours). Thereafter, a solvent is added to the reaction solution and the Evaporate under reduced pressure. It is best to cool the reaction solution to a temperature of 20 ° C to 30 ° C (more preferably 25 ° C) after filtration. Finally, arrange step (B) by a conventional method known to those skilled in the art. The reaction mixture, especially the removal of trace metals (such as Pd). If the mixture of step (B) precipitates in some solvents, the monomers produced from step (B) above will react with its dimers and trimers in the reaction mixture. The peak ratios of the oligomers and oligomers are shifted. Surprisingly, the reaction sequence starting directly from adamantane results in oligomers in the reaction product of step (A). The polymer or polymer content can be controlled through the use ratio of adamantane, halogenated benzene compound and second catalyst component (ie, tertiary butyl bromide). In a corresponding manner, due to the toxicity of benzene in industrial scale synthesis, Therefore, it is very important that the benzene content in the reaction mixture of step (A) is also successfully adjusted through this use ratio. The oligomer or polymer content allows the same second chemistry as the monomer (for example, 1, 3, 5, 7 · Tetrakis (374, -bromophenyl) adamantine, that is, the oligomer or polymer is just as easily obtained as the monomer that reacts with the terminal alkyne in step (B)). In another specific embodiment, The present invention provides a mixture of at least two different isomers of formula XXXII

QQ

QQ

和(b)如上述之黏性促進劑。e是一如以上所定義之籠狀化 -71 - 200424228 (65) 發明說明續頁 合物,且Q是相同或不同,並選自氫、芳基、分枝芳基和 經取代芳基(其中該取代基包括氫、i素、烷基、芳基、 經取代芳基、雜芳基、芳基醚、晞基、炔基、烷氧基、羥 烷基、羥芳基、羥烯基、羥炔基、羥基或羧基)。至少不 同的異構物實例包括間-,對-和鄰-異構物。較佳該至少二 種不同異構物是間-和對-異構物。 最好該混合物包括至少二個化學式XXXIII的不同異構物 表 Η 其中Q是如先前所定義般。最好該混合物包括至少二個化 學式XXXIV的不同異構物And (b) a viscosity promoter as described above. e is a cage-like as defined above-71-200424228 (65) Description of the invention Continuation sheet, and Q is the same or different and is selected from hydrogen, aryl, branched aryl and substituted aryl ( Wherein the substituent includes hydrogen, i-prime, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl , Hydroxyalkynyl, hydroxy, or carboxyl). Examples of at least different isomers include meta-, para- and ortho-isomers. Preferably the at least two different isomers are the meta- and para-isomers. Preferably the mixture includes at least two different isomers of formula XXXIII. Table Η where Q is as previously defined. Preferably the mixture includes at least two different isomers of the chemical formula XXXIV

化學式XXXV的不同異構物Different isomers of chemical formula XXXV

-72- 200424228 (66) 發明說明續頁 或化學式XXXVI的不同異構物-72- 200424228 (66) Description of Invention Continued or Different Isomers of Chemical Formula XXXVI

Η 其中Υ是相同或不同,並從氫、烷基、芳基、經取代芳基或 鹵素選擇,且各Ri是相同或不同,並從氫、鹵素、烷基、 芳基、經取代芳基、雜芳基、芳基醚、烯基、炔基、烷氧 基、經燒基、芳基、經烯基、經块基、經基或叛基選擇。 最好該混合物包括至少二個化學式XXXVII的不同異構物 αΗ where Υ is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen, and each Ri is the same or different, and is selected from hydrogen, halogen, alkyl, aryl, substituted aryl , Heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, via alkyl, aryl, via alkenyl, via block, via or tether. Preferably, the mixture includes at least two different isomers of formula XXXVII.

α 其中各Q是如先前所定義般。最好該混合物包括至少二個 化學式XXXVIII的不同異構物α where each Q is as previously defined. Preferably the mixture includes at least two different isomers of formula XXXVIII

Η -73 - 200424228 (67) 發明說明續頁 化學式XXXIX的不同異構物Η -73-200424228 (67) Description of the invention continuation page Different isomers of chemical formula XXXIX

其中丫和Ri是如先前所定義般。 黏性促進劑(b4 : 黏性促進劑(b)是在吾人於2001年12月31日所申請共同 讓與之待審中之專利申請案PCT/US01/50182中揭示,將其 全文以引用方式併入本文。 在黏性促進劑(b)中,最好第一個官能度和第二個官能 度中至少一項是從含Si基、含N基、含C-0基、羥基及含C=C 基選擇。該含Si基較佳是從Si-H、Si-Ο及Si-N選擇;含1^基 -74- 200424228 (68) 發明說明續頁 是成例如C-NH2或其它二級及三級胺、亞胺、醯胺和醯亞 胺選擇,含C-0基是從=c〇、羰基(如酮和醛)、酯、-COOH 、具有1至5個碳原子之烷氧基、縮水甘油醚及環氧基選擇 ;該羥基是酚;且含C=C基是從烯丙基和乙晞基選擇。對 於半導體應用而言,更佳的官能基包括含以基、含C-0基 、岁里基及乙婦基。 一種具有含Si基之較佳黏性促進劑實例是化學式χι之 矽坡:(R2)k(R3)lSi(R4)m(R5)n (其中R2、R3、仏和尺5各自獨立 表示氫、義基、不飽和或飽和烷基、經取代或未經取代之 燒基’其中該取代基是胺基或環氧基、飽和或不飽和燒氧 基、不飽和或飽和羧酸基或芳基;R2、r3、尺4和Rs中至少 二個係表示氫、羥基、飽和或不飽和烷氧基、不飽和烷基 或不飽和羧酸基;且k+l+m+nM)。實例包括乙烯矽烷類(如 H2C=CHSi(CH3)2H和 H2C=CHSi(R18)3,其中 r18是 CH30、C2H50 、AcO、H2C=CH或H2C=C(CH3)0-或乙烯基苯基甲基矽烷); 化學式 H2C=CHCH2-Si(OC2H5)3 和 H2C=CHCH2-Si(H)(OCH3)2 之 晞丙基矽烷類縮水甘油丙氧^基矽烷類(如(3-縮水甘油丙 氧》基)甲基"一乙氣碎燒和(3-縮水甘油丙氧基)三甲氧秒:):完) ;化學式H2C=(CH3)COO(CH2)3-Si(OR19)3之甲基丙烯基丙氧 基矽烷類(其中R19是烷基,較佳甲基或乙基);胺基丙基矽 烷衍生物(包括 H2N(CH2)3Si(OCH2CH3)3、H2N(CH2)3Si(OH)3或 H2N(CH2)3OC(CH3)2CH=CHSi(OCH3)3)。上述矽烷類可從 Geiest 購得。 一具有含C-0基之較佳黏性促進劑實例是縮水甘油醚, 200424228 (69) 發明說明續頁 包括(但不限於)1,1,1-三(羥苯基)乙烷三縮水甘油醚,其可 以從TriQuest購得。 一具有含C-0基之較佳黏性促進劑實例是含至少一個羧 酸基之不飽和羧酸的酯類。實例包括三官能曱基丙烯酸酯 、三官能丙晞酸酯、三羥甲基丙烷三丙烯酸酯、二季戊四 醇五丙烯酸酯和縮水甘油基曱基丙晞酸酯。前述者全部可 從Sartomer購得。 一具有乙烯基之較佳黏性促進劑實例是乙烯基環族吡 啶寡聚物或聚合物,其中該環族基是吡啶、芳香族或雜芳 香族。有用的_實例包括(但不限於)2-乙烯吡啶和4-乙烯吡 啶,可從Reilly購得;乙烯基芳香族化合物;和雜芳香族 類,包括(但不限於)乙晞?奎琳、乙晞叶峻、乙晞咪峻和乙 蹄u号峻。 一具有含Si基之較佳黏性促進劑實例是在1999年12月23 曰所申請共同讓與之共同待審中之美國專利申請案序號 第09/471299號中揭示之聚碳矽烷,將其全文以引用方式併 入本文。該聚^炭矽烷是屬化學式XII : Η I -Si — R? -Si- R9 |io Si—R12· O—Rjj r13 一Ris R14 q p 其中r6、r12和r15各獨立表示經取代或未經取代之亞烷基 、環亞烷基、伸乙晞基、伸晞丙基或亞芳基;r7、r8、r9 -76- 200424228 (70) 發明說明續頁 、Rio、Ri3和Ri4各獨立表示氫原子或有機基團,包括燒基 、伸燒基、乙晞基’環燒基、晞丙基或芳基,且可以是、綠 性或分枝;Rl 1表示有機矽、矽燒基、矽氧基或有機基團 :且p、q、r和s滿足[4Sp+q+r+s<100,000]之條件,且q和咖s 可以集體或獨立是零。該有機基團可以包含多達18個碳原 子,但通常包含約1至約10個碳原子。有用的烷基包括_CH2_ 和-(CH2)u-,其中 U> 1。 本發明之較佳聚碳矽烷類包括二氫化聚碳矽燒類,其中 R6是一經取代或未經取代之伸烷基或苯基,r7是氫原子且 在聚碳矽烷鏈__中無懸掛基;即q、r和S全部是〇。聚碳珍燒 類的另一較佳基是化學式viii中r7、r8、r9、Rl0、Κΐ3及Ri4 是具有2至10個碳原子之經取代或未經取代烯基者。缔基 可以是乙烯基、丙晞基、烯丙基、丁晞基或任何其它具有 多達10個碳原子之未經取代有機主鏈基。該烯基本質上可 以是二烯基,包括在其它烷基或不飽和有機聚合物主鏈上 歸卦或取代之不飽和烯基。這些較佳聚碳矽烷類之實例包 栝和二氫或錦^基取代之聚碳碎燒類(如聚二氫化碳矽烷和-聚烯丙基氫彳碳矽烷)及聚二氫化碳石夕燒和聚烯丙基氫化 碳碎嫁之無規共聚物。 在更隹之聚碳矽烷中,化學式乂1][之R7基是氫原子和且 以是亞甲基,且懸掛基q、r和S是〇。其他本發明之較佳聚 碳矽烷化合物是化學式ΧΠ之聚碳碎燒’其中1和Ru是氫 ,R6和R15是亞甲基,且R14是婦基,且懸掛基q和r是〇。該 聚碳矽烷類較佳是來自廣為人知的先前技術方法或由聚 -77- 200424228 (71) 發明說明績頁 碳矽烷組合物之製造業者提供。在最佳的聚碳矽烷中,化 學式VIII之R7基是氫原子;反6是_ch2- ; q、r和s是0且P是5 至25。這些最佳聚碳矽烷可以從Starfire systems,Inc.得到 。這些最佳聚碳矽烷的例如下: 聚碳矽烷 重量平均分子量 多分散性 波學分子量 (Mw) (Md) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3 (具10%晞丙基) 10,000-14,000 10.4-16 1160 4 (具75%晞丙基) 2,400 3.7 410 從化學式XII中能夠觀察到,當r〉〇時,本發明中使用之 聚碳矽烷可以包含矽氧基形式之氧化基。因此,當r〉〇時 ’ R π表示有機碎、碎统基、秒氧基或有機基團。吾人了 解聚碳矽烷之氧化版本(r>〇)在本發明之範圍内非常有效 地操作。同樣顯而易見地,r能夠是0,無關p、q和s,僅有 的條件是化學式ΧΠ之反應基p、q、r和s必需滿足 [4<p+q+r+s<1.⑽,〇〇〇]的條件,且q和r能夠集體或獨立是〇。 聚碳矽烷可·γ以從目前購自許多製造業者之原料並藉習 知聚合法產生。作為合成聚碳矽的實例,該原料可以從常 見的有機矽烷化合物產生,或從原料聚矽烷產生,藉由在 惰性大氣中加熱聚矽烷與聚硼矽氧烷之摻合物而產生對 應、< 聚合物,或藉由在惰性大氣中加熱聚矽烷與低分子量 碳石夕燒之摻合物而產生對應之聚合物,或藉由在觸媒(如 &侧=笨基矽氧烷)存在下於惰性大氣中加熱聚矽烷與低 -78· 200424228 (72) I發明說明續頁 分子量碳矽烷之摻合物而產生對應之聚合物。聚碳矽烷亦 可以藉美國專利第5,153,295號中提出之格里納反應 (Grignard Reaction)合成,將其以引用方式併入本文。 一具羥基之較佳黏性促進劑實例是酚醛樹脂或化學式 XIII之寡聚物:-[R16C6H2(OH)(Ri7)]t-,其中Ri6是經取代或未 經取代之伸烷基、環伸烷基、乙烯基、晞丙基或芳基; Rn是烷基、伸烷基、伸乙烯基、環伸烷基、伸烯丙基或 芳基;且t=3-100。有用的烷基實例包括_Ch2-和_(CH2)v-, 其中v> 1。一個特別有用的酚醛樹脂寡聚物之分子量是 1500 ’ 且可從 Sehenectady International Inc·購得。 本黏性促進劑較佳以熱固性組合物(a)重量比計約0·5〇/〇 多達20%之小且有效量添加,多達約组合物之5 〇〇/0重量比 之量通常更佳。 為了確保對於任何塗層接觸表面之親和力,藉由結合黏 性促進劑和熱固性組份(a)並將該組合物進行熱來源或高 能源’產生的組合物具有遍及整個聚合物之優異黏性特徵 。本黏性促進/多彳亦改良成紋控制、黏性和薄膜均勻度。视 覺檢驗確定存二在改良之成紋控制。 本組合物亦可以包括額外的組份,如額外的黏性促進劑 、消泡劑、清潔劑、火焰阻滯劑、色素、增塑劑、安定劑 和表面活性劑。 用途 : 本熱固性組份(a)和黏性促進劑(b)之組合物可以與其他 特定的添加劑結合而得到特定的結果。此類添加劑的代表 -79- 200424228 (73) 發明說明續頁 物疋含金屬化合物,如用於磁性介質、光學介質或其它記 綠介質之磁性顆粒(如鋇鐵素體、氧化鐵,視需要可以是 與話之混合物,或其它含金屬顆粒);或用於傳導性密封 齊J之傳導性顆粒(如金屬或碳);傳導性黏合劑;傳導性的 $料;電磁干擾(EMI)/射頻干擾(RFI)屏蔽塗料;靜態分散 ’和電力接觸點。當使用這些添加劑時,本組合物可以作 為點合劑。本組合物亦可以用以作為抗製造、貯存或使用 ^境之保護(如塗料),以使金屬、半導體、電容器、感應 器 、太陽能電池、玻璃和玻璃纖維及石英和石英纖維具表 两純性。 - 本熱固性組份⑷和黏性促進劑⑻之組合物亦有用於密 u整片,較佳作為密封層或墊片層,例如在棉麻織品周 ,亦可以單獨使用。此外,該組合物有用於在例如船零 电力開關外殼、浴缸及蓮蓬頭塗層上之抗防污塗料; 抗裳、、 ^ 塗料;或使物件具火焰阻滞性、抗風化性或抗濕性。 於本組合物之抗溫範圍,本組合物可以塗佈於低溫容器 “'、、壓器和爐:^以及熱交換器,和其它加熱或冷卻表面上, 及暴露於微波1射之物件上。 本熱固性組份⑷和黏性促進劑⑻之組合物有用於作為 包材料。遠介電材料較佳介電常數k低於或等於約3 〇, 佳 田 ΛΛ 疋、、’、2·3至3.0。介電材料之玻璃轉移溫度較佳至少35〇〇c。 、、本熱固性組份(a)和黏性促進劑(b)之組合物的層可以藉 ^ =技術形成,如噴霧、滚動、浸潰、旋轉塗佈、流動塗 或鱗製’對於微電子物而言以旋轉塗佈最佳。最好將本 -80 - 200424228 (74) 發明說明續頁 組合物溶於一溶劑中。供用於本組合物溶液之適當溶劑包 括任何在希望的溫度揮發之適當的有機、有機金屬或無機 分子純態或混合物。適當的溶劑包括非質子溶劑,例如環 族酮(環戊酮、環己酮、環庚酮和環辛酮)、環族醯胺(如 N-烷基吡咯啶酮,其中該烷基具有約1至4個碳原子)、N-環己基吡咯啶酮及其混合物。此處可以使用各種其它有機 溶劑,只要其能夠有助於溶解黏性促進劑同時有效控制所 產生溶液作為塗料溶液之黏度。其它適當溶劑包括甲基乙 基酮、甲基異丁基酮、二丁基醚、環族二甲基聚矽氧烷、 丁内酯、γ-丁冉酯、2-庚酮、3-乙氧基丙酸乙酯、聚乙二 醇(二)甲基醚、丙二醇甲基醚乙酸酯(PGEMEA)、茴香醚和 烴溶劑(如菜、二甲苯、苯和甲苯)。較佳的溶劑是環己酮 。典型上,層厚度是在0.1至約15微米之間。作為微電子物 之介電内層,層厚度通常低於2微米。 最好將本熱固性組份(a)和黏性促進劑(b)及溶劑之組合 物在約30°C至約350°C之溫度處理約0.5至約60小時。如藉 GPC證明般,·路處理通常形成一種熱固性組份(a)和黏性促 進劑(b)之寡聚r物。 本組合物可以用於電力裝置,更明確而言,在與單一積 體電路(”ICn)晶片組合之互連内作為内層介電質。一積體 電路晶片典型上在表面上具有許多本組合物之層和多層 金屬導體。其亦可以在不連續的金屬導體間包括本組合物 之區,或在積體電路相同層或水平内之導電區。 在將本聚合物應用於1C時,係使用習知濕式塗佈法(如Where ya and Ri are as previously defined. Viscosity Accelerator (b4: Viscosity Accelerator (b) is disclosed in the pending patent application PCT / US01 / 50182, which I applied for and was jointly assigned on December 31, 2001, which is hereby incorporated by reference in its entirety. In the adhesion promoter (b), it is preferable that at least one of the first functionality and the second functionality is selected from the group consisting of Si group, N group, C-0 group, hydroxyl group and Selection containing C = C group. The Si-containing group is preferably selected from Si-H, Si-O and Si-N; containing 1 ^ group-74- 200424228 (68) Description of the invention The continuation page is for example C-NH2 or Selection of other secondary and tertiary amines, imines, amidines and amidines, containing C-0 groups from = co, carbonyls (such as ketones and aldehydes), esters, -COOH, with 1 to 5 carbon atoms The alkoxy group, glycidyl ether and epoxy group are selected; the hydroxyl group is a phenol; and the C = C group is selected from allyl and acetamyl groups. For semiconductor applications, better functional groups include those containing Base, containing C-0 base, Suiri base and ethynyl. An example of a preferred adhesion promoter with a Si base is the silicon slope of the chemical formula χι: (R2) k (R3) lSi (R4) m (R5 ) n (where R2, R3, 仏, and Chi 5 each independently represent hydrogen Sense group, unsaturated or saturated alkyl group, substituted or unsubstituted alkyl group, wherein the substituent is an amine group or an epoxy group, a saturated or unsaturated alkyl group, an unsaturated or saturated carboxylic acid group or an aryl group; At least two of R2, r3, R4, and Rs represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl, or unsaturated carboxylic acid group; and k + l + m + nM). Examples include ethylene Silanes (such as H2C = CHSi (CH3) 2H and H2C = CHSi (R18) 3, where r18 is CH30, C2H50, AcO, H2C = CH or H2C = C (CH3) 0- or vinylphenylmethylsilane)) ; The chemical formulas H2C = CHCH2-Si (OC2H5) 3 and H2C = CHCH2-Si (H) (OCH3) 2 are propyl silanes glycidyl propoxy ^ silanes (such as (3-glycidyl propoxy) groups) Methyl " monoacetic acid crushing and (3-glycidylpropoxy) trimethoxy sec :): end); methacryl group of chemical formula H2C = (CH3) COO (CH2) 3-Si (OR19) 3 Propoxysilanes (where R19 is alkyl, preferably methyl or ethyl); aminopropylsilane derivatives (including H2N (CH2) 3Si (OCH2CH3) 3, H2N (CH2) 3Si (OH) 3 or H2N (CH2) 3OC (CH3) 2CH = CHSi (OCH3) 3). These silanes are commercially available from Geiest. An example of a preferred adhesion promoter with a C-0 group is glycidyl ether, 200424228 (69) Description of the invention The continuation sheet includes (but is not limited to) 1,1,1-tris (hydroxyphenyl) ethane trishrink Glyceryl ether, which is commercially available from TriQuest. An example of a preferred adhesion promoter having a C-0 group is an ester of an unsaturated carboxylic acid having at least one carboxylic acid group. Examples include trifunctional fluorenyl acrylate, trifunctional propionate, trimethylolpropane triacrylate, dipentaerythritol pentaacrylate, and glycidyl fluorenyl propionate. All of the foregoing are commercially available from Sartomer. An example of a preferred adhesion promoter having a vinyl group is a vinyl cyclic pyridine oligomer or polymer, wherein the cyclic group is pyridine, aromatic or heteroaromatic. Useful examples include (but are not limited to) 2-vinylpyridine and 4-vinylpyridine, available from Reilly; vinyl aromatic compounds; and heteroaromatics, including (but not limited to) acetamidine? Kui Lin, Yi Jun Ye Jun, Yi Jun Mi Jun and Yi Jiu Jun. An example of a preferred adhesion promoter having a Si group is the polycarbosilane disclosed in U.S. Patent Application Serial No. 09/471299, which was filed on December 23, 1999 and is pending co-pending. The entire contents of which are incorporated herein by reference. The poly ^ carbon silane belongs to the chemical formula XII: Η I -Si — R? -Si- R9 Alkylene, cycloalkylene, ethylene, propyl, or arylene; r7, r8, r9 -76- 200424228 (70) Description of the Invention Continued pages, Rio, Ri3, and Ri4 each independently represent hydrogen Atomic or organic groups, including alkynyl, alkynyl, ethenyl'cycloalkyl, propyl or aryl, and may be green or branched; R1 1 represents organosilicon, silanyl, silicon Oxygen or organic group: and p, q, r, and s satisfy the condition of [4Sp + q + r + s < 100,000], and q and coffee can be collectively or independently zero. The organic group may contain up to 18 carbon atoms, but typically contains about 1 to about 10 carbon atoms. Useful alkyl groups include _CH2_ and-(CH2) u-, where U > 1. The preferred polycarbosilanes of the present invention include dihydropolycarbosilanes, where R6 is a substituted or unsubstituted alkylene or phenyl group, r7 is a hydrogen atom and there is no dangling in the polycarbosilane chain Radicals; that is, q, r, and S are all 0. Another preferred group of polycarbons is that in the formula viii, r7, r8, r9, R10, K3, and Ri4 are substituted or unsubstituted alkenyl groups having 2 to 10 carbon atoms. The alkenyl group may be vinyl, propionyl, allyl, butylfluorenyl or any other unsubstituted organic backbone group having up to 10 carbon atoms. The olefin may be essentially a dienyl group, including an unsaturated alkenyl group that is reduced or substituted on the main chain of other alkyl or unsaturated organic polymers. Examples of these preferred polycarbosilanes include polyhydric or dihydro- or polyalkyl-substituted polycarbohydrates (such as polydihydrocarbon silanes and -polyallylhydrocarbyl silanes) and polydihydrocarbons. Fired and polyallyl hydrogenated carbon random copolymers. In the more polycarbosilane, the R7 group of the formula] 1] [is a hydrogen atom and is a methylene group, and the pendant groups q, r, and S are 0. Other preferred polycarbosilane compounds of the present invention are polycarbohydrates of chemical formula XII, where 1 and Ru are hydrogen, R6 and R15 are methylene, and R14 is feminine, and pendant groups q and r are zero. The polycarbosilanes are preferably derived from a well-known prior art method or provided by the manufacturer of the poly-carbosilane composition. In the most preferred polycarbosilane, the R7 group of Chemical Formula VIII is a hydrogen atom; trans 6 is _ch2-; q, r, and s are 0 and P is 5 to 25. These best polycarbosilanes are available from Starfire systems, Inc. Examples of these optimal polycarbosilanes are as follows: polycarbosilane weight average molecular weight polydispersity wave molecular weight (Mw) (Md) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3 (with 10% propyl propyl ) 10,000-14,000 10.4-16 1160 4 (with 75% propyl propyl) 2,400 3.7 410 It can be observed from Chemical Formula XII that when r> 0, the polycarbosilane used in the present invention may include oxidation in the form of siloxy base. Therefore, when r> 0, 'R π represents an organic fragment, a fragmentary group, a second oxygen group, or an organic group. I have learned that the oxidized version of the depolymerized carbosilane (r > 0) operates very efficiently within the scope of the present invention. It is also obvious that r can be 0, irrespective of p, q, and s. The only condition is that the reactive groups p, q, r, and s of the chemical formula XΠ must satisfy [4 < p + q + r + s < 1.⑽, 〇〇〇] conditions, and q and r can be collectively or independently 0. Polycarbosilane can be produced from materials currently purchased from many manufacturers and by conventional polymerization methods. As an example of synthesizing polycarbosilane, this raw material can be produced from a common organosilane compound, or from a raw material polysilane, and can be produced by heating a blend of polysilane and polyborosiloxane in an inert atmosphere. ; Polymer, or by heating a blend of polysilane and low molecular weight carbon sintered in an inert atmosphere to produce the corresponding polymer, or by the catalyst (such as & side = stupid siloxane) In the presence of an inert atmosphere, a polysilane is heated with a low-78 · 200424228 (72) I. Description of the invention Continuing the blend of molecular weight carbosilane to produce the corresponding polymer. Polycarbosilanes can also be synthesized by the Grignard Reaction proposed in U.S. Patent No. 5,153,295, which is incorporated herein by reference. An example of a preferred viscosity promoter with a hydroxyl group is a phenolic resin or an oligomer of formula XIII:-[R16C6H2 (OH) (Ri7)] t-, where Ri6 is a substituted or unsubstituted alkylene, cyclic Alkenyl, vinyl, propyl or aryl; Rn is alkyl, alkylene, vinylidene, cycloalkylene, alkenyl or aryl; and t = 3-100. Examples of useful alkyl groups include _Ch2- and _ (CH2) v-, where v > 1. A particularly useful phenolic resin oligomer has a molecular weight of 1500 ' and is commercially available from Sehenectady International Inc. The viscosity promoter is preferably added in a small and effective amount of about 0.5% to about 20% by weight of the thermosetting composition (a), and up to about 500% by weight of the composition. Usually better. In order to ensure the affinity for the contact surface of any coating, a composition produced by combining a viscosity promoter and a thermosetting component (a) and subjecting the composition to a heat source or high energy source has excellent viscosity throughout the polymer feature. This adhesion promotion / multi-layering also improves grain control, adhesion and film uniformity. Visual inspection confirmed the existence of improved grain control. The composition may also include additional components such as additional tackifiers, defoamers, cleaners, flame retarders, pigments, plasticizers, stabilizers, and surfactants. Uses: The composition of the thermosetting component (a) and the viscosity promoter (b) can be combined with other specific additives to obtain specific results. Representative of this kind of additives -79- 200424228 (73) Description of the invention: Continuation sheet 疋 Metal compounds, such as magnetic particles (such as barium ferrite, iron oxide, used in magnetic media, optical media or other green recording media, as required) Can be a mixture with words, or other metal-containing particles); or conductive particles (such as metal or carbon) for conductive sealing; conductive adhesives; conductive materials; electromagnetic interference (EMI) / Radio frequency interference (RFI) shielding coatings; static dispersion 'and electrical contact points. When these additives are used, the composition can be used as a spotting agent. The composition can also be used as protection against manufacturing, storage or use (such as coatings), so that metals, semiconductors, capacitors, inductors, solar cells, glass and glass fibers, and quartz and quartz fibers are pure Sex. -The composition of the thermosetting component ⑷ and the adhesion promoter ⑻ is also used in the whole film, preferably as a sealing layer or a gasket layer, for example, around the cotton and linen fabric, and can also be used alone. In addition, the composition has antifouling coatings used on, for example, ship zero power switch housings, bathtubs, and showerhead coatings; anti-smear, anti-fouling coatings; or flame retardation, weathering, or moisture resistance of objects . In the temperature range of the composition, the composition can be coated on low-temperature containers ",, presses, and furnaces: and heat exchangers, and other heating or cooling surfaces, and objects exposed to microwave radiation The composition of the thermosetting component ⑷ and the viscosity promoter ⑻ is useful as a packaging material. The dielectric constant k of the far-dielectric material is preferably lower than or equal to about 30. Jiatian ΛΛ 疋, ', 2, 3 To 3.0. The glass transition temperature of the dielectric material is preferably at least 3500c. The layer of the composition of the thermosetting component (a) and the adhesion promoter (b) can be formed by a technique such as spraying, Roll, dip, spin-coat, flow-coat or scale. 'Spin-coating is best for microelectronics. It is best to dissolve this composition in a solvent Suitable solvents for use in the solution of the composition include any suitable organic, organometallic, or inorganic molecular pure state or mixture that evaporates at the desired temperature. Suitable solvents include aprotic solvents such as cycloketones (cyclopentanone, Cyclohexanone, cycloheptanone, and cyclooctanone), cyclamidine (Such as N-alkylpyrrolidone, where the alkyl group has about 1 to 4 carbon atoms), N-cyclohexylpyrrolidone, and mixtures thereof. Various other organic solvents can be used here as long as they can help Dissolve the viscosity promoter and effectively control the viscosity of the resulting solution as a coating solution. Other suitable solvents include methyl ethyl ketone, methyl isobutyl ketone, dibutyl ether, cyclic dimethyl polysiloxane, butyl Lactones, γ-butyranate, 2-heptanone, ethyl 3-ethoxypropionate, polyethylene glycol (di) methyl ether, propylene glycol methyl ether acetate (PGEMEA), anisole and hydrocarbons Solvents (such as vegetables, xylene, benzene, and toluene). The preferred solvent is cyclohexanone. Typically, the layer thickness is between 0.1 and about 15 microns. As the dielectric inner layer of microelectronics, the layer thickness is usually low. 2 micron. It is best to treat the composition of the thermosetting component (a), the viscosity promoter (b) and the solvent at a temperature of about 30 ° C to about 350 ° C for about 0.5 to about 60 hours. For example, by GPC As it turns out, · road treatment usually forms an oligomeric compound of thermosetting component (a) and viscosity promoter (b). This combination Power means may be used, more specifically, in the combination of a single wafer interconnect integrated circuit ( "ICn) as an inner layer dielectric. An integrated circuit wafer typically has many layers of the composition and multiple metal conductors on the surface. It may also include areas of the composition between discrete metal conductors, or conductive areas within the same layer or level of the integrated circuit. When this polymer is applied to 1C, the conventional wet coating method (such as

-81 - (75) (75)200424228 發明說明續頁 旋轉塗佈)將一本組合物之溶液應用於半導體晶圓一 ^ 足況下可以使用其他廣為人知的塗佈技術,如喷霧塗佈 4動塗佈、或浸潰塗体。作為說明,係將一本組合物之 裱己酮溶液旋轉塗佈於一其中組裝介電傳導性組份之基 才 八後將、,'二塗佈之基材進行熱處理。本組合物的實例 調配物是藉由在常溫條件下將本發明之組合物溶於環己 酮而製備,嚴格遵守清潔拿持以避免在任何具有非金屬襯 裡的習知裝置内之微量金屬污染。所產生之溶液包括以總 溶液重量比計較佳的1 $ % τ、 、,力1至约50重I百分比熱固性組份⑷和 黏性促進劑⑽',及約50至約99重量百分比溶劑,更佳約3 〇重量百刀比熱固性組份⑷和黏性促進劑(b),及約 80至約97重量百分比溶劑。 以下是一種本發明之用途的說明。在平面或凹凸不平表 ==材上應用本組合物而形成層可以藉使用任何傳統 旋轉塗你器)而進行,因為此處使用的組合物 、二技制適於此一塗佈器之黏度。可以 期間簡單風乾)、藉暴露於常溫環境、或藉 之組合物。 、本為固性組份⑷和黏性促進劑(b) 此處包括之基材可以包括任 料。特別希望的基材貫負上固怨之材 屬或塗体金屬或複合物材料璃、陶资、塑膠、金 材包括一㈣或鎵…t m 具體實抱例中,該基 f化物梃孔或晶圓表面、封裝表面(如 -82- (76) 200424228 發明說明續頁-81-(75) (75) 200424228 Description of the Invention (continued on spin coating) Applying a solution of this composition to a semiconductor wafer ^ Other well-known coating techniques such as spray coating can be used under conditions 4 Dynamic coating, or dip coating body. By way of illustration, a framed hexanone solution of this composition is spin-coated on a base in which a dielectric conductive component is assembled, and then, the coated substrate is heat-treated. An example formulation of this composition is prepared by dissolving the composition of the present invention in cyclohexanone under normal temperature conditions, strictly following clean handling to avoid trace metal contamination in any conventional device with a non-metallic lining . The resulting solution includes 1% by weight, preferably 1% by weight of the total solution, τ, a force of 1 to about 50% by weight, a thermosetting component ⑷ and a viscosity promoter ⑽ ′, and about 50 to about 99% by weight of a solvent, More preferably, about 30 weight percent is more than the thermosetting component VII and the viscosity promoter (b), and about 80 to about 97 weight percent of the solvent. The following is a description of one use of the present invention. Applying the composition on a flat or uneven surface == to form a layer can be performed by using any conventional spin coating device, because the composition used here and the two techniques are suitable for the viscosity of this applicator . It can be simply air-dried during this period), by exposure to ambient temperature, or by a combination thereof. This is a solid component ⑷ and a viscosity promoter (b) The substrate included here may include any materials. The substrates that are particularly desirable to bear the solid complaints are metal or coated metal or composite materials. Glass, ceramics, plastics, gold materials include gadolinium or gallium ... tm In specific examples, the base compounds are pitted or Wafer surface, package surface (e.g. -82- (76) 200424228 Description of invention continued)

3電路板或印刷配線板中用以作為介電基材材料。以本組 a物製仔之電路板係架設於各種導電器電路 〜、衣向圖騰 蜮強度和優良的黏性 上。電路板可以包括各種不同的強化材料,如編織非傳導性 纖維或玻璃纖維布。此類電路板可能是單面,以及雙面。 從本組合物製得之層具有低介電常數、高安定性、高機 因為黏性促進劑是以分子方式分散 ’這些層說明^时於貼附表面之優良黏性,包括在下面的其 衬和覆蓋封端^或掩蔽層(如Si〇2和SisN4封端層)。使用這此 層排除以至少一個底漆層應用之形式以達到薄膜於基材 及/或覆蓋表面之額外加工步驟。3 Used as a dielectric base material in circuit boards or printed wiring boards. The circuit board system made of a group of objects in this group is set up on various conductive circuits ~, clothing totems, and strength and excellent adhesiveness. Circuit boards can include a variety of different reinforcing materials, such as woven non-conductive fibers or fiberglass cloth. Such boards may be single-sided as well as double-sided. The layers made from the composition have low dielectric constant, high stability, and high mechanical properties because the adhesion promoter is dispersed in a molecular manner. Liner and cover capping layer or masking layer (such as SiO2 and SisN4 capping layer). The use of this layer precludes additional processing steps in the form of at least one primer layer application to reach the film on the substrate and / or cover the surface.

在將本組合物應用於電子凹凸不平的基材後,將經塗佈 表面接受從約50 C提南至向達約450 C之溫度的烘烤和熟 化熱處理。熟化溫度是至少約300°C ’因為較低溫度不足 以完成此處之反應。通常’較佳熟化是在約375°C至約425°C -83- 200424228 (77) 發明說明續頁 之溫度進行。熟化可以在傳統的熟化室内進行,如電爐、 加熱板類似物,且通常是在惰性(非氧化性)大氣(氮下)於 熟化室中進行。除了爐或加熱板熟化外,本組合物亦可以 藉暴露於紫外輻射、微波輻射或電子束輻射而熟化,如共 同讓與之專利公告案PCT/US96/〇8678和美國專利第 6,042,994 ’ 6,080,526 ; 6,177,143 ;和 6,235,353 號",%,一 將其全文以引用方式併入本文。可以在本發明的實務中使 了卩氣化性或還原性大氣(例如氬、氦、氫及氮加工 孔& )’僻若其有效進行熟化本黏性促進調整之熱固性組 份⑷以達到此處之低k介電層。 埶…、而不被涊足為限制,吾人推測本低介電常數組合物之 " 、成熱固性組份(a)和黏性促進劑(b)之交聯網路。 1 本、’且口物 < 熱處理因起較佳聚碳矽烷黏性促進劑 (b)之矽烷部份韓 έ八/ 為亞甲矽基/甲矽基,其接著與熱固性 、,且伤(a)之不飽和結構 ^ . 基材表面二者反應,因而產生主 人撕、、 ()則驅物 < 化學鍵結黏性介面,遍及組 合物這些亞甲^夕基 盥並仆興从: 暴有用以作為接附來源,以藉由 化學鍵結了而繫結並固 Λ @ ^ . 疋任何接觸介面。此反應亦可以 曰/成前於調配或處理期 忐其八^ 〃月間發現。如先削已指示般,自 由基今散遍及組合物表 表面 本層出色地黏附於下面的基材 久覆盍表面結構,如封 的決κ f %或掩蔽層。此處發現之材料 聚碳二:於:現較佳之化學式1聚…黏性促進劑在 的特殊: 結構中具有反應性氫取代矽。此聚碳珍烷 的特點確保其⑴與熱固性 Λ岛0)具反應性,且(2)產生一 -84. (78) (78)200424228 發明說明續頁 具有:良黏性性能之聚碳珍燒改質之熱固性組份⑷。 如前所述般,本黏性促進劑改f熱固性組份⑷塗料可 能作為内層並被其它塗層覆i,如其它介電⑽2)塗層、 Si〇2改質之陶资氧化㈣、切塗層、切碳塗層、含石夕 氮塗層、含矽-氮-碳塗層、鑽石狀碳塗層、氮化鈦塗層、 氮化钽塗層、氮化鶴塗層、銘塗層、鋼塗層、钽塗層:有 機矽氧烷塗層、有機矽玻璃塗層和氟化矽玻璃塗層。此類 多層塗層係於美國專利第4,973,526號教示,將其以引用方 式併入本文》並且,如已經充份地說明般,本在本方法中 所製備聚碳矽戈改質熱固性組份⑷可以即時形成,作為 組裝電子或半導體基材上相鄰導體通路間之夾層介電層。 本薄膜可以用於積體電路製造之雙重鑲嵌(如銅)加工 和基材金屬(如链或銘/鎮)加工。本組合物可以用以作為 蚀刻擔、硬質光罩、空氣橋聯或鈍性塗層以包裹完整的晶 圓。本組合物可以用於希望的全部旋轉塗佈堆積薄膜,如After the composition is applied to an electronic uneven substrate, the coated surface is subjected to a baking and aging heat treatment from a temperature of about 50 C to a temperature of about 450 C. The aging temperature is at least about 300 ° C 'because lower temperatures are not sufficient to complete the reaction here. Generally, the 'preferably ripening' is carried out at a temperature of about 375 ° C to about 425 ° C -83- 200424228 (77) Description of the invention continued on the following page. The ripening can be performed in a traditional ripening room, such as an electric furnace, a hot plate analog, and usually in an inert (non-oxidizing) atmosphere (under nitrogen) in the ripening room. In addition to the curing of a furnace or a heating plate, the composition can also be cured by exposure to ultraviolet radiation, microwave radiation, or electron beam radiation, such as patent publication PCT / US96 / 〇8678 and US Patent No. 6,042,994 '6,080,526; 6,177,143; and 6,235,353 ",%, the entirety of which is incorporated herein by reference. In the practice of the present invention, it is possible to use a gaseous or reducing atmosphere (such as argon, helium, hydrogen, and nitrogen to process holes &). If it is effective to mature the thermosetting component of the viscosity promotion adjustment, to achieve Here the low-k dielectric layer. Alas, without being limited by limitations, I speculate that the low dielectric constant composition " forms a cross-linking path between the thermosetting component (a) and the viscosity promoter (b). 1 Ben, and the heat treatment < heat treatment due to the better polycarbosilane adhesion promoter (b) of the silane part of Han Zhiba / is methylene silyl / silyl, which is followed by thermosetting, and injury Unsaturated structure of (a) ^. The substrate surface reacts with each other, so that the host tears, and () is a chemical bond bonding interface, which is used throughout the composition. It can be used as a source of attachment to bind and fix Λ @ ^. 化学 any contact interface by chemical bonding. This reaction can also be found before or after the preparation or processing period. As indicated by the first cut, free radicals are scattered throughout the surface of the composition. This layer adheres excellently to the underlying substrate, covering the surface structure for a long time, such as a sealing layer or a masking layer. The materials found here Polycarbonate 2: Yu: Now the better chemical formula 1 Poly ... Adhesion promoter in the special: Reactive hydrogen in the structure instead of silicon. The characteristics of this polycarboxane ensure that its plutonium is reactive with the thermosetting Λ island, and (2) produces a -84. (78) (78) 200424228 Description of the invention The continuation sheet has: a polycarpene with good viscosity properties Burning modified thermosetting component ⑷. As mentioned before, the viscosity promoter of the thermosetting component coating can be used as an inner layer and covered by other coatings, such as other dielectric coatings, 2) coatings, Si0 2 modified ceramic materials, and Coatings, cut carbon coatings, stone-containing nitrogen coatings, silicon-nitrogen-carbon coatings, diamond-like carbon coatings, titanium nitride coatings, tantalum nitride coatings, crane nitride coatings, Ming coatings Coatings, steel coatings, tantalum coatings: silicone coatings, silicone glass coatings and fluorinated silicon glass coatings. Such multilayer coatings are taught in U.S. Patent No. 4,973,526, which is incorporated herein by reference, and, as has been fully explained, the polycarbosilicate modified thermosetting components prepared in this method ⑷ It can be formed on the fly as an interlayer dielectric layer between adjacent conductor paths on an assembled electronic or semiconductor substrate. This film can be used for dual damascene (such as copper) processing of integrated circuit manufacturing and substrate metal (such as chain or inscription / town) processing. The composition can be used as an etching mask, a hard mask, an air bridge, or a passive coating to wrap a complete wafer. The composition can be used for all spin-coated stacked films, such as

Michael E. Thomas, MSpin-On Stacked Films for Low keff Dielectrics' Sa^d State Technology (2001^ 7 月)中所教示般, 將其以引用方了式併入本文。本層可以與其它層堆積使用, 該層包括有機矽氧烷(如2002年2月19日所申請共同讓與之 美國專利第6,143,855號和待審中之美國序號第10/078919號 所教示般);Honeywell International Inc/s之市售 HOSP®產品 ;毫微多孔矽石(如共同讓與之美國專利第6,372,666號所教As taught in Michael E. Thomas, MSpin-On Stacked Films for Low keff Dielectrics' Sa ^ d State Technology (2001 ^ July), it is incorporated herein by reference. This layer can be used in combination with other layers. This layer includes organosiloxanes (such as US Patent No. 6,143,855 and US Patent No. 10/078919 filed for joint assignment on February 19, 2002) Teaching-like); Honeywell International Inc / s' commercially available HOSP® products; Nanoporous silica (as taught by commonly assigned US Patent No. 6,372,666)

示般),Honeywell International Inc.’s 市售之 NANOGLASS® E 產品;有機矽倍半氧烷(如共同讓與之世界專利第01/29052 -85- 200424228 (79) 發明說明續頁 號所教示般);及氟矽倍半氧燒(如共同讓與之世界專利第 01/29141號所教示般),將其全文以引用方式併入本文。 實施方式 分析刺試方法一1 質子NMR’·將2-5毫克欲分析之材料樣品置於NMR試管中 。添加約0 · 7愛升去氣氣仿。以手搖動混合物以溶解該材 料。其後使用Varian 400 MHz NMR分析。 膠溶層折法丄GPC):以具Water 996二極體列和water 410微 差折射計偵測器之Waters 2690分離模具進行分離。在二個 : 具氯仿以1毫升/分鐘流動之PLgel 3公尺Mixed-E 300x7.5毫 」 米管柱進行分離。將25公升溶液以約1毫克/毫升之濃度進 行二次。觀察到良好再生性。 以分子量在20,000和500間之相對單分散聚苯乙烯標準 將管柱刻度化。具較低分子量標準的9個不同的組份能夠 溶解’相當於在寡聚物中丁基末端之苯乙烯單體具有9個 苯乙烯。標準物波峰分子量的對數符合溶析時間的三次多 項式。從一半.參大值的全寬度對甲苯平均溶析時間的比例二< 評比儀器的放r大。 i 以下製劑1和2的吸光度在約284毫微米最大。層析圖在 波長低於約300毫微米處的吸光度具有相似的形狀。此處 存在的結果相當於254毫微米吸光度。波峰是藉由將同時 备析之聚苯乙烯的分子量識別。這些值不應該被認為是製 劑1和2寡聚物的分子量量測。能夠將以逐漸提高時間連續 落析之較高寡聚物、三聚物、二聚物、寡聚物和不完整的 -86 - (80) (80)200424228 發明說明續頁 寡聚物定量。 各組份皆較單分散物種所觀察到的更寬。從波峰極大值 的一半處從數分鐘内的全寬度分析此寬度。為了要概略地 计算儀咨擴大,吾等計算 寬度經校正=[寬度觀察2 -寬度儀器2] 1/2 其中寬度儀g是甲苯之觀察寬度,經波峰溶析時間對甲苯 <比例校正。經由該刻度曲線將波峰寬度轉化為分子量寬 度並與波辛分子量寬度對比。因為苯乙埽寡聚物之分子 量與其大小平方成比例,藉由除以2能夠將相對分子量寬 度轉化為相對_—寡聚物大小。此步驟解釋二個中之分子組態 二 差異。 —【: T丨的最初測量表示了 4 s的最大值,所以,循 環時間因而表示定量結果。將所有的樣品溶於CDCh並收 集4000掃描值。經由DEPT指定c、CH、CH# CH3,DEPT清 楚地識別CH2位於41 ppm處,將其歸於金剛烷上無懸臂之3 個鄰近物,而且CH是位於未經取代位置之3〇 ρριη處。鄰近 接附懸臂之矣剩燒CH2在46-48 ppm處出現。同樣地,在35 ppm之四級碳和在31.5 ppm之CH;能夠規於三級丁基。在芳 士 香族區域中,在120和123.5之間的波峰群顯然是非經質子 化之芳族化合物。根據化學位移,吾等將這些歸於溴基芳 族碳。吾等預期接附於脂肪族基(在此情況中是金剛烷)之 芳族環碳原子’四級芳族化合物係位於l45_i55 ppm範圍内 。在-些光譜中於約14、23、29和31,5 ppm處存在更多波辛 。這些可歸於用以清洗樣品之庚I相對庚燒量大體上在 -87- 200424228 (81) 發明說明續頁 樣品之間變化。吾等並未將庚烷定量,因為其對於最後性 能表現是不重要的。 NMR條件: •在Varian Unity Inova 400上取得高解析13C NMR光譜。 • 13C頻率:100.572 MHz。 •使用WALTZ調整將加閘1Η去偶極化。 •光譜寬度:25 kHz。 • 13C 上之 π/2脈衝-13ps。 •循環時間:20秒。 • #數據點:1_00032,2秒取得時間。 • 0填充於FT之131072點。 • 1 Hz指數平整化。 液體層析法-質譜術(LC-MS) ·此分析是藉由Atmospheric Pressure Ionization(API)界面單元,使用一 Hewlett-Packard 1050 系列HPLC系統作為層析法入口 ,在Finnigan/MAT TSQ7000 三階段四極質譜儀系統上進行。取得質量光譜離子電流和 可變化單一波g長紫外線數據供時間-強度層析圖。 層析法是在一 Phenomenex Luna 5微米苯基-己基管柱 (250x4.6毫米)上進行。樣品自動注射通常是在5至20微升濃 縮液之間,於四氫呋喃中及無四氫呋喃。將分析用樣品濃 縮液之較佳製劑溶於四氫咬喃,每毫升約5毫克固體產物 ,供10微升注射。流過管柱之移動相流是1.0毫升/分鐘乙 腈/水,最初1分鐘是70/30,其後梯度安排至在10分鐘處 100%乙腈,並保持至40分鐘。 -88- 200424228 (82) 發明說明續頁 在各別實驗中,正離子化和負離子化皆記錄Atmospheric Pressure Chemical Ionization (APCI)質譜。正 APCI對於這些最 終產物之分子結構更具資料性,其提供質子化之假分子離 子,包括與乙晴基質之加成物。APCI電暈放電是5微安培 ,正離子化約5 kV,且負離子化約4 kV。將加熱毛細管線 維持於200°C,並將蒸發器電池維持於400°C。將四極質量 分析後之離子偵測系統設定於15 kV轉化二次倍增電極和 1500 V電子放大器電壓。關於負離子化之質譜典型上是從 約m/z 50至2000 a.m.u.以1.0秒/掃描記錄,且關於正離子化 則從約m/z 150_a.m.u·開始。在個別的正離子實驗中,二者 皆是以低主調/刻度模式向向上掃描至2000 a.m.u.,並以高 主調/刻度模式至4000a.m.u。 差式掃描熱量法(DSC) : DSC量測是使用一 ΤΑ Instruments 2920差式掃描熱量計併以一控制器和相關的軟體進行。使 用溫度範圍250°C至725°C之標準DSC電池(惰性大氣:50毫 升/分鐘之氮)分析。使用液態氮作為冷卻氣體來源。使用 準確度±0.00增克之Mettler Toledo分析天平將少量樣品 (10-12毫克)小了心稱入一自動DSC鋁樣品盤(零件# 990999-901)内。以預先在中心處打孔以容許氣體流出之蓋子覆蓋 該盤,以將樣品包膠。將樣品在氮下以100°C /分鐘之速率 從0°C加熱至450°C (循環1),其後以100°C分鐘之速率冷卻。 立即以100°C /分鐘之速率從0°C至450°C操作第二循環(重 複循環1)。交聯溫度是從第一循環測定。 FTIR分析:使用Nicolet Magna 550 FTIR分光計以透射模式 -89- (83) (83) 200424228 發明說明續頁 取得FTIR光譜。基材背景光譜是在未經塗佈之基材上取得 '薄肤光缙疋使用基材作為背景而取得。其後分析薄膜光 譜中波♦位置和強度。 介電常數是藉在熟化層上塗佈一層鋁薄膜, 繼 < 在1 MHz進行定容-電壓測量並以層厚度為基礎計算k 值。 玫-ϋ-ϋ移溫度(T&1 :薄膜的破璃轉移溫度是藉測量如溫 度之函數般的薄膜應力而測定。薄膜應力量測是在KLA 3220 Flexus上進行。在薄膜量測前,將未經塗佈之晶圓在 500 C退火60分_趣,避免任何由於晶圓本身應力鬆弛之誤 差。其後將晶圓沉積欲測試之材料並經過所要必要的方法 步驟處理。接著將晶圓置於應力規内,其測量晶圓如溫度 的函數般彎曲。該儀器計算應力相對溫度的圖,限制條件 為晶圓厚度和薄膜厚度係已知。將結果以圖式顯示。為了 測定Tg值,畫一條水平正切線(在應力相對溫度圖上斜率 值是0)。Tg值是圖和水平正切線交叉的地方。 倘若Tg是在¥吏用最大溫度之第一溫度循環後測定,則應 該提出,因為了測量法本身可以影響Tg。(As shown), NANOGLASS® E products sold by Honeywell International Inc.'s; silicone silsesquioxane (as commonly assigned to world patent No. 01/29052 -85- 200424228 (79) Description of the invention continued on page number General); and fluorosilsesquioxane (as taught by the commonly assigned World Patent No. 01/29141), the entirety of which is incorporated herein by reference. Embodiment Analytical method of probing test 1-Proton NMR '. 2-5 mg of a sample of the material to be analyzed is placed in an NMR test tube. Add about 0 · 7 Aisheng to gas imitation. The mixture was shaken by hand to dissolve the material. It was then analyzed using Varian 400 MHz NMR. Peptide layer folding method (GPC): Waters 2690 separation mold with Water 996 diode array and water 410 differential refractometer detector was used for separation. Separation was performed on two: PLgel 3m Mixed-E 300x7.5mm column with chloroform flowing at 1ml / min. The 25 liter solution was performed twice at a concentration of about 1 mg / ml. Good reproducibility was observed. The column was scaled to a relative monodisperse polystyrene standard with a molecular weight between 20,000 and 500. Nine different components with lower molecular weight standards are capable of dissolving ', which is equivalent to 9 styrene in the butyl monomer in the oligomer. The logarithm of the peak molecular weight of the standard fits the cubic polynomial of the elution time. The ratio of the full width from half to the maximum value to the average dissolution time of toluene is < i The absorbance of the following formulations 1 and 2 is maximum at about 284 nm. Chromatograms have similar shapes at absorbances at wavelengths below about 300 nm. The results present here are equivalent to 254 nm absorbance. The peaks are identified by the molecular weight of the polystyrene that is simultaneously analyzed. These values should not be considered as a measure of the molecular weight of Preparations 1 and 2 oligomers. Higher oligomers, trimers, dimers, oligomers, and incomplete -86-(80) (80) 200424228 invention descriptions that can be successively separated over gradually increasing time can be quantified. Each component is wider than that observed for monodisperse species. Analyze this width from the full width in minutes at half the crest maximum. In order to broaden the calculation of the instrument, we calculated that the width is corrected = [width observation 2-width instrument 2] 1/2 where the width meter g is the observation width of toluene, and the toluene < ratio is corrected by the peak dissolution time. The peak width is converted to the molecular weight width via this scale curve and compared with the Bossin molecular weight width. Because the molecular weight of the acetofluorene oligomer is proportional to the square of its size, the relative molecular weight width can be converted into the relative oligo-oligomer size by dividing by two. This step explains the differences in the molecular configuration of the two. — [: The initial measurement of T 丨 shows the maximum value of 4 s, so the cycle time thus represents the quantitative result. All samples were dissolved in CDCh and 4000 scans were collected. DEPT designates c, CH, and CH # CH3. DEPT clearly recognizes that CH2 is located at 41 ppm, and assigns it to the three non-cantilevered neighbors on the adamantane, and CH is located at 30 ρρη in the unsubstituted position. Adjacent cantilevered leftover CH2 appeared at 46-48 ppm. Similarly, quaternary carbon at 35 ppm and CH at 31.5 ppm; can be regulated to tertiary butyl. In the aromatic region, peak groups between 120 and 123.5 are clearly non-protonated aromatic compounds. Based on chemical shifts, we attribute these to bromoaromatic carbons. We expect that the aromatic ring carbon atom 'quaternary aromatic compound attached to an aliphatic group (in this case, adamantane) is in the range of 45 to 55 ppm. There are more Bossins in some spectra at about 14, 23, 29, and 31.5 ppm. These can be attributed to the amount of heptane I used to clean the sample. The relative amount of heptane burned generally varies from -87 to 200424228 (81). We did not quantify heptane because it is not important for final performance. NMR conditions: • High resolution 13C NMR spectra were obtained on Varian Unity Inova 400. • 13C frequency: 100.572 MHz. • Use WALTZ adjustment to depolarize the gate 1Η. • Spectral width: 25 kHz. • π / 2 pulse at 13C-13ps. • Cycle time: 20 seconds. • #Data points: 1_00032, 2 second acquisition time. • 0 is filled at 131072 points of FT. • 1 Hz exponential flattening. Liquid chromatography-mass spectrometry (LC-MS) · This analysis was performed using the Atmospheric Pressure Ionization (API) interface unit, using a Hewlett-Packard 1050 series HPLC system as the chromatographic entrance, at Finnigan / MAT TSQ7000 three-stage quadrupole On a mass spectrometer system. Obtain mass spectrum ion current and variable single-wave g-long ultraviolet data for time-intensity chromatogram. Chromatography was performed on a Phenomenex Luna 5 micron phenyl-hexyl column (250 x 4.6 mm). Samples are automatically injected between 5 and 20 microliters of concentrated condensate in tetrahydrofuran and without tetrahydrofuran. The preferred formulation of the concentrated sample concentrate for analysis was dissolved in tetrahydrooctane at about 5 mg of solid product per milliliter for 10 microliters of injection. The mobile phase flow through the column was 1.0 ml / min acetonitrile / water, the first 1 minute was 70/30, after which the gradient was arranged to 100% acetonitrile at 10 minutes and held for 40 minutes. -88- 200424228 (82) Description of the Invention Continued In separate experiments, both positive ionization and negative ionization recorded Atmospheric Pressure Chemical Ionization (APCI) mass spectra. Positive APCI is more informative about the molecular structure of these final products. It provides protonated pseudomolecular ions, including additions to the acetonitrile matrix. APCI corona discharge is 5 microamperes, positive ionization is about 5 kV, and negative ionization is about 4 kV. Maintain the heated capillary wire at 200 ° C and the evaporator battery at 400 ° C. The ion detection system after quadrupole mass analysis was set to a voltage of 15 kV conversion double doubling electrode and 1500 V electronic amplifier. Mass spectra for negative ionization are typically recorded from about m / z 50 to 2000 a.m.u. at 1.0 sec / scan, and for positive ionization start at about m / z 150_a.m.u. In individual positive ion experiments, both scan up to 2000 a.m.u. in the low key / scale mode and up to 4000a.m.u in the high key / scale mode. Differential Scanning Calorimetry (DSC): DSC measurements are performed using a TA Instruments 2920 Differential Scanning Calorimeter with a controller and related software. The analysis was performed using a standard DSC battery (inert atmosphere: 50 mL / min nitrogen) over a temperature range of 250 ° C to 725 ° C. Liquid nitrogen is used as a source of cooling gas. Using a Mettler Toledo analytical balance with an accuracy of ± 0.00 gram, a small sample (10-12 mg) was weighed into an automatic DSC aluminum sample pan (part # 990999-901). The tray was covered with a lid previously punched in the center to allow gas to flow out to encapsulate the sample. The sample was heated under nitrogen at a rate of 100 ° C / min from 0 ° C to 450 ° C (cycle 1), and then cooled at a rate of 100 ° C minutes. Immediately operate the second cycle (repeat cycle 1) at a rate of 100 ° C / min from 0 ° C to 450 ° C. The crosslinking temperature was measured from the first cycle. FTIR analysis: Using Nicolet Magna 550 FTIR spectrometer in transmission mode -89- (83) (83) 200424228 Description of the Invention Continued FTIR spectra were obtained. The substrate background spectrum was obtained on an uncoated substrate. The position and intensity of the wave in the spectrum of the thin film were then analyzed. The dielectric constant is obtained by coating an aluminum thin film on the curing layer, and then performing a constant volume-voltage measurement at 1 MHz and calculating the k value based on the layer thickness. Rose-ϋ-transition temperature (T & 1: The glass transition temperature of a film is measured by measuring the film stress as a function of temperature. The film stress measurement is performed on the KLA 3220 Flexus. The uncoated wafer is annealed at 500 C for 60 minutes to avoid any errors due to stress relaxation of the wafer itself. Thereafter, the wafer is deposited with the material to be tested and processed through the necessary method steps. Then the crystal The circle is placed in a stress gauge, which measures the wafer as a function of temperature. The instrument calculates a graph of stress versus temperature with the limitation that the wafer thickness and film thickness are known. The results are shown graphically. To determine Tg Value, draw a horizontal tangent line (the slope value is 0 on the stress versus temperature graph). The Tg value is where the graph crosses the horizontal tangent line. If Tg is measured after the first temperature cycle using the maximum temperature, then It should be mentioned because the measurement method itself can affect Tg.

等溫重力計分析(ITGA)重量損央:總重量損失是在TAIsothermal Gravimeter Analysis (ITGA) Weight Loss Center: Total Weight Loss is in TA

Instmment 2950熱重力計分析器(TGA)上,併以 ΤΑ Instruments 熱分析控制器和相關軟體而進行。使用Platinel Π熱偶和 溫度是25°C至1000°C之標準爐,並以0.TC至100t /分鐘之 速率加熱。在TGA天平(解析度:0·1克;準確度:至±〇1%) 上稱重少量樣品(7至12毫克)並在一鉑盤上加熱。將樣品在 -90- 200424228 (84) 發明說明續頁 氮下以100毫升/分鐘之滌氣率加熱(60毫升/分鐘至爐且4〇 毫升/分鐘至天平)。將樣品在氮下於20°C平衡20分鐘,繼 之以10°C /分鐘之速率將溫度提高至200°C並保持在200°C 10分鐘。其後以l〇°C /分鐘將溫度快速提高至425°C並且保 持在425°C 4小時。計算在425°C 4小時期間之重量損失。 收縮:薄膜收縮度是藉測定方法前後之薄膜厚度而測量 。收縮度是以原始薄膜厚度的百分比表示。倘若薄膜厚度 減低,則收縮度是正值。真實的厚度測量在光學上是使用 J. A. Woollam M-88分光橢圓光度計進行。使用Cauchy模型計 算Psi和Delta的-最佳配合(關於Ellipsometry的細節能夠在例 如 1999年由 H· G. Thompkins and William A· McGahan,John Wiley and Sons,Inc.,之 ’’Spectroscopic Ellipsometry and Reflectometry” 中發現)。 折射率_·折射率量測是使用J.A. Woollam M-88分光橢圓光 度計和厚度測量一起進行。使用Cauchy模型計算Psi和Delta 的最佳配合。除非特別指出,折射率是在633毫微米處提 出(關於EllLp^ometry的細節能夠在例如1999年由H.G· Thompkins and ^William A. McGahan, John Wiley and Sons, Inc., 之 ’’Spectroscopic Ellipsometry and Reflectometry” 中發現)。 模數和硬度i模率和硬度是使用儀器識別測試測量。量 測是使用 MTS Nanoindenter XP (MTS Systems Corp·,Oak Ridge, TN)進行。明確而言,使用連續剛性測量法,其使得與其 從未載入之曲線測量不連續值,能夠正確且連續測定模數 和硬度更恰當一點。系統是使用以72±3.5 Gpa之公稱模數 200424228 (85) 發明說明續頁 稠合之秒石計算。稠合矽石之模數是從5〇〇至1000毫微米 識別深度間之平均值得到。對於薄膜而言,模數和硬度值 是從模數相對伸度曲線的極小值得到,典型上是在厚度的 5至15%之間。 ¥ K試·膠帶測試是依據ASTM D3359-95的指導方針進 行。根據以下將一光柵轉錄為介電層。膠帶測試是以下面 的方式橫過光柵標示進行:(1)將一片膠帶(最好是Sc〇tch 牌#3m600-l/2xl296)置於目前的層上,並向下緊壓以使得良 好接觸;且(2)接著將膠帶迅速拉除且平均以相對層表面 180°之角度。倘-·若層維持在晶圓上原封不動在晶圓上,則 認定樣品通過,或者倘若部份或全部薄膜隨膠帶被拉起, 則失敗。 胤釘拉起-.測試_··將塗佈環氧樹脂之圖釘接附於含本發明 之層的晶圓表面。在晶圓背面應用一陶瓷背材板以避免基 材彎曲和在圖釘邊緣不適當的應力集中。其後藉使用標準 拉起程序步驟之測試裝置將圖釘沿著與晶圓垂直的方向 拉起。其後記^錄在失敗點和界面位置施加應力。 盡..溶劑.主相與溶劑之相容性是藉測量溶劑處理前 後之薄膜厚度、折射率、FTIR光譜及介電常數而測定。對 於一相容性溶劑而言,應該觀察不到重要的變化。 製劑: 1備1 -製備熱固性成分(a)(此處引用為,,ρι”) 步驟卜):製備1,3,5,7-四(3’/4’-溴苯基)金剛烷(在圖1八中表 示)、1,3/‘雙[1,3,,5’_三(3,,/4,,-溴苯基)金剛烷_7,_基]苯(在圖 -92- 200424228 發明說明績頁 (86) 1C中表示)和至少雙{3,/4,-[Γ,3”,5,,-三(3,,,/4,,,-溴苯基)金 剛烷-7',基]苯基卜5,7-雙(3,,,,/4,,,,-溴苯基)金剛烷(在圖1C中表 示)之混合物(集體是"Ρ1步驟⑷產物π)。 將一第一反應容器裝載金剛烷(200克)、溴苯(1550毫升) 和三氯化鋁(50克)。將反應混合物藉恒溫水浴加熱至40°C 。以4-6小時將三級丁基溴(1206克)緩慢添加於反應混合物 。將反應混合物在40°C攪拌過夜。 將一第二反應容器裝載1000毫升水性氯化氫(5% w/w) ° 將第一反應容器的内容物逐漸卸入第二反應容器’同時藉 外部冰浴將反屬混合物維持在25-35°C。分離有機相(深褐 色下層相)並以水(1〇〇〇毫升)清洗。保持約1700毫升之有機 相。 將一第三反應容器裝載20·4公升石油醚(主要是沸騰範 圍80°C -ll〇°C之異辛烷)。以1小時將第二反應容器之内容 物緩慢添加至第三反應容器。將所產生之混合物攪拌至少 1小時。濾除沉澱物並將濾塊以每次300毫升上述之石油醚 清洗二次。將¥青洗之濾塊在45°C和40毫巴乾燥過夜。P1步 驟(a)產物產率二是407克乾燥重量。在以下圖式1A至1C展示 本反應。圖1A表示產生的單體。圖1B表示產生的一般性二 聚物和較高的產物,同時圖1C表示被圖1B結構覆蓋所產生 之特定二聚物和三聚物。 使用包括LC-MS、NMR 13C和GPC之分析技術識別產物。 LC-MS顯示產物是:一#單骨豊和寡聚星^^匕I物#金岡D完 核心之錯合物混合物。下表表示經識別之結構(Ad==金剛燒 ;Ph=C6H6; Βι*=溴;t-Bu=-C(CH3)3): -93- 200424228 (87) 發明說明續頁 1E1步騾(a)產物之HPLC-MS之分析 HPLC滞留時間 M +波♦ 提出的結構 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br5(t-Bu) 16 828 AdPh5Br4 16.3 908 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4(t-Bu) 17.3 886 AdPh4Br5(t-Bu) 18.4 864 AdPh4Br4(t-Bu)2 寬〜19 + 1040 Ad2Ph5Br5 1114 Ad2Ph7Br4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 Ad2Ph7Br5 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2Ph6Br7 1348 Ad2P hyB Γ7 1426 Ad2Ph7Br8 寬〜21 + 1 1096 Ad2Ph5Br5(t-Bu) 1172 Ad2Ph6Br5(t-Bu) 1174 Ad2Ph5Br6(t-Bu) 1250 Ad2Ph6Br6(t-Bu) 1326 Ad2Ph7Br6(t-Bu) 1328 Ad2Ph6Br7(t-Bu) 1404 Ad2Ph7Br7(t-Bu) 1482 Ad2Ph7Br8(t-Bu) -94- 200424228 (88) 發明說明續頁 NMR 13C分析導致以下波峰歸屬Instmment 2950 thermogravimetric analyzer (TGA), and performed with TA Instruments thermal analysis controller and related software. A Platinumel Π thermocouple and a standard furnace with a temperature of 25 ° C to 1000 ° C were used and heated at a rate of 0.TC to 100t / min. A small sample (7 to 12 mg) was weighed on a TGA balance (resolution: 0.1 grams; accuracy: to ± 0.1%) and heated on a platinum pan. The sample was heated at -90- 200424228 (84) Invention Description Continued at a scrubbing rate of 100 ml / min under nitrogen (60 ml / min to the furnace and 40 ml / min to the balance). The sample was equilibrated under nitrogen at 20 ° C for 20 minutes, and then the temperature was increased to 200 ° C at a rate of 10 ° C / minute and held at 200 ° C for 10 minutes. Thereafter, the temperature was rapidly increased to 425 ° C at 10 ° C / minute and maintained at 425 ° C for 4 hours. Calculate weight loss over 4 hours at 425 ° C. Shrinkage: Film shrinkage is measured by the film thickness before and after the measurement method. Shrinkage is expressed as a percentage of the original film thickness. If the film thickness is reduced, the shrinkage is positive. The true thickness measurement was optically performed using a J. A. Woollam M-88 spectrophotometer. The Cauchy model is used to calculate the optimal fit of Psi and Delta (Details on Ellipsometry can be found in, for example, 1999 by H.G. Thompkins and William A. McGahan, John Wiley and Sons, Inc., "Spectroscopic Ellipsometry and Reflectometry" Found). Refractive index _ · Refractive index measurement is performed together with JA Woollam M-88 spectrophotometer and thickness measurement. Cauchy model is used to calculate the best combination of Psi and Delta. Unless otherwise specified, the refractive index is at 633 Proposed at the nanometer (details on EllLp ^ ometry can be found, for example, in 1999 by HG · Thompkins and ^ William A. McGahan, John Wiley and Sons, Inc., "Spectroscopic Ellipsometry and Reflectometry"). Modulus and hardness i Modulus and hardness are measured using instrument identification tests. Measurements were performed using MTS Nanoindenter XP (MTS Systems Corp., Oak Ridge, TN). Specifically, the continuous rigidity measurement method makes it possible to measure the modulus and hardness more accurately and continuously than to measure the discontinuity value from an unloaded curve. The system is calculated using a nominal modulus of 72 ± 3.5 Gpa 200424228 (85) Continued description Condensed second stone. The modulus of the fused silica is obtained by averaging from 500 to 1,000 nanometers of discrimination depth. For films, the modulus and hardness values are obtained from the minimum values of the modulus versus elongation curve, typically between 5 and 15% of the thickness. ¥ K test and tape test are performed according to the guidelines of ASTM D3359-95. A grating is transcribed into a dielectric layer according to the following. The tape test is performed across the grating markings in the following way: (1) Place a piece of tape (preferably Scotch brand # 3m600-l / 2xl296) on the current layer and squeeze down to make good contact ; And (2) the tape is then quickly removed and averaged at an angle of 180 ° relative to the surface of the layer. If the layer remains on the wafer intact on the wafer, the sample is deemed to pass, or if some or all of the film is pulled up with the tape, it fails. Pin pull-up --- test _... Attach an epoxy-coated pin to the surface of a wafer containing the layer of the present invention. A ceramic backing plate is applied on the back of the wafer to avoid substrate bending and inappropriate stress concentration at the edges of the pins. Thereafter, the test pin is pulled up in a direction perpendicular to the wafer by a test device using standard pull-up procedure steps. Thereafter, the stress was applied at the failure point and the interface position. Exhaust. Solvent. The compatibility between the main phase and the solvent is determined by measuring the film thickness, refractive index, FTIR spectrum and dielectric constant before and after solvent treatment. For a compatible solvent, no significant changes should be observed. Formulation: 1 Preparation 1-Preparation of thermosetting ingredient (a) (herein, ρι ") Step b): Preparation of 1,3,5,7-tetrakis (3 '/ 4'-bromophenyl) adamantane ( (Shown in Figure 1)), 1,3 / 'bis [1,3,, 5'_tris (3 ,, / 4 ,,-bromophenyl) adamantane_7, _yl] benzene 92-200424228 invention description page (86) 1C) and at least double {3, / 4,-[Γ, 3 ", 5 ,,-tris (3 ,,, / 4 ,,,-bromophenyl) Adamantane-7 ′, yl] phenylb 5,7-bis (3 ,,,, / 4 ,,,,-bromophenyl) Adamantane (represented in Figure 1C) mixture Step ⑷ product π). A first reaction vessel was charged with adamantane (200 g), bromobenzene (1550 ml) and aluminum trichloride (50 g). The reaction mixture was heated to 40 ° C with a thermostatic water bath. Tertiary butyl bromide (1206 g) was slowly added to the reaction mixture over 4-6 hours. The reaction mixture was stirred at 40 ° C overnight. Load a second reaction vessel with 1000 ml of aqueous hydrogen chloride (5% w / w) ° Gradually unload the contents of the first reaction vessel into the second reaction vessel 'while maintaining the anti-mixture at 25-35 ° with an external ice bath C. The organic phase (dark brown phase) was separated and washed with water (1000 ml). An organic phase of about 1700 ml was maintained. A third reaction vessel was charged with 20.4 liters of petroleum ether (mainly isooctane with a boiling range of 80 ° C to 110 ° C). The contents of the second reaction vessel were slowly added to the third reaction vessel over 1 hour. The resulting mixture was stirred for at least 1 hour. The precipitate was filtered off and the filter cake was washed twice with 300 ml of the petroleum ether described above each time. The ¥ washed filter cake was dried at 45 ° C and 40 mbar overnight. The yield in step (a) of product P1 was 407 g dry weight. This reaction is shown in the following schemes 1A to 1C. Figure 1A shows the monomers produced. Figure 1B shows the general dimers and higher products produced, while Figure 1C shows the specific dimers and trimers produced by covering the structure of Figure 1B. The products were identified using analytical techniques including LC-MS, NMR 13C, and GPC. LC-MS showed that the product was a complex of a single monobloc and an oligomeric star. The following table shows the identified structure (Ad == King Kong fire; Ph = C6H6; Βι * = Bromo; t-Bu = -C (CH3) 3): -93- 200424228 (87) Description of the invention continued on 1E1 step 骡 ( a) HPLC-MS analysis of product HPLC retention time M + wave ♦ Proposed structure 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br5 (t-Bu) 16 828 16.P3 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4 (t-Bu) 17.3 886 AdPh4Br5 (t-Bu) 18.4 864 AdPh4Br4 1 (Ad-Ph4Br6 1114 Ad2Ph7Br4 1116 Ad2Ph6Br6P5 11 Ad2Ph4Br5 1118 Ad2P hyB Γ7 1426 Ad2Ph7Br8 wide ~ 21 + 1 1096 Ad2Ph5Br5 (t-Bu) 1172 Ad2Ph6Br5 (t-Bu) 1174 Ad2Ph5Br6 (t-Bu) 1250 Ad2Ph6Br6 (t-Bu) 1326 Ad2Ph7Br6 (t-Bu) 1328 Ad2Ph7Br6 (t-Bu) 1328 Bu) 1404 Ad2Ph7Br7 (t-Bu) 1482 Ad2Ph7Br8 (t-Bu) -94- 200424228 (88) Description of the invention Continued NMR 13C analysis results in the following peak assignment

13C NMR波峰位置,ppm 結構 153.6、151.8、151」、148.3、147.6 鍵結於金剛烷之四級芳族碳 136.0、134.5、134.2、133」、131·6 芳族C-H 、131.1、130.2、130.0、129.6、 129·3、128.5、126.9、123.8 123.1、123.0、122.9、122·6、121.4 芳族C-Br 、121.1、120.3 47.7 三取代金剛烷的三個c-h2 4δ.8 四取代金剛烷的c-h2 41.0 鄰近未取代金剛烷位置之 金剛烷的c-h2 39.3、39.0、38·9、38.4、38.1 金剛烷的四級(脂肪族)碳 35.2 三級丁基的四級(脂肪族)碳 31.4 三級丁基的c-h3 30 三取代金剛烷的C-H GPC分析結果1 -1,3,5,7-四(f/W-溴苯基)金剛烷(在圖3A中表示)之波峰分 子量約360 ; -1,3/4-雙[1,3,,5’-三(3’’/4’,-溴苯基)金剛烷-7,-基]苯(在圖30 中表示)之波峰分子量約620 ; -1,3-雙{374,-[1”,3’’,5”-三(3’"/4|"-溴苯基)金剛烷-7,,基]苯 基}-5,7-雙(3"’’/4’"’_溴苯基)金剛烷(在圖3C中表示)之波 峰分子量約900(肩部) -95- 200424228 (89) 發明說明續頁 步驟⑻:製備丨,3,5,7·四[3V4,-(溴苯基)苯基]金剛烷(在圖1D 中表示)、l,3/4-雙{1,3,,5,_三[3”/4"_(苯基乙炔基)苯基]金剛 -7 -基}表(在圖1F中表示)和至少13-雙(^,,^,,,^,-三 [3 /4 (苯基乙炔基)苯基]金剛烷_7"基]苯基卜5,7_雙 [3 /4 (苯基乙炔基)苯基]金剛烷(在圖1F中表示)之混合 物(集體是,,P1步驟⑻產物,,) 在氮下將一第一反應器裝載甲苯(15〇〇毫升)、三乙胺 (4000¾升)和以上製備之ρι步驟⑷產物(1〇〇〇克乾燥)。將混 合物加熱80。(:並添加雙(三苯基膦)二氯化鈀(π)(即 [Ph3P]2PdCl2)(7i5克)和三苯基膦(即[Ph2P]) (1 5克)。十分鐘 後,添加碘化銅(Ι)(7·5克)。 以三小時的時間,將苯基乙炔(75〇克)溶液添加於第一反 應器。將反應混合物在80。(:攪拌12小時以確認反應完全。 添加甲苯(4750毫升)。其後在減壓下和最大反應器内溫度 將落劑蒸除並將反應混合物冷卻至約5〇它。濾除溴化三乙 銨(約1600毫升)。將濾塊以甲苯清洗(每次5〇〇毫升)。將有 機相以1750毫·# HC1 (10w/w%),其後以水(2〇〇〇毫升)清洗。 於經洗之香機相添加水(1000毫升)、乙二胺四乙酸 (EDTA)(100克)和且二甲基乙二圬(2〇克)。添加約ι5〇毫升 NH4OH (25w/w%)以達到pH 9。將反應混合攪拌1小時。分離 有機相並以水(1〇〇〇毫升)清洗。藉由一迪恩·史達克 (Dean-Stark)分水器共沸乾燥直到水停止流出。添加過濾劑 白雲石(100克)(商標Tonsil)。將混合物加熱至i〇〇°C 30分鐘。 以具細孔之濾布濾除白雲石並將剩餘物以甲苯(2〇〇毫升) 200424228 (90) 發明說明續頁 清洗。添加氧化矽(100克)。將反應混合物攪拌3〇分鐘。以 具細孔之濾布濾除矽石並將剩餘物以甲苯(2〇〇毫升)清洗 。添加2500¾升水性NH3 (2〇w/w%)和12 5克N•乙醯半胱胺酸 。將相分離。將有機相以1000亳升HC1 (10% w/w)清洗,繼 之以水清洗二次(每次1000毫升)。在約12〇毫巴之減壓下蒸 除甲苯。鍋溫不超過約7〇。〇。留下一深褐色黏稠油狀物 (1500-1700¾升)。於鍋内的熱質量塊添加乙酸異丁酯(25〇〇 毫升)並形成一深褐色溶液(4250毫升)。 將一第二反應容器裝載17000毫升石油醚(主要是沸騰範 圍80 C -110 C之異辛烷)。以丨小時將第一反應容器之内容 物緩慢添加至’二反應容器並攪掉過夜。過濾沉澱物並將 滤塊以每次500毫升上述之石油醚清洗。將清洗之濾塊在 45 C和在80 C 5小時乾燥。pi步驟(b)產物產率是85〇-9〇〇克 。在以下圖式1D至1F展示本反應。圖1D表示產生的單體。 圖1E表示產生的一般性二聚物和較高的產物,同時圖1F 表示被圖IF結構覆蓋所產生之特定二聚物和三聚物。 使用包括LC-MS、NMR 4、NMR 13C、GPC和FTIR之分析技 術識別產物。y LC-MS顯示类物是一種單體和寡聚星狀化合物與金剛 烷核心之錯合物混合物。下表表示經識別之結構(Ad=金剛 烷蘢狀;T是二苯乙炔基-PhC=CC^H4- ; t.Bu=-C(CH3)3): # M+波峰 提出的結構 la 664 AdT3H 2a 840 AdT4 3a 720 Ad(H)T3(t-Bu) 4a,b 896 AdT4(t-Bu) 5a,b 1326 Ad2T6 6a’b 1402 AdT6(C6H4) 200424228 (91) 發明說明續頁 a這些一般結構皆觀察到MW±100a.u.(加減PhC=C-基)之類似 物 b這些結構觀察到無二苯乙炔基懸臂(-176a.u.)之類似物 咕NMR識別芳香族質子(6.9-8 ppm,2·8±0·2Η)和金剛烷籠狀 質子(1.7-2.7 ppm,1±0·2Η)。 13C NMR分析導致以下波峰歸屬:13C NMR peak position, ppm structures 153.6, 151.8, 151 ″, 148.3, 147.6 bonded to the quaternary aromatic carbons 136.0, 134.5, 134.2, 133 ″, 131.6 aromatic CH, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 123.1, 123.0, 122.9, 122.6, 121.4 Aromatic C-Br, 121.1, 120.3 47.7 Three c-h2 4δ of trisubstituted adamantane c-h2 41.0 c-h2 of the adamantane adjacent to the unsubstituted adamantane 39.3, 39.0, 38.9, 38.4, 38.1 quaternary (aliphatic) carbon of adamantane 35.2 quaternary (aliphatic) tertiary butyl CH GPC analysis result of c-h3 30 tri-substituted adamantane with 31.4 carbons. 1 -1,3,5,7-tetra (f / W-bromophenyl) adamantane (represented in FIG. 3A) The peak molecular weight is about 360; -1,3 / 4-bis [1,3,, 5'-tris (3 '' / 4 ',-bromophenyl) adamantane-7, -yl] benzene (in Figure 30 The molecular weight of the peak is about 620; -1,3-bis {374,-[1 ”, 3 '', 5” -tris (3 '" / 4 | " -bromophenyl) adamantane-7, , Yl] phenyl} -5,7-bis (3 " '' / 4 '"' _ Phenyl) adamantane (represented in FIG. 3C) has a peak molecular weight of about 900 (shoulder) -95- 200424228 (89) Description of the invention Continuation step ⑻: Preparation 丨, 3,5,7 · Tetra [3V4,-( Bromophenyl) phenyl] adamantane (represented in FIG. 1D), 1,3 / 4-bis {1,3,, 5, _tri [3 ”/ 4 " _ (phenylethynyl) phenyl] Adamantine-7-yl} table (indicated in FIG. 1F) and at least 13-bis (^ ,, ^ ,,, ^,-tris [3/4 (phenylethynyl) phenyl] adamantane_7 " ] Phenylbenzene 5,7_bis [3/4 (phenylethynyl) phenyl] adamantane (represented in Figure 1F) (collectively, the product of step P1 ,,) The first reactor was charged with toluene (1500 ml), triethylamine (4000 ¾ liters), and the product of the above-prepared step ⑷ (1000 g dry). The mixture was heated to 80. (: and bis (triphenyl) was added Phosphine) palladium dichloride (π) (ie [Ph3P] 2PdCl2) (7i5 g) and triphenylphosphine (ie [Ph2P]) (15 g). After ten minutes, copper (I) iodide was added ( 7.5 g). A solution of phenylacetylene (750 g) was added to the first reactor over a period of three hours.The reaction mixture was at 80. (: Stir for 12 hours to confirm that the reaction is complete. Toluene (4750 ml) was added. After that, the solvent was distilled off under reduced pressure and the maximum reactor temperature and the reaction mixture was cooled to about 50. The tribromide was filtered off Ethyl ammonium (approximately 1600 ml). The filter block was washed with toluene (500 ml each time). The organic phase was 1750 milli # HC1 (10 w / w%), followed by water (2000 ml) Wash. Add water (1000 ml), ethylenediaminetetraacetic acid (EDTA) (100 g) and dimethylethylene dioxane (20 g) to the washed fragrance machine phase. Add about 50 ml of NH4OH (25w) / w%) to reach pH 9. The reaction was mixed and stirred for 1 hour. The organic phase was separated and washed with water (1000 ml). An azeotrope was passed through a Dean-Stark trap Dry until the water stops flowing. Add filter dolomite (100 g) (trademark Tonsil). Heat the mixture to 100 ° C for 30 minutes. Filter the dolomite through a pore filter cloth and remove the residue with toluene ( 200 ml) 200424228 (90) Description of the invention Continued cleaning. Add silica (100 g). Stir the reaction mixture for 30 minutes. A filter cloth with fine pores was used to remove the silica and the residue was washed with toluene (200 ml). 2,500 liters of aqueous NH3 (20 w / w%) and 125 g of N • acetamidinecysteine were added. The phases were separated. The organic phase was washed with 1000 liters of HC1 (10% w / w), followed by washing twice with water (1000 ml each time). The toluene was distilled off under reduced pressure of about 120 mbar. Pot The temperature does not exceed about 70.0. A dark brown viscous oil (1500-1700 ¾ liters) is left. Add isobutyl acetate (2500 ml) to the hot mass in the pot and form a dark brown solution ( 4250 ml). Load a second reaction vessel with 17,000 ml of petroleum ether (mainly isooctane with a boiling range of 80 C -110 C). Slowly add the contents of the first reaction vessel to the 'second reaction vessel and Stir off overnight. Filter the precipitate and wash the filter cake with 500 ml of petroleum ether as described above. The cleaned filter cake is dried at 45 C and 80 C for 5 hours. The yield of pi step (b) is 85- 900 g. The reaction is shown in the following schemes 1D to 1F. Fig. 1D shows the monomers produced. Fig. 1E shows the general dimers produced and comparisons. High product, while Figure 1F shows the specific dimers and trimers produced by covering the structure of Figure IF. The products were identified using analytical techniques including LC-MS, NMR 4, NMR 13C, GPC, and FTIR. LC-MS It shows that the compound is a complex of monomer and oligomeric star compound and adamantane core. The following table shows the identified structure (Ad = adamantidine-like; T is diphenylethynyl-PhC = CC ^ H4 -; t.Bu = -C (CH3) 3): # M + wave structure proposed by la 664 AdT3H 2a 840 AdT4 3a 720 Ad (H) T3 (t-Bu) 4a, b 896 AdT4 (t-Bu) 5a, b 1326 Ad2T6 6a'b 1402 AdT6 (C6H4) 200424228 (91) Description of the invention continued on a. These general structures are observed with MW ± 100a.u. (plus or minus PhC = C-based). NMR of phenylethynyl cantilever (-176a.u.) recognizes aromatic protons (6.9-8 ppm, 2.8 ± 0 · 2Η) and adamantane cage protons (1.7-2.7 ppm, 1 ± 0 · 2Η). 13C NMR analysis results in the following peak assignments:

13C NMR波峰位置,ppm 結構 151.3、151、150、149.9、149.8 鍵結於金剛烷之四級芳族碳 、149.3-' 149·2 132-131、128·5、125·3、125·2 C-H芳族碳 129.6- 129.1 芳族環碳 123.7-122.9、121.8、121」、120.9 接附於乙炔之四級芳族碳 93.6 四級乙炔碳(在二取代環上) 90.7、90·3、90.1、89.7、89.5 四級乙炔碳 、89.4、89.1、88.8、88.7 47.5$ 46.7 四取代金剛烷之c-h2 47.1 四取代金剛烷之c-h3 41 三取代金剛烷之c-h2 39.6 三取代金剛烷之c-h3 39.5、39.2-39.0、38.6、38·2、 四取代金剛燒之四級碳 35 32 芳族環上三級丁基之c-h3 30 三取代金剛烷之C-H -98- 200424228 ㈣ I發明說明續"ΐ QPC分析結i · ’’ ’7四[3 74 _(苯基乙炔基)苯基]金剛烷(在圖3D中表 示)之波峰分子量約744 ; - 1,3/4-雙 Μ,v — ’ ’ 一 苯基乙块基)苯基]金剛燒·7,_ 基]苯(在圖3F中表示)之波辛分子量約13〇〇; 1’3雙{3 /4 -[1,3’’,5”·三[3,,,/4’’,_(苯基乙炔基)苯基]金剛烷 ]苯基}5,7-雙[3””/4""-(苯基乙炔基)苯基]金剛烷(在 圖3F中表示)之波峰分子量約1680 (肩部) 從GPC得知’單體分子和小分子對寡聚物化合物之比例是 50±5% 0 ' FTIR顯示以下: ----_____ 以cm·1表示之波峰(浊峰強念 結構 3050(弱) __芳族C-H _ 2930(弱) 金剛烷上脂肪族C-H 2200(非常弱、 ---L_ 乙炔 1600(非常強) 芳族C=C 15,0(強) 145(F(中等) 1350(中等) 製備2 -製備JL..固.性成分faH此處引用為"P2,,、 步驟(a):製備1,3,5,7·四(3,/4,-溴苯基)金剛烷(在圖1A中表 示)、1,3/4-雙[1’,3*,5’_三(3”/4,,-溴苯基)金剛烷-7,·基]苯(在圖 1C中表示)和至少 1,3-雙{3,/4’-[1,,,3,,,5”-三(3,,,/4,"-溴苯基)金 剛烷-7·’基]苯基}-5,7-雙(3’"’/4”π-溴苯基)金剛烷(在圖1C中表 -99- 200424228 (93) 發明說明續頁 示)之混合物(集體是,,P2步驟(a)產物”)。 將一第一反應容器裝載1,4-二溴苯(587.4克)和三氣化鋁 (27·7克)。將反應混合物藉恒溫水浴加熱至90°C並無攪拌 維持於此溫度1小時,再攪摔1小時。將反應物冷卻至50°C 。於冷卻反應混合物添加金剛烷(113.1克)。以4小時將三 級丁基溴(796.3克)添加於反應混合物。將反應混合物再攪 摔12小時。 將一第二反應容器裝載HC1 (566毫升,10%水性w/w)。將 第一反應容器的内容物逐漸卸入第二反應容器,同時藉外 部冰浴將反應j昆合物維持在25-35°C。反應質量是一淡褐 色懸浮液。有機相是一深褐色下層相並將其與反應混合物 分離。將分離之有機相以水(380毫升)清洗。此清洗後,剩 下約800毫升之有機相。 將一第三反應容器裝載庚烷(5600毫升)。以1小時將第二 反應容器之内容物緩慢添加至第三反應容器。將懸浮液攪 拌至少4小時並濾除沉澱物。將濾塊以每次300毫升庚烷清 洗二次。P2步#⑷產物產率是526.9克(潮濕)和乾燥470·1克 (乾燥)。 : 使用包括LC-MS、NMR 13C和GPC之分析技術識別產物。 LC-MS顯示產物是一種單體和寡聚星狀化合物與金剛烷 核心之錯合物混合物。下表表示經識別之結構(Ad=金剛烷 ;Ph=C6H5; Br=溴;t-Bu=-C(CH3)3): 200424228 (94) 發明說明續頁 IE2步驟(a)產物之HPLC-MS分析 HPLC滯留時間 M+波峰 提出的結構 21.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br5(t-Bu) 16 828 AdPh5Br4 16.3 908 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4(t-Bu) 17.3 886 AdPh4Br5(t-Bu) 18.4 864 AdPh4Br4(t-Bu)2 寬〜19 + 1040 Ad2Ph5Br5 1114 Ad2P hyB Γ4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 Αί^ΡΙίγΒ Γ5 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2Ph6Br7 1348 Ad2Ph7Br7 1426 Ad2Ph7Br8 寬〜2 1 +1 1096 Ad2Ph5Br5(t-Bu) 1172 Ad2Ph6Br5(t-Bu) 1174 Ad2Ph5Br6(t-Bu) 1250 Ad2Ph6Br6(t-Bu) 1326 Ad2Ph7Br6(t-Bu) 1328 Ad2Ph6Br7(t-Bu) 1404 Ad2Ph7Br7(t-Bu) 1482 Ad2Ph7Br8(t-Bu)13C NMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8 Bonded to quaternary aromatic carbon of adamantane, 149.3- '149 · 2 132-131, 128 · 5, 125 · 3, 125 · 2 CH Aromatic carbons 129.6- 129.1 Aromatic ring carbons 123.7-122.9, 121.8, 121 ″, 120.9 Four-stage aromatic carbons attached to acetylene 93.6 Four-stage acetylene carbons (on disubstituted rings) 90.7, 90 · 3, 90.1 89.7, 89.5 quaternary acetylene carbon, 89.4, 89.1, 88.8, 88.7 47.5 $ 46.7 c-h2 of tetra-substituted adamantane 47.1 c-h3 of tetra-substituted adamantane c-h2 of tri-substituted adamantane 39.6 of tri-substituted adamantane c-h3 39.5, 39.2-39.0, 38.6, 38.2, quaternary carbons of tetra-substituted adamantine 35 32 tertiary butyl on aromatic ring c-h3 30 tri-substituted adamantan CH -98- 200424228 ㈣ I Description of the Invention Continued " PC QPC Analysis Results · "7 Tetrakis [3 74 _ (phenylethynyl) phenyl] adamantane (represented in Figure 3D) has a peak molecular weight of about 744;-1, 3/4 -BisM, v — '′ -phenylethylblock) phenyl] adamantine · 7, _yl] benzene (represented in FIG. 3F) has a Boxin molecular weight of about 13,000; 1′3bis {3 / 4-[1,3 ', 5 "· tri [3 ,,, / 4", _ (phenylethynyl) phenyl] adamantane] phenyl} 5,7-bis [3 "" / 4 " "-( phenyl Ethynyl) phenyl] adamantane (represented in FIG. 3F) has a peak molecular weight of about 1680 (shoulder). It is known from GPC that the ratio of monomer molecules and small molecules to oligomeric compounds is 50 ± 5%. 0 FTIR Shows the following: ----_____ The peak in cm · 1 (turbid peak strong read structure 3050 (weak) __aromatic CH _ 2930 (weak) aliphatic CH 2200 on adamantane (very weak, --- L_ Acetylene 1600 (very strong) Aromatic C = C 15, 0 (strong) 145 (F (medium) 1350 (medium) Preparation 2-Preparation of JL .. Solid. Properties of faH are cited here as " P2 ,,, Step (A): Preparation of 1,3,5,7 · tetra (3, / 4, -bromophenyl) adamantane (represented in FIG. 1A), 1,3 / 4-bis [1 ', 3 *, 5 '_Tris (3 "/ 4 ,,-bromophenyl) adamantane-7, -yl] benzene (represented in Figure 1C) and at least 1,3-bis {3, / 4'-[1 ,,, 3 ,,, 5 ”-tris (3 ,,, / 4, " -bromophenyl) adamantane-7 · 'yl] phenyl} -5,7-bis (3' " '/ 4” π -Bromophenyl) adamantane ( Shown) of the mixture (93) Continued invention is described on page table -99-200424228 FIG 1C (collectively ,, P2 is step (a) product "). A first reaction vessel was charged with 1,4-dibromobenzene (587.4 g) and aluminum trioxide (27.7 g). The reaction mixture was heated to 90 ° C with a constant temperature water bath without stirring. The temperature was maintained at this temperature for 1 hour, and the mixture was stirred for 1 hour. The reaction was cooled to 50 ° C. To the cooled reaction mixture was added adamantane (113.1 g). Tributyl bromide (796.3 g) was added to the reaction mixture over 4 hours. The reaction mixture was stirred for another 12 hours. A second reaction vessel was charged with HC1 (566 ml, 10% aqueous w / w). The contents of the first reaction container were gradually discharged into the second reaction container, while the reaction mixture was maintained at 25-35 ° C by an external ice bath. The reaction mass was a light brown suspension. The organic phase is a dark brown lower phase and is separated from the reaction mixture. The separated organic phase was washed with water (380 ml). After this washing, about 800 ml of the organic phase remained. A third reaction vessel was charged with heptane (5600 ml). The contents of the second reaction vessel were slowly added to the third reaction vessel over 1 hour. The suspension was stirred for at least 4 hours and the precipitate was filtered off. The filter block was washed twice with 300 ml of heptane each time. The yield of P2 step # ⑷ product was 526.9 g (wet) and 470.1 g (dry) dry. : Identify products using analytical techniques including LC-MS, NMR 13C, and GPC. LC-MS showed that the product was a complex of monomeric and oligomeric star compounds with an adamantane core. The following table shows the identified structures (Ad = adamantane; Ph = C6H5; Br = bromo; t-Bu = -C (CH3) 3): 200424228 (94) Description of the invention Continued HPLC- MS analysis HPLC retention time M + peak proposed structure 21.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br4 41 6Br 616 908 AdPh5Br4 1808 -Bu) 17.3 886 AdPh4Br5 (t-Bu) 18.4 864 AdPh4Br4 (t-Bu) 2 wide ~ 19 + 1040 Ad2Ph5Br5 1114 Ad2P hyB Γ4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 Ad2P2P2P2Ph6Br2 〜2 1 +1 1096 Ad2Ph5Br5 (t-Bu) 1172 Ad2Ph6Br5 (t-Bu) 1174 Ad2Ph5Br6 (t-Bu) 1250 Ad2Ph6Br6 (t-Bu) 1326 Ad2Ph7Br6 (t-Bu) 1328 Ad2Ph6Br7 (t-Bu) 1404 Ad2Ph7 t-Bu) 1482 Ad2Ph7Br8 (t-Bu)

-101 - 200424228 (95) 發明說明續頁 NMR nC分析導致以下波峰歸屬:-101-200424228 (95) Description of the invention Continued NMR nC analysis results in the following peak assignments:

13C NMR波峰位置,ppm 結構 153·6、151.8、151.卜 148.3、147.6 鍵結於金剛燒之四級芳族碳 136.0、134.5、134.2、133.1、131.6 芳族C-H 、131」、130.2、130·0、129.6、129.3 、128.5、126.9、123.8 123.1、123.0、122.9、122.6、121·4 芳族C-Br 、121.1、120.3 47.7 三取代金剛烷的三個c-h2 -46.S 四取代金剛烷的c-h2 41.0 鄰近未取代金剛烷位置 之金剛烷的c-h2 39.3、39·0、38·9、38·4、38.1 金剛烷的四級(脂肪族)碳 35.2 三級丁基的四級(脂肪族)碳 31.4 三級丁基的c-h3 30 三取代金剛烷的C-H GPC分析結果3 -1,3,5,7-四(3〒/4^溴苯基)金剛烷(在圖3A中表示)之波峰分 子量約360 ; -1,3/4-雙[1’,3’,5’_三(3’’/4’’-溴苯基)金剛烷-7,-基]苯(在圖 3C中表示)之波峰分子量約570 ; -1,3-雙{3’/4·-[ 1Π,3Π,5Π-三(3,,74…-溴苯基)金剛烷-7,,基]苯 基}-5,7-雙(3”’74””_溴苯基)金剛烷(在圖3C中表示)之波 峰分子量約860(肩部)。 200424228 (96) 發明說明績頁 步騾(b):製備1,3,5,7-四[3V4,-(溴苯基)苯基]金剛烷(在圖 1D中表示)、1,3/4-雙[1,3,,5,-三[3"/4,,-(苯基乙炔基)苯基]金 剛垸-71-基]苯(在圖1F中表示)和至少ι,3-雙{ 3,/4,-[ 1,·,3,·,5Π-三[3"74m-(苯基乙炔基)苯基]金剛烷-7"基]苯基卜5,7-雙 [3π74"π-(苯基乙炔基)笨基]金剛烷(在圖1F中表示)之混合 - 物(集體是ΠΡ2步騾(b)產物”) ·: 在氮下將一第一反應器裝載甲苯(698毫升)、三乙胺(1860 · 毫升)和以上製備之P2步驟⑷產物(465克乾燥)。將混合物 鲁 加熱80 °C並於反應混合物添加鈀-三苯基膦錯合物(即 (Ph(PPh3)2Cl2)K4.2克)。等待10分鐘後,於反應混合物添加 J:-三苯基膦(即PPh3)(8.4克)。再等待十分鐘後,於反應混合 物添加碘化銅(1)(4.2克)。13C NMR peak position, ppm structure 153.6, 151.8, 151. 148.3, 147.6 bonded to the fourth-order aromatic carbon 136.0, 134.5, 134.2, 133.1, 131.6 aromatic CH, 131 ″, 130.2, 130 · 0, 129.6, 129.3, 128.5, 126.9, 123.8 123.1, 123.0, 122.9, 122.6, 121.4 Aromatic C-Br, 121.1, 120.3 47.7 Three c-h2 -46.S trisubstituted adamantane C-h2 41.0 c-h2 of the adamantane adjacent to the unsubstituted adamantane position 39.3, 39.0, 38.9, 38.4, 38.1 aquatane (aliphatic) carbon 35.2 amantane Grade (aliphatic) carbon 31.4 tert-butyl c-h3 30 tri-substituted adamantane CH GPC analysis results 3 -1,3,5,7-tetrakis (3〒 / 4 ^ bromophenyl) adamantane (in The peak molecular weight shown in Figure 3A) is about 360; -1,3 / 4-bis [1 ', 3', 5'_tris (3 '' / 4 ''-bromophenyl) adamantane-7,-group ] Benzene (represented in FIG. 3C) has a peak molecular weight of about 570; -1,3-bis {3 '/ 4 ·-[1Π, 3Π, 5Π-tris (3,, 74… -bromophenyl) adamantane- 7,, yl] phenyl} -5,7-bis (3 "'74" "_ bromophenyl) adamantine (Indicated in FIG. 3C) The peak molecular weight is about 860 (shoulder). 200424228 (96) Description of the invention Step (b): Preparation of 1,3,5,7-tetra [3V4,-(bromophenyl) Phenyl] adamantane (shown in Figure 1D), 1,3 / 4-bis [1,3,5, -tri [3 " / 4 ,,-(phenylethynyl) phenyl] adamantine- 71-yl] benzene (represented in FIG. 1F) and at least ι, 3-bis {3, / 4,-[1, ·, 3, ·, 5Π-tri [3 " 74m- (phenylethynyl) benzene Radical] adamantane-7 " yl] phenyl5,7-bis [3π74 " π- (phenylethynyl) benzyl] adamantane (represented in Fig. 1F)-a compound (collectively Π 2 step) (B) Product ") ·: A first reactor was charged with toluene (698 ml), triethylamine (1860 · ml) and the P2 step ⑷ product (465 g dried) prepared above under nitrogen. The mixture was heated at 80 ° C and a palladium-triphenylphosphine complex (ie, (Ph (PPh3) 2Cl2) K4.2 g) was added to the reaction mixture. After 10 minutes, J: -triphenylphosphine (ie, PPh3) (8.4 g) was added to the reaction mixture. After waiting another ten minutes, copper (1) iodide (4.2 g) was added to the reaction mixture.

以三小時的時間,於反應混合物添加苯基乙炔(348.8克) 溶液。將反應混合物在80°C攪拌12小時以確認反應完全。 於反應混合物添加甲苯(2209毫升),接著在減壓下和最大 反應器内溫度蒸除。將反應混合物冷卻至約50°C並濾除溴 化三乙銨。將;塊以甲苯清洗(每次250毫升)。將有機相以 HC1 (10 w/w%)i500毫升)和水(5〇〇毫升)清洗。 於有機相添加水(500毫升)、EDTA (18.6克)和二甲基乙二 圬(3.7克)。添加約NH4OH (25w/w%)(約93毫升)以保持pH=9 。將反應混合攪拌1小時。分離有機相和不溶物質與含鈀 錯合物之乳液。將分離之有機相以水(500毫升)清洗。藉由 迪恩-史達克分水器共沸乾燥直到水停止流出。添加過濾 劑白雲石(50克)(商標Tonsil)。將混合物加熱至l〇〇°C 30分鐘 -103· (97) 200424228 發明說明續頁 /、、孔之/慮布攄除白雲石並將剩餘物以甲苯(200毫升) /同洗。添加氧化矽(5〇克)。將反應混合物攪拌分鐘。以 具、、’田孔之濾布濾除矽石並將剩餘物以甲苯(2⑼毫升)清洗 〜加水性NH3 (2〇 w/w%)(250毫升)和N-乙醯半胱胺酸(12.5 克)。將相分離。將有機相以HC1 (1〇% w/w)(5〇〇毫升)清洗 。將有機物質以水清洗二次(每次500毫升)。在約120毫巴 之減壓下蒸除甲苯。鍋溫不超過約7〇1。剩餘深褐色黏性 油(約500-700毫升)。於鍋内的熱質量塊添加乙酸異丁酯 (1162¾升)並形成一深褐色溶液(約178〇毫升)。 將一第二反應鍋裝載庚烷(7丨2〇毫升)。以丨小時將第一反 應鋼之内容物緩慢添加至第二反應鍋。將懸浮液攪摔至少 3小時並濾除沉澱物。將濾塊以每次250毫升庚烷清洗四次 。將產物在40毫巴之減壓下於80°c乾燥。P2步驟⑻產物產 率是潮濕700克或乾燥419克。 使用包括 LC-MS、NMR 4、NMR 13C、GPC和 FTIR之分析 技術識別產物。 LC-MS分析#示產物是一種單體和寡聚星狀化合物與 金剛统核心之3錯合物混合物。下表表示經識別之結構(Ad= 金剛烷籠狀;T是二苯乙炔基-PhCECC6H4- ; t-Bu=-C(CH3)3): # M +波峰 提出的結構 la 664 AdT3H 2a 840 AdT4 3a 1 720 Ad(H)T3(t-Bu) 4a,b 896 AdT4(t-Bu) 5a’b 1326 Ad2T6 6a,b 1402 AdT6(C6H4) 200424228 (98) I發明說明績頁 &這些一般結構皆觀察到MW± lOOa.u.(加減PhC三C·基)之類 似物 b這些結構觀察到無二苯乙炔基懸臂(-176a u.)之類似物 lH NMR識別芳族質子(6.9-8 ppm,2·8±0·2Η)和金剛烷籠狀質 子(1.7-2.7 ppm,1±〇 2Η)。 13cnmr分I導i以下波峰歸屬·· 13C NMR波峰位置,ppm 結構 151.3、151、150、149.9、149.8 、149.3、149.2 鍵結於金剛烷之四級芳族碳 132-131、128·^、125.3、125.2 C-H芳族碳 129.6-129.1 芳族環碳 123.7-122.9、121.8、121.1、120.9 ' —"一 接附於乙炔之四級技μ 93.6 --—— 四級乙炔碳(在二取你班· 90·7、90·3、90.1、89.7、89.5、 89·4、89.1、88.8、88·7 ' --- 四級乙炔石炭 47·5_、46.7 Γ 〜^^ 四取代金剛燒之r Ττ 47.1 -- 四取代金剛燒之Γ ^ 41 --- 三取代金剛烷之r ΐτ 39.6 -------------- 三取代金剛烷之r Ττ 39·5、39.2-39.0、38·6、38.2、35 四取代金剛烷之m_ 32 *---- 芳族環上三級丁某; 30 三取代金剛纟完夕〇 Ττ GPC分析結旲: 四[3’/4’-(苯基乙決基)苯基]金剛虎(在圖扣中表 -105- 200424228 (99) I發明說明續ϊ 示)之波峰分子量約763 ; ' i,3/4-雙[1,,3,,5’-三[3,’/4,,-(苯基乙炔基)苯基]金剛烷-7,- 基]苯(在圖3F中表示)之波峰分子量約1330; • 雙{3,/4,-[1,,,3”,5,,-三[3,,’/4’’’-(苯基乙炔基)苯基]金剛 燒-7”基]苯基}_5,7_雙(苯基乙炔基)苯基]金剛烷( 在圖3F中表示)之波峰分子量約1520(肩部)。 從GPC得知,單體分子和小分子對寡聚物化合物之比例是 50土5%。 F TIR顯不以下: 以cm·1表示之破峰(波峰強度) 結構 3050 (弱) 芳族C-H 2930 (弱) 金剛烷上脂肪族C-H 2200 (非常弱) 乙炔 1600 (非常強) 芳族c=c 1500 (強) 1450 (中等) 135哲(中等) Μ備3 溶劑對於1,3,5,7-四[3,/4,·(苯基乙炔基)苯基]金剛烷(在圖 1D中表示)對1,3/4-雙[1,,3,,5,-三[3”/4,匕(苯基乙炔基)苯基]金 剛:^ -7 -基]苯(在圖if中表示)和至少j,3•雙{3,/4,_[ 1,,,3,,,5、 二[3 /4 -(苯基乙炔基)苯基]金剛烷-7,,基]苯基雙 [3(苯基乙块基)苯基]金剛烷(在圖1F中表示)之比例 的衝擊 -106- 200424228 (100) 發明說明續頁 將850¾升P1步驟(a)產物分為四等份,並在石油醚、石 油醚(ligroine)、庚烷和甲醇中進行沈澱。將各部分沉澱於 2520毫升溶劑中’真空過濾(直徑185毫米之布克納(Bllchner) 漏斗)’在滤器上藉150¾升溶劑清洗兩次,然後在真空爐 中於約20°C乾燥2小時,在40°C過夜並在7〇-80°C至固定重 量。 沉澱於烴中造成非常零散不需要複雜乾燥的淺褐色粉 末。沉澱於甲醇中得到重的褐色固體粒(顆粒大小約1毫米) ,當在2〇°C乾燥時便形成煤答。將此產物進一步乾燥。 將反應混合為在反應期間和沉澱前藉GPC分析。藉gpc 分析所有的濾液和最終固體,結果示於表5。在表5中,ρρτ 表示沈澱作用,單體是1,3,5,7·四(3,/4,-溴苯基)金剛垸(在圖 1Α中表示);二聚物是1,3/4-雙[1’,3,,5,-參(3,,/4,,-溴苯基)金剛 烷-7,-基]苯(在圖1C中表示);且三聚物是丨,3-雙 {3V4,-[1”,3”,5”-三(3,”/4",-澳苯基)金剛烷_7,,_基]苯基卜5,、雙 (3’,·’/4·…-溴苯基)金剛烷(在圖1C中表示)〇 表5 ΡΡΤ前之波峰^比 (單體對(二聚物+ 三聚物)) ΡΡΤ之溶劑 PPT後之波辛比 (單體對(二聚物+三聚 物)) 75.0 : 25.0 石油醚 52.5 : 47.4 75.0 : 25.0 石油醚(Ligroine) 64.0 : 36.0 75.0 : 25.0 庚烷 66.2 : 33.8 75.0 : 25.0 甲醇 75.0 : 25.0 200424228 (101) 發明說明續頁 為了摘錄這些結果,在反應混合物中單體對(二聚物+ 三聚物)之波峰比是約3:1。在烴沈殿濾液中損失的產物大 部份(>90%)是單體,同時清洗濾液中損耗是可忽略的。在 甲醇沈澱濾液中不存在產物。在沉澱後單體對(二聚物+ 三聚物)的比例以石油醚、石油醚(Hgr〇ine)、庚烷和甲醇的 順序提高(1:1 ">3:1),且濾液中單體損失降低(56+0%)。 劁借4-製備埶挽組分」 使用製備性液體層析法(PLC)分離製備1產物混合物中 的1,3/4-雙{1,,3,,5,-參[3V4’’-(苯基乙炔基)苯基]金剛烷-7,-基} 苯(在圖1F中表^示)。PLC與上述的HPLC法類似,但是使用 較大管柱分離較大量混合物(從數克至數百克)。將分離的 1,3/4-雙{1,,3,,5’-參[3"/4”-(苯基乙炔基)苯基]金剛烷-7,-基} 笨(在圖1F中表示)溶於溶劑中,旋轉塗佈於矽晶圓上,然 後烘烤並熟化為薄膜,並用於微晶片或多晶片模組。 製備5_製備熱固性纽分(al 使用製備性液體層析法(PLC)分離製備1產物混合物中 的 1,3-雙{3,/4_$[1”,3,,,5,|-參[3’’’/4’’’-(苯基乙炔基)苯基]金剛 燒-7,’-基]苯基:Γ-5,7-雙[3””/4,,,,-(苯基乙炔基)苯基]金剛烷(在 圖 1F中表示)。將分離的 1,3-雙{3,/4,_[1,,,3”,5”-參[3,,,/4,,,-(苯 基乙块基)苯基]金剛燒-7’’-基]苯卜5,7·雙[3,,,·/4,,,,-(苯基乙块 基)苯基]金剛烷(在圖1F中表示)溶於溶劑中,旋轉塗佈於 日曰圓上,然後、洪烤並熟化為薄膜,並用於微晶片或多晶 片模組。 希熱固性組分(a) -108- (102) 200424228 發明說明續頁A solution of phenylacetylene (348.8 g) was added to the reaction mixture over a period of three hours. The reaction mixture was stirred at 80 ° C. for 12 hours to confirm that the reaction was complete. Toluene (2209 ml) was added to the reaction mixture, followed by evaporation under reduced pressure at the maximum reactor temperature. The reaction mixture was cooled to about 50 ° C and triethylammonium bromide was filtered off. The blocks were washed with toluene (250 ml each). The organic phase was washed with HC1 (10 w / w%) (500 ml) and water (500 ml). To the organic phase was added water (500 ml), EDTA (18.6 g) and dimethylethylene difluoride (3.7 g). Add about NH4OH (25w / w%) (about 93 ml) to maintain pH = 9. The reaction was mixed and stirred for 1 hour. Separate the organic phase from the insoluble material and the emulsion containing the palladium complex. The separated organic phase was washed with water (500 ml). Dry azeotropically with a Dean-Stark trap until the water stops flowing. Add filter dolomite (50 g) (trademark Tonsil). The mixture was heated to 100 ° C. for 30 minutes -103 · (97) 200424228 Description of the Invention Continued / ,, pores / contained dolomite and washed the residue with toluene (200 ml) / co-wash. Add silicon oxide (50 g). The reaction mixture was stirred for minutes. Filter out the silica with a filter cloth with "Tian Kong" and wash the residue with toluene (2⑼ml) ~ add water NH3 (20w / w%) (250ml) and N-acetamidine (12.5 grams). The phases are separated. The organic phase was washed with HC1 (10% w / w) (500 ml). The organic material was washed twice with water (500 ml each time). The toluene was distilled off under reduced pressure of about 120 mbar. The pot temperature does not exceed about 701. Dark brown viscous oil (about 500-700 ml) remained. Isobutyl acetate (1162¾ liters) was added to the hot mass in the pot and a dark brown solution (about 1780 ml) was formed. A second reaction pot was charged with heptane (7-20 ml). The content of the first reaction steel was slowly added to the second reaction pot over an hour. The suspension was stirred for at least 3 hours and the precipitate was filtered off. The filter block was washed four times with 250 ml of heptane each time. The product was dried at 80 ° C. under a reduced pressure of 40 mbar. The yield of the plutonium product in step P2 is 700 g wet or 419 g dry. The products were identified using analytical techniques including LC-MS, NMR 4, NMR 13C, GPC, and FTIR. LC-MS analysis # showed that the product was a mixture of monomers and oligomeric star compounds with a 3 complex of the diamond core. The following table shows the identified structures (Ad = adamantane cage; T is diphenylethynyl-PhCECC6H4-; t-Bu = -C (CH3) 3): # M + the structure proposed by the peak la 664 AdT3H 2a 840 AdT4 3a 1 720 Ad (H) T3 (t-Bu) 4a, b 896 AdT4 (t-Bu) 5a'b 1326 Ad2T6 6a, b 1402 AdT6 (C6H4) 200424228 (98) IInstruction sheet & these general structures Both analogs of MW ± 100a.u. (Addition and subtraction of PhC triC · group) were observed. These structures were observed by analogs without diphenylethynyl cantilever (-176a u.). 1H NMR identified aromatic protons (6.9-8 ppm, 2 · 8 ± 0 · 2Η) and adamantane cage protons (1.7-2.7 ppm, 1 ± 0Η 2Η). The 13cnmr sub-I peaks are assigned. · 13C NMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8, 149.3, 149.2 bonded to the fourth-order aromatic carbon of adamantane 132-131, 128 · ^, 125.3 , 125.2 CH aromatic carbon 129.6-129.1 aromatic ring carbon 123.7-122.9, 121.8, 121.1, 120.9 '-" a fourth-stage technique attached to acetylene μ 93.6 --- fourth-stage acetylene carbon Ban · 90 · 7, 90 · 3, 90.1, 89.7, 89.5, 89 · 4, 89.1, 88.8, 88.7 '--- Fourth-grade acetylene charcoal 47.5_, 46.7 Γ ~ ^^ Four substitutions Ττ 47.1-Γ of tetra-substituted adamantane ^ 41 --- r of tri-substituted adamantane ΐτ 39.6 -------------- r of tri-substituted adamantane ττ 39 · 5, 39.2- 39.0, 38 · 6, 38.2, 35 m_ 32 of the tetra-substituted adamantane * ---- Tertiary Ding on the aromatic ring; 30 Three-substituted adamantane. 〇ττ GPC analysis results: four [3 '/ 4 The peak molecular weight of '-(phenylethlyl) phenyl] Vajra tiger (Table-105-200424228 (99) I in the figure) is shown in the figure below. The peak molecular weight is about 763;' i, 3 / 4-bis [1 ,, 3,, 5'-tri [3, '/ 4 ,,-(phenylethynyl) benzene The peak molecular weight of the base] adamantane-7, -yl] benzene (represented in FIG. 3F) is about 1330; • bis {3, / 4,-[1,, 3 ”, 5, -tris [3 ,, '/ 4' ''-(phenylethynyl) phenyl] adamantine-7 ”yl] phenyl} _5,7_bis (phenylethynyl) phenyl] adamantane (shown in Figure 3F) The peak molecular weight is about 1520 (shoulder). It is known from GPC that the ratio of monomer molecules and small molecules to oligomer compounds is 50 to 5%. F TIR is not less than the following: peak breaking in cm · 1 (peak intensity ) Structure 3050 (weak) aromatic CH 2930 (weak) aliphatic CH 2200 on adamantane (very weak) acetylene 1600 (very strong) aromatic c = c 1500 (strong) 1450 (medium) 135 philosophy (medium) 3 Solvents for 1,3,5,7-tetra [3, / 4, · (phenylethynyl) phenyl] adamantane (represented in Figure 1D) for 1,3 / 4-bis [1,3 ,, 5, -tris [3 ”/ 4, di (phenylethynyl) phenyl] adamantine: ^-7-yl] benzene (represented in the figure if) and at least j, 3 • bis {3, / 4 , _ [1 ,,, 3 ,,, 5, di [3 / 4--(phenylethynyl) phenyl] adamantane-7,, yl] phenylbis [3 (phenylethyl block ) Phenyl] adamantane (represented in Figure 1F) -106- 200424228 (100) Description of the Invention Continued The 850¾ liter P1 step (a) product is divided into four equal parts, and in petroleum ether, petroleum ether (Ligroine), heptane and methanol. The parts were precipitated in 2520 ml of solvent 'vacuum filtration (Bllchner funnel with a diameter of 185 mm)' and washed twice with 150¾ liters of solvent on the filter, and then dried in a vacuum oven at about 20 ° C for 2 hours , Overnight at 40 ° C and at 70-80 ° C to a fixed weight. Precipitation in hydrocarbons results in very scattered light brown powder that does not require complex drying. Precipitation in methanol gave heavy brown solid particles (particle size about 1 mm), which formed coal when dried at 20 ° C. This product was further dried. The reaction was mixed for analysis by GPC during the reaction and before precipitation. All filtrates and final solids were analyzed by gpc. The results are shown in Table 5. In Table 5, ρρτ represents precipitation, and the monomer is 1,3,5,7 · tetra (3, / 4, -bromophenyl) adamantine (represented in FIG. 1A); the dimer is 1,3 / 4-bis [1 ', 3,, 5, -reference (3 ,, / 4 ,,-bromophenyl) adamantane-7, -yl] benzene (represented in FIG. 1C); and the trimer is丨, 3-bis {3V4,-[1 ”, 3”, 5 ”-tris (3,” / 4 ",-auphenyl) adamantane_7 ,, _ yl] phenylbu 5,5, bis ( 3 ', ·' / 4 · ...- bromophenyl) adamantane (represented in FIG. 1C). Table 5 Peak ^ ratio before PPT (monomer pair (dimer + trimer)) PPT solvent PPT Later Bossin ratio (monomer pair (dimer + trimer)) 75.0: 25.0 petroleum ether 52.5: 47.4 75.0: 25.0 petroleum ether (Ligroine) 64.0: 36.0 75.0: 25.0 heptane 66.2: 33.8 75.0: 25.0 methanol 75.0: 25.0 200424228 (101) Description of the Invention To extract these results, the peak ratio of monomer pair (dimer + trimer) in the reaction mixture is about 3: 1. Most of the products lost in the hydrocarbon filtrate (> 90%) are monomers. At the same time, the losses in the washing filtrate are negligible. No product was present in the methanol precipitation filtrate. After precipitation, the ratio of monomer to (dimer + trimer) was increased in the order of petroleum ether, petroleum ether, heptane, and methanol (1: 1 " > 3: 1), and Monomer loss in the filtrate was reduced (56 + 0%).劁 Breath 4-preparation of the pupa component '' Using Preparative Liquid Chromatography (PLC) to separate and prepare 1,3 / 4-bis {1,, 3,5, -see [3V4 ''- (Phenylethynyl) phenyl] adamantane-7, -yl} benzene (shown in Figure 1F). PLC is similar to the HPLC method described above, but uses larger columns to separate larger mixtures (from a few grams to hundreds of grams). The isolated 1,3 / 4-bis {1,, 3,, 5'-reference [3 " / 4 "-(phenylethynyl) phenyl] adamantane-7, -yl} is stupid (in Figure 1F (Indicated in Chinese) is dissolved in a solvent, spin-coated on a silicon wafer, then baked and cured into a thin film, and used in a microchip or multi-chip module. Preparation 5_Preparation of thermoset bonds (al using preparative liquid chromatography (PLC) separation and preparation of 1,3-bis {3, / 4 _ $ [1 ”, 3,, 5, || -reference [3 '' '/ 4' ''-(phenylacetylene Phenyl) phenyl] adamantine-7, '-yl] phenyl: Γ-5,7-bis [3 "" / 4 ,,,,-(phenylethynyl) phenyl] adamantane (in Figure 1F (Indicated in)). The separated 1,3-bis {3, / 4, _ [1 ,,, 3 ", 5" -reference [3 ,,, / 4 ,,,-(phenylethyl block) benzene Base] adamantine-7 ''-based] phenyl 5,7 · bis [3 ,,, // 4 ,,,,,-(phenylethyl block) phenyl] adamantane (shown in FIG. 1F) Dissolved in solvent, spin-coated on Japanese yen, then baked and cured into thin film, and used in microchip or multi-chip module. Greek thermosetting component (a) -108- (102) 200424228 Description of the invention Page

使用以下方法製備化學式IXA、和IXD之雙 金剛燒單體及化學式VI、X、XV!、xvm、XX及ΧΧΙΙ之雙 金剛烷單體的寡聚物或嘹人仏 t _ 芬化初a氷合物。如圖2所示般,使用溴和 一路易士(Lewis)酸觸媒將雙金剛烷轉化為溴化雙金剛烷 產物。接著在路易適酸觸媒存在下使溴化之雙金剛烷產物 與伏笨反應以形成溴苯基化雙金剛烷。接著在如該The following methods are used to prepare oligomeric monomers or bis-manganese monomers of chemical formulas IXA and IXD and bis-adamantane monomers of chemical formulas VI, X, XV !, xvm, XX, and XXII.组合。 The compound. As shown in Figure 2, bisdamantane was converted to the brominated bisdamantane product using bromine and a Lewis acid catalyst. The brominated bisadamantane product is then reacted with voltam in the presence of a Lewis acid catalyst to form bromophenylated bisadamantane. And then as

Sonogashira偶合反應中使用之觸媒系統存在下使溴苯基化 雙金剛烷與末端炔反應。如吾等在2〇〇1年1〇月Η日所申請 待審中之專利申請案pCT/US01/22204中所述般整理各步驟 之產物。 _ -. 製備熱固性組份 使用以下方法製備化學式\^和IXA、IXB、IXC^ IXD之雙 金剛單體及化學式VI、χ、XVI、χνιπ、χχ及χχιΙ之雙 金剛燒單體的寡聚物或聚合物。如圖以至1F所示般,使用 如製備1和2所述般類似步驟將雙金剛烷轉化為雙金剛烷 之/臭表基化組合物。在圖1A至1C中,在如製備1和2所述之 0· ’ 路易士酸觸媒?及/或如製備2所述之第二觸媒組份存在下二-/ 使雙金剛燒與^經取代之_素苯基化合物反應。在整理反應 孑· 混合物後得到單體、二聚物、三聚物和更高寡聚物之混合 : 物。在圖1D至1F中,接著在觸媒存在下使溴苯基化雙金剛 - ^元此合物與末端快反應而產生本發明之块取代雙金剛炫 , 組合物。 ijj方式: 實例1 -109· 200424228 (103) 發明說明續頁 將約180-210克來自以上製備1或2之熱固性組份⑷添加 於燒瓶並藉搖盪和燒瓶而溶解。使用之黏性促進劑(b)是 聚碳矽烷(CH2SiH2)q (其中q是20-30)。測定希望的黏性促進 劑(b)濃度,添加於燒瓶’並〇·5和7%重量比之間變化。將 需要的二甲苯量添加於該燒瓶。溫度設定於155°C。使反 應混合物迴流過夜約14-16小時。將溶液在60°C轉動蒸發為 濃稠油(350-450克)。於該燒瓶添加環己酮(1000毫升± 1〇毫 升)。重複先前二個步驟三次。除了以上製備1或2的GPC 結果外,GPC顯示形成波峰分子量30,000之寡聚物和亦形 成波峰分子量表〇〇〇之寡聚物。 發明實例2 將約180-210克來自以上製備1或2之熱固性組份⑷添加 於燒瓶並藉搖盪和燒瓶而溶解。使用之黏性促進劑(b)是 分子量1760之鄰甲紛清漆樹脂’可自Schenectady International Inc·購得。以希望的3重量比黏性促進劑(b)為基準,計算黏 性促進劑(b)的需要量是6克,並添加於燒瓶。攪拌燒瓶内 容物直到黏性g足進劑溶解(約1至2小時)。GPC結果與以上 製備1或2類似:Γ。 發明實例3 對照物A是一種由Honeywell之美國專利第5,986,045號教 示之聚芳烯醚。關於發明實例3,係使用熟諳此藝者已知 之典型塗佈條件將發明實例3之組合物應用於基材。The catalyst system used in the Sonogashira coupling reaction reacts bromophenylated bisdamantane with a terminal alkyne. The products of each step are arranged as described in our pending patent application pCT / US01 / 22204, which was filed on October 21, 2001. _-. Preparation of thermosetting components: The oligomers of bisdamantane monomers of formula ^ and IXA, IXB, IXC ^ IXD and bisdamantene monomers of formula VI, χ, XVI, χνιπ, χχ and χχιΙ Or polymer. As shown in Figures 1 to 1F, bisdamantane is converted to a bisdamantane / styrenated composition using similar procedures as described in Preparations 1 and 2. In FIGS. 1A to 1C, in the presence of the 0 · 'Lewis acid catalyst as described in Preparation 1 and 2 and / or the second catalyst component as described in Preparation 2- ^ Substituted p-phenyl compounds for reaction. After finishing the reaction 孑 · mixture, a mixture of monomers, dimers, trimers and higher oligomers is obtained. In Figs. 1D to 1F, the bromophenylated bisdamantyl- ^ -membered compound is then reacted quickly with the terminal in the presence of a catalyst to produce the block-substituted bisdamantamine composition of the present invention. ijj method: Example 1 -109 · 200424228 (103) Description of the invention continued page About 180-210 grams of the thermosetting component ⑷ from Preparation 1 or 2 above was added to the flask and dissolved by shaking and flask. The viscosity promoter (b) used is polycarbosilane (CH2SiH2) q (where q is 20-30). The desired viscosity promoter (b) concentration was measured and added to the flask 'and the weight ratio was changed between 0.5 and 7%. The required amount of xylene was added to the flask. The temperature was set at 155 ° C. The reaction mixture was refluxed overnight for about 14-16 hours. The solution was evaporated by evaporation at 60 ° C to a thick oil (350-450 g). Cyclohexanone (1000 ml ± 10 ml) was added to the flask. Repeat the previous two steps three times. In addition to the GPC results of Preparation 1 or 2 above, GPC showed formation of oligomers with a peak molecular weight of 30,000 and oligomers with a peak molecular weight table of 0.00. Inventive Example 2 About 180-210 grams of the thermosetting component ⑷ from Preparation 1 or 2 above was added to a flask and dissolved by shaking and the flask. The viscosity promoter (b) used is o-methyl varnish resin with a molecular weight of 1760, which is commercially available from Schenectady International Inc. Based on the desired 3 weight ratio viscosity accelerator (b), the required amount of the viscosity accelerator (b) was calculated to be 6 g and added to the flask. Stir the contents of the flask until the viscous g agent is dissolved (about 1 to 2 hours). The GPC results are similar to Preparation 1 or 2 above: Γ. Invention Example 3 Control A is a polyarylene ether taught by Honeywell, U.S. Patent No. 5,986,045. Regarding Invention Example 3, the composition of Invention Example 3 was applied to a substrate using typical coating conditions known to those skilled in the art.

將產生的旋轉塗佈組合物在以下各溫度於N2 (<5〇 ppm 〇2)下烘焙1分鐘:125°C、250°C和350°C。爐熟化條件是400°C 200424228 (104) 發明說明續頁 在N2中60分鐘(15公升/分鐘),以每分鐘5° K從250°C起跳。 熟化溫度是350°C至450°C。或者,可以使用在350°C至450°C 於N2中1-5分鐘之加熱板熟化條件。根據上述分析測試法 分析所產生的層。該層性質於表中提出。 表6 性質 對照物A 發明實例3 電力: 介電常數@1ΜΗχ 2.85 2.60土 0.2 熱力: 在425°C /10小時後收 縮度(%y 4.0 3.5 在425°C /0-30分鐘後 之ITGA重量損失 1.2 <1 在425°C /30-150分鐘後 之ITGA重量損失 1.6 1.5-2 機械: 第一循環之Tg(°C ) 400 >400 第二循環之Jg(°c ) 400 >450 模數(Gpj) 5.0 (薄膜厚度 =0 · 8微米) 6·0±0·2 (薄膜厚度 =1 · 6微米) 硬度(Gpa) 〇·4 (薄膜厚度 =0 · 8微米) 6·0±0·1 (薄膜厚度 =1 · 6微米) 圖釘拉起強度(kpsi) >11 >11 膠帶測試 通過 通過 折射率@633毫微米 1.675 1.62 與溶劑相容 是 是 200424228 (105) 發明說明續頁 關於在超高溫處理環境之Tg改良是重要的,且模數改良 歸因於機械安定度。 發明實例4-10 關於發明實例4-7,係依照發明實例2產生表III之組合物 ,除了改變鄰甲酚清漆樹脂黏性促進劑(b)之外。關於發 明實例8-10,係依照發明實例1產生表7之組合物,除了改 變聚碳矽烷促進劑(b)的量之外。 表7 性質 發明實 發明實 發明實 發明實 發明實 發明實 發明實 修' 例5 例6 例7 例8 例9 例10 鄰甲酚清漆樹 0.5 1.0 2.0 3.0 — — … 脂(重量%) 聚碳碎燒(重 … … —- … 1.0 2.0 3.0 量%) 膨漲% 6.48 5.92 5.80 5.62 5.39 5.08 4.92 收縮度(425°C 2.97 2.45 2.44 2.54 2.28 2.34 2.49 /10小時) 膠帶測試 通過 通過 通過 通過 通過 通過 通過 圖釘拉起(平 9.7, 10.7, 9.1,11.7 10.4, 8.5 » 11.4 7.0 , 9.7 7.9,10.0 均,ksi) 11.3 11.2 11.4 因此,頃揭示產生低介電常數聚合物之組合物和方法的 特定具體實施例和應用。然而,熟諳此藝者應該顯而易見 除了已經敘述者之外,能夠有許多不遠離此處本發明概念 之修正案。因此,本發明之主題事物並不受限,除了申請 200424228 (106) 發明說明續頁 專利範圍的精神之外。此外,在解釋本說明書和 範圍二者時,所有用詞應該以符合本文儘可能的 。特定而言,ncomprisesn* "comprising”之用詞應 以非排外的方式引用元件、組份或步驟,其表示 元件、組份或步驟可以存在、或使用、或與其它 用之元件、組份或步驟結合。 申請專利 廣意解釋 該解釋為 所引用之 未明確引 -113-The resulting spin-coating composition was baked at N2 (< 50 ppm 〇2) for 1 minute at each of the following temperatures: 125 ° C, 250 ° C, and 350 ° C. Furnace curing conditions are 400 ° C 200424228 (104) Description of the invention continued on N2 60 minutes (15 liters / minute), jumping from 250 ° C at 5 ° K per minute. The curing temperature is 350 ° C to 450 ° C. Alternatively, a hot plate aging condition at 350 ° C to 450 ° C in N2 for 1-5 minutes can be used. The resulting layers were analyzed in accordance with the analytical test method described above. The properties of this layer are presented in the table. Table 6 Property Control A Invention Example 3 Electricity: Dielectric Constant @ 1ΜΗχ 2.85 2.60 Soil 0.2 Thermal: Shrinkage after 425 ° C / 10 hours (% y 4.0 3.5 ITGA weight after 425 ° C / 0-30 minutes Loss 1.2 < 1 ITGA weight loss after 425 ° C / 30-150 minutes 1.6 1.5-2 Machinery: Tg (° C) 400 in the first cycle 400 > 400 Jg (° c) 400 in the second cycle > 450 modulus (Gpj) 5.0 (thin film thickness = 0 · 8 microns) 6 · 0 ± 0 · 2 (thin film thickness = 1 · 6 microns) hardness (Gpa) 〇 · 4 (thin film thickness = 0 · 8 microns) 6 · 0 ± 0 · 1 (thickness of film = 1. 6 microns) Pull up strength of pushpin (kpsi) > 11 > 11 Adhesive tape test passed refractive index @ 633nm 1.675 1.62 Compatibility with solvents is 200424228 (105) Invention Note that the continuation sheet is important for the improvement of Tg in the ultra-high temperature processing environment, and the improvement of the modulus is attributed to the mechanical stability. Inventive Examples 4-10 Regarding Inventive Examples 4-7, the compositions of Table III were produced according to Inventive Example 2 In addition to changing the adhesion promoter (b) of o-cresol varnish resin, the invention examples 8 to 10 are in accordance with the invention Example 1 produces the composition of Table 7, except for changing the amount of polycarbosilane promoter (b). Table 7 Properties Invention Invention Invention Invention Invention Invention Invention Practice 'Example 5 Example 6 Example 7 Example 8 cases 9 cases 10 o-cresol varnish 0.5 1.0 2.0 3.0 — —… fat (wt%) polycarbon calcined (heavy…… —-… 1.0 2.0 3.0 volume%) inflation% 6.48 5.92 5.80 5.62 5.39 5.08 4.92 shrinkage Degree (425 ° C 2.97 2.45 2.44 2.54 2.28 2.34 2.49 / 10 hours) The tape test passes the pass, the pass passes the pull pin (flat 9.7, 10.7, 9.1, 11.7 10.4, 8.5 »11.4 7.0, 9.7 7.9, 10.0 all, ksi) 11.3 11.2 11.4 Therefore, specific specific examples and applications of compositions and methods for producing low dielectric constant polymers have been disclosed. However, it should be apparent to those skilled in the art that in addition to those already described, there can be many without departing from this. Modifications to the concept of the invention. Therefore, the subject matter of the present invention is not limited, except for the spirit of the patent scope of the application for application of 200424228 (106) Continuation Sheet of the Invention. In addition, in interpreting both the specification and the scope, all terms should be used as closely as possible to this document. In particular, the term "ncomprisesn * " comprising" shall refer to a component, component, or step in a non-exclusive manner, which means that the component, component, or step may exist, or be used, or be used with other components, components, or components. Or the steps are combined. The patent application is to be interpreted broadly as the interpretation is not explicitly cited -113-

Claims (1)

200424228 拾、申請專利範圍 1. 一種組合物,其包括: (a)熱固性組份,其包括(1)視需要至少一個化學式I之 單體 Q200424228 Scope of patent application 1. A composition comprising: (a) a thermosetting component comprising (1) at least one monomer of formula I as required Q 和(2)至少一_個化學式II之寡聚物或聚合物 200424228 P 申請專利範園續頁And (2) at least one oligomer or polymer of Chemical Formula II 200424228 P Patent Application Park Continued 〇· 200424228 申請專利範圍續頁 其中E是一種籠狀化合物;各Q是相同或不同,並選自 氫、芳基、分枝芳基和經取代芳基(其中該取代基包括 氫、||素、烷基、芳基、經取代芳基、雜芳基、芳基醚 、晞基、決基、燒氧基、經燒基、經芳基、經晞基、經 炔基、羥基或羧基);該Gw是芳基或經取代芳基(其中取 代基包括鹵素和烷基);該h是0至10 ; i是0至10 ; j是0至 10 ;且w是0或1 ; (b)包括具有至少雙官能度之化合物的黏性促進劑 ,其中該雙官能度可以是相同或不同,當該組合物應用 於基材時,-第一官能度能夠與熱固性組份(a)交互作用 ,且第二官能度能夠與基材交互作用。 2.根據申請專利範圍第1項之組合物,其中該熱固性組份 (a)包括:至少一個化學式III之金剛烷單體(1)〇 200424228 Continued patent application range where E is a cage compound; each Q is the same or different and is selected from hydrogen, aryl, branched aryl and substituted aryl (where the substituent includes hydrogen, || Element, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, decyl, alkoxy, alkynyl, aryl, fluorenyl, alkynyl, hydroxy, or carboxyl ); The Gw is an aryl or a substituted aryl (wherein the substituent includes a halogen and an alkyl group); the h is 0 to 10; i is 0 to 10; j is 0 to 10; and w is 0 or 1; ( b) a viscosity promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, when the composition is applied to a substrate, the first functionality can be compatible with the thermosetting component (a) Interaction, and the second functionality is capable of interacting with the substrate. 2. The composition according to item 1 of the patent application scope, wherein the thermosetting component (a) comprises: at least one adamantane monomer (1) of formula III 和該至少一個化學式IV之寡聚物或聚合物(2) 200424228 申請專利範圍續頁And the at least one oligomer or polymer of formula IV (2) 200424228 Scope of Patent Application Continued 和至少一個化學式VI之寡聚物或聚合物(2) 200424228 申請專利範園續頁And at least one oligomer or polymer of formula VI (2) 200424228 3 ·根據申請專利範圍第2項之組合物,其中該至少一個寡 聚物或聚合物(2)是化學式χιν之金剛烷二聚物 n Q3. The composition according to item 2 of the scope of patent application, wherein the at least one oligomer or polymer (2) is an adamantane dimer of the chemical formula χιν n Q QQ 4.根據申請專利範圍第2項之組合物,其中該至少一個寡 聚物或聚合物(2)是化學式χν之金剛烷三聚物4. The composition according to item 2 of the scope of patent application, wherein the at least one oligomer or polymer (2) is an adamantane trimer of the chemical formula χν 5 ·根據申請專利範圍第2項之組合物,其中該熱固性組份 200424228 申請專利範圍續頁 (a)包括化學式VIIA5 · The composition according to item 2 of the scope of patent application, wherein the thermosetting component 200424228 scope of patent application continued (a) includes chemical formula VIIA 、化學式VIIBChemical formula VIIB 、化學式VIICChemical formula VIIC 或化學式VIID之金剛烷單體Or adamantane monomer of formula VIID Η -6- 200424228 »- 申請專利範圍續頁 ^(2XCV«^VIII^岭2蔣辦效蓥>殚命參6- -6- 200424228 »-Scope of Patent Application Continued ^ (2XCV« ^ VIII ^ ridge 2 Jiang Banxiao 蓥 > 殚 命 参 200424228 或(1)化學式IXA200424228 or (1) Chemical formula IXA 、化學式IXBChemical formula IXB 申請專利範圍續頁 200424228 申請專利範圍續頁 、化學式IXCPatent Application Continued 200424228 Patent Application Continued , Chemical Formula IXC 或化學式IXD之雙金剛烷單體Bisadamantane monomer of chemical formula IXD 及(2)化學式X之雙金剛烷寡聚物或聚合物 200424228 申請專利範圍續頁And (2) bisadamantane oligomer or polymer of chemical formula X 200424228 -10 - 200424228 申請專利範圍續頁 其中該h是0至10 ; i是0至10 ; j是0至10 ;各該1^是相同或 不同,並從氫、齒素、烷基、芳基、經取代芳基、雜芳 基、芳基醚、烯基、炔基、烷氧基、羥烷基、羥芳基、 羥烯基、羥块基、羥基或羧基選擇;各Y和是相同或不 同,並從氫、烷基、芳基、經取代芳基或_素選擇。 6. 根據申請專利範圍第5項之組合物,其中存在該單體。 7. 根據申請專利範圍第5或6項之組合物,其中該Ri是芳基 或經取代芳基且該Y是氫、苯基或聯苯基。 8 .根據申請專利範圍第7項之組合物,其中該化學式VIIA 、VIIB、VIK:或VIID之金岡烷單體係以約30至約70面積 百分比之量存在,且該化學式VIII之金剛烷寡聚物或聚 合物係以約70至約30面積百分比之量存在,較佳以約40 至約60面積百分比的量,且該化學式VIII之金鋼烷寡聚 物或聚合物是以約60至約40面積百分比的量存在,更佳 約45至約55面積百分比,且化學式VIII之金剛烷寡聚物 或聚合係以約5 5至約4 5面積百分比之量存在。 9.根據申請專言利範圍第7項之組合物,其中該(2)該金剛烷 寡聚物或聚1合物是屬化學式XVII,其中h是0或1-10-200424228 Continued patent application range where the h is 0 to 10; i is 0 to 10; j is 0 to 10; each 1 ^ is the same or different, and is selected from hydrogen, halide, alkyl, and aryl , Substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyblock, hydroxy, or carboxyl; each Y and is the same Or different, and select from hydrogen, alkyl, aryl, substituted aryl, or molybdenum. 6. A composition according to item 5 of the patent application, wherein the monomer is present. 7. The composition according to claim 5 or 6, wherein Ri is an aryl or substituted aryl and Y is hydrogen, phenyl, or biphenyl. 8. The composition according to item 7 of the scope of patent application, wherein the adamantane monosystem of the formula VIIA, VIIB, VIK: or VIID is present in an amount of about 30 to about 70 area percent, and the adamantane oligosaccharide of the formula VIII The polymer or polymer is present in an amount of about 70 to about 30 area percent, preferably in an amount of about 40 to about 60 area percent, and the adamantane oligomer or polymer of formula VIII is about 60 to An amount of about 40 area percent is present, more preferably about 45 to about 55 area percent, and the adamantane oligomer or polymer of formula VIII is present in an amount of about 55 to about 45 area percent. 9. The composition according to claim 7 of the application, wherein the (2) the adamantane oligomer or poly 1 is of formula XVII, where h is 0 or 1 R -11 - 200424228 申請專利範圍續頁 或該(2)雙金剛烷寡聚物或聚合物是屬化學式XVIII,其 中h是0或1R -11-200424228 Continued patent application scope or the (2) bisdamantane oligomer or polymer is of formula XVIII, where h is 0 or 1 10.根據申請專利範圍第9項之組合物,其中該(2)金剛烷寡 聚物或聚合物是化學式XIX之二聚物10. The composition according to item 9 of the scope of patent application, wherein the (2) adamantane oligomer or polymer is a dimer of chemical formula XIX 或該(2)雙金剛烷寡聚物或聚合物是化學式XX之二聚物Or the (2) bisadamantane oligomer or polymer is a dimer of chemical formula XX -12- 200424228 申請專利範圍續頁-12- 200424228 Scope of Patent Application Continued -13- 200424228 申請專利範圍續頁 12.根據申請專利範圍第7項之組合物 聚物或聚合物是一種化學式XXIII 其中該(2)金剛烷寡 R-13- 200424228 Scope of Patent Application Continued 12. Composition according to item 7 of the scope of patent application Polymer or polymer is a chemical formula XXIII where (2) adamantane oligo R 2 Y2 Y R f口化學式X5CV之混合物 R RR f mixture of chemical formula X5CV R R II R 或該(2)雙金剛烷寡聚物或聚合物JII R or the (2) bisadamantane oligomer or polymer J -14- 200424228 申請專利範圍續頁-14- 200424228 Scope of Patent Application Continued f口化學式XXVI之混合物 A R R RF-portion mixture of chemical formula XXVI A R R R R 13.根據申請專利範圍第7項之組合物,其中在該熱固性組份 (a)中,該單體(1)和寡聚物或聚合物(2)是金剛燒基單體。 -15 - 200424228 \ 申請專利範圍續頁R 13. The composition according to item 7 of the scope of patent application, wherein in the thermosetting component (a), the monomer (1) and the oligomer or polymer (2) are diamond-based monomers. -15-200424228 \ Application for patent scope continued 200424228 申請專利範圍續頁 及化學式XXII之雙金剛烷三聚物的混合物 R R R200424228 Continued patent application range and mixture of bisdamantane trimer of chemical formula XXII R R R 15. 根據申請專痢範圍第14項之組合物,其中該苯基上之 RiC^C基團中至少二個是二種不同的異構物,且該金剛 烷單體的二個橋頭碳間的苯基中至少一個是以二種不 同的異構物存在。 16. 根據申請專利範圍第15項之組合物,其中該至少二個異 構物是間-和對-異構物。15. The composition according to item 14 of the scope of application, wherein at least two of the RiC ^ C groups on the phenyl group are two different isomers, and the two bridgehead carbons of the adamantane monomer are At least one of the phenyl groups is present as two different isomers. 16. A composition according to item 15 of the scope of patent application, wherein the at least two isomers are meta- and para-isomers. 17. 根據申請專利範圍第16項之組合物,其包括至少二個該 寡聚物或聚f合物。 18. 根據申請專7利範圍第17項之組合物,其中該黏性促進劑 (b)的第一官能度和該第二官能度中至少一項是從含Si 基、含N基、含C-0基、羥基及含C=C基選擇。 19. 根據申請專利範圍第18項之組合物,其中該含Si基較佳 是選自含Si-H、Si-Ο及Si-N所組成之群;含N基是選自胺 、亞胺、醯胺和醯亞胺所組成之群選擇;含C-C基是選 自羰基、酯、-COOH、具有1至5個碳原子之烷氧基、醚 -17- 200424228 « 申請專利範園續頁 群;該羥基是酚;且 組成之群。 ’其中該含Si基是選 類、縮水甘―油醚及環氧基所組成之 含c=c基是選自烯丙基和乙埽基戶斤 20·根據申請專利範圍第19項之組合物 自化學式 XI之矽烷(R2)k(R3)lSi(R4)m(R5)n ;其中 &、&、& 和Rs各自獨立表示氫、羥基、不飽和或飽和烷基、經取 代或未經取代之统基(其中該取代基是胺基或環氧基) 、不飽和或飽和烷氧基、不飽和或飽和羧酸基或芳基, 該I、R3、R4和R5中至少二個是表示氫、羥基、飽和或不 飽和虎氧基、不飽和燒基或不飽和羧基,且k+1+ni+1^4) 或化學式χιΐ之聚羰矽烷: p- - Η 1 Γ** 鳴 ^10 r _ C: _Χί , 1 -Q; 1 C:_1¾ ΟΙ R12— -Si —Ris- 1 . I 【7 I Rl4 — - Ρ — 一 q — 麵 r —i 一 其中R6、1^_2和各自獨立表示經取代或未經取代之亞 烷基、環產烷基、伸乙晞基、伸烯丙基或亞芳基;r7 、Rg、R9、"Ri〇、Rl3及Rl4各自獨立表示氯原子、燒基、 亞烷基、乙晞基、環烷基、晞丙基、芳基或亞芳基且可 以是線性或分枝;Rn表示有機碎、碎燒基、碎氧基或 有機基團;且p、q、r及s滿足[4Sp+q+r+s< 1〇〇,〇〇〇]的條件 ,且q及r及s可以集體或各自是零; 該含C-0基是從縮水甘油醚或含至少一個羧酸基之不 飽和羧酸的酯類選擇; 200424228 申請專利範圍續頁 該含.c=c基是乙烯基環族寡聚物或聚合物,其中該環 組基是吡啶、芳香族或雜芳香族基;且 該羥基是化學式XIII之酚醛樹脂或寡聚物: _[R16C6H2(OH)(R17)]「,其中R16是經取代或未經取代之亞 · 烷基、環亞烷基、乙晞基、晞丙基或芳基,R17是烷基 : V 、亞烷基、伸乙烯基、環亞烷基、伸晞丙基或芳基,且 \ t=3-100 〇 21. 根據申請專利範圍第20項之組合物,其中該黏性促進劑 籲 (b)是酚醛樹脂或寡聚物。 —> 22. —種寡聚物7其包括根據申請專利範圍第7項之組合物。一^ 23. —種旋轉塗佈之組合物,其包括根據申請專利範圍第22 項之寡聚物和溶劑(較佳環己酮)。 24. —種聚合物,其是從根據申請專利範圍第23項之旋轉塗 佈組合物製得。 25. —種層,其包括根據申請專利範圍第24項之組合物。 26. 根據申請專利範圍第25項之層,其中該層之厚度多達或 ·' 大於約1,5#米。 27. 根據申請專3利範圍第25項之層,其中該聚合物係經熟化。 ’ 28. 根據申請專利範圍第25項之層,其中該層之介電常數低 於 3.0。 29. 根據申請專利範圍第25項之組合物,其中該層之玻璃轉 · 移溫度是至少約350°C。 30. —種基材,其上具有至少一層根據申請專利範圍第25 項之層。 -19- 200424228 申請專利範圍續頁 31.—種微晶片,其包括根據申請專利範圍第30項之基材。 32· —種方法,改良(a)熱固性組份於基材之黏性,該(a)熱 固性組份包括:(1)化學式I之單體 Q17. A composition according to claim 16 of the scope of patent application, which comprises at least two such oligomers or poly-f compounds. 18. The composition according to item 17 of the application, wherein at least one of the first functionality and the second functionality of the adhesion promoter (b) is selected from the group consisting of Si group, N group, Choice of C-0 group, hydroxyl group and C = C group. 19. The composition according to item 18 of the application, wherein the Si-containing group is preferably selected from the group consisting of Si-H, Si-O, and Si-N; the N-containing group is selected from the group consisting of amines and imines. Group consisting of hydrazone, amidine, and amidine; CC group is selected from carbonyl, ester, -COOH, alkoxy group with 1 to 5 carbon atoms, ether-17- 200424228 «Application for patent A group; the hydroxyl group is a phenol; and a group consisting of. 'Wherein the Si-containing group is selected from the group consisting of glycidyl-oleyl ether and epoxy group, and the c = c-containing group is selected from the group consisting of allyl and acetamidine 20 · According to the combination of item 19 in the scope of patent application It is derived from silane (R2) k (R3) lSi (R4) m (R5) n of chemical formula XI; wherein &, &, & and Rs each independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted Or an unsubstituted system (where the substituent is an amine group or an epoxy group), an unsaturated or saturated alkoxy group, an unsaturated or saturated carboxylic acid group, or an aryl group, at least one of I, R3, R4, and R5 Two are polycarbonylsilanes representing hydrogen, hydroxyl, saturated or unsaturated oxo, unsaturated alkyl or unsaturated carboxyl, and k + 1 + ni + 1 ^ 4) or chemical formula χιΐ: p--Η 1 Γ ** Ming ^ 10 r _ C: _Χί, 1 -Q; 1 C: _1¾ ΟΙ R12— -Si —Ris- 1. I [7 I Rl4 —-Ρ — One q — Plane r —i — where R6, 1 ^ _2 and each independently represent a substituted or unsubstituted alkylene group, a cycloalkylene group, an ethylene group, an allyl group or an arylene group; r7, Rg, R9, " Ri0, Rl3, and Rl4 Independent representation Atom, alkyl, alkylene, ethenyl, cycloalkyl, methyl, aryl, or arylene and may be linear or branched; Rn means organic, crushed, oxy, or organic And p, q, r, and s satisfy the conditions of [4Sp + q + r + s < 100, 00], and q, r, and s may be collectively or individually zero; the C-0-containing group It is selected from glycidyl ethers or esters of unsaturated carboxylic acids containing at least one carboxylic acid group; 200424228 Application for a patent application continued page The .c = c group is a vinyl ring family oligomer or polymer in which the ring The group is a pyridine, aromatic or heteroaromatic group; and the hydroxyl group is a phenolic resin or oligomer of chemical formula XIII: _ [R16C6H2 (OH) (R17)] ", where R16 is a substituted or unsubstituted · Alkyl, cycloalkylene, ethylfluorenyl, methylpropyl, or aryl, R17 is alkyl: V, alkylene, vinylidene, cycloalkylene, methylidenepropyl, or aryl, and \ t = 3-100 〇21. The composition according to item 20 of the scope of patent application, wherein the viscosity promoter (b) is a phenolic resin or oligomer. —> 22. —An oligomer 7 including according to Please apply for the composition in the scope of patent item 7. ^ 23. — A spin-coating composition, which includes an oligomer and a solvent (preferably cyclohexanone) according to the scope of patent application in scope 22. 24. — species A polymer prepared from a spin coating composition according to item 23 of the scope of patent application. 25. A seed layer comprising a composition according to item 24 of the scope of patent application. 26. The layer according to item 25 of the scope of patent application, wherein the thickness of the layer is as high as or greater than about 1,5 # meters. 27. The layer according to item 25 of the application, wherein the polymer is aged. 28. The layer according to item 25 of the scope of patent application, wherein the dielectric constant of the layer is lower than 3.0. 29. The composition according to item 25 of the application, wherein the glass transition temperature of the layer is at least about 350 ° C. 30. A substrate having at least one layer according to item 25 of the scope of patent application. -19- 200424228 Scope of Patent Application Continued Page 31. A microchip including a substrate according to item 30 of the scope of patent application. 32 · — A method for improving (a) the viscosity of a thermosetting component on a substrate, the (a) thermosetting component includes: (1) a monomer of formula I Q Q 和(2)至少一個化學式II之寡聚物或聚合物 -20- 200424228 __ 申請專利範圍續頁Q and (2) at least one oligomer or polymer of chemical formula II -20- 200424228 __ Patent application scope continued -21 - 200424228 申請專利範圍續頁 其中E是一種籠狀化合物;該Q是相同或不同,並從氫 、芳基、分枝芳基和經取代芳基選擇,其中該取代基包 括氫、素、烷基、芳基、經取代芳基、雜芳基、芳基 醚、晞基、決基、统氧基、經垸基、經芳基、經烯基、 罗呈決基、輕基或瘦基;該Gw是芳基或經取代芳基,其中 取代基包括自素和烷基;該h是0至10 ; i是0至10 ; j是0 至10 ;且w是0或1);該方法包括之步驟為: 於該熱固性組份添加(b)黏性促進劑,其包括具有至 少雙官能度之化合物,其中該雙官能度可以是相同或不 同,且該第一一官能度能夠與該熱固性組份(a)交互作用 ,且第二官能度能夠舉該基材交互作用而形成一組合物 ;及 將該組合物應用於基材。 33.根據申請專利範圍第22項之方法,其中該熱固性組份(a) 包括:至少一個化學式III之單體(1)-21-200424228 Continued patent application range where E is a cage compound; the Q is the same or different and is selected from hydrogen, aryl, branched aryl, and substituted aryl, where the substituent includes hydrogen, element , Alkyl, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, decyl, allyloxy, fluorenyl, aryl, alkenyl, rosenyl, light or Leptin; the Gw is an aryl or a substituted aryl, wherein the substituents include a prime and an alkyl; the h is 0 to 10; i is 0 to 10; j is 0 to 10; and w is 0 or 1) ; The method includes the steps of: adding (b) a viscosity promoter to the thermosetting component, which includes a compound having at least difunctionality, wherein the difunctionalities may be the same or different, and the first one functionality Capable of interacting with the thermosetting component (a), and having a second functionality capable of interacting with the substrate to form a composition; and applying the composition to the substrate. 33. The method according to item 22 of the scope of patent application, wherein the thermosetting component (a) comprises: at least one monomer (1) of formula III 和該至少一個化學式IV之寡聚物或聚合物(2) -22- 200424228 ^ 申請專利範圍續頁And the at least one oligomer or polymer of formula IV (2) -22- 200424228 ^ Application for patent scope continued QQ 和至少一個化學式VI之寡聚物或聚合物(2) •23- 200424228 申請專利範圍續頁And at least one oligomer or polymer of formula VI (2) • 23- 200424228 Scope of Patent Application Continued 34. 根據申請專利範圍第33項之方法,其中該至少一個寡聚 物或聚合物(2)是化學式XIV之金剛烷二聚物34. The method according to claim 33, wherein the at least one oligomer or polymer (2) is adamantane dimer of chemical formula XIV Q 35. 根據申請專“利範圍第33項之方法,其中該至少一個寡聚 物或聚合物(2)是化學式XV之金剛烷三聚物Q 35. The method according to claim 33, wherein the at least one oligomer or polymer (2) is an adamantane trimer of chemical formula XV 36.根據申請專利範圍第33項之方法,其中該熱固性組份⑷ -24- 200424228 申請專利範圍續頁 包括(1)化學式VIIA Ri36. The method according to item 33 of the scope of patent application, wherein the thermosetting component--24- 200424228 application for patent scope continued page includes (1) chemical formula VIIA Ri 、化學式IXBChemical formula IXB -25 - 200424228 申請專利範圍續頁 或化學式IXD之金剛烷單體-25-200424228 Scope of Patent Application Continued or Adamantane Monomer of Chemical Formula IXD 及(2)化學式-VIII之金剛烷寡聚物或聚合物 -26- 200424228 申請專利範圍續頁And (2) Adamantane oligomer or polymer of chemical formula-VIII -26- 200424228 Scope of patent application continued -27- 200424228 申請專利範圍續頁 或(1)化學式IXA-27- 200424228 Continued patent application range or (1) Chemical formula IXA 、化學式IXBChemical formula IXB -28- 200424228 申請專利範圍續頁 、化學式IXC-28- 200424228 Scope of patent application continued, chemical formula IXC 或化學式IXD之雙金剛烷單體Bisadamantane monomer of chemical formula IXD 及(2)化學式X之雙金剛烷寡聚物或聚合物 -29- 200424228 申請專利範園續頁And (2) bisadamantane oligomer or polymer of chemical formula X -29- 200424228 5〇 -30- 2〇〇424228 ____ I申請專利範圍續頁 其中該h是0至10 ; i是〇至10 ; j是〇至10 ;各該仏是相同或 不同’並從氣、_素、基、芳基、經取代芳基、雜芳 基、芳基醚、晞基、块基、燒氧基、經燒基、經芳基、 裡烯基、羥炔基、羥基或羧基選擇;各γ和是相同或不 同,並從氫、烷基、芳基、經取代芳基或_素選擇。 37. 根據申請專利範圍第項之方法,其尚包括之步驟為: 藉爐、加熱板、電子束、微波或紫外線輻射熟化該組 合物。 38. 根據申請專利範圍第37項之方法,其中存在該單體。 39. 根據申請專★範圍第36或38項之方法,其中該是芳基 或經取代芳基且該Y是氫、苯基或聯苯基。 4〇·根據申請專利範圍第39項之方法,其中該化學式νπΑ、 VIIB、VIIC或VIID之金剛烷單體係以約3〇至約7〇面積百 分比之量存在,且該化學式VIII之金剛烷寡聚物或聚合 物係以約70至約30面積百分比之量存在,較佳以約4〇至 約60面積百分比的量,且該化學式νίπ之金剛烷寡聚物 或聚合物是^以約60至約40面積百分比的量存在,更佳以 約45至約55¾積百分比的量,且化學式νίπ之金剛燒寡 聚物或聚合物係以約55至約45面積百分比之量存在。 41.根據申請專利範圍第39項之方法,其中該(2)金剛燒寡聚 物或聚合物是屬化學式XVII,其中h是〇或1 200424228 申請專利範圍績頁5〇-30- 2〇〇424228 ____ I apply for a patent continuation page where the h is 0 to 10; i is 0 to 10; j is 0 to 10; each of these 仏 is the same or different 'and from gas, _ prime , Radical, aryl, substituted aryl, heteroaryl, aryl ether, fluorenyl, block, alkoxy, alkynyl, aryl, alkenyl, hydroxyalkynyl, hydroxy, or carboxyl; Each γ and γ are the same or different and are selected from hydrogen, alkyl, aryl, substituted aryl, or hydrogen. 37. The method according to the scope of patent application, further comprising the steps of: curing the composition by using a furnace, a hot plate, an electron beam, microwave or ultraviolet radiation. 38. The method according to item 37 of the application, wherein the monomer is present. 39. The method according to item 36 or 38 of the application, wherein it is an aryl group or a substituted aryl group and the Y is hydrogen, phenyl, or biphenyl. 40. The method according to item 39 of the scope of patent application, wherein the adamantane single system of the chemical formula νπΑ, VIIB, VIIC, or VIID is present in an amount of about 30 to about 70 area percent, and the adamantane of the chemical formula VIII The oligomer or polymer is present in an amount of about 70 to about 30 area percent, preferably in an amount of about 40 to about 60 area percent, and the adamantane oligomer or polymer of the chemical formula νίπ is An amount of 60 to about 40 area percent is present, more preferably in an amount of about 45 to about 55 ¾ percent, and a diamond-fired oligomer or polymer of the chemical formula νίπ is present in an amount of about 55 to about 45 area percent. 41. The method according to item 39 of the scope of patent application, wherein the (2) diamond oligomer or polymer is of formula XVII, where h is 0 or 1 200424228 或該(2)雙金剛烷寡聚物或聚合物是屬化學式XVIII,其 中h是0或1Or the (2) bisadamantane oligomer or polymer is of formula XVIII, where h is 0 or 1 42.根據申請專7利範圍第39項之方法,其中該(2)金剛烷寡聚 > - 物或聚合物是化學式XIX之二聚物 · R R42. The method according to item 39 of the application, wherein the (2) adamantane oligomerization >-substance or polymer is a dimer of chemical formula XIX · R R 200424228 申請專利範圍續頁200424228 Scope of Patent Application 43.根據申請專利範圍第39項之方法,其中該(2)金剛烷寡聚 物或聚合物—是化學式XXI之三聚物 Y43. The method according to item 39 of the scope of patent application, wherein the (2) adamantane oligomer or polymer is a terpolymer Y of the chemical formula XXI R R R 或該(2)雙銮剛烷寡聚物或聚合物是化學式XXII之三聚物 RR R R or the (2) bis-adamantane oligomer or polymer is a terpolymer of chemical formula XXII R R RR R -33- 200424228 申請專利範圍續頁 44.根據申請專利範圍第39項之方法,其中該(2)金剛烷寡聚 物或聚合物是一種化學式XXIII-33- 200424228 Scope of patent application continuation 44. The method according to item 39 of the scope of patent application, wherein the (2) adamantane oligomer or polymer is a chemical formula XXIII 和化學式XXV之混合物Mixture with chemical formula XXV -34- 200424228 申請專利範圍續頁-34- 200424228 Scope of Patent Application Continued 和化學式XXVI之混合物 R RMixture with chemical formula XXVI R R Y /^/=\ R 45.根據申請專利範圍第39項之方法,其中在該熱固性組份 (a)中,該單體(1)和寡聚物或聚合物(2)是金剛烷基單體。 -35- 200424228 申請專利範圍績頁 46.根據申請專利範圍第39項之方法,其中在該熱固性組份 (a)中,該寡聚物或聚合物(2)包括一種化學式XIX之金剛 烷二聚物Y / ^ / = \ R 45. The method according to item 39 of the application, wherein in the thermosetting component (a), the monomer (1) and the oligomer or polymer (2) are adamantyl monomer. -35- 200424228 Patent Application Range Page 46. The method according to item 39 of the patent application range, wherein in the thermosetting component (a), the oligomer or polymer (2) includes an adamantane di of the chemical formula XIX Polymer R RR R 和化學式XXI之金剛烷三聚物的混合物With adamantane trimer of chemical formula XXI R -36- 200424228 申請專利範圍續頁R -36- 200424228 Scope of Patent Application Continued 47. 根據申請專利範圍第46項之方法,其中該苯基上之 RiC^C基團中至少二個是二種不同的異構物,且該金剛 烷單體的二個橋頭碳間的苯基中至少一個是以二種不 同異構物存在。 48. 根據申請專利範圍第47項之方法,其中該至少二個異構 物是間-和對-異構物。 49. 根據申請專利範圍第48項之方法,其包括至少二個該寡 聚物或聚物。 50. 根據申請專%範圍第39項之方法,其中該黏性促進劑(b) 的第一官能度和該第二官能度中少一項是從含Si基、含 N基、含C-0基、羥基及含OC基選擇。 51. 根據申請專利範圍第50項之方法,其中該含Si基較佳是 選自Si-H、Si-Ο及Si-N所組成之群;含N基是選自胺、亞 胺、醯胺和醯亞胺所組成之群;含C-0基是選自羰基、 酉旨、-COOH、具有1至5個碳原子之烷氧基、醚類、縮水 -37- 200424228 中请專利範圍續頁 甘油趟及環氧基所組成之群;該羥 e 签疋紛;且本〇Γ其 $選自埽丙基和乙晞基所組成之群。 β 土 52·根據申請專利範圍第51項之方法, 化學十^ /、中孩含Si基是選自 予式 XI之石夕燒(R2)k(R3)iSi(R4)m(R5)n,並 和 R 夂人 > T K2 ' Κ3 ' R4 心各自獨立表示氫、羥基、不飽和 代七+ 4飽和烷基、經取 、:經取代之燒基(其中該取代基是胺基或環氧基) 諸:飽和或…氧基、不飽和或飽和幾酸基或芳基, Λ 2、R3、〜和r5中至少二個是表示氫 飽和卢&甘、、^ ^ L基飽和或不 • &巩基、孩不飽和烷基或不飽和羧基,且k+H_m+^4 ’或化學式-XII之聚羰矽烷: 0—si—R7 -R647. The method according to item 46 of the scope of patent application, wherein at least two of the RiC ^ C groups on the phenyl group are two different isomers, and the benzene between the two bridgehead carbons of the adamantane monomer is At least one of the radicals exists as two different isomers. 48. The method according to item 47 of the application, wherein the at least two isomers are meta- and para-isomers. 49. A method according to item 48 of the application, which includes at least two such oligomers or polymers. 50. The method according to item 39 of the application, wherein at least one of the first functionality and the second functionality of the adhesion promoter (b) is selected from the group consisting of Si group, N group, and C- 0 group, hydroxyl and OC group-containing choice. 51. The method according to item 50 of the patent application, wherein the Si-containing group is preferably selected from the group consisting of Si-H, Si-O, and Si-N; the N-containing group is selected from the group consisting of amine, imine, and amidine A group consisting of amines and amidines; C-0-containing groups are selected from the group consisting of carbonyl, hydrazone, -COOH, alkoxy groups with 1 to 5 carbon atoms, ethers, shrinkage -37- 200424228 Continued on the group consisting of glycerol and epoxy groups; the hydroxyl group is signed; and this group is selected from the group consisting of propyl and ethyl. β 土 52 · According to the method of item 51 of the scope of patent application, the chemical group containing Si group is selected from Shi Xiyan (R2) k (R3) iSi (R4) m (R5) n of formula XI And R 夂 & > T K2 'KK3' R4 each independently represents hydrogen, hydroxyl, unsaturated hept + 4 saturated alkyl, taken, or substituted: (wherein the substituent is an amine or (Epoxy group) all: saturated or ... oxy, unsaturated or saturated polyacid or aryl, at least two of Λ2, R3, ~ and r5 are hydrogen saturated Or un & polysilynes with succinyl, unsaturated alkyl or unsaturated carboxyl groups, and k + H_m + ^ 4 'or chemical formula -XII: 0-si-R7 -R6 其φ 、R6、Ri2和R!5各自獨立表示經取代或未經取代之亞 境A 環莖燒基、伸乙晞基、伸締丙基或亞芳基;R? 、R9、令1〇、R13及R14各自獨立表示氫原子、烷基、 亞虼基、乙烯基、環烷基、晞丙基、芳基或亞芳基且可 、疋泉性或分枝,R1 1表示有機秒、秒燒基、秒氧基或 有機基團;且p、q、r及S滿足[4Sp+q+r+s< 1〇〇,〇〇〇]的條件 ’且q及r及s可以集體或各自是零; 該含C-0基是從縮水甘油醚或含至少一個羧酸基之不 飽和幾酸的酯類選擇; -38- 200424228 申請專利範圍續頁 該含oc基是乙晞基環族寡聚物或聚合物,其中該環 組基是说淀、芳香族或雜芳香族基;且 該羥基是化學式XIII之酚醛樹脂或寡聚物·· -[R16C6H2(OH)(R17)]「,其中R16是經取代或未經取代之亞 烷基、環亞烷基、乙晞基、晞丙基或芳基,R17是烷基 、亞烷基、伸乙烯基、環亞烷基、伸烯丙基或芳基,且 t= 3-100 〇 53. 根據申請專利範圍第52項之方法,其中該黏性促進劑(b) 是酚醛樹脂或寡聚物。 54. —種至少二老化學式XXXIII之不同異構物的混合物Its φ, R6, Ri2, and R! 5 each independently represent a substituted or unsubstituted sub-situ A-ring stilbene, ethynyl, phenyl, or arylene; R ?, R9, and R1. , R13 and R14 each independently represent a hydrogen atom, an alkyl group, a fluorenylene group, a vinyl group, a cycloalkyl group, an amidinopropyl group, an aryl group or an arylene group, and may be fluorene or branched, and R1 1 represents an organic second, A second group, a second oxy group, or an organic group; and p, q, r, and S satisfy the condition of [4Sp + q + r + s < 10.0, 0〇〇], and q and r and s may be collectively or Each is zero; the C-0-containing group is selected from glycidyl ether or an ester of an unsaturated polyacid containing at least one carboxylic acid group; Group oligomers or polymers, wherein the ring group is said to be an aromatic, aromatic or heteroaromatic group; and the hydroxyl group is a phenolic resin or oligomer of the formula XIII ··-[R16C6H2 (OH) (R17)] ", Where R16 is a substituted or unsubstituted alkylene, cycloalkylene, ethylfluorenyl, methylpropyl, or aryl, and R17 is an alkyl, alkylene, vinylidene, cycloalkylene, Allylic or aryl, And t = 3-100. 53. The method according to item 52 of the scope of the patent application, wherein the adhesion promoter (b) is a phenolic resin or an oligomer. 54.-at least two different isomers of the old chemical formula XXXIII mixture 其中該E是一種籠狀化合物,且各Q是相同或不同並從 氫、芳基、分枝芳基及經取代芳基選擇。 55.根據申請專f利範圍第54項之混合物,其中該混合物包括 至少二種化3學式XXXIII之不同異構物Where E is a cage compound and each Q is the same or different and is selected from hydrogen, aryl, branched aryl, and substituted aryl. 55. The mixture according to item 54 of the application, wherein the mixture includes at least two different isomers of the formula XXXIII 56.根據申請專利範圍第55項之混合物,其中該混合物包括 至少二種化學式XXXIV -39- 200424228 申請專利範圍續頁56. A mixture according to item 55 of the scope of patent application, wherein the mixture includes at least two chemical formulas XXXIV -39- 200424228 、化學式XXXVIChemical formula XXXVI 或化學式XXXVII之不同異構物Or different isomers of formula XXXVII 其中各Y是相同或不同,並從氫、烷基、芳基、經取代 芳基或函素選擇,且各R是相同或不同,並從氫、鹵素 、烷基、芳基、經取代芳基、雜芳基、芳基醚、晞基、 炔基、烷氧基、羥烷基、羥芳基、羥晞基、羥炔基、羥 基或羧基選擇。 57.根據申請專利範圍第54項之混合物,其中該混合物包括 -40- 200424228 申請專利範圍續頁 至少二種化學式XXXVII之不同異構物 QWherein each Y is the same or different, and is selected from hydrogen, alkyl, aryl, substituted aryl, or functional element, and each R is the same or different, and is selected from hydrogen, halogen, alkyl, aryl, substituted aryl Group, heteroaryl, aryl ether, fluorenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyfluorenyl, hydroxyalkynyl, hydroxy, or carboxyl. 57. The mixture according to item 54 of the scope of patent application, wherein the mixture includes -40-200424228. The scope of patent application continues on at least two different isomers of chemical formula XXXVII Q 58.根據申請專利範圍第57項之混合物,其中該混合物包括 鲁 至少二種化學式XXXVIII58. A mixture according to item 57 of the scope of patent application, wherein the mixture includes at least two chemical formulas XXXVIII -41 - 200424228 申請專利範園續頁 或化學式XXXX之不同異構物-41-200424228 Continued page for patent application Fanyuan or different isomers of chemical formula XXXX 其中各Y是相同或不同,並從氫、烷基、芳 芳基或鹵素-選擇,各R是相同或不同,且從 烷基、芳基、經取代芳基、雜芳基、芳基醚 基、燒氧基、輕fe基、經芳基、經晞基、經 或羧基選擇。 基、經取代 氫、函素、 、晞基、決 決基、經基Where each Y is the same or different and is selected from hydrogen, alkyl, arylaryl or halogen, each R is the same or different and is selected from alkyl, aryl, substituted aryl, heteroaryl, aryl ether Radical, alkoxy, light fe, via aryl, via fluorenyl, via or carboxyl. Radical, substituted hydrogen, halogen, fluorenyl, decanyl, hydrocarbyl
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