TW200406031A - Organic compositions - Google Patents
Organic compositions Download PDFInfo
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- TW200406031A TW200406031A TW92110002A TW92110002A TW200406031A TW 200406031 A TW200406031 A TW 200406031A TW 92110002 A TW92110002 A TW 92110002A TW 92110002 A TW92110002 A TW 92110002A TW 200406031 A TW200406031 A TW 200406031A
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- 239000000203 mixture Substances 0.000 title claims abstract description 248
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 132
- 229920000642 polymer Polymers 0.000 claims abstract description 118
- -1 poly(2-vinylnaphthalene) Polymers 0.000 claims abstract description 108
- 125000003118 aryl group Chemical group 0.000 claims abstract description 102
- 239000000178 monomer Substances 0.000 claims abstract description 98
- 229920001519 homopolymer Polymers 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000003361 porogen Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000003989 dielectric material Substances 0.000 claims abstract description 36
- 229920001610 polycaprolactone Polymers 0.000 claims abstract description 22
- 239000004632 polycaprolactone Substances 0.000 claims abstract description 17
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 9
- 239000004793 Polystyrene Substances 0.000 claims abstract description 8
- 229920002223 polystyrene Polymers 0.000 claims abstract description 8
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 7
- 229920000728 polyester Polymers 0.000 claims abstract description 6
- 229920000570 polyether Polymers 0.000 claims abstract description 5
- 229920000515 polycarbonate Polymers 0.000 claims abstract description 4
- 239000004417 polycarbonate Substances 0.000 claims abstract description 4
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920000747 poly(lactic acid) Polymers 0.000 claims abstract description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 claims description 254
- 239000011148 porous material Substances 0.000 claims description 108
- 239000003795 chemical substances by application Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 67
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 63
- 229920002098 polyfluorene Polymers 0.000 claims description 57
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexyloxide Natural products O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 50
- 150000001875 compounds Chemical class 0.000 claims description 48
- 239000002904 solvent Substances 0.000 claims description 46
- 239000002318 adhesion promoter Substances 0.000 claims description 44
- 125000000217 alkyl group Chemical group 0.000 claims description 42
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 36
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 36
- 239000001257 hydrogen Substances 0.000 claims description 35
- 239000004615 ingredient Substances 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 125000003107 substituted aryl group Chemical group 0.000 claims description 27
- 238000000354 decomposition reaction Methods 0.000 claims description 19
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical group CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 125000000304 alkynyl group Chemical group 0.000 claims description 16
- 125000005843 halogen group Chemical group 0.000 claims description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052702 rhenium Inorganic materials 0.000 claims description 15
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 15
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 15
- 125000003545 alkoxy group Chemical group 0.000 claims description 14
- 125000001424 substituent group Chemical group 0.000 claims description 13
- 125000002947 alkylene group Chemical group 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910000077 silane Inorganic materials 0.000 claims description 12
- 229920002554 vinyl polymer Polymers 0.000 claims description 12
- 125000003342 alkenyl group Chemical group 0.000 claims description 11
- 125000001072 heteroaryl group Chemical group 0.000 claims description 11
- 125000004429 atom Chemical group 0.000 claims description 10
- 125000004122 cyclic group Chemical group 0.000 claims description 10
- 125000000524 functional group Chemical group 0.000 claims description 10
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 150000008378 aryl ethers Chemical class 0.000 claims description 9
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 125000005027 hydroxyaryl group Chemical group 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 8
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 7
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 6
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004305 biphenyl Substances 0.000 claims description 6
- 235000010290 biphenyl Nutrition 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 6
- 125000005016 hydroxyalkynyl group Chemical group 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 5
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 claims description 5
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 5
- BTFFUEGVQBZTMY-UHFFFAOYSA-N ethenyl 3-methylbutanoate Chemical group CC(C)CC(=O)OC=C BTFFUEGVQBZTMY-UHFFFAOYSA-N 0.000 claims description 5
- 125000005020 hydroxyalkenyl group Chemical group 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 claims description 5
- 235000021286 stilbenes Nutrition 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 150000004756 silanes Chemical class 0.000 claims description 4
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 claims description 4
- 238000006467 substitution reaction Methods 0.000 claims description 4
- QESYYRDPBSQZHZ-UHFFFAOYSA-N 2-ethenyl-9h-fluorene Chemical compound C1=CC=C2C3=CC=C(C=C)C=C3CC2=C1 QESYYRDPBSQZHZ-UHFFFAOYSA-N 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- OGOYZCQQQFAGRI-UHFFFAOYSA-N 9-ethenylanthracene Chemical compound C1=CC=C2C(C=C)=C(C=CC=C3)C3=CC2=C1 OGOYZCQQQFAGRI-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 3
- 125000002243 cyclohexanonyl group Chemical group *C1(*)C(=O)C(*)(*)C(*)(*)C(*)(*)C1(*)* 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- HDBWAWNLGGMZRQ-UHFFFAOYSA-N p-Vinylbiphenyl Chemical group C1=CC(C=C)=CC=C1C1=CC=CC=C1 HDBWAWNLGGMZRQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 claims description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 claims description 2
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 claims description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims 6
- DXIJHCSGLOHNES-UHFFFAOYSA-N 3,3-dimethylbut-1-enylbenzene Chemical compound CC(C)(C)C=CC1=CC=CC=C1 DXIJHCSGLOHNES-UHFFFAOYSA-N 0.000 claims 2
- 150000007513 acids Chemical class 0.000 claims 2
- 125000000732 arylene group Chemical group 0.000 claims 2
- 125000003700 epoxy group Chemical group 0.000 claims 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims 2
- 125000004417 unsaturated alkyl group Chemical group 0.000 claims 2
- NXXNVJDXUHMAHU-UHFFFAOYSA-N 1-anthracen-9-ylethanone Chemical compound C1=CC=C2C(C(=O)C)=C(C=CC=C3)C3=CC2=C1 NXXNVJDXUHMAHU-UHFFFAOYSA-N 0.000 claims 1
- YWYRVWBEIODDTJ-UHFFFAOYSA-N 1-ethenyl-9h-fluorene Chemical compound C1C2=CC=CC=C2C2=C1C(C=C)=CC=C2 YWYRVWBEIODDTJ-UHFFFAOYSA-N 0.000 claims 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 claims 1
- SIJSIIFAIYLAQW-UHFFFAOYSA-N 1-tert-butyl-9h-fluorene Chemical compound C12=CC=CC=C2CC2=C1C=CC=C2C(C)(C)C SIJSIIFAIYLAQW-UHFFFAOYSA-N 0.000 claims 1
- NXYKGDRICYQGII-UHFFFAOYSA-N 2,2,3,3-tetraphenylbutanedioic acid Chemical compound C=1C=CC=CC=1C(C(C(O)=O)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C(=O)O)C1=CC=CC=C1 NXYKGDRICYQGII-UHFFFAOYSA-N 0.000 claims 1
- SZZMXRFXGSFNRB-UHFFFAOYSA-N C(C)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC=CC=2C3=CC=CC=C3CC12 Chemical compound C(C)C1=C(C=2CC3=CC=CC=C3C2C=C1)C1=CC=CC=2C3=CC=CC=C3CC12 SZZMXRFXGSFNRB-UHFFFAOYSA-N 0.000 claims 1
- 229920002396 Polyurea Polymers 0.000 claims 1
- 229920002125 Sokalan® Polymers 0.000 claims 1
- 241001122767 Theaceae Species 0.000 claims 1
- DKNWSYNQZKUICI-UHFFFAOYSA-N amantadine Chemical compound C1C(C2)CC3CC2CC1(N)C3 DKNWSYNQZKUICI-UHFFFAOYSA-N 0.000 claims 1
- 229960003805 amantadine Drugs 0.000 claims 1
- 125000005418 aryl aryl group Chemical group 0.000 claims 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- LFDPAKPLYFIEPT-UHFFFAOYSA-N ethene pentanoic acid Chemical compound C=C.C(CCCC)(=O)O LFDPAKPLYFIEPT-UHFFFAOYSA-N 0.000 claims 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 claims 1
- 125000004494 ethyl ester group Chemical group 0.000 claims 1
- BHIWKHZACMWKOJ-UHFFFAOYSA-N methyl isobutyrate Chemical compound COC(=O)C(C)C BHIWKHZACMWKOJ-UHFFFAOYSA-N 0.000 claims 1
- 238000006384 oligomerization reaction Methods 0.000 claims 1
- 239000004584 polyacrylic acid Substances 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 abstract description 31
- 229920000058 polyacrylate Polymers 0.000 abstract description 2
- 229920001157 Poly(2-vinylnaphthalene) Polymers 0.000 abstract 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 abstract 1
- 229920002492 poly(sulfone) Polymers 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 89
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 68
- 238000002360 preparation method Methods 0.000 description 64
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 62
- 239000000243 solution Substances 0.000 description 60
- 238000006243 chemical reaction Methods 0.000 description 59
- 239000010410 layer Substances 0.000 description 55
- 239000008096 xylene Substances 0.000 description 54
- 239000011541 reaction mixture Substances 0.000 description 51
- 238000004458 analytical method Methods 0.000 description 46
- 229910052757 nitrogen Inorganic materials 0.000 description 45
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 43
- 239000000047 product Substances 0.000 description 40
- 238000000576 coating method Methods 0.000 description 37
- 239000010408 film Substances 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 30
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 27
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 20
- 239000007787 solid Substances 0.000 description 20
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 19
- 239000000523 sample Substances 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 239000003054 catalyst Substances 0.000 description 16
- 239000012074 organic phase Substances 0.000 description 16
- 239000003208 petroleum Substances 0.000 description 16
- 238000005227 gel permeation chromatography Methods 0.000 description 15
- 239000007788 liquid Substances 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 238000005481 NMR spectroscopy Methods 0.000 description 14
- 238000003756 stirring Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000003999 initiator Substances 0.000 description 11
- 238000001556 precipitation Methods 0.000 description 11
- 150000003738 xylenes Chemical class 0.000 description 11
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 150000001345 alkine derivatives Chemical group 0.000 description 9
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 9
- 238000009835 boiling Methods 0.000 description 9
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 9
- 229920003023 plastic Polymers 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 229910015900 BF3 Inorganic materials 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical compound C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 8
- 239000004809 Teflon Substances 0.000 description 8
- 229920006362 Teflon® Polymers 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 8
- 238000001914 filtration Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000011968 lewis acid catalyst Substances 0.000 description 8
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000010432 diamond Substances 0.000 description 7
- 239000000706 filtrate Substances 0.000 description 7
- 238000002309 gasification Methods 0.000 description 7
- 229920002521 macromolecule Polymers 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229920002857 polybutadiene Polymers 0.000 description 7
- 238000012552 review Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 230000004580 weight loss Effects 0.000 description 7
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 6
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 239000005062 Polybutadiene Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000012456 homogeneous solution Substances 0.000 description 6
- 150000002430 hydrocarbons Chemical group 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 150000001335 aliphatic alkanes Chemical class 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 238000010943 off-gassing Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 5
- 238000004262 preparative liquid chromatography Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 230000001588 bifunctional effect Effects 0.000 description 4
- KZMGYPLQYOPHEL-UHFFFAOYSA-N boron trifluoride etherate Substances FB(F)F.CCOCC KZMGYPLQYOPHEL-UHFFFAOYSA-N 0.000 description 4
- 125000004799 bromophenyl group Chemical group 0.000 description 4
- 239000000539 dimer Substances 0.000 description 4
- 229910000514 dolomite Inorganic materials 0.000 description 4
- 239000010459 dolomite Substances 0.000 description 4
- 238000010828 elution Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000012065 filter cake Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000548 poly(silane) polymer Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- UEVKWTASYVIROP-UHFFFAOYSA-N 1-bromo-2-butylbenzene Chemical compound CCCCC1=CC=CC=C1Br UEVKWTASYVIROP-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 239000004342 Benzoyl peroxide Substances 0.000 description 3
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 3
- 229910001573 adamantine Inorganic materials 0.000 description 3
- 150000001412 amines Chemical group 0.000 description 3
- 235000019400 benzoyl peroxide Nutrition 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 3
- 239000006184 cosolvent Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000004147 desorption mass spectrometry Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- PPXUHEORWJQRHJ-UHFFFAOYSA-N ethyl isovalerate Chemical compound CCOC(=O)CC(C)C PPXUHEORWJQRHJ-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004128 high performance liquid chromatography Methods 0.000 description 3
- 150000007857 hydrazones Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000005375 organosiloxane group Chemical group 0.000 description 3
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002239 polyacrylonitrile Polymers 0.000 description 3
- 229920001709 polysilazane Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000011877 solvent mixture Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- RKSOPLXZQNSWAS-UHFFFAOYSA-N tert-butyl bromide Chemical compound CC(C)(C)Br RKSOPLXZQNSWAS-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 125000003944 tolyl group Chemical group 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XILIYVSXLSWUAI-UHFFFAOYSA-N 2-(diethylamino)ethyl n'-phenylcarbamimidothioate;dihydrobromide Chemical compound Br.Br.CCN(CC)CCSC(N)=NC1=CC=CC=C1 XILIYVSXLSWUAI-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 2
- 241000255789 Bombyx mori Species 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 125000002015 acyclic group Chemical group 0.000 description 2
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 2
- 150000001409 amidines Chemical class 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 125000001246 bromo group Chemical group Br* 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000001460 carbon-13 nuclear magnetic resonance spectrum Methods 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZICQBHNGXDOVJF-UHFFFAOYSA-N diamantane Chemical compound C1C2C3CC(C4)CC2C2C4C3CC1C2 ZICQBHNGXDOVJF-UHFFFAOYSA-N 0.000 description 2
- AOBOMOUUYYHMOX-UHFFFAOYSA-N diethylboron Chemical compound CC[B]CC AOBOMOUUYYHMOX-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 239000003995 emulsifying agent Substances 0.000 description 2
- FAMRKDQNMBBFBR-UHFFFAOYSA-N ethyl n-ethoxycarbonyliminocarbamate Chemical compound CCOC(=O)N=NC(=O)OCC FAMRKDQNMBBFBR-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000005059 halophenyl group Chemical group 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 238000000589 high-performance liquid chromatography-mass spectrometry Methods 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 2
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000001404 mediated effect Effects 0.000 description 2
- 229940017219 methyl propionate Drugs 0.000 description 2
- IQCYANORSDPPDT-UHFFFAOYSA-N methyl(silyl)silane Chemical class C[SiH2][SiH3] IQCYANORSDPPDT-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002077 nanosphere Substances 0.000 description 2
- 239000012454 non-polar solvent Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- UQPUONNXJVWHRM-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 UQPUONNXJVWHRM-UHFFFAOYSA-N 0.000 description 2
- WDZOPGZTGVJDMZ-FOCLMDBBSA-N phenyl (ne)-n-phenoxycarbonyliminocarbamate Chemical compound C=1C=CC=CC=1OC(=O)/N=N/C(=O)OC1=CC=CC=C1 WDZOPGZTGVJDMZ-FOCLMDBBSA-N 0.000 description 2
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920001195 polyisoprene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- VVWRJUBEIPHGQF-UHFFFAOYSA-N propan-2-yl n-propan-2-yloxycarbonyliminocarbamate Chemical compound CC(C)OC(=O)N=NC(=O)OC(C)C VVWRJUBEIPHGQF-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- QKSQWQOAUQFORH-UHFFFAOYSA-N tert-butyl n-[(2-methylpropan-2-yl)oxycarbonylimino]carbamate Chemical compound CC(C)(C)OC(=O)N=NC(=O)OC(C)(C)C QKSQWQOAUQFORH-UHFFFAOYSA-N 0.000 description 2
- JAELLLITIZHOGQ-UHFFFAOYSA-N tert-butyl propanoate Chemical compound CCC(=O)OC(C)(C)C JAELLLITIZHOGQ-UHFFFAOYSA-N 0.000 description 2
- 239000012815 thermoplastic material Substances 0.000 description 2
- NRTLTGGGUQIRRT-UHFFFAOYSA-N triethylazanium;bromide Chemical compound [Br-].CC[NH+](CC)CC NRTLTGGGUQIRRT-UHFFFAOYSA-N 0.000 description 2
- 239000013638 trimer Substances 0.000 description 2
- JKYQJWASCFMEMZ-BYPYZUCNSA-N (2r)-2-(2-acetylhydrazinyl)-3-sulfanylpropanoic acid Chemical compound CC(=O)NN[C@@H](CS)C(O)=O JKYQJWASCFMEMZ-BYPYZUCNSA-N 0.000 description 1
- USVVENVKYJZFMW-ONEGZZNKSA-N (e)-carboxyiminocarbamic acid Chemical compound OC(=O)\N=N\C(O)=O USVVENVKYJZFMW-ONEGZZNKSA-N 0.000 description 1
- WQONPSCCEXUXTQ-UHFFFAOYSA-N 1,2-dibromobenzene Chemical compound BrC1=CC=CC=C1Br WQONPSCCEXUXTQ-UHFFFAOYSA-N 0.000 description 1
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- ANLVEXKNRYNLDH-UHFFFAOYSA-N 1,3-dioxonan-2-one Chemical compound O=C1OCCCCCCO1 ANLVEXKNRYNLDH-UHFFFAOYSA-N 0.000 description 1
- SWJPEBQEEAHIGZ-UHFFFAOYSA-N 1,4-dibromobenzene Chemical compound BrC1=CC=C(Br)C=C1 SWJPEBQEEAHIGZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical class CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- PAOHAQSLJSMLAT-UHFFFAOYSA-N 1-butylperoxybutane Chemical compound CCCCOOCCCC PAOHAQSLJSMLAT-UHFFFAOYSA-N 0.000 description 1
- VFWCMGCRMGJXDK-UHFFFAOYSA-N 1-chlorobutane Chemical compound CCCCCl VFWCMGCRMGJXDK-UHFFFAOYSA-N 0.000 description 1
- PUFWGUZSDHANBX-UHFFFAOYSA-N 1-phenyl-9h-fluorene Chemical compound C=12CC3=CC=CC=C3C2=CC=CC=1C1=CC=CC=C1 PUFWGUZSDHANBX-UHFFFAOYSA-N 0.000 description 1
- MAHPVQDVMLWUAG-UHFFFAOYSA-N 1-phenylhexan-1-one Chemical compound CCCCCC(=O)C1=CC=CC=C1 MAHPVQDVMLWUAG-UHFFFAOYSA-N 0.000 description 1
- NPZVKUCLMUDACZ-UHFFFAOYSA-N 1-tert-butyl-2-(2-phenylethenyl)benzene Chemical compound CC(C)(C)C1=CC=CC=C1C=CC1=CC=CC=C1 NPZVKUCLMUDACZ-UHFFFAOYSA-N 0.000 description 1
- NITMACBPVVUGOJ-UHFFFAOYSA-N 2,2,2-trifluoroethanimidamide Chemical compound NC(=N)C(F)(F)F NITMACBPVVUGOJ-UHFFFAOYSA-N 0.000 description 1
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 1
- NAMYKGVDVNBCFQ-UHFFFAOYSA-N 2-bromopropane Chemical compound CC(C)Br NAMYKGVDVNBCFQ-UHFFFAOYSA-N 0.000 description 1
- BORPGWODBONHQU-UHFFFAOYSA-N 2-ethyl-1-naphthalen-1-yl-9H-fluorene Chemical compound C1=CC=C2C(C3=C4C(C5=CC=CC=C5C4)=CC=C3CC)=CC=CC2=C1 BORPGWODBONHQU-UHFFFAOYSA-N 0.000 description 1
- BEKXVQRVZUYDLK-UHFFFAOYSA-N 2-hydroxyethyl 2-methylpropanoate Chemical compound CC(C)C(=O)OCCO BEKXVQRVZUYDLK-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical class CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-M 3-Methylbutanoic acid Natural products CC(C)CC([O-])=O GWYFCOCPABKNJV-UHFFFAOYSA-M 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- UQRONKZLYKUEMO-UHFFFAOYSA-N 4-methyl-1-(2,4,6-trimethylphenyl)pent-4-en-2-one Chemical group CC(=C)CC(=O)Cc1c(C)cc(C)cc1C UQRONKZLYKUEMO-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 101000734334 Arabidopsis thaliana Protein disulfide isomerase-like 1-1 Proteins 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- DBAMUTGXJAWDEA-UHFFFAOYSA-N Butynol Chemical compound CCC#CO DBAMUTGXJAWDEA-UHFFFAOYSA-N 0.000 description 1
- KDCXULAEBFXIBC-UHFFFAOYSA-N C1(CCCCC1)N1C(CCC1)=O.[C] Chemical compound C1(CCCCC1)N1C(CCC1)=O.[C] KDCXULAEBFXIBC-UHFFFAOYSA-N 0.000 description 1
- 101150041968 CDC13 gene Proteins 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- 101000609815 Caenorhabditis elegans Protein disulfide-isomerase 1 Proteins 0.000 description 1
- 101000609840 Caenorhabditis elegans Protein disulfide-isomerase 2 Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000003747 Grignard reaction Methods 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical class CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- JJWSNOOGIUMOEE-UHFFFAOYSA-N Monomethylmercury Chemical compound [Hg]C JJWSNOOGIUMOEE-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 229920000361 Poly(styrene)-block-poly(ethylene glycol) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 238000003477 Sonogashira cross-coupling reaction Methods 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 125000001118 alkylidene group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- YCOXTKKNXUZSKD-UHFFFAOYSA-N as-o-xylenol Natural products CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 238000010533 azeotropic distillation Methods 0.000 description 1
- 125000005604 azodicarboxylate group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WHEATZOONURNGF-UHFFFAOYSA-N benzocyclobutadiene Chemical compound C1=CC=C2C=CC2=C1 WHEATZOONURNGF-UHFFFAOYSA-N 0.000 description 1
- 238000006480 benzoylation reaction Methods 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- SIIVGPQREKVCOP-UHFFFAOYSA-N but-1-en-1-ol Chemical compound CCC=CO SIIVGPQREKVCOP-UHFFFAOYSA-N 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000000451 chemical ionisation Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012468 concentrated sample Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 150000003997 cyclic ketones Chemical class 0.000 description 1
- 150000001931 cyclobutenes Chemical class 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- IIRFCWANHMSDCG-UHFFFAOYSA-N cyclooctanone Chemical compound O=C1CCCCCCC1 IIRFCWANHMSDCG-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- FAMRKDQNMBBFBR-BQYQJAHWSA-N diethyl azodicarboxylate Substances CCOC(=O)\N=N\C(=O)OCC FAMRKDQNMBBFBR-BQYQJAHWSA-N 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical class OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- NFCHYERDRQUCGJ-UHFFFAOYSA-N dimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[SiH](OC)CCCOCC1CO1 NFCHYERDRQUCGJ-UHFFFAOYSA-N 0.000 description 1
- NCBFTYFOPLPRBX-UHFFFAOYSA-N dimethyl azodicarboxylate Substances COC(=O)N=NC(=O)OC NCBFTYFOPLPRBX-UHFFFAOYSA-N 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 238000007336 electrophilic substitution reaction Methods 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- MOSXLDGILGBOSZ-UHFFFAOYSA-N ethenyl-methyl-phenylsilicon Chemical compound C=C[Si](C)C1=CC=CC=C1 MOSXLDGILGBOSZ-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011552 falling film Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KETWBQOXTBGBBN-UHFFFAOYSA-N hex-1-enylbenzene Chemical compound CCCCC=CC1=CC=CC=C1 KETWBQOXTBGBBN-UHFFFAOYSA-N 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical class FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229940030980 inova Drugs 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- SNHMUERNLJLMHN-UHFFFAOYSA-N iodobenzene Chemical compound IC1=CC=CC=C1 SNHMUERNLJLMHN-UHFFFAOYSA-N 0.000 description 1
- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- JJTUDXZGHPGLLC-UHFFFAOYSA-N lactide Chemical compound CC1OC(=O)C(C)OC1=O JJTUDXZGHPGLLC-UHFFFAOYSA-N 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- NCBFTYFOPLPRBX-AATRIKPKSA-N methyl (ne)-n-methoxycarbonyliminocarbamate Chemical compound COC(=O)\N=N\C(=O)OC NCBFTYFOPLPRBX-AATRIKPKSA-N 0.000 description 1
- DSWNRHCOGVRDOE-UHFFFAOYSA-N n,n-dimethylmethanimidamide Chemical compound CN(C)C=N DSWNRHCOGVRDOE-UHFFFAOYSA-N 0.000 description 1
- 239000007908 nanoemulsion Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- INFDPOAKFNIJBF-UHFFFAOYSA-N paraquat Chemical compound C1=C[N+](C)=CC=C1C1=CC=[N+](C)C=C1 INFDPOAKFNIJBF-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- WWQAGDWTJOKFQB-UHFFFAOYSA-N penta-1,2,3-triene Chemical group CC=C=C=C WWQAGDWTJOKFQB-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000379 polypropylene carbonate Polymers 0.000 description 1
- 229920006216 polyvinyl aromatic Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- FWLKYEAOOIPJRL-UHFFFAOYSA-N prop-1-yn-1-ol Chemical compound CC#CO FWLKYEAOOIPJRL-UHFFFAOYSA-N 0.000 description 1
- RQAGEUFKLGHJPA-UHFFFAOYSA-N prop-2-enoylsilicon Chemical compound [Si]C(=O)C=C RQAGEUFKLGHJPA-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 230000028327 secretion Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 150000003440 styrenes Chemical group 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- NBRKLOOSMBRFMH-UHFFFAOYSA-N tert-butyl chloride Chemical compound CC(C)(C)Cl NBRKLOOSMBRFMH-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- UFTFJSFQGQCHQW-UHFFFAOYSA-N triformin Chemical compound O=COCC(OC=O)COC=O UFTFJSFQGQCHQW-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000001969 wideband alternating-phase low-power technique for zero residual splitting Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
200406031 ⑴ 玖、發明說明 (發明說明應敘明:發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 審查中之申請案權益 本案為審查中之10/158513,申請日2002年5月30日之部分 連續案,該案請求下列審查中共同讓與之臨時專利申請 案之權益:60/294864,申請曰2001年5月30日;60/350187,申請 日 2002 年 1 月 15 日;60/350557,申請日 2002 年 1 月 22 日;60/353011 ,2002 年 1 月 30 日;60/376219,2002 年 4 月 29 日;以及 60/378424 ,申請日2002年5月7日,全部以引用方式併入此處。 技術領域 本發明係有關半導體元件,特別係有關具有有機低介 電常數材料之半導體元件及其製造方法。 先前技術 為了提高半導體元件之效能與速度,半導體元件製造 商尋求縮小互連裝置之線寬及間距,同時將傳輸損耗減 至最低,且減少互連裝置的電容偶合。一種減少電力耗 用且降低電容之方法係降低分隔互連裝置之絕緣材料或 介電材料之介電常數(也稱作為「k」)。特別希望絕緣材 料具有低介電常數,低介電常數典型允許信號傳播更快 速、導線間之電容及串音減低、以及驅動積體電路要求 的電壓減低。 因空氣具有介電常數=1.0,主要目的係將絕緣材料之介 電常數降至理論極限=1.0,業界’已知若干降低絕緣材料 之介電常數之方法。此等技術包括添加氟等元素至組合 物,來降低主體材料之介電常數。其它降低k值方法包括 200406031 (2) 發明說明_頁:: 使用其它介電材料基體。另一種辨法係導入孔隙至基體 内部。 因此隨著互連裝置線寬的增加,也要求伴隨降低絕緣 材料介電常數,俾達成未來半導體元件所需效能與速度 的改進。例如具有互連裝置線寬0.13或0.10微米及以下之 半導體元件希望絕緣材料具有介電常數(k)<3。 目前使用二氧化矽(SiO)及二氧化矽之改性版本例如氟 化二氧化矽或氟化矽玻璃(後文稱之為FSG)。此等氧化物 具有介電常數約3.5至4.0之範圍,常用於半導體元件作為 介電相1料。雖然二氧化矽及FSG具有忍受半導體元件製造 上之熱循環以及處理步驟要求的機械及熱穩定性,但業 界仍然期望有具有更低介電常數之材料。 用於沉積介電材料之方法可劃分為兩大類:旋上沉積 (後文稱之為SOD)及化學氣相沉積(後文稱之為CVD)。曾 經努力發展較低介電常數材料,包括變更化學組成(有機 、無機、有機/無機攙合物)或改變介電基體(有孔、無孔) 。表1摘述若干具有介電常數於2.0至3.5範圍之材料之發 展(PE=電漿輔助;HDP=高密度電漿)。但表1所示公開文 獻揭示之介電材料及基體皆未具有多項期望之物理及化 學性質組合,甚至為有效介電材料所需性質組合,例如 機械穩定性較南、熱穩定性南、玻璃過渡溫度面、模量 或硬度高,同時仍然可被溶劑媒合、旋塗或沉積至基板 、晶圓或其它表面上。因此期望研究其它化合物或材料 其可用作為介電材料及介電層,即使該等化合物或材料 200406031 發明說明績頁> 目前以其存在形式尚未被預期可用作為介電材料。 ----------- 材料 — 氟化氧化矽 —_(Si〇F)__ 氫矽倍半氧烷 (HSQ) 沉積方法 PE-CVD ; HDP-CVD ~~SOD"""" 介電常數(k) ~3.3-3.5^ ~~2.0-2.5~ — - --—____ 參考文獻 ; 5?370,9〇ΓΧ~ 5,486,564 ;國際專利公告案w〇 00/40637 ; E.S· Moyer 等人,「超低 k 值 以矽倍半氧烷為主之樹脂」,低介電常 數<0.15微米互連材料之構想及需要:今 曰與下個千禧年,美國化學會贊助 —128-146 頁(1999 年 11 月 14-17 日) 甲基矽倍半氧 烷(MSQ) SOD 2.4-2.7 美國專利6,143,855 聚有機吵 SOD 2.5-2.6 美國專利6,225,238 氣化非日ET石灭 (a-C:F) HDP-CVD 2.3 美國專利5,900,290 冬并5哀丁缔 (BCB) SOD 2.4-2.7 美國專利5,225,586 聚伸芳基_ (ΡΑΕ) SOD 2.4 美國專利 5,986,045 ; 5,874,516 及 5,658,994 派立林 (Parylene) (N 及 F) CVD 2.4 美國專利5,268,202 水冬缔類 SOD 2.6 美國專利 5,965,679 及 6,288,188B1 ;及 Waeterloos等人,「多孔席爾克(SiLK)半 導體介電材料之積體可行性」,2001年 國際互連技術會議議事錄253-254頁 (2001 年) 熱固性苯幷環 丁烯類、聚芳 烯類、熱固性 全氟乙歸·單體 . --------- SOD 2.3 國際專利公告案WO 00/31183 聚(本基峻今林) ,有機聚砂氧 SOD 2.3-3.0 美國專利 5,776,990 ; 5,895,263 ; 6,107,357及6,342,454 ;及美國專利公告 案 2001/0040294 有機聚矽氧 SOD 未報告 美國專利6,271,273 有機及無機 材料 SOD 2.0-2.5 美國專利6,156,812 200406031 發明說明續頁. .vss * νζ, ^ 、 * 、〆、 有機及無機 材料 SOD 2.0-2.3 美國專利6,171,687 有機材料 SOD 未報告 美國專利6,172,128 有機 SOD 2.12 美國專利6,214,746 有機碎倍半 氧燒 CVD,SOD <3.9 WO 01/29052 氟矽倍半氧烷 CVD,SOD <3.9 WO 01/29141 不幸目前正在發展中之無數具有介電常數為2.0至3.5之 有機SOD系統就前述機械及熱性質等方面有某些缺點; 因此業界需要開發具有改良之製法及效能可供用於此種 介電常數範圍之介電薄膜。此外業界需要具有低介電常 數擴充性之材料,換言之可降至甚至更低介電常數例如 2.7至2.5至2.2至2.0及以下之材料。200406031 玖 发明 Description of the invention (The description of the invention shall state: the technical field, prior art, content, implementation, and drawings of the invention are briefly explained) The rights of the application under review This case is under review 10/158513, the application date of 2002 Part of the serial case on May 30, 2015, the case requested the following examination of the rights of the temporary patent application jointly assigned: 60/294864, application date May 30, 2001; 60/350187, application date January 2002 15; 60/350557, application date January 22, 2002; 60/353011, January 30, 2002; 60/376219, April 29, 2002; and 60/378424, application date May 7, 2002 Date, all incorporated herein by reference. TECHNICAL FIELD The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having an organic low dielectric constant material and a method for manufacturing the same. Prior art In order to improve the performance and speed of semiconductor devices, semiconductor device manufacturers sought to reduce the line width and pitch of interconnect devices, while minimizing transmission loss, and reducing the capacitive coupling of interconnect devices. One way to reduce power consumption and reduce capacitance is to lower the dielectric constant (also known as "k") of the insulating or dielectric material separating the interconnects. It is particularly desirable for insulating materials to have low dielectric constants. Low dielectric constants typically allow faster signal propagation, reduced capacitance and crosstalk between conductors, and reduced voltage required to drive integrated circuits. Since the air has a dielectric constant = 1.0, the main purpose is to reduce the dielectric constant of the insulating material to a theoretical limit = 1.0. The industry ’s known several methods to reduce the dielectric constant of the insulating material. These techniques include adding elements such as fluorine to the composition to reduce the dielectric constant of the host material. Other methods to reduce the value of k include 200406031 (2) Description of the Invention_Page :: Use of other dielectric materials. Another method is to introduce pores into the matrix. Therefore, with the increase of the line width of the interconnection device, it is also required to accompany the reduction of the dielectric constant of the insulating material, so as to achieve the improvement of the performance and speed required for future semiconductor devices. For example, a semiconductor element having an interconnect device with a line width of 0.13 or 0.10 micrometers or less desirably has a dielectric constant (k) < 3 for the insulating material. Silicon dioxide (SiO) and modified versions of silicon dioxide such as fluorinated silica or fluorinated silica glass (hereinafter referred to as FSG) are currently used. These oxides have a dielectric constant in the range of about 3.5 to 4.0 and are often used in semiconductor devices as a dielectric material. Although silicon dioxide and FSG have the mechanical and thermal stability required to withstand the thermal cycling and processing steps required in semiconductor device manufacturing, the industry still expects materials with lower dielectric constants. The methods used to deposit dielectric materials can be divided into two broad categories: spin-on deposition (hereinafter referred to as SOD) and chemical vapor deposition (hereinafter referred to as CVD). Efforts have been made to develop lower dielectric constant materials, including changing the chemical composition (organic, inorganic, organic / inorganic admixtures) or changing the dielectric matrix (porous, non-porous). Table 1 summarizes the development of certain materials with dielectric constants ranging from 2.0 to 3.5 (PE = plasma assisted; HDP = high-density plasma). However, the dielectric materials and substrates disclosed in the public documents shown in Table 1 do not have many desired combinations of physical and chemical properties, or even the combination of properties required for effective dielectric materials, such as mechanical stability, thermal stability, and glass. The transition temperature surface, modulus, or hardness is high, while still being solvent-mediated, spin-coated, or deposited on a substrate, wafer, or other surface. Therefore, it is expected to study other compounds or materials which can be used as dielectric materials and dielectric layers, even if these compounds or materials are in the form of their existence is not currently expected to be used as a dielectric material. ----------- Materials — Fluorinated Silicon Oxide — _ (Si〇F) __ Hydrogen Silsesquioxane (HSQ) Deposition Method PE-CVD ; HDP-CVD ~~ SOD " " " " Dielectric Constant (k) ~ 3.3-3.5 ^ ~~ 2.0-2.5 ~ —----____ References; 5? 370,9〇Γ × ~ 5,486,564; International Patent Bulletin w00 / 40637; ES · Moyer et al., "Ultra-low k-based resins based on silsesquioxane", the concept and needs of low dielectric constant < 0.15 micron interconnect materials: today and next millennium, American Chemical Society Sponsor—Page 128-146 (14-17 November 1999) Methylsilsesquioxane (MSQ) SOD 2.4-2.7 US Patent 6,143,855 Polyorganic SOD 2.5-2.6 US Patent 6,225,238 Gasification Non-Japanese ET Shi Mi (aC: F) HDP-CVD 2.3 U.S. Patent 5,900,290 Dong Bing 5 (BCB) SOD 2.4-2.7 U.S. Patent 5,225,586 Poly-Arylenyl (PΑE) SOD 2.4 U.S. Patent 5,986,045; 5,874,516 and 5,658,994 Parylene (Parylene) (N and F) CVD 2.4 U.S. Patent 5,268,202 SOD 2.6, U.S. Patents 5,965,679 and 6,288,188B1; and Waiterloos et al., "Porous Schilk (SiLK) The feasibility of the integration of bulk dielectric materials, "Proceedings of the International Conference on Interconnect Technology, 2001, pp. 253-254 (2001) Thermosetting phenylfluorene, cyclobutenes, polyarenes, thermosetting perfluoroethanes and monomers. --------- SOD 2.3 International Patent Publication WO 00/31183 Poly (Benji Junjin Forest), Organic Polysand Oxide SOD 2.3-3.0 US Patents 5,776,990; 5,895,263; 6,107,357 and 6,342,454; and the United States Patent Bulletin 2001/0040294 Organic Polysiloxane SOD Not Reported US Patent 6,271,273 Organic and Inorganic Materials SOD 2.0-2.5 US Patent 6,156,812 200406031 Invention Description Continued. .Vss * νζ, ^, *, 〆, organic and Inorganic material SOD 2.0-2.3 US patent 6,171,687 Organic material SOD not reported US patent 6,172,128 Organic SOD 2.12 US patent 6,214,746 Organic sesquioxane CVD, SOD < 3.9 WO 01/29052 Fluorosilicon Hemioxane CVD, SOD < 3.9 WO 01/29141 Unfortunately, the numerous organic SOD systems currently in development with a dielectric constant of 2.0 to 3.5 have certain disadvantages in terms of the aforementioned mechanical and thermal properties; therefore, the industry needs to develop Improved manufacturing methods and performance are available for dielectric films in this range of dielectric constants. In addition, the industry needs materials with low dielectric constant expansibility, in other words materials that can be reduced to even lower dielectric constants such as 2.7 to 2.5 to 2.2 to 2.0 and below.
Reichert及Mathias說明包含金岡U燒分子之化合物及單體, 其係屬於以籠合為主的分子,且教示可用作為鑽石替代 品。[聚合物製備(美國化學會聚合物化學分會)1993年34 (1)期495-6頁;聚合物製備(美國化學會聚合物化學分會) 1992年33 (2)期144-5頁;化學材料,1993年5 (1)期4-5頁;巨分 子,1994 年 27 (24)期 7030-7034 頁;巨分子,1994 年 27 (24)期 7015-7023頁;聚合物製備(美國化學會聚合物化學分會)1995年 36⑴期741-742頁;205屆ACS國家會議,會議計劃,1993年 312頁;巨分子,1994年27 (24)期7024-9頁;巨分子,1992年25 (9)期 2294-306 頁;巨分子,1991 年 24 (18)期 5232-3 頁;Veronica R· Reichert博士論文,1994年55-06B期;ACS研討會系列:高性 能材料之逐步生長聚合物,1996年624期197-207頁;巨分子 ,2000年33 (10)期3855-3859頁;聚合物製備(美國化學會聚合 物化學分會)1999年40 (2)期620-621頁;聚合物製備(美國化 200406031 (5) 發明說明績頁 學會聚合物化學分會)1999年40 (2)期577-78頁;巨分子,1997 年30 (19)期5970-5975頁;聚合物科學期刊,A部分:聚合物 化學,1997年35 (9)期1743-1751頁;聚合物製備(美國化學會 聚合物化學分會)1996年37 (2)期243-244頁;聚合物製備(美 國化學會聚合物化學分會)1996年37 (1)期551-552頁;聚合物 科學期刊,A部分:聚合物化學,1996年34 (3)期397-402頁 :聚合物製備(美國化學會聚合物化學分會)1995年36 (2)期 140-141頁;聚合物製備(美國化學會聚合物化學分會)1992 年33 (2)期146-147頁;應用聚合物科學期刊,1998年68 (3)期 475-482"頁]。Reichert及Mathias所述以金岡J烷為主之化合物及 單體較佳用於形成熱固物質中心帶有金剛烷分子之聚合 物。Reichert及Mathias於其研究中揭示之化合物只包含一種 設計選擇之以金剛烷為主之化合物。結構式A顯示此種對 稱性對位異構物1,3,5,7-肆[4'-(苯基乙炔基)苯基]金剛烷:Reichert and Mathias described compounds and monomers that contain Kanazawa U-bond molecules, which are mainly caged molecules, and the teachings can be used as diamond substitutes. [Polymer Preparation (American Chemical Society Polymer Chemistry Branch) 1993, Issue 34 (1) pages 495-6; Polymer Preparation (American Chemical Society Polymer Chemistry Branch), 1992 33 (2) Issue 144-5; Chemistry Materials, 1993, Issue 5 (1), pages 4-5; Macromolecules, 1994, Issue 27 (24), pages 7030-7034; Macromolecules, 1994, Issue 27 (24), pages 7015-7023; Polymer Preparation (Americanization) Society of Polymer Chemistry, 1995) Issue 741-742, 1995; 205th ACS National Conference, Conference Plan, 1993, 312; Macromolecule, 1994 (24) Issue 7024-9; Macromolecule, 1992 25 (9) Issue 2294-306; Macromolecule, 1991 24 (18) Issue 5232-3; Dr. Veronica R. Reichert Thesis, 55-06B 1994; ACS Seminar Series: Progressive Growth Polymerization of High Performance Materials Materials, 1996, Issue 624, pages 197-207; Macromolecules, 2000, Issue 33 (10), pages 3855-3859; Polymer Preparation (American Chemical Society, Polymer Chemistry Branch), 1999, 40 (2), Issues 620-621; Polymer Preparation (America 200406031 (5) Description of Invention Performance Page Society of Polymer Chemistry) 1999 40 (2) pages 577-78; macromolecules, 1997 30 (19) Issue 5970-5975; Journal of Polymer Science, Part A: Polymer Chemistry, 1997 35 (9) Issue 1743-1751; Polymer Preparation (American Chemical Society Polymer Chemistry Branch) 1996 37 (2) Issue 243 -244 pages; Polymer Preparation (American Chemical Society Polymer Chemistry Branch) 1996 37 (1) Issue 551-552; Polymer Science Journal, Part A: Polymer Chemistry, 1996 34 (3) Issue 397-402 Page: Polymer Preparation (American Chemical Society's Polymer Chemistry Branch), 1995, Issue 36 (2) pages 140-141; Polymer Preparation (American Chemical Society's Polymer Chemistry Branch), 1992, 33 (2) Issue 146-147; Journal of Applied Polymer Science, 1998, 68 (3): 475-482]. Reichert and Mathias' compounds and monomers based on Kanazawa Jane are preferably used to form polymers with adamantane molecules in the center of thermosetting materials. The compounds revealed by Reichert and Mathias in their research included only a design-selected compound based on adamantane. Structural formula A shows such a symmetrical para-isomer 1,3,5,7-[[4 '-(phenylethynyl) phenyl] adamantane:
結構式A 換言之,Reichert及Mathias於其各另1J研究工作以及聯合研 究工作中預期涵蓋一種有用的聚合物其只包含一種目標 以金剛烷為主之單體之異構形式。但當由該以金剛烷為 -12 - 200406031 (6) 發明說日月績頁:Structural formula A In other words, Reichert and Mathias in their other 1J research work and joint research work are expected to cover a useful polymer that contains only an isomeric form of a monomer targeted primarily to adamantane. But when the adamantane is -12-200406031 (6) the invention said that the date and month page:
王 < 單體4單—異構形式(對稱性「全對位」異構物)1,3,5,7-肆[4 -(苯基乙玦基)苯基]金剛烷形成及處理聚合物時出 見重大問題。根據Reichert之博士論文(參見上文)以及巨分 子27期(7 015-7034頁)(參見上文),對稱性全對位異構物 1,3,5,7-肆[4'-(苯基乙炔基)苯基]金剛烷「發現可充分溶解 於氣仿而獲得4 NMR光譜,但獲得溶液13C NMR光譜之時 間並不貫際」’指示全對位異構物之溶解度低。如此 Reichert之對稱性「全對位」異構物1,3,5,7-肆[4、(苯基乙块基) 苯基]金剛烷不溶於標準有機溶劑,因而無法應用於任何 要求'溶解度或以溶劑為主的處理之用途,例如流塗法、 旋塗法或浸塗法。 於發明人之共同讓與且在審查中之專利申請案PCT/US01/22204 ,申請日2001年10月17日(請求發明人之共同讓與且在審Wang < Monomer 4 Mono-isomeric Forms (Symmetric "All-para" Isomers) 1,3,5,7-Di [4-(phenylethylfluorenyl) phenyl] adamantane Formation and Treatment Major problems were encountered with polymers. According to Reichert's doctoral dissertation (see above) and macromolecular issue 27 (p. 7 015-7034) (see above), the symmetrical all-para-isomers 1, 3, 5, 7-- [4 '-( "Phenylethynyl) phenyl] adamantane" is found to be sufficiently soluble in aeroform to obtain a 4 NMR spectrum, but the time to obtain a 13C NMR spectrum of the solution is not consistent "indicates that the solubility of the all para-isomer is low. In this way, Reichert's symmetrical "all para" isomer 1,3,5,7-[[4, (phenylethyl block) phenyl] adamantane is insoluble in standard organic solvents and cannot be used for any requirements. ' Solubility or solvent-based processing applications such as flow coating, spin coating or dip coating. Patent application PCT / US01 / 22204 under joint transfer and in examination by the inventors, with filing date of October 17, 2001
查中之下列申請案權益:美國申請案第09/545058號,申請 曰2000年4月7日;美國申請案第09/618945號’申請曰2000年 7月19日;美國申請案第09/897936號,申請曰2001年7月5曰 :及美國申請案第09/902924號,申請曰2001年7月10曰;以 及國際公告案WO 01/78110,公告日期2001年1〇月18日)’發 明人發現一種組合物,包含一種異構熱固性單體或二元 體混合物,其中該混合物包含至少一種單體或二元體其 具有結構式對應於 R.1The following applications are being investigated: US Application No. 09/545058, application dated April 7, 2000; US Application No. 09/618945, 'application dated July 19, 2000; US Application No. 09 / Application No. 897936, dated July 5, 2001: and US Application No. 09/902924, dated July 10, 2001; and International Publication No. WO 01/78110, dated October 18, 2001) 'The inventor found a composition comprising a mixture of isomerized thermosetting monomers or dimers, wherein the mixture comprises at least one monomer or dimer having a structural formula corresponding to R.1
R· 2 R\ R,4 yZ^//Ul/|hfl R.s R| -13 - 200406031 (7) 發明說明續頁:R · 2 R \ R , 4 yZ ^ // Ul / | hfl R.s R | -13-200406031 (7) Description of the invention continued:
其中Z係選自籠合化合物及矽原子;R、、R'2、RS、R'4、 R'5及R'6分別係選自芳基、分支芳基及伸芳基醚;芳基、 分支芳基及伸芳基醚中之至少一者具有乙炔基;以及R'7 為芳基或經取代之芳基。發明人也揭示形成此等熱固性 混合物之方法。此等新穎異構熱固性單體或二元體混合 物可用於微電子用途作為介電材料,且可溶於多種溶劑 ,例如環己酮。此等期望性質讓此等異構物熱固性單體 或二元體混合物可理想地用以形成厚度約0.1微米至約1.0 微米之薄膜。 發㈣人於本案申請曰之同一天申請第60/384304號專利申 請案,該案請求前述異構物之多孔版本。Where Z is selected from the group consisting of caged compounds and silicon atoms; R, R'2, RS, R'4, R'5, and R'6 are respectively selected from the group consisting of aryl, branched aryl, and arylene ether; aryl At least one of the branched aryl group and the arylene ether has an ethynyl group; and R'7 is an aryl group or a substituted aryl group. The inventors have also disclosed methods for forming such thermosetting mixtures. These novel heterogeneous thermosetting monomers or binary mixtures are useful for microelectronic applications as dielectric materials and are soluble in a variety of solvents, such as cyclohexanone. These desirable properties make these isomer thermosetting monomer or binary mixtures ideal for forming thin films having a thickness of about 0.1 microns to about 1.0 microns. The issuer filed a patent application No. 60/384304 on the same day as the application, which requested a porous version of the aforementioned isomer.
發明人之國際專利公告案WO 01/78110,公告日期2001年10 月18日,於背景部分教示導入奈米尺寸空隙之方法,包 括以物理方式攙混或化學方式接枝熱穩定部分或熱不穩 部分。該公告案之發明為奈米大小空隙可使用金剛烷或 雙金剛烷等籠合結構導入介電材料内部,俾獲得低介電 常數材料,且將低介電常數材料定義為具有介電常數小 於3.0。但該公告案並未報告任何介電常數作為其實施例。 國際專利公告案WO 00/31183於其先前技術乙節教示,雖 然已知多孔熱塑性材料具有可接受之介電常數,但於隨 後之高溫處理過程中孔隙傾向於癟陷,因此國際專利公 告案WO 01/78110公告日期2001年10月18曰教示之技術偏離藉 導入奈米尺寸空隙而增加籠合結構之孔隙度。此外美國 專利 5,776,990 ; 5,895,263 ; 6,107,357 ;及 6,342,454 及美國公告案 -14 - 200406031 (8) #明說明續頁The inventor's international patent publication WO 01/78110, published on October 18, 2001, teaches the introduction of nano-sized voids in the background, including physically mixing or chemically grafting thermally stable parts or thermally Steady part. The invention of the announcement is that nano-sized voids can be introduced into the dielectric material using caged structures such as adamantane or bis-adamantane to obtain a low dielectric constant material, and the low dielectric constant material is defined as having a dielectric constant less than 3.0. However, the announcement did not report any dielectric constant as an example. International Patent Publication WO 00/31183 teaches in Section B of its prior art that although porous thermoplastic materials are known to have acceptable dielectric constants, the pores tend to sag during subsequent high temperature processing. Therefore, International Patent Publication WO 01/78110 Announcement date October 18, 2001 The technical deviation of the teachings increased the porosity of the cage structure by introducing nano-sized voids. In addition, U.S. Patents 5,776,990; 5,895,263; 6,107,357; and 6,342,454 and U.S. Gazette -14-200406031 (8) #Explanation continued
2001/0040294教示雖然於孔隙度低於約20%已經達成2.3-2.4之 介電常數,但未包含孔隙結構之小領域尺寸及/或孔隙結 構之未互連,無法進一步提高孔隙含量。同理美國專利 6,271,273 ; 6,156,812 ; 6,171,687 及 6,172,128 教示熱不穩定單體單元 含量限於低於約30%容積比,若熱不穩定單體用量超過約 30%容積比,則所得介電材料具有柱形或層狀領域,而非 孔隙或空隙,結果導致當移開時結構互連或癟陷,換言 之加熱分解熱不穩定性單體單元時結構互連或癟陷。 雖然業界已知多種方法來降低材料之介電常數,但此 等方i皆有其缺點。因此半導體產業仍然需要a)提供改 良組合物及方法來降低介電層之介電常數;b)提供帶有 改良性質之介電材料如熱穩定性、玻璃轉換溫度(Tg)、模 量及硬度;c)製造熱固性化合物及介電材料,其可被溶 劑媒合且被旋塗至晶圓或層狀材料上;以及d)提供具有 所示擴充性質材料。2001/0040294 teaches that although the dielectric constant of 2.3-2.4 has been reached when the porosity is less than about 20%, the small area size that does not include the pore structure and / or the non-interconnection of the pore structure cannot further increase the pore content. Similarly, U.S. Patents 6,271,273; 6,156,812; 6,171,687 and 6,172,128 teach that the content of thermally unstable monomer units is limited to less than about 30% by volume. If the amount of thermally unstable monomers exceeds about 30 % Volume ratio, the resulting dielectric material has columnar or layered fields, rather than pores or voids, resulting in structural interconnects or depressions when removed, in other words structural interconnects when thermally decomposing thermally unstable monomer units Or framed. Although various methods are known in the industry to reduce the dielectric constant of materials, these methods have their disadvantages. Therefore, the semiconductor industry still needs a) to provide improved compositions and methods to reduce the dielectric constant of the dielectric layer; b) to provide dielectric materials with improved properties such as thermal stability, glass transition temperature (Tg), modulus, and hardness C) making thermosetting compounds and dielectric materials that can be solvent mediated and spin-coated onto wafers or layered materials; and d) providing materials with the extended properties shown.
本發明優異地提供擴充性,因此製造商可將本發明組 合物用於多種不同世代的微晶片。 發明内容 回應於業界的需求且與業界一般想法相反進行研究, 發明人發展出一種組合物包含: (a) 介電材料;以及 (b) 成孔劑,其包含至少兩個稠合芳香環,其中該等稠 合芳香環各自至少有一個燒基取代基於其上,以及一鍵 結存在於毗鄰芳香環上之烷基取代基中之至少二者間。 -15 - 200406031 (9) 發明說明績頁 ' * 、S 、、::、 、 、、 、 ' ^ 發明人也發現一種組合物,其包含具有介電常數小於 2.7之籠合結構。 發明人也發現一種組合物包含:The present invention provides excellent scalability, so manufacturers can use the composition of the present invention for many different generations of microchips. SUMMARY OF THE INVENTION In response to the needs of the industry and conducting research contrary to the general ideas of the industry, the inventors have developed a composition comprising: (a) a dielectric material; and (b) a pore former comprising at least two fused aromatic rings, Wherein each of the fused aromatic rings has at least one substituent substituted thereon, and at least one of the alkyl substituents existing on a neighboring aromatic ring is bonded. -15-200406031 (9) Invention description sheet '*, S, :: ,,,,,,,,,,,,,,,' ^ The inventor also found a composition comprising a cage structure having a dielectric constant of less than 2.7. The inventors have also discovered that a composition comprises:
(a)熱固性成分包含:(1)視需要使用之至少一種式I單體 Q α·(a) The thermosetting component contains: (1) at least one monomer of formula I, if required, Q α ·
以及(2)至少一種式II寡聚物或聚合物And (2) at least one oligomer or polymer of formula II
此處Ε為籠合化合物;各個Q為相同或相異且係選自氫、 芳基、分支芳基及經取代之芳基,其中該等取代基包括 氫、鹵原子、烷基、芳基、經取代之芳基、雜芳基、芳 基醚、烯基、炔基、烷氧基、羥基烷基、羥基芳基、羥 基烯基、羥基炔基、羥基或羧基;Gw為芳基或經取代之 -16- 200406031 (10) 發明說明績頁, 芳基,此處取代基包括函原子及烷基;h為0至10 ; i為0 至10 ; j為0至10 ;及w為0或1 ;以及(b)成孔劑。Here E is a cage compound; each Q is the same or different and is selected from hydrogen, aryl, branched aryl, and substituted aryl, wherein these substituents include hydrogen, halogen atom, alkyl, aryl , Substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy, or carboxyl; Gw is aryl or Substituted -16-200406031 (10) Summary page of the invention, aryl group, where substituents include functional atoms and alkyl groups; h is 0 to 10; i is 0 to 10; j is 0 to 10; and w is 0 or 1; and (b) a porogen.
需了解當上式II或下式IV、VI、VII、VIII或IX之w為0時, 兩個籠合化合物係直接鍵結。各個E至少有一個Q附著於 其上,較佳E不帶有多於一個Q為氫,且更佳E不帶有為 氫之Q。當Q為經取代之芳基時,更佳該芳基為經以烯基 或炔基取代。最佳Q基包括(苯基乙炔基)苯基、貳(苯基 乙決基)本基、秦基乙決基(本基乙块基)本基以及(冬基 乙炔基)苯基苯基部分。較佳G之芳基包括苯基、聯苯基 及聯三苯基。更佳G基為苯基。較佳w為1。 本發明也包括一種使用前述組合物之方法。一種方法 中該等步驟包含:分解成孔劑;以及氣化分解後之成孔 劑,藉此降低介電材料之介電常數。另一方法中,方法 步驟包含分解成孔劑以及氣化分解後之成孔劑,藉此形 成孔隙於介電材料。It should be understood that when w of the above formula II or the following formula IV, VI, VII, VIII or IX is 0, the two caged compounds are directly bonded. Each E has at least one Q attached thereto, preferably E does not carry more than one Q as hydrogen, and more preferably E does not carry Q as hydrogen. When Q is a substituted aryl group, it is more preferred that the aryl group is substituted with an alkenyl group or an alkynyl group. Preferred Q groups include (phenylethynyl) phenyl, hydrazone (phenylethlyl) benzyl, qinylethynyl (benzylethenyl) benzyl, and (winterylethynyl) phenylphenyl section. Preferred aryl groups include phenyl, biphenyl, and tritriphenyl. More preferably, the G group is phenyl. Preferably, w is 1. The invention also includes a method of using the foregoing composition. The steps in one method include: decomposition into a porogen; and gasification and decomposition of the porogen, thereby reducing the dielectric constant of the dielectric material. In another method, the method step includes decomposing into a porogen and pore former after gasification and decomposition, thereby forming pores in the dielectric material.
發明人也發展出一種組合物包含: (a) 具有至少雙官能基之化合物,其中該雙官能基可相 同或相異,以及該第一官能基及第二官能基中之至少一 者係選自含矽基、含氮基、碳鍵結至含氧基、羥基以及 含碳雙鍵鍵結至碳之基團組成的組群;以及 (b) 成孔劑,其包含至少兩個稠合芳香環,其中該等稠 合芳香環各,自至少有一個烷基取代基於其上,以及一鍵 結存在於毗鄰芳香環上之烷基取代基中之至少二者間。 實施方式 -17- 200406031 (11) 發明說明績頁 發明人於本案相同申請曰提出專利申請案10/158548,該 案請求一種熱固性成分與一種鍵結至該熱固性成分之成 孔劑之組合物。 介電材料:The inventors have also developed a composition comprising: (a) a compound having at least a bifunctional group, wherein the bifunctional groups may be the same or different, and at least one of the first functional group and the second functional group is selected A group consisting of a silicon-containing group, a nitrogen-containing group, a carbon bond to an oxygen-containing group, a hydroxyl group, and a carbon-containing double bond to a carbon-containing group; and (b) a pore former comprising at least two fused groups Aromatic rings, where each of the fused aromatic rings is based on at least one alkyl substitution, and at least one of the alkyl substituents present on a neighboring aromatic ring is bonded to one another. Embodiment -17- 200406031 (11) Summary page of the invention The inventor filed a patent application 10/158548 in the same application of the present application, which requested a composition of a thermosetting component and a porogen which is bonded to the thermosetting component. Dielectric materials:
已知無機、有機或有機與無機混成材料等介電材料可 用於後文陳述之成孔劑。例如包括苯基乙決化芳香族單 體或寡聚物;氟化或未經氟化聚(伸芳基醚類)例如共同 讓與之美國專利案 5,986,045 ; 6,124,421 ; 6,291,628 及 6,303,733 教 示;雙苯并環丁烯以及有機矽氧烷類例如共同讓與之審 查中i美國專利申請案10/078,919,申請日2002年2月19日之 教示。Dielectric materials such as inorganic, organic, or mixed organic and inorganic materials are known to be used for the pore-forming agent described later. Examples include phenyl ethylated aromatic monomers or oligomers; fluorinated or unfluorinated poly (arylene ethers) such as commonly assigned U.S. Patent Nos. 5,986,045; 6,124,421; 6,291,628, and 6,303,733 Teaching; Bibenzocyclobutene and organosiloxanes are under review, for example, US patent application 10 / 078,919, teaching dated February 19, 2002.
用於此處「蘢合結構」、「籠合分子」及「籠合化合物」等 詞意圖互換使用,用來表示一種分子,其具有至少八個 原子排列成至少一橋基共價連結環系之兩個或兩個以上 原子。換言之,籠合結構、籠合分子或籠合化合物包含 複數個經由共價鍵結原子形成的環,其中該結構、分子 或化合物界限一個容積,因而位在該容積内部之一點無 法未穿過環而離開該容積。橋基及/或環系可包含一或多 個雜原子,且可含有芳香族基、部分環狀或無環飽和烴 基、或環狀或無環未飽和烴基。進一步預期涵蓋籠合結 構包括富樂玲(flillerenes)、以及至少有一個橋基之冠随。例 如金剛烷或雙金剛烷被視為籠合結構,而莕或芳香族螺 化合物於此種定義範圍内未被視為籠合結構,原因在於 莕或芳香族螺化合物不具有一個或多於一個橋基,因此 -18- 200406031 (12) 發明說明績頁; 非屬前述籠合化合物之說明範圍。籠合化合物較佳為金 剛烷及雙金剛烷,且更佳為金剛烷。 「橋頭碳」一詞用於此處表示任何鍵結至另外三個碳之 籠合結構碳。如此例如金剛燒有四個橋頭竣,而雙金剛 烷有八個橋頭碳。As used herein, the terms "coupled structure", "caged molecule" and "caged compound" are intended to be used interchangeably to indicate a molecule that has at least eight atoms arranged in at least one bridge group covalently linked ring system. Two or more atoms. In other words, a caged structure, a caged molecule, or a caged compound contains a plurality of rings formed by covalently bonded atoms, where the structure, molecule, or compound bounds a volume, so that a point located inside the volume cannot pass through the ring And leave the volume. The bridging group and / or the ring system may contain one or more heteroatoms, and may contain an aromatic group, a partially cyclic or acyclic saturated hydrocarbon group, or a cyclic or acyclic unsaturated hydrocarbon group. It is further anticipated that the covered cage structure will include flillerenes and at least one crown of the bridge. For example, adamantane or bisadamantane is considered a caged structure, and fluorene or aromatic spiro compounds are not considered as a caged structure within this definition, because fluorene or aromatic spiro compounds do not have one or more Bridge base, therefore -18-200406031 (12) Description page of invention; not in the scope of the aforementioned cage compound. The caged compound is preferably adamantane and bisadamantane, and more preferably adamantane. The term "bridgehead carbon" is used here to indicate any caged carbon that is bonded to the other three carbons. So for example, diamond bridges have four bridge heads completed, while diamantane has eight bridge head carbons.
較佳介電材料為於發明人之共同讓與且在審查中之專 利申請案60/347195,申請日2002年1月8日及60/384303,申請 曰同本案以及申請日2003年1月3日及ΓΜ06878(全文以引用 方式併入此處)所揭示及請求專利之熱固性成分。 較彳i本組合物包含⑻至少一種式III金剛烷單體The preferred dielectric material is the patent application 60/347195, which is jointly assigned by the inventors, and is filed on January 8, 2002 and 60/384303. The application date is the same as this application, and the application date is January 3, 2003. The thermosetting composition disclosed and claimed by Japan and ΓΜ06878, which is incorporated herein by reference in its entirety. The present composition comprises at least one adamantane monomer of formula III
以及(b)至少一種式IV金剛烷寡聚物或聚合物And (b) at least one adamantane oligomer or polymer of formula IV
Q QQ Q
.Q.Q
αα
Q αQ α
Q α 或⑻至少一種式V雙金剛烷單體 -19- 200406031 (13)Q α or ⑻ at least one bisadamantane monomer of formula V -19- 200406031 (13)
奋明說朗續頁 ft < S Ν» A、丨 以及(b)至少一種式VI雙金剛烷單體之寡聚物或聚合物Fen Ming said that the continuation sheet ft < S Ν »A, 丨 and (b) at least one oligomer or polymer of bisadamantane monomer of formula VI
其中Q、Gw、h、i、j及w定義如前。 當上式IV之h、i及j皆為零時,金剛烷二元體係如下式 VII所示Where Q, Gw, h, i, j, and w are as defined above. When h, i and j in the above formula IV are all zero, the adamantane binary system is shown in the following formula VII
Q 此處Q及Gw定義如前。當式VII之w為零時,金剛烷二元體 1 了 -20- 200406031 (14) 發明說朗績頁: 範例顯示於下表2。Q Here Q and Gw are defined as before. When w of formula VII is zero, the adamantane binary body is -20-200406031 (14) The invention achievement page: An example is shown in Table 2 below.
200406031200406031
-22 - 200406031 (16) 發明巍明績頁-22-200406031 (16) Outstanding achievement page
ΗΗ
當上式IV中h為1以及i及j為零時,金剛烷三元體顯示如 下式VIIIWhen h is 1 and i and j are zero in the above formula IV, the adamantane triad shows the following formula VIII
Ct a qCt a q
Q 此處Q及Gw定義如前。當式VIII之w較佳為1時,較佳三 元體例如顯示於下表4。 表4Q Here Q and Gw are defined as before. When w of Formula VIII is preferably 1, a preferred triad is shown in Table 4 below, for example. Table 4
200406031 \)/ —I 明L發1 fi200406031 \) / —I Ming L hair 1 fi
ri^nm·ri ^ nm ·
RiiRii
.•.4r 200406031. • .4r 200406031
-25 - 200406031 (19) 套明說明績頁:-25-200406031 (19) Performance sheet:
-26- 200406031 (20) 發明說明續頁、-26- 200406031 (20) Description of the invention continued,
-27 - 200406031 (21) #明說明績頁:-27-200406031 (21) #Indicate performance page:
200406031200406031
-29- 200406031 (23) 參明說日$績頁 、 , <» V-' V "〆、、 ,九 r-29- 200406031 (23) Refer to the report page,, < »V- 'V " 〆 ,,, nine r
RR
較佳本組合物包含至少一種上式VI寡聚物或聚合物,Preferably the present composition comprises at least one oligomer or polymer of formula VI above,
此處Q、G、h、i、j及w定義如前。當上式VI之h、i及j皆為Here Q, G, h, i, j and w are as defined above. When h, i, and j in Equation VI are
零時,雙金剛烷二元體顯示於下式IX - Q QAt zero, the bisadamantane binary is shown in the following formula IX-Q Q
此處Q及Gw定義如前。 較佳熱固性成分⑻包含:(1)式XA金剛烷單體Here Q and Gw are defined as before. A preferred thermosetting component ⑻ includes: (1) adamantane monomer of formula XA
,式XB -30- 200406031 杳明說明績頁丨 (24) Ri, Formula XB -30- 200406031 杳 Ming description page 丨 (24) Ri
,式XCXC
RiRi
或式XDOR XD
RiRi
以及(2)式XI金剛烷寡聚物或聚合物And (2) an adamantane oligomer or polymer of formula XI
-31 - 200406031 (25) 發萌龠明績頁' 以及較佳下式金剛烷寡聚物或聚合物-31-200406031 (25) Emerging 龠 Result Sheet 'and preferred adamantane oligomer or polymer
或(1)至少一種式XIIA雙金剛烷單體 式ΧΠΒOr (1) at least one bisadamantane monomer of formula XIIA
Ri -32- 200406031 (26)Ri -32- 200406031 (26)
,式 XIIC, Type XIIC
RiRi
發明說明續頁、Description of the invention
或式XIIDOr XIID
以及(2)式XIII雙金剛烷寡聚物或聚合物And (2) bisadamantane oligomer or polymer of formula XIII
200406031 (27) 蚕曰月諸:明績頁 、 、、、♦、々·*,、>、, ( V ' 且較佳下式雙金剛烷寡聚物或聚合物200406031 (27) Silkworm month: clear pages, ,,, ♦, 々 · * ,, > ,, (V 'and preferably bisadamantane oligomer or polymer of the following formula
、XI、XIIA、ΧΠΒ、XIIC及XHD之各個Ri為相同或相異,且 係選自氫、函原子、烷基、芳基、經取代之芳基、雜芳 基、芳基醚、烯基、炔基、烷氧基、羥基烷基、羥基芳 基、羥基烯基、羥基炔基、羥基或羧基;以及式XA、XB 、XC、XD、XI、XIIA、XIIB、XIIC 及 XIID 之各個 Y 為相同或相 異且係選自氫、烷基、芳基、經取代之芳基或函原子。 式II、IV、VI、XI及XIII表示隨機或不規則結構,其中h、 i及j單元中之任一者於存在有另一單元之前可重複或可 未重複數次。如此上式II、IV、VI、XI及XIII之各個單元順 序為隨機或不規則。 一具體實施例中,較佳熱固性成分包含上式XA、XB、 XC及XD之金剛烷單體、以及至少一種上式XI金剛烷寡聚 物或聚合物,此處h、i及j中之至少一者至少為1。較佳 -34- 200406031 (28) 奋明說明績頁丨 熱固性成分包含上式XIIA、ΧΠΒ、XIIC或XIID之雙金剛烷單 體、以及至少一個上式XIII之雙金剛烷寡聚物或聚合物, 此處h、i及j中之至少一者至少為1。 較佳熱固性成分包含上式XA、XB、XC或XD之金剛烷單 體、以及下式XIV之金剛烷寡聚物或聚合物,此處&、Y 及w定義如前以及h為0或1。Ri of each of XI, XI, XIIA, XIIB, XIIC, and XHD are the same or different, and are selected from the group consisting of hydrogen, a letter, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl , Alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxy, or carboxyl; and each Y of formula XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, and XIID Are the same or different and are selected from the group consisting of hydrogen, alkyl, aryl, substituted aryl, or halo. Formulae II, IV, VI, XI, and XIII represent random or irregular structures in which any one of units h, i, and j may be repeated or may not be repeated several times before another unit is present. In this way, the order of the units of formulas II, IV, VI, XI, and XIII is random or irregular. In a specific embodiment, the preferred thermosetting composition comprises an adamantane monomer of the above formula XA, XB, XC and XD, and at least one adamantane oligomer or polymer of the above formula XI, where h, i and j are At least one is at least 1. Better-34- 200406031 (28) Fen Ming's performance sheet 丨 Thermosetting composition contains the bisadamantane monomer of the above formula XIIA, XIIB, XIIC or XIID, and at least one bisadamantane oligomer or polymer of the above formula XIII , Where at least one of h, i, and j is at least 1. Preferred thermosetting ingredients include adamantane monomers of the above formula XA, XB, XC or XD, and adamantane oligomers or polymers of the following formula XIV, where &, Y and w are as defined above and h is 0 or 1.
較佳下式金剛烷寡聚物或聚合物Preferred adamantane oligomers or polymers
較佳熱固性成分包含上式XIIA、XIIB、XIIC或XIID之雙金 剛烷單體、以及下式XV之雙金剛烷寡聚物或聚合物,此 處R丨、Y及w定義如前以及h為0或1。 200406031 (29) 發明說明績頁The preferred thermosetting composition comprises a bisadamantane monomer of the above formula XIIA, XIIB, XIIC or XIID, and a bisadamantane oligomer or polymer of the following formula XV, where R 丨, Y and w are as defined above and h is 0 or 1. 200406031 (29) Invention description sheet
較佳該雙金剛烷寡聚物或聚合物具有下式Preferably, the bisadamantane oligomer or polymer has the following formula
h 較佳熱固性成分包含上式XA、XB、XC或XD之金剛烷單 體,以及下式XVI之金剛烷二元體,此處R!、Y及w定義如 (30)200406031h The preferred thermosetting composition includes the adamantane monomer of the above formula XA, XB, XC or XD, and the adamantane binary of the following formula XVI, where R !, Y and w are defined as (30) 200406031
,jj νττΔ ^ ΧΙΐΒ ^ ^ 隹熱固性成分包含上式邡一二元禮,&處私、… 較 烷單體 ,及下式XVII之雙金剛烷, jj νττΔ ^ χΙΐΒ ^ ^ 隹 The thermosetting component contains the above formula 邡 a binary gift, & virgin, ... more alkane monomer, and the bisadamantane of the following formula XVII
200406031 (31) 發明說明績頁: 較佳下式雙金剛烷二元體200406031 (31) Summary sheet of the invention: Bisdamantane binary
更高碳寡聚物。 較佳熱固性成分包含上式XA、XB、XC或XD之金剛烷單 體,以及下式XVIII之金剛烷三元體,此處尺丨、Y及w定義 如前。Higher carbon oligomers. Preferred thermosetting ingredients include adamantane monomers of the above formula XA, XB, XC or XD, and adamantane triplets of the following formula XVIII, where the ruler, Y and w are as defined above.
-38- 200406031 發明說明績頁、 (32)-38- 200406031 invention description sheet, (32)
剛烷單體,及下式XIX之雙金剛烷三元體。The adamantane monomer and the bisadamantane triad of the following formula XIX.
-39- 200406031 (33) 奋明碎明續頁 較佳熱固性成分包含上式XA、XB、XC或XD之金剛烷單 體、上式XVI金剛烷二元體、以及至少一種上式XI金剛烷 寡聚物或聚合物,此處h、i及j中之至少一者至少為1。 較佳熱固性成分包含上式XIIA、XIIB、XIIC或XIID之雙金剛 烷單體、下式XVII之雙金剛烷二元體、以及至少一種上 式XIII雙金剛烷寡聚物或聚合物,此處h、i及j中之至少一 者至少為1。-39- 200406031 (33) Fenming Broken Continued Preferred thermosetting ingredients include adamantane monomer of the above formula XA, XB, XC or XD, adamantane binary of the above formula XVI, and at least one adamantane of the above formula XI An oligomer or polymer, where at least one of h, i, and j is at least one. Preferred thermosetting ingredients include bisadamantane monomers of the above formula XIIA, XIIB, XIIC or XIID, bisadamantane binary bodies of the following formula XVII, and at least one bisadamantane oligomer or polymer of the above formula XIII, At least one of h, i, and j is at least 1.
較佳熱固性成分包含上式XA、XB、XC或XD之金剛烷單 體、上式XVI金剛烷二元體、上式XVIII金剛烷三元體、以 及至少一種上式XI金剛烷寡聚物或聚合物,此處i及j中 之至少一者至少為1。較佳熱固性成分包含上式XIIA、XIIB 、XIIC或XIID之雙金剛烷單體、上式XVIII之雙金岡4烷二元 體、上式XIX雙金剛烷三元體、以及至少一種上式XIII雙 金剛烷寡聚物或聚合物,此處i及j中之至少一者至少為1。Preferred thermosetting components include the adamantane monomer of the above formula XA, XB, XC or XD, the adamantane binary of the above formula XVI, the adamantane triple of the above formula XVIII, and at least one adamantane oligomer of the above formula XI or Polymer, where at least one of i and j is at least 1. Preferred thermosetting ingredients include bisadamantane monomers of the above formula XIIA, XIIB, XIIC or XIID, bisadamantetradane binary bodies of the above formula XVIII, bisadamantane triplets of the above formula, and at least one of the above formula XIII An adamantane oligomer or polymer, where at least one of i and j is at least one.
熱固性成分包含式XA金剛烷單體其為經四取代之金剛 烷、或式XIIA雙金剛烷單體其為經四取代之雙金剛烷。 較佳單體為式XA金剛烷單體。金剛烷主鏈攜帶經取代之 芳基基團於1、3、5及7各個位置。式XI化合物為式XA金 剛烷單體之透過未經取代及/或經取代之芳基單元鍵聯之 寡聚物或聚合物。式XIII化合物為式XII雙金剛烷單體之透 過未經取代及/或經取代之芳基單元鍵聯之寡聚物或聚合 物。通常h、i及j為0至10,較佳0至5及更佳0至2之整數。 如此最簡單之金剛烷寡聚物為上式XVI所示之二元體(式 XI中,h為0、i為0以及j為0 ),其中兩個金剛烷主鏈係透 -40 - 200406031 (34) 杳明說明續頁: 過一個未經取代或經取代之芳基單元鍵聯。如此最簡單 之雙金剛烷寡聚物為上式XVII所示之二元體(式XIII中,h 為0、i為0以及j為0 ),其中兩個雙金剛烷主鏈係透過一個 未經取代或經取代之芳基單元键聯。The thermosetting component comprises a monomer of the formula XA, which is a tetra-substituted adamantane, or a monomer of the formula XIIA, which is a tetra-substituted bis-adamantane. A preferred monomer is an adamantane monomer of formula XA. The adamantane main chain carries substituted aryl groups at positions 1, 3, 5 and 7. Compounds of formula XI are oligomers or polymers of monomers of formula XA adamantane which are linked through unsubstituted and / or substituted aryl units. A compound of formula XIII is an oligomer or polymer of a bisadamantane monomer of formula XII that is linked through unsubstituted and / or substituted aryl units. Usually h, i and j are integers from 0 to 10, preferably from 0 to 5 and more preferably from 0 to 2. The simplest adamantane oligomer is a binary body represented by the above formula XVI (in formula XI, h is 0, i is 0, and j is 0), in which two adamantane main chains are -40-200406031. (34) 杳 明 说明 Continued: Linked via an unsubstituted or substituted aryl unit. The simplest bisadamantane oligomer is a binary body represented by the above formula XVII (in formula XIII, h is 0, i is 0, and j is 0), in which two bisadamantane main chains pass through a Substituted or substituted aryl units are linked.
另一具體實施例中,較佳本熱固性成分包含至少一種 上式XI金剛烷寡聚物或聚合物,此處h為0至10、i為0至10 及j為0至10。較佳本熱固性成分包含至少一個上式XIII雙 金剛烷寡聚物或聚合物,此處h為0至10、i為0至10及j為0 至10。 較佳本熱固性成分包含至少一種上式XI金剛烷寡聚物 或聚合物,此處h為0或1、i為0及j為0。此種金剛烷結構 式係如上式XIV所示。 較佳本熱固性成分包含至少一種上式XIII雙金剛烷寡聚 物或聚合物,此處h為0或1、i為0及j為0。此種雙金剛烷 結構式係如上式XV所示。In another embodiment, it is preferred that the present thermosetting component comprises at least one adamantane oligomer or polymer of the above formula XI, where h is 0 to 10, i is 0 to 10, and j is 0 to 10. Preferably the present thermosetting composition comprises at least one bisadamantane oligomer or polymer of the above formula XIII, where h is 0 to 10, i is 0 to 10 and j is 0 to 10. Preferably, the present thermosetting component comprises at least one adamantane oligomer or polymer of the above formula XI, where h is 0 or 1, i is 0 and j is 0. The structure of this adamantane is shown by the above formula XIV. Preferably, the present thermosetting component comprises at least one bisadamantane oligomer or polymer of the above formula XIII, where h is 0 or 1, i is 0 and j is 0. Such a bisdamantane structural formula is shown by the above formula XV.
較佳本熱固性成分包含至少一種上式XI金剛烷寡聚物 或聚合物,此處h為0、i為0及j為0。此種金剛烷二元體 係如上式XVI所示。 較佳本熱固性成分包含至少一種上式XIII雙金剛烷寡聚 物或聚合物,此處h為0、i為0及j為0。此種雙金剛烷二 元體係如上式XVII所示。 較佳本熱固性成分包含至少一種上式XI金剛烷寡聚物 或聚合物,此處h為1、i為0及j為0。此種金剛烷三元體 係如上式XVIII所示。 -41 - 200406031 (35) 發明說明績頁; 較佳本熱固性成分⑻包含至少一種上式ΧΠΙ雙金剛烷寡 聚物或聚合物,此處h為1、i為0及j為0。此種雙金剛烷 三元體係如上式XIX所示。 較佳熱固性成分包含至少一種上式XI金剛烷寡聚物或 聚合物混合物,此處h為2、i為0以及j為0 (線性寡聚物或 聚合物)以及h為0、i為1及j為0 (分支寡聚物或聚合物)。 如此此種組合物包含下式XX所示金剛烷線性四元體混合 物,此處R!、Y及w定義如前。Preferably, the present thermosetting component comprises at least one adamantane oligomer or polymer of the above formula XI, where h is 0, i is 0, and j is 0. This adamantane binary system is shown by the above formula XVI. Preferably, the present thermosetting component comprises at least one bisadamantane oligomer or polymer of the above formula XIII, where h is 0, i is 0, and j is 0. Such a bisdamantane binary system is represented by the above formula XVII. Preferably, the present thermosetting component comprises at least one adamantane oligomer or polymer of the above formula XI, where h is 1, i is 0, and j is 0. This adamantane ternary system is represented by the above formula XVIII. -41-200406031 (35) Summary sheet of the invention; Preferably, the thermosetting component ⑻ contains at least one bisadamantane oligomer or polymer of the above formula XII, where h is 1, i is 0, and j is 0. Such a bisdamantane ternary system is shown by the above formula XIX. The preferred thermosetting composition comprises at least one adamantane oligomer or polymer mixture of the above formula XI, where h is 2, i is 0 and j is 0 (linear oligomer or polymer) and h is 0 and i is 1 And j is 0 (branched oligomer or polymer). Such a composition thus comprises a mixture of adamantane linear quaternary compounds represented by the following formula XX, where R !, Y and w are as defined above.
以及較佳下式線性金剛烷四元體And the preferred linear adamantane quaternary
-42 - 200406031 (36)-42-200406031 (36)
以及較佳下式分支金剛烷四元體And the preferred branched adamantane tetrad
SUMSUM
較佳熱固性成分包含至少一種上式XIII雙金剛烷寡聚物 或聚合物(此處h為2、i為0以及j為0結果獲得線性寡聚物 或聚合物;以及h為0、i為1及j為0結果獲得分支寡聚物 或聚合物)。如此此種組合物包含下式XXII所示雙金剛烷 線性四元體…,此處Ri、Y及w定義如前 -43 - 200406031 (37) assia.A preferred thermosetting composition comprises at least one bisadamantane oligomer or polymer of the above formula XIII (where h is 2, i is 0, and j is 0. As a result, a linear oligomer or polymer is obtained; and h is 0, i is 1 and j are 0 results to obtain branched oligomers or polymers). Such a composition thus comprises a bisadamantane linear tetrad shown in the following formula XXII ..., where Ri, Y and w are defined as before -43-200406031 (37) assia.
u r\u. • 44- 200406031 (38) 發;明詖明績頁u r \ u. • 44- 200406031 (38) issued
以及較佳下式分支雙金剛烷四元體And the preferred branched bisdamantane tetrad
較佳熱固性成分包含上式XVI金剛烷二元體及上式XVIII 金剛烷三元體。較佳熱固性成分包含上式XVII雙金剛烷Preferred thermosetting components include the adamantane binary of formula XVI and the adamantane triple of formula XVIII. Preferred thermosetting ingredients include bisadamantane of the above formula XVII
-45 - 200406031 (39)-45-200406031 (39)
奋明說明:續I 二元體及上式XIX雙金剛烷三元體。 較佳熱固性成分包含上式XVI金剛烷二元體以及至少一 種上式XI金剛烷寡聚物或聚合物,此處h為0、i至少為1 及j為0。較佳熱固性成分包含上式XVII雙金剛烷二元體以 及至少一種上式XIII雙金剛烷寡聚物或聚合物,此處h為0 、i至少為l、j為0以及w為0或1。 二具體實施例中,對上式I及II而言,較佳Q基包括芳 基以及經以烯基及炔基取代之芳基;更佳Q基包括(苯基 乙块基)苯基、貳(苯基乙炔基)苯基、苯基乙炔基(苯基 乙炔基)苯基、以及(苯基乙炔基)苯基苯基部分。較佳G 之芳基包括苯基、聯苯基及聯三苯基。更佳G基為苯基。 附接至= C型金剛烷或雙金剛烷環之苯基環的經取代 之乙炔基之各別Ri基團於上式XA、XB、XC、XD、XI、XIIA 、XIIB、XIIC、XIID、XIII、XIV、XV、XVI、XVII、XVIII、XIX 、XX、XXI、XXII及XXIII分別為相同或相異。&係選自氫 、鹵原子、烷基、芳基、經取代之芳基、雜芳基、芳基 酸、稀·基、炔基、燒氧基、輕基燒基、經基芳基、經基 烯基、基炔基、經基或致基。各個R!可為無分支或經 分支以及未經取代或經取代,且該等取代基可為無分支 或經分支。較佳燒基、晞基、块基、燒氧基、經基淀基 、羥基烯基及羥基炔基基團含有約2至約10個碳原子,以 及芳基、芳基醚及羥基芳基基團含有約6至約18個碳原子 。若心表示芳基,則Ri較佳為苯基。較佳於苯基之至少 兩個I^C^C基為兩種不同之異構物。至少兩種不同異構物 200406031 (40) 發明說明績頁_Fenming explanation: continued I binary and XIX bisadamantane ternary. A preferred thermosetting composition comprises the adamantane binary of formula XVI and at least one oligomer or polymer of adamantane of formula XI, where h is 0, i is at least 1 and j is 0. A preferred thermosetting composition comprises a bisadamantane binary of the above formula XVII and at least one bisadamantane oligomer or polymer of the above formula XIII, where h is 0, i is at least 1, j is 0, and w is 0 or 1 . In two specific embodiments, for the above formulae I and II, preferred Q groups include aryl groups and aryl groups substituted with alkenyl and alkynyl groups; more preferred Q groups include (phenylethyl) phenyl,贰 (phenylethynyl) phenyl, phenylethynyl (phenylethynyl) phenyl, and (phenylethynyl) phenylphenyl moieties. Preferred aryl groups include phenyl, biphenyl, and tritriphenyl. More preferably, the G group is phenyl. The respective Ri groups of the substituted ethynyl groups attached to the phenyl ring of the = C-adamantane or bis-adamantane ring are in the formula XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII and XXIII are respectively the same or different. & is selected from the group consisting of hydrogen, halogen atom, alkyl, aryl, substituted aryl, heteroaryl, aryl acid, diaryl, alkynyl, alkoxy, light alkynyl, and aryl , Via alkenyl, alkynyl, via or alkynyl. Each R! May be unbranched or branched and unsubstituted or substituted, and the substituents may be unbranched or branched. Preferred alkynyl, fluorenyl, bulk, alkoxy, mesityl, hydroxyalkenyl, and hydroxyalkynyl groups contain about 2 to about 10 carbon atoms, and aryl, aryl ether, and hydroxyaryl groups The group contains about 6 to about 18 carbon atoms. If heart represents aryl, Ri is preferably phenyl. It is preferred that at least two I ^ C ^ C groups of the phenyl group are two different isomers. At least two different isomers 200406031 (40) Summary sheet of the invention_
例如包括間-、對-及鄰-異構物。較佳至少兩種不同異構 物為間-及對-異構物。較佳單體亦即1,3,5,7-肆[374'-苯基乙 炔基]苯基]金剛烷(如圖1D所示)共有五種異構物:(1)對-、對-、對-、對-;(2)對-、對-、對-、間-;(3)對-、對-、間-、間-;⑷對-、間-、間-、間-以及(5)間-、間-、間-、間-。 上式 XA、XB、XC、XD、XI、XIIA、XIIB、XIIC、XIID、XIIIExamples include meta-, para- and ortho-isomers. Preferably at least two different isomers are the meta- and para-isomers. The preferred monomer is 1,3,5,7-^ [374'-phenylethynyl] phenyl] adamantane (as shown in Figure 1D). There are five isomers: -, Right-, right-; (2) right-, right-, right-, between-; (3) right-, right-, between-, between-; ⑷ right-, between-, between-, between- And (5) inter-, inter-, inter-, inter-. XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII
、XIV、XV、XVI、XVII、XVIII、XIX、XX、XXI、XXII 及 XXIII 中苯基環之各個γ分別為相同或相異,且係選自氫、烷 基、芳基、經取代之芳基或鹵原子。當Y為芳基時,芳 基例如包括苯基或聯苯基。Y較佳選自氫、苯基及聯苯 基,更佳為氫。較佳金剛烷或雙金剛烷之兩個橋頭碳間 之至少一個苯基係呈至少兩種不同異構物存在。該至少 兩種不同異構物例如包括間-、對-、及鄰-異構物。較佳 該至少兩種異構物為間-及對-異構物。最佳二元體1,3/4-貳{ Γ,3',5'-參[374〃-(苯基乙炔基)苯基]金剛烷-7'-基}苯(顯示 於圖1F ),生成14種異構物如後。較佳位於金剛燒之兩個 橋頭碳間的苯基係呈間-及對-異構物。對前述兩種異構 物各別而言,存在有七種苯基之RiC = C基異構物如後:(1) 對-、對-、對-、對-、對—、對-;⑺對—、對-、對—、對― 、對-、間-;(3)對-、對-、對-、對-、間-、間-;(4)對-、 對-、對-、間-、間-、間-;(5)對-、對-、間-、間-、間-、間-;(6)對-、間-、間、間-、間-、間-;及⑺間-、間-、間-、間-、間-、間-。 除上式XXI分支金剛烷結構外,須了解當h為0、i為0及j -47 - 200406031 (41) #明3明磺頁: 為1時,上式XI進一步分支為如下式XXIV所示,此處Ri、 Y及w定義如前。須了解由於也可能出現式XXIV結構式之 旁出金剛烷單元之進一步分支,故分支可超出式XXIV結 構式。Each γ of the phenyl ring in XIV, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII, and XXIII is the same or different, and is selected from hydrogen, alkyl, aryl, substituted aromatic Radical or halogen atom. When Y is aryl, aryl includes, for example, phenyl or biphenyl. Y is preferably selected from hydrogen, phenyl and biphenyl, and more preferably hydrogen. Preferably, at least one phenyl group between the two bridgehead carbons of the adamantane or bisadamantane is present as at least two different isomers. The at least two different isomers include, for example, meta-, para-, and ortho- isomers. Preferably, the at least two isomers are meta- and para-isomers. The best binary 1,3 / 4- 贰 {Γ, 3 ', 5'-reference [374〃- (phenylethynyl) phenyl] adamantane-7'-yl} benzene (shown in Figure 1F) , Generate 14 kinds of isomers as follows. It is preferred that the phenyl group located between the two bridgehead carbons of the diamond is meta- and para-isomers. For each of the aforementioned two isomers, there are RiC = C-based isomers of seven phenyl groups as follows: (1) para-, para-, para-, para-, para-, para-; ⑺ right-, right-, right-, right-, right-, between-; (3) right-, right-, right-, right-, between-, between-; (4) right-, right-, right -, Inter-, inter-, inter-; (5) inter-, inter-, inter-, inter-, inter-, inter-; (6) inter-, inter-, inter, inter-, inter-, inter- -; And ⑺ between-, between-, between-, between-, between-, between-. In addition to the branched adamantane structure of the above formula XXI, it must be understood that when h is 0, i is 0, and j -47-200406031 (41) # 明 3 明 素 页: When 1, the above formula XI is further branched into the following formula XXIV As shown here, Ri, Y and w are defined as before. It should be understood that since further branching of the adamantane unit beside the structural formula of formula XXIV may occur, the branch may exceed the structural formula of formula XXIV.
較佳金剛烷結構具有下式The preferred adamantane structure has the formula
-48 - 200406031 (42) 發曰月說商績頁: 除了上式XXIII分支雙金剛烷結構外,須了解當h為0、i 為0及j為1時,上式XIII表示進一步分支為如下式XXV所示 。須了解因式XXV結構式旁出雙金剛烷單元進一步分支 ,故分支可出現超出式XXV。-48-200406031 (42) The monthly performance report page: In addition to the bisadamantane branch of the above formula XXIII, it must be understood that when h is 0, i is 0, and j is 1, the above formula XIII indicates that the further branch is as follows Formula XXV. It must be understood that the diamantane unit is further branched by the structural formula XXV, so the branch may appear to exceed the formula XXV.
較佳雙金剛烷結構具有下式 -49 - 200406031 (43)The preferred bis-adamantane structure has the formula -49-200406031 (43)
奋明說明績頁: 於熱固性成分,單體及寡聚物或聚合物含量係藉後文 「分析試驗方法」乙節陳述之凝膠滲透層析術測定。本組 合物包含金剛烷或雙金剛烷單體,含量為約30至約70面 積%,更佳約40至約60面積%,又更佳約45至約55面積% :寡聚物或聚合物含量為約70至約30面積%,更佳約60至 約40面積%及又更佳約55至約45面積%。最佳本組合物包 含單體(1)含量約50面積%,及寡聚物或聚合物(2)含量約50 面積%。 通常金剛烷或雙金剛烷單體(1)對寡聚物或聚合物(2)之 數量比可以期望方式設定,例如於製備根據本發明之組 -50 - 200406031 (44) 奋明說明績頁 合物期間經由變更起始成分莫耳比,經由調整反應條件 ,以及經由於沉澱/分離步驟期間改變非溶劑對溶劑比。 熱固性成分⑻之較佳製法包含下列步驟。 步驟(A)中,金剛烷或雙金剛烷與式XXVI鹵苯化合物反 應Fenming's performance sheet: The content of thermosetting ingredients, monomers, oligomers or polymers is determined by gel permeation chromatography as described in section "Analytical test methods" below. The composition comprises an adamantane or bisadamantane monomer in an amount of about 30 to about 70 area%, more preferably about 40 to about 60 area%, and still more preferably about 45 to about 55 area%: oligomer or polymer The content is about 70 to about 30 area%, more preferably about 60 to about 40 area% and even more preferably about 55 to about 45 area%. Most preferably, the composition comprises a monomer (1) content of about 50 area% and an oligomer or polymer (2) content of about 50 area%. Usually, the ratio of the amount of the adamantane or bisadamantane monomer (1) to the oligomer or polymer (2) can be set in a desired manner, for example, in preparing the group -50-200406031 (44) according to the invention. By changing the molar ratio of the starting component during the compound, by adjusting the reaction conditions, and by changing the non-solvent to solvent ratio during the precipitation / separation step. A preferred method for preparing the thermosetting component VII includes the following steps. In step (A), adamantane or bisadamantane is reacted with a halobenzene compound of formula XXVI
此處Y係選自氫、烷基、芳基、經取代之芳基或鹵原子 以及Yl為鹵原子, 而形成混合物,使用金剛:!:完時,該混合物包含至少一種 上式III單體以及至少一種上式IV寡聚物或聚合物,此處h 為0至10、i為0至10、j為0至10、w為0或1以及Q為氫或 -QHsYiY,此處Y!及Y定義如前。較佳該至少一種寡聚物或 聚合物具有下式Here Y is selected from the group consisting of hydrogen, alkyl, aryl, substituted aryl or halogen atoms, and Yl is a halogen atom to form a mixture using diamonds:!: When finished, the mixture contains at least one monomer of the above formula III And at least one oligomer or polymer of the above formula IV, where h is 0 to 10, i is 0 to 10, j is 0 to 10, w is 0 or 1, and Q is hydrogen or -QHsYiY, here Y! And Y is defined as before. Preferably the at least one oligomer or polymer has the formula
或當使用雙金剛烷時,該混合物包含至少一種上式V單 -51 - 200406031 (45) #明敌明績頁」 體以及至少一種上式VI寡聚物或聚合物,此處h為0至10 、1為0至10、j為0至10、w為0或1以及Q為氫或-C6H3Y丨Y (此 處Y!及Y定義如前)以及較佳該至少一種寡聚物或聚合物 具有下式Or when bisadamantane is used, the mixture contains at least one of the above formula V-51-200406031 (45) # 明 敌 明 表 页 ”and at least one of the above formula VI oligomer or polymer, where h is 0 to 10, 1 is 0 to 10, j is 0 to 10, w is 0 or 1 and Q is hydrogen or -C6H3Y 丨 Y (here Y! And Y are as defined above) and preferably the at least one oligomer or polymer The following formula
熟諳技藝人士須了解反應可出現於上式X及XVI指示以外 之雙金剛烷的橋頭碳。Those skilled in the art must understand that the reactions can occur at bridgehead carbons of bisdamantane other than those indicated by the above formulas X and XVI.
步驟(B)中,步驟(A)所得混合物與式RiCsCH端末炔反應 。較佳本方法生成上式XA及XI或XIIA及XIII組合物。 步驟(A)中,金剛烷或雙金剛烷與式XXVI鹵苯化合物反 應。除了鹵素基團丫1及前述基團Y之外,鹵苯化合物也 含有其它取代基。 鹵苯化合物較佳係選自溴苯、二溴苯及碘苯。以溴苯 及/或二漠苯為佳,以溴苯為又更佳。 金剛烷或雙金剛烷與鹵苯化合物之反應(步驟(A))較佳 係經由福立列克拉福特反應於路易士酸催化劑存在下進 -52- 200406031 (46) 發明說明績頁, 行。雖然可使用全部習知路易士酸催化劑,但較佳路易 士酸催化劑含有至少一種選自氯化鋁(III) (A1C13)、溴化鋁 (III) (AlBr3)及石典化I呂(III) (A1I3)之化合物。以氯化I呂(III) (A1C13)為 最佳。儘管溴化鋁(III)之路易士酸度較高,但使用上通常 較不佳,原因在於其昇華點低,只有90°C,因而於產業規 模上比例如氯化鋁(III)遠較難以掌控。In step (B), the mixture obtained in step (A) is reacted with terminal alkyne of the formula RiCsCH. Preferably, this method produces a composition of the above formula XA and XI or XIIA and XIII. In step (A), adamantane or bisadamantane is reacted with a halobenzene compound of formula XXVI. In addition to the halogen group y1 and the aforementioned group Y, the halobenzene compound also contains other substituents. The halobenzene compound is preferably selected from bromobenzene, dibromobenzene and iodobenzene. Bromobenzene and / or dibenzyl are preferred, and bromobenzene is even more preferred. The reaction of adamantane or bisadamantane with a halobenzene compound (step (A)) is preferably carried out via a Fleich-Claffford reaction in the presence of a Lewis acid catalyst. -52- 200406031 (46) Summary sheet of the invention, OK. Although all conventional Lewis acid catalysts can be used, it is preferred that the Lewis acid catalyst contains at least one member selected from the group consisting of aluminum (III) chloride (A1C13), aluminum (III) bromide (AlBr3), and Ion (III) ) (A1I3). I (III) chloride (A1C13) is the best. Although aluminum bromide (III) has a higher Lewis acidity, it is generally poorer to use because it has a low sublimation point of only 90 ° C, making it far more difficult on an industrial scale than, for example, aluminum (III) chloride. Take control.
於另一較佳版本,福立列克拉福特反應係於第二催化 劑成分存在下進行。第二催化劑成分較佳含有至少一種 選自含4至20個碳原子之第三級鹵烷、含4至20個碳原子 之第三級烷醇、含4至20個碳原子之第二及第三級婦烴以 及第三級i烷基芳基化合物之化合物。特別,第二催化 劑成分含有至少一種選自2-溴-2-甲基丙烷(第三丁基溴)、 2-氯-2-甲基丙烷(第三丁基氯)、2-甲基-2-丙醇(第三丁醇) 、異丁晞、2-溴丙烷以及第三丁基溴苯之化合物,而以2-溴-2-甲基丙烷(第三丁基溴)為最佳。總而言之,其烷基 含5個或5個以上碳原子之化合物較不適當,固體成分於 反應結束時由反應溶液中沉澱出。 最佳路易士酸催化劑為氯化鋁(III) (A1C13),而第二催化劑 成分為2-溴-2-甲基丙烷(第三丁基溴)或第三丁基溴苯。 進行福立列克拉福特反應之較佳程序為金剛烷或雙金 剛烷、i苯化合物(如溴苯)、及路易士酸催化劑(如氯化 鋁)於30°C至50°C,較佳35°C至45°C,及特別40°C混合與加熱 。於低於30°C溫度,反應未完成,以及例如形成較高比例 之三取代金剛烷。原則上可使用比上列溫度更高溫度(例 -53 - 200406031 (47) 發明說初磺頁f 如60°C ),但如此非期望地導致步驟(A)反應混合物之非鹵 化芳香族材料(例如苯)比例較高。催化劑系統之第二成 分亦即第三丁基溴隨後通常以5至10小時,且較佳6至7小 時添加至前述反應溶液;添加結束後,於前述溫度範圍 混合入反應混合物又經5至10小時且較佳7小時時間。In another preferred version, the Fleich-Clafford reaction is performed in the presence of a second catalyst component. The second catalyst component preferably contains at least one member selected from a third-stage haloalkane having 4 to 20 carbon atoms, a third-stage alkanol having 4 to 20 carbon atoms, a second and 4 to 20 carbon atoms Tertiary women's hydrocarbons and tertiary i alkylaryl compounds. In particular, the second catalyst component contains at least one selected from the group consisting of 2-bromo-2-methylpropane (third butyl bromide), 2-chloro-2-methylpropane (third butyl chloride), and 2-methyl- Compounds of 2-propanol (third butyl alcohol), isobutyl hydrazone, 2-bromopropane, and third butyl bromobenzene, and 2-bromo-2-methylpropane (third butyl bromide) is the best . In general, compounds whose alkyl group has 5 or more carbon atoms are less suitable, and solid components are precipitated from the reaction solution at the end of the reaction. The preferred Lewis acid catalyst is aluminum (III) chloride (A1C13), and the second catalyst component is 2-bromo-2-methylpropane (third butyl bromide) or third butyl bromobenzene. The preferred procedure for carrying out the Friuli-Crafort reaction is adamantane or bisdamantane, i-benzene compounds (such as bromobenzene), and Lewis acid catalysts (such as aluminum chloride) at 30 ° C to 50 ° C, preferably 35 ° C to 45 ° C, and especially 40 ° C for mixing and heating. At temperatures below 30 ° C, the reaction is not complete and, for example, a higher proportion of tri-substituted adamantane is formed. In principle, higher temperatures than those listed above can be used (Example -53-200406031 (47) Inventive beginning sulfonate f such as 60 ° C), but such a non-halogenated aromatic material which undesirably leads to the reaction mixture of step (A) (Eg benzene). The second component of the catalyst system, namely, third butyl bromide, is then usually added to the aforementioned reaction solution for 5 to 10 hours, and preferably 6 to 7 hours; after the addition is completed, the reaction mixture is mixed into the reaction temperature range for 5 to 10 hours and preferably 7 hours.
出乎意外地,除了單體四苯基化化合物例如1,3,5,7-肆 (3'/4'-溴苯基)金剛烷外,其寡聚物或聚合物也出現於步驟 (A)所得混合物。全然出乎意外地,式III金剛烷單體對式 IV金剛烷寡聚物或聚合物之重量比、或式V之雙金剛烷 單體對式VI雙金剛烷寡聚物或聚合物之重量比可透過金 剛烷或雙金剛烷、函苯化合物(如溴苯)及第二催化劑成 分(例如第三丁基溴)用量控制。步驟(A)反應混合物中, 金剛烷或雙金剛烷對卣苯化合物對第二催化劑成分之莫 耳比較佳為 1:(5-15):(2-10),甚至 1:(8-12):(4-8)。Unexpectedly, in addition to monomeric tetraphenylated compounds such as 1,3,5,7- (3 '/ 4'-bromophenyl) adamantane, oligomers or polymers also appeared in the step ( A) The resulting mixture. Unexpectedly, the weight ratio of the adamantane monomer of formula III to the adamantane oligomer or polymer of formula IV, or the weight of the bisadamantane monomer of formula V to the bisdamantane oligomer or polymer of formula VI The ratio can be controlled by the amount of adamantane or bis-adamantane, a benzene compound (such as bromobenzene), and a second catalyst component (such as third butyl bromide). In the reaction mixture of step (A), the molar ratio of the adamantane or bisadamantan p-toluene compound to the second catalyst component is preferably 1: (5-15) :( 2-10), or even 1: (8-12 ) :( 4-8).
式 XA、XB、XC、XD、XI、XIIA、XIIB、XIIC、XIID、XIII、 XIV、XV、XVI、XVII、XVIII、XIX、XX、XXI、XXII、XXIII、 XXIV及XXV化合物中,鹵原子取代基Y,位置未經定義。較 佳混合物包含間-及對-異構物,不似全對-異構物,較佳 可產生改良溶解度及良好薄膜性質。步驟(A)反應混合物 中,除了單體及寡聚物或聚合物外,也可能出現起始成 分及副產物(例如為非全苯基化金剛烷)。 步驟(A)所得混合物視需要地使用熟諳技藝人士已知方 法後敘處理。例如需由混合物去除未反應鹵苯基化合物 (如溴苯),俾獲得產物,產物帶有高比例式III、IV、V及 -54- 200406031 (48) 發明謂:明續頁;In compounds of formula XA, XB, XC, XD, XI, XIIA, XIIB, XIIC, XIID, XIII, XIV, XV, XVI, XVII, XVIII, XIX, XX, XXI, XXII, XXIII, XXIV and XXV, halogen atoms are substituted Base Y, position is undefined. Better mixtures contain meta- and para-isomers, which, unlike full para-isomers, preferably produce improved solubility and good film properties. In the reaction mixture of step (A), in addition to monomers and oligomers or polymers, starting components and by-products (for example, non-perphenylated adamantane) may also occur. If necessary, the mixture obtained in step (A) is post-processed using a method known to those skilled in the art. For example, it is necessary to remove unreacted halophenyl compounds (such as bromobenzene) from the mixture and obtain a product with high proportions of formulas III, IV, V and -54- 200406031 (48) The invention claims: Ming continued;
VI化合物可供進一步反應。任一種可與自苯化合物(如溴 苯)溶混之溶劑或溶劑混合物,其適合用於沉澱式III、IV 、V及VI化合物,皆可用於分離此種產物。較佳例如藉 滴入而將步驟(A)混合物倒入非極性溶劑或溶劑混合物, 較佳使用含7至20個碳原子之脂肪族烴或其混合物,特別 至少一種成分係選自庚烷餾分(沸點93-99°C )、辛烷餾分 (沸點98-110°C )以及烷混合物,市面上以商品名特用苯清 (Spezial Benzin)80-110°C (沸點80-110°C之石油醚)得自漢尼威爾 (Honeywell)國際公司。以特用苯清80-110°C (沸點80-110°C之石 油醚)為最佳。有機混合物對非極性溶劑之重量比較佳為 約1:2至約1:20,更佳約1:5至約1:13及又更佳約1:7至約kll。 另外,極性溶劑或溶劑混合物(如曱醇或乙醇)可用於步 驟(A)所得混合物之後敘處理,但非較佳,因隨後沉澱出 產物混合物呈橡膠狀組合物。 發明人發現若步驟(A)混合物沉澱入某些溶劑,則由前 述步驟(A)所得單體對反應混合物中之其二元體及三元體 及寡聚物之尖峰比有劇烈位移。此種發現讓熟諳技藝人 士可有利地調整處理條件而達成單體對二元體及三元體 及寡聚物之目標比例。較佳為了降低此項比值,使用單 體與寡聚物或聚合物有不同溶解度之溶劑。 較佳可達成此種單體對二元體及三元體比值位移之較 佳溶劑包括特用苯清80-110°C(石油醚,沸點80-110°C)、石油 英(沸點90-110°C )及庚烷(沸點98°C )。更佳溶劑為特用苯清 。特別,為了達成由約3:1單體:二元體+三元體+寡聚物 -55- 200406031 (49) 發明娩明績頁;Compound VI is available for further reactions. Any solvent or solvent mixture miscible with benzene compounds (such as bromobenzene), which is suitable for precipitating compounds of formula III, IV, V and VI, can be used to isolate such products. Preferably, for example, the mixture of step (A) is poured into a non-polar solvent or a solvent mixture by dropping, preferably an aliphatic hydrocarbon having 7 to 20 carbon atoms or a mixture thereof is used, and particularly at least one component is selected from the heptane fraction (Boiling point: 93-99 ° C), octane fraction (boiling point: 98-110 ° C), and alkane mixture. The market name is Spezial Benzin 80-110 ° C (boiling point: 80-110 ° C) (Petroleum ether) was obtained from Honeywell International. Specially used benzene clear 80-110 ° C (petroleum ether with boiling point 80-110 ° C) is the best. The weight of the organic mixture to the non-polar solvent is preferably about 1: 2 to about 1:20, more preferably about 1: 5 to about 1:13, and still more preferably about 1: 7 to about k11. In addition, a polar solvent or a solvent mixture (such as methanol or ethanol) may be used for the subsequent treatment of the mixture obtained in step (A), but it is not preferable because the product mixture is precipitated to form a rubbery composition. The inventors have found that if the mixture of step (A) is precipitated into some solvents, the peak ratio of the monomers obtained from the aforementioned step (A) to the peaks of its binary, ternary and oligomers in the reaction mixture is shifted violently. This discovery allows skilled artisans to advantageously adjust the processing conditions to achieve the target ratio of monomer to binary, ternary and oligomer. In order to reduce this ratio, it is preferable to use a solvent having a different solubility between the monomer and the oligomer or polymer. The preferred solvents that can achieve this type of monomer-to-binary and ternary ratio shift include special benzene 80-110 ° C (petroleum ether, boiling point 80-110 ° C), petroleum spirit (boiling point 90- 110 ° C) and heptane (boiling point 98 ° C). A better solvent is special benzene. In particular, in order to achieve from about 3: 1 monomers: binary + ternary + oligomer -55- 200406031 (49) invention delivery page;
移轉成約1:1,步驟(A)混合物沉澱入特用苯清;或為了達 成由3:1單體:二元體+三元體+寡聚物移轉成約1.7-2.0丄0, 步驟(A)反應混合物係沉澱入石油英及庚烷。發明人了解 沉澱時尖峰分布的實質變化可由沉澱過濾時單體的耗損 說明:於特用苯清損失2/3、以及於石油英及庚烷損失2 1/3 。對應於單體產率損失50%及25-33%。為了讓單體:二元體 +三元體+寡聚物比值3:1維持不變,步驟(A)反應混合物沉 澱入甲醇,此處不再觀察得任何產率耗損。此點可經由 測定濾液之產率耗損以及濾液之GPC分析確認。 類似Ortiz所述合成,根據本發明步驟(A)之較佳版本進 行之福立列克拉福特反應係直接始於金剛虎,其偶合鹵 苯化合物。比較先前之合成方法例如Reichert等人對1,3,5,7-肆(3W-溴苯基)金剛烷之合成方法,本方法特別優異,因 本方法不再需要先製造四溴化金剛烷,而可節省反應步 驟。此外較少生成非期望的苯。Transfer to about 1: 1, and the mixture in step (A) is precipitated into special benzene, or in order to achieve the transfer from 3: 1 monomer: binary + triad + oligomer to about 1.7-2.0 丄 0 In step (A), the reaction mixture is precipitated into petroleum spirit and heptane. The inventors understand that the substantial change in the distribution of the spikes during precipitation can be attributed to the loss of monomers during precipitation filtration. Description: Loss of 2/3 in special benzene clear and 2 1/3 in petroleum benzine and heptane. Corresponding to 50% and 25-33% loss of monomer yield. In order to keep the monomer: binary + triad + oligomer ratio of 3: 1 constant, the reaction mixture in step (A) was precipitated into methanol, and no yield loss was observed here. This can be confirmed by measuring the yield loss of the filtrate and GPC analysis of the filtrate. Similar to the synthesis described by Ortiz, the Fleich-Clafford reaction performed according to a preferred version of step (A) of the present invention starts directly from King Kong Tiger, which is coupled to a halobenzene compound. Compared with previous synthetic methods, such as Reichert et al.'S method for synthesizing 1,3,5,7-bromo (3W-bromophenyl) adamantane, this method is particularly excellent because it does not require the first production of tetrabromoadamantane , Which can save the reaction steps. In addition, less undesirable benzene is formed.
熟諳技藝人士已知上式III、IV、V及VI化合物之鹵原子 基團Yi,除了經由金剛烷與鹵苯基化合物(例如借助於福 立列克拉福特反應)直接反應外,鹵基Yi也可藉多階段式 合成而導入,例如經由金剛燒偶合苯基化合物(亦即不含 鹵基Yi),接著導入基團Yi,例如透過加成(Y〇2 (如Br2)而 導入基團Yi,但此種方式並不佳。 較佳方法之步驟(B)中,步驟(A)後所得(視需要地經過後 敘處理之)混合物與式RiOCH (此處R!定義如前)端末炔反 應。 -56 - 200406031 (50) 發日月綱買: 式R^OCH中,&係同前述式XA、XB、XC、XD及之金 剛烷產物以及式ΧΙΙΑ、ΧΙΙΒ、XIIC、XIID及XIII雙金剛烷產物 之基團R!。如此最佳使用乙炔基苯(苯乙決)作為步驟 反應之端末块。It is known to those skilled in the art that in addition to the halogen atom group Yi of the compounds of the above formula III, IV, V and VI, in addition to the direct reaction of adamantane with a halophenyl compound (for example by means of the Fletcher Craft reaction), the halogen Yi Introduced by multi-stage synthesis, such as via adamantine-coupled phenyl compounds (that is, halogen-free Yi), followed by the group Yi, for example, the group Yi is introduced by addition (Y02 (such as Br2), However, this method is not good. In step (B) of the preferred method, the mixture obtained after step (A) (after treatment as necessary) is reacted with terminal alkyne of the formula RiOCH (where R! Is as defined above). -56-200406031 (50) Sun and moon program: In the formula R ^ OCH, & is the same as the adamantane product of the aforementioned formula XA, XB, XC, XD and the formula XIIA, XIIB, XIIC, XIID and XIII The group R! Of the adamantane product is so optimal to use ethynylbenzene (phenylethylidene) as the terminal block of the step reaction.
步驟(Β)中,為了偶合端末炔至位於金剛烷系的鹵苯基 團,全部適合用於此項目的之習知偶合法可使用’例如 述於Diederich,F.及Stang,PJ.(編輯)「金屬催化交聯反應」’威 力-VCH 1998年;及March,J·「高級有機化學」,第4版,约輸 威力父子公司,1992年717/718頁。 當苯基之Y附接至上式XI或式XIII之兩個蘢合結構橋頭 碳時,Y可與苯乙炔反應而生成端末炔基。In the step (B), in order to couple the terminal alkyne to the halophenyl group located in the adamantane system, all the conventional methods suitable for this project can be used. ) "Metal-Catalyzed Crosslinking Reactions" 'Power-VCH 1998; and March, J. "Advanced Organic Chemistry", 4th ed., About Weili & Sons, 1992, pages 717/718. When Y of a phenyl group is attached to two bridged carbons of the coupled structure of formula XI or XIII above, Y can react with phenylacetylene to form a terminal terminal alkynyl group.
於根據本發明方法之較佳版本,步驟(A)所得(視需要地 經後敘處理之)混合物與端末炔之反應係於所謂的索諾賈 許拉(Sonogashira)偶合反應使用之催化劑系統存在下進行(參 考 Sonogashira ; Tohda ; Hagihara ;四面體函件,1975 年 4467 頁)。 又更佳使用催化劑系統,該系統與各例中含有至少一種 式[ArsPhPdX2 (此處Ar =芳基以及X =鹵素)之免-三芳基膦錯合 物’鹵化銅(例如Cul),驗(例如二燒基胺),三芳基鱗及 助溶劑。根據本發明此種較佳催化劑系統同等良好地係 由所述成分組成。助溶劑較佳含有至少一種選自甲苯、 二甲苯、氯苯、N,N-二甲基甲醯胺及1-甲基4吡哈咬酮(N-甲基吡咯啶酮(NMP))之成分。以含有下列成分武三苯基 膦)二氯化鈀(ιι)(亦即[PhfLPdci2)、三苯基膦(亦即[ph3P])、 碘化銅(I)、三乙基胺及甲苯作為助溶劑之催化劑系統為 〇7- 200406031 (51) 蚕明說兩績頁:In a preferred version of the method according to the present invention, the reaction of the mixture obtained in step (A) (which is optionally post-processed) with terminal alkynes exists in the catalyst system used in the so-called Sonogashira coupling reaction. (Refer to Sonogashira; Tohda; Hagihara; Tetrahedron Letter, p. 4467, 1975). It is even more preferred to use a catalyst system which contains at least one free-triarylphosphine complex 'copper halide (eg, Cul) of formula [ArsPhPdX2 (where Ar = aryl and X = halogen) in each case. Such as dialkyl amine), triaryl scales and solubilizers. Such a preferred catalyst system according to the invention consists equally well of said components. The co-solvent preferably contains at least one selected from the group consisting of toluene, xylene, chlorobenzene, N, N-dimethylformamidine, and 1-methyl 4 pyrachidone (N-methylpyrrolidone (NMP)). ingredient. Contains the following ingredients: triphenylphosphine, palladium dichloride (ιι) (that is, [PhfLPdci2), triphenylphosphine (that is, [ph3P]), copper (I) iodide, triethylamine, and toluene. The co-solvent catalyst system is 07-200406031 (51) Can Ming said two achievements:
最佳。optimal.
由步驟(A)所得混合物(且視需要地經過後敘處理)於端 末炔之較佳反應程序為混合物首先混合鹼(例如三乙基胺) 及助溶劑(例如曱苯),此種混合物於室溫攪拌數分鐘。 然後力口入鈀-三苯基膦錯合物(例如Pd(PPh3)2Cl2)、苯基膦 (PPh3)及鹵化銅(例如碘化銅(I)),混合物於5CTC至90°C (更佳 80°C至85°C )之溫度範圍加熱。然後於所述溫度範圍於1至 20小時(更佳3小時)以内加入端末炔。添加結束後,混合 物於75°C至85°C (更佳80°C )之溫度至少加熱5至20小時(更佳 12小時)。然後添加溶劑至反應溶液,於減壓下蒸餾去除 。較佳於過濾後,反應溶液冷卻至20°C至30°C (更佳25°C )溫 度。最後,步驟(B)反應混合物特別為了去除微量金屬(例 如鈀),該步驟(B)反應混合物使用業界人士習知方法後敘 處理。The preferred reaction procedure for the mixture obtained from step (A) (and optionally post-processed) at the terminal alkyne is that the mixture is first mixed with a base (such as triethylamine) and a co-solvent (such as toluene). Stir for several minutes at room temperature. Then add palladium-triphenylphosphine complex (such as Pd (PPh3) 2Cl2), phenylphosphine (PPh3) and copper halide (such as copper (I) iodide), the mixture is at 5CTC to 90 ° C (more 80 ° C to 85 ° C). The terminal alkyne is then added within said temperature range within 1 to 20 hours (more preferably 3 hours). After the addition is complete, the mixture is heated at a temperature of 75 ° C to 85 ° C (more preferably 80 ° C) for at least 5 to 20 hours (more preferably 12 hours). Then, a solvent was added to the reaction solution, and distilled under reduced pressure. After filtration, the reaction solution is preferably cooled to a temperature of 20 ° C to 30 ° C (more preferably 25 ° C). Finally, the reaction mixture in step (B) is specifically for removing trace metals (such as palladium). The reaction mixture in step (B) is post-processed using methods known to those skilled in the art.
若步驟(B)混合物沉澱入某些溶劑,則反應混合物中如 上步驟(B)所得單體對其二元體及三元體及寡聚物之尖峰 比值移位。 出乎意外地發現直接始於金剛烷之反應順序,結果於 步驟(A)反應產物獲得之寡聚物或聚合物含量,可透過金 剛烷、鹵苯化合物及第二催化劑成分(亦即第三丁基溴) 之使用比例控制。以對應方式,步驟(A)反應混合物之苯 含量也透過此種比值成功地調節,由於苯用於產業規模 合成有毒性,故苯含量之調節相當重要。寡聚物或聚合 物含量允許進行如同單體之相同二次化學(單體例如為 -58 - 200406031 #'明:說明續頁丨 1,3,5,7-肆(374、溴苯基)金岡|J烷,亦即寡聚物或聚合物恰如 同單體可供用於步驟(B)與端末炔反應)。 一具體實施例中,組合熱固性成分與成孔劑。熱固性 成分用量為約50至約90重量%,成孔劑用量為約10至約50 重量%。熱固性成分及成孔劑可共同反應或可未共同反 應。較佳隨後加入黏著促進劑。 較佳於另一具體實施例中,本組合物包含至少兩種不 同式XXVII異構物之混合物If the mixture of step (B) is precipitated into some solvents, the peak ratios of the monomers obtained in step (B) above to its dimers, trimers and oligomers are shifted in the reaction mixture. It is unexpectedly found that the reaction sequence directly starts from adamantane, and the oligomer or polymer content obtained in the reaction product of step (A) can pass through the adamantane, halobenzene compound, and the second catalyst component (that is, the third Butyl bromide). In a corresponding manner, the benzene content of the reaction mixture in step (A) is also successfully adjusted through this ratio. Since benzene is toxic for industrial scale synthesis, the adjustment of the benzene content is very important. The oligomer or polymer content allows the same secondary chemistry as the monomer (monomer is -58-200406031, for example) # 'Ming: description continued 丨 1, 3, 5, 7-, (374, bromophenyl) Jingang | Jane, that is, oligomer or polymer can be used as monomer for step (B) reaction with terminal alkyne). In a specific embodiment, a thermosetting component and a pore-forming agent are combined. The amount of the thermosetting component is about 50 to about 90% by weight, and the amount of the porogen is about 10 to about 50% by weight. The thermosetting component and the pore-forming agent may or may not react together. The adhesion promoter is preferably added subsequently. Preferably in another embodiment, the composition comprises a mixture of at least two different isomers of the formula XXVII
ΗΗ
此處Q定義如前以及包含成孔劑。較佳該混合物包含至 少兩種不同異構物,具有式XXVIIIHere Q is defined as before and includes porogens. Preferably the mixture contains at least two different isomers having formula XXVIII
,式 XXIX, Formula XXIX
或式XXX 200406031Or XXX 200406031
此處各個γ為相同或相異且係選自氫、烷基、芳基、經 取代之芳基或鹵原子;以及各個R!為相同或相異且係選 自氫、自原子、烷基、芳基、經取代之芳基、雜芳基、 芳基醚、烯基、炔基、烷氧基、羥基烷基、羥基芳基、 經基晞基、經基炔基、輕基或幾基。 較佳混合物包含至少兩種不同式XXXI異構物Here each γ is the same or different and is selected from hydrogen, alkyl, aryl, substituted aryl or halogen atom; and each R! Is the same or different and is selected from hydrogen, self atom, alkyl , Aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxy, hydroxyalkyl, hydroxyaryl, fluorenyl, alkynyl, light or several base. Preferred mixtures contain at least two different isomers of the formula XXXI
此處各個Q定義如前。較佳混合物包含至少兩種不同式 XXXII異構物Here each Q is defined as before. Preferred mixtures contain at least two different isomers of the formula XXXII
式 XXXIII -60- 200406031 奋明說明續頁'Formula XXXIII -60- 200406031 Fenming Instructions Continued '
(54) R(54) R
ΗΗ
或式XXXIVOr formula XXXIV
Η 此處Υ及Κ定義如前。 黏著促進劑: 「黏著促進劑」一詞用於此處表示任一種成分其當添加 至熱固性成分時,比較單獨熱固性成分,可改良對基板 的黏著性之成分。 「具有至少雙官能基化合物」一詞用於此處表示任一種 至少具有兩個官能基其可交互作用或反應或生成鍵結如 後之化合物。雙官能基可以無數方式反應包括加成反應 、親和及親電子取代或消除反應、基團反應等。此外其 它反應也包括生f成非共價键如凡得瓦爾鍵、靜電鍵、離 子鍵及氫鍵。 -61 - 200406031 (55) 杳明説明續頁;Υ Here Υ and κ are as defined above. Adhesion accelerator: The term "adhesion accelerator" is used here to mean any component that, when added to a thermosetting component, is a component that improves the adhesion to the substrate when compared to a thermosetting component alone. The term "compound having at least a bifunctional group" is used herein to mean any compound having at least two functional groups which can interact or react or form a bond as follows. Bifunctional groups can react in numerous ways including addition reactions, affinity and electrophilic substitution or elimination reactions, group reactions, and the like. In addition, other reactions include the formation of non-covalent bonds such as Van der Waals bonds, electrostatic bonds, ion bonds, and hydrogen bonds. -61-200406031 (55) 杳 明 说明 Continued;
一具體實施例中,組合黏著促進劑與成孔劑。以一種 包含黏著促進劑、成孔劑及熱固性成分之組合物為基準 ,該黏著促進劑用量為約3至約18重量%,而該成孔劑用 量為約10至約50重量%。黏著促進劑及成孔劑可共同反應 或未共同反應。較佳隨後以約32至約87重量%之數量加入 熱固性成分。In a specific embodiment, an adhesion promoter and a pore-forming agent are combined. Based on a composition comprising an adhesion promoter, a pore-forming agent, and a thermosetting component, the amount of the adhesion promoter is about 3 to about 18% by weight, and the amount of the pore-forming agent is about 10 to about 50% by weight. The adhesion promoter and the pore-forming agent may react together or not. Preferably, the thermosetting ingredient is subsequently added in an amount of about 32 to about 87% by weight.
發明人發現黏著促進劑可有利地改良成孔劑與熱固性 成分間之相容性。雖然不欲受限於理論,發明人相信黏 著促進劑可用作為乳化劑,因而形成均質系統。 黏著促進劑係揭示於發明人之共同讓與之審查中之專 利申請案60/350187,申請日2002年1月15日以及10/160773,申 請曰2002年5月30日,全文以引用方式併入此處。The inventors have found that adhesion promoters can advantageously improve the compatibility between pore formers and thermosetting ingredients. Although not intending to be bound by theory, the inventors believe that adhesion promoters can be used as emulsifiers, thus forming a homogeneous system. Adhesion promoters are disclosed in the patent applications 60/350187, which were jointly reviewed by the inventors, with application dates of January 15, 2002 and 10/160773, and applications dated May 30, 2002. Go here.
黏著促進劑中,較佳第一官能基及第二官能基中之至 少一者係選自含矽基、含氮基、碳鍵結至含氧基、羥基 及碳雙鍵鍵結至含碳基。較佳含矽基係選自Si-H、Si-Ο及 Si-N ;含氮基係選自例如C-NH2或其它第二及第三級胺類、 亞胺類、醯胺類及醯亞胺類。碳键結至含氧基係選自 =CO、羰基(如酮類及醛類)、酯類、-COOH、含1至5個碳原 子之烷氧基、醚類、縮水甘油醚類及環氧基;羥基為酚 以及碳雙鍵結至含碳基係選自丙烯基及乙烯基。用於半 導體應用,更佳官能基包括含矽基;碳鍵結至含氧基;_ 羥基;及乙烯基。 較佳帶有含矽基之黏著促進劑例如為式XXXVI : 矽烷,其中R2、R3、R4及115各自獨立表示氫 -62- 200406031 (56) 發明說明磷頁:In the adhesion promoter, it is preferred that at least one of the first functional group and the second functional group is selected from a silicon-containing group, a nitrogen-containing group, a carbon bond to an oxygen-containing group, a hydroxyl group, and a carbon double bond to a carbon-containing group. base. Preferably, the silicon-containing group is selected from Si-H, Si-O, and Si-N; the nitrogen-containing group is selected from, for example, C-NH2 or other secondary and tertiary amines, imines, amidines, and amidines. Imines. The carbon-bonded to oxygen-containing system is selected from the group consisting of = CO, carbonyl (such as ketones and aldehydes), esters, -COOH, alkoxy groups containing 1 to 5 carbon atoms, ethers, glycidyl ethers, and rings Oxygen; hydroxy is phenol and carbon is double-bonded to a carbon-containing group selected from propenyl and vinyl. For semiconductor applications, preferred functional groups include silicon-containing groups; carbon bonds to oxygen-containing groups; hydroxyl groups; and vinyl groups. A preferred adhesion promoter with a silicon-based group is, for example, the formula XXXVI: Silane, where R2, R3, R4, and 115 each independently represent hydrogen -62- 200406031 (56) Phosphorus page:
、羥基、未飽和或飽和烷基、經取代或未經取代燒基(此 處取代基為胺基或環氧基)、飽和或未飽和環氧基、未飽 和或飽和羧酸基或芳基;R2、R3、R4及R5中之至少二者表 示氮、經基、飽和或未飽和燒氧基、未飽和燒*基或未飽 和複酸基;以及k+l+m+n^4。範例包括乙晞基石夕燒如H20 CHSi(CH3)2H 及 H2OCHSi(R6)3,此處 為 CH3〇、C2H5〇、Ac〇、H2C= CH或H2C=C(CH3)〇-或乙烯基苯基甲基矽烷;式H2C=CHCHr Si(〇C2H5)3及H2C=CHCHrSi(H)(〇CH3)2丙烯基矽烷;縮水甘油氧 基丙基石夕燒例如(3-縮水甘油氧基丙基)曱基二甲氧基石夕燒 以及(3-縮水甘油氧基丙基)三甲氧基矽烷;式h2C= (CH3)COO(CH2)3-Si(〇R7)3甲基丙烯醯氧基丙基石夕燒,此處r7為 ί元基’較佳為甲基或乙基,胺基丙基碎燒衍生物包括, Hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkyl (here the substituent is amine or epoxy), saturated or unsaturated epoxy, unsaturated or saturated carboxylic acid or aryl ; At least two of R2, R3, R4, and R5 represent nitrogen, a hydroxyl group, a saturated or unsaturated alkoxy group, an unsaturated thiol group or an unsaturated double acid group; and k + l + m + n ^ 4. Examples include acetofluorite such as H20 CHSi (CH3) 2H and H2OCHSi (R6) 3, here CH3〇, C2H50, Ac〇, H2C = CH or H2C = C (CH3) 〇- or vinylphenyl Methylsilane; formula H2C = CHCHr Si (〇C2H5) 3 and H2C = CHCHrSi (H) (〇CH3) 2 acrylsilane; glycidyloxypropyl sulphate such as (3-glycidoxypropyl) Dimethoxysilane and (3-glycidyloxypropyl) trimethoxysilane; formula h2C = (CH3) COO (CH2) 3-Si (〇R7) 3 methacryloxypropyl stone Burning, here r7 is 元 'is preferably methyl or ethyl, aminopropyl crushed derivatives include
H2N(CH2)3Si(OCH2CH3)3、H2N(CH2)3Si(〇% 或 H2N(CH2)3〇Q 。前述矽烷於市面上可得自吉樂(Gdest)公司。H2N (CH2) 3Si (OCH2CH3) 3, H2N (CH2) 3Si (0% or H2N (CH2) 3Q. The aforementioned silanes are commercially available from Gdest).
較佳帶有碳鍵結至含氧基之黏著促進劑例如為縮合甘 油醚類,包括但非限於1,U-參·(羥苯基)乙烷三-縮水甘油 醚,市面上得自翠奎斯特(丁riQuest)公司。 較佳帶有碳鍵結至含氧基之黏著促進劑例如為含有至 少一個羧酸基之未飽和羧酸酯。例如包括三官能基甲基 丙婦酸酯、三官能基丙埽酸酯、三丙烯酸三羥甲基丙酯 、五丙缔酸二異戊四醇酯及甲基丙烯酸縮水甘油酯。貧 述於市面上皆可得自薩特曼(Sart0mer)公司。 帶有乙烯基之較佳黏著促進劑例如為乙烯基環狀吡啶 寡聚物或聚合物,其中該環狀基為吡啶芳香族或雜芳香 -63 - 200406031 (57) 族。有用範例包括但非限於2-乙晞基吡啶及4-乙烯基吡啶 市面上得自萊利(Reilly)公司、乙晞基芳香族化合物以及乙 締基雜芳香族化合物包括但非限於乙烯基p查4、乙烯基 卡巴峻、乙晞基咪咬及乙晞基今咬。 較佳帶有含矽基之黏著促進劑例如為聚甲醯矽烷,揭 示於共同讓與且共同審查中之美國專利申請案第09/471299 號,申請日1999年12月23日,全文以引用方式併入此處。 聚甲醯矽烷具有式XXXVII :Preferred adhesion promoters with a carbon bond to an oxygen-containing group are, for example, condensed glyceryl ethers, including but not limited to 1, U-shen ((hydroxyphenyl) ethane tri-glycidyl ether), commercially available from Cui Quest (Ding Quest). Preferred adhesion promoters having a carbon bond to an oxygen-containing group are, for example, unsaturated carboxylic acid esters containing at least one carboxylic acid group. Examples include trifunctional methylpropionate, trifunctional propionate, trimethylolpropyl triacrylate, diisopentaerythritol pentaacrylate, and glycidyl methacrylate. Poverty is available on the market from Sartomer. A preferred adhesion promoter with a vinyl group is, for example, a vinyl cyclic pyridine oligomer or polymer, wherein the cyclic group is a pyridine aromatic or heteroaromatic -63-200406031 (57) group. Useful examples include, but are not limited to, 2-ethyridylpyridine and 4-vinylpyridine are commercially available from Reilly, ethynyl aromatic compounds, and vinyl heteroaromatic compounds, including but not limited to vinyl p Check 4. Vinyl Carba Jun, Ethyl Base Bites and Ethyl Base Bites. A preferred adhesion promoter with a silicon-based group is, for example, polymethanesilane, disclosed in commonly assigned and co-examined US Patent Application No. 09/471299, filed on December 23, 1999, the entire text of which is incorporated by reference Ways are incorporated here. Polymethylsilane has the formula XXXVII:
Si-R8--- 一 p - Rio £J:...... ol R11 a c 51 ^14 )—R13 ΗSi-R8 --- a p-Rio £ J: ... ol R11 a c 51 ^ 14) —R13 Η
RlSRlS
Si —R17Si —R17
II
Rl6 其中r8、r14及r17各自獨立表示經取代或未經取代之伸烷 基、環伸烷基、伸乙烯基、伸丙晞基或伸芳基;R9、R10 、Rn、R12、R15及R16各自獨立表示氫原子或有機基包含烷 基、伸烷基、乙烯基、環烷基、丙烯基或芳基,且可為 線性或分支;R13表示有機矽、矽烷基、矽氧基或有機基 ;以及p、q、r及s滿足條件[4邻+q+r+s<100,000]以及q及r及s可 共同或獨立為零。有機基含有至多18個碳原子,但通常 含有約1至約10個碳原子。有用烷基包括-CH2-及-(CH2)t-, 此處t〉1。 較佳本發明之聚甲醯矽烷類包括二氫陰離子聚甲醯矽 烷類,其中r8為經取代或未經取代之伸烷基或苯基,r9 為氫原子,聚甲醯矽烷鏈並無旁出基團;換言之q、r及s -64- 200406031 (58) 發萌説自月績頁; 、'、s t;s ; S ^ , ί、'、'、一、 ,*i /ν - ^ ’ 、 4'*~m 皆為零。另一組較佳聚甲醯矽烷類為其中式XXXVII之R9、 R1()、Rn、R12、R15及R16基為含2至10個碳原子之經取代或未 經取代烯基。婦基可為乙稀基、丙歸基、歸丙基、丁婦 基或任何其它至多含10個碳原子之未飽和有機主鏈基團 。烯基本質上為二稀基,且包括未飽和晞基旁出於或取 代於烷基或未飽和有機聚合物主鏈。此等較佳聚甲醯矽 烷例如包括二氫陰離子或婦基取代之聚甲醯矽烷如聚二 氫陰離子甲醯矽烷、聚丙晞基氫陰離子甲醯矽烷以及聚 二氫陰離子甲醯矽烷與聚丙烯基氫陰離子甲酿矽烷之隨 機共聚物。 更佳聚甲醯矽烷類中,式XXXVII之r9基為氫原子以及r8 為亞甲基,旁出基團q、r及s為零。其它較佳本發明之聚 甲醯矽烷化合物為式XXXVII聚甲醯矽烷,其中R9及R15為 氫,R8及R17為亞甲基以及R16為晞基以及旁出基團q及r為 零。聚甲醯矽烷可由先前技術已知方法製備或由聚甲醯 矽烷組合物製造商提供。最佳聚甲醯矽烷類中,式XXXVII R9基為氫原子;Rg為-CH2- ; q、r及s為零及p為5至25。最佳 聚甲醯矽烷可得自星火(Starfire)系統公司。最佳聚甲醯矽 烷之特例如後: 聚甲醯矽烷 - 重量平均 分子量(Mw) 多分散性 尖峰分子量(Mp) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3 (含10%丙烯基) 10,000-14,000 10.4-16 1160 4 (含75%丙烯基) 2,400 3.7 410 如式XXXVII可知,本發明使用之聚甲醯矽烷於r> 0時含 有呈矽氧基形式之氧化基團。如此當r〉0時,R13表示有機 -65 - 200406031 (59) 發明k明績頁:R16, where r8, r14, and r17 each independently represent a substituted or unsubstituted alkylene, cycloalkylene, vinylidene, propylene, or aryl group; R9, R10, Rn, R12, R15, and R16 Each independently represents a hydrogen atom or an organic group containing an alkyl group, an alkylene group, a vinyl group, a cycloalkyl group, a propenyl group, or an aryl group, and may be linear or branched; R13 represents a silicone, a silyl group, a siloxy group, or an organic group And p, q, r, and s satisfy the condition [4 neighbors + q + r + s <100,000] and q and r and s may be zero together or independently. Organic groups contain up to 18 carbon atoms, but usually contain about 1 to about 10 carbon atoms. Useful alkyl groups include -CH2- and-(CH2) t-, where t> 1. Preferred polymethysilanes of the present invention include dihydroanion polymethysilanes, in which r8 is a substituted or unsubstituted alkylene or phenyl group, r9 is a hydrogen atom, and the polymethysilane chain has no side. Group; in other words q, r and s -64- 200406031 (58) sprouting said from the monthly page;, ', st; s; S ^, ί,', ', one,, * i / ν-^ ', 4' * ~ m are all zero. Another group of preferred polymethysilanes are those in which the R9, R1 (), Rn, R12, R15, and R16 groups of formula XXXVII are substituted or unsubstituted alkenyl groups containing 2 to 10 carbon atoms. Alkyl may be ethylene, allyl, propyl, butyl, or any other unsaturated organic backbone group containing up to 10 carbon atoms. The olefin is basically a dilute group, and includes an unsaturated fluorenyl group derived from or substituted by an alkyl group or an unsaturated organic polymer main chain. These preferred polymethysilanes include, for example, dihydroanions or polymethylsilyls substituted by polyhydroxides, such as polydihydroanions, methylsilyls, polypropylene hydrides, and methyldisilanes, and polypropylene. A random copolymer of methyl anion methylsilyl. In the more preferred polymethysilanes, the r9 group of the formula XXXVII is a hydrogen atom and r8 is a methylene group, and the bypass groups q, r, and s are zero. Other preferred polymethylsilyl compounds of the present invention are polymethylsilyl silanes of the formula XXXVII, in which R9 and R15 are hydrogen, R8 and R17 are methylene and R16 is fluorenyl and the by-passing groups q and r are zero. Polymethanesilane can be prepared by methods known in the prior art or provided by the manufacturer of the polymethanesilane composition. Among the best polymethysilanes, the R9 group of formula XXXVII is a hydrogen atom; Rg is -CH2-; q, r and s are zero and p is 5 to 25. The best polymethysilane is available from Starfire Systems. Specific examples of the best polymethylsilane: Polymethylsilane-weight average molecular weight (Mw) polydispersity peak molecular weight (Mp) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3 (with 10% propylene Group) 10,000-14,000 10.4-16 1160 4 (containing 75% propenyl group) 2,400 3.7 410 As can be known from formula XXXVII, the polymethylsilyl silane used in the present invention contains an oxidizing group in the form of a siloxy group at r > 0. So when r> 0, R13 means organic -65-200406031 (59) Invention page:
矽、矽烷基、矽氧基或有機基。須了解聚甲醯矽烷之氧 化版本(r> 0)可極為有效地且有利地用於本發明。同樣顯 然易知,與p、q及s獨立無關,r可為零,唯一條件為式 XXXVII聚甲醯矽烷之基團p、q、r及s須滿足條件 [4<p+q+r+s < 100,000],以及q及r可共同或獨立為零。Silicon, silyl, siloxy or organic. It is to be understood that the oxidized version (r > 0) of polymethanesilane can be used very effectively and advantageously in the present invention. It is also obviously easy to know that, independently of p, q, and s, r may be zero. The only condition is that the groups p, q, r, and s of the polymethylsilazane of the formula XXXVII must meet the conditions [4 < p + q + r + s < 100,000], and q and r may be zero together or independently.
聚甲醯矽烷可由目前有多個製造商可於市面上獲得或 使用習知聚合法可獲得之起始物料製造。至於聚甲醯矽 烷之合成例,起始物料可由常見有機矽烷化合物或聚矽 烷作為起始物料製造,其製法為聚矽烷與聚硼矽氧烷混 合物於惰性氣氛加熱而製造對應聚合物;或經由聚矽烷 與低分子量甲酿梦燒混合物於惰性氣氛加熱因而製造對 應聚合物;或經由聚矽烷與低分子量甲醯矽烷混合物於 惰性氣氛以及於催化劑如聚硼二苯基矽氧烷存在下加熱 ,因而製造對應聚合物。聚甲醯矽烷也可藉美國專利 5,153,295報告之Grignard反應合成,該案以引用方式併入此處。Polymethanesilane can be made from starting materials currently available from a number of manufacturers or using conventional polymerization methods. As for the synthesis examples of polymethysilane, the starting materials can be made from common organic silane compounds or polysilane as starting materials. The preparation method is to heat the mixture of polysilane and polyborosiloxane in an inert atmosphere to produce the corresponding polymer; or Polysilane and low molecular weight methylmercury mixture are heated in an inert atmosphere to produce the corresponding polymer; or via a mixture of polysilane and low molecular weight methylsilyl silane in an inert atmosphere and heated in the presence of a catalyst such as polyborodiphenylsiloxane, Accordingly, a corresponding polymer was produced. Polymethanesilane can also be synthesized by the Grignard reaction reported in U.S. Patent 5,153,295, which is incorporated herein by reference.
較佳帶有羥基之黏著促進劑例如為式XXXVIII : -[R18C6H2(〇H)(R19)]U-之酚-甲醛樹脂或寡聚物,此處R18為經取 代或未經取代之伸烷基、環伸烷基、乙婦基、丙晞基或 芳基;R19為烷基、伸烷基、伸乙晞基、伸環烷基、伸丙 烯基或芳基;以及u = 3-100。有用之烷基包括-CH2-及d-(CH2)v-,此處v> 1。特別有用之酚-甲醛樹脂寡聚物具有分子量 1500,市面上可得自史耐特迪(Schenectady)國際公司。 本黏著促進劑較佳係以小量添加,有效量占本熱固性 組合物重量為約0.5%至至多20%,而以高達約5.0%重量比 -66- 200406031 (60) 發明說明績頁 組合物之數量通常為更佳。 經由組合黏著促進劑與熱固性成分,以及 熱源或高能源,所得組合物於整個聚合物有 性,因此對塗層之任何接觸面確保良好親和 促進劑也可改良條紋控制性、黏度以及薄膜 測檢查可證實條紋控制程度改良。 本組合物也包含其它成分,例如額外黏著 泡劑、清潔劑、阻燃劑、顏料、增塑劑、安 活性劑。 成孔劑: 「孔隙」一詞用於此處包括材料中之空隙及 何其它表示材料中被氣體所佔有的空間。適 相同純質氣體及其混合物。空氣主要為氮氣 物,空氣常見分布於孔隙内,但預期也涵蓋 氮氣、氦氣、氬氣、二氧化碳或一氧化碳。 球形,但另外或此外可包括管形、層狀、盤 它形狀之S隙、或前述各種形狀的組合,且 封閉。「成孔劑」一詞用於此處表示一種可分 該材料為輻射、熱、化學或水份可分解、降 或以其它方式分解,成孔劑包括固體、液體 。分解後之成孔劑可被去除、或可氣化、或 分交聯或完全交聯基體而於隨後完全硬化的 隙,如此降低基體介電常數,且包括犧牲聚 界材料如二氧化碳可用以去除成孔劑以及分 組合物接受 優異黏著特 力。本黏著 均勻度。目 促進劑、消 定劑及界面 細胞以及任 當氣體包括 與氧氣混合 純質氣體如 孔隙典型為 狀、具有其 可為開放或 解的材料, 解、解聚合 或氣體材料 擴散通過部 基體形成孔 合物。超臨 解後的成孔 200406031 (61) 發明說明續頁 劑斷片。較佳用於可熱分解成孔劑,成孔劑包含一種材 料其具有分解溫度係低於與其組合之介電材料之玻璃轉 換溫度(Tg),而高於與其組合之介電材料之硬化溫度。如 此該介電材料與成孔劑為不同材料。較佳本成孔劑具有 降解或分解溫度約350°C或以上。較佳降解後或分解後成 孔劑係於下述溫度氣化,該氣化溫度係高於成孔劑與其 組合之材料硬化溫度,而係低於材料Tg。較佳降解後或 分解後成孔劑係於約280°C或以上之溫度氣化。 雖然國際專利公告案WO 00/31183教示可添加成孔劑至可 熱固化苯并環丁晞、聚伸芳基或可熱固全氟乙晞單體, 俾提高其孔隙度,因而降低樹脂之介電常數,但參考文 獻教示已知與第一基體系統發揮良好功能之成孔劑不一 定與另一種基體系統可發揮良好功能。 可用於本發明之成孔劑包含至少兩個稠合芳香環,其 中該等稠合芳香環各自至少有一個烷基取代基於其上, 以及一鍵結存在於毗鄰芳香環上之烷基取代基中之至少 二者間。較佳該成孔劑包括未經官能化之聚苊均聚物、 經官能化之聚苊均聚物、後述聚苊共聚物、聚(2-乙晞基 萘)及乙烯基蒽及其攙合物。其它有用之成孔劑包括金剛 烷、雙金剛燒、冨樂玲(flillerene)及聚原冰片烯。此等成孔 劑各自可彼此攙混或與其它成孔劑材料如聚己内酯、聚苯 乙烯及聚酯攙混。有用之攙合物包括未經官能化之聚苊均 聚物及聚己内酯。更佳成孔劑為未經官能化之聚苊均聚 物、官能化之聚苊均聚物、聚苊共聚物及聚原冰片晞。 200406031 (62) 發明說明績頁: 有用之聚苊均聚物具有重量平均分子量較佳於約300至 約20,000之範圍;更佳約300至約10,000 ;及最佳約1000至約 7000之範圍,且可使用不同引發劑而由苊聚合製備,該 等引發劑例如2,2'-偶氮貳異丁腈(AffiN);偶氮二羧酸二第 三丁酯;偶氮二羧酸二異丙酯;偶氮二羧酸二乙酯;偶 氮二羧酸二芊酯;偶氮二羧酸二苯酯;1,Γ -偶氮貳(環己 烷甲腈);過氧化苯甲醯(ΒΡΟ);過氧化第三丁基以及三氟 化硼醚酸二乙酯。聚茏均聚物具有官能端基,例如雙鍵 或參鍵鍵結至鏈末端;或使用雙鍵或參键醇(如丙埽醇、 丙炔醇、丁炔醇、丁烯醇或羥基乙基甲基丙晞酸酯)淬熄 陽離子性聚合反應。 歐洲專利公告案315453教示氧化矽及某些金屬氧化物可 與碳反應而生成揮發性次氧化物以及氣態一氧化碳俾形 成孔隙;以及教示碳源包括適當有機聚合物(包括聚茏) 。但該參考文獻並未教示或提示聚苊為可用非金屬材料 或用於降低基體之介電常數的成孔劑。 有用之聚苊共聚物可為線性聚合物、星狀聚合物或高 度分支聚合物。共聚單體可有龐大支鏈基,該支鏈基將 獲得類似聚苊均聚物之共聚物組態;或有非龐大支鏈基 ,該非龐大支鏈基所得共聚物組態將非類似聚苊均聚物 之共聚物組態。具有龐大支鏈基之共聚單體包括異戊酸 乙烯酯、丙烯酸第三丁酯、苯乙烯、α -甲基苯乙烯、第 三丁基苯乙烯、2-乙烯基莕、5-乙烯基-2-原冰片烯、乙烯 基環己烷、乙烯基環戊烷、9-乙烯基蒽、4-乙烯基聯苯、 -69- 200406031 (63) 發明說明績頁: 四苯基丁二烯、二苯乙烯、第三丁基二苯乙烯以及茚; 且較佳為異戊酸乙烯酯。混成聚甲醯矽烷可用作為與茏 以及前述共聚單體中之至少一者之額外共聚單體或共聚 單體成分。有用之混成聚甲醯矽烷例如含10%或75%丙埽 基。帶有非龐大支鏈基之共聚單體包括乙酸乙婦酯、丙 晞酸甲酯、甲基丙烯酸甲酯、及乙烯基醚且較佳為乙酸 乙烯酯。 較佳共聚單體用量係占共聚物之約5至約50莫耳%之範 圍。此等共聚物可使用引發劑藉自由基聚合反應製造。 有用之引發劑較佳包括2,2'-偶氮貳異丁腈(AIBN);偶氮二 羧酸二第三丁酯;偶氮二羧酸二異丙酯;偶氮二羧酸二 乙酯;偶氮二羧酸二芊酯;偶氮二羧酸二苯酯;1,Γ-偶 氮貳(環己烷甲腈);過氧化苯甲醯(ΒΡΟ);以及過氧化第 三丁基且更佳為ΑΙΒΝ。共聚物可使用引發劑(如三氟化硼 醚酸二乙酯)藉陽離子性聚合反應製備。較佳共聚物具有 分子量約500至約15,000。 苊共聚物及共聚單體之熱性質陳述於下表5。表5中, ΒΑ表示丙烯酸丁酯;VP表示異戊酸乙稀酯;VA表示乙酸 乙烯酸;ΑΙΒΝ表示2,2'-偶氮貳異丁腈;BF3表示三氟化硼 醚酸二乙酯;DBADC表示偶氮二羧酸二第三丁酯;W1表 示由室溫至250°C之重量耗損百分比;W2表示於250°C經歷 10分鐘時間之重量耗損百分比;W3表示由250°C至400°C之 重量耗損百分比;W4表示於400°C經歷1小時時間之重量 耗損百分比以及W5表示總重量耗損。 200406031 (64) 潑1明說明績頁 < < < < < < < < < > CO > CD > CO > CO > 共聚單體 3 5 - 二 5 00 <1 Os LT\ LO K) 共聚物 AIBN AIBN BF3 BF3 ί _ . .. .. ! BF3 BF3 BF3 I BF3 1 AIBN 1 AIBN AIBN AIBN AIBN AIBN BF3 AIBN AIBN AIBN AIBN 引發劑 Κ) K) C-Λ S 一。 U) to 5; LT\ LO 共聚單 體°/〇 N3 ΙΟ Lk) 一 Lk) 一 U) 一 一 j— H—^ μ—fc U) 一 引發劑 % 二甲苯 l· -9 二甲苯 l· 二甲苯 二甲苯 1 l· 二甲苯 l· l· !二甲苯 l· -€ ! THF l l· l· 二甲苯 l· 二甲苯 二甲苯 1___ 溶劑 Lrt LT\ Ln g 溫度 CC) to to ro K) K) \>〇 K) to to to to to to to to to to 時間 (小時) 15.45 16.93 0.28 0.23 ί— U) 0.17 2.26 0.84 1 14.12 6.34 ί 14.7 1 4.15 5.32 16.22 11.93 10.01 13.41 14.63 1.631 1.346 0.01 ! 0.04 1 0.03 ο 0.06 o 0.32 0.26 0.69 0.37 0.66 0.41 0.58 2.96 s; 0.98 S W2 31.28 38.42 40.23 36.46 35.28 36.99 47.44 55.51 29.01 33.69 33.27 I 24.98 卜 6.55 37.8 40.06 46.92 36.48 37.92 33.14 31.64 21.43 38.98 42.17 41.08 41.17 28.93 39.38 ! 37.86 39.38 1 39.54 1 47.4 29.59 34.72 29.33 26.51 27.55 35.55 30.44 W4 80.00 78.13 79.50 78.90 77.72 78.33 78.69 95.73 81.31 76.67 88.20 76.90 1 82.12 ! 89.15 81.90 86.40 1 79.04 75.92 79.23 3109 3404 2270 2659 2108 2381 1786 2078 4037 4612 5342 2657 1598 5442 1502 3504 4638 4343 4797 3 6141 7193 3376 3692 3267 3549 2821 3229 6405 | 7782 9303 1 8621 2422 10007 2421 5489 7826 8103 10552 Mw 200406031 (65) 發明說明績頁 已知之成孔劑例如線性聚合物、星狀聚合物、交聯聚 合物奈米球體、嵌段共聚物及高度分支聚合物等皆可用 於前述式I或II新穎熱固性成分。適當線性聚合物為聚醚 類例如聚(環氧乙烷)及聚(環氧丙烷);聚丙烯酸酯類例 如聚(甲基丙烯酸甲酯);脂肪族聚碳酸酯類例如聚(碳酸 伸丙酯)以及聚(碳酸伸乙酯);聚酯類、聚颯類、聚苯乙 烯(包括選自卣化苯乙烯以及經羥基取代之苯乙婦之單體 單元);聚(α-甲基苯乙晞);聚丙交酯類;及其它以乙烯 基為主之聚合物。有用之聚酯成孔劑包括聚己内酯;聚 對苯二甲酸伸乙酯;聚(氧基己二醯氧基-1,4-伸苯基);聚 (氧基對苯二甲醯氧基-1,4-伸苯基);聚(氧基己二醯氧基-1,6-六亞甲基);聚碳酸酯如聚(碳酸六亞甲酯)二醇具有分 子量約500至約2500 ;以及聚醚如聚(雙酚Α-共聚合-表氯醇) 具有分子量約300至約6500。適當交聯不溶性奈米球體(製 備成奈米乳液)適合包含聚苯乙烯或聚(甲基丙烯酸曱酯) 。適當嵌段共聚物為聚(苯乙烯-共聚物-α-甲基苯乙晞)、 聚(苯乙烯-環氧乙烷)、聚(醚内酯類)、聚(酯碳酸酯類) 、及聚(内酯丙交酯)。適當高度分支聚合物為高度分支 聚酯如高度分支聚(己内酯)以及聚醚類例如聚環氧乙烷 以及聚環氧丙烷。另一種有用之成孔劑為乙二醇-聚(己 内酯)。有用之聚合物段包括聚乙烯基吡啶類、氫化聚乙 烯基芳香族類、聚丙烯腈類、聚矽氧烷類、聚己内醯胺 類、聚胺基甲酸酯類、聚二烯類(例如聚丁二烯類及聚異 戊間二烯類)、聚氯乙烯類、聚縮醛類、以及以胺基為端 200406031 (66) 發明說明績頁 基之環氧烷類。其它有用之熱塑性材料包括聚異戊間二 烯類、聚四氫吱喃類及聚乙基今峻林類。 孔隙之產生:Preferred adhesion promoters with hydroxyl groups are, for example, phenol-formaldehyde resins or oligomers of the formula XXXVIII:-[R18C6H2 (〇H) (R19)] U-, where R18 is a substituted or unsubstituted alkylene Group, cycloalkylene, ethynyl, propionyl, or aryl; R19 is alkyl, alkylidene, ethylidene, cycloalkylene, propenyl, or aryl; and u = 3-100 . Useful alkyl groups include -CH2- and d- (CH2) v-, where v > 1. Particularly useful phenol-formaldehyde resin oligomers have a molecular weight of 1500 and are commercially available from Schenectady International. The adhesion promoter is preferably added in a small amount, and an effective amount is about 0.5% to at most 20% by weight of the thermosetting composition, and at a weight ratio of up to about 5.0% -66- 200406031 (60) The number is usually better. By combining an adhesion promoter with a thermosetting component, and a heat source or high energy source, the resulting composition has properties throughout the polymer. Therefore, ensuring good affinity for any contact surface of the coating can also improve stripe control, viscosity, and film inspection. It was confirmed that the degree of streak control was improved. The composition also contains other ingredients such as additional adhesion foams, cleaners, flame retardants, pigments, plasticizers, and activators. Pore-forming agent: The term "pores" is used here to include voids in the material and any other indication of the space in the material occupied by the gas. Suitable for the same pure gas and its mixture. Air is predominantly nitrogen. Air is commonly distributed in the pores, but it is expected to cover nitrogen, helium, argon, carbon dioxide, or carbon monoxide. Spherical, but in addition or in addition may include a tube shape, a layered shape, an S-shaped gap of a disk shape, or a combination of the foregoing shapes, and is closed. The term "pore-forming agent" is used herein to denote a material that can be decomposed, decomposed, or otherwise decomposed by radiation, heat, chemical or moisture. Pore-forming agents include solids and liquids. The decomposed pore-forming agent can be removed, or can be gasified, or cross-linked or completely cross-linked matrix, and then the gap is completely hardened, so that the dielectric constant of the matrix is reduced, and sacrificial polymeric materials such as carbon dioxide can be used to remove Pore formers and grouping compounds receive excellent adhesion. The adhesion evenness. Mesh accelerators, inhibitors, interfacial cells, and any gas include pure gases mixed with oxygen, such as pores that are typically shaped, have materials that can be open or solvable, and decompose, depolymerize, or diffuse gas materials through the substrate to form pores组合。 The compound. Pore formation after super dissolution 200406031 (61) Description of the invention Continued Preferably used for thermally decomposable porogens, the porogen contains a material having a decomposition temperature lower than the glass transition temperature (Tg) of the dielectric material with which it is combined and higher than the hardening temperature of the dielectric material with which it is combined . The dielectric material and the porogen are thus different materials. Preferably, the pore former has a degradation or decomposition temperature of about 350 ° C or above. It is preferred that the porogen after vaporization or decomposition be vaporized at a temperature which is higher than the hardening temperature of the material with which the porogen is combined, and lower than the material Tg. It is preferred that the pore former after degradation or after decomposition is gasified at a temperature of about 280 ° C or above. Although International Patent Publication WO 00/31183 teaches that a pore former can be added to a heat-curable benzocyclobutadiene, a polyarylidene, or a thermosetting perfluoroacetamidine monomer, rhenium increases its porosity, thereby reducing the resin's Dielectric constant, but references teach that pore formers known to function well with a first matrix system may not function well with another matrix system. Pore formers useful in the present invention include at least two fused aromatic rings, wherein each of the fused aromatic rings has at least one alkyl substituent based thereon, and an alkyl substituent group bonded to an adjacent aromatic ring At least between the two. Preferably, the pore-forming agent includes an unfunctionalized polyfluorene homopolymer, a functionalized polyfluorene homopolymer, a polyfluorene copolymer described later, poly (2-ethylfluorenylnaphthalene), and vinyl anthracene and its fluorene组合。 The compound. Other useful pore formers include adamantane, bisdamantine, flillerene, and polyorbornene. Each of these pore formers may be blended with each other or with other pore former materials such as polycaprolactone, polystyrene and polyester. Useful adducts include unfunctionalized polyfluorene homopolymers and polycaprolactones. More preferred pore-forming agents are unfunctionalized polyfluorene homopolymers, functionalized polyfluorene homopolymers, polyfluorene copolymers, and polyorborneol. 200406031 (62) Description sheet of the invention: Useful polyfluorene homopolymers have a weight average molecular weight preferably in the range of about 300 to about 20,000; more preferably about 300 to about 10,000; and most preferably in the range of about 1,000 to about 7,000, It can also be prepared from fluorene polymerization using different initiators, such as 2,2'-azo hydrazone isobutyronitrile (AffiN); azodicarboxylic acid di-third butyl ester; azodicarboxylic acid diiso Propyl ester; Diethyl azodicarboxylate; Dimethyl azodicarboxylate; Diphenyl azodicarboxylate; 1, Γ-Azofluorene (cyclohexanecarbonitrile); Benzoyl peroxide (BPO); third butyl peroxide and diethyl boron trifluoride etherate. Polyfluorene homopolymers have functional end groups, such as double or reference bonds to the end of the chain; or use double or reference alcohols such as propanol, propynol, butynol, butenol, or hydroxyethyl Methylpropionate) quenches cationic polymerization. European Patent Publication No. 315453 teaches that silicon oxide and certain metal oxides can react with carbon to form volatile suboxides and gaseous carbon monoxide to form pores; and teaches that carbon sources include suitable organic polymers (including polyfluorene). However, this reference does not teach or suggest that polyfluorene is a useful non-metallic material or a porogen for reducing the dielectric constant of the substrate. Useful polyfluorene copolymers can be linear polymers, star polymers or highly branched polymers. The comonomer may have a large branched chain group, and the branched chain group will obtain a copolymer configuration similar to a polyfluorene homopolymer; or there may be a non-large branched chain group, the copolymer configuration obtained by the non-large branched chain group will be a non-similar polymer组态 Copolymer configuration of homopolymer. Comonomers with large branching groups include vinyl isovalerate, third butyl acrylate, styrene, α-methylstyrene, third butylstyrene, 2-vinylfluorene, 5-vinyl- 2-orbornene, vinylcyclohexane, vinylcyclopentane, 9-vinylanthracene, 4-vinylbiphenyl, -69- 200406031 (63) Description sheet of the invention: tetraphenylbutadiene, Stilbene, tert-butylstilbene, and indene; and preferably vinyl isovalerate. The blended polymethanesilane can be used as an additional comonomer or comonomer component with at least one of rhenium and the aforementioned comonomer. Useful blends include polymethylsilyl for example containing 10% or 75% propionyl. Comonomers with non-massive branching groups include ethyl acetate, methyl propionate, methyl methacrylate, and vinyl ether, and vinyl acetate is preferred. A preferred amount of comonomer is in the range of about 5 to about 50 mole% of the copolymer. These copolymers can be made by radical polymerization using initiators. Useful initiators preferably include 2,2'-azobisisobutyronitrile (AIBN); di-third butyl azodicarboxylate; diisopropyl azodicarboxylate; diethyl azodicarboxylate Esters; difluorenyl azodicarboxylate; diphenyl azodicarboxylate; 1, Γ-azohydrazone (cyclohexanecarbonitrile); benzamidine peroxide (BPO); and tert-butyl peroxide And more preferably AIBN. Copolymers can be prepared by cationic polymerization using initiators such as boron trifluoride diethyl etherate. Preferred copolymers have a molecular weight of about 500 to about 15,000. The thermal properties of fluorene copolymers and comonomers are set out in Table 5 below. In Table 5, Β means butyl acrylate; VP means ethylene isovalerate; VA means vinyl acetate; AIBN means 2,2'-azobisisobutyronitrile; BF3 means diethyl boron trifluoride etherate ; DBADC means di-tert-butyl azodicarboxylic acid; W1 means weight loss percentage from room temperature to 250 ° C; W2 means weight loss percentage after 250 minutes at 250 ° C; W3 means from 250 ° C to The weight loss percentage at 400 ° C; W4 represents the weight loss percentage at 400 ° C after 1 hour and W5 represents the total weight loss. 200406031 (64) P1 description page < < < < < < < < > CO > CD > CO > CO > Co-monomer 3 5-2 5 00 < 1 Os LT \ LO K) Copolymer AIBN AIBN BF3 BF3 ί _.....! BF3 BF3 BF3 I BF3 1 AIBN 1 AIBN AIBN AIBN AIBN AIBN BF3 AIBN AIBN AIBN AIBN Initiator K) C- Λ S one. U) to 5; LT \ LO comonomer ° / 〇N3 ΙΟ Lk)-Lk)-U)-j-H-^ μ-fc U)-initiator% xylene l · -9 xylene l · Xylene xylene 1 l · xylene l · l ·! Xylene l ·-€! THF ll · l · xylene l · xylene xylene 1___ solvent Lrt LT \ Ln g temperature CC) to to ro K) K ) \ > 〇K) to to to to to to to to time (hours) 15.45 16.93 0.28 0.23 ί— U) 0.17 2.26 0.84 1 14.12 6.34 ί 14.7 1 4.15 5.32 16.22 11.93 10.01 13.41 14.63 1.631 1.346 0.01! 0.04 1 0.03 ο 0.06 o 0.32 0.26 0.69 0.37 0.66 0.41 0.58 2.96 s; 0.98 S W2 31.28 38.42 40.23 36.46 35.28 36.99 47.44 55.51 29.01 33.69 33.27 I 24.98 Bu 6.55 37.8 40.06 46.92 36.48 37.92 33.14 31.64 21.38 38.08 41.08 41.08 38.08 41.08 41.38 38.08 41.08 41.08 38.08 41.08 38.08 41.64 38.08 41.64 41.38 38.08 41.64 41.64 38.38 41.64 41.64 38.38 41.64 41.64 38.38 41.64 41.64 41.64 38.38 41.64 41.64 41.38 38.42 38.42 0.03 1 39.54 1 47.4 29.59 34.72 29.33 26.51 27.55 35.55 30.44 W4 80.00 78.13 79.50 78.90 77.72 78.33 78.69 95.73 81.31 76.67 88.20 76.90 1 82.12! 89.15 81.90 86.40 1 79.04 75.92 79.23 3109 3404 2270 2270 2 1786 2078 4037 4612 5342 2657 1598 5442 1502 3504 4638 4343 4797 3 6141 7193 3376 3692 3267 3549 2821 3229 6405 | 7782 9303 1 8621 2422 10007 2421 5489 7826 8103 10552 Mw 200406031 (65) Examples of known pore formers Linear polymers, star polymers, crosslinked polymer nanospheres, block copolymers, and highly branched polymers can be used for the novel thermosetting ingredients of formula I or II. Suitable linear polymers are polyethers such as poly (ethylene oxide) and poly (propylene oxide); polyacrylates such as poly (methyl methacrylate); aliphatic polycarbonates such as poly (propylene carbonate) Esters) and poly (ethylene carbonate); polyesters, polyfluorenes, polystyrene (including monomer units selected from halogenated styrene and hydroxyethyl substituted acetophenone); poly (α-methyl Phenylacetate); Polylactide; and other polymers based on vinyl. Useful polyester pore formers include polycaprolactone; poly (ethylene terephthalate); poly (oxyhexamethyleneoxy-1,4-phenylene); poly (oxyterephthalate) Oxy-1,4-phenylene); poly (oxyhexamethyleneoxy-1,6-hexamethylene); polycarbonates such as poly (hexamethylene carbonate) glycols having a molecular weight of about 500 To about 2500; and polyethers such as poly (bisphenol A-copolymer-epichlorohydrin) having a molecular weight of about 300 to about 6,500. Properly crosslinked insoluble nanospheres (prepared as nanoemulsions) are suitable to contain polystyrene or poly (methyl methacrylate). Suitable block copolymers are poly (styrene-copolymer-α-methylphenethylhydrazone), poly (styrene-ethylene oxide), poly (ether lactones), poly (ester carbonates), And poly (lactone lactide). Suitable highly branched polymers are highly branched polyesters such as highly branched poly (caprolactone) and polyethers such as polyethylene oxide and polypropylene oxide. Another useful pore former is ethylene glycol-poly (caprolactone). Useful polymer segments include polyvinylpyridines, hydrogenated polyvinylaromatics, polyacrylonitrile, polysiloxanes, polycaprolactams, polyurethanes, polydienes ( For example, polybutadienes and polyisoprenes), polyvinyl chlorides, polyacetals, and alkylene oxides based on amine groups. 200406031 (66) Invention description. Other useful thermoplastic materials include polyisoprenes, polytetrahydrocranes, and polyethylammoniums. The generation of pores:
「降解」一詞用於此處表示共價鍵的斷裂。此種共價鍵 的斷裂可以多種方式發生,包括非同質分解斷裂以及同 質分解斷裂。共價鍵的斷裂無需完全,亦即並非全部可 斷裂的鍵皆須裂解。此外,鍵結的斷裂可能於某些鍵結 比其它鍵結更快。例如酯鍵通常比醯胺键不穩定,因此 以較快速率裂解。键結的斷裂依據降解部分化學組成而 定,也可能導致釋放出彼此不同的斷片。The term "degradation" is used herein to indicate the breaking of covalent bonds. Such covalent bond breaks can occur in a variety of ways, including non-homogeneous breaks and homogeneous breaks. The covalent bond does not need to be completely broken, that is, not all cleavable bonds need to be broken. In addition, bonds may break faster than others. For example, the ester bond is generally less stable than the amidine bond, and therefore is cleaved at a faster rate. The breaking of the bond depends on the chemical composition of the degraded part, and may also result in the release of different fragments.
孔隙產生過程中,用於熱可裂解之成孔劑,施加熱能 至含成孔劑材料,俾將成孔劑實質降解或分解成為其起 始成分或單體。用於此處「實質降解」表示至少80重量% 成孔劑降解或分解。用於上式I及II較佳熱固性成分,Tg 為約400°C至約450°C,故具有降解或分解溫度約350°C或以 上之成孔劑特別可用於本熱固性成分。用於較佳以聚苊 為主之均聚物或共聚物成孔劑,發明人發現經由使用熱 解吸附質譜術等分析技術,可將成孔劑降解、分解或解 聚合成為其苊單體及共聚單體之起始成分。 也可施加熱能而由熱固性成分基體中氣化去除實質已 經降解或分解之成孔劑。較佳該熱能係用於分解及氣化 步驟。隨著已經氣化且經過降解之成孔劑數量而增加, 結果所得熱固性成分之孔隙度也增高。用於前述較佳式I 及II熱固性成分,Tg為約400°C至約450°C,故本實質降解之 -73 - 200406031 (67) 奁曰月說明績頁:In the process of pore generation, the pore-forming agent used for thermal cracking applies thermal energy to the material containing the pore-forming agent, and the pore-forming agent is substantially degraded or decomposed into its original component or monomer. As used herein, "substantially degrading" means that at least 80% by weight of the pore former is degraded or decomposed. The preferred thermosetting ingredients for formulae I and II above have a Tg of about 400 ° C to about 450 ° C, so pore formers with a degradation or decomposition temperature of about 350 ° C or above are particularly useful for this thermosetting ingredient. For homopolymer or copolymer porogens, which are preferably polyfluorene-based, the inventors have discovered that by using analytical techniques such as thermal desorption mass spectrometry, the porogen can be degraded, decomposed, or depolymerized into its fluorene monomer. And comonomer starting ingredients. Thermal energy can also be applied to remove pore formers that have been substantially degraded or decomposed by gasification from the matrix of the thermosetting composition. Preferably, the thermal energy is used in the decomposition and gasification steps. As the amount of pore-forming agent that has been vaporized and degraded increases, the porosity of the resulting thermosetting component also increases. Used for the aforementioned thermosetting ingredients of the preferred formulas I and II, Tg is about 400 ° C to about 450 ° C, so the substantial degradation of this -73-200406031 (67)
成孔劑其具有氣化溫度約280°C或以上,特別適合用於該 種熱固性成分。 較佳用於交聯熱固性成分之硬化溫度也可實質降解成 孔劑,且由熱固性基體中氣化去除成孔劑。典型硬化溫 度及條件將說明於如下「用途」乙節。Pore formers have a gasification temperature of about 280 ° C or above and are particularly suitable for this type of thermosetting composition. The hardening temperature, which is preferably used for cross-linking thermosetting components, can also be substantially degraded into a porogen, and the porogen is removed by gasification in a thermosetting matrix. Typical hardening temperatures and conditions will be described in the “Uses” section below.
形成的孔隙可均勾或隨機分散遍布基體。較佳孔隙均 勻分散遍布基體。 另外,可使用其它至少可部分去除成孔劑而未對熱固 性成分造成不良影響之程序或條件。較佳實質上去除成 孔劑。典型去除方法包括但非限於暴露於輻射,輻射例 如但非限於電磁輻射如紫外光、X光、雷射或紅外光輻 射;機械能如超音波或物理塵力;或粒子輕射例如γ射線 、α粒子、中子束或電子束。 用途: 「層」一詞用於此處表示薄膜及塗層。The pores formed can be uniformly or randomly dispersed throughout the matrix. Preferably, the pores are uniformly dispersed throughout the matrix. In addition, other procedures or conditions can be used that at least partially remove the pore-forming agent without adversely affecting the thermosetting composition. It is preferred to substantially remove the porogen. Typical removal methods include, but are not limited to, exposure to radiation, such as, but not limited to, electromagnetic radiation such as ultraviolet, X-ray, laser, or infrared radiation; mechanical energy such as ultrasound or physical dust; or light emission of particles such as gamma rays, Alpha particles, neutron beams or electron beams. Purpose: The term "layer" is used here to mean films and coatings.
「低介電常數聚合物」一詞用於此處表示具有介電常數 約3.0或以下之有機、有機金屬或無機聚合物。低介電常 數材料典型係製造呈厚度為100至25,000埃之薄層形式,但 也可呈厚膜、塊狀體、圓柱體、球體等形式使用。 熱固性成分、黏著促進劑及成孔劑組成之本組合物可 用於降低材料之介電常數。較佳介電材料具有介電常數k 小於或等於約3.0且更佳約1.9至3.0。介電材料具有玻璃轉 換溫度較佳至少約350°C。 熱固性成分、黏著促進劑及成孔劑組成之本組合物層 -74- 200406031 發明說明續頁、 、旋塗、流 佳本組合物 劑包括任何 ,其可於預 如環狀酮類 酸胺類如Ν-原子;以及 機溶劑也可 進劑的溶解 度即可。多 解。其它適 、二丁基醚 酯、2-庚酮 丙二醇甲基 三甲苯、二 型層厚度為 層,該層厚 單一積體電 料。積體電 多層金屬導 間、或導體 (68) 可藉溶液技術製造,例如噴塗、輥塗、浸塗 塗或澆鑄;以旋塗法用於微電子為較佳。較 係溶解於溶劑。用於本組合物溶液之適當溶 適當純質或混合有機、有機金屬或無機分子 定溫度氣化。適當溶劑包括質子惰性溶劑例 如環戊酮、環己酮、環庚酮及環辛酮;環狀 烷基吡咯啶酮,其中該烷基含有約1至4個碳 N-環己基吡咯啶酮及其混合物。多種其它有 用於此處,只要該等有機溶劑可輔助黏著促 ,且同時有效控制所得溶液作為塗覆液的黏 種辅助措施例如攪拌及/或加熱可用於輔助溶 當溶劑包括甲基乙基甲酮、甲基異丁基甲酮 、環狀二甲基聚矽氧烷類、丁内酯、γ - 丁内 、3-乙氧基丙酸乙酯、聚乙二醇[二]甲基醚、 醚乙酸醋(PGMEA)以及茴香醚;以及烴溶劑如 甲苯類、苯及曱苯。較佳溶劑為環己酮。典 0.1至約15微米。作為微電子裝置之介電中間 度通常係小於2微米。 本組合物可用於電氣裝置,特別用作為與 路(「1C」)晶片關聯之互連裝置的層間介電材 路晶片典型於表面上有複數本組合物層以及 體層。也包括本組合物區介於各別金屬導體 區於積體電路之同一層或同一高度。 本聚合物應用於1C時,組合物溶液係使用習知濕塗覆 200406031 (69) 發明說明績頁丨The term "low dielectric constant polymer" is used herein to mean an organic, organometallic, or inorganic polymer having a dielectric constant of about 3.0 or less. Low dielectric constant materials are typically manufactured in thin layers with a thickness of 100 to 25,000 Angstroms, but can also be used in the form of thick films, massive bodies, cylinders, spheres, and the like. The present composition consisting of a thermosetting component, an adhesion promoter, and a porogen can be used to reduce the dielectric constant of the material. Preferred dielectric materials have a dielectric constant k of less than or equal to about 3.0 and more preferably about 1.9 to 3.0. The dielectric material preferably has a glass transition temperature of at least about 350 ° C. This composition layer consisting of thermosetting ingredients, adhesion promoter and pore-forming agent -74- 200406031 Description of the Invention Continued pages, spin-coating, and flow-up The composition agent includes any, which can be similar to cyclic ketone acid amines Such as N-atoms; and the solubility of organic solvents can also be added. Multiple solutions. Other suitable dibutyl ether esters, 2-heptanone, propylene glycol methyl xylene, and the thickness of the type II layer are layers, and the layer thickness is a single integrated battery. Integrated electrical multilayer metal conductors or conductors (68) can be manufactured by solution technology, such as spray coating, roll coating, dip coating or casting; spin-coating is preferred for microelectronics. It is more soluble in solvents. Appropriate solution for the composition of the present invention is suitably pure or mixed with organic, organometallic or inorganic molecules and vaporized at a fixed temperature. Suitable solvents include aprotic solvents such as cyclopentanone, cyclohexanone, cycloheptanone, and cyclooctanone; cyclic alkyl pyrrolidone, wherein the alkyl group contains about 1 to 4 carbon N-cyclohexylpyrrolidone and Its mixture. A variety of other are useful here, as long as these organic solvents can assist adhesion promotion, and at the same time effectively control the viscosity of the resulting solution as a coating liquid, such as stirring and / or heating can be used to assist the solvent including methyl ethyl methyl Ketones, methyl isobutyl ketones, cyclic dimethyl polysiloxanes, butyrolactone, γ-butyrolactone, ethyl 3-ethoxypropionate, polyethylene glycol [di] methyl ether, ether Acetate (PGMEA) and anisole; and hydrocarbon solvents such as toluene, benzene and xylene. A preferred solvent is cyclohexanone. Code 0.1 to about 15 microns. Dielectric intermediateness as a microelectronic device is usually less than 2 microns. This composition can be used in electrical devices, especially interlayer dielectric materials used as interconnect devices associated with circuit ("1C") wafers. Typical wafers have multiple layers of the composition and bulk layers on the surface. It also includes that the area of the composition is between the respective metal conductor areas on the same layer or the same height of the integrated circuit. When the polymer is applied to 1C, the composition solution is a conventional wet coating 200406031 (69) Summary sheet of the invention 丨
法如旋塗法而施用於半導體晶圓;特例也可採用其它眾 所周知之塗覆技術如喷塗、流塗或浸塗。舉例言之,本 組合物之環己酮溶液旋塗至帶有導電元件製造於其上之 基板上,然後塗覆後之基板接受熱處理。本組合物之範 例配方之製法係於周圍條件下嚴格遵照潔淨操作方案, 將本組合物溶解於環己酮,防止任何習知帶有非金屬襯 墊之裝置之任何微量金屬污染。較佳所得溶液以溶液總 重為基準,較佳包含約70至約98重量百分比之熱固性成 分,約2至約30重量百分比之黏著促進劑,約5至約25重 量百分比之成孔劑以及約75至約95重量百分比之溶劑。The method is applied to a semiconductor wafer by a spin coating method; in a special case, other well-known coating techniques such as spray coating, flow coating, or dip coating may also be used. For example, a cyclohexanone solution of the composition is spin-coated onto a substrate with a conductive element manufactured thereon, and then the coated substrate is subjected to heat treatment. The exemplary formulation of this composition is prepared by strictly following the clean operation scheme under ambient conditions, and dissolving this composition in cyclohexanone to prevent any trace metal contamination of any conventional device with a non-metallic pad. The resulting solution is preferably based on the total weight of the solution, and preferably contains about 70 to about 98 weight percent of a thermosetting component, about 2 to about 30 weight percent of an adhesion promoter, about 5 to about 25 weight percent of a pore former, and about 75 to about 95 weight percent solvent.
本發明之用途說明如後。施用本組合物而於表面或基 板之平坦或地形表面上形成一層可藉任一種習知裝置較 佳藉旋塗機進行,此處使用之組合物具有經過控制適合 此種塗覆機之黏著。溶劑之蒸發去除可藉任一種適當手 段進行,例如於旋塗期間單純藉風乾蒸發,或暴露於周 圍環境,或於至多350°C之熱板加熱蒸發去除溶劑。基板 上方可帶有至少一層本較佳組合物,本較佳組合物係由 熱固性成分、黏著促進劑及成孔劑組成。 此處預期涵蓋之基板包含任何所需之實質固體材料。 特別合乎所需之基板層包含薄膜、玻璃、陶瓷、塑膠、 金屬或經塗覆之金屬或複合材料。較佳具體實施例中, 基板包含碎晶粒或坤化鎵晶粒或晶圓表面;封裝表面例 如出現於鍍銅、銀、鎳或金之引線框表面;銅表面例如 出現於電路板或封裝體互連線之銅表面;通孔壁或加勁 -76- 200406031 (70) 發明說明績頁The purpose of the present invention will be described later. The application of the composition to form a layer on a surface or a flat or topographic surface of a substrate can be performed by any known device, preferably by a spin coater. The composition used herein has a controlled adhesion suitable for such a coater. Evaporation and removal of the solvent can be performed by any suitable means, such as simply air-drying and evaporation during spin coating, or exposure to the surrounding environment, or heating and evaporation to remove the solvent on a hot plate up to 350 ° C. The substrate may be provided with at least one layer of the preferred composition, which is composed of a thermosetting component, an adhesion promoter, and a pore former. The substrates contemplated herein include any desired substantially solid material. Particularly desirable substrate layers include films, glass, ceramics, plastics, metals, or coated metals or composite materials. In a preferred embodiment, the substrate includes chipped or gallium-coated die or wafer surfaces; the package surface appears, for example, on a leadframe surface of copper, silver, nickel, or gold; the copper surface appears, for example, on a circuit board or package Copper surface of solid interconnect; through-hole wall or stiffening -76- 200406031 (70) Summary sheet
件表面(「銅」包括裸銅及其氧化物);以聚合物為主之封 裝體或板介質,例如出現於以聚醯亞胺為主之軟式封裝 體、引線或其它金屬合金焊料珠表面、玻璃及聚合物。 有用之基板包括矽、氮化矽、氧化矽、氧碳化矽、二氧 化矽、碳化矽、氧氮化矽、氮化鈦、氮化姮、氮化鎢、 鋁、銅、鈕、有機矽氧烷、有機矽玻璃及氟化矽玻璃。 其它具體實施例中,基板包含封裝體及電路板業界常見 之材料,例如碎、銅、玻璃及聚合物。本組合物也可用 於微晶片、多晶片模組、積層電路板或印刷佈線板用作 為介電基板。本組合物組成之電路板表面上設有各種導 電電路圖案。電路板包括各種加強件例如編織非傳導性 纖維或玻璃布。此種電路板可為單側或雙側。Component surface ("copper" includes bare copper and its oxides); polymer-based packages or board dielectrics, such as appear on the surface of flexible packages, leads, or other metal alloy solder beads based on polyimide , Glass and polymers. Useful substrates include silicon, silicon nitride, silicon oxide, silicon oxycarbide, silicon dioxide, silicon carbide, silicon oxynitride, titanium nitride, hafnium nitride, tungsten nitride, aluminum, copper, buttons, organic silicon oxide Alkane, organosilicon glass and fluorinated silica glass. In other embodiments, the substrate includes materials commonly used in the package and circuit board industries, such as chip, copper, glass, and polymers. The composition can also be used in a microchip, a multi-chip module, a laminated circuit board or a printed wiring board as a dielectric substrate. Various conductive circuit patterns are provided on the surface of a circuit board composed of the composition. The circuit board includes various reinforcing members such as woven non-conductive fiber or glass cloth. Such circuit boards can be single-sided or double-sided.
本組合物製成之各層具有低介電常數、高熱安定性、 高機械強度以及對電子基板表面之絕佳黏著性。因黏著 促進劑為分子分散,故此等層顯示對全部附著層有絕佳 黏著性,該等附著層包括底基板以及上包蓋層或遮罩層 如氧化矽及氮化矽蓋層。使用此等層可免除於至少一種 底劑塗覆施用形式之額外處理步驟,俾達成薄膜黏著於 基板及/或頂面。 施用本組合物至電子用之地形基板後,塗覆後之結構 於約50°C至至多約450°C遞增之溫度範圍,接受烤乾及硬化 加熱處理,俾聚合塗層。因溫度較低不足以完成此處所 述反應,故硬化溫度至少約為300°C。通常較佳硬化係於 約375°C至約425°C之溫度進行。硬化可於習知硬化腔室如 -77 - 200406031 (71) #明說明績頁、; 電路、熱板等進行,通常係於硬化腔室内於惰性(非氧化) 氣氛(氮氣)下進行。除了電路或熱板硬化外,本組合物 也可藉暴露於紫外光輻射、微波輻射或電子束輻射硬化 ,如共同讓與之專利公告案PCT/US96/08678及美國專利案 6,042,994 ; 6,080,526 ; 6,177,143 及 6,235,353 教示,各案以引用方 式併入此處。任一種非氧化或還原氣氛(例如氬、氦、氫 及氮氣處理氣體)只要可有效進行本黏著促進劑改性之熱 固性成分硬化俾達成此處之低k介電層,則皆可用於實施 本發明。 雖然不欲解譯為限制性,觀察到用於製備本低介電常 數組合物之處理,結果獲得熱固性成分、黏著促進劑及 成孔劑之均質溶液。較佳矽烷黏著促進劑可有利地用於 低介電常數組合物發揮多項功能。例如本組合物之處理 可讓較佳聚甲醯矽烷黏著促進劑與成孔劑及熱固性成分 之未飽和結構二者交互作用。相信較佳聚甲醯矽烷之矽 烷部分與成孔劑及熱固性成分交互作用。推定聚甲醯矽 烷可用作為界面活性劑或乳化劑來將成孔劑均勾分散於 低介電組合物之熱固性成分内部。此點對於製造一種組 合物其可獲得帶有尺寸極小的均勻分散孔隙之均質薄膜 (或薄層)相當重要。聚甲醯矽烷之矽烷部分也可與基板 表面交互作用,因而形成用於主要熱固性單體前驅物之 化學鍵結黏著劑界面。曾經提議伸矽烷基/矽烷基可用於 全部組合物作為附著來源,俾藉與界面表面化學鍵結而 固定且牢固固定任何接觸界面。各元件間之交互作用以 -78- 200406031 (72) 發明說明續頁: 及矽烷部分之反應可出現於調配期間以及生成層之前之 處理期間。如前文指示,帶有成孔劑及熱固性成分之矽 烷官能基分散遍布組合物,表示所得各層孔隙度均勻。 矽烷官能度的分散也獲得反應性基團,以及該層優異地 黏著至下方基板表面以及上方表面結構如蓋層或遮罩層 。對此處材料重要地係發現較佳式XXXVII聚甲醯矽烷黏 著促進劑於聚甲醯矽烷之主鏈結構帶有經氫陰離子取代 之矽。此項聚甲醯矽烷之特色將可··(1)與成孔劑均勻混 合而形成均質組合物,(2)與熱固性成分具有反應性;(3) 均勻攙混且分散成孔劑於熱固性成分,獲得均勾組合物 ,結果導致小孔均勻分布於最終多孔層,以及⑷產生經 聚甲醯矽烷改性之熱固性組合物及多孔層,其具有改良 之黏著性能。 如前述,本黏著促進劑改性熱固性成分⑻塗層可作為 中間層且可被其它塗層所覆蓋,例如其它介電(氧化矽) 塗層、氧化矽改性陶瓷氧化物層、含矽塗層、含矽碳塗 層、含矽氮塗層、含矽-氮-碳塗層、仿鑽石碳塗層、氮 化鈦塗層、氮化鈕塗層、氮化鎢塗層、鋁塗層、銅塗層 、姮塗層、有機矽氧烷塗層、有機矽玻璃塗層、及氟化 矽玻璃塗層。此等多層塗層教示於美國專利第4,973,526號 ,以引用方式併入此處。經充分驗證,於本方法製備之 本聚甲醯矽烷改性之熱固性成分⑻方便成形於製造後之 電子或半導體基板上毗鄰導體路徑間作為線間介電層。 較佳本層具有介電常數小於2.7,較佳小於2.5,更佳小 200406031 (73) 奋明說明績頁 於2.2及最佳小於2.0。Each layer made of the composition has low dielectric constant, high thermal stability, high mechanical strength, and excellent adhesion to the surface of an electronic substrate. Because the adhesion promoter is molecularly dispersed, these layers show excellent adhesion to all adhesion layers, which include the base substrate and the overlying cover or mask layer such as silicon oxide and silicon nitride cover layers. The use of these layers can eliminate the additional processing steps of at least one primer coating application form, and achieve film adhesion to the substrate and / or the top surface. After the composition is applied to a terrain substrate for electronics, the coated structure is subjected to baking and hardening heat treatment at a temperature range of about 50 ° C to at most about 450 ° C, and a polymer coating is applied. Since the lower temperature is not sufficient to complete the reaction described here, the hardening temperature is at least about 300 ° C. It is generally preferred that the hardening be performed at a temperature of about 375 ° C to about 425 ° C. Hardening can be performed in conventional hardening chambers such as -77-200406031 (71) #Specification sheet, circuit, hot plate, etc., usually in a hardening chamber under an inert (non-oxidizing) atmosphere (nitrogen). In addition to circuit or hot plate hardening, the composition can also be hardened by exposure to ultraviolet radiation, microwave radiation, or electron beam radiation, such as commonly assigned patent publications PCT / US96 / 08678 and US patent 6,042,994; 6,080,526; 6 , 177,143 and 6,235,353 teachings, each of which is incorporated herein by reference. Any non-oxidizing or reducing atmosphere (such as argon, helium, hydrogen, and nitrogen treatment gases) can be used to implement the low-k dielectric layer as long as the thermosetting component modified by the adhesion promoter can be effectively cured to achieve the low-k dielectric layer here. invention. Although not intended to be interpreted as a limitation, the treatment used to prepare the present low-dielectric constant composition was observed to obtain a homogeneous solution of a thermosetting component, an adhesion promoter, and a porogen. Preferred silane adhesion promoters can be advantageously used in low dielectric constant compositions to perform multiple functions. For example, the treatment of the composition can allow the better polymethylsilane adhesion promoter to interact with the unsaturated structure of the pore former and the thermosetting component. It is believed that the silane portion of the better polymethylsilylsilane interacts with the pore former and the thermosetting component. It is presumed that polymethysilane can be used as a surfactant or emulsifier to uniformly disperse the pore-forming agent in the thermosetting component of the low-dielectric composition. This is important for making a composition that can obtain a homogeneous film (or thin layer) with uniformly dispersed pores of extremely small size. The silane portion of polysilazane can also interact with the substrate surface, thus forming a chemically bonded adhesive interface for the main thermosetting monomer precursor. It has been proposed that silyl / silyl can be used in all compositions as a source of adhesion by chemically bonding to the interface surface to secure and secure any contact interface. The interaction between the components is described in -78- 200406031 (72) Continued description: The reaction with the silane part can occur during the preparation and during the processing before the formation of the layer. As indicated previously, the silane functional groups with pore-forming agents and thermosetting ingredients are dispersed throughout the composition, indicating that the porosity of the resulting layers is uniform. The dispersion of the silane functionality also obtains reactive groups, and the layer is excellently adhered to the lower substrate surface and the upper surface structure such as a capping layer or a masking layer. It is important to find here that the main structure of the polymethylsilazane adhesion promoter of the preferred formula XXXVII is polysilazane with silicon substituted with hydrogen anions. The characteristics of this polysilazane will be: (1) uniformly mixed with the pore-forming agent to form a homogeneous composition, (2) reactive with the thermosetting component; (3) uniformly mixed and dispersed into the pore-forming agent in thermosetting Ingredients, to obtain a homogeneous composition, as a result of which small pores are uniformly distributed in the final porous layer, and a polymethysilane modified thermosetting composition and a porous layer are produced, which have improved adhesion properties. As mentioned above, the adhesion promoter modified thermosetting component ⑻ coating can be used as an intermediate layer and can be covered by other coatings, such as other dielectric (silicon oxide) coatings, silicon oxide modified ceramic oxide layers, and silicon-containing coatings. Layer, silicon-carbon-containing coating, silicon-nitrogen-containing coating, silicon-nitrogen-carbon-containing coating, diamond-like carbon coating, titanium nitride coating, nitride button coating, tungsten nitride coating, aluminum coating , Copper coating, hafnium coating, organosiloxane coating, organosilicon glass coating, and fluorinated silica glass coating. Such multilayer coatings are taught in U.S. Patent No. 4,973,526, which is incorporated herein by reference. After full verification, the polymethysilane-modified thermosetting component prepared by this method is conveniently formed on the electronic or semiconductor substrate after manufacturing as an inter-line dielectric layer between adjacent conductor paths. It is preferred that this layer have a dielectric constant of less than 2.7, preferably less than 2.5, and more preferably 200406031 (73) Fenming explained that the performance page is 2.2 and the best is less than 2.0.
本薄膜可用於雙道金屬鑲嵌(如銅)處理以及減除金屬 (如鋁或鋁/鎢)處理供積體電路製造之用。本組合物可用 作為蝕刻擋止層、硬罩、氣橋、或被動塗層供顯影已經 完成的晶圓。本組合物可用於期望之全旋塗堆疊膜,例 如教示於Michael E. Thomas,「低keff介電裝置之旋塗堆疊膜」, 固態技術(2001年7月),全文以引用方式併入此處。可與 其它各層堆疊使、用之層包含有機矽氧烷類,例如共同讓 與之美國專利6,143,855以及審查中之美國申請案10/078919, 申請日2002年2月19日教示;漢尼威爾國際公司之市售商 品HOSP⑧;如共同讓與之美國專利6,372,666教示之奈米孔隙 矽氧;漢尼威爾國際公司之市售商品奈米玻璃(NANOGLASS)® E ;共同讓與之WO 01/29052教示之有機矽倍半氧烷;以及 共同讓與之WO 01/29141教示之氟矽倍半氧烷,各案以引用The film can be used for dual metal damascene (such as copper) processing and metal removal (such as aluminum or aluminum / tungsten) processing for integrated circuit manufacturing. The composition can be used as an etch stop layer, a hard mask, an air bridge, or a passive coating for developing a completed wafer. This composition can be used in desired full spin-coated stacked films, such as taught in Michael E. Thomas, "Spin-Coated Stacked Films for Low-keff Dielectric Devices," Solid State Technology (July 2001), which is incorporated herein by reference in its entirety. Office. Can be stacked with other layers and used in layers containing organosiloxanes, such as commonly assigned U.S. Patent 6,143,855 and pending U.S. application 10/078919, teaching date of Feb. 19, 2002; Hani HOSP⑧, a commercial product of Will International Corporation; such as the nanoporous silica which is taught in US Patent 6,372,666; Hanowell International Corporation ’s commercially available nano glass (NANOGLASS) ® E; commonly assigned to WO 01/29052 teaches silicone silsesquioxane; and fluorosilsesquioxane taught jointly by WO 01/29141, each case cited by reference
方式併入此處。 分析試驗方法: 質子NMR :欲分析之2-5毫克材料樣本置於一 NMR管。加 入約0.7毫升氘化氯仿。混合物以手動振搖溶解材料。然 後樣本使用凡立安(Varian) 400 MHz NMR分析。 凝膠滲透層析術(GPC):使用瓦特氏(Waters) 2690分離模組 進行分離,該模組帶有瓦特氏996二極體陣列及瓦特氏410 差異折射計偵測器。分離係於兩根PL凝膠3微米混合E 300 X 7.5毫米管柱,以氯仿流速1毫升/分鐘進行。約1毫克/毫 升濃度溶液注入容積25微升係以重複操作進行。觀察得 -80- 200406031 (74) 發明說明績頁: 良好再現性。 管柱使用分子量介於20,000至500之相對單一分散聚苯乙 晞標準品校準。較低分子量標準品,九種各別分成可經 由九種苯乙晞之寡聚物對應於以丁基為端基之苯乙晞單 體作解析。標準品尖峰分子量對數值匹配洗提時間之第 三次羃多項式。儀器加寬係由半最高峰之全寬度對甲苯 平均洗提比評估得知。 如下製備例1及2之吸收於約284奈米為最大值。層析圖 於低於約300奈米波長吸收之形狀類似。此處結果係對應 於254奈米吸收。尖峰係以可於同時洗提之聚苯乙烯分子 量識別。此等值不可視為製備例1及2寡聚物分子量之測 量值。隨著時間之遞增可定量循序洗提出較高碳寡聚物 、三元體、二元體、寡聚物以及不完全寡聚物。 各成分比單一分散物種觀察得之成分更寬。此種寬度 係由尖峰半最大值之全寬度(分鐘)分析得知。粗略考慮 儀器加寬,計算 見度校正值_[見度銳察值一見度说器] 此處寬度^為尖峰洗提時間對甲苯洗提時間比校正後觀 察得之甲苯寬度。尖峰寬度經由校準曲線被轉成分子量 寬度,且求出對尖峰分子寬度的比值。因苯乙烯寡聚物 分子量係與其大小平方成正比,故相對分子量寬度經由_ 除以二而轉成相對寡聚物尺寸寬度。本程序考慮二物種 之分子組態差異。 丨3C NMR :几初期測量值顯示最大值為4秒,據此設定週 200406031 (75) 發明說明績頁; 期時間獲得量化結果。全部樣本皆溶解於CDC13,收集4000 次掃描。C、CH、CH2及CH3基係透過DEPT指定。DEPT明白 辨識CH2於41 I3pm,指定給金剛烷遺失臂的三個鄰近位置 ,以及明白辨識於30 ppm之CH指定給未經取代位置。鄰 近於附接臂之金剛烷CH2係出現於46-48 ppm。同理,於35 ppm之第四碳以及於31.5 ppm之CH3可指定給第三丁基。於 芳香族區120至123.5間之尖峰群集顯然為未經質子化之芳 香族。基於化學位移,發明人將此等尖峰指定為溴芳香 族碳。145-155 ppm範圍之第四芳香族預期可用於附著於脂 肪族基之芳香族碳,亦即於本例為金剛烷。某些光譜於 約14、23、29及31.5 ppm有額外尖峰。此等尖峰指定給庚烷 ,庚烷係用於洗滌樣本。庚烷相對量實質因樣本而異。 由於庚烷對最終效能不合實際,故發明人未定量庚烷。 NMR條件: •於凡立安優奈特(Varian Unity)伊諾瓦(Inova) 400獲得高解析 度13C NMR光譜。 • 13C 頻率:100.572 MHz。 •閘控4解偶合,使用WALTZ調變 •光譜寬度:25 kHz • 13C π/2脈衝-13微秒。 •循環時間:20秒。 •資料點數:100032,2秒鐘獲得時間。 •零填補至FT之131072點 • 1 Hz指數平順化。 200406031 (76) 發明說明續'頁: ;夜才目@才斤-質:此項分析係於費尼根 (Fmnigan)/MAT TSQ7_三階段四極質譜儀系統進行,該系統 帶有大氣壓游離(API)界面單元,使用惠普系列1〇5〇册以:系 統作為層析入口。質1f離子流以及可變單波長紫外光資 料係對時間-強度層析圖獲得.。 於費諾敏尼克斯路那5-微米苯基-己基管柱(250x4.6毫米) 進行層析術。樣本之自動注入量通常為5至2〇微升濃溶液 ,包括於四氫呋喃及不含四氫呋喃。分析用之濃樣本溶 液之較佳製備係對1〇微升注射液以約5毫克固體產物/毫 升溶解於四氫吱喃。流經管柱之動相為L0毫升/分鐘乙腈/ 水,最初為70/30經歷1分鐘時間,然後以梯度程式規劃於 1〇分鐘時到達驅乙腈,且維持該濃度至㈣鐘為止。 乂氣壓化學游離(APCI)質譜係於分開實驗記錄於正及負 游離iL APCI對終產物(分子結構式可提供較多資訊, 提供質子化假分子離子,包括與乙赌基體之加合物。 %箪放電為5微安培,正游離約5千伏特以及負游離 千伏特加熱後之毛細管線維持於2〇〇°c,氣化器單元 維持於400。。。四極質量分析後之離子偵測系統設定於15 千伏特轉化dynode以及·伏特電子倍增器電|。質譜典 土 2万、丨·0移/掃描1己錄’負游離為約m/z 50至2000 a.m.u.以及 正杆離為約m/z 150 a m u.以上。分開正離子實驗中,於低質- 周又/ ^ ~τ'模式’質量範圍掃描達2000 a.m.u.,以及高質 量μ周又/板準模式掃描達4000 a.m.u.。 術(DSC) : DSC測量係使用ΤΑ儀器公司 -83- 200406031 、發明說明績頁 2920差異掃描卡計結合控制器及關聯的軟體進行。標準 DSC單元其溫度係於250。(:至72穴範圍(惰性氣氛:%毫升/ 分鐘氮氣)用於分析。液態氮用作為冷卻氣體來源。使用 麥特勒妥里多(Mettler Toledo)分析天平,準確度士 〇 〇〇〇1克,仔 細稱量小量(1(M2毫克)樣本至自動DSC鋁樣本盤(零件編號 990999-901)。樣本係以蓋覆蓋住盤而包封,蓋事先於中心 穿孔允許出氣。樣本於氮氣下以1〇(rc /分鐘速率由〇。〇加熱 至450°C (週期1),然後以1〇〇。〇 /分鐘速率冷卻至叱。即刻以 100 C /分鐘速率由〇°C加熱至450°C進行第二週期(重複週期^) 。交聯溫度由第一週期決定。 gTIfi分析· FTIR光譜係使用尼可麗馬革那(Nicolet Magna) 550 FTIR光譜儀於透射模式獲得。於未經塗覆之基板獲得基 板背景光譜。使用基板作為背景,獲得薄膜光譜。分析 薄膜光譜之尖峰位置與強度變化。 介電常數:將鋁薄膜塗覆於硬化層上,然後於1 MHz進 行電容-電壓測量,以及基於層厚度求出k值,測定介電 常數。 玻璃韓換溫唐(Tg):薄膜之玻璃轉換溫度係藉測量薄膜 應力呈溫度之函數測定。薄膜應力測量於KLA 3220富列克 斯(Flexus)上執行。薄膜測量前,未經塗覆之晶圓於500°C退 火60分鐘,以防晶圓本身的應力鬆弛帶來的任何誤差。 然後晶圓沉積以受試材料,通過全部所需方法步驟處理 。然後晶圓置於應力錶上,應力錶測量晶圓之彎曲呈溫 度之函數。儀器計算應力相對於溫度線圖,但晶圓厚度 -84- 200406031 (78) 發明說明績頁: 及薄膜厚度為已知。結果以線圖形式顯示。為了決定Tg 值,劃水平切線(應力相對於溫度線圖斜率值=0)。Tg值 為曲線與水平切線交叉位置。 由於測量過程本身可能影響Tg ’故須報告丁g係於第一 溫度週期後測定、或於使用最高溫之隨後週期測定。Ways are incorporated here. Analytical test method: Proton NMR: A sample of 2-5 mg of the material to be analyzed is placed in an NMR tube. Add about 0.7 ml of deuterated chloroform. The mixture was dissolved by manual shaking. The samples were then analyzed using Varian 400 MHz NMR. Gel Permeation Chromatography (GPC): Waters 2690 separation module is used for separation. This module has a Watt 996 diode array and a Watt 410 differential refractometer detector. Separation was performed on two PL gel 3 micron mixed E 300 X 7.5 mm columns with a flow rate of 1 mL / min in chloroform. About 1 mg / mL concentration solution was injected into a volume of 25 microliters in a repeat operation. Observed -80- 200406031 (74) Summary sheet: Good reproducibility. The columns were calibrated using relatively single dispersed polyphenylene terephthalate standards with molecular weights between 20,000 and 500. For the lower molecular weight standards, the nine types are individually divided and can be resolved by the analysis of the nine types of acetophenone oligomers corresponding to the butylacetophenone monomer. The logarithmic value of the peak molecular weight of the standard matches the third polynomial of the elution time. The widening of the instrument is based on the evaluation of the average elution ratio of toluene to the full width of the half-maximum peak. The absorption in Preparation Examples 1 and 2 below was at a maximum of about 284 nm. The chromatograms are similar in shape at wavelengths below about 300 nm. The results here correspond to 254 nm absorption. Spikes are identified by the molecular weight of polystyrene that can be eluted simultaneously. These values cannot be regarded as the measured molecular weights of the oligomers of Preparation Examples 1 and 2. Higher carbon oligomers, trimers, dimers, oligomers, and incomplete oligomers can be eluted sequentially over time. Each component is broader than that observed for a single dispersed species. This width is known from the full width (minutes) analysis of the half-maximum value of the spikes. Roughly consider widening the instrument and calculating the correction value of visibility_ [seeing sharp observation value of visibility detector] where width ^ is the peak elution time vs. toluene elution time than the observed toluene width after correction. The peak width is converted to a molecular weight width via a calibration curve, and the ratio to the peak molecular width is calculated. Because the molecular weight of styrene oligomer is proportional to the square of its size, the relative molecular weight width is converted to the relative oligomer size width by dividing _ by two. This procedure considers the molecular configuration differences between the two species.丨 3C NMR: The initial measurement value shows a maximum of 4 seconds, and the week is set accordingly. 200406031 (75) Summary page of the invention description; The time is to obtain a quantitative result. All samples were dissolved in CDC13 and 4000 scans were collected. The C, CH, CH2 and CH3 radicals are designated by DEPT. DEPT clearly identified CH2 at 41 I3pm, assigned three adjacent positions of the lost arm of adamantane, and clearly identified CH at 30 ppm as assigned to the unsubstituted position. The adamantane CH2 line near the attachment arm appears at 46-48 ppm. Similarly, the fourth carbon at 35 ppm and CH3 at 31.5 ppm can be assigned to the third butyl. The clusters of peaks between 120 and 123.5 in the aromatic zone are clearly unprotonated aromatics. Based on chemical shifts, the inventors designated these spikes as bromine aromatic carbons. A fourth aromatic in the range of 145-155 ppm is expected to be used for aromatic carbons attached to aliphatic groups, ie, in this case, adamantane. Some spectra have additional spikes at about 14, 23, 29, and 31.5 ppm. These spikes are assigned to heptane, which is used to wash samples. The relative amount of heptane varies substantially from sample to sample. Because heptane was unrealistic for final efficacy, the inventors did not quantify heptane. NMR conditions: • High-resolution 13C NMR spectra were obtained in Varian Unity Inova 400. • 13C frequency: 100.572 MHz. • Gated 4 uncoupling, modulation using WALTZ • Spectral width: 25 kHz • 13C π / 2 pulse -13 microseconds. • Cycle time: 20 seconds. • Data points: 100032, 2 seconds to get time. • Zero padding to 131072 points of FT • 1 Hz exponential smoothing. 200406031 (76) Description of the invention continued: 'Ye Caimu @ 才 斤-质: This analysis was performed on a Fmnigan / MAT TSQ7_ three-stage quadrupole mass spectrometer system with atmospheric pressure free ( API) interface unit, using HP series 1050 book with: the system as the chromatography entrance. Mass 1f ion current and variable single-wavelength UV light data were obtained on time-intensity chromatograms. Chromatography was performed on a 5-micron phenyl-hexyl column (250x4.6 mm) on a Fernominix Luna. The sample injection volume is usually 5 to 20 microliters of concentrated solution, including tetrahydrofuran and no tetrahydrofuran. A preferred preparation of a concentrated sample solution for analysis is to dissolve 10 microliters of injection in tetrahydrofuran at about 5 mg of solid product per milliliter. The mobile phase flowing through the column was L0 ml / min acetonitrile / water, initially at 70/30 for 1 minute, then the gradient program was planned to reach the acetonitrile at 10 minutes, and the concentration was maintained until the chirped bell. Krypton pressure chemical ionization (APCI) mass spectrometry is recorded separately in positive and negative free iL APCI paired end products (the molecular structure formula can provide more information and provide protonated pseudomolecular ions, including adducts with ethyl benzyl matrix). The% tritium discharge is 5 microamperes. The capillary line after heating is about 5 kV and the negative free kV is maintained at 200 ° C, and the gasifier unit is maintained at 400.. The system is set at 15 kV to convert the dynode and the volt electron multiplier. | Mass spectrometry soil 20,000, 丨 · 0 shift / scan 1 recorded, the negative free is about m / z 50 to 2000 amu and the positive pole is about m / z 150 am u. above. In the positive ion separation experiment, the scan in the low-quality-week / ^ ~ τ 'mode' mass range scans up to 2000 amu, and the high-quality μ week / plate-quan mode scans up to 4000 amu. (DSC): DSC measurement is performed using TA instrument-83-200406031, invention description page 2920 difference scanning card meter combined with controller and associated software. The temperature of standard DSC unit is 250. (: to 72 points range ( Inert atmosphere:% ml / min nitrogen ) For analysis. Liquid nitrogen is used as a source of cooling gas. An analytical balance using Mettler Toledo, with an accuracy of 0.0001 g, is carefully weighed in small (1 (M2 mg) samples to Automatic DSC aluminum sample tray (Part No. 999999-901). The sample is enclosed with a cover to cover the tray. The cover is perforated in the center to allow gas to escape. The sample is heated under nitrogen at a rate of 10 (rc / minute from 0 to 0). 450 ° C (Cycle 1), and then cooled to 以 at a rate of 100 ° C / min. Instantly heat from 0 ° C to 450 ° C at a rate of 100 C / min for a second cycle (repeated cycle ^). Crosslinking The temperature is determined by the first period. GTIfi analysis. FTIR spectra were obtained in transmission mode using a Nicolet Magna 550 FTIR spectrometer. The background spectrum of the substrate was obtained on an uncoated substrate. The substrate was used as the background to obtain Thin film spectrum. Analyze the change in peak position and intensity of the thin film spectrum. Dielectric constant: Coat an aluminum thin film on a hardened layer, then perform capacitance-voltage measurement at 1 MHz, and determine the k value based on the layer thickness to determine the dielectric constant . Li Han Teng Tang (Tg): The glass transition temperature of the film is determined by measuring the film stress as a function of temperature. The film stress measurement is performed on KLA 3220 Flexus. Before the film measurement, the uncoated The wafer is annealed at 500 ° C for 60 minutes to prevent any errors caused by the stress relaxation of the wafer itself. The wafer is then deposited with the test material and processed through all required method steps. Then the wafer is placed on a stress gauge. The stress gauge measures the bending of the wafer as a function of temperature. The instrument calculates the stress versus temperature line graph, but the wafer thickness is -84- 200406031 (78) Description Sheet: and the film thickness is known. The results are displayed as a line graph. To determine the Tg value, draw a horizontal tangent line (stress vs. temperature plot slope value = 0). The Tg value is where the curve crosses the horizontal tangent. Since the measurement process itself may affect Tg ', it must be reported that Ding g is measured after the first temperature cycle or the subsequent cycle using the highest temperature.
等溫f景分折重量耗才貝一 •總重f耗損係於TA儀器 公司2950熱重分析儀(TGA)測定,TGA係結合TA儀器公司熱 分析控制器及關聯軟體使用。使用25°C至1000°C之溫度範 圍以及0.1°c至100°C/分鐘加熱速率之柏帝涅(Platinel)II熱偶及 標準爐。小量樣本(7至12毫克)係於TGA天平(解析度:ο」 克;準確率··至土0.1%)稱重,於鉑盤上加熱。樣本於氮 下以掃除速率1〇〇毫升/分鐘(6 0耄升/分鐘至爐以及4〇毫升/ 分鐘至天平)加熱。樣本於氮下於20°C平衡20分鐘,然後 以10°C /分鐘速率將溫度升高至200°C及於200°C維持1〇分鐘。Isothermal f-field analysis is based on weight loss. • Total weight f loss is measured by TA Instruments 2950 Thermogravimetric Analyzer (TGA). TGA is used in conjunction with TA Instrument's thermal analysis controller and related software. Use a Platinum II thermocouple and standard furnace with a temperature range of 25 ° C to 1000 ° C and a heating rate of 0.1 ° c to 100 ° C / min. A small amount of sample (7 to 12 mg) was weighed on a TGA balance (resolution: ο ″ g; accuracy ··· to 0.1%) and heated on a platinum plate. The samples were heated under nitrogen at a sweep rate of 100 ml / min (60 liters / min to the furnace and 40 ml / min to the balance). The samples were equilibrated at 20 ° C for 20 minutes under nitrogen, then the temperature was increased to 200 ° C at a rate of 10 ° C / minute and maintained at 200 ° C for 10 minutes.
然後溫度以斜坡方式以10°C /分鐘速率升高至425°C且於425 °C維持4小時。計算於425°C經4小時時間之重量耗損。 收縮率:薄膜收縮率係藉測量處理前與處理後之膜厚 度測定。收縮率係以占原先膜厚度之百分比表示。膜厚 度縮小,則收縮率為正。實際厚度測量係使用J A.伍藍 (J.A.W〇〇llam)M-88分光光譜橢圓儀以光學方式進行。使用考 曲(Cauchy)模式來計算最匹配的ψ及δ(橢圓計量術細節可參-考例如「分光光譜擴圓計量術以及反射計量術」,作者η· G· Thompkins 及 William A· McGahan,約翰威力父子公司,a% 年)。 折射率:折射率之測量係使同J A 、 - j J.A·伍監Μ-88分光光譜橢 -85 - 200406031 (79) 發初說明績頁: 圓儀連同厚度之測量一起進行。使用考曲模式來計算最 匹配的ψ及δ。除非另行註明,否則折射率係於波長633奈 米報告(橢圓計量術細節可參考例如「分光光譜橢圓計量 術以及反射計量術」,作者H.G. Thompkins及William A. McGahan ,約翰威力父子公司,1999年)。 模量及硬度:模量及硬度係使用附有儀器之凹口測試 測定。測量時使用MTS奈米凹口機XP(MTS系統公司,田 納西州橡樹脊)。特別使用連續挺度測量法,該方法可準 確且連續地測定模組及硬度,而非測量卸下曲線之各別 值。系統係使用帶有名目模量72+-3.5 GPa之融合矽氧校準 。融合矽氧之模量係得自500至1000奈米凹口深度平均值 。薄膜之模量及硬度值係由模量相對於深度曲線之最小 值得知,典型係占膜厚度之5%至15%。 膠帶試驗:膠帶試驗係遵照ASTM D3359-95指示進行。根 據後述於介電層上刻劃格子。以下述方式跨格子記號進 行膠帶試驗:(1) 一片黏膠帶(較佳為史考屈(Scotch)品牌 #3m600-l/2xl296)置於該層上且堅實下壓獲得良好接觸;以 及(2)然後相對於該層表面夾角180度,快速且均勻地扯開 膠帶。若該層於晶圓上維持完好,則樣本視為合格;若 有部分或全部薄膜隨著膠帶被扯開,則視為不合格。 · 釦拉扯試驗:經過環氧樹脂塗覆之釦附著於含本發明 層之晶圓表面。陶瓷被板施用於晶圓被側,防止基板彎 曲以及應力不當地集中於釦邊緣。然後藉試驗裝置,採 用標準拉扯方..案步驟,於晶圓表面正交方向拉扯釦。應 -86 - 200406031 (80) 發明說㈣磺頁 力施加於故障點,然後記錄界面所在位置。 溶劑相容性:溶劑相容性係藉測量使用溶劑處理前及 後之薄膜厚度、折射率、FT1R光譜及介電常數決定。對 相容性溶劑而言未觀察得顯著變化。The temperature was then ramped up to 425 ° C at a rate of 10 ° C / minute and maintained at 425 ° C for 4 hours. Calculate weight loss at 425 ° C over 4 hours. Shrinkage: Film shrinkage is measured by measuring film thickness before and after treatment. Shrinkage is expressed as a percentage of the original film thickness. When the film thickness is reduced, the shrinkage is positive. The actual thickness measurement was performed optically using a J.A. Woollam M-88 spectroscopic ellipsometer. Use the Cauchy mode to calculate the best match of ψ and δ (ellipse metrology details can be found in-for example, "spectrospectral rounding metrology and reflection metrology", authors η · G · Thompkins and William A · McGahan, John Willy & Sons, a% years). Refractive index: The measurement of refractive index is the same as J A,-j J.A. Wu Jian M-88 spectroscopic spectrum ellipse -85-200406031 (79) Initial performance sheet: Round instrument and thickness measurement. Use the test mode to calculate the best matching ψ and δ. Unless otherwise noted, the refractive index is reported at a wavelength of 633 nanometers (for ellipsometry details refer to, for example, "Spectrum Ellipsometry and Reflectometry", authors HG Thompkins and William A. McGahan, John Willy & Sons, 1999 ). Modulus and hardness: Modulus and hardness are measured using a notch test with an instrument. MTS nanonotch XP (MTS Systems, Oak Ridge, Tennessee) was used for the measurements. In particular, the continuous stiffness measurement method is used, which can accurately and continuously determine the module and hardness, instead of measuring the individual values of the unloading curve. The system uses a fused silica calibration with a nominal modulus of 72 + -3.5 GPa. The modulus of the fused silica is obtained from an average of 500 to 1000 nanometer notch depth. The modulus and hardness of the film are based on the smallest value of the modulus versus the depth curve. Tape test: The tape test is performed in accordance with ASTM D3359-95. The grid is scribed on the dielectric layer as described later. The tape test was performed across the lattice marks in the following manner: (1) a piece of adhesive tape (preferably Scotch brand # 3m600-l / 2xl296) was placed on this layer and pressed down firmly to obtain good contact; and (2) ) Then, with an angle of 180 degrees with respect to the surface of the layer, quickly and evenly tear the tape apart. If the layer remains intact on the wafer, the sample is considered acceptable; if some or all of the film is torn off with the tape, it is considered unacceptable. • Buckle pull test: An epoxy-coated buckle is attached to the surface of a wafer containing the layer of the present invention. The ceramic cover plate is applied to the wafer cover side to prevent the substrate from bending and stress from being improperly concentrated on the edge of the buckle. Then borrow the test device and use the standard pull square .. procedure to pull the buckle perpendicular to the wafer surface. Ying -86-200406031 (80) Invented that the force was applied to the point of failure, and then the interface location was recorded. Solvent compatibility: Solvent compatibility is determined by measuring the film thickness, refractive index, FT1R spectrum, and dielectric constant before and after solvent treatment. No significant changes were observed for compatible solvents.
平均孔隙直徑:樣本浸泡於樣本管之77 °K液態氮浴内 ,於微麥瑞提克斯(Micromeretics) ASAP 2000自動等溫氮下吸附 儀,使用UHP (超高純度產業用氣體)氮氣測量多孔樣本之 氮氣等溫線。 用於準備樣本,首先使用標準處理條件,將材料沉積 於矽晶圓上。對各樣本準備三片晶圓,膜厚度約6000埃 。使用刀片由晶圓刮下薄膜獲得粉末樣本。粉末樣本於 稱重前於180°C爐内預先乾燥,小心將粉末倒入10毫米内 徑樣本管,然後於180°C於0.01托耳除氣大於3小時時間。Average pore diameter: The sample is immersed in a 77 ° K liquid nitrogen bath of the sample tube, and measured in a Micromeretics ASAP 2000 automatic isothermal nitrogen adsorption apparatus, using UHP (ultra-high purity industrial gas) nitrogen measurement Nitrogen isotherms for porous samples. For sample preparation, materials are first deposited on a silicon wafer using standard processing conditions. Three wafers were prepared for each sample with a film thickness of about 6000 Angstroms. A powder sample was obtained by scraping the film off the wafer using a blade. The powder samples were pre-dried in a 180 ° C oven before weighing. Carefully pour the powder into a 10 mm ID sample tube, and then degas at 180 ° C at 0.01 Torr for more than 3 hours.
除非分析顯示需要較長時間,否則係以5秒平衡間隔時 間自動測量氮氣的吸附以及解吸附。測量等溫所需時間 係與樣本質量、樣本孔隙容積、測量的資料點數、平衡 間隔以及P/Po公差(P為樣本管内實際樣本壓力。P〇為儀器 外側周圍壓力)成正比。儀器測量氮氣等溫線,將氮氣相 對於P/Po作圖。 使用BE丁方程式之線性段(獲得R2匹配〉0.9999 ),使用BET 理論,由氮氣吸收等溫線之下方P/Po區計算名目BET表面— 積[固體表面多層氣體吸收之Brunauer、Emmett、Teller方法,揭 示於 S.昼runauer,P. H. gmmett,Ε·工eller ;美國化學會期刊,60,309-319 (1938)]。 -87- 200406031 (81) 發明說明績頁 孔隙容積係由於相對壓力P/Po值吸附之氮氣容積計算, 通常P/Po約等於0.95,係位於等溫線的平坦區,於該處完 成冷凝,假設吸附氮之密度等於液態氮,以及假設於此 種P/Po,全部孔隙皆係以冷凝氮填補。Unless analysis shows that it takes a long time, the nitrogen adsorption and desorption are automatically measured at 5 second equilibration intervals. The time required for isothermal measurement is directly proportional to sample mass, sample pore volume, measured data points, equilibrium interval, and P / Po tolerance (P is the actual sample pressure in the sample tube. P0 is the pressure around the outside of the instrument). The instrument measures the nitrogen isotherm and plots the nitrogen against P / Po. Using the linear segment of the BE Ding equation (to obtain an R2 match> 0.9999), using the BET theory, calculate the nominal BET surface-product from the P / Po area below the nitrogen absorption isotherm [Brunauer, Emmett, Teller method of solid surface multilayer gas absorption] Revealed by S. Day Runauer, PH Gmmett, E. Geller; Journal of the American Chemical Society, 60, 309-319 (1938)]. -87- 200406031 (81) Description of the invention The pore volume is calculated based on the nitrogen volume absorbed by the relative pressure P / Po value. Usually, P / Po is about 0.95. It is located in the flat area of the isotherm, where condensation is completed. It is assumed that the density of adsorbed nitrogen is equal to liquid nitrogen, and that in this P / Po, all pores are filled with condensed nitrogen.
孔徑分布係使用由氮等溫理論(使用凱氏方程式),使 用 BJH 孔徑分布(E. P. Barret,L· G· Zoyner,Ρ· P. Halenda ;美國化學會 期子《],73,373-380 (1951))由氮等溫圖吸收臂計算而得。此處 使用凱氏方程式,係有關抑制蒸氣壓曲率;以及海瑟 (Halsey)方程式說明吸附之氮單層厚度相對於P/Po,將冷凝 氮容積相對於P/Po換算成為於特定孔徑範圍之孔隙容積。 平均汽缸孔徑D為汽缸直徑,該汽缸具有與樣本相同 之名目BET表面積Sa(平方米/克)以及孔隙容積Vp(立方釐 米/克連結佈線故D (奈米)= 4000 Vp/Sa。 熱解吸附質譜術:熱解吸附質譜術(TDMS)係用於材料接 受熱處理時,分析解吸附物種而測定材料之熱穩定性。The pore size distribution is based on the nitrogen isothermal theory (using the Kjeldahl equation) and the BJH pore size distribution (EP Barret, L.G. Zoyner, P.P. Halenda; 1951)) Calculated from the nitrogen isotherm absorption arm. The Kelvin equation is used here to suppress the vapor pressure curvature; and the Halsey equation states that the thickness of the adsorbed nitrogen single layer is relative to P / Po, and the volume of condensed nitrogen relative to P / Po is converted to a specific pore size range. Pore volume. The average cylinder bore diameter D is the cylinder diameter. The cylinder has the same nominal BET surface area Sa (square meters / gram) and the pore volume Vp (cubic centimeters / gram), so D (nanometer) = 4000 Vp / Sa. Pyrolysis Adsorption mass spectrometry: Thermal desorption mass spectrometry (TDMS) is used to analyze the desorption species and determine the thermal stability of materials when they are subjected to heat treatment.
TDMS測量係於高度真空系統進行,系統配備有晶圓加 熱器以及質譜儀,質譜儀之位置係接近晶圓正面。晶圓 使用加熱燈加熱,由背側加熱晶圓。晶圓溫度藉熱偶測 量,熱偶係接觸晶圓正面。加熱燈及熱偶係連結至可程 式溫度控制器,該控制器允許進行若干溫度升降以及溫 度維持週期。質譜儀為希頓(Hiden)分析公司HAL IV RC RGA 301。質譜儀及溫度控制器皆連結至電腦,電腦讀取且記 錄質譜儀以及溫度信號相對於時間。 為了進行TDMS分析,首先使用標準處理方法,沉積材 料於8吋晶圓上呈薄膜。然後晶圓置於TDMS真空系統, -88 - 200406031 (82) 發明說衲績頁 系統藉幫浦減壓至低於le-7托耳壓力。然後使用溫度控制 器開始進行溫度升降。使用電腦記錄溫度及質譜儀信號 。用於升降溫度約每分鐘10°C之典型測量,每20秒記錄一 次完整質量掃描以及一次溫度測定。測量完成後分析於 指定時間之質譜以及於指定時間之溫度。 實施例: 比較例A : 發明人測定類似發明人之國際專利公告案WO 01/78110實 施例5之組合物之介電常數,獲得介電常數為2.7。 比較例B : 雖然WO 00/31183教示聚丁二晞可用作為成孔劑,發明人 嘗試將聚丁二晞用作為成孔劑,發明人將聚丁二晞添加 至類似發明人之審查中之美國申請案60/350187,申請曰 2002年1月15日之發明實施例4-7之組合物,得知無論聚丁 二烯之分子量如何,組合物之折射率皆不變,如下表6所 示,因而無法達成較低介電常數之材料。 表6 成孔劑 成孔劑% 黏著促進劑% 溶劑 1折射率 聚 丁二烯(Mw 1800) 35 6.7 二甲苯 1.629 以苯基為端基之 聚 丁二烯(Mw 1000) 35 6.7 環己酮 1.623 聚(茚-共聚合-香 豆素酮)(Mw 735) 35 6.7 環己酮 1.602 聚(茚-共聚合-香 豆素酮)(Mw 735) 35 6.7 二甲苯 1.607 聚(茚-共聚合-香 豆素酮)(Mw 1090) 35 6.7 環己酮 1.600 聚(茚-共聚合-香 豆素酮)(Mw 1090) 35 6.7 二甲苯 1.595 (83) 200406031 製備例: Μ備例1 -埶固性成製備(此虛稿作為「P1__l1 步驟⑻:1,3,5,7-肆(3V4'-溴苯基)金剛烷(顯示於圖lA). l,3/4-貳[1',3',5、參(3〃/4〃-溴苯基)金剛烷_7'基]苯(顯示 义圖 1(:)以及至少153-貳{374:[1〃53〃,5〃-參(3,〃/4,〃-溴苯基)金剛境7,, 基]苯基} -5,7-貳{ 3〃〃/4〃〃-溴苯基}金剛烷(顯示於圖ic 』< >昆 合物之製備(合稱為「P1步驟⑻產物」)。TDMS measurement is performed in a high vacuum system. The system is equipped with a wafer heater and a mass spectrometer. The position of the mass spectrometer is close to the front of the wafer. The wafer is heated using a heating lamp, and the wafer is heated from the back side. Wafer temperature is measured by a thermocouple, which is in contact with the front side of the wafer. The heating lamp and thermocouple are connected to a programmable temperature controller that allows several temperature rises and falls and temperature maintenance cycles. The mass spectrometer was a Hiden analysis company HAL IV RC RGA 301. The mass spectrometer and temperature controller are connected to a computer. The computer reads and records the mass spectrometer and temperature signal versus time. For TDMS analysis, standard processing methods were used first, and the deposited material was thin-filmed on an 8-inch wafer. The wafer is then placed in a TDMS vacuum system. -88-200406031 (82) Invented the performance sheet. The system decompressed to a pressure of less than 7 torr by pump. Then use the temperature controller to start temperature rise and fall. Use a computer to record temperature and mass spectrometer signals. It is used for typical measurement of temperature rise and fall of about 10 ° C per minute, and a complete mass scan and temperature measurement are recorded every 20 seconds. After the measurement is completed, the mass spectrum at the specified time and the temperature at the specified time are analyzed. Example: Comparative Example A: The inventor measured the dielectric constant of the composition of Example 5 in the International Patent Publication WO 01/78110 of a similar inventor, and obtained a dielectric constant of 2.7. Comparative Example B: Although WO 00/31183 teaches that polybutadiene can be used as a pore-forming agent, the inventor tried to use polybutadiene as a pore-forming agent, and the inventor added polybutadiene to a similar U.S. application under review 60/350187 The application of the compositions of Invention Examples 4-7 dated January 15, 2002 shows that the refractive index of the composition is the same regardless of the molecular weight of polybutadiene, as shown in Table 6 below. Low dielectric constant materials. Table 6 Pore-forming agent% Pore-forming agent% Adhesion promoter% Solvent 1 Polybutadiene (Mw 1800) 35 6.7 Xylene 1.629 Polybutadiene (Mw 1000) with phenyl end group 35 6.7 Cyclohexanone 1.623 poly (indene-copolymer-coumarinone) (Mw 735) 35 6.7 cyclohexanone 1.602 poly (indene-copolymer-coumarinone) (Mw 735) 35 6.7 xylene 1.607 poly (indene-copolymerization) -Coumarinone) (Mw 1090) 35 6.7 Cyclohexanone 1.600 Poly (indene-copolymer-coumarinone) (Mw 1090) 35 6.7 Xylene 1.595 (83) 200406031 Preparation example: Μ 备 例 1-埶Preparation of solids (this dummy draft is used as "P1__l1 Step ⑻: 1, 3, 5, 7- (3V4'-bromophenyl) adamantane (shown in Figure 1A). L, 3 / 4- 贰 [1 ' , 3 ', 5, ginseng (3〃 / 4〃-bromophenyl) adamantane-7'yl] benzene (shown in Figure 1 (:) and at least 153- 贰 {374: [1〃53〃, 5〃 -Ginseng (3, 〃 / 4, 〃-bromophenyl) adamantyl 7,, yl] phenyl} -5,7- 贰 {3〃〃 / 4〃〃-bromophenyl} adamantane (shown in the figure) ic "< > Preparation of Kun compound (collectively referred to as" P1 step ⑻ product ").
第一容器内載荷金剛烷(200克)、溴苯(1550毫升)及r — 二氣 化鋁(50克)。反應混合物藉恆溫水浴加熱至40°C。第二 基溴(1206克)以4-6小時時間緩衝添加至反應混合物。 混合物於40°C攪拌隔夜。 第二反應容器内載入1000毫升水性氯化氫(5% w/w)。第 一反應容器内容物徐緩排放入第二反應容器内部, 同時 藉外部冰浴維持反應混合物約25-35。(:。有機相(深褐色 相)經分離且以水(1000 t升)洗滌。留下約17〇〇毫升有機相。 第三反應容器内載入2〇.4升石油醚(主要為沸點8〇°c-ii(Tc 之井辛燒)。第二反應容器内容物以1小時時間添加至第 三反應容器。所得混合物至少攪拌1小時。過濾出_沉澱, 濾餅每次以300毫补前述石油醚洗滌,共洗滌兩次。洗滌 後之濾、餅於45°C於奶龛巴脫水隔夜。P1步驟⑻產物產量為 407克乾重。此反應顯示於圖1A至ic如後。圖丨八顯示所得 單體。圖1B顯示所得一般二元體以及更高碳產物,圖1c 顯示所得由圖1B結構式涵蓋之特定二元體及三元體。 包括LC-MS、NMR %及Gpc等分析技術用來識別產物。 -90- 200406031 (84) 發明說明績頁 LC-MS顯示產物為帶有一個金岡Ί燒中心之單體及寡聚物星 狀化合物之錯合混合物。識別之結構式顯示於下表(Ad = 金剛烷;Ph = C6H5 ; Br=溴;t-Bu = -C(CH3)3): IE1步騾(a)產物之HPLC-MS分析 HPLC滯留時間,分鐘 M+峰值 推定結構 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br5(t-Bu) - 16 828 AdPh5Br4 16.3 908 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4(t-Bu) 17.3 886 AdPh4Br5(t-Bu) 18.4 864 AdPh4Br4(t-Bu)2 寬〜19+ 1040 Ad2Ph5Br5 1114 Ad2Ph7Br4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 AcyPlv/Bh 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2Ph6Br7 1348 Αί^ΡΙίγΒΓγ 1426 AdzPhz/Brg 寬〜21+ 1096 Ad2Ph5Br5(t-Bu) 1172 Ad2Ph6Br5(t-Bu) 1174 Ad2Ph5Br6(t-Bu) 1250 Ad2Ph6Br6(t-Bu) 1326 Ad2Ph7Br6(t-Bu) 1328 Ad2Ph6Br7(t-Bu) 1404 Ad2Ph7Br7(t-Bu) 1482 Ad2Ph7Br8(t-Bu)The first container was loaded with adamantane (200 g), bromobenzene (1550 ml) and r — aluminum dioxide (50 g). The reaction mixture was heated to 40 ° C using a thermostatic water bath. Second bromine (1206 g) was added to the reaction mixture in a buffer over a period of 4-6 hours. The mixture was stirred at 40 ° C overnight. The second reaction vessel was filled with 1000 ml of aqueous hydrogen chloride (5% w / w). The contents of the first reaction vessel are slowly discharged into the inside of the second reaction vessel, while maintaining the reaction mixture by an external ice bath for about 25-35. (: The organic phase (dark brown phase) was separated and washed with water (1000 t liters). About 1700 ml of the organic phase remained. A third reaction vessel was charged with 20.4 liters of petroleum ether (mainly boiling point). 80 ° c-ii (Tc's well burned). The content of the second reaction vessel was added to the third reaction vessel over 1 hour. The resulting mixture was stirred for at least 1 hour. The precipitate was filtered off, and the filter cake was 300 milliliters each time. It was washed twice with the petroleum ether mentioned above. After washing, the filter and cake were dehydrated at 45 ° C overnight at Daiba. The product yield in step P1 was 407 grams of dry weight. This reaction is shown in Figures 1A to ic as follows. Figure 8 shows the monomers obtained. Figure 1B shows the general binary and higher carbon products obtained, and Figure 1c shows the specific binary and ternary bodies covered by the structural formula of Figure 1B. Includes LC-MS, NMR%, and Analytical techniques such as Gpc are used to identify the product. -90- 200406031 (84) Description of the invention LC-MS shows that the product is a hybrid mixture of a monomer and an oligomer star compound with a gold firing center. Identify The structural formula is shown in the table below (Ad = Adamantane; Ph = C6H5; Br = bromine; t-Bu = -C (CH3) 3 ): HPLC-MS analysis of IE1 step (a) product HPLC retention time, minutes M + peak estimated structure 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 16 810 AdPh3Br5 ( 16 828 AdPh5Br4 16.3 908 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4 (t-Bu) 17.3 886 AdPh4Br5 (t-Bu) 18.4 864 AdPh4Br4 (t-Bu) 2 Wide ~ 19 + 1040 Ad2Ph5Br5 1114 Ad2P5H2Br2Ph5Br 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2Ph6Br7 1348 Αί ^ ΡΙίγΒΓγ 1426 AdzPhz / Brg wide ~ 21 + 1096 Ad2Ph5Br5 (t-Bu) 1172 Ad2Ph5Br6 (t-Bu) 1174 Ad2Ph5Br6 (t-Bu) -Bu) 1328 Ad2Ph6Br7 (t-Bu) 1404 Ad2Ph7Br7 (t-Bu) 1482 Ad2Ph7Br8 (t-Bu)
-91 - 200406031 (85) 發明說明績頁: NMR 13C分析獲得下列峰值-91-200406031 (85) Summary sheet: NMR 13C analysis obtained the following peaks
13CNMR 峰位置,ppm 結構 153.6, 151.8, 151.1,148.3, 147.6 第四芳香族碳鍵結至金剛烷 136.0, 134.5, 134.2, 133.1, 131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 芳香族C-H 123.1,123.0, 122.9, 122.6, 121.4, 121.1, 120.3 芳香族C-Br 47.7 三個三取代金剛烷之c-h2 46.8 四取代金剛烷之c-h2 41.0 毗鄰於未經取代之金剛燒位 置之金剛烷之c-h2 39.3, 39.0, 38.9, 38.4, 38.1 金剛烷之第四(脂肪族)碳 35.2 第三丁基之第四(脂肪族)碳 31.4 第三丁基之c-h3 • 30 三取代金剛烷之C-H GPC分析結構 -1,3,5,7-肆(374'-溴苯基)金岡I燒(顯示於圖3A)具有尖峰分 子量約360 ; -1,3/4-貳[Γ,37-參(374〃-溴苯基)金剛烷基]苯(顯示於 圖3C)具有尖峰分子量約620 ; -1,3-貳{ 374'- [ Γ,3〃,5〃-參(3〃V4〃' -溴苯基)金剛烷-7〃-基]苯基}-5,7-貳{ 3〃〃/4〃〃-溴苯基}金剛烷(顯示於圖3C)具有尖峰分 子量約900(肩)。 步驟(b) ·· 1,3,5,7-肆[374'-(苯基乙炔基)苯基]金岡|J烷(顯示 於圖ID) ; 1,3/4-貳{Γ,3',5'_參[3〃/4〃-(苯基乙炔基)苯基]金剛 烷-7'-基}苯(顯示於圖1F);以及至少1,3-貳{ 374、[ 1〃,3",5'參 [3〃V4'〃-(苯基乙炔基)苯基]金剛烷-7〃-基]苯基}-5,7-貳 [3〃〃/4〃〃 -(苯基乙炔基)苯基]金剛烷(顯示於圖1F )之混合物 之製備(合稱為「P1步驟(b)產物」)。 -92- 200406031 奋明說明^~ (86) _--2--—— 第一反應器置於氮下’反應器内載入甲苯0500毫升)、 三乙基胺(4000毫升)及如前述製備之P1步驟⑻產物(1_克 乾重)。混合物加熱至80°C,加入貳_(三苯基膦)二氯化鈀 ⑻(亦即[Ph3P]2Pda2)(7.5克)及三苯基膊(亦即[Ph3P])(i5克)° 10分鐘後加入破化銅(1) (7 ·5克)。 苯基乙炔(7 50克)溶液以3小時時間添加至第一反應器。 反應混合物於8〇°C攪拌丨2小時確保反應完成。加入甲苯 (475〇毫升)°於減壓下及最高坑溫下蒸餾去除溶劑,反應 混合物冷卻至約50°C。蒸餾去除三乙基溴化銨(約16〇〇毫升) 。濾餅以每次500耄升甲苯共洗三次。有機相以175〇毫升 鹽酸(10 w/w%)洗滌,然後以水(2〇〇〇毫升)洗滌。 洗滌後之有機相内加水(1000毫升)' 伸乙基二胺四乙酸 (EDTA)( 100克)及二甲基乙醇肟(2〇〇克)。添加約ι5〇毫升氫 氧化銨(25 w/w%)獲得pH = 9。反應混合物攪拌丨小時。有機 相經分離及以水⑽〇毫升)洗滌。使用丁史塔克凝氣瓣, 進行共〉弗条館脫水直到水的逸出停止為止。加入過濾劑 白雲石(100克)(商品名通席爾(丁〇nsii))。混合物加熱至腻 歷30分鐘。使用有έ 6右制 田孔的邓·製過濾器過濾出白雲石,其 餘以甲苯(200毫升、、冰:伙 ,, 开),先滌。加入矽氧(100克)。反應混合物 撥摔30分鐘。以細;^丨尤制、两、、占口。 、 布裝匕’慮為過滤出石夕氧,其餘以甲 苯(200毫升)洗條。250η真斗备^ 、 2500毛升虱水液(20 w/w%)及12.5克Ν-乙 t基半胱Hv加至其中。分離各相。有機相以誦毫 升a I (10/。w/w)洗滌,然後每次以ι〇⑻毫升水共洗雨次。 万、、’力120笔巴之減壓下之蒸餾去除甲苯。内溫不超過約7〇 •93- 200406031 (87) °C。留下深褐色黏稠油(1500-1700毫升)。於反應器之物質 内趁熱加入乙酸異丁酯(2500毫升),生成深褐色溶液(4250 毫升)。 第二反應器内載入17000毫升石油醚(主要為沸點80°C -110 °C之異辛烷)。第一反應内容物以1小時時間添加至第二 反應器及攪拌隔夜。過濾出沉澱,每次以500毫升前述石 油醚共洗四次。產物於45°C於減壓下脫水4小時,以及於 80°C於減壓下脫水5小時。P1步驟(B)產物產量為850-900克。 此項反應顯示於圖1D至1F如後。圖1D顯示所得單體。圖 1E顯示所得一般二元體及高碳產物,圖1F顯示所得圖1F 結構式涵蓋之特定二元體及三元體。 包括LC-MS、NMR 4、NMR 13C、GPC及FTIR分析技術用來識 別產物。 LC-MS分析顯示產物為帶有金剛烷中心之單體及寡聚物 星狀化合物之錯合混合物。識別之結構式顯示於下表 (Ad =金岡丨J 烷籠;T 為甲苯基-PhC三CC6H4- ; t-Bu = -C(CH3)3) · # M+尖峰 提議結構式 la 664 AdT3H 2a 840 AdT4 3a 720 Ad(H)T3(t-Bu) 4a,b 896 AdT4(t-Bu) 5a,b 1326 Ad2T6 6a,b 1402 Ad2T6(C6H4) 3對全部一般結構式觀察得帶有MWdbl00a.u.(加或減PhC^C-基)之類似物。 b對此等結構式觀察得喪失甲苯基臂(-176 a.u.)之類似物。 4 NMR識別芳香族質子(6.9-8 ppm,2·8±0.2Η)以及金岡1J烷籠合 質子(1.7-2.7ppm,1±0.2Η)。 -94- 200406031 (88) 發确說明績頁 ::<·-;;><::'ί::::ϊ;::: >:::〇 ΐ:ίϋ.:^>:-.· ::;:.; 13C NMR分析獲得如下峰值指定:13CNMR peak position, ppm structure 153.6, 151.8, 151.1, 148.3, 147.6 The fourth aromatic carbon is bonded to adamantane 136.0, 134.5, 134.2, 133.1, 131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 Aromatic CH 123.1, 123.0, 122.9, 122.6, 121.4, 121.1, 120.3 Aromatic C-Br 47.7 Three tri-substituted adamantane c-h2 46.8 Four-substituted adamantane c-h2 41.0 Adjacent to unsubstituted diamond Position of c-h2 of adamantane 39.3, 39.0, 38.9, 38.4, 38.1 Fourth (aliphatic) carbon of adamantane 35.2 Fourth (aliphatic) carbon of third butyl 31.4 c-h3 of third butyl • 30 CH GPC structure analysis of tri-substituted adamantane-1,3,5,7-((374'-bromophenyl)) Kanazawa I (shown in Figure 3A) has a peak molecular weight of about 360; -1, 3 / 4-贰 [Γ, 37-gins (374〃-bromophenyl) adamantyl] benzene (shown in FIG. 3C) has a peak molecular weight of about 620; -1,3- 贰 {374'- [Γ, 3〃, 5〃 -Shen (3〃V4〃'-bromophenyl) adamantane-7〃-yl] phenyl} -5,7-7 {3〃〃 / 4〃〃-bromophenyl} adamantane (shown in Figure 3C ) Has a peak molecular weight of about 900 (shoulder). Step (b) ·· 1,3,5,7-[374 '-(phenylethynyl) phenyl] Kanaoka | Jane (shown in Figure ID); 1,3 / 4- 贰 {Γ, 3 ', 5'_see [3〃 / 4〃- (phenylethynyl) phenyl] adamantane-7'-yl} benzene (shown in Figure 1F); and at least 1,3- 贰 {374, [1 〃, 3 ", 5 'reference [3〃V4'〃- (phenylethynyl) phenyl] adamantane-7〃-yl] phenyl} -5,7- 贰 [3〃〃 / 4〃〃- Preparation of a mixture of (phenylethynyl) phenyl] adamantane (shown in Figure 1F) (collectively referred to as "P1 step (b) product"). -92- 200406031 Fenming instructions ^ ~ (86) _-- 2 --—— The first reactor is placed under nitrogen 'The reactor is charged with toluene (500ml), triethylamine (4000ml) and as described above Preparation of the product from step P1 (1-g dry weight). The mixture was heated to 80 ° C, and 贰 ((triphenylphosphine) palladium dichloride) (ie [Ph3P] 2Pda2) (7.5 g) and triphenyl ether (ie [Ph3P]) (i5 g) were added After 10 minutes, broken copper (1) (7.5 g) was added. A solution of phenylacetylene (750g) was added to the first reactor over a period of 3 hours. The reaction mixture was stirred at 80 ° C for 2 hours to ensure that the reaction was complete. Toluene (4750 ml) was added, and the solvent was distilled off under reduced pressure and the highest pit temperature, and the reaction mixture was cooled to about 50 ° C. Triethylammonium bromide (about 160 ml) was removed by distillation. The filter cake was washed three times with 500 liters of toluene each time. The organic phase was washed with 1750 ml of hydrochloric acid (10 w / w%) and then with water (2000 ml). Water (1000 ml) was added to the organic phase after washing 'ethylenediaminetetraacetic acid (EDTA) (100 g) and dimethylethanol oxime (200 g). Add about 50 ml of ammonium hydroxide (25 w / w%) to obtain pH = 9. The reaction mixture was stirred for 1 hour. The organic phase was separated and washed with 100 ml of water. Using Ding Stark condensate flaps, perform dehydration until the escape of water stops. Add the filter agent dolomite (100 g) (trade name Tungsiel (Butnosii)). The mixture was heated to greasy for 30 minutes. The dolomite was filtered out using a Deng-made filter with a 6-gauge field hole, and the remainder was toluene (200 ml, ice: coke, on), and then washed first. Add silica (100 g). The reaction mixture was stirred for 30 minutes. To fine; ^ 丨 Special, two ,, take up the mouth. The cloth dagger is considered to filter out Shi Xi oxygen, and the rest is washed with toluene (200 ml). 250 η of real preparation, 2500 hair lice water (20 w / w%) and 12.5 g of N-ethyl t-cysteine Hv were added thereto. The phases were separated. The organic phase was washed with liter a I (10 / .w / w), and then washed with 10 ml of water each time. The toluene was removed by distillation under a reduced pressure of 120 bar. The internal temperature does not exceed about 70 ° -93-200406031 (87) ° C. Leaves a dark brown, viscous oil (1500-1700 ml). Isobutyl acetate (2500 ml) was added to the contents of the reactor while hot, resulting in a dark brown solution (4250 ml). The second reactor was charged with 17000 ml of petroleum ether (mainly isooctane with a boiling point of 80 ° C -110 ° C). The first reaction content was added to the second reactor over 1 hour and stirred overnight. The precipitate was filtered off and washed four times with 500 ml of the aforementioned petroleum ether each time. The product was dehydrated at 45 ° C under reduced pressure for 4 hours, and 80 ° C under reduced pressure for 5 hours. The yield of the product of step P1 (B) is 850-900 g. This reaction is shown in Figures 1D to 1F as follows. Figure 1D shows the resulting monomer. Figure 1E shows the general binary and high carbon products obtained, and Figure 1F shows the specific binary and ternary bodies covered by the structural formula of Figure 1F. Include LC-MS, NMR 4, NMR 13C, GPC, and FTIR analysis techniques to identify products. LC-MS analysis showed that the product was a complex mixture of monomer and oligomer star compounds with adamantane centers. The identified structural formula is shown in the table below (Ad = 金 金 丨 J alkane cage; T is tolyl-PhC three CC6H4-; t-Bu = -C (CH3) 3) · # M + spikes proposed structural formula la 664 AdT3H 2a 840 AdT4 3a 720 Ad (H) T3 (t-Bu) 4a, b 896 AdT4 (t-Bu) 5a, b 1326 Ad2T6 6a, b 1402 Ad2T6 (C6H4) 3 All the general structural formulas are observed with MWdbl00a.u. (Plus or minus PhC ^ C-based) analogs. b An analogue of the loss of the tolyl arm (-176 a.u.) was observed for these structural formulas. 4 NMR identified aromatic protons (6.9-8 ppm, 2.8 ± 0.2Η) and Jingang 1J alkane caged protons (1.7-2.7ppm, 1 ± 0.2Η). -94- 200406031 (88) Confirmation performance page :: <·-;; > < :: 'ί :::: ϊ; ::: > ::: 〇ΐ: ϋ .: ^ >:-. · ::; ::; 13C NMR analysis obtained the following peak assignments:
13C NMR尖峰位置,ppm 結構 151.3, 151,150, 149.9, 149.8, 149.3, 149.2 第四芳香族碳附接至金剛烷環 132-131,128.5, 125.3, 125,2 C-H芳香族碳 129.6-129.1 芳香族環碳 123.7-122.9, 121.8, 121.1,120.9 第四芳香族碳附接至乙炔 93.6 第四乙炔碳(二取代環上) 90.7, 90.3, 90.1,89.7, 89.5, 89.4, 89.1, 88.8, 88.7 第四乙炔碳 47.5,46.7 四取代金剛烷之c-h2 47.1 四取代金剛烷之c-h3 41 三取代金剛烷之c-h2 39.6 三取代金剛烷之c-h3 39:5, 39.2-39.0, 38.6, 38.2, 35 四取代金剛燒之第四碳 32 芳香環第三丁基之c-h3 30 三取代金剛烷之C-H GPC分析結果: -1,3,5,7-肆[3V4'-苯基乙決基]苯基]金岡完(顯示於圖3D)具 有尖峰分子量約744 ; -1,3/4-貳{ Γ,3\5'-參[3〃/4〃-(苯基乙炔基)苯基]金剛烷-7'-基} 苯(顯示於圖3F)具有尖峰分子量約1300 ; -1,3-貳{ 374' - [ Γ,3〃,5〃-參[3〃'/4'〃 -(苯基乙炔基)苯基]金剛烷-7〃-基]苯基}-5,7-貳(3〃〃/4〃〃-(苯基乙炔基)苯基)金剛烷(顯 示於圖3F)具有尖峰分子量約1680 (肩)。 由GPC得知單體及小分子對寡聚物化合物之比為50± 5%。 FTIR顯示下列: 尖峰,釐米^ (尖峰強度) 結構 3050 (弱) 芳香族C-H 2930 (弱) 金剛烷之脂肪族C-H 2200 (極弱) 乙炔 1600 (極強) 芳香族C = C 1500 (強) -95 - 200406031 (89) 發昉說明績頁 1450 (中等) 1350 (中等) 製備例2 -熱固性成分之製備(此處稱作為「P2 i ) 步驟(a) : 1,3,5,7-肆(3'/4'_溴苯基)金岡J烷(顯示於圖1A);13C NMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8, 149.3, 149.2 The fourth aromatic carbon is attached to the adamantane ring 132-131, 128.5, 125.3, 125, 2 CH aromatic carbon 129.6-129.1 Aromatic Group ring carbons 123.7-122.9, 121.8, 121.1, 120.9 The fourth aromatic carbon is attached to acetylene 93.6 The fourth acetylene carbon (on the disubstituted ring) 90.7, 90.3, 90.1, 89.7, 89.5, 89.4, 89.1, 88.8, 88.7 Tetraacetylene carbon 47.5, 46.7 c-h2 of tetra-substituted adamantane 47.1 c-h3 of tetra-substituted adamantane 41-c-h2 of tri-substituted adamantane 39.6 c-h3 of tri-substituted adamantane 39: 5, 39.2-39.0, 38.6 , 38.2, 35 Fourth carbon of tetra-substituted adamantine 32 c-h3 of third butyl ring of aromatic ring 30 CH GPC analysis results of tri-substituted adamantan: -1,3,5,7- 肆 [3V4'-phenyl Ethyl] phenyl] Kinoka Kan (shown in Figure 3D) has a peak molecular weight of about 744; -1,3 / 4- {Γ, 3 \ 5'-reference [3〃 / 4〃- (phenylethynyl ) Phenyl] adamantane-7'-yl} benzene (shown in Figure 3F) has a peak molecular weight of about 1300; -1,3- 贰 {374 '-[Γ, 3〃, 5〃-〃 [3〃' / 4'〃- (phenylethynyl) phenyl] adamantane-7〃-yl] phenyl} -5 7-fluorene (3 '/ 4'-(phenylethynyl) phenyl) adamantane (shown in Figure 3F) has a peak molecular weight of about 1680 (shoulder). From GPC, it is known that the ratio of monomers and small molecules to oligomeric compounds is 50 ± 5%. FTIR shows the following: Spikes, cm ^ (spike intensity) Structure 3050 (weak) Aromatic CH 2930 (weak) Adamantane's aliphatic CH 2200 (very weak) Acetylene 1600 (very strong) Aromatic C = C 1500 (strong) -95-200406031 (89) Description sheet 1450 (medium) 1350 (medium) Preparation Example 2-Preparation of thermosetting ingredients (herein referred to as "P2i") Step (a): 1, 3, 5, 7- (3 '/ 4'_bromophenyl) Jingang Jane (shown in Figure 1A);
1,3/4-貳[Γ,3',5'-參(3〃/4〃-溴苯基)金剛烷-7、基]苯(顯示於圖 1(:)以及至少1,3-貳{ 374'-[1〃,3〃,5〃-參(3〃74〃'-溴苯基)金剛烷-7"-基]苯基} -5,7-貳{ 3〃〃/4〃〃 -溴苯基}金剛烷(顯示於圖1C)之混 合物之製備(合稱為「Ρ1步驟⑻產物」)。 第一反應容器内載入1,4-二溴苯(587.4克)及三氯化鋁(27.7 克)。反應混合物藉恆溫水浴加熱至90°C,及未經攪拌於 此溫度維持1小時,以及伴以攪拌又維持1小時。反應混 合物冷卻至50°C。金剛烷(113.1克)添加至冷反應混合物。 以4小時時間將第三丁基溴苯(7 96.3克)添加至反應混合物 。反應混合物又攪拌12小時。1,3 / 4- 贰 [Γ, 3 ', 5'-ginseng (3〃 / 4〃-bromophenyl) adamantane-7, yl] benzene (shown in Figure 1 (:) and at least 1,3-贰 {374 '-[1〃, 3〃, 5〃-ginseng (3〃74〃'-bromophenyl) adamantane-7 " -yl] phenyl} -5,7- 贰 {3〃〃 / 4 Preparation of a mixture of hydrazone-bromophenyl} adamantane (shown in Figure 1C) (collectively referred to as "P1 step hydrazone product"). The first reaction vessel was charged with 1,4-dibromobenzene (587.4 g) and Aluminum trichloride (27.7 g). The reaction mixture was heated to 90 ° C with a constant temperature water bath, and maintained at this temperature for 1 hour without stirring, and for 1 hour with stirring. The reaction mixture was cooled to 50 ° C. Adamantane (113.1 g) was added to the cold reaction mixture. Third butyl bromobenzene (7 96.3 g) was added to the reaction mixture over a period of 4 hours. The reaction mixture was stirred for another 12 hours.
第二反應容器内載入鹽酸(566毫升,10%水性w/w)。第一 反應容器内容物於50°C排放入第二反應容器,同時藉外部 冰浴將反應混合物維持於25-35°C。反應物質為淺褐色懸浮 液。有機相為深褐色下相,有機相由反應混合物中分離 。分離之有機相以水(380毫升)洗滌。洗滌後留下約800毫 升有機相。 第三反應容器内載入庚烷(5600毫升)。以1小時時間緩 衝將第二反應容器内容物添加至第三反應容器。懸浮液 至少攪拌4小時,過濾出沉澱。濾餅以每次300毫升庚烷 共洗兩次。P2步驟⑻產物產量為526·9克(濕重)以及470.1克 (乾重)。 -96- 200406031 (90) 發明說明續頁 包括LC-MS、NMR 13C及GPC等分析技術用來識別產物。LC-MS顯示產物為帶有一個金剛烷中心之單體及寡聚物星狀 化合物之錯合混合物。識別之結構式顯示於下表(Ad=金 岡1J 燒;Ph-C6H5 ; Br=溴;t-Bu = -C(CH3)3): IE2步驟(a)產物之HPLC-MS分析 HPLC滯留時間,分鐘 M+峰值 推定結構 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 * 16 810 AdPh3Br5(t-Bu) 16 828 AdPh5Br4 16.3 908 AdPh4Br6 16.5 908 AdPh4Br6 17.1 808 AdPh4Br4(t-Bu) 17.3 886 AdPh4Br5(t-Bu) 18.4 864 AdPh4Br4(t-Bu)2 寬〜19+ 1040 Ad2Ph5Br5 1114 Ad2Ph7Br4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2Ph6Br7 1348 1426 Ad2Ph7Br8 寬〜21+ 1096 Ad2Ph5Br5(t-Bu) 1172 Ad2Ph6Br5(t-Bu) 1174 Ad2Ph5Br6(t-Bu) 1250 Ad2Ph6Br6(t-Bu) 1326 Ac^PhyBr^t-Bu) 1328 Ad2Ph6Br7(t-Bu) 1404 Ad2Ph7Br7(t-Bu) 1482 Ad2Ph7Br8(t-Bu)The second reaction vessel was filled with hydrochloric acid (566 ml, 10% aqueous w / w). The contents of the first reaction vessel were discharged into the second reaction vessel at 50 ° C, while the reaction mixture was maintained at 25-35 ° C by an external ice bath. The reaction mass was a light brown suspension. The organic phase was a dark brown lower phase, and the organic phase was separated from the reaction mixture. The separated organic phase was washed with water (380 ml). Approximately 800 milliliters of organic phase remained after washing. The third reaction vessel was charged with heptane (5600 ml). The content of the second reaction vessel was added to the third reaction vessel with a buffer of 1 hour. The suspension was stirred for at least 4 hours and the precipitate was filtered off. The filter cake was washed twice with 300 ml of heptane each time. The yield of the product in step P2 was 526.9 grams (wet weight) and 470.1 grams (dry weight). -96- 200406031 (90) Description of the Invention Continued Includes LC-MS, NMR 13C and GPC analysis techniques to identify products. LC-MS showed that the product was a mixed mixture of monomer and oligomer star compounds with an adamantane center. The identified structural formulas are shown in the table below (Ad = Kanaoka 1J; Ph-C6H5; Br = bromine; t-Bu = -C (CH3) 3): HPLC-MS analysis of the product in step (a) of IE2, HPLC retention time, Minute M + peak estimated structure 12.8 598 AdPh3Br3 14 674 AdPh4Br3 14 676 AdPh3Br4 15.3 752 AdPh4Br4 15.8 830 AdPh4Br5 16 830 AdPh4Br5 * 16 810 AdPh3Br5 (t-Bu) 16 828 AdPh5Br4 16.3 908 AdPh4Br4 16.4Ph4Br1 886 AdPh4Br5 (t-Bu) 18.4 864 AdPh4Br4 (t-Bu) 2 Wide ~ 19 + 1040 Ad2Ph5Br5 1114 Ad2Ph7Br4 1116 Ad2Ph6Br5 1118 Ad2Ph5Br6 1192 1194 Ad2Ph6Br6 1270 Ad2Ph7Br6 1272 Ad2P2P2 + Ph6Br2 Ad2Ph6Br5 (t-Bu) 1174 Ad2Ph5Br6 (t-Bu) 1250 Ad2Ph6Br6 (t-Bu) 1326 Ac ^ PhyBr ^ t-Bu) 1328 Ad2Ph6Br7 (t-Bu) 1404 Ad2Ph7Br7 (t-Bu) 1482 Ad2Ph7Br8 (t-Bu)
-97- 200406031 (91) 發明說明續頁 NMR 13C分析獲得下列峰值-97- 200406031 (91) Description of the invention Continued NMR 13C analysis obtained the following peaks
13CNMR 峰位置,ppm 結構 153.6, 151.8, 151.1,148.3, 147.6 第四芳香族碳鍵結至金剛燒 136.0, 134.5, 134.2, 133.1,131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 芳香族C-H 123.1,123.0, 122.9, 122.6, 121.4, 121.1, 120.3 芳香族C-Br 47.7 三個三取代金剛烷之c-h2 46.8 四取代金剛烷之c-h2 41.0 毗鄰於未經取代之金.剛烷位 置之金剛烷之c-h2 39.3, 39.0, 38.9, 38.4, 38.1 金剛燒之第四(脂肪族)石炭 35.2 第三丁基之第四(脂肪族)碳 31.4 第三丁基之c-h3 30 三取代金剛烷之C-H GPC分析結構: -1,3,5,7-肆(374'-溴苯基)金岡J燒(顯示於圖3A)具有尖峰分 子量約360 ; -1,3/4-貳[Γ,3\5' -參(3〃/4〃-溴苯基)金剛烷-7/-基]苯(顯示於 圖3C)具有尖峰分子量約570 ; -1,3-貳{ 374'- [ Γ,3〃,5〃-參(3〃74〃'_ 溴苯基)金剛烷-7〃-基]苯基}-5,7-貳{ 3〃〃/4〃〃-溴苯基}金剛烷(顯示於圖3C)具有尖峰分 子量約860 (肩)。 步騾(b) ·· 1,3,5,7-肆[374'-(苯基乙炔基)苯基]金剛烷(顯示 於圖ID) ; 1,3/4-貳{ 1Ά57-參[3〃/4〃-(苯基乙炔基)苯基]金剛 烷-7'-基}苯(顯示於圖1F);以及至少1,3-貳{ 374f - [ Γ,3〃,5〃-參 [3〃V4'〃-(苯基乙炔基)苯基]金剛烷-7〃-基]苯基}-5,7-貳 [3〃〃/4〃〃 -(苯基乙炔基)苯基]金剛烷(顯示於圖1F )之混合物 之製備(合稱為「Ρ2步驟(b)產物」)。 第一反應器置於氮下,反應器内載入甲苯(6 98毫升)、 200406031 (92) 癸明說明續頁 三乙基胺(1860毫升)及如前述製備之P2步驟⑻產物(465克 乾重)。混合物加熱至80°C。鈀-三苯基膦錯合物(亦即 [Ph(PPh3)2Cl2] (4.2克)添加至反應混合物。等候10分鐘後將三 苯基膦(亦即PPh3)(8.4克)添加至反應混合物。又等候10分 鐘後添加碘化銅(I) (4.2克)至反應混合物。13CNMR peak position, ppm structure 153.6, 151.8, 151.1, 148.3, 147.6 The fourth aromatic carbon is bonded to the diamond calcination 136.0, 134.5, 134.2, 133.1, 131.6, 131.1, 130.2, 130.0, 129.6, 129.3, 128.5, 126.9, 123.8 Aromatic CH 123.1, 123.0, 122.9, 122.6, 121.4, 121.1, 120.3 Aromatic C-Br 47.7 Three tri-substituted adamantane c-h2 46.8 Four-substituted adamantane c-h2 41.0 Adjacent to the unsubstituted gold. C-h2 of adamantane in the adamantane position 39.3, 39.0, 38.9, 38.4, 38.1 4th (aliphatic) charcoal 35.2 3rd butyl fourth (aliphatic) carbon 31.4 3rd butyl c- h3 30 CH GPC analysis structure of tri-substituted adamantane: -1,3,5,7-((374'-bromophenyl)) Kanazawa J (shown in Figure 3A) has a peak molecular weight of about 360; -1,3 / 4- 贰 [Γ, 3 \ 5'-ginseng (3〃 / 4〃-bromophenyl) adamantane-7 / -yl] benzene (shown in Figure 3C) has a peak molecular weight of about 570; -1,3- 贰{374'- [Γ, 3〃, 5〃-ginseng (3〃74〃'_ bromophenyl) adamantane-7〃-yl] phenyl} -5,7- 贰 {3〃〃 / 4〃〃 -Bromophenyl} adamantane (shown in Figure 3C) has a peak molecular weight of about 86 0 (shoulder). Step 骡 (b) ·· 1,3,5,7-[374 '-(phenylethynyl) phenyl] adamantane (shown in Figure ID); 1,3 / 4- 贰 {1Ά57- 参 [ 3〃 / 4〃- (phenylethynyl) phenyl] adamantane-7'-yl} benzene (shown in Figure 1F); and at least 1,3- 贰 {374f-[Γ, 3〃, 5〃- Reference [3〃V4'〃- (phenylethynyl) phenyl] adamantane-7〃-yl] phenyl} -5,7- 贰 [3〃〃 / 4〃〃-(phenylethynyl) benzene Preparation of a mixture of ammonium] damantane (shown in Figure 1F) (collectively referred to as "P2 step (b) product"). The first reactor was placed under nitrogen, and the reactor was charged with toluene (6 98 ml), 200406031 (92) Guiming Instructions continued on triethylamine (1860 ml) and the P2 step ⑻ product (465 g) prepared as before Dry weight). The mixture was heated to 80 ° C. Palladium-triphenylphosphine complex (ie [Ph (PPh3) 2Cl2] (4.2 g)) was added to the reaction mixture. After 10 minutes, triphenylphosphine (ie PPh3) (8.4 g) was added to the reaction mixture After waiting another 10 minutes, copper (I) iodide (4.2 g) was added to the reaction mixture.
以3小時時間將苯基乙炔(348.8克)溶液添加至反應混合 物。反應混合物於80 °C攪掉12小時確保反應芫成。甲苯 (2209毫升)添加至反應混合物,然後於減壓下以及最高坑 溫下蒸餾去除。反應混合物冷卻至約5〇°C ’蒸餾去除三乙 基溴化銨。濾餅以每次250毫升甲苯洗二次。有機相以鹽 酸(10 w/w%)( 500毫升)及水(500毫升)洗滌。A solution of phenylacetylene (348.8 g) was added to the reaction mixture over a period of 3 hours. The reaction mixture was stirred at 80 ° C for 12 hours to ensure the reaction was complete. Toluene (2209 ml) was added to the reaction mixture and then distilled off under reduced pressure and at the highest pit temperature. The reaction mixture was cooled to about 50 ° C 'and triethylammonium bromide was distilled off. The filter cake was washed twice with 250 ml toluene each time. The organic phase was washed with hydrochloric acid (10 w / w%) (500 ml) and water (500 ml).
於有機相内加水(5〇〇毫升)、EDTA( 18.6克)及二甲基乙醇 肟(3.7克)。加入氫氧化銨(25 w/w%)(約93毫升)維持PH = 9。 反應混合物攪拌1小時。有機相與不溶性以及含鈀錯合物 之乳液分離。分離得之有機相以水(500毫升)洗滌。使用 丁史塔克凝氣瓣,將洗滌後之有機相進行共沸蒸餾脫水 直到水的逸出停止為止。加入過濾劑白雲石(商品名通席 爾)(50克),反應混合物加熱至l〇〇°C歷30分鐘。以帶有細 孔的布製過濾器過濾去除白雲石,有機物質以甲苯(2〇〇 毫升)洗〉條。加入梦氧(50克),反應混合物攪拌30分鐘。 矽氧以帶有細孔之布製過濾器過濾出,有機物質以甲苯 (200毫升)洗滌。加入氨水液(20 w/w%)(250毫升)及N_乙醯基 半胱胺酸(12.5克)。分離各相。有機相以鹽酸(10% w/w:) (5〇〇 毫升)洗條。有機物質以每次500毫升水共洗兩次。於約 -99- 200406031 (93) 發确說明績頁、 〜r κ 120毫巴之減壓下蒸餾去除甲苯。反應器溫度不超過70°C 。留下深褐色黏稠油(約500-700毫升)。於反應瓶内趁熱加 入乙酸異丁酯(1162毫升)。生成深褐色溶液(約1780毫升)。Water (500 ml), EDTA (18.6 g) and dimethylethanol oxime (3.7 g) were added to the organic phase. Add ammonium hydroxide (25 w / w%) (about 93 ml) to maintain pH = 9. The reaction mixture was stirred for 1 hour. The organic phase is separated from insoluble and palladium complex-containing emulsions. The separated organic phase was washed with water (500 ml). Using a Ding Stark condensate flap, the washed organic phase was dehydrated by azeotropic distillation until water evolution ceased. Filtering agent dolomite (Thomsell) (50 g) was added and the reaction mixture was heated to 100 ° C for 30 minutes. The dolomite was removed by filtration through a cloth filter with fine pores, and the organic matter was washed with toluene (200 ml). Dream oxygen (50 g) was added and the reaction mixture was stirred for 30 minutes. The silica was filtered through a pore cloth filter, and the organic matter was washed with toluene (200 ml). Aqueous ammonia (20 w / w%) (250 ml) and N-acetamidocysteine (12.5 g) were added. The phases were separated. The organic phase was washed with hydrochloric acid (10% w / w :) (500 ml). The organic matter was washed twice with 500 ml of water each time. At about -99- 200406031 (93) it was confirmed that toluene was distilled off under reduced pressure of ~ r κ 120 mbar. The reactor temperature does not exceed 70 ° C. Leaves a dark brown sticky oil (about 500-700 ml). Add isobutyl acetate (1162 ml) to the reaction flask while hot. A dark brown solution (about 1780 ml) was produced.
第二反應器内載入庚烷(7120毫升)。經1小時時間將第 一反應容器内容物添加至第二反應容器。沉殿至少攪:拌3 小時及過濾去除。產物以每次250毫升庚烷共洗4次。產 物於40毫巴減壓下於80°C脫水。P2步驟(b)產物產量為700克 重或419克乾重。 包括LC-MS、NMR W、NMR 13C、GPC及FTIR分析技術用來識 別產4匆。 LC-MS分析顯示產物為帶有金剛烷中心之單體及寡聚物 星狀化合物之錯合混合物。識別之結構式顯示於下表 (Ad =金岡ij 烷籠;丁為甲苯基-PhC三CC6H4- ; t-Bu = -C(CH3)3): # M+尖峰 1 提議結構式 la 664 AdT3H 2a 840 AdT4 3a 720 Ad(H)T3(t-Bu) 4a’b 896 AdT4(t-Bu) 5a,b 1326 Ad2T6 6a,D 1402 Ad2T6(C6H4)The second reactor was charged with heptane (7120 ml). The contents of the first reaction vessel were added to the second reaction vessel over a period of 1 hour. Shen Dian stir at least: Mix for 3 hours and filter to remove. The product was washed 4 times with 250 ml heptane each time. The product was dehydrated at 80 ° C under a reduced pressure of 40 mbar. The yield of the product of step P2 (b) is 700 g or 419 g dry. Including LC-MS, NMR W, NMR 13C, GPC, and FTIR analysis techniques are used to identify the product. LC-MS analysis showed that the product was a complex mixture of monomer and oligomer star compounds with adamantane centers. The identified structural formulas are shown in the table below (Ad = 金 OKij alkane cage; Butyl is tolyl-PhC three CC6H4-; t-Bu = -C (CH3) 3): # M + 尖峰 1 Proposed structural formula la 664 AdT3H 2a 840 AdT4 3a 720 Ad (H) T3 (t-Bu) 4a'b 896 AdT4 (t-Bu) 5a, b 1326 Ad2T6 6a, D 1402 Ad2T6 (C6H4)
3對全部一般結構式觀察得帶有MW±100a.u.(加或減PhOC-基)之類似物。 b對此等結構式觀察得喪失甲苯基臂(-176 a.u.)之類似物。 4 NMR識別芳香族質子(6.9-8 ppm,2·8±0.2Η)以及金岡J烷籠 合質子(1.7-2.7ppm,1±0.2Η)。 13C NMR分析獲得如下峰值指定: 13C NMR尖峰位置,ppm 結構 151.3, 151,150, 149.9, 149.8, 149.3, 149.2 第四芳香族碳附接至金剛 烷環 -100- 200406031 (94) 132-131,128.5, 125.3, 125.2 129.6-129.1 123.7-122.9, 121.8, 121.1,120.9 93.6 90.7, 90.3, 90.1,89.7, 89.5, 89.4, 89.1,88.8: 88.7 47.5, 46.7 47.1 41 39.6 ¥'明說明績頁: 芳香族碳 第 第 四 香族環碳 族碳附接至乙炔 碳(二取代環上) 第四乙炔碳3 For all general structural formulas, analogs with MW ± 100a.u. (Plus or minus PhOC-group) were observed. b An analogue of the loss of the tolyl arm (-176 a.u.) was observed for these structural formulas. 4 NMR identified aromatic protons (6.9-8 ppm, 2.8 ± 0.2Η) and Jingang Jane caged protons (1.7-2.7ppm, 1 ± 0.2Η). 13C NMR analysis obtained the following peak assignments: 13C NMR peak position, ppm structure 151.3, 151, 150, 149.9, 149.8, 149.3, 149.2 The fourth aromatic carbon is attached to the adamantane ring -100- 200406031 (94) 132-131, 128.5, 125.3, 125.2 129.6-129.1 123.7-122.9, 121.8, 121.1, 120.9 93.6 90.7, 90.3, 90.1, 89.7, 89.5, 89.4, 89.1, 88.8: 88.7 47.5, 46.7 47.1 41 39.6 ¥ 'Instruction sheet: Aromatic Carbon fourth aromatic ring carbon group carbon attached to acetylene carbon (disubstituted ring) fourth acetylene carbon
1戈金剛烷之C-H7 jT金剛烷之c-h3 金剛烷之c-h2 \^金剛烷之C-H3 金剛烷之第四碳 第三丁基之C-H 39.5, 39.2-39.0, 38.6, 38.2, 35 ~321 G-adamantane C-H7 jT-adamantane c-h3 Adamantane c-h2 , 35 ~ 32
GPC分析結果:GPC analysis results:
1,3,5,7-肆[3V4,-(苯基乙块基)苯基]金剛烷(顯示於圖沁) 具有尖峰分子量約763 ; -1,3/4-貳{ l',3',y -參[3W -(苯基乙炔基)苯基]金剛烷_7,_基} 苯(顯示於圖3F)具有尖峰分子量約133〇 ;1,3,5,7-[[3V4,-(phenylethylblock) phenyl] adamantane (shown in Tuqin) has a peak molecular weight of about 763; -1,3 / 4- 贰 {l ', 3 ', Y-ginseng [3W-(phenylethynyl) phenyl] adamantane_7, _yl} benzene (shown in Figure 3F) has a peak molecular weight of about 133〇;
-u-幻撕-π"”-參[3"V4,〃_(苯基乙块基)苯基]金剛燒 7〃-基]苯基} -5,7-貳(3〃"/4〃〃-(苯基乙炔基)苯基)金剛烷(顯 示於圖3F)具有尖峰分予量約1S20(肩)。 由GPC得知單體及小分子對寡聚物化合物之比為5〇±5%。 FTIR顯示下列: 尖峰,釐米、尖峰強~ 結構 3050 (弱) ^ Γ\^ί Γ\ f ?? \ — — 一_ 方香族 2930 (弱) 2200 (極弱) 1 /Γ A A f J.-C \ " ----- --—rm an ^ U-rl 乙---- 1600 (極強) 1500 i 強、 - _芳香族〇 = 〇 x \j\j j 1450(中等) ' ______ 1350(中寺) 製備例3-u-llusion tear-π " "-ref [3 " V4, 〃_ (phenylethyl block) phenyl] adamantine 7〃-yl] phenyl} -5,7- 贰 (3〃 " / 4〃〃- (phenylethynyl) phenyl) adamantane (shown in FIG. 3F) has a peak dose of about 1S20 (shoulder). The ratio of monomers and small molecules to oligomeric compounds is 5 by GPC. 〇 ± 5%。 FTIR shows the following: Spikes, cm, spikes strong ~ Structure 3050 (weak) ^ Γ \ ^ ί Γ \ f ?? \ — — _ Fangxiang family 2930 (weak) 2200 (very weak) 1 / Γ AA f J.-C \ " ----- --- rm an ^ U-rl B ---- 1600 (extremely strong) 1500 i strong,-_ aromatic 〇 = 〇x \ j \ jj 1450 (medium) '______ 1350 (nakaji) Preparation example 3
-101- 200406031 (95) 溶劑對1,3,5,7-肆[3',4'-(苯基乙炔基)苯基]金剛烷(顯示於 圖1D)對1,3/4-貳{Γ,3\5、參[3〃/4〃-(苯基乙炔基)苯基]金剛烷-7'-基}苯(顯示於圖1F),以及至少1,3-貳{ 374f-[l〃,3〃,5〃-參 [3,4…-(苯基乙炔基)苯基]金岡J烷-7"-基]苯基} -5,7-貳[3”74, (苯基乙炔基)苯基]金剛烷(顯示於圖1F)之比值之影響。-101- 200406031 (95) Solvent for 1,3,5,7- [3 ', 4'-(phenylethynyl) phenyl] adamantane (shown in Figure 1D) for 1,3 / 4- 贰{Γ, 3 \ 5, reference [3〃 / 4〃- (phenylethynyl) phenyl] adamantane-7'-yl} benzene (shown in Figure 1F), and at least 1,3- 贰 {374f- [l〃, 3〃, 5〃-ginseng [3,4…-(phenylethynyl) phenyl] Kanaoka Jane-7 " -yl] phenyl} -5,7-3 [3 ”74, ( The effect of the ratio of phenylethynyl) phenyl] adamantane (shown in Figure 1F).
850毫升P1步驟⑻產物平分為四等份,於石油醚、石油 英、庚烷及甲醇内進行沉澱。每份沉澱於2520毫升溶劑 ,經真空過濾(布克納漏斗直徑185毫米),過濾器上以150 毫升溶劑洗兩次,然後於約20°C於真空烘箱脫水2小時, 於40°C脫水隔夜以及於70-80°C脫水至恆重。 沉澱於烴類,結果獲得極為分散之淺嗶嘰色粉末可毫 無問題地乾燥。沉澱入曱醇獲得重質褐色粒狀固體(粒徑 約1毫米),於20°C乾燥時形成焦油。此種產物進一步經脫 水0850 ml of the product from step P1 was divided into four equal portions and precipitated in petroleum ether, petroleum spirit, heptane and methanol. Each precipitate was dissolved in 2520 ml of solvent, vacuum filtered (Burnner funnel diameter 185 mm), washed twice with 150 ml of solvent on the filter, and then dehydrated in a vacuum oven at about 20 ° C for 2 hours, and dehydrated at 40 ° C Dehydrate to constant weight overnight and at 70-80 ° C. Precipitation in hydrocarbons resulted in a very dispersed light serge-colored powder that could be dried without any problems. Precipitated into methanol to obtain a heavy brown granular solid (particle size of about 1 mm), which forms tar when dried at 20 ° C. This product is further dehydrated.
反應混合物於反應期間以及沉澱前藉GPC分析。全部濾 液及最終所得固體藉GPC分析,結果顯示於表7。表7中 ,PPT表示沉澱,單體為1,3,5,7-肆(374、溴苯基)金剛烷(顯 示於圖1A);二元體為1,3/4-貳[Γ,3',5、參(3〃/4〃-溴苯基)金剛 烷-7、基]苯(顯示於圖1C);以及三元體為1,3- K{3V4'-[1〃,3〃,5〃-參(3〃74'〃-溴苯基)金剛烷-7〃-基]苯基} -5,7-貳{ 3〃〃/4〃〃-溴苯基}金剛烷(顯示於圖1C)。 表7 沉澱前峰值比[單體比 (二元體+三元體)] 沉;殿溶劑 沉澱後峰值比[單體比 (二元體+三元體)] 75.0:25.0 石油酸 52.5:47.4 75.0:25.0 石油英 1 64.0:36.0 -102 - 200406031The reaction mixture was analyzed by GPC during the reaction and before precipitation. The whole filtrate and the final solid were analyzed by GPC. The results are shown in Table 7. In Table 7, PPT indicates precipitation, and the monomer is 1,3,5,7- (374, bromophenyl) adamantane (shown in Figure 1A); the binary is 1,3 / 4- 贰 [Γ, 3 ', 5, ginseng (3〃 / 4〃-bromophenyl) adamantane-7, yl] benzene (shown in Figure 1C); and the triad is 1,3-K {3V4'-[1〃, 3〃, 5〃-ginseng (3〃74'〃-bromophenyl) adamantane-7〃-yl] phenyl} -5,7- 贰 {3〃〃 / 4〃〃-bromophenyl} adamantane (Shown in Figure 1C). Table 7 Peak ratio before precipitation [monomer ratio (binary + ternary)] Shen; Dian solvent peak ratio after precipitation [monomer ratio (binary + ternary)] 75.0: 25.0 Petroleum acid 52.5: 47.4 75.0: 25.0 Petroleum 1 64.0: 36.0 -102-200406031
值比約為3:1。於烴沉澱濾液中耗損的產物大部分(>90%) 為單體,洗滌濾液時的耗損可忽略不計。甲醇沉澱濾液 中並無產物。沉澱後之單體對(二元體+三元體)比例增加 (1:1-^3:1) ^濾液之單體耗損減低(56—0%)順序:石油醚、石 油英、庚燒及甲醇。 製備例4 -熱固性成分之製備 製備例1產物混合物之1,3/4-貳{ Γ,3',5'·參[374〃-(苯基乙炔 基)苯基]金剛烷-7'-基}苯(顯示於圖1F)係使用製備性液相 層析術(PLC)分離。PLC類似前述HPLC方法,但使用較大管 柱來分離較大量混合物(由數克至數百克混合物)。 製備例5 -熱固性成分之製備 製備例1產物混合物之1,3-貳{ 374'- [ Γ,3〃,5〃-參[3'〃/4〃'-(苯基 乙炔基)苯基]金剛烷-7〃-基]苯基} -5,7-貳[3〃74〃〃-(苯基乙炔 基)苯基]金剛烷(顯示於圖1F)係使用製備性液相層析術 (PLC)分離。 製備例6 -熱固性成分之製備 式ΧΙΙΑ、ΧΙΙΒ、XIIC或XIID之雙金剛烷單體及式XIII、XV、 XXII及XXV雙金剛烷單體之寡聚物或聚合物係使用下述方 法製備。如圖2所示,雙金剛烷使用溴及路易士酸催化劑 轉成溴化雙金剛烷產物。然後溴化雙金剛烷產物與溴苯 於路易士酸催化劑存在下反應而生成溴苯化雙金剛烷。 然後溴苯化雙金剛烷係於用於所謂之索諾賈許拉偶合反 -103 - 200406031 (97) 發'明巍明續頁: 應使用之催化劑系統存在下,與端末炔反應。各步驟產 物係如發明人之審查中之專利申請案PCT/US01/22204,申請 日2001年10月17日所述接受後敘處理。 製備例7 -熱固性成分⑷之製備The value ratio is approximately 3: 1. Most of the products lost in the hydrocarbon precipitation filtrate (> 90%) are monomers, and the loss in washing the filtrate is negligible. There was no product in the methanol precipitation filtrate. Increased ratio of monomer to (binary + ternary) after precipitation (1: 1- ^ 3: 1) ^ monomer consumption of filtrate is reduced (56-0%) sequence: petroleum ether, petroleum spirit, heptane And methanol. Preparation Example 4-Preparation of Thermosetting Ingredients Preparation Example 1, Product Mix of 1,3 / 4- 贰 {Γ, 3 ', 5' · Ref [374〃- (phenylethynyl) phenyl] adamantane-7'- Benzene (shown in Figure 1F) was separated using preparative liquid chromatography (PLC). PLC is similar to the aforementioned HPLC method, but uses larger columns to separate larger amounts of the mixture (from several grams to several hundred grams of the mixture). Preparation Example 5-Preparation of Thermosetting Ingredients Preparation Example 1 Product mixture of 1,3- 贰 {374'- [Γ, 3〃, 5〃-ginseng [3'〃 / 4〃 '-(phenylethynyl) phenyl ] Adamantane-7〃-yl] phenyl} -5,7- 贰 [3〃74〃〃- (phenylethynyl) phenyl] adamantane (shown in Figure 1F) uses preparative liquid chromatography (PLC) separation. Preparation Example 6-Preparation of a thermosetting component An oligomer or polymer of a bisadamantane monomer of the formula XIIA, XIIB, XIIC or XIID and a bisadamantane monomer of the formulae XIII, XV, XXII and XXV was prepared by the following method. As shown in Figure 2, bisadamantane is converted to brominated bisadamantane using a bromine and Lewis acid catalyst. The brominated bisdamantane product is then reacted with bromobenzene in the presence of a Lewis acid catalyst to form brominated bisdamantane. Then brominated bisdamantane is used in the so-called Sonojashula coupling reaction -103-200406031 (97) issued 'Ming Weiming Continued: The catalyst system to be used is reacted with terminal alkyne. The product of each step is as described in the patent application PCT / US01 / 22204 under examination by the inventor, and the application date is October 17, 2001. Preparation Example 7-Preparation of Thermosetting Ingredient ⑷
式XIIA、XIIB、XIIC或XIID之雙金剛烷單體及式XIII、XVI、 XXII及XXV雙金剛烷單體之寡聚物或聚合物係使用下述方 法製備。如圖1A至1F所示,雙金剛烷係使用製備例1及2 所述之類似合成程序而被轉成雙金剛燒溴苯化組合物。 圖1A至1C中,雙金剛烷係與鹵苯基化合物,於製備例1及 2所述之路易士酸催化劑存在下,及/或製備例2所述第二 催化劑成分存在下反應。反應混合物經後敘處理後獲得單 體、二元體、三元體及高碳寡聚物之混合物。圖1D至1F中 ,溴苯化雙金剛烷混合物隨後與端末炔,於催化劑存在 下反應而製造本發明之經以決取代之雙金剛垸組合物。 發明實施例1 -包含苊與異戊酸乙烯酯之共聚物之成孔劑 之製備: 一種包含苊與異戊酸乙婦酯之共聚物之成孔劑製備如 後。於裝配有磁攪拌器之250毫升燒瓶内加入20克技術級 苊(75%純度-相當於0.986莫耳純苊),3.1579克(0.0246莫耳)異 戊酸乙晞酯,0.5673克(2.464毫莫耳)偶氮二羧酸二第三丁 酯及95毫升二甲苯類。混合物於室溫攪拌1〇分鐘至獲得 均質溶液。然後反應溶液於減壓下除氣5分鐘及使用氮氣 掃除。此項處理重複三次。然後反應混合物於氮下加熱 至140°C經6小時時間。溶液冷卻至室溫,逐滴添加至237 -104- 200406031 (98) 發、明說明績頁: 毫升乙醇。混合物又於室溫維持攪拌20分鐘。生成之沉 澱藉過濾收集及真空脫水。所得共聚物性質列舉如上表5 之共聚物18。其它包含宽與異戊酸乙婦酯之共聚物之成 孔劑係以類似方式製備,但變更使用之共聚單體百分比 、使用之引發劑類型及百分比、以及反應時間及溫度, 列舉如上表5。 發明實施例2 -包含苊輿丙烯酸第三丁酯之共聚物之成孔 劑之製備: 丨 一種包含苊與丙晞酸第三丁酯之共聚物之成孔劑製備 如後。於裝配有磁攪拌器之250毫升燒瓶内加入20克技術 級苊(75%純度-相當於0.0986莫耳純苊),2.5263克(0.01971莫 耳)丙烯酸第三丁酯,0.3884克(2.365毫莫耳)2,2'-偶氮貳異 丁腈及92毫升二曱苯類。混合物於室溫攪拌10分鐘至獲 得均質溶液。然後反應溶液於減壓下除氣5分鐘及使用氮 氣掃除。此項處理重複三次。然後反應混合物於氮下加 熱至70°C經24小時時間。溶液冷卻至室溫,逐滴添加至 230毫升乙醇。混合物又於室溫維持攪拌20分鐘。生成之 沉澱藉過濾收集及真空脫水。所得共聚物性質列舉如上 表5之共聚物2。其它包含苊與丙晞酸第三丁酯之共聚物 之成孔劑係以類似方式製備,但變更使用之共聚單體百 分比、使用之引發劑類型及百分比、以及反應時間及溫 度,列舉如上表5。 發明實施例3 -包含苊輿乙酸乙烯酯之共聚物之成孔劑之 製備: -105 - 200406031 (99) 奋明說明績頁Oligomers or polymers of bisadamantane monomers of formula XIIA, XIIB, XIIC or XIID and bisadamantane monomers of formula XIII, XVI, XXII and XXV are prepared by the following method. As shown in FIGS. 1A to 1F, the bis-adamantane system was converted to a bis-adamant brominated benzoylation composition using a similar synthetic procedure described in Preparation Examples 1 and 2. In FIGS. 1A to 1C, a bisdamantane-based compound and a halophenyl compound are reacted in the presence of a Lewis acid catalyst described in Preparation Examples 1 and 2 and / or in the presence of a second catalyst component described in Preparation Example 2. The reaction mixture is subjected to post-treatment to obtain a mixture of monomers, binary, ternary and high-carbon oligomers. In Figs. 1D to 1F, a brominated bisdamantane mixture is then reacted with terminal alkynes in the presence of a catalyst to produce the depleted bisdamantane composition of the present invention. Invention Example 1-Preparation of a pore former comprising a copolymer of rhenium and vinyl isovalerate: A pore former comprising a copolymer of rhenium and ethyl isovalerate was prepared as follows. In a 250 ml flask equipped with a magnetic stirrer, add 20 grams of technical grade rhenium (75% purity-equivalent to 0.986 mol pure erbium), 3.1579 g (0.0246 mol) of ethyl ethyl isovalerate, 0.5673 g (2.464 mmol) Mol) Di-tert-butyl azodicarboxylate and 95 ml of xylenes. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes and purged with nitrogen. This process was repeated three times. The reaction mixture was then heated to 140 ° C under nitrogen for a period of 6 hours. The solution was cooled to room temperature and added dropwise to 237 -104- 200406031 (98). The mixture was stirred at room temperature for another 20 minutes. The resulting precipitate was collected by filtration and vacuum dehydrated. The properties of the obtained copolymer are listed in copolymer 18 in Table 5 above. Other porogens containing copolymers of acetoisovalerate were prepared in a similar manner, but the percentage of comonomer used, type and percentage of initiator used, and reaction time and temperature were changed, as listed in Table 5 above. . Inventive Example 2-Preparation of a pore-forming agent comprising a copolymer of tert-butyl acrylate: 丨 A pore-forming agent comprising a copolymer of terbium and tert-butyl propionate was prepared as follows. In a 250 ml flask equipped with a magnetic stirrer, add 20 grams of technical grade rhenium (75% purity-equivalent to 0.0986 mol pure rhenium), 2.5263 g (0.01971 mol) of third butyl acrylate, 0.3884 g (2.365 mmol) Ear) 2,2'-Azo-isobutyronitrile and 92 ml of dibenzobenzene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes and purged with nitrogen. This process was repeated three times. The reaction mixture was then heated to 70 ° C under nitrogen for a period of 24 hours. The solution was cooled to room temperature and added dropwise to 230 ml of ethanol. The mixture was stirred at room temperature for another 20 minutes. The resulting precipitate was collected by filtration and dehydrated in vacuo. The properties of the obtained copolymer are listed in Copolymer 2 in Table 5 above. Other porogens containing copolymers of osmium and tert-butyl propionate were prepared in a similar manner, but the percentage of comonomer used, type and percentage of initiator used, and reaction time and temperature were changed, as listed in the table above. 5. Invention Example 3-Pore-forming Agent Containing Copolymer of Acetyl Vinyl Acetate
一種包含苊與乙酸乙烯酯之共聚物之成孔劑製備如後 。於裝配有磁攪拌器之250毫升燒瓶内加入20克技術級苊 (75%純度-相當於0.986莫耳純苊),1.6969克(0.01971莫耳)乙 酸乙晞g旨,0.3884克(2.365毫莫耳)2,2^偶氮貳異丁腈及88毫 升二甲苯類。混合物於室溫攪拌10分鐘至獲得均質溶液 。然後反應溶液於減壓下除氣5分鐘及使用氮氣掃除。此 項處理重複三次。然後反應混合物於氮下加熱至70°C經24 小時時間。溶液冷卻至室溫,逐滴添加至220毫升乙醇。 混合物又於室溫維持攪拌20分鐘。生成之沉澱藉過濾收 集及真空脫水。所得共聚物性質列舉如上表5之共聚物18 。以類似方式但變更使用之共聚單體百分比製備另一種 包含苊與乙酸乙烯酯之共聚物之成孔劑;所得共聚物性 質列舉於上表5共聚物19。 發明實施例4-包含聚荒均聚物之成孔劑之製備:A porogen comprising a copolymer of rhenium and vinyl acetate was prepared as follows. In a 250 ml flask equipped with a magnetic stirrer, add 20 grams of technical grade osmium (75% purity-equivalent to 0.986 mol pure osmium), 1.6969 g (0.01971 mol) of ethyl acetate, 0.3884 g (2.365 mmol) Ear) 2,2 ^ Azoisobutyronitrile and 88 ml of xylenes. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes and purged with nitrogen. This process is repeated three times. The reaction mixture was then heated to 70 ° C under nitrogen for a period of 24 hours. The solution was cooled to room temperature and added dropwise to 220 ml of ethanol. The mixture was stirred at room temperature for another 20 minutes. The resulting precipitate was collected by filtration and vacuum dehydrated. The properties of the obtained copolymer are listed in copolymer 18 in Table 5 above. A similar pore-forming agent comprising a copolymer of fluorene and vinyl acetate was prepared in a similar manner but changing the percentage of comonomers used; the properties of the resulting copolymers are listed in Copolymer 19 in Table 5 above. Invention Example 4-Preparation of Pore Forming Agent Containing Poly-Homopolymer:
苊聚合物製備如後。裝配有磁攪拌器之250毫升燒瓶内 加入30克技術級苊(75%純度-相當於0.148莫耳純苊),0.3404 克偶氮二羧酸二第三丁酯(1.478毫莫耳),及121毫升二甲 苯類。混合物於室溫攪拌10分鐘至獲得均質溶液。然後 反應溶液於減壓下除氣5分鐘,且以氮氣掃除。此項處理 重複三次。然後反應混合物於氮下加熱至140°C經6小時時 間。溶液冷卻至室溫,逐滴添加至303毫升乙醇。混合物_ 又於室溫持續攪拌20分鐘。生成之沉澱藉過濾收集及真 空脫水。所得均聚物性質列舉於下表8之均聚物1,此處 DBADC表示偶氮二羧酸二第三丁酯,以及PDI表示多分散 -106- 200406031 (100) 性指數(Mw/Mn)。其它包含聚苊均聚物之成孔劑係以類似 方式製備,但變更使用之引發劑類型及百分比以及反應 時間及溫度如下表8所示,此處AIBN表示2,2'-偶氮貳異丁 腈0 表8 均聚物 引發劑類型 引發劑% 溶劑 溫度(°C) 時間(小時) Μη Mw PDI 1 DBADC 1% 二甲苯 140 6 3260 14469 4.44 2 DBADC 2% 二甲苯 140 6 2712 11299 4.17 3 DBADC 3% 二甲苯 140 6 3764 14221 3.78 4 DBADC 4% 二甲苯 140 6 3283 8411 2.56 5 DBADC 6% 二甲苯 140 6 2541 7559 2.97 6 . DBADC 8% 二甲苯 140 6 2260 6826 3.02 7 DBADC 12% 二甲苯 140 6 2049 5805 2.83 8 DBADC 16% 二甲苯 140 6 2082 5309 2.55 9 DBADC 20% 二甲苯 140 6 1772 4619 2.61 10 DBADC 30% 二曱苯 140 6 1761 3664 2.08 11 AIBN 2% 二甲苯 70 24 3404 7193 2.11 12 AIBN 2% 二甲苯 70 24 3109 6141 1.98 13 AIBN 2% 二甲苯 70 24 3500 7295 2.08 14 AIBN 2% 二曱苯 70 24 3689 6165 1.67The rhenium polymer is prepared as follows. A 250 ml flask equipped with a magnetic stirrer was charged with 30 g of technical grade rhenium (75% purity-equivalent to 0.148 mol pure rhenium), 0.3404 g of di-tert-butyl azodicarboxylate (1.478 mmol), and 121 ml of xylenes. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes and purged with nitrogen. This process is repeated three times. The reaction mixture was then heated to 140 ° C under nitrogen for 6 hours. The solution was cooled to room temperature and added dropwise to 303 ml of ethanol. Mixture_ Stir for another 20 minutes at room temperature. The resulting precipitate was collected by filtration and vacuum dehydrated. The properties of the obtained homopolymer are listed in homopolymer 1 in Table 8 below, where DBADC stands for di-tert-butyl azodicarboxylic acid and PDI stands for polydispersity -106- 200406031 (100) property index (Mw / Mn) . Other porogens containing polyfluorene homopolymers are prepared in a similar manner, but the types and percentages of the initiators used, as well as the reaction time and temperature are shown in Table 8, where AIBN stands for 2,2'-azopyrazine Nitrile 0 Table 8 Homopolymer initiator type Initiator% Solvent temperature (° C) Time (hours) Mη Mw PDI 1 DBADC 1% xylene 140 6 3260 14469 4.44 2 DBADC 2% xylene 140 6 2712 11299 4.17 3 DBADC 3% xylene 140 6 3764 14221 3.78 4 DBADC 4% xylene 140 6 3283 8411 2.56 5 DBADC 6% xylene 140 6 2541 7559 2.97 6. DBADC 8% xylene 140 6 2260 6826 3.02 7 DBADC 12% xylene 140 6 2049 5805 2.83 8 DBADC 16% xylene 140 6 2082 5309 2.55 9 DBADC 20% xylene 140 6 1772 4619 2.61 10 DBADC 30% xylene 140 6 1761 3664 2.08 11 AIBN 2% xylene 70 24 3404 7193 2.11 12 AIBN 2% xylene 70 24 3109 6141 1.98 13 AIBN 2% xylene 70 24 3500 7295 2.08 14 AIBN 2% xylene 70 24 3689 6165 1.67
發明實施例5 -包含聚苊均聚物、熱固性成分及聚甲醯矽 烷之組合物之製備以及發明實施例6 -包含聚荒均聚物及 熱固々生成分之組合物之製備 用於發明實施例5,市售聚苊均聚物(25克)作為成孔劑 ,聚甲醯矽烷(CH2SiH2)q,此處q為20-30 ( 1.57克)(星火系統公 司供應)作為黏著促進劑以及二甲苯(334克)稱量入塑膠瓶 内。攪棒加至瓶中。將瓶緊密密封且開始攪拌。溶液於 室溫攪拌24小時。溶液倒入帶有攪棒且經預先稱重之二 頸瓶内,瓶内含有類似前述製備例1或2之熱固性成分 (22.43克)。瓶以二甲苯(約111克)洗滌,所得二甲苯溶液添 -107- 200406031 (101) 加至二頸瓶,至反應混合物總重達500克 冷凝器且打開水源。 系統由冷凝器頂部(進氣口)至側頸(d (強氣流)沖洗30分鐘。冷凝器頂部之氮 進氣口 -出氣口 ,側頸以塞子封閉。持續 。燒瓶下降至油浴(預熱至145°C且恆常J 覆蓋整個反應瓶。攪棒於反應瓶内攪動 沸騰且讓其回流15.5小時。然後中止加熱 油浴中取出,讓燒瓶冷卻至室溫。使用 且開始與環己酮進行溶劑交換。 大部分二甲苯係藉旋轉蒸發器去除至 止。剩餘反應混合物重約60至90克。然: 加至燒瓶。再度藉旋轉蒸發器去除大部 得黏稠液體。剩餘反應混合物重約60至 又重複二次俾確保全部二甲苯皆交換成 液以環己酮稀釋成20%固體濃度溶液。溶 少於20磅緩慢通過0.1微米鐵氟龍過濾器 步驟。終組合物為20%固體,帶有6.7%重 ,50%重量比聚苊均聚物,差額為熱固性 至於發明實施例6,係重複發明實施P 著促進劑,故組合物為50%重量比聚苊均 為熱固性成分。 發明實施例7-10-包含聚荒均聚物、熱固 矽烷之組合物之製備 發明誕'明續頁: 。燒瓶夾緊至水 1氣口)使用氮氣 氣進氣口更換為 倒入微弱氮氣流 I於攪拌之下)而 ,反應混合物經 與攪拌。燒瓶由 磁桿移出攪棒, 獲得黏稠液體為 陵500克環己酮添 分二甲苯直到獲 90克。此項處理 環己酮。然後溶 液係以每平方吋 過滤。重複先前 量比聚甲醯矽烷 成分。 | 5,但未添加黏 聚物,以及差額 性成分及聚甲醯 -108 - 200406031 (102) 發明說明績頁 對發明實施例7,重複發明實施例5,但聚甲醯矽烷 (CH2SiH2)q,此處q為20-30 (星火系統公司供應)用量為2.68克 。終組合物為20%固體,含12重量百分比聚曱醯矽烷,50 重量百分比聚苊均聚物,以及差額為熱固性成分。至於 發明實施例8-10,重複發明實施例7,但聚苊均聚物之重 量百分比變化如下表9所示。 表9 發明實施例 聚苊均聚物重量百分比1 8 — "1 9 20 1 . 10 1〇 1 發明實施例11-17 —包含聚苊均聚物、熱固性成分及聚甲 醯矽烷之組合物之製備 重複發明實施例5,但聚甲醯矽烷(CH2SiH2)q,此處q為20-30 (星火系統公司供應)用量為1.92克。聚苊均聚物用量改 變成如下表10所示。 表10 I 發明實施例 聚荒均聚物重量百分比 11 28 12 26.8 13 27.2 14 26.5 15 25.4 16 38.3 17 30.1 發明實施例18-21 —包含聚荒均聚物、熱固性成分及聚甲 醯矽烷之組合物之製備 重複發明實施例7,但聚苊均聚物用量為25重量%,以 及使用之聚苊均聚物類別示於下表11。 200406031 (103) 發曰为說明績頁 表11 發明實施例 聚苊均聚物 18 表4均聚物1 19 表4均聚物2 20 表4均聚物3 21 表5均聚物4 發明實施例22-23 -包含聚荒均聚物、熱固性成分及鄭甲酚 齡^越清漆樹月旨之攙合物之製備Inventive Example 5-Preparation of a composition comprising a polyfluorene homopolymer, a thermosetting component and a polymethylsilane, and Inventive Example 6-Preparation of a composition comprising a polyfluorene homopolymer and a thermosetting fluorene component for use in the invention Example 5: A commercially available polyfluorene homopolymer (25 g) was used as a pore-forming agent, and polymethysilane (CH2SiH2) q, where q is 20-30 (1.57 g) (supplied by Spark Systems) as an adhesion promoter And xylene (334 grams) was weighed into a plastic bottle. Add the stir bar to the bottle. Seal the bottle tightly and start stirring. The solution was stirred at room temperature for 24 hours. The solution was poured into a pre-weighed two-necked flask with a stir bar, which contained a thermosetting component (22.43 g) similar to that of Preparation Example 1 or 2 described above. The bottle was washed with xylene (approximately 111 grams), and the resulting xylene solution was added to a two-necked flask with -107- 200406031 (101) until the total weight of the reaction mixture reached 500 grams. The condenser was opened and the water source was turned on. The system is flushed from the top of the condenser (inlet) to the side neck (d (strong air flow)) for 30 minutes. The nitrogen inlet-air outlet at the top of the condenser, the side neck is closed with a plug. Continue. The flask is lowered to the oil bath (pre Heat to 145 ° C and cover the entire reaction flask with constant J. Stir bar in the reaction flask to boil and allow it to reflux for 15.5 hours. Then stop heating oil bath and allow the flask to cool to room temperature. Use and start with cyclohexane Ketones are solvent exchanged. Most of the xylenes are removed to the end by a rotary evaporator. The remaining reaction mixture weighs about 60 to 90 grams. However: Add to a flask. Remove most of the viscous liquid again by a rotary evaporator. The remaining reaction mixture is heavy. Repeat about 60 to two more times to ensure that all xylenes are exchanged into liquid and diluted with cyclohexanone to a 20% solids solution. Dissolve less than 20 pounds and slowly pass through the 0.1 micron Teflon filter step. The final composition is 20% Solid, with 6.7% weight, 50% by weight polyfluorene homopolymer, the difference is thermosetting. As for Invention Example 6, the invention is repeated to implement P adhesion promoter, so the composition is 50% by weight. Polyfluorene is a thermosetting component. . hair Exemplary Example 7-10-Preparation of Composition Containing Polyurethane Homopolymer and Thermosetting Silane Continued: .The flask is clamped to the water port 1) Use the nitrogen gas inlet to replace with weak nitrogen Flow I was stirred) and the reaction mixture was stirred. The flask was removed from the stir bar by a magnetic rod, and a viscous liquid was obtained. 500 g of cyclohexanone was added to xylene until 90 g was obtained. This treatment is cyclohexanone. The solution was then filtered per square inch. Repeat the previous volume ratio polymethylsilane component. | 5, but without the addition of a cohesive polymer, as well as the difference component and polyformamidine-108-200406031 (102) Summary of the Invention For the seventh embodiment of the invention, the fifth embodiment of the invention is repeated, but the polymethysilane (CH2SiH2) q , Where q is 20-30 (supplied by Spark Systems) and the amount is 2.68 grams. The final composition was 20% solids, containing 12 weight percent polyfluorene silane, 50 weight percent polyfluorene homopolymer, and the balance was a thermosetting component. As for the inventive examples 8 to 10, the inventive example 7 was repeated, but the weight percentage change of the polyfluorene homopolymer is shown in Table 9 below. Table 9 Weight percentage of polyfluorene homopolymer in inventive examples 1 8 — " 1 9 20 1.. 10 1101 Inventive examples 11-17—compositions containing polyfluorene homopolymer, thermosetting ingredients and polymethylsilane The preparation was repeated for Inventive Example 5 except that polymethanesilane (CH2SiH2) q, where q is 20-30 (supplied by Spark Systems) and the amount was 1.92 g. The amount of polyfluorene homopolymer was changed as shown in Table 10 below. Table 10 I Weight percentage of polymer homopolymers in invention examples 11 28 12 26.8 13 27.2 14 26.5 15 25.4 16 38.3 17 30.1 Invention examples 18-21-Combinations of polymer homopolymers, thermosetting ingredients, and polymethylsilane Inventive Example 7 was repeated, but the amount of polyfluorene homopolymer was 25% by weight, and the type of polyfluorene homopolymer used is shown in Table 11 below. 200406031 (103) Illustrated performance page Table 11 Invention Examples Polyfluorene Homopolymer 18 Table 4 Homopolymer 1 19 Table 4 Homopolymer 2 20 Table 4 Homopolymer 3 21 Table 5 Homopolymer 4 Invention Implementation Example 22-23-Preparation of admixture containing poly-a homopolymer, thermosetting ingredients, and cresol
至於發明實施例22,於裝配有磁攪棒之65毫升塑膠瓶 内力口入類似前述製備例1或2之熱固性成分(4.17克),力口入 鄰甲酚酚醛清漆樹脂(0.125克)作為黏著促進劑,聚苊 (1.074克)作為成孔劑,以及環己酮(24.46克)。混合物於室 溫攪拌2小時,生成之均質溶液經0.1微米鐵氟龍過濾器 過濾。至於發明實施例23,重複發明實施例22,但使用6 重量百分比鄰甲酚酚醛清漆樹脂。 發明實施例24-30-包含聚荒共聚物、熱固性成分及聚甲醯 矽烷之組合物之製備 至於發明實施例24,聚苊共聚物(4.48克;表2共聚物13) 作為成孔劑,聚甲醯矽烷(CH2SiH2)q,此處q為20-30 (0.48克) 作為黏著促進劑以及二甲苯類(59.4克)添加至裝配有磁攪 棒之塑膠瓶内。溶液於室溫攪拌24小時。然後溶液移至 100毫升三頸瓶。加入類似前述製備例1或2之熱固性成分 (4.00克),又加入19.8克二甲苯。溶液以氮氣沖洗5分鐘, 於145°C加熱15.5小時。然後藉旋轉蒸發器去除大部分二甲 苯至獲得黏稠液體。剩餘反應混合物重約10至12克。然 後添加100克環己酮至燒瓶。然後藉旋轉蒸發器去除大部 -110 - 200406031 (104) 奋确読明績頁:As for Inventive Example 22, a 65 ml plastic bottle equipped with a magnetic stirrer was filled with a thermosetting component (4.17 g) similar to the preparation example 1 or 2 above, and o-cresol novolac resin (0.125 g) was filled as a stick Accelerator, polyfluorene (1.074 g) as a pore former, and cyclohexanone (24.46 g). The mixture was stirred at room temperature for 2 hours, and the resulting homogeneous solution was filtered through a 0.1 micron Teflon filter. As for Inventive Example 23, Inventive Example 22 was repeated, but 6 weight percent of o-cresol novolac resin was used. Inventive Examples 24-30—Preparation of Compositions Containing Polyurethane Copolymer, Thermosetting Ingredients and Polymethane Silane As for Inventive Example 24, polyfluorene copolymer (4.48 g; copolymer of Table 2) as a pore former, Polymethysilane (CH2SiH2) q, where q is 20-30 (0.48g), is added as an adhesion promoter and xylenes (59.4g) to a plastic bottle equipped with a magnetic stirrer. The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 100 ml three-necked flask. A thermosetting component (4.00 g) similar to the aforementioned Preparation Example 1 or 2 was added, and 19.8 g of xylene was added. The solution was flushed with nitrogen for 5 minutes and heated at 145 ° C for 15.5 hours. Most of the xylene was then removed by a rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture weighed about 10 to 12 grams. Then 100 grams of cyclohexanone was added to the flask. Then use a rotary evaporator to remove most of -110-200406031 (104)
分溶劑至獲得黏稠液體。其餘反應混合物重約10至12克 。又重複此項處理兩次,俾確保全部二甲苯皆已交換成 環己酮。然後溶液以環己酮稀釋獲得18°/。固體濃度溶液。 溶液以低於20磅/平方吋壓力緩慢通過0.1微米鐵氟龍過濾 器過濾。重複先前步驟。終組合物為18%固體濃度,帶有 12%重量比聚甲醯矽烷,50%重量比聚苊共聚物及差額為 熱固性成分。 至於發明實施例25至30,重複發明實施例24,但使用之 孔劑係如下表12。 表12 發明實施例 表2共聚物 24 7 25 11 26 9 27 6 28 4 29 3 30 1Partition the solvent to obtain a viscous liquid. The remaining reaction mixture weighed about 10 to 12 grams. This process was repeated two more times to ensure that all xylenes had been exchanged for cyclohexanone. The solution was then diluted with cyclohexanone to obtain 18 ° /. Solid concentration solution. The solution was slowly filtered through a 0.1 micron Teflon filter at a pressure of less than 20 psi. Repeat the previous steps. The final composition is 18% solids with 12% by weight polymethysilane and 50% by weight polyfluorene copolymer. The balance is thermosetting. As for the inventive examples 25 to 30, the inventive example 24 was repeated, but the porogen used was as shown in Table 12 below. Table 12 Examples of the invention Table 2 Copolymers 24 7 25 11 26 9 27 6 28 4 29 3 30 1
發明實施例31-32-包含聚己内酯、熱固性成分及聚甲醯矽 烷之組合物之製備 至於發明實施例31,使用之溶劑為二甲苯。聚己内酯 (4.48克)作為成孔劑,聚甲醯矽烷(CH2SiH2)q,此處q為20-30 (0.48克)作為黏著促進劑以及二甲苯類(59.4克)添加至裝配 有磁攪棒之塑膠瓶内。溶液於室溫攪掉24小時。然後溶 液移至250毫升三頸瓶。加入類似前述製備例1或2之熱固 性成分(4.00克),以及加入額外量19.8克二甲苯。溶液以 氮氣沖洗5分鐘,及於145°C加熱15.5小時。溶液以低於20 磅/平方吋壓力緩慢通過0.1微米鐵氟龍過濾器過濾。重複 -111 - 200406031 (105) 奋明i::#續頁:: 先前步驟。終組合物為10%固體濃度,帶有12%重量比聚 甲醯矽烷,50%重量比聚己内酯以及差額為熱固性成分。 至於發明實施例32,使用之溶劑為環己酮。聚己内酯Inventive Examples 31-32-Preparation of Compositions Containing Polycaprolactone, Thermosetting Ingredients and Polymethanesilane As for Inventive Example 31, the solvent used was xylene. Polycaprolactone (4.48 g) was used as a pore-forming agent, polymethysilane (CH2SiH2) q, where q is 20-30 (0.48 g) as an adhesion promoter and xylenes (59.4 g) were added to the assembly with Inside the plastic bottle of the stir bar. The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250 ml three-necked flask. A thermosetting ingredient (4.00 g) similar to the aforementioned Preparation Example 1 or 2 was added, and an additional amount of 19.8 g of xylene was added. The solution was flushed with nitrogen for 5 minutes and heated at 145 ° C for 15.5 hours. The solution was slowly filtered through a 0.1 micron Teflon filter at a pressure of less than 20 psi. Repeat -111-200406031 (105) Fenming i :: # Continued :: Previous steps. The final composition was 10% solids, with 12% by weight polymethylsilane, 50% by weight polycaprolactone, and the balance was a thermosetting component. As for Inventive Example 32, the solvent used was cyclohexanone. Polycaprolactone
(4.48克)作為成孔劑,聚甲醯矽烷(CH2SiH2)q,此處q為20-30 (0.48克)以及二甲苯類(59.4克)添加至裝配有磁攪棒之塑膠 瓶内。溶液於室溫攪拌24小時。然後溶液移至250毫升三 頸瓶。加入類似前述製備例1或2之熱固性成分(4.00克),(4.48 g) As a pore-forming agent, polymethysilane (CH2SiH2) q, where q is 20-30 (0.48 g) and xylenes (59.4 g) were added to a plastic bottle equipped with a magnetic stirrer. The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250 ml three-necked flask. Adding a thermosetting component (4.00 g) similar to the aforementioned Preparation Example 1 or 2,
以及加入額外量19.8克二甲苯。溶液以氮氣沖洗5分鐘, 及於145°C加熱15.5小時。然後藉旋轉蒸發器去除大部分二 甲苯至獲得黏稠液體。剩餘反應混合物重約10至12克。 然後100克環己酮添加至燒瓶。再度藉旋轉蒸發器去除大 部分溶劑直到獲得黏稠液體。剩餘反應混合物重約10至 12克。此項處理又重複兩次俾確保全部二甲苯皆交換成 環己酮。然後溶液以環己酮稀釋而獲得18%固體濃度溶液 。溶液以低於20磅/平方吋壓力緩慢通過0.1微米鐵氟龍過 濾器過濾。重複先前步驟。終組合物為18%固體濃度,帶 有12%重量比聚甲醯矽烷,50%重量比聚己内酯以及差額 為熱固性成分。 發明實施例33-35 —包含聚己内醋、熱固性成分及鄰甲酚 酚醛清漆樹脂之攙合物之組合物之製備 類似前述製備例1或2之熱固性成分(4.00克),鄰曱酚酚 醛清漆樹脂(0.12克;分子量1760 ;史耐特迪國際公司供應) 作為黏著促進劑,聚己内酯(2.53克)作為成孔劑,以及 37.66克環己酮添加至裝配有磁攪棒之塑膠瓶内。溶液於 -112 - 200406031 (106) 蚕明諸:明績頁: 室溫攪拌2小時。溶液於低於20磅/平方吋壓力緩慢通過 0.1微米鐵氟龍過濾器過濾。重複先前步驟。終組合物為 15%固體,相對於熱固性成分帶有3重量%鄰甲酚酚醛清 漆樹脂,相對於總固體帶有35重量%聚己内酯,以及差 額為熱固性成分。 重複如下表13所示。 表13 發明實施例 鄰甲酚酚醛清漆樹脂重量百分比 33 3.4 34 6.9 . 35 12.2 發明實施例36-37 —包含聚苊均聚物以及聚己内酷、熱固 性成分及聚甲醯矽烷之攙合物之組合物之製備 至於發明實施例36,使用之溶劑為二甲苯。聚己内酯 (4.48克),以及市售聚苊均聚物(0.7906克)作為成孔劑攙合 物,聚甲醯矽烷(CH2SiH2)q,此處q為20-30(0.48克)(星火系統 公司供應)作為黏著促進劑以及二曱苯類(64.74克)添加至 裝配有磁攪棒之塑膠瓶内。溶液於室溫攪拌24小時。然 後將溶液移至250毫升三頸瓶。加入類似前述製備例1或2 之熱固性成分(4.00克),及額外量二甲苯(21.58克)。溶液 使用氮氣沖洗5分鐘,及於145°C加熱15.5小時。溶液以低 於20磅/平方吋壓力緩慢通過0.1微米鐵氟龍過濾器過濾。 重複先前步驟。終組合物為16.5%固體,相對於熱固性成 分帶有12重量百分比聚甲醯矽烷,相對於熱固性成分重 量,帶有15重量百分比聚苊,以及差額為熱固性成分。 至於發明實施例37,使用之溶劑為環己酮。聚己内酯 200406031 (107) 發响兢明績頁: S , Λ·^ <Α V' ^ * "* * ' 一 (4.48克),以及市售聚宠均聚物(〇.79〇6克)作為成孔劑攙合 物,聚甲醯矽烷(CftSiFUq,此處^為2〇-3〇 (〇.48克)(星火系統 公司供應)作為黏著促進劑以及二甲苯類(6 4.74克)添加至 裝配有磁攪棒之塑膠瓶内。落液於室溫攪拌24小時。然 後將溶液移至250毫升三頸瓶。加入類似前述製備例1或2 之熱固性成分(4.00克)’及額外量21.58克二甲苯。溶液使 用氮氣沖洗5分鐘’及於145 C加熱15.5小時。然後藉旋轉 蒸發器去除大部分二甲苯直到獲得黏稠液體。剩餘反應 混合物重約10至12克。然後添加i〇Q克環已酮至燒瓶。再 度藉旋轉咨發器去除大邵分溶劑直到獲得黏稠液體。剩 餘反應混合物重約10至12克。此項處理又重複兩次俾確 保全邵一甲苯皆父換成環己酮。然後溶液以環己酮稀釋 而獲得18%固體濃度溶液。溶液於低於2〇磅/平方吋緩慢 通過0.1微米鐵氟龍過濾器過濾。重複先前步驟。 施例38-41 —包物以及聚己内酯、埶呵 佳成义~基聚甲酿石夕_ 元之換合物之組合物之製備 至於發明實施例38及40,重複發明實施例37,但聚甲醯 矽烷用量變更為如表14所示。至於發明實施例39及41, 重複發明實施例36,但聚曱醯矽烷用量變更為如表14所 示。表14中PAN表示聚苊均聚物,PCL表示聚己内酯以及 PCS表示聚甲醯矽烷。 表14 P發明q 貫施例 38 % PAN於成孔劑 攙合物 % PCL於成孔劑 攙合物 %PCS 溶劑|| 15 50 6.7 環己酮 39 15 50 ~6J 二甲苯 -114- 200406031 發明說衲績頁' (108) 40 15 50 3 環己酮 41 15 50 3 二甲苯 發明實施例42 —發明實施例5之薄膜之製備 發明實施例5組合物使用熟諳技藝人士已知之典型塗覆 條件施用至基板。結果所得旋塗組合物於氮(< 50 ppm氧) 下於下列溫度烤乾:125°C、250°C及300°C。爐硬化條件為And an additional amount of 19.8 grams of xylene was added. The solution was flushed with nitrogen for 5 minutes and heated at 145 ° C for 15.5 hours. Most of the xylene was then removed by a rotary evaporator to obtain a viscous liquid. The remaining reaction mixture weighed about 10 to 12 grams. Then 100 grams of cyclohexanone was added to the flask. Most of the solvent was removed again by a rotary evaporator until a thick liquid was obtained. The remaining reaction mixture weighed about 10 to 12 grams. This treatment was repeated two more times to ensure that all xylenes were exchanged for cyclohexanone. The solution was then diluted with cyclohexanone to obtain an 18% solids concentration solution. The solution was slowly filtered through a 0.1 micron Teflon filter at a pressure of less than 20 psi. Repeat the previous steps. The final composition was 18% solids with 12% by weight polymethysilane and 50% by weight polycaprolactone and the balance was a thermosetting component. Inventive Examples 33-35—Preparation of a composition comprising a polycaprolactone, a thermosetting component and an admixture of o-cresol novolac resin The thermosetting ingredient (4.00 g) similar to the aforementioned Preparation Example 1 or 2 Varnish resin (0.12 g; molecular weight 1760; supplied by Schneider International) as adhesion promoter, polycaprolactone (2.53 g) as pore former, and 37.66 g of cyclohexanone added to plastic equipped with magnetic stirrer Inside the bottle. The solution was at -112-200406031 (106) Silkworm Ming Zhu: Achievement Page: Stir at room temperature for 2 hours. The solution was slowly filtered through a 0.1 micron Teflon filter at a pressure of less than 20 psi. Repeat the previous steps. The final composition was 15% solids with 3% by weight o-cresol novolac resin relative to the thermosetting component, 35% by weight polycaprolactone relative to the total solids, and the balance was the thermosetting component. Repeat as shown in Table 13 below. Table 13 Inventive Examples Weight percentage of o-cresol novolac resin 33 3.4 34 6.9. 35 12.2 Inventive Examples 36-37 — Admixtures containing polyfluorene homopolymer, polycaprolactone, thermosetting ingredients, and polymethylsilane Preparation of the composition As for Inventive Example 36, the solvent used was xylene. Polycaprolactone (4.48 g) and a commercially available polyfluorene homopolymer (0.7906 g) are used as a pore former admixture, polymethylsilazane (CH2SiH2) q, where q is 20-30 (0.48 g) ( (Supplied by Xinghuo System Co., Ltd.) as an adhesion promoter and dibenzobenzene (64.74 g) is added to a plastic bottle equipped with a magnetic stir bar. The solution was stirred at room temperature for 24 hours. The solution was then transferred to a 250 ml three-necked flask. A thermosetting component (4.00 g) similar to the aforementioned Preparation Example 1 or 2 was added, and an additional amount of xylene (21.58 g) was added. The solution was flushed with nitrogen for 5 minutes and heated at 145 ° C for 15.5 hours. The solution was slowly filtered through a 0.1 micron Teflon filter at a pressure of less than 20 psi. Repeat the previous steps. The final composition was 16.5% solids with 12 weight percent polymethysilane in relation to the thermosetting component, 15 weight percent polyfluorene with respect to the weight of the thermosetting component, and the difference was the thermosetting component. As for Inventive Example 37, the solvent used was cyclohexanone. Polycaprolactone 200406031 (107) Sounding performance page: S, Λ · ^ < Α V '^ * " * *' one (4.48 g), and commercially available poly pet homopolymer (0.79) 6 g) As a pore former admixture, polymethylsilazane (CftSiFUq, here ^ is 20-30 (0.48 g) (supplied by Xinghuo Systems) as an adhesion promoter and xylenes (6 4.74 G) was added to a plastic bottle equipped with a magnetic stir bar. The falling liquid was stirred at room temperature for 24 hours. Then the solution was transferred to a 250 ml three-necked flask. A thermosetting component (4.00 g) similar to the aforementioned Preparation Example 1 or 2 was added. And an additional amount of 21.58 grams of xylene. The solution was flushed with nitrogen for 5 minutes' and heated at 145 C for 15.5 hours. Then most of the xylene was removed by a rotary evaporator until a viscous liquid was obtained. The remaining reaction mixture weighed about 10 to 12 grams. Then added 〇Q grams of cyclohexanone to the flask. Remove the Da Shao solvent by rotating the hairpin again until a viscous liquid is obtained. The remaining reaction mixture weighs about 10 to 12 grams. This process is repeated twice more to ensure that all the toluene is toluene. The parent was changed to cyclohexanone. Then the solution was diluted with cyclohexanone to obtain 1 8% solids solution. The solution was slowly filtered through a 0.1 micron Teflon filter at less than 20 psi. Repeat the previous steps. Example 38-41-Inclusion and Polycaprolactone, 埶 呵 佳 成 义~ Base polymethylated stone eve_ Preparation of the composition of the exchange of Yuan As for Inventive Examples 38 and 40, Inventive Example 37 was repeated, but the amount of polymethylsilyl silane was changed as shown in Table 14. As for the inventive examples 39 and 41, Inventive Example 36 was repeated, but the amount of polyfluorene silane was changed as shown in Table 14. In Table 14, PAN represents a polyfluorene homopolymer, PCL represents polycaprolactone, and PCS represents polymethylsilane. Table 14 P 发明 q Through Example 38% PAN in pore former admixture% PCL in pore former admixture% PCS Solvents || 15 50 6.7 Cyclohexanone 39 15 50 ~ 6J Xylene-114- 200406031 Invention Performance Sheet '(108) 40 15 50 3 Cyclohexanone 41 15 50 3 Xylene Invention Example 42-Preparation of Film of Invention Example 5 Invention Example 5 The composition was applied using typical coating conditions known to those skilled in the art To the substrate. As a result, the obtained spin coating composition was subjected to nitrogen (< 50 ppm oxygen) at the following temperature. To dry:. 125 ° C, 250 ° C and 300 ° C oven curing conditions
於N2 (26升/分鐘)於400°C經歷60分鐘時間,係以每分鐘5°K 由250°C升高溫度。硬化溫度係於350°C至450°C之範圍。組 合物中,成孔劑分解,分解後之成孔劑氣化,因而於組 合物形成孔隙。結果所得各層根據前述分析試驗方法分 析,分析所得層性質報告於下表15。 表15 參數 發明實施例42 硬化處方 400°C/2 小時 薄膜厚度 0.3-1.2 微米 折射率η (烤乾後) 1.6600 折射率η(硬化後) 1.3600 厚度(烤乾後,奈米) 2885.00 厚度(硬化後,奈米) 2874.00 收縮率% (烤乾至硬化) -0.30 介電常數(周圍) 1.93 介電常數(除氣) 1.901 模量(Gpa) 2·26±0·59(1.2微米) 硬度(Gpa) 0.16±0.05( 1.2微米) 玻璃轉換溫度(°C ) 〉410(第一週期) 平均尖峰孔隙直徑 20奈米 平均孔隙直徑 4.1奈米 孔隙容積(立方釐米/克) 0.557 薄膜品質 良好 膠帶試驗 通過 於425°C之穩定性 4.5% 發明實施例43 —發明實施例6之薄膜之製備 -115 - 200406031 (109) 奋明說明績頁: 發明實施例6之組合物使用熟諳技藝人士已知之典型塗 覆條件以及使用發明實施例42之烤乾及硬化條件而施用 至基板。組合物中,成孔劑分解,分解後之成孔劑氣化 ,藉此形成孔隙於組合物。結果形成之該層根據前述分 析試驗方法分析,分析所得性質報告於下表16。 表16 參數 ! 發明實施例43 折射率η (烤乾後) 1.6600 折射率η(硬化後) 1.4150 Νζ 2.00 厚度(烤乾後,奈米) 2740.74 一厚度(硬化後,奈米) 2450.00 收縮率% (烤乾至硬化) -10.61 薄膜品質 模糊(指示相分離)At N2 (26 liters / minute) at 400 ° C for 60 minutes, the temperature was increased from 250 ° C at 5 ° K per minute. The hardening temperature is in the range of 350 ° C to 450 ° C. In the composition, the pore-forming agent is decomposed, and the pore-forming agent after the decomposition is vaporized, thereby forming pores in the composition. As a result, each layer obtained was analyzed according to the aforementioned analytical test method, and the properties of the obtained layer are reported in Table 15 below. Table 15 Parameter Invention Example 42 Hardened prescription 400 ° C / 2 hours Film thickness 0.3-1.2 microns Refractive index η (after baking) 1.6600 Refractive index η (after curing) 1.3600 Thickness (after baking, nanometer) 2885.00 Thickness ( Nanometer after hardening) 2874.00% shrinkage (toasting to hardening) -0.30 Dielectric constant (around) 1.93 Dielectric constant (outgassing) 1.901 Modulus (Gpa) 2 · 26 ± 0 · 59 (1.2 microns) Hardness (Gpa) 0.16 ± 0.05 (1.2 microns) Glass transition temperature (° C)> 410 (first cycle) Average peak pore diameter 20 nm Average pore diameter 4.1 nm Pore volume (cubic centimeters / gram) 0.557 Good film quality tape The test passed a stability of 4.5% at 425 ° C. Inventive Example 43-Preparation of Inventive Example 6 Film -115-200406031 (109) Fen Ming Note Sheet: The composition of Inventive Example 6 is known to those skilled in the art Typical coating conditions were applied to the substrate using the baking and hardening conditions of Inventive Example 42. In the composition, the pore-forming agent is decomposed, and the pore-forming agent after the decomposition is vaporized, thereby forming pores in the composition. The layer formed as a result was analyzed according to the aforementioned analysis test method, and the properties obtained from the analysis are reported in Table 16 below. Table 16 Parameters! Invention Example 43 Refractive index η (after roasting) 1.6600 Refractive index η (after curing) 1.4150 Νζ 2.00 Thickness (after baking, nanometer) 2740.74 One thickness (after curing, nanometer) 2450.00 Shrinkage% (Toast to harden) -10.61 Film quality is fuzzy (indicating phase separation)
發明實施例43結果顯示發明實施例42存在有黏著促進劑 的效果。 發明實施例44-47-發明實施例7-10之薄膜之製備The results of the inventive example 43 show that the adhesive effect of the inventive example 42 exists. Inventive Examples 44-47-Preparation of Inventive Examples 7-10
發明實施例7-10之組合物使用熟諳技藝人士已知之典型 塗覆條件以及使用發明實施例42之烤乾及硬化條件而施 用至基板。組合物中,成孔劑分解,分解後之成孔劑氣 化,藉此形成孔隙於組合物。結果形成之該層根據前述 分析試驗方法分析,分析所得性質報告於下表17。 掃描電子顯微鏡(SEM)結果示於圖4及5。圖4顯示薄膜之 截面,而圖5顯示薄膜表面。隨著成孔劑含量的增加,薄 膜表面可觀察得或可見小孔,如SEM所示。如此隨著成 孔劑用量的減少,表面顯示較低孔隙度。此外,隨著成 孔劑含量的增力口,平均孔隙直徑加大,如截面SEM所示 -116- 200406031 (110) 發确說明績頁 。圖6為TDMS作圖,顯示成孔劑於約380°C開始分解。 表17 參數 發明實施 例44 發明實施 例45 發明實施 例46 發明實施 例47 成孔劑含量 50% 35% 20% 10% 黏著促進劑 12% 12% 12% 12% 硬化處方 400°C /1 小時 400°C /1 小時 400°C /1 小時 400°C /1 小時 薄膜厚度 0.3-1.2 微米 0.3-1.2 微米 0.3-1.2 微米 0.3-1.2 微米 折射率(RI)n (硬化後) 1.39 1.50 1.56 1.59 (RI)(RI) 1.93 2.25 2.44 2.54 收縮率% (烤乾至硬化) 11.7 10.5 6.4 4.1 介電常數 (周圍) 2.07 2.30 2.54 2.75 介電常數 (除氣) 2.03 2.24 2.46 2.66 模量(Gpa) 2.40±0.121 (1.2微米) 3.60±0·118 (1.2微米) 4·80±0·152 (1.2微米) 5.13土0.192 (1.2微米) 硬度(Gpa) 0.12±0.018 (1.2微米) 0.24±0.043 (1.2 微米) 0.33土0.025 (1.2 微米) 0.32±0.037 (1.2微米) 平均尖峰 孔隙直徑 12.0奈米 9.0奈米 5.0奈米 3.0奈米 平均孔隙直徑 5.1奈米 4.0奈米 2.8奈米 2.7奈米 孔隙容積 (立方釐米/克) 0.669 0.511 0.315 0.233 孔隙度 較大孔隙 巨孔 大部分為 微孔 微孔 孔隙度估值(%) 41 34 24 19 表面積 (平方米/克) 521 511 450 341 膠帶試驗 通過乾/濕 通過乾/濕 通過乾/濕 通過乾/濕 於425°C之 穩定性 5.45% 5.07% 4.30% 4.07% 結果顯示介電常數隨著成孔劑添加量的增加而降低。 發明實施例48-54 —發明實施例11-17及比較例C之落膜之製 -117- 200406031 (111) 蚕萌説成續頁::The compositions of Inventive Examples 7-10 were applied to substrates using typical coating conditions known to those skilled in the art and baking and hardening conditions of Inventive Example 42. In the composition, the pore former is decomposed, and the pore former after the decomposition is vaporized, thereby forming pores in the composition. The layer formed as a result was analyzed according to the aforementioned analytical test method, and the properties obtained from the analysis are reported in Table 17 below. Scanning electron microscope (SEM) results are shown in FIGS. 4 and 5. Fig. 4 shows a cross section of the film, and Fig. 5 shows the surface of the film. With the increase of the porogen content, small pores can be observed or visible on the film surface, as shown by SEM. As the amount of pore-forming agent decreases, the surface shows lower porosity. In addition, with the increase of the porogen content, the average pore diameter increases, as shown in the cross-sectional SEM -116- 200406031 (110). Figure 6 is a TDMS mapping showing that the porogen begins to decompose at about 380 ° C. Table 17 Parameters Invention Example 44 Invention Example 45 Invention Example 46 Invention Example 47 Pore-forming agent content 50% 35% 20% 10% Adhesion promoter 12% 12% 12% 12% Hardening prescription 400 ° C / 1 hour 400 ° C / 1 hour 400 ° C / 1 hour 400 ° C / 1 hour Film thickness 0.3-1.2 microns 0.3-1.2 microns 0.3-1.2 microns 0.3-1.2 microns Refractive index (RI) n (after hardening) 1.39 1.50 1.56 1.59 (RI) (RI) 1.93 2.25 2.44 2.54 Shrinkage% (toasting to hardening) 11.7 10.5 6.4 4.1 Dielectric constant (around) 2.07 2.30 2.54 2.75 Dielectric constant (outgassing) 2.03 2.24 2.46 2.66 Modulus (Gpa) 2.40 ± 0.121 (1.2 microns) 3.60 ± 0 · 118 (1.2 microns) 4 · 80 ± 0 · 152 (1.2 microns) 5.13 soil 0.192 (1.2 microns) Hardness (Gpa) 0.12 ± 0.018 (1.2 microns) 0.24 ± 0.043 (1.2 microns ) 0.33 ± 0.025 (1.2 microns) 0.32 ± 0.037 (1.2 microns) Average peak pore diameter 12.0 nm 9.0 nm 5.0 nm 3.0 nm Average pore diameter 5.1 nm 4.0 nm 2.8 nm 2.7 nm Pore volume (cubic Cm / g) 0.669 0.511 0.315 0.233 Partially estimated microporosity and porosity (%) 41 34 24 19 Surface area (m2 / g) 521 511 450 341 Adhesive tape test Pass dry / wet pass dry / wet pass dry / wet pass dry / wet at 425 ° C The stability is 5.45% 5.07% 4.30% 4.07% The results show that the dielectric constant decreases with the increase of the amount of pore-forming agent. Inventive Examples 48-54-Production of Falling Film of Inventive Examples 11-17 and Comparative Example C
發明實施例11-17之組合物使用熟諳技藝人士已知之典 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。比較例C係以類似發明人之審查中之美國 申請案60/350,187,申請日2002年1月15日之發明實施例之類 似方式製備,因而不含成孔劑。組合物中,成孔劑分解 ,分解後之成孔劑氣化,藉此形成孔隙於組合物。結果 形成之該層根據前述分析試驗方法分析,分析所得性質 報告於下表18。 表1 8 [7蒼明實#施 例或比較 例 折射率 (烤乾後) 折射率 (硬化後) 厚度(埃) (烤乾後) 厚度(埃) (硬化後) 收縮率% (烤乾且 硬化後) 介電常數 k (周圍) 介電常數 k (除氣) △k% 48 1.661 1.529 8518.23 8067.62 -5.29 2.48 2.18 -12.10 49 1.657 1.532 8057.8 7541.79 -6.40 2.51 2.42 -3.59 50 1.661 1.499 7225.37 7093.32 -1.83 2.54 2.44 -3.94 51 1.658 1.521 8659.18 8510.56 -1.72 2.51 2.43 -3.19 52 1.657 1.510 8025.79 7952.16 -0.92 2.53 2.43 -3.95 53 1.659 1.500 8633.55 7815.56 -9.47 2.42 2.33 -3.72 54 1.661 1.504 8899.51 8605.25 -3.31 2.42 2.35 -2.89 C 1.677 1.617 3152.00 3252.00 3.17 2.69 2.62 -2.60The compositions of Inventive Examples 11-17 were applied to substrates using typical coating conditions known to those skilled in the art and baking and hardening conditions of Inventive Example 42. Comparative Example C was prepared in a similar manner to U.S. Application 60 / 350,187, under review by the inventors, and the Invention Example of January 15, 2002, and therefore did not contain a pore former. In the composition, the pore-forming agent is decomposed, and the pore-forming agent after the decomposition is vaporized, thereby forming pores in the composition. Results The formed layer was analyzed according to the aforementioned analytical test method, and the properties obtained from the analysis are reported in Table 18 below. Table 1 8 [7 苍 明 实 # Examples or Comparative Examples Refractive index (after baking) Refractive index (after curing) Thickness (Angstroms) (After baking) Thickness (Angstroms) (After curing) Shrinkage% (Toasting After hardening) Dielectric constant k (around) Dielectric constant k (degassing) △ k% 48 1.661 1.529 8518.23 8067.62 -5.29 2.48 2.18 -12.10 49 1.657 1.532 8057.8 7541.79 -6.40 2.51 2.42 -3.59 50 1.661 1.499 7225.37 7093.32- 1.83 2.54 2.44 -3.94 51 1.658 1.521 8659.18 8510.56 -1.72 2.51 2.43 -3.19 52 1.657 1.510 8025.79 7952.16 -0.92 2.53 2.43 -3.95 53 1.659 1.500 8633.55 7815.56 -9.47 2.42 2.33 -3.72 54 1.661 1.504 8899.51 8605.25 -3.31 2.42 2.32 1.677 1.617 3152.00 3252.00 3.17 2.69 2.62 -2.60
發明 實施例 表面積 (平方米/克) 孔隙容積 (立方董米/克) 平均圓柱體孔 隙直徑(奈米) 估計BJH尖峰孔 隙直徑(奈米) 48 559.00 0.427 3.10 10.00 49 568.00 0.410 2.90 10.00 50 564.00 0.436 3.10 10.00 51 443.00 0.306 2.80 8.00 52 543.00 0.425 3.10 10.00 53 612.00 0.491 3.20 8.00 54 574.00 0.461 3.20 8.00 發明實施例55-58 —發明實施例18-21及比較例D之薄膜之製 發明實施例18-21之組合物使用熟諳技藝人士已知之典 -118 - (112) 200406031 章:日月娆Ml續頁: 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。比較例D係以類似發明人之審查中之美國 申請案6〇/350,187,申請曰2〇〇2年1月I5日之發明實施例之類 似方式製備,因而不含成孔劑。組合物中,成孔劑分解 ’分解後之成孔劑氣化,藉此形成孔隙於組合物。結果 形成之該層根據前述分析試驗方法分析,分析所得性質 報告於下表19,此處Rj表示折射率。 表19 發明實施例 或比較例 折射率 (烤乾後) 折射率 (硬化後) (RI)(RI) [«(5)1 (烤乾後) 厚度(埃) (硬化後) 收縮率% (烤乾且硬 化後) 55 1.655 1.548 2.395 6800.55 6916.90 1.71 56 1.657 1.543 2.381 6814.10 6885.99 1.06~~ 57 1.657 1.549 2.400 6792.82 6871.42 1.16 58 1.655 1.567 2.456 7520.50 7394.75 D 1.677 1.617 2.615 3152.00 3252.00 3ΛΊ~ 發明實 施例 |表面積 (平方米/克) 孔隙答積 Γ立方釐米/克) 均圓柱體孔 隙直徑(奈米) 估計BJH尖峰孔 隙直徑(奈米) 57 56 476__ 464 0.31 2.60 16.00 一"^5307 2.60 14.00 一一5^97 2.50 20.00 57 468 58 _ 429__ ^0275 — 2.60 20.00 發明實施例59-6立二之薄-膜m 發明實施例24-30之組合物使用熟諳技藝人士已知之典 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。組合物中’成孔劑分解’分解後之成孔劑 氣化,藉此形成孔隙於組合物。結果形成之該層根據前 述分析試驗方法分析,分析所得性質報告於下表20。 結果顯示包含笼與異戊酸乙烯酯共聚物成孔劑之組合 200406031 (113) 參:瓶日月祕 物具有介電常數,比包含苊與丙歸·酸第三丁酯共聚物成 孔劑之組合物之介電常數低。Invention Example Surface Area (m2 / g) Pore Volume (cubic Dongm / g) Average Cylinder Pore Diameter (nm) Estimated BJH Spike Pore Diameter (nm) 48 559.00 0.427 3.10 10.00 49 568.00 0.410 2.90 10.00 50 564.00 0.436 3.10 10.00 51 443.00 0.306 2.80 8.00 52 543.00 0.425 3.10 10.00 53 612.00 0.491 3.20 8.00 54 574.00 0.461 3.20 8.00 Inventive Examples 55-58-Production of Inventive Examples 18-21 and Comparative Examples D. Inventive Examples 18-21 The composition was applied to a substrate using Code-118-(112) 200406031 known to those skilled in the art, continued: M1 Continued: Type coating conditions and baking and hardening conditions of Invention Example 42 were applied to the substrate. Comparative Example D was prepared in a similar manner to U.S. Application No. 60 / 350,187, which is under review by the inventors, and the invention examples of January 15, 2002, and therefore did not contain a porogen. Decomposition of the pore-forming agent in the composition ′ The pore-forming agent after decomposition is vaporized, thereby forming pores in the composition. Results The formed layer was analyzed according to the aforementioned analytical test method. The properties obtained from the analysis are reported in Table 19 below, where Rj represents the refractive index. Table 19 Inventive Examples or Comparative Examples Refractive Index (After Baking) Refractive Index (After Baking) (RI) (RI) [«(5) 1 (After Baking) Thickness (Angstroms) (After Baking) Shrinkage% ( After baking and hardening) 55 1.655 1.548 2.395 6800.55 6916.90 1.71 56 1.657 1.543 2.381 6814.10 6885.99 1.06 ~~ 57 1.657 1.549 2.400 6792.82 6871.42 1.16 58 1.655 1.567 2.456 7520.50 7394.75 D 1.677 1.617 2.615 3152.00 3252.00 3ΛΊ ~ Inventive Example | M / g) Pore answer product Γ cubic centimeter / g) Pore diameter of average cylinder (nanometer) Estimated BJH peak pore diameter (nanometer) 57 56 476__ 464 0.31 2.60 16.00 one " ^ 5307 2.60 14.00 one one 5 ^ 97 2.50 20.00 57 468 58 _ 429__ ^ 0275 — 2.60 20.00 Inventive Example 59-6 Lithium Thin-Film m The composition of Inventive Examples 24-30 uses typical coating conditions known to those skilled in the art and uses Inventive Example 42 To dry and harden conditions. The pore-forming agent after the decomposition of the pore-forming agent in the composition is vaporized, thereby forming pores in the composition. The layer formed as a result was analyzed according to the aforementioned analytical test method, and the properties obtained from the analysis are reported in Table 20 below. The results show that the combination of a cage and a vinyl isovalerate copolymer porogen 200406031 (113) Reference: The bottle and sun moon secretion have a dielectric constant, which is higher than that of rhenium and triglyceride. The composition has a low dielectric constant.
Am 發明實 施例 起始組 合物: 發明實 施例 折射率 (硬化後) 收縮率% (烤乾且 硬化後) 折射 率2 介電常 數k (周圍) 介電常 數k (除氣) △k% 表面積 (平方 米/克) 孔隙容 積(立方 厘米/克) 平均圓 柱體孔 隙直徑 (奈米) 估計 BJH尖 峰孔隙 直徑 (奈米) 59 26 1.45 16.36 2.10 2.13 2.09 1.88 594 0.651 4.4 11.0 60 27 1.41 11.26 1.99 2.1 2.06 1.90 622 0.698 4.5 14.0 61 28 1.41 8.28 1.99 2.11 Γ?07 1.90 600 0.697 4.6 12.0 62 29 1.41 9.15 2.00 2.09 2.05 1.91 614 0.696 4.5 11.0 63 30 「1.40 广5.7 1.95 2.06 2.02 1.94 577 0.738 5.1 16.0 64 '31 1.54 25.16 2.36 2.48 2.42 2.42 581 0.389 2.7 無峰值 65 32 1.48 17.11 2.18 2.33 2.28 2.15 612 0.504 3.3 7.0 66 33 1.44 12.96 2.07 2.19 2.14 2.28 649 0.631 3.9 9.0 發明貫施例明實施例3ι·^?>薄瞪之製備Am Inventive Example Starting Composition: Inventive Example Refractive index (after hardening) Shrinkage% (after baking and hardening) Refractive index 2 Dielectric constant k (around) Dielectric constant k (outgassing) △ k% Surface area (M2 / g) Pore volume (cm3 / g) Average cylinder pore diameter (nm) Estimated BJH peak pore diameter (nm) 59 26 1.45 16.36 2.10 2.13 2.09 1.88 594 0.651 4.4 11.0 60 27 1.41 11.26 1.99 2.1 2.06 1.90 622 0.698 4.5 14.0 61 28 1.41 8.28 1.99 2.11 Γ? 07 1.90 600 0.697 4.6 12.0 62 29 1.41 9.15 2.00 2.09 2.05 1.91 614 0.696 4.5 11.0 63 30 `` 1.40 5.7 1.95 2.06 2.02 1.94 577 0.738 5.1 16.0 64 '31 1.54 25.16 2.36 2.48 2.42 2.42 581 0.389 2.7 No peaks 65 32 1.48 17.11 2.18 2.33 2.28 2.15 612 0.504 3.3 7.0 66 33 1.44 12.96 2.07 2.19 2.14 2.28 649 0.631 3.9 9.0 Invention implementation examples Explain Example 3ι ^^ > preparation
發明貫施例31-32之組合物使用熟諳技藝人士已知之典 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。組合物中,成孔劑分解,分解後之成孔劑 氣化’藉此形成孔隙於組合物。結果形成之該層根據前 述分析试驗方法分析,分析所得性質報告於下表21,此 處ΝΜ表示未測定以及幻表示折射率。 重複則文說明,但改變成孔劑用量。表22中,結果顯 不具有某些熱安定性之成孔劑可經選擇而獲得某些期望 的介電常數。表22中RI表示折射率。 -The compositions of Inventive Examples 31-32 were applied to substrates using typical coating conditions known to those skilled in the art and baking and hardening conditions of Inventive Example 42. In the composition, the pore-forming agent is decomposed, and the pore-forming agent after the decomposition is gasified ', thereby forming pores in the composition. The layer formed as a result was analyzed according to the aforementioned analytical test method, and the properties obtained from the analysis are reported in Table 21 below, where NM means not measured and magic index means refractive index. Repeat the description, but change the amount of pore former. In Table 22, the results show that pore formers that do not have some thermal stability can be selected to obtain certain desired dielectric constants. In Table 22, RI indicates a refractive index. -
I % » / » ^ 21 發明貫施例 或比較例 折射率 (烤乾後) 折射率 (硬化後) (Ri)(Ri) 厚度(埃) (烤乾後) 厚度(埃) (硬化後) 收縮率% (烤 乾且硬化後) 67 CO 1.581 1.570 2.466 10819 6275.94 -41.99 Oo NM --J LlMZlJ 2.468 NM NM NM -120- (114) 200406031 發明實施例 表面積 (平方米 孔隙容積 ί立方釐米/克) 平均圓柱體孔隙 直徑(奈米) 估計BJH尖峰孔隙 直徑(奈米) 67 462 0.25 2.2 極小的4奈米 68 99^一 ^0.089 3.6 ΝΜ 表22 %成孔劑 Mw (硬化後) (RI)(RI) %厚度 變化 介電常數k (除氣) 0 ^Τ6Ϊ3 2.60 4 2.65 — 27 3000 ^ΠΤ543 2.41 -12 2.49 27 1250^ --L568 2.46 -16 - 27 530 -^L594 2.54 -19 2.58 35 3000 Τ495 2.28 -17 2.44 35 1250^ ΠΓ556 2.42 -22 240 50 3000 ΪΑ65 2.15 -31 2.27 ^ 50 1250 ^Τ497 2.24 -33 2.24 ~ 發明實施例從7〗一及略較一例g之薄膜之率丨遺 發明實施例33-35之組合物使用熟諳技藝人士已知之典 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。比較例E係根據發明人之審查中之美國申 請案60/350,187,申請曰2002年1月15曰之發明實施例4-7製備 ,因而不含本成孔劍。組合物中,成孔劑分解,分解後 之成孔劑氣化,藉此形成孔隙於組合物。所得層根據前 述分析試驗方法分析。層性質報告於下表23。I% »/» ^ 21 Invention Examples or Comparative Examples Refractive index (after baking) Refractive index (after curing) (Ri) (Ri) Thickness (Angstrom) (After baking) Thickness (Angstrom) (After curing) Shrinkage% (after drying and hardening) 67 CO 1.581 1.570 2.466 10819 6275.94 -41.99 Oo NM --J LlMZlJ 2.468 NM NM NM -120- (114) 200406031 Example of the invention ) Average cylinder pore diameter (nanometer) Estimated BJH peak pore diameter (nanometer) 67 462 0.25 2.2 Very small 4 nm 68 99 ^^ 0.089 3.6 NM Table 22% porogen Mw (after hardening) (RI) (RI)% thickness change dielectric constant k (outgassing) 0 ^ Τ6Ϊ3 2.60 4 2.65 — 27 3000 ^ ΠΤ543 2.41 -12 2.49 27 1250 ^ --L568 2.46 -16-27 530-^ L594 2.54 -19 2.58 35 3000 Τ495 2.28 -17 2.44 35 1250 ^ ΠΓ556 2.42 -22 240 50 3000 ΪΑ65 2.15 -31 2.27 ^ 50 1250 ^ T497 2.24 -33 2.24 ~ Inventive Examples From 7] and a slightly lower rate of the film g. The compositions of Examples 33-35 use typical coating conditions known to those skilled in the art and use of the invention Example 42 Curing conditions of dry roast and administered to the substrate. Comparative Example E was prepared according to the US application 60 / 350,187 in the examination of the inventors, and applied for Invention Examples 4-7 of January 15, 2002, and thus does not contain the original hole sword. In the composition, the pore-forming agent is decomposed, and the pore-forming agent after the decomposition is vaporized, thereby forming pores in the composition. The resulting layer was analyzed according to the aforementioned analytical test method. Layer properties are reported in Table 23 below.
AmAm
性質 發明 實施例69 發明 實施例70 發明 實施例71 Tb 化違 1.542 1.540 1.528 ~L623^' (硬化 16.5 〇 C Ο ~ 20.4 12.3 —圍 r\ c Λ _ 2.58 2.48 ~ΐπΤ^ —氣)一^ 2· 54 i Λ I _ 2.54 2.43 2.70^· △ k% 1.42 1.51 2.09 ι.ΤΓ^ 平均孔隙直徑 (奈米) 15 1 15 33 ΓΓ JNature Invention Example 69 Invention Example 70 Invention Example 71 Tb conversion 1.542 1.540 1.528 ~ L623 ^ '(hardened 16.5 〇C 〇 ~ 20.4 12.3 —r \ c Λ _ 2.58 2.48 ~ ΐπΤ ^ —gas) 1 ^ 2 · 54 i Λ I _ 2.54 2.43 2.70 ^ · △ k% 1.42 1.51 2.09 ι.ΤΓ ^ Mean pore diameter (nano) 15 1 15 33 ΓΓ J
[4i -121 . 200406031 發曰I諱嗯續頁, (115) 孔隙容積(立方釐 .323 364 •392 .257 米/克) 登實施.姓72·77 —發明實施例38-4L^^Ju列F之讓胺 > 竿〗備 發明實施例38-41之組合物使用熟諳技藝人士已知之典 型塗覆條件以及使用發明實施例42之烤乾及硬化條件而 施用至基板。比較例F係以類似發明人之審查中之美國 申請案60/350,187 ’申請曰2002年1月15日之發明實施例之類 似方式製備,因而不含本成孔劑。組合物中,成孔劑分 解’分解後之成孔劑氣化,藉此形成孔隙於組合物。結 果形成之該層根據前述分析試驗方法分析,分析所得性 質報告於下表24 ’此處NM表示未測定以及幻表示折射率。 發明實 施例或 ,較例 折射率 (烤乾後) 折射率1 (硬化後) ⑽⑽ 厚度(埃) (烤乾後) 厚度(埃) (硬化後) ------- 收縮率% (烤乾且 硬化後)1 介電常數 | k (周圍) 介電常數 k (除氣) 一 72 ’ 1.592 1.549 2.400 10000.36 5980.85 -40.19 2.75 1 2.61 no 一 73 NM 1.545 2.387 NM NM • NM NM 2.62 •j.uy 1 c —74 1.595 1.565 2.450 7815.35 4632.49 -40.73 2.78 2.66 "J. 10 -4.32 ^ QQ —75 1.601 1.561 2.435 2927.49 1757.16 -39.98 ^ 2.76 2.65 一 76 1.603 1.524 2.322 2781.52 1798.23 -35.35 2.53 2.45 ^ 1 c 」7 1.603 1.523 2.320 2752.07 1787.38 -35.05 2.60 ~Ιό9~~ 2.51 162~ 0.10 -3.46 1.60 一 —F 1.677 1.617 - 3152.00 3252.00 ------ ^Tbjh尖峰孔隙| 直徑(奈米) /ΐ 5 奈 一[20 發明 ^實施例 表面積i (平方米/克)| 孔隙容積 (立方厘米/克) 平均圓柱體孔隙 直徑(奈米) _ 72 507 0.2683 2.1 _ 73 483 0.23 1.9 ~ _ 74 486 0.238 ~~Ιο~~· _ 75 482 0.251 ---- 2.1 _ 76 570 0.394 ~- _ 77 550 0.371 2.7 ~ 18 」J、8奈^^ •122- 200406031 (116) 發9月說明績頁 由製備例4分離之1,3/4-貳{ Γ,3',5乂參[3〃/4〃-(苯基乙炔基)苯 基]金剛烷-7'-基}苯(顯示於圖1F)組合黏著促進劑及成孔 劑,然後溶解於溶劑,旋塗於碎晶圓上,然後烤乾及硬 化成薄膜,用於微晶片或微晶片模組。 發明實施例79 由製備例5分離之1,3-貳{ 3V4'- [ Γ,3〃,5〃-參[3〃V4〃'-(苯基乙炔 基)苯基]金剛烷-7〃-基]苯基} -5,7-貳[3〃〃/4〃〃 -(苯基乙炔基)苯 基]金剛烷(顯示於圖1F)組合黏著促進劑及成孔劑,然後 溶解於溶劑,旋塗於矽晶圓上,然後烤乾及硬化成薄膜 ,用於微晶片或微晶片模組。 圖式簡單說明 圖1A至1F顯示如何製造可用於本組合物作為熱固性成 分之以金剛垸為主之組合物。 圖2顯示一種製造可用於本組合物作為熱固性成分之以 雙金剛烷為主之組合物之方法。 圖3A至3F顯示另一種製造可用於本組合物作為熱固性 成分之以雙金剛燒為主之組合物之方法。 圖4顯示發明實施例44-47薄膜截面之掃描電子顯微相片。 圖5顯示發明實施例44-47薄膜表面之掃描電子顯微相片。 圖6顯示發明實施例46-49之熱解吸附質譜術作圖。[4i -121. 200406031 Fayu I. Continuation page, (115) Pore volume (cubic centimeter. 323 364 • 392.257 m / g) Implementation. Surname 72 · 77 — Invention Example 38-4L ^^ Ju The amine of column F> The composition of Invention Examples 38-41 was applied to the substrate using typical coating conditions known to those skilled in the art and baking and hardening conditions of Invention Example 42. Comparative Example F was prepared in a similar manner to U.S. Application 60 / 350,187 'under review by the same inventors, and was invented on January 15, 2002 in a similar manner, and thus did not contain this pore former. In the composition, the pore-forming agent is decomposed 'and the pore-forming agent is vaporized, thereby forming pores in the composition. The layer formed as a result was analyzed in accordance with the aforementioned analytical test method, and the properties obtained from the analysis are reported in Table 24 below. Here, NM indicates that the refractive index is not measured and that it indicates the refractive index. Inventive Examples or Comparative Examples Refractive index (after baking) Refractive index 1 (after curing) ⑽⑽ Thickness (Angstrom) (After drying) Thickness (Angstrom) (After curing) ------- Shrinkage% ( After baking and hardening) 1 Dielectric constant | k (peripheral) Dielectric constant k (outgassing)-72 '1.592 1.549 2.400 10000.36 5980.85 -40.19 2.75 1 2.61 no-73 NM 1.545 2.387 NM NM • NM NM 2.62 • j .uy 1 c —74 1.595 1.565 2.450 7815.35 4632.49 -40.73 2.78 2.66 " J. 10 -4.32 ^ QQ —75 1.601 1.561 2.435 2927.49 1757.16 -39.98 ^ 2.76 2.65-76 1.603 1.524 2.322 2781.52 1798.23 -35.35 2.53 2.45 ^ 1 c '' 7 1.603 1.523 2.320 2752.07 1787.38 -35.05 2.60 ~ Ιό9 ~~ 2.51 162 ~ 0.10 -3.46 1.60 a--F 1.677 1.617-3152.00 3252.00 ------ ^ Tbjh peak pores | diameter (nm) / ΐ 5 nm [20 Invention ^ Example surface area i (m2 / g) | Pore volume (cm3 / g) Average cylinder pore diameter (nm) _ 72 507 0.2683 2.1 _ 73 483 0.23 1.9 ~ _ 74 486 0.238 ~~ Ιο ~~ · _ 75 482 0.251 ---- 2.1 _ 76 570 0.394 ~-_ 77 550 0.371 2.7 ~ 18 "J, 8 Nai ^^ • 122- 200406031 (116) Posted in September, explaining that the performance page was separated from Preparation Example 1, 3 / 4- 贰 {Γ, 3 ', 5 乂 ref [3〃 / 4〃- (phenylethynyl) phenyl] adamantane-7'-yl} benzene (shown in FIG. 1F) combines an adhesion promoter and a pore former, and then dissolves in a solvent, spin-coated on a broken wafer, and then Bake and harden into thin films for microchips or microchip modules. Invention Example 79 1,3- 贰 {3V4'- [Γ, 3〃, 5〃-〃 [3〃V4〃 '-(phenylethynyl) phenyl] adamantane-7〃 -Yl] phenyl} -5,7- 贰 [3〃〃 / 4〃〃- (phenylethynyl) phenyl] adamantane (shown in Figure 1F) combines adhesion promoter and pore former, and then dissolves in Solvents are spin-coated on silicon wafers, then baked and hardened into thin films for microchips or microchip modules. Brief Description of the Drawings Figures 1A to 1F show how to make a composition based on diamond gangue which can be used as the thermosetting component of the composition. Fig. 2 shows a method for producing a bisdamantane-based composition which can be used as a thermosetting component of the present composition. Figures 3A to 3F show another method of manufacturing a bismuth-based composition which can be used as the thermosetting component of the present composition. FIG. 4 shows a scanning electron micrograph of a cross section of a thin film of Example 44-47 of the invention. FIG. 5 shows a scanning electron micrograph of the surface of the thin film of the inventive example 44-47. Figure 6 shows a thermal desorption mass spectrometry plot of Inventive Examples 46-49.
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