TW200418721A - A method for growing arrays of carbon nanotubes - Google Patents
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200418721 五、發明說明(1) 【發明所屬之技術領域】 本散明係關於一種奈米碳管之製備方法,特別係關於 一種於普通金屬基底製備奈米碳管陣列之方法。 【先前技術】 ' 1 9 9 1年,日本N E c公司研究人員I i j i m a意外發現奈米 碳管,請參見:,,Hellcal microtubules 〇f graphitic carbon , S· Iijima, Nature, v〇l· 354, P56(1991), 因為奈米碳管之優異特性,其潛在的應用一直受到人們廣 泛關注,尤其係在電子領域。由於奈米碳管之直徑極小, 3 Ϊ i ΐ至十幾奈米,在較小電場之作用下就可以從其 大鈿务射兔子,因而可用作場發射陰極。 和,人們在奈米材料及其應用領域進行各種研 ::ΐ國碳管陣列之製備方法及其應用進行研 九、S 弟,232, 706號揭露一種場發射裝置,此發200418721 V. Description of the invention (1) [Technical field to which the invention belongs] This Sanming is about a method for preparing a nano carbon tube, especially a method for preparing a nano carbon tube array on a common metal substrate. [Prior technology] 'In 1991, a researcher at Japan NE c company I ijima accidentally discovered a nano carbon tube. P56 (1991), because of the excellent characteristics of carbon nanotubes, their potential applications have been receiving widespread attention, especially in the electronics field. Due to the extremely small diameter of carbon nanotubes, from 3 Ϊ i ΐ to more than a dozen nanometers, they can shoot rabbits from their large tasks under the action of a small electric field, so they can be used as field emission cathodes. And, people have carried out various researches in nanomaterials and their application fields :: Lao Guo carbon tube array preparation methods and their applications IX, S, 232, 706 disclosed a field emission device, this development
明利用CVD (化學廣相兮夢、土产夕 私牙丁衣置此I 吉, 相沈積)法在多孔矽基底上生長出垂 直;土、-之不米碳管陣列,其包 · ^ ^ ^ ^ 通過電化學姓刻方法形成多孔層,:。:多 金屬催化劑,最後通入碳氯氣,上:積 於基底、高度為幾百^/在太\孔石夕基底上生長得到垂直 用之基底為多孔,晶片,其;;差惟遠 優良,而場發射顯示器之顯示點陣尋址車: 性且能夠承载較大電流的電極,在 搶 '大功率行波 .,、他應用領域,如電子 寺為件之陰極亦需要導電性優良、可承Ming used the CVD (chemical broad-phase dream, native sacrifice robe) to grow the vertical on a porous silicon substrate; the soil, carbon nanotube array, and its package · ^ ^ ^ ^ Porous layer formed by electrochemical surname engraving method :. : Multi-metal catalyst, finally pass in the carbon and chlorine gas, on: accumulated on the substrate, a height of several hundred ^ / grown on the substrate of Tai \ Kongshixi to obtain a vertical substrate, which is porous, wafer, and; the difference is far superior, The field-emission display of the dot matrix addressing car: electrodes that are capable of carrying large currents and are rushing for high-power traveling waves. In other applications, such as the cathode of the electronic temple, the cathode also needs to have excellent conductivity and can be used. Bear
Ι^ΗΙΙΗ 200418721 、發明說明(2) 載較大電流之電極。為能夠充分發揮奈米碳管之優良導電 性,需要用優良導體與之相連,故,金屬仍然係最佳選兒 擇。因為金屬材料對CVD法影響較大,金屬容易與催化劑 办成合金’或者因自身具有催化作用而強烈分解碳氫氣形 成積碳,導致無法正常生長奈米碳管。 /I ^ ΗΙΙΗ 200418721, invention description (2) An electrode carrying a larger current. In order to make full use of the excellent conductivity of carbon nanotubes, it is necessary to connect them with good conductors, so metal is still the best choice. Because metal materials have a greater influence on the CVD method, metals are likely to alloy with catalysts' or because they have a catalytic effect, they strongly decompose carbon and hydrogen to form carbon deposits, resulting in the inability to grow nano carbon tubes normally. /
Ch· Emmenegger等人提出一種在矽或金屬鋁基底上生 長奈米碳官陣列之方法,發表於Applied SurfaceCh. Emmenegger et al. Proposed a method for growing nano-carbon carbon arrays on silicon or metal aluminum substrates, published on Applied Surface
Science 162-163(2000),452-456,該方法包括以下步 驟:Science 162-163 (2000), 452-456, the method includes the following steps:
1·在矽或铭基底表面塗覆1^(1^〇3)3薄膜,厚度為5 1 Onm ; 2.將基底放置於反應爐内,真空環境中加熱至奈米碳 管合成溫度; 3·通入5分鐘氮氣,流速為丨⑽“/!^^ ; 4·通入2ml/min的乙烯以及98 ml/min的氮氣,在環境 氣壓為0.5 bar條件下反應〇· 5至3小時; 結果,奈米碳管陣列生長在催化劑生長點上,奈米碳 管之直徑取決於催化劑顆粒之直徑,高度為1 〇 -1 5微米。1. Apply a 1 ^ (1 ^ 〇3) 3 film on the surface of the silicon or silicon substrate with a thickness of 5 1 Onm; 2. Place the substrate in a reaction furnace and heat it to the carbon nanotube synthesis temperature in a vacuum environment; 3 5 minutes of nitrogen gas flow at a flow rate of 丨 ⑽ "/! ^^; 4 2% of ethylene ethylene gas and 98 ml / min nitrogen gas flow at 0.5 bar for 0.5 to 3 hours; As a result, the nano carbon tube array grows on the catalyst growth point, and the diameter of the nano carbon tube depends on the diameter of the catalyst particles, and the height is 10-15 micrometers.
上述方法可以在金屬鋁基底上生長奈米碳管陣列,雖 然鋁係普遍使用的催化劑載體,卻不適合做場發射陰極, 而且,該方法可選擇之基底材料有限,只能選擇鋁以及與 叙性質相近的有限幾種金屬材料,仍未能解決前面所述在 普通金屬基底上生長奈米碳管之問題。 有鑒於此,提供一種適宜在普通金屬基底上生長奈米The above method can grow a nano carbon tube array on a metal aluminum substrate. Although aluminum is a commonly used catalyst support, it is not suitable for field emission cathodes. Moreover, the method has limited choice of substrate materials. Only aluminum and its properties can be selected. Similar limited metal materials have not been able to solve the aforementioned problem of growing carbon nanotubes on ordinary metal substrates. In view of this, there is provided a method for growing nanometers on a common metal substrate.
200418721 五、發明說明(3) 碳管陣列的方法實為必要 【内容】 在於提供一種適宜在普通金屬基底上生 長奈米碳管之方法 本發明之另一目的在於提供一種場發 法 射陰極之製備方 為實現上述目的,本發明提供的 ;金:基u化該金屬基底,☆其表面:成二層氧:供 層,於虱化唇表面形成一催化劑層;通入炉 ^ 催化劑作用下發生化學反雇,使得太二虱虱體,亚於 長,同時產生還原性氣體將該氧化層還原。惟化d層生 相較於現有技術,本發明具有如下優點·他 與金屬基底之間通過氧化層間隔開,從而避免反 二2 金屬基底對催化劑產生不良影響,反應生成奈米::。 中,產生氫氣將氧化層還原,可使得奈米碳管畜、=:公私 金屬基底上,提高奈米碳管與金屬基底之電 贫在 【實施方式】 丧° 請參見第一圖,係本發明奈米碳管製備 圖,其包括下列步驟: 忐之疏程 步驟1係提供金屬基底。本步驟提供之 生長奈米碳營之支撐基底,此金屬基底可以為屬_基底用作、 合金片,也可以在其他材料之基片表面形成金屬式人 極,本發明對所採用的金屬或合金材料沒有特二二、/毛 需在奈米碳管之生長溫度(一般約為700 t〜1〇{)〇 ^ }、’只200418721 V. Description of the invention (3) The method of carbon tube array is really necessary [Content] It is to provide a method suitable for growing carbon nanotubes on a common metal substrate. Another object of the present invention is to provide a field emission cathode In order to achieve the above purpose, the preparation method provided by the present invention is: gold: base metallized the metal substrate, ☆ its surface: formed into two layers of oxygen: supply layer, a catalyst layer is formed on the surface of the lice lip; the catalyst is introduced into the furnace ^ The occurrence of chemical counter-employment makes the body of the two lice too long, and at the same time generates a reducing gas to reduce the oxide layer. Compared to the prior art, the present invention has the following advantages: The present invention has the following advantages: • It is separated from the metal substrate by an oxide layer, so as to avoid the negative effect of the reverse metal substrate on the catalyst and the reaction to generate nano ::. In the production of hydrogen, the oxide layer can be reduced, which can make the carbon nanotubes and metal substrates on the public and private metal substrates to increase the electrical depletion of the carbon nanotubes and the metal substrate. [Embodiment] Please refer to the first figure for details. Inventing a nano carbon tube preparation drawing, which includes the following steps: Step 1 of providing a metal substrate is to provide a metal substrate. The support substrate for growing the nano-carbon camp provided in this step, the metal substrate can be a metal substrate, an alloy sheet, or a metal pole can be formed on the surface of a substrate of other materials. The alloy material does not have special 22, / wool needs to grow at the temperature of the nano carbon tube (generally about 700 t ~ 1〇 {) 〇 ^}, 'only
I麵 第7頁 200418721 五、發明說明(4) 下列條件即可: a)不發生炫化; ^ 2所‘用的其他材料的基片發生共溶; 的基片相容;至生長溫度範圍内,其熱膨脹係數與所選用 化。 S 生長過程中因吸氫而產生膨脹或碎裂等變 即可如果直接選用金屬片或合金片,則只需滿足a則條件 大部分金屬材料均可滿足上述條件,如以、 =u、不銹鋼及其它合金。所述其他 極,要求1表面二:’為能在其表面形成金屬或合金電 磁控濺射法等。定平整度,开)成電極的方法有電鍍、 為此侍到排列有序的奈米碳管陣列, 一 J屬以面利用機械抱光或電化學抛光等方法;= =。千正度,以滿足普通CVD法生長奈米碳管陣列之需 屬美化金屬基底生成氧化層。將步驟1提供之金 【ίΐΐ ΐ:表:”屬氧化層,氧化層之厚度小於1 空氣中加熱至—定4 ’較簡單之方法係在 可形成氧化層。 金屬基底表面即 Y驟3係在氧化層上形成催化劑層。即在步驟2形成的 200418721I surface, page 7, 200418721 V. Description of the invention (4) The following conditions are sufficient: a) no glare occurs; ^ 2 substrates of other materials used are co-soluble; the substrates are compatible; to the growth temperature range Within, its coefficient of thermal expansion and selected use. S Swelling or cracking due to hydrogen absorption during the growth process can be used. If a metal sheet or alloy sheet is directly selected, only a is required. Most metal materials can meet the above conditions, such as, = u, stainless steel. And other alloys. The other poles are required to have one surface and two surfaces: ', which can form a metal or alloy electromagnetron sputtering method on the surface. The method of setting the flatness and opening) to form the electrode includes electroplating, and an array of ordered carbon nanotubes is used for this purpose. One method is to use mechanical abrasion or electrochemical polishing on the surface; = =. Thousands of degrees, in order to meet the needs of growing carbon nanotube arrays by ordinary CVD method. It is to beautify the metal substrate and generate an oxide layer. The gold provided in step 1 [ίΐΐ ΐ: Table: "It is an oxide layer. The thickness of the oxide layer is less than 1 and heated to -4 in air. A simpler method is to form an oxide layer. The surface of the metal substrate is Y series 3 A catalyst layer is formed on the oxide layer. That is, 200418721 formed in step 2.
五、發明說明(5) 金屬基底表面氧化層上形成催化劑層。目前,CVD法生長 奈米碳管陣列常用的催化劑為金屬鐵、鈷、鎳及其氧化 物,形成催化劑層的方法有:電子束蒸發法、其他電化學 方法等。催化劑層的厚度只需1奈米至丨〇奈米即可。 步驟4係退火處理催化劑層。將步驟3形成的具有金屬 催化劑層的金屬基底進行退火處理,使得催化劑層形成奈 米級催化劑顆粒,若催化劑為金屬,則在退火過裎中伴隨 著發生氧化反應’將金屬氧化成金屬氧化物。退火所得之 顆粒大小將決定以後生長奈米碳管之直徑大小。5. Description of the invention (5) A catalyst layer is formed on the oxide layer on the surface of the metal substrate. Currently, the commonly used catalysts for growing carbon nanotube arrays by CVD are metal iron, cobalt, nickel, and their oxides. The methods for forming the catalyst layer include electron beam evaporation and other electrochemical methods. The thickness of the catalyst layer only needs to be 1 nm to 0 nm. Step 4 is an annealing treatment of the catalyst layer. The metal substrate with the metal catalyst layer formed in step 3 is annealed so that the catalyst layer is formed into nano-sized catalyst particles. If the catalyst is a metal, the oxidation reaction is accompanied by an oxidation reaction during the annealing process to oxidize the metal to a metal oxide. . The particle size obtained by annealing will determine the diameter of the carbon nanotubes to be grown in the future.
步驟5係CVD法生長奈米碳管陣列,並將氧化層還原為 金屬。利用CVD法在上述金屬基底上生長奈米碳管陣列,Step 5 is a CVD method for growing a carbon nanotube array and reducing the oxide layer to a metal. Growing a carbon nanotube array on the above metal substrate by a CVD method,
同時將步驟2形成的金屬基底表面氧化層還原為金屬。CVD 法的生長條件與在多孔矽基底上生長奈米碳管的條件基本 相同,通入碳源氣,例如乙烯或乙炔等,在一定溫度(例 如:70 0 °C〜1 0 0 0 °C )下反應,在催化劑顆粒上生長出奈米 碳官,在反應的同時,碳源氣釋放出氫氣,將金屬基底表 面氧化層還原為金屬,使得奈米碳管直接與金屬基底接 觸0 下面結合具體實施例說明本發明方法的過程。 請參照第二圖,本私明楚 嗌月弟一貝施例中選用不錢鋼1 〇作 為金屬基底’其係一種高炫赴人A _ 里回%點合金,熔點可超過1 〇 〇 〇 , 且不會在反應過程中吸氫而 4 TO今生膨脹或碎裂,其尺 可視具體要求而媒定。不錢鋼志 卜奶之表面須 有一定 以適應生長奈米碳管陣列需要广 、 又 』而要(一般而言,平整度越好,At the same time, the surface oxide layer of the metal substrate formed in step 2 is reduced to metal. The growth conditions of the CVD method are basically the same as the conditions for growing carbon nanotubes on a porous silicon substrate. A carbon source gas, such as ethylene or acetylene, is introduced at a certain temperature (for example, 70 0 ° C to 100 ° C). ) Under the reaction, nano-carbon is grown on the catalyst particles. During the reaction, the carbon source gas releases hydrogen to reduce the surface oxide layer of the metal substrate to metal, so that the nano-carbon tube directly contacts the metal substrate. Specific embodiments illustrate the process of the method of the invention. Please refer to the second figure. In this example, the younger brother Chu Yiyue used a stainless steel 10 as the metal substrate. It is a high-visibility alloy with a melting point of more than 1,000. And it will not absorb hydrogen during the reaction and 4 TO expands or cracks in this life. The size can be determined according to specific requirements. Without money, the surface of the milk must be certain to meet the needs of growing carbon nanotube arrays. In general, the better the flatness,
200418721 五、發明說明(6) 所得之奈米碳管有序性越好),其表面平整度可以通過機 械為光、電化學為光等方法實現。 接著,如第三圖所示,將不錄鋼1 〇在空氣中加熱至 5 0 0 °C,發生氧化反應,經過一段時間不銹鋼1 〇的表面形 成一層金屬氧化層1 2,其厚度與氧化反應的時間有關,時 間越長,厚度越厚,金屬氧化層1 2的厚度小於1微米即 可’優選為10〜100奈米。 如第四圖所示,通過電子束蒸發法在金屬氧化層1 2上 形成一層催化劑層1 4,所述催化劑層1 4 一般為金屬鐵、200418721 V. Description of the invention (6) The better the order of the obtained carbon nanotubes), the smoothness of the surface can be achieved by means of mechanical light and electrochemical light. Next, as shown in the third figure, the non-recording steel 10 is heated in air to 500 ° C, and an oxidation reaction occurs. After a period of time, a surface of the stainless steel 10 is formed with a metal oxide layer 12 whose thickness and oxidation are The reaction time is related. The longer the time is, the thicker the thickness is. The thickness of the metal oxide layer 12 can be less than 1 micrometer, and it is preferably 10 to 100 nanometers. As shown in the fourth figure, a catalyst layer 14 is formed on the metal oxide layer 12 by an electron beam evaporation method. The catalyst layer 1 4 is generally metallic iron,
鈷、鎳或其氧化物等,催化劑層1 4的厚度約為1〜1 〇奈米。 從而,催化劑層1 4與不銹鋼1 0之間通過金屬氧化層1 2連 接’使得催化劑層1 4與不銹鋼1 0間隔開。優選再將催化劑 層1 4置於空氣中’在3 〇 〇 C溫度下進行退火處理一段時 間’使得催化劑層1 4氧化並收縮成為奈米級催化劑顆粒。 最後,通入碳源氣體乙烯,以CVD法在催化劑層丨4上生長 出奈米碳官陣列1 6,因催化劑層1 4與不銹鋼1 〇之間通過金 屬氧化層1 2間隔開,所以,在發生反應的過程中不銹鋼ι 〇 =會影響催化劑之催化作用,可順利生長出奈米碳管。乙 烯裂解反應生成奈米碳管丨6的同時釋放出氫氣,氫氣與The thickness of the catalyst layer 14 is cobalt, nickel or an oxide thereof, and the thickness is about 1 to 10 nm. Thus, the catalyst layer 14 is connected to the stainless steel 10 through the metal oxide layer 12 so that the catalyst layer 14 is spaced from the stainless steel 10. Preferably, the catalyst layer 14 is further placed in the air and annealed at a temperature of 300 ° C for a period of time so that the catalyst layer 14 is oxidized and shrunk into nano-sized catalyst particles. Finally, the carbon source gas ethylene was passed in, and a nano carbon official array 16 was grown on the catalyst layer 4 by a CVD method. The catalyst layer 14 and the stainless steel 10 were separated by a metal oxide layer 12. Therefore, During the reaction, stainless steel ι 〇 = will affect the catalytic effect of the catalyst, and nano carbon tubes can grow smoothly. Ethylene cracking reaction produces nano carbon tubes, and hydrogen is released at the same time.
,鋼If表面金屬氧化層12發生還原反應,最终將金屬氧化 曰逛原為金屬,從而奈米碳管16直接與不銹鋼接觸, 如第五圖所示。 ,將該矽基片 然後在該石夕基 本發明第二實施例中,先提供一矽基片 表面進行拋光處理,使其具有一定平整度;The reduction reaction of the metal oxide layer 12 on the surface of the steel If will eventually oxidize the metal to metal, so that the carbon nanotube 16 is in direct contact with the stainless steel, as shown in the fifth figure. The silicon substrate and then in the second embodiment of the present invention, a silicon substrate is first provided with a surface for polishing treatment so as to have a certain flatness;
第10頁 200418721 五、發明說明Page 10 200418721 V. Description of the invention
片表面上通過電鍍方法形成金屬或合金層,作為八 底;再將讀金屬基底經過前面所述步驟2、+驟金屬基 以及步驟5,在金屬基底上生成奈米碳管。^沭石、步驟4 可用玻璃、石英等其他非金屬材料替代。k矽基片亦 本發明提供之奈米碳管製備方法,可以並、 或合金作為金屬基底,不限於前面所述的幾種二通金屬 金屬基底氧化、形成催化劑層的方法也不限於實施二中: 列舉的方&;並且,生長奈米碳管所用的碳源氣體、催化 劑也不限於前面所述幾種,所屬技術領域普通技術人員所 能知暖的竣源氣體以及催化劑均可使用。 、 綜上所述,本發明確已符合發明專利之要件,遂依法 提出專利申明。惟,以上所述者僅為本發明之較佳實施 例,自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化,皆 應涵蓋於以下申請專利範圍内。A metal or alloy layer is formed on the surface of the sheet by an electroplating method as an eighth substrate; then, the read metal substrate is subjected to the aforementioned steps 2, + metal step, and step 5 to generate a nano carbon tube on the metal substrate. ^ Vermiculite, step 4 can be replaced with other non-metallic materials such as glass and quartz. The k silicon substrate is also a method for preparing a nano carbon tube provided by the present invention, which can be combined with, or an alloy as a metal substrate, and is not limited to the methods of oxidizing and forming a catalyst layer of the two kinds of two-way metal metal substrates described above. Middle: The enumerated formulas are not limited to the carbon source gases and catalysts used for growing the carbon nanotubes. The ordinary source gases and catalysts known to those skilled in the art can be used. . In summary, the present invention has indeed met the requirements for an invention patent, and a patent declaration was submitted in accordance with the law. However, the above is only a preferred embodiment of the present invention, and it cannot be used to limit the scope of patent application in this case. All equivalent modifications or changes made by those skilled in the art of the case with the aid of the spirit of the present invention shall be covered by the scope of the following patent applications.
200418721 圖式簡單說明 第一圖係本發明奈米碳管之製備方法流程圖。 第二圖係本發明奈米碳管之製備方法所用基底示意 圖。 第三圖係在所用基底表面形成氧化層之示意圖。 第四圖係在氧化層上形成催化劑層之示意圖。 第五圖係利用本發明奈米碳管製備方法所得之奈米碳 管陣列示意圖。 【主要元件符號說明】 不銹鋼 催化劑層 10 14 金屬氧化層 奈米碳管陣列 12 16200418721 Brief description of the diagram The first diagram is a flowchart of a method for preparing a carbon nanotube of the present invention. The second figure is a schematic view of a substrate used in the method for preparing a carbon nanotube of the present invention. The third figure is a schematic diagram of forming an oxide layer on the surface of the substrate used. The fourth diagram is a schematic diagram of forming a catalyst layer on an oxide layer. The fifth figure is a schematic view of a nano carbon tube array obtained by using the method for preparing a nano carbon tube according to the present invention. [Description of Symbols of Main Components] Stainless Steel Catalyst Layer 10 14 Metal Oxide Layer Nano Carbon Tube Array 12 16
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