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TW200416867A - Method of fabrication for hollow microneedle array - Google Patents

Method of fabrication for hollow microneedle array Download PDF

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Publication number
TW200416867A
TW200416867A TW092103315A TW92103315A TW200416867A TW 200416867 A TW200416867 A TW 200416867A TW 092103315 A TW092103315 A TW 092103315A TW 92103315 A TW92103315 A TW 92103315A TW 200416867 A TW200416867 A TW 200416867A
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Taiwan
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patent application
manufacturing
item
scope
microneedle array
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TW092103315A
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Chinese (zh)
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TW594870B (en
Inventor
Shih-Chi Kuo
Shiang-Fu Chen
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Ind Tech Res Inst
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Publication of TW200416867A publication Critical patent/TW200416867A/en

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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M37/00Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin
    • A61M37/0015Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin by using microneedles
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
    • A61M37/00Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin
    • A61M37/0015Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin by using microneedles
    • A61M2037/0053Methods for producing microneedles

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dermatology (AREA)
  • Medical Informatics (AREA)
  • Anesthesiology (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Hematology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Micromachines (AREA)

Abstract

Methods for manufacturing microneedle array, with simplified procedures and a lower material cost, are provided to fabricate microneedles each having an end with inclined plane. Because of the sharp end can easily intrude into an organism, the microneedle array is favorable for applications in drug dispensing and sampling. The fabrication procedure starts from wet-etching a silicon base to form an indent with ramp geometry area. Using the indent as a mold, the microneedle array can be produced by varies ways such as metal plating, exposing/developing, and micro processing.

Description

200416867 五、發明說明(l) 發明所屬之技術領域」 特別ί ΐ明ί關於—種微針頭(mlcroneedle)之製造方法, 特別疋種端頭呈斜面狀的中空微針頭陣列(h〇llow microneedle array)之製造方法。 【先前技術】 认 r I 空微針頭陣列(h〇U〇w microneedle array)卢 於採血糸統、微量採樣與荜 y)廣泛運用 料可區分為半導體材料 ^ / 、專生西項或,其類型依材 s T ¥體材枓、南分子材料及金屬。 目别以半導體材料製造中 主,在相關的專利前宰句拓wnno+頭陣列夕+以矽晶圓為 圆_65 等案件 5 、麵17 9 8 5、 蝕刻於薄膜沉積步驟,二衣广由於^ 長,以致產能不峨口 ::造程序上較為繁雜且需時漫 重。 “成本亦無法降低,量產之路困難重 另外,部分製程製# φ US6334856,其流道寬度°是^疋錐形針頭,相關前案如 的,在兼顧内徑和結構強根部向末端漸次縮小 提高陣列的密度’造成採:不足:::此=十,往無法 應用上,由於管徑逐漸縮小 士 、 通 或疋在樂物注射的 高驅動功率,相對而言拉高了:阻增大,因此根部端必須提 至於較常見的平頭型微^備成本。 入侵撓性的生物組織,相對來^、’則因為尖銳度不足,不易 否則在勉強”的情形下會有Ϊ⑶備更高的結構強度, 【發明内容】 之虞200416867 V. Description of the invention (l) The technical field to which the invention belongs "In particular, ΐ 明 ί: A method for manufacturing a kind of microneedle (mlcroneedle), especially a kind of hollow microneedle array with a slanted tip ) 的 制造 方法。 Manufacturing method. [Prior technology] Recognized r i empty microneedle array (h〇U〇w microneedle array) Lu Yu blood collection system, micro sampling and 荜 y) widely used materials can be divided into semiconductor materials ^ /, professional students or Type by material s T ¥ body material 枓, southern molecular material and metal. In the field of semiconductor material manufacturing, in the relevant patents, it is said that before the related patents, extension wnno + head array evening + silicon wafer as a circle _65 and other cases 5, surface 17 9 8 5, etching in the thin film deposition step, Eryi Guang due to ^ Long so that the production capacity is not so impressive :: The manufacturing process is complicated and takes a long time. "The cost cannot be reduced, and the road to mass production is difficult. In addition, part of the process system # φ US6334856, the width of the flow channel ° is a conical needle, as in the previous case, the inner diameter and the strong root of the structure are gradually taken to the end. Shrinking and increasing the density of the array 'causes: Insufficient ::: This = ten, can not be applied, due to the gradual shrinking of the pipe diameter, high driving power of the injection of fun, or thorium, which is relatively high: resistance increase Large, so the root end must be raised to the more common flat-head micro-preparation costs. Invasion of flexible biological tissues, relatively, ^, 'because of the lack of sharpness, it is not easy, otherwise there will be a marginal "situation. Structural strength, [Summary of the invention]

200416867 五、發明說明(2) 本創作欲解決之技術問題,羽山 程的外型、結構強度受限於穿 I二狭镟針頭陣列製 製程::亦過於繁雜,無法達到量;的合』,現有的 列製造方;,本發明所提供的微針頭陣 後利用此-斜圓=斜面狀的缺凹區 '然 影或微加工等方式,來製造微:;;;鐘著金屬、曝光顯 本發明所達成之# 4 ^ ' 頭陣列,此微針頭不:能以簡易製程製造出微針 入生物組織,亦可作Af而壬斜面狀、具有銳角而易於侵 【實施方】】T作為翻模複製其他材質的微針頭陣列。 :’:明所提供的微針頭 上(如石夕晶圓、壓克力或光 =f主要事先在底材 子,後續進行纪著=用此缺凹區的斜面幾何作為形狀因 迕且右牡:I 金屬、曝光顯影或微加工等方六、,爽制 k具有斜面端頭的微針頭陣列。 寺方式,來製 壹、鍍著金屬製造微針頭陣列 請參閱「第1 A圖」至「當n u θ 佳實施例所提供料 弟1 Η圖」,本發明第一較 驟來完成: 列步 ㈣針碩陣列之製造方法,是藉由下 首先在一塊石夕晶圓彳 1 1 〇(如氮化妙(Sl3N4n 〇的「上下表面舖設保護層 圖」铺設光阻曝如第1 A圖」’「謂 、疋我$人钱刻區域,並蚀刻保護層200416867 V. Description of the invention (2) The technical problems to be solved in this creation, the appearance and structural strength of Yushan Cheng are limited by the two-narrow narrow needle array manufacturing process: It is too complicated to achieve the quantity; Existing column manufacturers; After the microneedle array provided by the present invention, this method-oblique circle = bevel-shaped recessed area 'random shadow or micromachining, is used to produce micro: ;; The # 4 ^ 'head array achieved by the present invention, this microneedle does not: can be used to make microneedles into biological tissues in a simple process, but also can be used as Af and bevel-shaped, with acute angles and easy to invade [Implementation] T as Turn the mold to copy the microneedle array of other materials. : ': On the microneedles provided by Ming (such as Shixi wafer, acrylic or light = f is mainly on the substrate in advance, and subsequent follow-up = use the bevel geometry of this recessed area as the shape and right M: I metal, exposure, development, or micromachining, etc. Six, micro-needle arrays with beveled ends are made in a temple. To make one, metal-plated micro-needle arrays, please refer to "Figure 1A" to "When nu θ is provided in the preferred embodiment, the first step of the invention" is completed in the first step of the present invention: The manufacturing method of the step-by-step pin and pin array is firstly performed on a Shixi wafer by 1 1 〇 (Such as Niu Niu (Sl3N4n 0 "layout of the protective layer on the upper and lower surfaces" laying photoresist as shown in Figure 1A "" ", said, slashed the area and etched the protective layer

第7頁 五、發明說明(3) 1 1 0後得到待濕蝕刻區 、,、 s 1 1 1中露出的局部矽晶圓 亚進而對待濕蝕刻區 圓1 0 0在濕蝕刻時所展現予濕蝕刻,由於矽晶 成具有斜面幾何之缺凹區x 0 i n性蝕刻的特性,而可形 在底侧的保護層110同樣以微景/二第王c圖」,然後 區1 1 2 ;而後,如「第1 D 式’疋義出待乾蝕刻 設起始金屬層1 2 0(如鉻、鎳θ、」在碎晶圓1 0 0頂面舖 影技術,如「第1 E m ^ , 叫等)’繼而再次利用微 材料1 3 0,並形成數個鍍 ^丄2 〇上舖設感光 屬層1 2 0 ,此鍍著區丄3 d 1路出局部的起始金 隨後,於鍍著區1 3 上為管狀的中空區域; 鍍著(Plating)金屬如銅、"鎳箄,。卩的起始金屬層1 2 0上 1 4 0 ,由於铲著日士八展、、而形成金屬微針頭 狀的起始金屬;ΓΠ屬列特性會對應到呈斜面 是呈斜面狀的,如金屬微針頭14〇的末端也 所示進行脫模程序,移㈣^社再者’⑯「第1 G圖」 矜針頭1 4 Ω ·印β 材料1 3 〇露出中空的金屬 U針頭1 4 0 ,取後,對矽晶圓 蜀 貫通金屬微針頭1 4 〇的穿孔丄〇 2 ◦ ^ 刻,形成 、在上述的製5中,待乾蝕刻區1 1 2的定義並不限定 在進仃濕蝕刻:珂,基本上只要在進行乾蝕刻之前進行即 可’而且’鍍著金屬的技術可以選擇性的以電鍍、I電铲 (electroless platlng)、蒸鍍(dep〇siti〇n)或濺鍍 又Page 7 V. Description of the invention (3) The area to be wet-etched after 1 1 0 is obtained, and the partial silicon wafer exposed in s 1 1 1 is further treated as a circle for wet-etched area 1 0 0 during wet etching. Wet etching, because the silicon crystal has the characteristics of a chamfered concave area x 0 in etching, and the protective layer 110 that can be formed on the bottom side is also a micro-view / second king c picture, and then the area 1 1 2; Then, for example, "the first D type" means that the initial metal layer 1 2 0 (such as chromium, nickel θ, etc.) is to be dry-etched, and a shadowing technology is applied on the top surface of the broken wafer 100, such as "1 E m ^, Called, etc.) 'Then use the micro material 1 3 0 again, and form a number of plating ^ 丄 2 0 lay a photosensitive metal layer 1 2 0, this plating area 丄 3 d 1 way out of the local starting gold and then, On the plating area 13 is a tubular hollow area; the plating metal (such as copper, " nickel 箄, etc.) is the starting metal layer 1 2 0 on 1 4 0. And forming a metal microneedle-like starting metal; the characteristics of the ΓΠ column will correspond to the bevel-like surface, as shown in the end of the metal microneedle 14o. Figure 1 G: 」Needle 1 4 Ω · Printed β material 1 3 〇 Expose a hollow metal U needle 1 4 0, and then take out a silicon wafer through a metal microneedle 1 4 〇 perforation 丄 〇 2 ◦ Carved, formed, in the above system 5, the definition of the area to be dry etched 1 1 2 is not limited to wet etching: Ke, basically as long as it is performed before dry etching 'and' plating Metal technology can optionally be electroplated, electroless platlng, vapor deposition or sputtering

S 對 putter mg)等方式達成,所以起始金屬層丄2〇並非絕 必要,同時金屬材料也可選自鎳、鐵、金、鉑、鈀、各S to putter mg), etc., so the starting metal layer 丄 20 is not absolutely necessary, and the metal material can also be selected from nickel, iron, gold, platinum, palladium, each

第8頁 200416867 五、發明說明(4) 式合金或不錄鋼。$外,以石夕晶 面狀缺凹區並不 、1〇〇上為底材形成斜 用盆他底材士 $ 特疋,亦可採用乾蝕刻方式,或是f ”射力:i 光阻等聚合物材料等= 限於上述的id具:面狀缺凹區之底材“,而且不 、/卞―體製程步驟排序。 且个 AL至於形成微針頭陣列的密度柝告丨太々曰, ,時,藉由控制待濕 ::二則在定義待濕 2區彼此間的距離來達成…見,以及待濕钱 圖」所示本創作之第二二2 A 0」至「第2 F 出待濕蝕刻區2工 “ ::’ I「第2 B圖」定義 A2 ’或控制待濕餘丄ϊ^:内經長度… 不同的距離B 2、β 2 ! 〇、2 3 〇彼此間 如「第2 F圖」所示。 P此&致不同密度的陣列, 造出出:屬微針頭之外,亦可將制 造。請參閱「第Μ母;,「: =他材質微針頭的^ =實施例是先在具有金屬微針頭7 = ^,本創作第三較 :沉積脫模層3 2 0(如鐵氟龍;,以的:晶圓3 〇 〇表 1〇及石夕晶圓300,將高^;:f金屬微針頭 :…沿金屬微丄。壓製,待熱=薄 ;微針頭3 40。因此,金二貝附’冷卻後脫模即开 一模量產製造其他材料的::;以:微 200416867 五、發明說明(5) 者,依照材料的不同,脫模方式可以利用加熱、冷卻、界 面塗層、溶劑與直接脫模等方式為之。 貳、曝光顯影製造微針頭陣列 除了上述以鍍著技術製造金屬微針頭、高分子微針頭 之外,同樣利用具有斜面狀缺凹區的矽晶圓,亦可透過曝 光模造的方式製作微針頭本體。 請參閱第4 A圖至第4 Η圖,本發明第四較佳實施例 之施行步驟為:4 Α.在矽晶圓4 0 1表面沉積蝕刻保護層 4 0 2 ; 4 Β.舖設光阻曝光顯影定義欲蝕刻區域,並蝕刻 保護層4 0 2後得到待濕蝕刻區4 0 3 ; 4 C.非等向蝕刻 (濕蝕刻)矽晶圓4 0 1得到具有斜面幾何之缺凹區 4〇4 ; 4 D.舖設非反射層(如黑色光阻)4 0 5後,舖設 犧牲層如金(或脫膜層如鐵氟龍)4 0 6 ; 4 Ε.再舖設感光 材料4 0 7 ,進行第一次曝光得到第一曝光區4 0 8 ; 4 F.進行第二次曝光得到微針頭形狀之第二曝光區 4 0 9 ; 4 G.去除犧牲層4 0 6 (或直接脫膜),得到具有 斜面幾何的底材4 1 0 ; 4 II.底材4 1 0顯影後獲得微針 頭陣列4 2 0 。 上述步驟中,非反射層4 0 5主要目的是避免感光材 料曝光時由於曝光深度不同造成過度曝光,並且非反射層 4 0 5犧牲層4 0 6 (或脫膜層)舖設先後次序可調換;而 且,也可以先進行脫模,再進行曝光顯影的步驟。 另外,舖設一層以上的感光材料,可用來改變針頭通Page 8 200416867 V. Description of the invention (4) Type alloy or non-recorded steel. In addition, it is not necessary to use Shi Xijing's surface-shaped recessed area, and to form an inclined basin on the substrate as a substrate. Special features can also be dry etching, or f "radiation: i light Polymer materials, such as resistance, etc. = limited to the above-mentioned id: the substrate of the planar recessed area ", and not, / 卞-system step ordering. And the density of the AL array forming a micro-needle array is too small, and it is said that,,, by controlling the distance to be wet: 2: the second is to define the distance between the two areas to be wet ... See, and the money to be wet chart " The second 22 A 0 of this creation is shown in the second to the second F. 2nd process of the wet etching area ":" I "Figure 2B" defines A2 "or the length of the remaining wet ^: the length of the inner warp … Different distances B 2, β 2! 〇, 2 3 〇 are shown as "2F graph". P & Arrays of different densities can be created: Beyond microneedles, they can also be manufactured. Please refer to "Mother"; "= ^ = Example of micro-needle made of other materials is to first have metal micro-needle 7 = ^, the third comparison of this creation: depositing a release layer 3 2 0 (such as Teflon; To: Wafer 300 Table 10 and Shixi Wafer 300, will be high ^ :: f metal microneedle:… along the metal micro pin. Press, wait to heat = thin; microneedle 3 40. Therefore, gold Erbei's mold is released after cooling, and one mold is mass-produced for manufacturing other materials ::; micro: 200416867 V. Description of Invention (5) According to different materials, the demoulding method can use heating, cooling, and interface coating. This method uses layers, solvents, and direct demolding. 贰. Exposing and developing microneedle arrays in addition to the metal microneedle and polymer microneedle manufactured by the above-mentioned plating technology, it also uses silicon wafers with bevel-like recesses. The microneedle body can also be made by exposure molding. Please refer to Fig. 4A to Fig. 4 (b). The execution steps of the fourth preferred embodiment of the present invention are: 4 A. Deposit on the surface of silicon wafer 401 Etching protective layer 4 0 2; 4 Β. Laying photoresist exposure and development to define the area to be etched, and etching protection After the layer 402, the area to be wet etched is 403; 4 C. The non-isotropic etching (wet etch) silicon wafer 401 is obtained with the recessed area 404 with a bevel geometry; (Such as black photoresist) After 405, lay a sacrificial layer such as gold (or a release layer such as Teflon) 4 0 6; 4 Ε. Then lay a photosensitive material 4 7 and perform the first exposure to obtain the first exposure. Area 4 0 8; 4 F. Perform a second exposure to obtain a micro-needle-shaped second exposure area 4 0 9; 4 G. Remove the sacrificial layer 4 6 (or directly remove the film) to obtain a substrate 4 with a bevel geometry 1 0; 4 II. Substrate 4 1 0 Microneedle array 4 2 0 is obtained after development. In the above steps, the non-reflective layer 4 5 is mainly used to avoid overexposure due to different exposure depth when the photosensitive material is exposed. The layer 4 0 5 sacrificial layer 4 6 (or release layer) can be changed in order of laying; moreover, it can also be demolded and then exposed and developed. In addition, laying more than one layer of photosensitive material can be used to change the needle through

第1〇頁 200416867Page 10 200416867

並可整合微流道結合形 成取血及輸送系統 詳 道的管經 述如以下 請參閱第5A圖至第5G圖 施行步驟為:5 A·蝕刻沉積有 5 0 1得到具有斜面幾何之缺 層5 0 5、犧牲層(或脫膜層) 光材料5 0 7,進行第一次曝 5C.進行第二次曝光;5d·再 舖設第二層感光材料5 1 〇 , 設一層非反射層5 1 1、舖設 行第四次曝光;5F·去除犧^ 到具有斜面幾何之底材5 2 〇 得微針頭陣列5 3 〇。 其中非反射層與犧牲層或 換’或依不同結構需要及製程 亦可以做或不做,做的話底材 有正、負光阻可供選擇。 因此’利用相近的製程, 材料’形成不同大小的流道組 管徑的控制將使針頭的應用層 設計成流道連結網路(流道5 的距離及區域的大小,將可控 利用上述方式可形成微針 何,進而製作出各種斜面組合 ’本發明第五較佳實施例之 保護層5 0 2的矽晶圓 凹區5 0 4,並舖設非反射 5〇6 ,5B.舖設第一層感 光得到第一曝光區5 0 8 ; 舖設一層非反射層5 〇 9、 進行第三次曝光;5 E.再舖 第二層感光材料512,進 層506(或直接脫膜),得 ;5 G ·底材5 2 0顯影後獲 脫膜層舖設先後順序可調 需要而省略,而第二次曝光 較堅固;另外,感光材料也 可組合堆疊一層以上的光陴 合(流道5 a、5 b ),不同 面更廣;或是作為儲存區及 3 ) ’而定義蝕刻區域之間 制斜面針頭的的疏密。 頭斜面底材上的各種斜面幾 的被陣列針頭,如單斜面It can be integrated with a microfluidic channel to form a detailed blood collection and delivery system. The detailed description is as follows. Please refer to Figures 5A to 5G. The execution steps are: 5 A · Etching and depositing 5 0 1 to obtain a missing layer with a bevel geometry. 5 0 5, sacrificial layer (or release layer) light material 5 0 7 for the first exposure 5C. For the second exposure; 5d · lay a second layer of photosensitive material 5 1 0, a non-reflective layer 5 1 1. The fourth exposure of the laying line; 5F · Removal of the substrate to the substrate 5 2 with a bevel geometry yields a microneedle array 5 3 〇. Among them, the non-reflective layer and the sacrificial layer can be replaced or different according to different structural requirements and processes. The substrate can be made with positive or negative photoresistance. Therefore, 'using similar processes and materials' to form different sizes of flow channel groups. The control of the tube diameter will make the application layer of the needle be a flow channel connection network (the distance of flow channel 5 and the size of the area, which can be controlled using the above method) The microneedle can be formed, and then various bevel combinations can be produced. The silicon wafer recessed area 5 0 4 of the protective layer 5 2 of the fifth preferred embodiment of the present invention is laid with non-reflective 5 06 and 5B. Layer photosensitivity to obtain the first exposure area 508; laying a non-reflective layer 509, and performing a third exposure; 5 E. then lay a second layer of photosensitive material 512, enter the layer 506 (or directly remove the film), get; 5 G · Substrate 5 2 0 After development, the release layer can be adjusted in sequence and omitted, and the second exposure is more robust; In addition, the photosensitive material can also be stacked and stacked in more than one layer (flow channel 5 a , 5 b), different faces are wider; or as the storage area and 3) ', define the density of the beveled needles between the etched areas. Various beveled needles on the bevel substrate, such as single bevel

第11頁 200416867 五、發明說明(7) (如「第6圖」A) 式的斜面(如「第 雙斜面(如厂第7圖 圖」B、C等)。 A) 或是其他形 參、微加工 請參閱 六較佳實施 沉積保護層 蝕刻矽晶圓 8 D ·舖設犧 塑性材料6 6 0 7,而 理(定義流 中塑性材料 用雷射加工 射出成型。 以上所 以限定本發 本發明之精 於本發明之 技術製造微針頭陣列 「第8A圖」至「第8η圖 币 例,其施行步驟為·· 8 ^所揭露之本發明第 6〇2 ; 8B.定義出待=梦晶圓6〇1表面 …得到具有斜4=刻區603 ; 8C. 牲層605(或脫膜層^可^缺凹區604 ; 〇 6進行壓模,形成具有斜面幾8F·、8G.以 =除犧牲層6 0 5 (或 Ί才 =是熱=或^ 、崎;而得到底材 述者,僅為本發明較佳之實施例而已" 明貫施之範圍;任何熟習此技藝 亚非用 專利=所作之均等變化與修飾,皆應涵蓋Page 11 200416867 V. Explanation of the invention (7) (such as "Figure 6" A) The slope of the formula (such as "the second double slope (such as the factory Figure 7" B, C, etc.). A) or other formal parameters For micro-machining, please refer to Six Best Practices for Depositing a Protective Layer to Etch a Silicon Wafer 8 D · Laying a sacrificial plastic material 6 6 0 7 and arranging (defining a plastic material in the flow using laser processing for injection molding. The above limits the present invention Proven in manufacturing microneedle arrays "Figure 8A" to "Figure 8η" using the techniques of the present invention, the execution steps are as follows: 8 ^ The present invention disclosed in No. 602; 8B. Definition is waiting = Mengjing The surface of the circle 601 is obtained with a slope of 4 = the engraved area 603; 8C. The animal layer 605 (or the release layer ^ may ^ the recessed area 604; 〇6) is stamped to form a slope 8F ·, 8G. With = In addition to the sacrificial layer 6 0 5 (or Ί 才 = 是 热 = or ^, 崎, and obtained the substrate description, it is only the preferred embodiment of the present invention " the scope of Ming Guan Shi; anyone familiar with this technique Patents = equal changes and modifications made, all should be covered

第12頁 200416867 圖式簡單說明 第 1 A 圖 至 第 1 Η 圖 係 本 發 明 第 一 較 佳 實 施 例 之 製 造 流: 程 圖 第 2 A 圖 至 第 2 F 圖 係 本 發 明 第 --- 較 佳 實 施 例 之 製 造 流 程 圖 5 第 3 A 圖 至 第 3 C 圖 係 本 發 明 第 --- 較 佳 實 施 例 之 製 造 流 程 圖 第 4 A 圖 至 第 4 Η 圖 係 本 發 明 第 四 較 佳 實 施 例 之 製 造 流 程 圖 1 第 5 A 圖 至 第 5 G 圖 係 本 發 明 第 五 較 佳 實 施 例 之 製 造 流 程 圖 , 第 6 圖 第 7 圖 係 本 發 明 之 斜 面 狀 缺 凹 區 形 狀 與 可 獲 得 各 種 微 針 頭 形 狀 對 昭 圖 及 第 8 A 圖 至 第 8 Η 圖 係 本發 明 第 六 較 佳 實 施 例 之 製 造 流 程 圖 〇 [ 圖 式 符 號 說 明 ] 1 0 0 矽 晶 圓 1 0 1 缺 凹 區 1 0 2 穿 孔 1 1 〇 保 護 層 1 1 1 待 濕 刻 1 1 2 待 乾 4k 刻 區 1 2 0 起 始 金 屬 層 1 3 〇 感 光 材 料 1 3 1 鐘 著 區 1 4 〇 金 屬 微 針 頭 2 1 0 ik 刻 區 2 2 0 %k 刻 區 2 3 〇 刻 區 3 0 0 矽 晶 圓 3 1 〇 金 .屬 微 針 頭 3 2 0 脫 模 層 3 3 0 埶 y、'、 ‘塑 性 薄 膜 3 4 0 微 針 頭Page 12 200416867 The diagram is a brief description of diagrams 1 A to 1 Η The diagram is the manufacturing flow of the first preferred embodiment of the present invention: Process diagrams 2 A to 2 F diagrams are the first of the present invention. The manufacturing flowchart of the embodiment 5 Figures 3A to 3C are the manufacturing flowchart of the preferred embodiment of the present invention. Figures 4A to 4C are the fourth preferred embodiment of the present invention. Manufacturing flow chart 1 Figures 5A to 5G are manufacturing flowcharts of the fifth preferred embodiment of the present invention. Figures 6 and 7 are the shapes of the bevel-shaped recessed areas of the present invention and various microneedle shapes can be obtained. Figures from Zhao and Figure 8A to Figure 8 are the manufacturing flowchart of the sixth preferred embodiment of the present invention. [Illustration of Symbols] 1 0 0 Silicon wafer 1 0 1 Notched area 1 0 2 Perforation 1 1 〇 Protective layer 1 1 1 To be wet etched 1 1 2 To be dried 4k engraved area 1 2 0 Starting metal layer 1 3 〇 Photosensitive material 1 3 1 Bell area 1 4 〇 Metal microneedle 2 1 0 ik engraved area 2 2 0% k engraved area 2 3 〇 engraved area 3 0 0 silicon wafer 3 1 〇 gold. Belongs to microneedle 3 2 0 release layer 3 3 0 埶 y, ',' Plastic film 3 4 0 microneedle

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200416867200416867

圖式簡單說明 4 0 1 矽 晶 圓 4 0 2 保 護 層 4 0 3 待 ik 刻 區 4 0 4 缺 凹 區 4 0 5 非 反 射 層 4 0 6 犧 牲 層 4 0 7 感 光 材 料 4 〇 8 第 — 曝 光 區 4 0 9 第 二 曝 光 區 4 1 0 底 材 4 2 0 微 針 頭 陣 列 5 0 1 矽 晶 圓 5 0 2 保 護 層 5 0 4 缺 凹 區 5 0 5 非 反 射 層 5 0 6 犧 牲 層 5 0 7 感 光 材 料 5 0 8 第 - 曝 光 區 5 0 9 非 反 射 層 5 1 0 感 光 材 料 5 1 1 非 反 射 層 5 1 2 感 光 材 料 5 2 〇 底 材 5 3 〇 微 針 頭 陣 列 5 a 、 ^ 5 b、 5 C 流 道 6 〇 1 矽 晶 圓 6 0 2 保 護 層 6 0 3 待 濕 刻 區 6 〇 4 缺 凹 區 6 〇 5 犧 牲 層 6 〇 6 塑 性 材 料 6 〇 7 底 材 6 1 〇 微 針 頭 陣 列 6 a 、 6b 流道Brief description of the figure 4 0 1 Silicon wafer 4 0 2 Protective layer 4 0 3 Ik etched area 4 0 4 Notch area 4 0 5 Non-reflective layer 4 0 6 Sacrificial layer 4 0 7 Photosensitive material 4 〇8 — Exposure Area 4 0 9 Second exposure area 4 1 0 Substrate 4 2 0 Microneedle array 5 0 1 Silicon wafer 5 0 2 Protective layer 5 0 4 Notch area 5 0 5 Non-reflective layer 5 0 6 Sacrificial layer 5 0 7 Photosensitive material 5 0 8th-exposure area 5 0 9 Non-reflective layer 5 1 0 Photosensitive material 5 1 1 Non-reflective layer 5 1 2 Photosensitive material 5 2 〇Substrate 5 3 〇Microneedle array 5 a ^ 5 b, 5 C Channel 6 〇1 Silicon wafer 6 0 2 Protective layer 6 0 3 Area to be wet-etched 6 〇4 Notched area 6 〇5 Sacrificial layer 6 〇6 Plastic material 6 〇7 Substrate 6 1 〇Microneedle array 6 a , 6b runner

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Claims (1)

200416867 六、申請專利範圍 1 · 一種微針頭陣列製造方法,包含以下步驟: 在一石夕晶圓表面沉積一保護層; 定義出複數待濕蝕刻區; I虫刻該石夕晶圓得到具有斜面幾何之複數缺凹 區,及 利用該缺凹區進行一後續加工以得到一微針頭 陣歹lj 。 2 · 如申請專利範圍第1項所述微針頭陣列製造方法, 其中該後續加工係選自電鍍、曝光顯影與微加工的 群組組合其中之一。 3 · 如申請專利範圍第1項所述微針頭陣列製造方法, 其中該矽晶圓係置換為一壓克力材料(PMMA),並透 過雷射加工方式獲得具斜面幾何之該缺凹區。 4。 如申請專利範圍第1項所述微針頭陣列製造方法, 其中該矽晶圓係置換為一光阻材料,並透過傾斜曝 光顯影方式獲得具斜面幾何之該缺凹區。 5 · 如申請專利範圍第1項所述微針頭陣列製造方法, 其中該微針頭陣列中任一微針頭之端面係局部或全 部成斜面狀。 6 · 如申請專利範圍第1項所述微針頭陣列製造方法, 其中該後續加工更包含以下步驟; 以微影(Π thogr aphy )方式舖設一感光材料於 該石夕晶圓上,並形成一缺凹之鍛者區; 鍍著一金屬於該鍍著區以形成複數金屬微針200416867 VI. Scope of patent application1. A method for manufacturing a microneedle array, including the following steps: depositing a protective layer on the surface of a stone wafer; defining a plurality of areas to be wet-etched; A plurality of recessed areas, and a subsequent processing is performed using the recessed areas to obtain a microneedle array 歹 lj. 2. The method of manufacturing a microneedle array as described in item 1 of the scope of patent application, wherein the subsequent processing is selected from one of a group combination of electroplating, exposure development, and micromachining. 3. The microneedle array manufacturing method as described in item 1 of the scope of the patent application, wherein the silicon wafer is replaced with an acrylic material (PMMA), and the notched region with a bevel geometry is obtained by laser processing. 4. According to the method for manufacturing a microneedle array as described in item 1 of the scope of the patent application, wherein the silicon wafer is replaced with a photoresist material, and the recessed area with a bevel geometry is obtained by oblique exposure development. 5. The method for manufacturing a microneedle array as described in item 1 of the scope of the patent application, wherein the end surface of any microneedle in the microneedle array is partially or entirely inclined. 6. The microneedle array manufacturing method according to item 1 of the scope of patent application, wherein the subsequent processing further includes the following steps; a photosensitive material is laid on the Shi Xi wafer in a lithography (Π thogr aphy) manner, and a Notched forged area; a metal plated on the plated area to form a plurality of metal microneedles 第15頁 200416867 六、申請專利範圍 頭;及 7 8 9 〇 2 移除該感光材料以露出中空之該金屬微針頭; 針頭乾摩機以獲得複數穿孔貫通該金屬微 如申請專利範圍第6項所述微針頭陣列制& 其中該斜面狀缺凹區形成後係先進 ^迈方法, 屬層於該矽晶圓上之步驟,且該 『』:起始金 之該起始金屬層。 ^鍍者£係暴露局部 如申請專利範圍第6項所述微針頭陣 其中鍍著該金屬之方式係選自電:化方去, (electroless platlng)、蒸鍍(二的⑴鍍 鍍(sputtering)的群組組合其中之—。〇n)或濺 如申請專利範圍第6項所述微針頭° 其中該金屬係選自銅、鉻、鎳、鐵、八&方法, 純金屬及其合金與不銹鋼的群鉑、鈀之項所述微針頭“匕一方法, !加工、㈣(ef g)與微影的群 :Vi Ϊ I: I第6項:述微針頭陣列製造方法, /、甲災G a U具有該金屬微針頭之 具製造複數微針頭之步驟。 Μ夕曰曰®作為模 申月專利%圍第丄丄項所述微針頭陣列製造方Page 15 200416867 VI. Patent application head; and 7 8 9 〇 2 remove the photosensitive material to expose the hollow metal microneedle; dry the needle to rub the machine to obtain a plurality of perforations through the metal micro as in the scope of patent application No. 6 The microneedle array system & wherein the bevel-shaped recessed area is formed by an advanced method, which is a step of layering on the silicon wafer, and the "": the starting metal layer of starting gold. ^ Plating person is exposed in the microneedle array as described in item 6 of the scope of the patent application. The method of plating the metal is selected from the group consisting of electroless platlng, vapor deposition (sputtering) ) In one of the group combinations—.n) or splashing the microneedle as described in item 6 of the scope of the patent application, wherein the metal is selected from copper, chromium, nickel, iron, eight & methods, pure metals and their alloys The method of micro-needle described in the terms of group platinum and palladium of stainless steel, processing, ef g and group of lithography: Vi Ϊ I: I Item 6: the method of manufacturing the micro-needle array, Jiayu G a U has the metal microneedles with the steps of manufacturing multiple microneedles. Μ 夕 曰 ® as the manufacturer of the microneedle array described in the item% of the patent application. 第16頁 200416867 六、申請專利範圍 法,其中製造該微針頭之方气:' 微熱壓成形的群組組合其中12選自微射出成型與 '如申請專利範圍第1項所述Μ 一。 一 其中該後續加工更包含以;頭陣列製造方法, 舖設一非反射層與一犧ς二於 舖設一感光材料; "讀矽晶圓上; 進行曝光使該感光材料 之一曝光區; ν彳政針頭陣列形狀 去除該犧牲層,得到一具 將該底材顯影以獲得— 」面幾何之底材; .如申請專利範圍帛i 3項所=頭陣列。 法’其中舖設該感光材料的二::十:陣列製造方 犧牲層,再對獲得之該底材;;f後,係先去除該 如申請專利範圍第i 仃*光及顯影。 法,其中該犧牲層陣列製造* ΐ申=;;;以項所述微針二車列製造方 步驟,使料並進行曝光之 流道連結::::内徑變化,或作 其中;圍第1項所述微針頭陣列製造方法, r β後續加工更包含以下 舖設—犧牲層於該矽晶圓上; 以一塑性材料進行壓模; 除。亥犧牲層’得到一具有斜面幾何之底材; 3 4 5 6 7 第17頁 200416867 六、申請專利範圍 進行一微加工處理 8 .Γ1Τ範圍第κ項:=微針頭陣列。 法,/、中該犧牲層係置換 旋針碩陣列製造方 如申請專利範圍第丄7 ^為、—脫模層。 法’其中該塑性材料係選:2針頭陣列製造方 料的群組組合其中之一。…、固性材料與熱塑性材 Ϊ申ΐί利範圍第17項所述微針 '/、中以該塑性材料進行犀槎、碩陣列製造方 將該塑性材料射出成型之步ς 、之步驟,係置換為 如申請專利範圍第丄7項所述 法,其中該微加工處理係選自〜十碩陣列製造方 組組合其中之一。 田射加工與蝕刻的群 一種微針頭陣列製造方法,包 濕蝕刻一表面具有一保護層 :ν私· 一斜面狀缺凹區; 夕晶圓,以形成 以微影(lithography)方式舖 該矽晶圓上,並形成一缺凹之鍍著區感先材枓於 頭,H屬於該M著區^成i數金屬微針 及移除該感光材料以露出中》之該金屬微針頭; 針頭乾飯刻該石夕晶圓以獲得複數穿孔貫通該金屬微 如申請專利範圍第2 2項所述微針頭陣列製造方 1R 4 4 7 圓係置換為一壓克力材料(PMMA), 方式獲得具斜面幾何之該缺凹區。 第2 2項所述微針頭陣列製造方 圓係置換為一光阻材料,並透過雷 光顯影方式獲得具斜面幾何之該缺 第2 2項所述微針頭陣列製造方 微針頭之端面係局部或全部成斜面 第2 2項 狀缺凹區 晶圓上之 屬層。 第2 2項 金屬之方 1 a t i ng) 所述微針頭陣列製造方 形成後係先進行沉積一起 步驟,且該鍍著區係暴露 所述微針頭陣列製造方 式係選自電鑛、無電鍵 蒸鍛(deposition)或濺 所述微針頭陣列製造方 、鉻、鎳、鐵、金、鉑 銹鋼的群組組合其中之 法’其中該矽晶 並透過雷射加工 如申請專利範圍 法’其中該矽晶 射加工或傾斜曝 凹區。 如申請專利範圍 法,其中該金屬 狀。 如申請專利範圍 法,其中該斜面 始金屬層於該石夕 局部之該起始金 如申請專利範圍 法,其中鍍著該 (electroless p 鍍(sputter i ng) 如申請專利範圍 法,其中該金屬 鈀之純金屬及其 的群組組合其中之 第2 2項 係選自銅 合金與不 9 .如申請專利範圍第2 2項所述微針頭陣列製造方 法’其中移除該感光#料及獲得該穿孔之_ 自雷射加工、蝕刻(etching)與微影的群組組合其Page 16 200416867 VI. Patent application method, in which the method of manufacturing the microneedles is: 'Micro hot press forming group combination 12 of which are selected from micro injection molding and' as described in item 1 of the patent application range. One of the subsequent processes further includes: a head array manufacturing method, laying a non-reflective layer and a sacrificial layer instead of laying a photosensitive material; " reading on a silicon wafer; performing exposure to expose an exposed area of the photosensitive material; v The sacrifice layer was removed in the shape of a needle array, and a substrate was developed by developing the substrate to obtain a surface geometry; as described in the scope of patent application, item 3 of the patent = head array. In the method, two of the photosensitive materials are laid: ten: the array manufacturer sacrifices the layer, and then the substrate is obtained; after f, the light is removed first as described in the patent application scope i 仃 * Light and development. Method, in which the sacrificial layer array is manufactured * ΐ 申 = ;;; according to the microneedle two-car train manufacturing steps described in the item, the material is exposed and the flow channel is connected :::: the inner diameter is changed, or it is included; The manufacturing method of the microneedle array according to the first item, the r β subsequent processing further includes the following laying-sacrifice layer on the silicon wafer; pressing with a plastic material; and removing. The sacrificial layer ′ obtains a substrate with a bevel geometry; 3 4 5 6 7 page 17 200416867 6. Patent application scope Perform a micro-processing 8 .Γ1T scope item κ: = microneedle array. The method, /, the sacrificial layer is replaced by the manufacturing method of the spin-pin master array. The method is one in which the plastic material is selected: a group combination of 2 needle array manufacturing materials. …, The solid materials and thermoplastic materials are described in the scope of claim 17 of the microneedle '/, the plastic material is used for rhinoceros, the array manufacturing step of the plastic material injection molding step, the steps are Replaced by the method described in item 27 of the scope of the patent application, wherein the micro-machining treatment is selected from one of the group consisting of ~ Shishuo array manufacturing squares. A method for manufacturing a microneedle array by field shooting and etching, including wet etching on a surface with a protective layer: ν privacy · a bevel-shaped recessed area; a wafer to form the silicon by lithography On the wafer, a recessed plated area is formed on the head. H belongs to the M area. The metal microneedles are removed and the photosensitive material is removed to expose the metal microneedles. Dry rice engraving the Shixi wafer to obtain a plurality of perforations through the metal micro. The microneedle array manufacturer 1R 4 4 7 as described in the patent application scope No. 22 was replaced with an acrylic material (PMMA). The notch area of the bevel geometry. The square circle of the microneedle array manufacturing item described in item 22 is replaced with a photoresist material, and the lack of bevel geometry is obtained through the development of the light. The end surface of the microneedle array manufacturing microneedle item described in item 22 is part or all. Layers on wafers with beveled recesses 2-22. Item 2 of the 2nd metal formula 1 ati ng) After the microneedle array manufacturing method is formed, a deposition step is performed first, and the plating area is exposed. The manufacturing method of the microneedle array is selected from the group consisting of electric ore and non-electric bond steaming. Forging (deposition) or sputtering the microneedle array manufacturing method, chromium, nickel, iron, gold, platinum rust steel group combination of the method 'wherein the silicon crystal and through laser processing as in the patent application method'wherein Silicon crystal processing or tilting exposed areas. Such as the patent application method, where the metal is shaped. For example, the scope of patent application method, where the starting metal layer of the bevel is on the part of the stone evening, such as the scope of patent application method, where electroless p plating (sputter i ng) is applied. The pure metal of palladium and its group combination, the second item 2 is selected from copper alloy and no. 9) The method for manufacturing a microneedle array as described in the second patent application item No. 22, wherein the photosensitive material is removed and the Perforation _ group combination of laser processing, etching and lithography 2〇〇416867 六 申請專利範 圍 中之 0 如申請專利範圍第2 2工 法,其中更包含以具有兮所述微針頭陣列製造方 為模具製造複數微針頭=金屬微針頭之該矽晶_抒 如申請專利範圍第^ 、 步驟。 法,其中製造該微針頭夕、士,妓針頭陣列製造方 、士丄” 微射出成炎 4 法,其中製造該微針頭之=述微針 微熱壓成形的群組組合其式係選 •一種微針頭陣列製造方去 之了。 濕#刻一表面具右二:包含以下步驟 一斜面狀缺凹區; 呆5蔓層之矽晶圓 舖设一非反射層與一 · 舖設一感光材料; s於該矽晶圓上; 進行曝光使該感光姑袓 / 之一曝光區; ”形成微針頭陣列衫 去除該犧牲層,得到一星 ;將該底材顯影以獲得_微針頭:口何之底* 法,其中該石夕晶圓係置換為斤靡 甘读、ft + μ 4 丁古4 壓克力材料(ΡΜΜΑ), 亚透過由射加工方式獲得具斜 .如申請專利範圍第3 2項所沭《 # 法,其中該石夕晶圓係陣列製造* 射加工或傾斜曝光顯影方式养料,並透過雷 凹區。 、如方式獲侍具斜面幾何之該缺 .如申請專利範圍第3 2項所述微針頭陣列製造方 以 # 成 第20頁 200416867 申凊專利範圍 ^丄其中該微針頭陣列中任一微 或全部成斜面狀。 τ頌之知面係A 6 如申晴專利範圍第3 2項所述微# 法,其中舖-,:ϋί針頭陣列製造^ 犧牲層,再對獲得之該底材進行曝光及雜Ϊ 法= 微針頭陣列製造方 光、顯的步驟之後,係先進行 申項所述微針頭陣列製造方 具中6亥犧牲層係置換為一脫模属。 • tu:範圍第3 2項所述微針二 法’其中更包含重複舖設該感光」::: t驟,使該微針頭陣列之流道具有内禋::^ 為一儲存區或一流道連結網路之用"又,5 ‘-製造方法,包含以;步驟: 激蝕刻一表面具有一保護層之 一斜面狀缺凹區; 日日5],以形 舖設一犧牲層於該矽晶圓上; 以一塑性材料進行壓模; 去除該犧牲層,得到一具有 進行一微加工處理,以赛得二何之底材 •如申杜I釗r n筮 又寸—喊針頭陣列。 ::! 40項所述微針頭陣列f迭方 法,其中該矽晶圓係置換為一壓:歹j衣&方 並透過雷射加工方式彳被得^ ^力材料(pmma) &侍具斜面幾何之該缺凹區 部 該 7 曝 8 之 作 4 0 成 4 200416867 六、申請專利範圍 4 2 ·如申請專利範圍第4 〇項 法,其中該矽晶圓係置換為二=針碩陣列製造方 射加工或傾斜曝光顯影方式獲得I 坐亚透過雷 凹區。 〃、斜面成何之該缺 $申請專利範圍第4 〇項所述微針頭 制生 法,其中該微針頭陣列中任一' 衣乂方 或全部成斜面狀。 "五、之纟而面係局部 如申請專利範圍第4 〇項所述微 法,其中該犧牲層係置換為一脫模層車歹]衣乂方 如申請專利範圍第4 0項所述微針頭陣列制 法,其t該塑性材料係選自熱固性== 料的群組組合其中之一。 珂討舁熱塑性材 如申請專利範圍第4 〇頊所述微針頭陣列製造方 法,其中以該塑性材料進行壓模之步驟, 將該塑性材料射出成型之少驟。 换為 如申請專利範圍第4 〇頊所述微針頭陣列製造方 法,其中該微加工處理係選自雷射加工與蝕刻的群 組組合其中之一。 4 4 4 4 5 4 6 4 70〇416867 Six of the scope of the patent application, such as the 22 method of the scope of patent application, which further includes manufacturing a plurality of microneedles = metal microneedles using the microneedle array manufacturing method as a mold. Steps ^ and。 of the scope of patent application. Method, in which the microneedles are manufactured, and the prostitute needle array manufacturing method, Shijiao ”is micro-injected into inflammation. 4 methods, in which the microneedles are manufactured by the micro-needle micro-hot-pressing group combination. The microneedle array manufacturing method is gone. Wet #carved one surface with the second right: it includes the following steps: a bevel-shaped recessed area; a silicon wafer with 5 layers is laid with a non-reflective layer and a photosensitive material; s on the silicon wafer; perform exposure to make the photosensitive area / one of the exposure area; "form a micro-needle array shirt to remove the sacrificial layer to get a star; develop the substrate to obtain _ micro-needle: 口 何 之Bottom * method, in which the Shixi wafer system is replaced by Jin Mi Gan reading, ft + μ 4 Dinggu 4 acrylic material (PMMA), obtained obliquely by injection processing. For example, the scope of application for patent 3 2 The method of "#", in which the Shi Xi wafer system array is manufactured by a radiation processing method or an oblique exposure development method, and passes through the sunken area. The defect of the bevel geometry of the service tool is obtained by the way. As described in item 32 of the patent application scope, the manufacturer of the microneedle array is # 20, page 20, 200416867, and the patent scope is ^ 丄. All are beveled. The τ song's knowledge is A 6 as described in the No. 32 item of Shen Qing's patent scope. The micro- # method is described below, in which the needle array is used to make a ^ sacrificial layer, and then the obtained substrate is exposed and mixed. After the steps of manufacturing the light and display of the microneedle array, the first step is to replace the sacrifice layer in the microneedle array manufacturing square tool with a demolding genus. • tu: The micro-needle two method described in item 32 of the scope 'which further includes repeatedly laying the photosensitivity "::: t step, so that the flow channel of the micro-needle array has internal 禋:: ^ is a storage area or a first-level channel The use of connection network " Another 5'-manufacturing method includes the steps of: etching a surface with a bevel-like recessed area with a protective layer; day 5], laying a sacrificial layer in the shape of the silicon On the wafer; compression molding with a plastic material; removing the sacrificial layer to obtain a substrate with a micro-machining process to get the second place. ::! The microneedle array stacking method described in item 40, wherein the silicon wafer system is replaced with a single press: 歹 j 衣 & square and obtained by laser processing ^ ^ force material (pmma) & The recessed area with bevel geometry, the 7 exposed 8 work, 40% 4 200416867 6. Patent application scope 4 2 · If the patent application scope No. 40 method, where the silicon wafer is replaced by two = needle master Array manufacturing process or oblique exposure development method to obtain I-Zia transmission through the concave area. (2) What is the lack of the inclined plane? The microneedle production method described in item 40 of the patent application scope, wherein any or all of the microneedle arrays are inclined plane. " Fifth, the details are partly described in the micro-method described in item 40 of the patent application scope, wherein the sacrificial layer is replaced with a release layer car.] The clothing party is as described in item 40 of the patent application scope. In the microneedle array manufacturing method, the plastic material is one selected from the group consisting of thermosetting materials. Kelvin thermoplastic material The microneedle array manufacturing method described in the patent application scope No. 40, wherein the plastic material is subjected to the step of compression molding, and the plastic material is injection-molded in a few steps. It is replaced with the microneedle array manufacturing method as described in the patent application No. 40, wherein the micro-processing is selected from one of a group combination of laser processing and etching. 4 4 4 4 5 4 6 4 7
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