TW200416867A - Method of fabrication for hollow microneedle array - Google Patents
Method of fabrication for hollow microneedle array Download PDFInfo
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- TW200416867A TW200416867A TW092103315A TW92103315A TW200416867A TW 200416867 A TW200416867 A TW 200416867A TW 092103315 A TW092103315 A TW 092103315A TW 92103315 A TW92103315 A TW 92103315A TW 200416867 A TW200416867 A TW 200416867A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 16
- 238000007747 plating Methods 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 61
- 235000012431 wafers Nutrition 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 13
- 239000004033 plastic Substances 0.000 claims description 11
- 229920003023 plastic Polymers 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005459 micromachining Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 230000036211 photosensitivity Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims 3
- 238000000748 compression moulding Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 2
- 239000012815 thermoplastic material Substances 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 206010061218 Inflammation Diseases 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 241000282806 Rhinoceros Species 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 238000005242 forging Methods 0.000 claims 1
- 238000007731 hot pressing Methods 0.000 claims 1
- 230000004054 inflammatory process Effects 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 238000000520 microinjection Methods 0.000 claims 1
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- 238000003672 processing method Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 238000005070 sampling Methods 0.000 abstract description 2
- 239000003814 drug Substances 0.000 abstract 1
- 229940079593 drug Drugs 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 241000755266 Kathetostoma giganteum Species 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61M—DEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
- A61M37/00—Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin
- A61M37/0015—Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin by using microneedles
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61M—DEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
- A61M37/00—Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin
- A61M37/0015—Other apparatus for introducing media into the body; Percutany, i.e. introducing medicines into the body by diffusion through the skin by using microneedles
- A61M2037/0053—Methods for producing microneedles
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Dermatology (AREA)
- Medical Informatics (AREA)
- Anesthesiology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Hematology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Micromachines (AREA)
Abstract
Description
200416867 五、發明說明(l) 發明所屬之技術領域」 特別ί ΐ明ί關於—種微針頭(mlcroneedle)之製造方法, 特別疋種端頭呈斜面狀的中空微針頭陣列(h〇llow microneedle array)之製造方法。 【先前技術】 认 r I 空微針頭陣列(h〇U〇w microneedle array)卢 於採血糸統、微量採樣與荜 y)廣泛運用 料可區分為半導體材料 ^ / 、專生西項或,其類型依材 s T ¥體材枓、南分子材料及金屬。 目别以半導體材料製造中 主,在相關的專利前宰句拓wnno+頭陣列夕+以矽晶圓為 圆_65 等案件 5 、麵17 9 8 5、 蝕刻於薄膜沉積步驟,二衣广由於^ 長,以致產能不峨口 ::造程序上較為繁雜且需時漫 重。 “成本亦無法降低,量產之路困難重 另外,部分製程製# φ US6334856,其流道寬度°是^疋錐形針頭,相關前案如 的,在兼顧内徑和結構強根部向末端漸次縮小 提高陣列的密度’造成採:不足:::此=十,往無法 應用上,由於管徑逐漸縮小 士 、 通 或疋在樂物注射的 高驅動功率,相對而言拉高了:阻增大,因此根部端必須提 至於較常見的平頭型微^備成本。 入侵撓性的生物組織,相對來^、’則因為尖銳度不足,不易 否則在勉強”的情形下會有Ϊ⑶備更高的結構強度, 【發明内容】 之虞200416867 V. Description of the invention (l) The technical field to which the invention belongs "In particular, ΐ 明 ί: A method for manufacturing a kind of microneedle (mlcroneedle), especially a kind of hollow microneedle array with a slanted tip ) 的 制造 方法。 Manufacturing method. [Prior technology] Recognized r i empty microneedle array (h〇U〇w microneedle array) Lu Yu blood collection system, micro sampling and 荜 y) widely used materials can be divided into semiconductor materials ^ /, professional students or Type by material s T ¥ body material 枓, southern molecular material and metal. In the field of semiconductor material manufacturing, in the relevant patents, it is said that before the related patents, extension wnno + head array evening + silicon wafer as a circle _65 and other cases 5, surface 17 9 8 5, etching in the thin film deposition step, Eryi Guang due to ^ Long so that the production capacity is not so impressive :: The manufacturing process is complicated and takes a long time. "The cost cannot be reduced, and the road to mass production is difficult. In addition, part of the process system # φ US6334856, the width of the flow channel ° is a conical needle, as in the previous case, the inner diameter and the strong root of the structure are gradually taken to the end. Shrinking and increasing the density of the array 'causes: Insufficient ::: This = ten, can not be applied, due to the gradual shrinking of the pipe diameter, high driving power of the injection of fun, or thorium, which is relatively high: resistance increase Large, so the root end must be raised to the more common flat-head micro-preparation costs. Invasion of flexible biological tissues, relatively, ^, 'because of the lack of sharpness, it is not easy, otherwise there will be a marginal "situation. Structural strength, [Summary of the invention]
200416867 五、發明說明(2) 本創作欲解決之技術問題,羽山 程的外型、結構強度受限於穿 I二狭镟針頭陣列製 製程::亦過於繁雜,無法達到量;的合』,現有的 列製造方;,本發明所提供的微針頭陣 後利用此-斜圓=斜面狀的缺凹區 '然 影或微加工等方式,來製造微:;;;鐘著金屬、曝光顯 本發明所達成之# 4 ^ ' 頭陣列,此微針頭不:能以簡易製程製造出微針 入生物組織,亦可作Af而壬斜面狀、具有銳角而易於侵 【實施方】】T作為翻模複製其他材質的微針頭陣列。 :’:明所提供的微針頭 上(如石夕晶圓、壓克力或光 =f主要事先在底材 子,後續進行纪著=用此缺凹區的斜面幾何作為形狀因 迕且右牡:I 金屬、曝光顯影或微加工等方六、,爽制 k具有斜面端頭的微針頭陣列。 寺方式,來製 壹、鍍著金屬製造微針頭陣列 請參閱「第1 A圖」至「當n u θ 佳實施例所提供料 弟1 Η圖」,本發明第一較 驟來完成: 列步 ㈣針碩陣列之製造方法,是藉由下 首先在一塊石夕晶圓彳 1 1 〇(如氮化妙(Sl3N4n 〇的「上下表面舖設保護層 圖」铺設光阻曝如第1 A圖」’「謂 、疋我$人钱刻區域,並蚀刻保護層200416867 V. Description of the invention (2) The technical problems to be solved in this creation, the appearance and structural strength of Yushan Cheng are limited by the two-narrow narrow needle array manufacturing process: It is too complicated to achieve the quantity; Existing column manufacturers; After the microneedle array provided by the present invention, this method-oblique circle = bevel-shaped recessed area 'random shadow or micromachining, is used to produce micro: ;; The # 4 ^ 'head array achieved by the present invention, this microneedle does not: can be used to make microneedles into biological tissues in a simple process, but also can be used as Af and bevel-shaped, with acute angles and easy to invade [Implementation] T as Turn the mold to copy the microneedle array of other materials. : ': On the microneedles provided by Ming (such as Shixi wafer, acrylic or light = f is mainly on the substrate in advance, and subsequent follow-up = use the bevel geometry of this recessed area as the shape and right M: I metal, exposure, development, or micromachining, etc. Six, micro-needle arrays with beveled ends are made in a temple. To make one, metal-plated micro-needle arrays, please refer to "Figure 1A" to "When nu θ is provided in the preferred embodiment, the first step of the invention" is completed in the first step of the present invention: The manufacturing method of the step-by-step pin and pin array is firstly performed on a Shixi wafer by 1 1 〇 (Such as Niu Niu (Sl3N4n 0 "layout of the protective layer on the upper and lower surfaces" laying photoresist as shown in Figure 1A "" ", said, slashed the area and etched the protective layer
第7頁 五、發明說明(3) 1 1 0後得到待濕蝕刻區 、,、 s 1 1 1中露出的局部矽晶圓 亚進而對待濕蝕刻區 圓1 0 0在濕蝕刻時所展現予濕蝕刻,由於矽晶 成具有斜面幾何之缺凹區x 0 i n性蝕刻的特性,而可形 在底侧的保護層110同樣以微景/二第王c圖」,然後 區1 1 2 ;而後,如「第1 D 式’疋義出待乾蝕刻 設起始金屬層1 2 0(如鉻、鎳θ、」在碎晶圓1 0 0頂面舖 影技術,如「第1 E m ^ , 叫等)’繼而再次利用微 材料1 3 0,並形成數個鍍 ^丄2 〇上舖設感光 屬層1 2 0 ,此鍍著區丄3 d 1路出局部的起始金 隨後,於鍍著區1 3 上為管狀的中空區域; 鍍著(Plating)金屬如銅、"鎳箄,。卩的起始金屬層1 2 0上 1 4 0 ,由於铲著日士八展、、而形成金屬微針頭 狀的起始金屬;ΓΠ屬列特性會對應到呈斜面 是呈斜面狀的,如金屬微針頭14〇的末端也 所示進行脫模程序,移㈣^社再者’⑯「第1 G圖」 矜針頭1 4 Ω ·印β 材料1 3 〇露出中空的金屬 U針頭1 4 0 ,取後,對矽晶圓 蜀 貫通金屬微針頭1 4 〇的穿孔丄〇 2 ◦ ^ 刻,形成 、在上述的製5中,待乾蝕刻區1 1 2的定義並不限定 在進仃濕蝕刻:珂,基本上只要在進行乾蝕刻之前進行即 可’而且’鍍著金屬的技術可以選擇性的以電鍍、I電铲 (electroless platlng)、蒸鍍(dep〇siti〇n)或濺鍍 又Page 7 V. Description of the invention (3) The area to be wet-etched after 1 1 0 is obtained, and the partial silicon wafer exposed in s 1 1 1 is further treated as a circle for wet-etched area 1 0 0 during wet etching. Wet etching, because the silicon crystal has the characteristics of a chamfered concave area x 0 in etching, and the protective layer 110 that can be formed on the bottom side is also a micro-view / second king c picture, and then the area 1 1 2; Then, for example, "the first D type" means that the initial metal layer 1 2 0 (such as chromium, nickel θ, etc.) is to be dry-etched, and a shadowing technology is applied on the top surface of the broken wafer 100, such as "1 E m ^, Called, etc.) 'Then use the micro material 1 3 0 again, and form a number of plating ^ 丄 2 0 lay a photosensitive metal layer 1 2 0, this plating area 丄 3 d 1 way out of the local starting gold and then, On the plating area 13 is a tubular hollow area; the plating metal (such as copper, " nickel 箄, etc.) is the starting metal layer 1 2 0 on 1 4 0. And forming a metal microneedle-like starting metal; the characteristics of the ΓΠ column will correspond to the bevel-like surface, as shown in the end of the metal microneedle 14o. Figure 1 G: 」Needle 1 4 Ω · Printed β material 1 3 〇 Expose a hollow metal U needle 1 4 0, and then take out a silicon wafer through a metal microneedle 1 4 〇 perforation 丄 〇 2 ◦ Carved, formed, in the above system 5, the definition of the area to be dry etched 1 1 2 is not limited to wet etching: Ke, basically as long as it is performed before dry etching 'and' plating Metal technology can optionally be electroplated, electroless platlng, vapor deposition or sputtering
S 對 putter mg)等方式達成,所以起始金屬層丄2〇並非絕 必要,同時金屬材料也可選自鎳、鐵、金、鉑、鈀、各S to putter mg), etc., so the starting metal layer 丄 20 is not absolutely necessary, and the metal material can also be selected from nickel, iron, gold, platinum, palladium, each
第8頁 200416867 五、發明說明(4) 式合金或不錄鋼。$外,以石夕晶 面狀缺凹區並不 、1〇〇上為底材形成斜 用盆他底材士 $ 特疋,亦可採用乾蝕刻方式,或是f ”射力:i 光阻等聚合物材料等= 限於上述的id具:面狀缺凹區之底材“,而且不 、/卞―體製程步驟排序。 且个 AL至於形成微針頭陣列的密度柝告丨太々曰, ,時,藉由控制待濕 ::二則在定義待濕 2區彼此間的距離來達成…見,以及待濕钱 圖」所示本創作之第二二2 A 0」至「第2 F 出待濕蝕刻區2工 “ ::’ I「第2 B圖」定義 A2 ’或控制待濕餘丄ϊ^:内經長度… 不同的距離B 2、β 2 ! 〇、2 3 〇彼此間 如「第2 F圖」所示。 P此&致不同密度的陣列, 造出出:屬微針頭之外,亦可將制 造。請參閱「第Μ母;,「: =他材質微針頭的^ =實施例是先在具有金屬微針頭7 = ^,本創作第三較 :沉積脫模層3 2 0(如鐵氟龍;,以的:晶圓3 〇 〇表 1〇及石夕晶圓300,將高^;:f金屬微針頭 :…沿金屬微丄。壓製,待熱=薄 ;微針頭3 40。因此,金二貝附’冷卻後脫模即开 一模量產製造其他材料的::;以:微 200416867 五、發明說明(5) 者,依照材料的不同,脫模方式可以利用加熱、冷卻、界 面塗層、溶劑與直接脫模等方式為之。 貳、曝光顯影製造微針頭陣列 除了上述以鍍著技術製造金屬微針頭、高分子微針頭 之外,同樣利用具有斜面狀缺凹區的矽晶圓,亦可透過曝 光模造的方式製作微針頭本體。 請參閱第4 A圖至第4 Η圖,本發明第四較佳實施例 之施行步驟為:4 Α.在矽晶圓4 0 1表面沉積蝕刻保護層 4 0 2 ; 4 Β.舖設光阻曝光顯影定義欲蝕刻區域,並蝕刻 保護層4 0 2後得到待濕蝕刻區4 0 3 ; 4 C.非等向蝕刻 (濕蝕刻)矽晶圓4 0 1得到具有斜面幾何之缺凹區 4〇4 ; 4 D.舖設非反射層(如黑色光阻)4 0 5後,舖設 犧牲層如金(或脫膜層如鐵氟龍)4 0 6 ; 4 Ε.再舖設感光 材料4 0 7 ,進行第一次曝光得到第一曝光區4 0 8 ; 4 F.進行第二次曝光得到微針頭形狀之第二曝光區 4 0 9 ; 4 G.去除犧牲層4 0 6 (或直接脫膜),得到具有 斜面幾何的底材4 1 0 ; 4 II.底材4 1 0顯影後獲得微針 頭陣列4 2 0 。 上述步驟中,非反射層4 0 5主要目的是避免感光材 料曝光時由於曝光深度不同造成過度曝光,並且非反射層 4 0 5犧牲層4 0 6 (或脫膜層)舖設先後次序可調換;而 且,也可以先進行脫模,再進行曝光顯影的步驟。 另外,舖設一層以上的感光材料,可用來改變針頭通Page 8 200416867 V. Description of the invention (4) Type alloy or non-recorded steel. In addition, it is not necessary to use Shi Xijing's surface-shaped recessed area, and to form an inclined basin on the substrate as a substrate. Special features can also be dry etching, or f "radiation: i light Polymer materials, such as resistance, etc. = limited to the above-mentioned id: the substrate of the planar recessed area ", and not, / 卞-system step ordering. And the density of the AL array forming a micro-needle array is too small, and it is said that,,, by controlling the distance to be wet: 2: the second is to define the distance between the two areas to be wet ... See, and the money to be wet chart " The second 22 A 0 of this creation is shown in the second to the second F. 2nd process of the wet etching area ":" I "Figure 2B" defines A2 "or the length of the remaining wet ^: the length of the inner warp … Different distances B 2, β 2! 〇, 2 3 〇 are shown as "2F graph". P & Arrays of different densities can be created: Beyond microneedles, they can also be manufactured. Please refer to "Mother"; "= ^ = Example of micro-needle made of other materials is to first have metal micro-needle 7 = ^, the third comparison of this creation: depositing a release layer 3 2 0 (such as Teflon; To: Wafer 300 Table 10 and Shixi Wafer 300, will be high ^ :: f metal microneedle:… along the metal micro pin. Press, wait to heat = thin; microneedle 3 40. Therefore, gold Erbei's mold is released after cooling, and one mold is mass-produced for manufacturing other materials ::; micro: 200416867 V. Description of Invention (5) According to different materials, the demoulding method can use heating, cooling, and interface coating. This method uses layers, solvents, and direct demolding. 贰. Exposing and developing microneedle arrays in addition to the metal microneedle and polymer microneedle manufactured by the above-mentioned plating technology, it also uses silicon wafers with bevel-like recesses. The microneedle body can also be made by exposure molding. Please refer to Fig. 4A to Fig. 4 (b). The execution steps of the fourth preferred embodiment of the present invention are: 4 A. Deposit on the surface of silicon wafer 401 Etching protective layer 4 0 2; 4 Β. Laying photoresist exposure and development to define the area to be etched, and etching protection After the layer 402, the area to be wet etched is 403; 4 C. The non-isotropic etching (wet etch) silicon wafer 401 is obtained with the recessed area 404 with a bevel geometry; (Such as black photoresist) After 405, lay a sacrificial layer such as gold (or a release layer such as Teflon) 4 0 6; 4 Ε. Then lay a photosensitive material 4 7 and perform the first exposure to obtain the first exposure. Area 4 0 8; 4 F. Perform a second exposure to obtain a micro-needle-shaped second exposure area 4 0 9; 4 G. Remove the sacrificial layer 4 6 (or directly remove the film) to obtain a substrate 4 with a bevel geometry 1 0; 4 II. Substrate 4 1 0 Microneedle array 4 2 0 is obtained after development. In the above steps, the non-reflective layer 4 5 is mainly used to avoid overexposure due to different exposure depth when the photosensitive material is exposed. The layer 4 0 5 sacrificial layer 4 6 (or release layer) can be changed in order of laying; moreover, it can also be demolded and then exposed and developed. In addition, laying more than one layer of photosensitive material can be used to change the needle through
第1〇頁 200416867Page 10 200416867
並可整合微流道結合形 成取血及輸送系統 詳 道的管經 述如以下 請參閱第5A圖至第5G圖 施行步驟為:5 A·蝕刻沉積有 5 0 1得到具有斜面幾何之缺 層5 0 5、犧牲層(或脫膜層) 光材料5 0 7,進行第一次曝 5C.進行第二次曝光;5d·再 舖設第二層感光材料5 1 〇 , 設一層非反射層5 1 1、舖設 行第四次曝光;5F·去除犧^ 到具有斜面幾何之底材5 2 〇 得微針頭陣列5 3 〇。 其中非反射層與犧牲層或 換’或依不同結構需要及製程 亦可以做或不做,做的話底材 有正、負光阻可供選擇。 因此’利用相近的製程, 材料’形成不同大小的流道組 管徑的控制將使針頭的應用層 設計成流道連結網路(流道5 的距離及區域的大小,將可控 利用上述方式可形成微針 何,進而製作出各種斜面組合 ’本發明第五較佳實施例之 保護層5 0 2的矽晶圓 凹區5 0 4,並舖設非反射 5〇6 ,5B.舖設第一層感 光得到第一曝光區5 0 8 ; 舖設一層非反射層5 〇 9、 進行第三次曝光;5 E.再舖 第二層感光材料512,進 層506(或直接脫膜),得 ;5 G ·底材5 2 0顯影後獲 脫膜層舖設先後順序可調 需要而省略,而第二次曝光 較堅固;另外,感光材料也 可組合堆疊一層以上的光陴 合(流道5 a、5 b ),不同 面更廣;或是作為儲存區及 3 ) ’而定義蝕刻區域之間 制斜面針頭的的疏密。 頭斜面底材上的各種斜面幾 的被陣列針頭,如單斜面It can be integrated with a microfluidic channel to form a detailed blood collection and delivery system. The detailed description is as follows. Please refer to Figures 5A to 5G. The execution steps are: 5 A · Etching and depositing 5 0 1 to obtain a missing layer with a bevel geometry. 5 0 5, sacrificial layer (or release layer) light material 5 0 7 for the first exposure 5C. For the second exposure; 5d · lay a second layer of photosensitive material 5 1 0, a non-reflective layer 5 1 1. The fourth exposure of the laying line; 5F · Removal of the substrate to the substrate 5 2 with a bevel geometry yields a microneedle array 5 3 〇. Among them, the non-reflective layer and the sacrificial layer can be replaced or different according to different structural requirements and processes. The substrate can be made with positive or negative photoresistance. Therefore, 'using similar processes and materials' to form different sizes of flow channel groups. The control of the tube diameter will make the application layer of the needle be a flow channel connection network (the distance of flow channel 5 and the size of the area, which can be controlled using the above method) The microneedle can be formed, and then various bevel combinations can be produced. The silicon wafer recessed area 5 0 4 of the protective layer 5 2 of the fifth preferred embodiment of the present invention is laid with non-reflective 5 06 and 5B. Layer photosensitivity to obtain the first exposure area 508; laying a non-reflective layer 509, and performing a third exposure; 5 E. then lay a second layer of photosensitive material 512, enter the layer 506 (or directly remove the film), get; 5 G · Substrate 5 2 0 After development, the release layer can be adjusted in sequence and omitted, and the second exposure is more robust; In addition, the photosensitive material can also be stacked and stacked in more than one layer (flow channel 5 a , 5 b), different faces are wider; or as the storage area and 3) ', define the density of the beveled needles between the etched areas. Various beveled needles on the bevel substrate, such as single bevel
第11頁 200416867 五、發明說明(7) (如「第6圖」A) 式的斜面(如「第 雙斜面(如厂第7圖 圖」B、C等)。 A) 或是其他形 參、微加工 請參閱 六較佳實施 沉積保護層 蝕刻矽晶圓 8 D ·舖設犧 塑性材料6 6 0 7,而 理(定義流 中塑性材料 用雷射加工 射出成型。 以上所 以限定本發 本發明之精 於本發明之 技術製造微針頭陣列 「第8A圖」至「第8η圖 币 例,其施行步驟為·· 8 ^所揭露之本發明第 6〇2 ; 8B.定義出待=梦晶圓6〇1表面 …得到具有斜4=刻區603 ; 8C. 牲層605(或脫膜層^可^缺凹區604 ; 〇 6進行壓模,形成具有斜面幾8F·、8G.以 =除犧牲層6 0 5 (或 Ί才 =是熱=或^ 、崎;而得到底材 述者,僅為本發明較佳之實施例而已" 明貫施之範圍;任何熟習此技藝 亚非用 專利=所作之均等變化與修飾,皆應涵蓋Page 11 200416867 V. Explanation of the invention (7) (such as "Figure 6" A) The slope of the formula (such as "the second double slope (such as the factory Figure 7" B, C, etc.). A) or other formal parameters For micro-machining, please refer to Six Best Practices for Depositing a Protective Layer to Etch a Silicon Wafer 8 D · Laying a sacrificial plastic material 6 6 0 7 and arranging (defining a plastic material in the flow using laser processing for injection molding. The above limits the present invention Proven in manufacturing microneedle arrays "Figure 8A" to "Figure 8η" using the techniques of the present invention, the execution steps are as follows: 8 ^ The present invention disclosed in No. 602; 8B. Definition is waiting = Mengjing The surface of the circle 601 is obtained with a slope of 4 = the engraved area 603; 8C. The animal layer 605 (or the release layer ^ may ^ the recessed area 604; 〇6) is stamped to form a slope 8F ·, 8G. With = In addition to the sacrificial layer 6 0 5 (or Ί 才 = 是 热 = or ^, 崎, and obtained the substrate description, it is only the preferred embodiment of the present invention " the scope of Ming Guan Shi; anyone familiar with this technique Patents = equal changes and modifications made, all should be covered
第12頁 200416867 圖式簡單說明 第 1 A 圖 至 第 1 Η 圖 係 本 發 明 第 一 較 佳 實 施 例 之 製 造 流: 程 圖 第 2 A 圖 至 第 2 F 圖 係 本 發 明 第 --- 較 佳 實 施 例 之 製 造 流 程 圖 5 第 3 A 圖 至 第 3 C 圖 係 本 發 明 第 --- 較 佳 實 施 例 之 製 造 流 程 圖 第 4 A 圖 至 第 4 Η 圖 係 本 發 明 第 四 較 佳 實 施 例 之 製 造 流 程 圖 1 第 5 A 圖 至 第 5 G 圖 係 本 發 明 第 五 較 佳 實 施 例 之 製 造 流 程 圖 , 第 6 圖 第 7 圖 係 本 發 明 之 斜 面 狀 缺 凹 區 形 狀 與 可 獲 得 各 種 微 針 頭 形 狀 對 昭 圖 及 第 8 A 圖 至 第 8 Η 圖 係 本發 明 第 六 較 佳 實 施 例 之 製 造 流 程 圖 〇 [ 圖 式 符 號 說 明 ] 1 0 0 矽 晶 圓 1 0 1 缺 凹 區 1 0 2 穿 孔 1 1 〇 保 護 層 1 1 1 待 濕 刻 1 1 2 待 乾 4k 刻 區 1 2 0 起 始 金 屬 層 1 3 〇 感 光 材 料 1 3 1 鐘 著 區 1 4 〇 金 屬 微 針 頭 2 1 0 ik 刻 區 2 2 0 %k 刻 區 2 3 〇 刻 區 3 0 0 矽 晶 圓 3 1 〇 金 .屬 微 針 頭 3 2 0 脫 模 層 3 3 0 埶 y、'、 ‘塑 性 薄 膜 3 4 0 微 針 頭Page 12 200416867 The diagram is a brief description of diagrams 1 A to 1 Η The diagram is the manufacturing flow of the first preferred embodiment of the present invention: Process diagrams 2 A to 2 F diagrams are the first of the present invention. The manufacturing flowchart of the embodiment 5 Figures 3A to 3C are the manufacturing flowchart of the preferred embodiment of the present invention. Figures 4A to 4C are the fourth preferred embodiment of the present invention. Manufacturing flow chart 1 Figures 5A to 5G are manufacturing flowcharts of the fifth preferred embodiment of the present invention. Figures 6 and 7 are the shapes of the bevel-shaped recessed areas of the present invention and various microneedle shapes can be obtained. Figures from Zhao and Figure 8A to Figure 8 are the manufacturing flowchart of the sixth preferred embodiment of the present invention. [Illustration of Symbols] 1 0 0 Silicon wafer 1 0 1 Notched area 1 0 2 Perforation 1 1 〇 Protective layer 1 1 1 To be wet etched 1 1 2 To be dried 4k engraved area 1 2 0 Starting metal layer 1 3 〇 Photosensitive material 1 3 1 Bell area 1 4 〇 Metal microneedle 2 1 0 ik engraved area 2 2 0% k engraved area 2 3 〇 engraved area 3 0 0 silicon wafer 3 1 〇 gold. Belongs to microneedle 3 2 0 release layer 3 3 0 埶 y, ',' Plastic film 3 4 0 microneedle
第13頁Page 13
200416867200416867
圖式簡單說明 4 0 1 矽 晶 圓 4 0 2 保 護 層 4 0 3 待 ik 刻 區 4 0 4 缺 凹 區 4 0 5 非 反 射 層 4 0 6 犧 牲 層 4 0 7 感 光 材 料 4 〇 8 第 — 曝 光 區 4 0 9 第 二 曝 光 區 4 1 0 底 材 4 2 0 微 針 頭 陣 列 5 0 1 矽 晶 圓 5 0 2 保 護 層 5 0 4 缺 凹 區 5 0 5 非 反 射 層 5 0 6 犧 牲 層 5 0 7 感 光 材 料 5 0 8 第 - 曝 光 區 5 0 9 非 反 射 層 5 1 0 感 光 材 料 5 1 1 非 反 射 層 5 1 2 感 光 材 料 5 2 〇 底 材 5 3 〇 微 針 頭 陣 列 5 a 、 ^ 5 b、 5 C 流 道 6 〇 1 矽 晶 圓 6 0 2 保 護 層 6 0 3 待 濕 刻 區 6 〇 4 缺 凹 區 6 〇 5 犧 牲 層 6 〇 6 塑 性 材 料 6 〇 7 底 材 6 1 〇 微 針 頭 陣 列 6 a 、 6b 流道Brief description of the figure 4 0 1 Silicon wafer 4 0 2 Protective layer 4 0 3 Ik etched area 4 0 4 Notch area 4 0 5 Non-reflective layer 4 0 6 Sacrificial layer 4 0 7 Photosensitive material 4 〇8 — Exposure Area 4 0 9 Second exposure area 4 1 0 Substrate 4 2 0 Microneedle array 5 0 1 Silicon wafer 5 0 2 Protective layer 5 0 4 Notch area 5 0 5 Non-reflective layer 5 0 6 Sacrificial layer 5 0 7 Photosensitive material 5 0 8th-exposure area 5 0 9 Non-reflective layer 5 1 0 Photosensitive material 5 1 1 Non-reflective layer 5 1 2 Photosensitive material 5 2 〇Substrate 5 3 〇Microneedle array 5 a ^ 5 b, 5 C Channel 6 〇1 Silicon wafer 6 0 2 Protective layer 6 0 3 Area to be wet-etched 6 〇4 Notched area 6 〇5 Sacrificial layer 6 〇6 Plastic material 6 〇7 Substrate 6 1 〇Microneedle array 6 a , 6b runner
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