TW200407049A - Organic light-emitting device and fabrication method thereof - Google Patents
Organic light-emitting device and fabrication method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
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Abstract
Description
200407049200407049
【發明所屬之技術領域】 ^ 本發明係有關於一種發光裝置,尤指一種具有三波長 發白光特性之有機電激發光裝置及其製作方法。 【先前技術】 •有機電激發光裝置(Organic Light Emitting Device ,OLED)自從1 987年由柯達公司的c· w. Tang及§· Α· 纱[Technical field to which the invention belongs] ^ The present invention relates to a light-emitting device, and more particularly to an organic electro-optical light-emitting device having three-wavelength white light emission characteristics and a manufacturing method thereof. [Previous Technology] • Organic Light Emitting Device (OLED) has been developed by Kodak's c · w. Tang and § · Α · yarn since 1987.
e利用真空蒸鍍方式,將電洞傳輸材料及電子傳輸材料, 如Alq3 ’分別鍍覆於透明之IT〇玻璃上,其後再蒸鐘一金 屬電極形成具有自發光性、高應答速度、重量輕=厚度薄 、低耗電、廣視角、高亮度及可全彩化的有機電激發光元 件元件(0LED)。此後,有機電激發光元件被視為是顯示器 產ί之明星產品,大家莫不希望其可早日運用於全彩化顯 不器或投射出白色光源,以達到真正可兼具綠色環保及省 電功效之照明理想境界。 请參閱第1圖’係為習用0LED之構造剖視圖,此構造 係揭露於1 988年美國專利第4,‘76 9, 2 9 2號,由美國柯達公eVacuum evaporation method is used to deposit hole-transporting materials and electron-transporting materials such as Alq3 'on transparent IT0 glass, and then vaporize a metal electrode to form a self-luminous, high response speed, weight Light = thin organic light emitting element (0LED) with thin thickness, low power consumption, wide viewing angle, high brightness and full color. Since then, organic electro-optical light-emitting elements have been regarded as the star products of displays. Everyone hopes that they can be used in full-color displays or project white light sources as soon as possible to achieve true environmental protection and power saving effects. The ideal state of lighting. Please refer to FIG. 1 ', which is a cross-sectional view of a conventional 0LED structure. This structure is disclosed in US Patent No. 4, '76 9, 2 92, 1988, issued by Kodak Company in the United States.
司所揭露之「ELECTROLUMINESCENT DEVICE WITH M0DIFIE"ELECTROLUMINESCENT DEVICE WITH M0DIFIE"
D THIN FILM LUMINESCENT ZONE」專利中;該有機電激發 光裝置(OLED)IO主要係在一透光基板η上蒸鍍形成一透^ 可導電性之陽極(IT0)13,並於該ΙΤ0陽極13上再依序形成 一電洞傳輸層(HTL)15、發光層(EML)17及一金屬陰極^, 另外於發光層17内摻雜(Doping) —螢光物質(未顯示),當 陽極1 3及陰極1 9受到外加偏壓作用時,電洞將可自丨τ〇 ^"D THIN FILM LUMINESCENT ZONE" patent; the organic electroluminescence device (OLED) IO is mainly deposited on a transparent substrate η to form a transparent conductive anode (IT0) 13, and the ITO anode 13 A hole-transport layer (HTL) 15, a light-emitting layer (EML) 17 and a metal cathode ^ are sequentially formed on the top, and a doping-fluorescent substance (not shown) is doped in the light-emitting layer 17. When the anode 1 When the 3 and cathode 19 are subjected to an external bias, the hole will be able to be switched from ττ ^
200407049 五、發明說明(2) 極13經由電洞傳輸層15傳輸至發光層15,而電子也相對 從陰極1 9傳輸至發光層1 7,發光層1 7内的電子及電洞將可 因為再,合作用(Rec〇mbinati〇n)而產生激態分子 n、>),激悲分子在釋放出能量而再回至基態時即可自行在發 光層1 7内發光,或再激發摻雜之螢光物質成激發狀態並投 射出所設定之特定範圍波長光源。 一雖然上述第一種習用之〇LED構造及技術雖然可達到投 射光源之效果,惟其僅可投射單色光源而無法達到投射白 色光源或全彩化之終極目標。200407049 V. Description of the invention (2) The electrode 13 is transmitted to the light-emitting layer 15 through the hole-transporting layer 15, and the electrons are also relatively transferred from the cathode 19 to the light-emitting layer 17. The electrons and holes in the light-emitting layer 17 will be caused by Furthermore, the cooperative action (RecOmbination) produces excimer molecules n, >). When the excitatory molecules release energy and return to the ground state, they can emit light in the light emitting layer 17 by themselves, or re-excitation doping. Miscellaneous fluorescent substances are excited and project a set range of wavelength light sources. First, although the above-mentioned first conventional LED structure and technology can achieve the effect of projecting a light source, it can only project a monochromatic light source and cannot reach the ultimate goal of projecting a white light source or full color.
立睛參閱第2圖,係為另一種習用0LED之各元件能階示 ,圖,此構造係揭露於1 9 96年美國專利申請第 唬’由美國摩托羅拉公司所揭露之「〇RGANIC electroluminescent device with emission from hole TRANSPORTING LAYER」專利中;該項技術主要是除了 !丁〇 陽,22、電子傳輸層(ETL)24及陰極25外,還包括有一介 1陽極22及電子傳輸層24間之電洞傳輸層(HTL ) 23,由於 搭配電子傳輸層24及電洞傳輸層23材質之選用,致使電子 傳輸層24及電洞傳輸層23價帶間之能階差(EC1—EC2 )將小 於兩者間之傳導帶間之能階差(EV1 _EV2 ),如此一來,電-子傳輸層24内傳輸至電洞傳輸層23之電子數量將遠超過反 方向傳輸至電子傳輸層24之電洞數量,因此電子與電洞之 再結合及投射光源之位置將發生於電洞傳輸層23。另外, 為了方便電洞之自陽極2 2傳輸並注入電洞傳輸層2 3中,於 此專利中還揭路有一設於陽極2 2與電洞傳輸層2 3間之電洞 第6頁 200407049 五、發明說明(3) 注入層。 雖然上述之摩托羅拉專利技術令,可將戶 ?電洞留置於電洞傳輸層23中與電子進行再結:::較快 咼發光效率’ t隹其亦僅可投射出單色光源,且同‘盔:J 到投射白色光源或全彩化之終極目標。 ,,、、、法達 ,了達到0LED可用於白色光源及全彩化之終極目伊, =莫:哥求各種解決之技術方案,目前主要可達到: 政果之解決方案計有下列三種: 少 1.光色轉換法(Color ConVe;rSi〇n): 其主要是利用藍光為發射源,再將此藍光激發一 轉換薄膜以取得紅綠藍(RGB)三原色可見光,並= 藉此以達到全彩化或投射白色光源之目的; 布主 Ϊ光= = 不僅光色轉換薄膜之光色純度及 ^先效率不甚滿思,且因為色轉換材料會吸收環 ^光(或紫外光^將造成潛在之對比及畫素問題。 2·彩色濾光膜法(c〇l〇rFilter): 、 利用白色有機電激材料為背光源,搭配使用已用於Μ D之彩色濾光片,以期望達到全彩的效果; 、 然,此種技術之關鍵點在於白色光源如何取得,且白-色光源是否為全波段連續光源及如何提升發光效 皆是產品欲量產化之前必須突破之技術重點。 3 ·紅藍綠三色獨立發光法: 主要是將RGB三原色獨自發光,期望以最直接以 取得全彩效果,或再搭配以成為白色光源。 第7頁 200407049See Figure 2 for an example of the energy performance of another conventional 0LED. This structure is disclosed in the US Patent Application No. 196 in 1996. "RGANIC electroluminescent device with emission from hole TRANSPORTING LAYER "patent; this technology is mainly in addition to! Ding Yang, 22, in addition to the electron transport layer (ETL) 24 and the cathode 25, a hole transport layer (HTL) 23 between the anode 22 and the electron transport layer 24 is included. The choice of the material of the transmission layer 23 causes the energy step difference (EC1—EC2) between the valence band of the electron transmission layer 24 and the hole transport layer 23 to be smaller than the energy step difference (EV1_EV2) between the conduction bands between the two. In the future, the number of electrons transmitted to the hole transmission layer 23 in the electric-sub-transmission layer 24 will far exceed the number of holes transmitted to the electron transmission layer 24 in the opposite direction, so the recombination of electrons and holes and the location of the projection light source will occur.于 电 孔 输 层 23。 In the hole transmission layer 23. In addition, in order to facilitate the transmission of the hole from the anode 22 and inject it into the hole transmission layer 23, this patent also discloses a hole provided between the anode 22 and the hole transmission layer 23. Page 6 200407049 V. Description of the invention (3) Injection layer. Although the above-mentioned Motorola patent technology order, it is possible to leave the residential hole in the hole transmission layer 23 and re-junction with the electron ::: Faster 咼 Luminous efficiency 't 隹 It can also only project a monochromatic light source, and the same 'Helmet: J to the ultimate goal of projecting a white light source or full color. ,,,, Fada, reached 0LED can be used as the ultimate source of white light source and full-color, = Mo: Ge seeking various technical solutions, the main can currently be reached: Zhengguo's solutions include the following three: Less 1. Color ConVe (rSi〇n): It mainly uses blue light as the emission source, and then excites this blue light into a conversion film to obtain three primary colors of red, green and blue (RGB) visible light, and = to achieve this The purpose of full color or projection of a white light source; cloth light = = Not only the light color purity and efficiency of the light color conversion film is not very satisfactory, but because the color conversion material will absorb ambient light (or ultraviolet light ^ will Potential contrast and pixel problems. 2. Color filter method (c0l0rFilter): Use a white organic electro-active material as a backlight source, and use a color filter that has been used in MD to meet expectations. To achieve the effect of full color ;, of course, the key point of this technology is how to obtain a white light source, and whether the white-color light source is a full-band continuous light source and how to improve the luminous effect are the technical priorities that must be broken before the product is mass-produced . 3 · Red and Blue Independent three-color light emitting method: RGB primary colors emission is mainly alone, it is desirable to achieve the most direct effect full color, or a white light source so as to be then with 7200407049 page.
但 一,一 口曰赏无,其色彩平衡性較羔 ,晝素精細度之要求亦增加製程之困難择 雞度,而且三個不因 色彩之有機物質獨立發光,其發弁对查 ,.~ „ ^ 乂尤效率、使用壽命及控制 難易度亦各有不同,例如紅色光湄雜、去 ^ ^ 匕710,原就難以達到純紅的境界 而偏向橘紅色’其使用壽命相對亦短。 【發明内容】 因此,如何針對上述 問題及缺憾提出一種解決 式以達到最佳之全彩光源 終極目標。爰是 本發明之主要目的, ,可藉由三波長之光源投 佈’以輕易達到白光或全 本發明之次要目的, ’可有效解決長久以來製 4用有機電激發光裝置所發生之 方法’可藉由三波長投射光源方 刀佈’且輕易完成白光或全彩之 在於提供一種有機電激發光裝置 射方式以取得最佳之光色均勻分 彩之終極產品要求。 在於提供一種有機電激發光裝置 作白色光源或全彩產品之弊端者 士 ^明之又一目的,在於提供一種有機電激發光裝置 ;θ:Γ:ί主體材料層與客發光體物質之搭配使用,以有效 才疋兩愈光效率及使用壽命者。 2上述目的,因此在本發明一較佳實施例中,其主 要構=少係包括有:―具有第一型導電性之第一導電層 二:2弟一導電層上侧之第一主體材料層,内混雜設有 弟各發光體物質,可於一外加偏壓作用下投射出一第 200407049But one, one sip, said no reward, its color balance is better than lamb, the requirement of day fineness also increases the difficulty of the process, and the three organic materials that do not emit light independently emit light. „^ Chiyou ’s efficiency, service life, and ease of control are also different, such as red light Mae Za, ^ ^ dagger 710, it is difficult to reach the realm of pure red, and it is biased to orange-red 'its life is relatively short. Summary of the Invention] Therefore, how to propose a solution to the ultimate goal of the best full-color light source in light of the above problems and shortcomings is the main purpose of the present invention, and it can be easily achieved by white light or three-wavelength light sources. For the secondary purpose of the present invention, 'the method that can effectively solve the problems that have occurred for a long time in the production of organic electro-excitation light devices' can be achieved with a three-wavelength projection light source square knife cloth' and easily complete white light or full color. The electromechanical excitation light device emits light in order to obtain the ultimate light and color separation. The ultimate product requirement is to provide an organic electrical excitation light device as a white light source or a full-color product. Another object of the disadvantager is to provide an organic electroluminescent device; θ: Γ: ί the combination of the host material layer and the guest luminous substance in order to effectively reduce the light efficiency and service life. 2 Purpose, therefore, in a preferred embodiment of the present invention, its main structure includes:-a first conductive layer having a first conductivity type 2: a first host material layer on the upper side of the conductive layer, Internally mixed with each luminous substance, it can project a 200407049 under an external bias.
五、發明說明(5) 一色光源;一設於第一主體材料層上侧之第二主體材 ,内混雜設有一第二客發光體物質,可於外加偏壓作用; 投射出一第二色光源;一設於第二主體材料層上侧之 主體材料層,内混雜設有一第三客發光體物質,可於 ^ 偏壓作用不投射出一第三色光源;及一具有第二型導電^ 之第二導電層,設於第三主體材料層之上側。 【實施方式】 茲為使貴審查委員對本 功效有更進一步之瞭解與認識 配合詳細之說明,說明如后: 發明之結構特徵及所達成之 ,謹佐以較佳之實施例圖及 _ 、首先’請麥閱第3圖’係為本發明一較佳實施例之構 造截面圖;如圖所示,本發明有機電激發光裝置3〇主要係 在一透光基板3 1之上側以蒸鍍或濺鍍等方式以形成一第二 導電層33 (如陽極),而在陽極33之上侧再依序形成一電 洞傳輸層35 (HTL ·,第一載子傳輸層)及一具有阻隔第二載 子(電子)前進之電子阻隔層47«(electron Mc)cking layeV. Description of the invention (5) One-color light source; a second host material provided on the upper side of the first host material layer, and a second guest luminous substance mixed therein, which can be biased; a second color is projected A light source; a host material layer provided on the upper side of the second host material layer, and a third guest luminous substance mixed therein, which can not project a light source of a third color under a bias effect; and a second-type conductive material The second conductive layer is disposed on the upper side of the third host material layer. [Implementation] In order to make your reviewers have a better understanding of this effect and cooperate with a detailed description, the explanation is as follows: The structural features of the invention and the achievement, please refer to the preferred embodiment diagram and _, first ' Please refer to FIG. 3 for a structural cross-sectional view of a preferred embodiment of the present invention; as shown in the figure, the organic electro-optical light emitting device 30 of the present invention is mainly formed on the upper side of a transparent substrate 31 by evaporation or Sputtering or the like to form a second conductive layer 33 (such as an anode), and a hole transport layer 35 (HTL ·, first carrier transport layer) and a barrier Electron Barrier Layer 47 «(electron Mc) cking laye
ιΟ ’電子阻隔層47之上側再依序形成有一第一主體材料層 41 (Host 1)、第二主體材料層42 (H〇st 2)及第三主體 料層43 (Host 3),且於第三主體材料層43之上側依序形 成有一可阻隔電洞前進之電洞阻隔層45 (hole blocking laYer)、電子傳輸層37 (ETL ;第二載子傳輸層)及陰極39 藉由電子阻隔層47,可將來自於陰極39之電子阻隔於A first host material layer 41 (Host 1), a second host material layer 42 (Hos 2), and a third host material layer 43 (Host 3) are sequentially formed on the upper side of the electron blocking layer 47. A hole blocking layer 45 (hole blocking laYer), an electron transporting layer 37 (ETL; second carrier transporting layer), and a cathode 39 are sequentially formed on the upper side of the third main material layer 43 to block the advance of the holes. Layer 47 can block electrons from cathode 39 on
200407049200407049
電洞傳輸層3 5之上側,換言之,即 3 (43)、Host 2 (42)及 H〇st 1 (二:電子限制於第 Host 阻隔層45,可將來自於陽極33 二=二卜,藉由電洞 之底側,換言…是將電洞同=On the upper side of the hole transport layer 3 5, in other words, 3 (43), Host 2 (42), and H0st 1 (two: the electrons are limited to the host barrier layer 45, and the anode 33 can be obtained from two anodes = two, By the bottom side of the hole, in other words ... is the same as the hole =
Host 2 (42)及 Host 3 (43)内。由於大部八 j (41 )、 Γ皮”ΐ被限制在Host 1、Host 2"範::電Ξ =;結合動作’藉…有效提高各主體材料層”; 在第一主體材料層41 ),第二 •發光體物 體物質(Guest 1 相對應之第二客 層4 3内一樣混雜 3)’這些客發光 物質、磷光物質 合時,受到激態 光源,例如在此 七2投射藍光(β) 產出RGB三波段 設有一相 體物質係 或兩者之 分子之能 實施例中 5 而 Gues 三原色, 内混雜(m i X i ng)有一第一客發光 主體材料層4 2内同樣混雜設有一 i (Guest 2 ),而第三主 對應之第三客發光體物質 可選擇為一可相對應搭配 混合物,其可在電子電洞 量釋放而投射出相對應之 ,Guest 1可投射紅光(R) t 3投射綠光(G) ’如此即 而組合出一全波段連續光Host 2 (42) and Host 3 (43). Since most of the j (41) and Γ skin "ΐ are restricted to Host 1, Host 2 " Fan :: Electricity =; combined action 'borrow ... effectively improve each host material layer'; in the first host material layer 41) Second, the luminous object matter (the second guest layer corresponding to Guest 1 is also mixed in 3 3) 3) When these guest light emitting materials and phosphorescent materials are combined, they receive an excited light source, such as blue light (β) projected here The RGB three-wavelength band is provided with a phase substance substance or a molecule of the two. In the embodiment 5 and the Gues three primary colors, the inner hybrid (mi X i ng) has a first guest light emitting host material layer 4 and the i is also mixed with an i. (Guest 2), and the third guest luminous substance corresponding to the third host can be selected as a corresponding matching mixture, which can be released in the amount of electron holes to project the corresponding, and Guest 1 can project red light (R ) t 3 projects green light (G) 'so that a full-band continuous light is combined
體材料 (Guest 之螢光 對再結 不同色 5 Gues 可因此 譜之白 色光源或全彩化產品,不僅製程相對簡單,且可有效增加 發光效率。Body materials (Guest's fluorescent pairing and re-knotting 5 Gues can be white light source or full-color products, which not only has a relatively simple manufacturing process, but also can effectively increase luminous efficiency.
當然,對白光或全彩之理想C I E 色度圖體系規格而言 ’綠光之濃度相對於紅光及藍光要稍微增加,因此,在此 實施例中,可投射出綠光之Guest 3濃度相對於Guest 1及Of course, for the ideal CIE chromaticity chart system specifications of white light or full color, the concentration of green light is slightly increased relative to red and blue light. Therefore, in this embodiment, the concentration of Guest 3 that can project green light is relatively At Guest 1 and
第10頁 200407049 五、發明說明(7) 一Page 10 200407049 V. Description of Invention (7)
Guest 2的濃度也要相對為高,且,在|}ost 3之電子電洞 對數量也可設計為相對於Host 1及11〇討2為大,而H〇st 1、Host 2及Host 3之位置安排全有賴於其能階之相對搭 配0The concentration of Guest 2 must also be relatively high, and the number of electron hole pairs in |} ost 3 can also be designed to be larger than Host 1 and 110, and Host 1 and Host 2 and Host 3 The arrangement of positions depends on the relative matching of their energy levels.
再者,請參閱第4圖,係為本發明又一實施例之構造 截面圖;如圖所示,在此實施例中,其主要係在一可由玻 璃、石英或塑膠製成之透光基板3丨上以蒸鍍或濺鍍等方式 形成一可由銦錫氧化物(IT0 )、聚笨胺(PANI)、氧化鋅( ZnOx)、氧化鉬(Mo0x)、氧化釩(ν〇χ)、氧化釕(Ru〇x)、Au 、Cul、Sn0 2或ZnO等具透光導電性功效之金屬、合金、化 合物或混合物所構成之陽極33。接續,IT〇 33之上表面再 依績形成——可由M-MTD ΑΤΑ所構成之電洞注入層(hi L) 53、 由NPB所構成之電洞傳輸層(htl)35、由LiF所構成之電子 阻隔層47、由NPB所構成之第一主體材料層41、由 構成之第二主體材料層42、由Alq3所構成之第三主體材料 層43、由BCP所構成之電洞阻隔層45、由A1(1所構成之電子 傳輸層(ETL)37、由LiF所構成之電子注入層(eil) 57、及Furthermore, please refer to FIG. 4, which is a structural cross-sectional view of another embodiment of the present invention. As shown in the figure, in this embodiment, it is mainly a light-transmitting substrate made of glass, quartz, or plastic. 3 丨 A vapor-deposition or sputtering method is used to form an indium-tin oxide (IT0), polybenzylamine (PANI), zinc oxide (ZnOx), molybdenum oxide (Mo0x), vanadium oxide (ν〇χ), and oxidation. An anode 33 composed of a metal, alloy, compound, or mixture having a light-transmitting conductive effect such as ruthenium (Ru0x), Au, Cul, Sn02, or ZnO. Successively, the top surface of IT033 was formed according to performance-a hole injection layer (hi L) 53 composed of M-MTD ΑΤΑ, a hole transmission layer (htl) 35 composed of NPB, and a LiF composed Electron blocking layer 47, first host material layer 41 made of NPB, second host material layer 42 made of third base material, third host material layer 43 made of Alq3, hole barrier layer 45 made of BCP , An electron transport layer (ETL) 37 composed of A1 (1), an electron injection layer (eil) 57 composed of LiF, and
一可由Au、A1、Mg、Pt、Ag、MgAg、AlLi、AlLiO、AlLiF 或Ca等具導電性材質所構成之陰極39。 〜A cathode 39 made of a conductive material such as Au, Al, Mg, Pt, Ag, MgAg, AlLi, AlLiO, AlLiF, or Ca. ~
其中,第一主體材料層41之NPB中混雜設有至少一可 投射出紅光之DCM2物質,第二主體材料層42之DPVBi中混 雜设有至少一可投射出藍光之DSA物質,而第三主體材料 層43之Alq3中混雜設有至少一可投射出綠光之⑼物質,藉 由上述各主體材料層(H〇sts )之能階位置安排,致使因為Among them, the NPB of the first host material layer 41 is mixed with at least one DCM2 substance capable of projecting red light, the DPVBi of the second host material layer 42 is mixed with at least one DSA substance capable of projecting blue light, and the third The Alq3 of the host material layer 43 is mixed with at least one thorium substance capable of projecting green light. By the arrangement of the energy level positions of the host material layers (Hosts) described above,
第11頁 200407049 五、發明說明(8) 電洞阻隔層45及電子阻隔層47之阻隔作用而被受限於Νρβ 41、DPVBi 42、Alq3 43範圍内之電子電洞對將可普遍分 佈於各個主體材料層4 1〜4 3中。當一外加偏壓作用下,可 藉由各個客發光體物質(Guest ),而可投射出紅、藍、綠 二原色光源,形成一個完整之三波長投射光源體系,而可 輕易達成全波段之白色光源或全彩化產品。 為了整合後之光源,如白光,具有更符合理想之c工E 色度圖體系規格,C6之濃度可比DSA、DCM2之濃度為高, 或Alq3 43之厚度可比DPVBi 42、nPB 41之厚度=對$厚 當然,本發明上述實施例中,各層部分所選用之材料 可有多種變化,下列所述專利所揭露之材料物質亦可適用 參考:例如,ETL層或HTL層材料可參考美國專利案第5,29 4三870號,HTL層材料可參考美國專利案第5, 〇61,56g號、 第5, 256, 945號,ETL層材料可參考美國專利案第4, 539, 5〇 7號、第5, 886, 464號,HIL層材料可參考美國專利案第3,9 35, 03 1號、第4, 356, 429號,陽極可參考美國專利案第5,’7 73, 92^號,EIL層材料可參考美國專利案第4,㈣,5〇7號。· 綜上所述,本發明係有關於一種發光裝置,尤指一種一 具有三波長發白光特性之有機電激發光裝置及其製作方法 ’藉此可得以直接獲#-具有三波長特性之連續全波段全 彩光源者。故本發明實為一具有新穎性、進步性及可供產 業上利用者,應符合我國專利法專利申請要件盔疑,爰依 法提出發明專利申n㈣早日賜准㈣,至感為禱 第12頁 200407049Page 11 200407049 V. Description of the invention (8) Electron hole pairs in the range of Nρβ 41, DPVBi 42 and Alq3 43 will be generally distributed among the hole blocking layers 45 and 47. The host material layers 4 1 to 4 3. When an external bias is applied, red, blue, and green primary light sources can be projected through each guest luminous substance (Guest), forming a complete three-wavelength projection light source system, which can easily achieve full-wavelength White light source or full color product. In order to integrate the light source, such as white light, it has more in line with the specifications of the ideal C and E chromaticity diagram system. The concentration of C6 can be higher than that of DSA and DCM2, or the thickness of Alq3 43 can be greater than the thickness of DPVBi 42, nPB 41. Thickness Of course, in the above embodiments of the present invention, the materials selected for each layer can have a variety of changes. The material substances disclosed in the following patents can also be applied for reference: For example, the materials of the ETL layer or HTL layer can refer to the US patent case. No. 5,29, No. 870, refer to U.S. Patent Nos. 5, 〇61,56g and 5,256,945 for HTL layer materials, and refer to U.S. Patent No. 4,539,507 for ETL layer materials. No. 5, 886, 464. For the material of the HIL layer, please refer to US Patent Nos. 3,9 35, 03 1 and 4, 356, 429. For the anode, please refer to US Patent No. 5, '7 73, 92. No., EIL layer material can refer to U.S. Patent No. 4, 案, 507. · In summary, the present invention relates to a light-emitting device, and more particularly to an organic electro-luminescent device having three-wavelength white light emission characteristics and a method for manufacturing the same. Full-band full-color light source. Therefore, the present invention is truly novel, progressive, and available for industrial use. It should meet the patent application requirements of China's Patent Law, and file an application for an invention patent in accordance with the law. I would like to grant it soon. 200407049
惟以上所述者,僅為本發明之 非用來限定本發明實施之範圍,施例而已’並 圍所述之形狀、構造、特徵及精神所、2:凊專利範 ’均應包括於本發明之申請專利範園:。-、’交化與修飾 【圖號對照說明】: 10 0LED 13 陽極 17 發光層 22 陽極 24 電子傳輸層 30 0LED 33 第一導電層 37 弟一载子傳輸層 41 第一主體材料層 43 第三主體材料層 47 弟二載子阻隔層 57 弟一载子注入層 11 透光基板 15電洞傳輸層 陰極 23 電洞傳輸層 25 陰極 基板 35 第一載子阻隔層 39 第二導電層 4 2 第二主體材料層 45第一載子阻隔層 53第一載子注入層However, the above is only for the purpose of not limiting the scope of the present invention. The examples, and the shapes, structures, features, and spirits described in the examples, and 2: "patent patents" shall be included in this specification. Invention patent application park :. -、 'Crossing and modification [Comparison of drawing number]: 10 0LED 13 anode 17 light emitting layer 22 anode 24 electron transport layer 30 0LED 33 first conductive layer 37 carrier transport layer 41 first host material layer 43 third Host material layer 47 Diode carrier barrier layer 57 Diode carrier injection layer 11 Transparent substrate 15 Hole transport layer cathode 23 Hole transport layer 25 Cathode substrate 35 First carrier barrier layer 39 Second conductive layer 4 2 No. Two host material layers 45 first carrier blocking layer 53 first carrier injection layer
第13頁 200407049 圖式簡單說明 第1圖:係習用有機電激發光裝置之構造剖視圖; 第2圖:係另一種習用有機電激發光裝置之各元件能階示 意圖; 第3圖:係本發明有機電激發光裝置之一較佳實施例之構 造截面圖,及 第4圖:係本發明又一實施例之構造截面圖。Page 13 200407049 Brief description of the drawings. Figure 1: A sectional view of the structure of a conventional organic electroluminescent device; Figure 2: A schematic diagram of the energy levels of components of another conventional organic electroluminescent device; Figure 3: The present invention A structural cross-sectional view of a preferred embodiment of an organic electroluminescent device, and FIG. 4 is a structural cross-sectional view of another embodiment of the present invention.
第14頁Page 14
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US20080038586A1 (en) * | 2004-07-16 | 2008-02-14 | Masato Nishizeki | White Light Emitting Organic Electroluminescence Element, Display and Illuminator |
JP5076501B2 (en) * | 2004-07-16 | 2012-11-21 | コニカミノルタホールディングス株式会社 | White organic electroluminescence element, image display element, and illumination device |
US20090051273A1 (en) * | 2005-03-02 | 2009-02-26 | Konica Minolta Holdings, Inc. | Organic Electroluminescence Element, Image Display Device and Lighting Device |
EP1705727B1 (en) * | 2005-03-15 | 2007-12-26 | Novaled AG | Light emitting element |
JP2006269447A (en) * | 2005-03-22 | 2006-10-05 | Nippon Seiki Co Ltd | Organic el panel |
KR101403184B1 (en) * | 2006-07-24 | 2014-06-02 | 동우 화인켐 주식회사 | White Organic Light-Emitting Device |
US8143613B2 (en) * | 2007-11-27 | 2012-03-27 | The Regents Of The University Of Michigan | Organic light emitting device having multiple separate emissive layers |
JP5325707B2 (en) | 2008-09-01 | 2013-10-23 | 株式会社半導体エネルギー研究所 | Light emitting element |
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CN102969455B (en) * | 2012-12-18 | 2015-08-05 | 中国科学院长春应用化学研究所 | White color organic electroluminescence device and preparation method thereof |
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