CN102184938B - Organic electroluminescent device and manufacturing method thereof - Google Patents

Abstract

The present application relates to a color organic electroluminescence device, comprising: a substrate; a first electrode; a second electrode; and an organic functional layer arranged between the first and second electrodes, the organic functional layer at least includes red and green Three sub-pixel organic functional areas, blue and blue, wherein at least one sub-pixel organic functional area includes: a phosphorescent light emitting layer, the phosphorescent light emitting layer is a non-blue light emitting layer; and a blue light emitting layer, wherein the blue light emitting layer covers the phosphorescent light emitting layer layer. The present invention also relates to a method for preparing a color organic electroluminescent device, wherein a precision mask is used to prepare a phosphorescent light-emitting layer on the phosphorescent sub-pixel part, and a third open mask is used to prepare a blue light-emitting layer, the blue light-emitting Layers cover phosphorescent and blue subpixels.

Description

Organic electroluminescent device and its preparation method

technical field

The invention relates to an organic electroluminescent device, especially a color organic electroluminescent device, and a preparation method of the organic electroluminescent device.

Background technique

In recent years, organic light-emitting diode (OLED) display has received great attention in the field of flat panel display, showing a very broad application prospect, because it has many unique advantages compared with traditional liquid crystal displays, such as self-illumination, low Power consumption, wide viewing angle, fast response, wide color gamut, can be prepared into flexible displays, etc. There are many ways to achieve colorization of OLEDs, including RGB three-primary color method, color conversion method, color filter method, micro-resonant cavity adjustment method, etc. Among them, the RGB three-primary color method is currently the most mature method and is also used by domestic and foreign manufacturers. The preparation process requires an open mask (open mask) is required when evaporating shared layers, for example, evaporating shared hole injection layer (HIL), hole transport layer (HTL), electron transport layer (ETL) materials, and evaporated metal electrodes. In addition, when evaporating non-shared red, green and blue light-emitting layers, three accurate alignments are required, and three precise shadow masks are also required. With the higher and higher requirements for display pixel resolution, higher challenges have been put forward for the alignment system and precision mask of OLED evaporation equipment. The equipment of high-precision alignment system and high-precision mask are very Expensive, greatly increasing the production cost of OLED.

Contents of the invention

The object of the present invention is to propose an organic electroluminescent device, which has the advantages of low manufacturing cost and high luminous efficiency.

According to one aspect of the present invention, the present invention provides a color organic electroluminescent device, comprising: a substrate; a first electrode; a second electrode; and an organic functional layer disposed between the first and second electrodes, the organic The functional layer includes at least three sub-pixel organic functional areas of red, green, and blue, wherein at least one sub-pixel organic functional area includes: a phosphorescent light-emitting layer, which is a non-blue light-emitting layer; and a blue light-emitting layer, wherein the A blue light emitting layer covers the phosphorescent emitting layer.

On the other hand, the phosphorescent light emitting layer includes a red light emitting layer or a green light emitting layer.

On the other hand, the blue light emitting layer includes a blue fluorescent light emitting layer.

In another aspect, the organic electroluminescent device is a bottom emitting organic electroluminescent device.

On the other hand, the first electrode is an anode, and the second electrode is a cathode.

On the other hand, the organic functional layer includes: hole injection layer/hole transport layer/phosphorescent layer/blue fluorescent layer/electron transport layer and/or electron injection layer.

On the other hand, the organic functional layer includes: hole injection layer/hole transport layer/blue fluorescent layer/phosphorescent layer/electron transport layer and/or electron injection layer.

In another aspect, the organic electroluminescent device is a top-emitting organic electroluminescent device.

On the other hand, the first electrode is a reflective anode and the second electrode is a transmissive cathode.

On the other hand, the organic functional layer includes: hole injection layer/hole transport layer/phosphorescent layer/blue fluorescent layer/electron transport layer and/or electron injection layer.

On the other hand, the organic functional layer includes: hole injection layer/hole transport layer/blue fluorescent light emitting layer/phosphorescent light emitting layer/electron transport layer and/or electron injection layer.

On the other hand, there is a blocking layer between the blue fluorescent emitting layer and the phosphorescent emitting layer.

On the other hand, the triplet energy level of the material of the blocking layer is greater than or equal to the triplet energy level of the material of the phosphorescent emitting layer.

On the other hand, the material of the blocking layer is electron or hole.

On the other hand, the properties of the blue light emitting layer are electron properties or hole properties.

According to another aspect of the present invention, the present invention provides a method for preparing a color organic electroluminescent device, at least comprising the steps of: a) preparing an anode layer on a substrate; b) preparing an insulating layer on the anode layer to form a plurality of light-emitting Each pixel includes a phosphorescent sub-pixel and a blue light sub-pixel; c) transferring the above-mentioned substrate to the plasma processing chamber of the evaporation equipment for plasma processing; d) installing the above-mentioned substrate on the first open mask for Preparation of the hole injection layer; e) Putting the above substrate on a second open mask to prepare the hole transport layer; f) Using a precision mask to prepare the phosphorescent light-emitting layer on the phosphorescent sub-pixel part, and using the first Prepare the blue light-emitting layer with three open masks, the blue light-emitting layer covers the phosphorescent sub-pixel and the blue light sub-pixel; g) the above substrate is mounted on the fourth open mask to prepare the electron transport layer; h) the above substrate , install the fifth open mask to prepare the cathode; i) encapsulation.

On the other hand, the phosphorescent sub-pixels include red sub-pixels and green sub-pixels.

On the other hand, the red light-emitting layer is prepared by using the first precision mask, and the hollow part of the first precision mask corresponds to the red light sub-pixel; the green light-emitting layer is prepared by using the second precision mask, and the part of the second precision mask The hollow part corresponds to the green light sub-pixel.

On the other hand, the method also includes the step of preparing a blocking layer between the phosphorescence emitting layer and the blue light emitting layer.

On the other hand, the triplet energy level of the material of the blocking layer is greater than or equal to the triplet energy level of the material of the phosphorescent emitting layer.

Description of drawings

Fig. 1 schematically shows a structural diagram of a color organic electroluminescent device in the prior art;

Fig. 2 schematically shows the preparation process of the device of Fig. 1;

Fig. 3 schematically shows a structural diagram of a color organic electroluminescent device according to the present invention;

FIG. 4 schematically shows the fabrication process of the device in FIG. 3 .

reference sign

01' Substrate

02' anode

03'cathode

04'hole injection layer

05' hole transport layer

06' luminous layer

08' electron transport layer

101' precision mask

102' precision mask

103' precision mask

01 Substrate

02 anode

03 Cathode

04 Hole injection layer

05 Hole transport layer

06 Phosphorescent layer

07 blue light emitting layer

08' electron transport layer

101 precision mask

102 precision mask

103 open mask

104 precision mask

105 open mask

Detailed ways

First illustrate the structural formula of the main chemical substance of the application as follows:

General structure of the organic electroluminescent device of the present invention

The basic structure of the organic electroluminescent device of the present invention is shown in Figure 3, which includes: a substrate 01, the substrate 01 can be glass or a flexible substrate, and the flexible substrate is one of polyester and polyamide compounds Materials; the anode layer 02 can use inorganic materials or organic conductive polymers, preferably inorganic materials such as indium tin oxide (ITO for short); the cathode layer 03 generally uses metals with lower work functions such as lithium, calcium, strontium, aluminum, and indium Or their alloys with copper, gold, and silver, or electrode layers formed alternately between metals and metal fluorides, preferably LiF layers and Al layers accordingly.

The organic electroluminescence device in FIG. 3 also includes an organic functional layer, and the organic functional layer includes three sub-pixel organic functional areas of red, green and blue. Among them, the red and green sub-pixel organic functional areas include a hole injection layer (HIL) 04, a hole transport layer (HTL) 05, a phosphorescence emitting layer 06 (the phosphorescence emitting layer may include a yellow emitting layer (corresponding to a non- blue light sub-pixel part), or include a red light-emitting layer and a green light-emitting layer (corresponding to the red light sub-pixel and green light sub-pixel parts of the pixel respectively)), blue light-emitting layer 07 covering the red, green and blue sub-pixel parts (can be fluorescent light-emitting layer), electron transport layer (ETL)08. Among them, the blue light sub-pixel organic functional area includes a hole injection layer (HIL) 04, a hole transport layer (HTL) 05, a blue light emitting layer 07, an electron transport layer (ETL) 08, and the blue light emitting layer 07 covers red, green and The blue sub-pixel part may be a fluorescent light-emitting layer. Red light, green light sub-pixel organic functional area and blue light sub-pixel organic functional area have a common hole injection layer (HIL) 04, hole transport layer (HTL) 05, blue light emitting layer 07, electron transport layer (ETL) 08 . Although not shown, an electron injection layer EIL may be further included.

Fig. 3 shows the structure corresponding to the red light sub-pixel and the green light sub-pixel organic functional area, wherein, the phosphorescent light-emitting layer 06 is close to the side of the anode layer 02, and the blue light-emitting layer 07 is close to the side of the cathode layer 03, in this In some cases, the blue light-emitting layer is required to be electronic in nature, that is, the electron mobility of the blue light-emitting layer is greater than the hole mobility, preferably at least one order of magnitude greater. In another embodiment, the phosphorescent light-emitting layer is close to the cathode side, and the blue light-emitting layer is close to the anode side. In this case, the blue light-emitting layer is required to be a hole property, that is, the hole mobility of the blue light-emitting layer is greater than that of electrons. The mobility, preferably, is at least an order of magnitude greater.

When the phosphorescent emitting layer 06 is in direct contact with the blue emitting layer 07, and the phosphorescent emitting layer 06 is close to the anode side, and the blue emitting layer 07 is close to the cathode side, in order to achieve higher efficiency, preferably, the host material of the phosphorescent emitting layer materials with electronic properties. More preferably, the HOMO energy level of the blue light emitting layer is lower than the HOMO energy level of the phosphorescent emitting layer.

The phosphorescence emitting layer 06 and the blue light emitting layer 07 may not be in direct contact, and there is a blocking layer BL between the phosphorescent emitting layer and the blue emitting layer, the electron mobility of the blocking layer is greater than the hole mobility, and the triplet state of the material of the blocking layer is The energy level is greater than or equal to the triplet energy level of the host material of the phosphorescence emitting layer. Due to the existence of a separate blocking layer, there is no restriction on the HOMO energy level of the material of the blue light-emitting layer, and higher device efficiency can be achieved.

The following will focus on the structure of the non-blue light sub-pixel organic functional region, enumerating two types of bottom emission and top emission, and introducing their preparation methods.

Specific structure and preparation method of organic electroluminescent device of bottom emission type

The specific structure of the organic electroluminescent device of the bottom emission type is: anode/hole injection layer/hole transport layer/phosphorescent emitting layer/blue fluorescent emitting layer/electron transport layer and/or electron injection layer/cathode; or anode/ Hole injection layer/hole transport layer/blue fluorescent light emitting layer/phosphorescent light emitting layer/electron transport layer and/or electron injection layer/cathode.

Wherein the phosphorescence emitting layer is a non-blue emitting layer, preferably a red, orange, yellow, yellow-green, or green phosphorescent emitting layer.

When there is no blocking layer between the phosphorescent layer and the blue fluorescent layer, it is required:

When the phosphorescent emitting layer is close to the anode side and the blue fluorescent emitting layer is close to the cathode side, the electron mobility of the host material of the phosphorescent emitting layer is greater than the hole mobility, preferably at least one order of magnitude. When the phosphorescent emitting layer is close to the cathode side and the blue fluorescent emitting layer is close to the anode side, the hole mobility of the phosphorescent emitting layer is greater than the electron mobility, preferably at least an order of magnitude.

When there is a barrier layer between the phosphorescent emitting layer and the blue fluorescent emitting layer, it is required that:

When the phosphorescent light-emitting layer is close to the anode side and the blue fluorescent light-emitting layer is close to the cathode side, the electron mobility of the blocking layer is greater than the hole mobility, preferably at least an order of magnitude above; when the phosphorescent light-emitting layer is close to the negative side, the blue light fluorescence When the light-emitting layer is close to the anode side, the hole mobility of the blocking layer is greater than the electron mobility, preferably at least one order of magnitude, and the triplet energy level of the blocking layer material is greater than or equal to the triplet energy level of the host material of the phosphorescent layer.

There is no blue fluorescence emission in the electroluminescence spectrum of the above device structure.

The host material of the phosphorescent emitting layer in the above device structure can be one material, or two or more materials, and the dye of the phosphorescent emitting layer can also be one or two or more materials, and the barrier layer It can also be one material or two or more materials.

Comparative example 1 and embodiment 1:

The device structures of Table 1-1 Comparative Example 1 and Example 1

The device structure adopted in this technical solution is:

Anode/hole injection layer/hole transport layer/phosphorescent layer/electron transport layer/electron injection layer/cathode (comparative example 1-1)

Anode/hole injection layer/hole transport layer/phosphorescent emitting layer/blue fluorescent emitting layer/electron transport layer/electron injection layer/cathode (embodiment 1-1)

Anode/hole injection layer/hole transport layer/phosphorescent light-emitting layer/blocking layer/blue fluorescent light-emitting layer/electron transport layer/electron injection layer/cathode (embodiments 1-2 to 1-5)

The preparation steps of embodiment 1-2 are as follows:

① Clean the glass substrate 01 by using boiling detergent ultrasound and deionized water ultrasound, and place it under an infrared lamp for drying. Sputter a layer of ITO on the glass as the anode 02, with a film thickness of 180nm;

② Place the above-mentioned glass substrate with an anode in a vacuum chamber, evacuate to 1×10 ^-5 Pa, continue to vapor-deposit a layer of hole injection layer 04 on the above-mentioned anode layer film by double-source co-evaporation method, The rate is 0.1nm/s, and the evaporation film thickness is 150nm;

③ On the above-mentioned hole injection layer film, continue to vapor-deposit a layer of hole-transport layer 05 at a rate of 0.1nm/s, and the thickness of the vapor-deposited film is 20nm;

④The method of dual-source co-evaporation is then used to vapor-deposit the phosphorescent layer 06;

⑤ On the above-mentioned phosphorescent layer, continue to vapor-deposit a layer of barrier layer;

⑥Adopt the double-source co-evaporation method, and carry out the evaporation of the blue-light fluorescent emitting layer 07;

⑦ On top of the blue fluorescent light-emitting layer, continue to vapor-deposit a layer of electron transport material as electron transport layer 08;

⑧Finally, a LiF layer and an Al layer are sequentially evaporated on the above-mentioned light-emitting layer as the cathode layer 03 of the device, wherein the evaporation rate of the LiF layer is 0.01-0.02nm/s, the thickness is 0.7nm, and the evaporation rate of the Al layer It is 2.0nm/s, and the thickness is 150nm.

The device performance of table 1-2 comparative example 1 and embodiment 1

Comparative example 1-1 is a single yellow light device, and the electroluminescent spectrum of the device only emits the dye YD-1. Comparative example 1-1 is used as a standard device of a pure yellow light device for comparison with other devices. In Example 1-1, the blue fluorescent layer BH-1:BD-1 is directly added after the yellow phosphorescent layer, and the spectrum of the device still only emits yellow light and does not emit blue light, and the color coordinates are basically consistent with those of the comparative example . This is because: the host material of the yellow phosphorescent layer is electronic in nature, and its electron mobility is greater than the hole mobility, while the host material of the blue phosphorescent layer is also electronic in nature, so its recombination region is biased towards the anode in the yellow phosphorescent layer. In the area on one side, and at the interface between the yellow light layer and the hole transport layer, there is no effective recombination at the interface between the yellow light layer and the blue light layer, so there is no blue light emission in the spectrum of the device, only pure yellow light emission. And due to the addition of an extra layer of blue light, the holes and electrons inside the device are more balanced, and the efficiency of the device is improved.

In Example 1-2, a 5nm electronic blocking layer Bphen was added between the yellow light layer and the blue light layer, and there was no blue light emission in the spectrum of the device, which was consistent with the spectrum of the comparative example 1-1 of the yellow light device alone . The addition of a thin 5nm barrier layer still does not change the color coordinates of the device, and the efficiency has been further improved. This is because: since the properties of the barrier layer and the host material of the yellow phosphorescent layer are electronic, at this time, Its recombination area is still located in the area near the anode side in the yellow light layer, as well as the interface between the yellow light layer and the hole transport layer. At the interface between the blocking layer and the blue light layer, there is no effective recombination, so the blue light does not achieve luminescence, ensuring The color purity of yellow light.

In Example 1-3, Bphen is replaced by TPBI, and the host material of the yellow light layer is replaced by CBP. TPBI has the same properties as Bphen, that is, high electron mobility and high triplet energy level, and the results have reached the same The effect of the device is that there is only yellow light emission in the spectrum of the device, and there is no blue light emission. But different from Example 1-2, at this time, because the property of the host material of the yellow light layer is bipolar, the recombination region is located in the yellow light layer and at the interface between the yellow light layer and the barrier layer. Embodiments 1-4 use the doped forms of Bphen and TPBI, and the same effect can still be achieved. This shows that as long as the barrier layer has electronic properties, it can be applied in this scheme, and a wide variety of materials can be used.

In Example 1-5, after mixing TPBI with a concentration of 40% in CBP, compared with Example 1-4, the material of the barrier layer was replaced, but as long as the property of the barrier layer is guaranteed to be electronic, the embodiment can still be achieved. 1-4 have the same effect.

In summary, covering a layer of blue fluorescent layer behind the phosphorescent emitting layer can make the efficiency of the device higher, and the color coordinates of the device are basically unchanged. The above results are achieved through the adjustment of the composite area. Preferably, a blocking layer is added between the phosphorescent emitting layer and the blue fluorescent layer, so that the efficiency can be increased to a greater extent and the effect is better.

Moreover, no matter when the blue fluorescent light-emitting layer covers the phosphorescent layer, or when the phosphorescent layer covers the blue fluorescent light-emitting layer, compared with a device with only a phosphorescent light-emitting layer alone, the efficiency can be improved, and the color coordinates can be kept consistent.

The reason why it is preferred to add a blocking layer between the blue fluorescent emitting layer and the phosphorescent layer is because:

There is a separate blocking layer between the phosphorescent layer and the blue fluorescent layer. This blocking layer has a high triplet energy level, and its triplet energy level is higher than that of the fluorescent layer and the phosphorescent layer, thereby preventing the phosphorescent layer from The triplet energy of the material is transferred to the blue fluorescent layer, which avoids the waste of triplet exciton energy and improves the device efficiency. In addition, due to the function of the separate HBL layer, the recombination region can be located at the EML/HBL interface, which can also prevent excitons from recombining near the HTL, thereby further improving the device efficiency and improving the stability of the device. Furthermore, the balance of carriers can be adjusted by the thickness of the barrier layer, and can also be adjusted by the size of the carrier mobility of the material of the barrier layer, so the carriers are easier to balance, and the efficiency of the device is also improved. .

Comparative example 2 and embodiment 2

The preparation process of Comparative Example 2-1 and Examples 2-1 to 2-4 is the same as that of Example 1-2, except that the double-source evaporation of the yellow light layer is changed to three-source evaporation.

Embodiments 2-1 to 2-4 are basically the same in mechanism and implementation effect as Embodiments 1-1 to 1-5.

It can be shown from Comparative Example 2 and Example 2 that this technical solution is not only applicable to single-body devices, but also applicable to double-body devices.

The device structures of Table 2-1 Comparative Example 2 and Example 2

The device performance of table 2-2 comparative example 2 and embodiment 2

Comparative example 3 and embodiment 3

The preparation process of Comparative Example 3-1, and Examples 3-1 to 3-3 is the same as that of Example 1-2, except that the yellow light layer material is changed to the green light layer material.

Embodiment 3-1 to 3-3, its mechanism and implementation effect are basically consistent with embodiment 1-1 to 1-5.

It can be shown from Comparative Example 3 and Example 3 that this technical solution is not only applicable to yellow devices, but also applicable to other colors, such as green devices.

The device structures of Table 3-1 Comparative Example 3 and Example 3

The device performance of table 3-2 comparative example 3 and embodiment 3

Comparative example 4 and embodiment 4

The preparation process of Comparative Example 4-1 and Examples 4-1 to 4-3 is the same as that of Example 1-2, except that the material of the yellow light layer is changed to the material of the red light layer.

Embodiments 4-1 to 4-3 are basically the same in mechanism and implementation effect as Embodiments 1-1 to 1-5.

It can be shown from Comparative Example 4 and Example 4 that this technical solution is not only applicable to yellow and green devices, but also applicable to other colors, such as red light devices.

The device structures of Table 4-1 Comparative Example 4 and Example 4

The device performance of table 4-2 comparative example 4 and embodiment 4

Comparative example 5 and embodiment 5

The preparation process of Comparative Example 5-1 and Examples 5-1 to 5-3 is the same as that of Example 1-2, except that the yellow light layer is changed from a single yellow light dye to a green light sensitized red light structure.

Embodiments 5-1 to 5-3, its mechanism and implementation effect are basically consistent with those of Embodiments 1-1 to 1-5.

It can be shown from Comparative Example 5 and Example 5 that this technical solution is not only applicable to monochrome devices with single dye structures such as yellow, green, and red, but also applicable to devices with sensitized structures.

The device structures of Table 5-1 Comparative Example 5 and Example 5

The device performance of table 5-2 comparative example 5 and embodiment 5

Concrete comparative examples and examples for top-emitting OLEDs

In the top-emitting device structure, the reflective anode is characterized by a reflectivity > 90%, preferably a reflectivity > 95%. The materials used include silver (Ag) and its alloys, aluminum (Al) and its alloys, such as silver (Ag), silver and lead alloy (Ag:Pb), aluminum and neodymium alloy (Al:Nd), silver platinum copper Alloy (Ag:Pt:Cu) etc. When Ag and its alloys are used as the reflective layer, a layer of ITO may be included between the reflective layer and the substrate.

In the top-emitting device structure, the light transmittance of the cathode is 30%-90%, preferably 50%-80%. Under the condition of the light transmittance, an optical resonant cavity can be realized and a good outgoing light efficiency can be obtained. The material used is a metal with an extinction coefficient of less than 4.5 in the full range of wavelengths. In the range of blue light, the extinction coefficient is preferably less than 2.75. In the range of green light, the extinction coefficient is preferably less than 3.5. Preferably the extinction coefficient is less than 4.2. Materials that satisfy the above extinction coefficient can avoid the loss of emitted light when it passes through. An anti-reflection layer may be included on the cathode of the above-mentioned materials, and its refractive index is >1.6, preferably a material with a refractive index >1.8, so as to enhance the intensity of transmitted light and adjust the spectrum.

The device structure of table 6-1 comparative example 6 and embodiment 6

The device performance of table 6-2 comparative example 6 and embodiment 6

Brightness (cd/m2) Voltage (V) Current efficiency (cd/A) Color coordinates (x, y) Comparative example 6 1000 3.56 13.7 (0.66, 0.33) Example 6 1000 3.6 15.6 (0.66, 0.33)

Comparative Example 6 and Example 6 show that the technical solution is applicable to the red top-emitting structure, and the efficiency is improved, and the chromaticity can be maintained unchanged.

The device structure of Table 7-1 comparative example 7 and embodiment 7

The device performance of table 7-2 comparative example 7 and embodiment 7

Brightness (cd/m2) Voltage (V) Current efficiency (cd/A) Color coordinates (x, y) Comparative example 7 1000 3.24 74 (0.29, 0.67)

Example 7 1000 3.15 82 (0.27, 0.71)

Comparative Example 7 and Example 7 illustrate that this technical solution is applicable to the green top-emitting structure, and the efficiency has been improved, and the chromaticity can be adjusted to be more pure, which is suitable for preparing organic electroluminescent diodes (AMOLED) In other words, the color gamut can be improved, making the colors displayed on the entire AMOLED display more pure.

The device structure of table 8-1 comparative example 8 and embodiment 8-9

The device performance of table 8-2 comparative example 8 and embodiment 8-9

Brightness (cd/m2) Voltage (V) Current efficiency (cd/A) Color coordinates (x, y) Comparative example 8 1000 3.05 65 (0.52, 0.47) Example 8 1000 3.1 14 (0.65, 0.33) Example 9 1000 3.12 71 (0.30, 0.67)

Comparative Example 8 and Example 8 show that this technical solution is applicable to the top emission structure of green light sensitized red light, and the spectrum of the device has not only red light peaks, but also green light peaks. With this structure, pure red light or green light can be obtained respectively. This can increase the aperture ratio, simplify the process, and save costs when preparing a color screen with a top-emitting structure.

The above comparative examples and examples are all possible implementation modes of the present invention.

A preparation process of the organic electroluminescent device of the present invention is described below in conjunction with FIG. 4 . For clarity, the figure only shows a schematic diagram of vapor deposition of red, green and blue light-emitting layers. The preparation process includes steps.

1) Prepare an ITO thin film on the substrate 01;

2) Etching the ITO anode pattern;

3) An insulating layer is prepared on the ITO to form multiple light-emitting pixels, and each pixel has three sub-pixels of red, green and blue;

4) transferring the above-mentioned substrate to the plasma processing chamber of the evaporation equipment for plasma processing;

5) The above substrate is loaded with an open mask and transported to the first organic chamber for evaporation of the HIL layer;

6) The above substrate is loaded with an open mask and transported to the second organic chamber for evaporation of the HTL layer;

7) Put the above-mentioned substrate on the precision mask 101, transfer it to the third organic chamber, and then carry out precise alignment, so that the hollow part of the precision mask 101 just covers the red sub-pixel part of the substrate, and then perform red light emission layer evaporation;

8) Install the above-mentioned substrate with a precision mask 102, transfer it to the fourth organic chamber, and then carry out precise alignment, so that the hollow part of the precision mask 102 just covers the green sub-pixel part of the substrate, and then emit green light layer evaporation;

9) Put the above-mentioned substrate on the open mask 103, transfer it to the fifth organic chamber, and carry out the evaporation of the blue light-emitting layer, and the evaporation of this layer does not require a precision mask;

10) The above substrate is loaded with an open mask and transported to the sixth organic chamber for evaporation of the ETL layer;

11) The above substrate is loaded with an electrode open mask and sent to the electrode chamber for evaporation of the cathode;

12) Transfer the evaporated substrate to a glove box for packaging.

After the above steps, the preparation process of an organic electroluminescent device according to the present invention is completed.

When the organic electroluminescent device has a barrier layer, evaporation of the barrier layer can be performed in the above steps 7) and 8).

Claims (15)

1. A colored organic electroluminescence device, comprising: Substrate; first electrode; a second electrode; and The organic functional layer disposed between the first and second electrodes, the organic functional layer at least includes three sub-pixel organic functional areas of red, green, and blue, wherein at least one sub-pixel organic functional area includes: A phosphorescent emitting layer, which is a non-blue emitting layer; and A blue light-emitting layer, the blue light-emitting layer is a blue fluorescent light-emitting layer, Wherein, the blue fluorescent emitting layer covers the phosphorescent emitting layer, There is a blocking layer between the blue fluorescent emitting layer and the phosphorescent emitting layer, The triplet energy level of the material of the blocking layer is greater than or equal to the triplet energy level of the material of the phosphorescent emitting layer. 2. The color organic electroluminescent device according to claim 1, wherein the phosphorescent emitting layer comprises a red emitting layer or a green emitting layer. 3. The color organic electroluminescent device according to any one of claims 1-2, wherein the organic electroluminescent device is a bottom-emitting organic electroluminescent device. 4. The color organic electroluminescent device according to claim 3, wherein the first electrode is an anode, and the second electrode is a cathode. 5. The color organic electroluminescent device according to claim 4, wherein said at least one sub-pixel organic functional area comprises: Hole injection layer/hole transport layer/phosphorescent emitting layer/blocking layer/blue fluorescent emitting layer/electron transporting layer and/or electron injecting layer. 6. The color organic electroluminescent device according to claim 4, wherein said at least one sub-pixel organic functional area comprises: Hole injection layer/hole transport layer/blue fluorescent light emitting layer/blocking layer/phosphorescent light emitting layer/electron transport layer and/or electron injection layer. 7. The color organic electroluminescent device according to any one of claims 1-2, wherein the organic electroluminescent device is a top-emitting organic electroluminescent device. 8. The color organic electroluminescent device according to claim 7, wherein the first electrode is a reflective anode, and the second electrode is a transmissive cathode. 9. The color organic electroluminescent device according to claim 8, wherein said at least one sub-pixel organic functional area comprises: Hole injection layer/hole transport layer/phosphorescent emitting layer/blocking layer/blue fluorescent emitting layer/electron transporting layer and/or electron injecting layer. 10. The color organic electroluminescent device according to claim 8, wherein the organic functional area of the at least one sub-pixel comprises: Hole injection layer/hole transport layer/blue fluorescent light emitting layer/blocking layer/phosphorescent light emitting layer/electron transport layer and/or electron injection layer. 11. The color organic electroluminescence device according to claim 1, wherein the material of the blocking layer is electron or hole. 12. The color organic electroluminescent device according to claim 1, wherein the properties of the blue light emitting layer are electron properties or hole properties. 13. A method for preparing a colored organic electroluminescent device, comprising at least the steps of: a) preparing an anode layer on the substrate; b) preparing an insulating layer on the anode layer to form a plurality of light-emitting pixels, each pixel including phosphorescent sub-pixels and blue light sub-pixels; c) transferring the above-mentioned substrate to the plasma processing chamber of the evaporation equipment for plasma processing; d) mounting the above substrate on a first open mask to prepare a hole injection layer; e) installing the above substrate with a second open mask to prepare a hole transport layer; f) using a precision mask to prepare a phosphorescent light-emitting layer on the phosphorescent sub-pixel part, g) On the above-mentioned phosphorescent emitting layer, continue to vapor-deposit a layer of barrier layer, the triplet energy level of the material of the barrier layer is greater than or equal to the triplet energy level of the material of the phosphorescent emitting layer; h) preparing a blue light emitting layer using a third open mask, the blue light emitting layer covering the phosphorescent sub-pixels and the blue light sub-pixels; i) installing the above substrate with a fourth open mask to prepare an electron transport layer; j) installing the above-mentioned substrate on a fifth open mask to prepare the cathode; k) Encapsulation. 14. The method of claim 13, wherein the phosphorescent sub-pixels comprise red sub-pixels and green sub-pixels. 15. The method according to claim 14, wherein the red light-emitting layer is prepared by using the first precision mask, and the hollow part of the first precision mask corresponds to the red light sub-pixel; the green light-emitting layer is prepared by using the second precision mask Layer, the hollow part of the second precision mask corresponds to the green light sub-pixel.