SU1371474A1 - Photoelectromagnetic receiver - Google Patents

Abstract

The invention relates to semiconductor electronics, namely, to radiation detectors, and can be used to create photodetectors based on indium antimonide, a solid cadmium-mercury-tellurium solution, and others. The purpose of the invention is to reduce the weight and size characteristics of the receiver. The photoelectromagnetic receiver contains a substrate, a semiconductor plate with contacts placed on it. The substrate is made of an anisotropic high-coercive ferromagnet having a domain structure with a straight line boundary between each pair of domains, the magnetization in which is opposite to each other and perpendicular to the plane of the substrate. A semiconductor wafer is located above the domain boundaries. The backplate contains an additional plate of an isotropic low-coercive ferromagnet. 1 ep f-ly, 1 ill. from the next

Description

with m

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The invention relates to semiconductor optoelectronics, in particular to radiation receivers, and can be used to create a photoreceptor based on indium antimonide, cadmium-mercury-tellurium (CRT) solid solution and others.

The aim of the invention is to reduce the peso-dimensions of the characteristics of a photoelectromagnetic receiver (FEM receiver),

The drawing shows the proposed receiver.

The FEM receiver contains a substrate 1 made of a high-performance ferromagnet. In a ferromagnetic substrate 1, domains 2 are formed, magnetized opposite to each other and perpendicular to the plane of substrate 1, Pa substrate 1 has a photosensitive semiconductor plate 3 with ohmic -1 and i and 5 contacts, to which M are attached electrical outlets 6 and 7. Plate 3 is placed above interface 8 between domains 2.

The substrate can be placed on an additional ferromagnetic plate 9.

Plate 3 is made either in the form of a rectangular polssky from the contact -sh i; a edges in the case of two domains, or in 1111 strips forming the shape of a snake, where each strip is located on the center of B between domains.

Plate 9 is made of coicercite, ganogs and: zotropnorno ferromagnetic and 1 is designed for magnetic flux from one side, which leads to an increased; ™ magnetic field strength

conductor plate

The magnetization in the domains is equal to the saturation magnetization of the ferromagnet material chosen for the substrate. The optimal magnitude of the magnetic field induction, which provides the maximum sensitivity for FEM-P1 of the antimonide-based indium emulator, is 4 kG, for TCT - 8 kG, the type of ferromagnet for the substrates of FEM-receivers and antimonide indium and MCT must be different. For FEC - receiver on the basis of КРТ, the connection ЗгСо ", magnetization is suitable

Substrate 1 is made of a ferromag .g which, depending on the grade of the matrix, which has a large uniaxial anisotropy and coercivity, is sufficient for a domain structure with a magnetization perpendicular to the substrate plane.

The domains 2 formed in the ferromagnetic substrate 1 in a semiconductor wafer 3 create a magnetic field with power lines parallel to the plane of the substrate 1. The strength of the magnetic field is described by the expressions: in the case of two domains

within the range of 7.8-10.2 kG; for an FEM receiver based on indium antimonide, textured barium or strontium ferrites are suitable, magnetized

50 of which are in the range of 3.2-5.6 kG.

Domain structures are artificially created by an external magnetic field; therefore, they use ferromagnets with aa

55 with a low coercivity, in such materials, the domain structure retains the magnetization distribution created by the external magnetic field. A domain structure has been created.

U f L (x / g) II b / 2z)

K, U, z; TG. (X / z) 2 + (1-h / 2z)

(one)

in the case of a periodic domain structure

„Ifg. --tr. - nlih

H, (x, z) Zll

Cos

2t

(2)

coordinate along substrate 1; coordinate perpendicular to the plane of the substrate 1; material magnetization

substrates;

the period of the domain structure consisting of two domains; substrate thickness.

From the formulas (1) and (2), it follows that the maximum of the parallel substrate, the component of the magnetic field strength in both structures, is above the boundary between domains 8. When removed from the substrate 1, it rapidly decreases. Thus, the magnetic field is localized practically only in the volume of the semiconductor plate 3.

The magnetization in the domains is equal to the saturation magnetization of the ferromagnet material chosen for the substrate. The optimal magnitude of the magnetic field induction, which provides the maximum sensitivity for FEM-P1 of the antimonide-based indium emulator, is 4 kG, for TCT - 8 kG, the type of ferromagnet for the substrates of FEM-receivers and antimonide indium and MCT must be different. For FEC - receiver on the basis of КРТ, the connection ЗгСо ", magnetization

which, depending on the brand, is in the range of 7.8-10.2 kgf; For the FEM - receiver based on antimonide indium, textured barium or strontium ferrites are suitable, whose magnetizations lie within 3.2–5.6 kG.

Domain structures are artificially created by an external magnetic field; therefore, they use ferromagnets with a55 coaxiality. In such materials, the domain structure retains the magnetization distribution created by the external magnetic field. A domain structure has been created.

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it is not thermodynamically equilibrium, but it is stable, so it is kept by the large coercivity of the material, and by the force due to the fact that the magnetic moments in the domains are in the magnetic field of the neighboring domains.

Example. In the simplest case, to create two domains, two ferromagnetic plates with oppositely directed magnetization are glued together. The junction of the two plates hu to the ends forms the interface

The substrates 1 create a field opposite to the direction in each of the two adjacent strips of the semiconductor 3, which

 tj determines the possibility of sequential addition of emf generated by the radiation of n to each strip of semiconductor

ka, n the total emf of the snake. In such a con10

The structure of the resistance of the 1T receiver increases, respectively, the sensitivity of the receiver increases.

The use of a ferromagnetic substrate I with domains 2 formed in it makes it possible to exclude from the equilibrium between the domains. The formation and ferro-structure of the receiver of a permanent magnet, a magnetic plate of a domain strucht-usually of the greatest Kittel-type gap, is carried out by reversing the ferromagnet by passing a pulsed current through a shaped conductor, a special flame formed with POM1TC)

on the surface of a ferromagnetic substrate 1. After the remagnetization, the penetrator is etched off.

The receiver works in a sugary way.

The received radiation is absorbed in semiconductor wafer 3. Near its surface, the radiation creates non-equilibrium charge carriers. They diffuse into the depth of the semi-transverse to the unlighted surface. The two u-depth U carriers are separated by a magnetic field and create an emf at contacts 4 and 5 in an open circuit in a closed circuit. The receiver may be illuminated by the received radiation either from the side of the semiconductor wafer 3, or, if a ferromagnetic substrate 1 is used, is transparent to the received radiation, from the side of the substrate 1.

In semiconductor receivers

20

measures, thereby reducing its weight and dimensions.

The FEM receiver adopts an aposkuy suitable for cooling with a quick release mode.

Claims (2)

1. Photoelectromagnetic receiver, supporting the substrate, placed on it a photosensitive semiconductor plate with contact. I-sh, about t - l -; This is due to the fact that, with the CESO j b T lane, the weight and dimensional characteristics, while maintaining high speed, the substrate is made of an anisotropic high-profile ferromagnet having a domain 3c c i) an pattern with a rectilinear boundary between each pair up to; -; eno9, the magnetization of which is opposite to each other and perpendicular to the plane of the substrate, 3 semiconductor wafer is placed above the domain boundaries, 2. Receiver according to claim 1, in which the substrate contains an additional plate of iso4O. The substrates 1 create a field opposite to the direction in each of the two adjacent strips of the semiconductor 3, which  tj determines the possibility of sequential addition of emf generated by the radiation of n to each strip of semiconductor ka, n the total emf of the snake. In such a con10 measures, thereby reducing its weight and dimensions. The FEM receiver adopts an aposkuy suitable for cooling with a quick release mode. Invention Formula 1. Photoelectromagnetic receiver, supporting the substrate, placed on it a photosensitive semiconductor plate with contact. I-sh, about t - l -; This is due to the fact that, with a centrifugal T of the weight and dimensional characteristics, while maintaining high speed, the substrate is made of an anisotropic high-profile ferromagnet having a domain c i) an pattern with a rectilinear boundary between each pair up to; -; eno9, the magnetization in which is opposite to each other and perpendicular to the plane of the substrate, 3 semiconductor wafer placed above the domain boundaries, 2. The receiver according to claim 1, about tl and h a yu shch and the fact that the substrate contains an additional plastic p / gastina 3 in the form of narrow strips, obtropic low-coercive ferro-emitting snake, strip domains of magnetics.