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SG87155A1 - Semiconductor device having photodetector and optical pickup system using the same - Google Patents

Semiconductor device having photodetector and optical pickup system using the same

Info

Publication number
SG87155A1
SG87155A1 SG200004526A SG200004526A SG87155A1 SG 87155 A1 SG87155 A1 SG 87155A1 SG 200004526 A SG200004526 A SG 200004526A SG 200004526 A SG200004526 A SG 200004526A SG 87155 A1 SG87155 A1 SG 87155A1
Authority
SG
Singapore
Prior art keywords
photodetector
semiconductor device
same
optical pickup
pickup system
Prior art date
Application number
SG200004526A
Other languages
English (en)
Inventor
Arai Chihiro
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG87155A1 publication Critical patent/SG87155A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
SG200004526A 1999-08-23 2000-08-16 Semiconductor device having photodetector and optical pickup system using the same SG87155A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23576099A JP4131059B2 (ja) 1999-08-23 1999-08-23 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG87155A1 true SG87155A1 (en) 2002-03-19

Family

ID=16990840

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200004526A SG87155A1 (en) 1999-08-23 2000-08-16 Semiconductor device having photodetector and optical pickup system using the same

Country Status (6)

Country Link
US (1) US6376871B1 (ja)
EP (1) EP1079436A2 (ja)
JP (1) JP4131059B2 (ja)
KR (1) KR20010021371A (ja)
SG (1) SG87155A1 (ja)
TW (1) TW461119B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092424A (ja) * 2001-07-12 2003-03-28 Sharp Corp 分割型受光素子および回路内蔵型受光素子および光ディスク装置
US7269359B1 (en) * 2002-12-18 2007-09-11 Itt Manufacturing Enterprises, Inc. Focal plane array with synchronous detection circuits for an active remote sensing system
EP1544966B1 (en) * 2003-12-16 2006-11-29 Matsushita Electric Industrial Co., Ltd. Optical semiconductor device and method for fabricating the same
JP4058034B2 (ja) * 2004-10-25 2008-03-05 松下電器産業株式会社 光半導体装置
JP4647404B2 (ja) * 2004-07-07 2011-03-09 三星電子株式会社 転送ゲート電極に重畳しながら自己整列されたフォトダイオードを有するイメージセンサの製造方法
KR100653691B1 (ko) * 2004-07-16 2006-12-04 삼성전자주식회사 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들
JP4100474B2 (ja) * 2004-07-30 2008-06-11 松下電器産業株式会社 光半導体装置及びその製造方法
JP4086860B2 (ja) 2005-05-23 2008-05-14 三洋電機株式会社 半導体装置
JP2006339533A (ja) 2005-06-03 2006-12-14 Sanyo Electric Co Ltd 半導体装置
JP4618064B2 (ja) * 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
JP5216188B2 (ja) * 2005-09-30 2013-06-19 パナソニック デバイスＳｕｎｘ株式会社 光電センサ用ｉｃ、及び光電センサ
JP2007317768A (ja) * 2006-05-24 2007-12-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2007317767A (ja) * 2006-05-24 2007-12-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP4800125B2 (ja) 2006-06-28 2011-10-26 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置とその製造方法
US7943054B2 (en) 2007-03-27 2011-05-17 Sanyo Electric Co., Ltd. Method for manufacturing semiconductor integrated circuit device
JP5049036B2 (ja) 2007-03-28 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP5967944B2 (ja) * 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
JP2016146223A (ja) * 2015-02-06 2016-08-12 新科實業有限公司ＳＡＥ Ｍａｇｎｅｔｉｃｓ（Ｈ．Ｋ．）Ｌｔｄ． 光源ユニットとこれを用いた熱アシスト磁気記録ヘッド、及び光源ユニットに用いられる光源
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0353509A1 (de) * 1988-08-04 1990-02-07 Siemens Aktiengesellschaft Verfahren zur Herstellung einer integrierten Halbleiteranord- nung mit einem Photoelement und einem npn-Bipolartransistor in einem Siliziumsubstrat
EP0501316A2 (en) * 1991-02-27 1992-09-02 Sanyo Electric Co., Ltd Optical semiconductor device
EP0778621A2 (en) * 1995-12-06 1997-06-11 Sony Corporation Semiconductor device comprising a photodiode and a bipolar element, and method of fabrication
EP0855743A2 (en) * 1997-01-27 1998-07-29 Sharp Kabushiki Kaisha Photodiode with a divided active region

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2799540B2 (ja) * 1993-04-19 1998-09-17 シャープ株式会社 受光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0353509A1 (de) * 1988-08-04 1990-02-07 Siemens Aktiengesellschaft Verfahren zur Herstellung einer integrierten Halbleiteranord- nung mit einem Photoelement und einem npn-Bipolartransistor in einem Siliziumsubstrat
EP0501316A2 (en) * 1991-02-27 1992-09-02 Sanyo Electric Co., Ltd Optical semiconductor device
EP0778621A2 (en) * 1995-12-06 1997-06-11 Sony Corporation Semiconductor device comprising a photodiode and a bipolar element, and method of fabrication
EP0855743A2 (en) * 1997-01-27 1998-07-29 Sharp Kabushiki Kaisha Photodiode with a divided active region

Also Published As

Publication number Publication date
US6376871B1 (en) 2002-04-23
EP1079436A2 (en) 2001-02-28
JP4131059B2 (ja) 2008-08-13
TW461119B (en) 2001-10-21
KR20010021371A (ko) 2001-03-15
JP2001060713A (ja) 2001-03-06

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