SG63757A1 - Adding impurities to improve the efficiency of allngan quantum well led's - Google Patents
Adding impurities to improve the efficiency of allngan quantum well led'sInfo
- Publication number
- SG63757A1 SG63757A1 SG1997003691A SG1997003691A SG63757A1 SG 63757 A1 SG63757 A1 SG 63757A1 SG 1997003691 A SG1997003691 A SG 1997003691A SG 1997003691 A SG1997003691 A SG 1997003691A SG 63757 A1 SG63757 A1 SG 63757A1
- Authority
- SG
- Singapore
- Prior art keywords
- allngan
- efficiency
- improve
- quantum well
- adding impurities
- Prior art date
Links
- 239000012535 impurity Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81509797A | 1997-03-12 | 1997-03-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG63757A1 true SG63757A1 (en) | 1999-03-30 |
Family
ID=25216843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1997003691A SG63757A1 (en) | 1997-03-12 | 1997-10-08 | Adding impurities to improve the efficiency of allngan quantum well led's |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH10256601A (en) |
| DE (1) | DE19753470A1 (en) |
| GB (1) | GB2323210A (en) |
| SG (1) | SG63757A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014455B1 (en) | 1997-07-25 | 2006-07-12 | Nichia Corporation | Nitride semiconductor device |
| EP0996173B1 (en) * | 1998-10-23 | 2015-12-30 | Xerox Corporation | Semiconductor structures including polycrystalline GaN layers and method of manufacturing |
| JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| JP3719047B2 (en) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | Nitride semiconductor device |
| DE10015371A1 (en) * | 2000-03-28 | 2001-10-18 | Huga Optotech Inc | Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| CN1252883C (en) | 2001-04-12 | 2006-04-19 | 日亚化学工业株式会社 | Gallium nitride compound semiconductor element |
| DE60225322T2 (en) | 2001-11-05 | 2009-02-26 | Nichia Corp., Anan | SEMICONDUCTOR ELEMENT |
| JP3898537B2 (en) | 2002-03-19 | 2007-03-28 | 日本電信電話株式会社 | Nitride semiconductor thin film forming method and nitride semiconductor light emitting device |
| WO2004051759A1 (en) * | 2002-12-03 | 2004-06-17 | Nec Corporation | Semiconductor optical device having quantum well structure and its manufacturing method |
| RU2306634C1 (en) * | 2006-08-08 | 2007-09-20 | Закрытое Акционерное Общество "Светлана - Оптоэлектроника" | Light-emitting semiconductor heterostructure |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| CN112366255B (en) * | 2020-09-30 | 2021-12-07 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832112A (en) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | Group III nitride semiconductor light emitting device |
| KR100267839B1 (en) * | 1995-11-06 | 2000-10-16 | 오가와 에이지 | Nitride semiconductor devices |
-
1997
- 1997-10-08 SG SG1997003691A patent/SG63757A1/en unknown
- 1997-12-02 DE DE19753470A patent/DE19753470A1/en active Pending
-
1998
- 1998-02-19 JP JP3692498A patent/JPH10256601A/en active Pending
- 1998-03-10 GB GB9805086A patent/GB2323210A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2323210A (en) | 1998-09-16 |
| JPH10256601A (en) | 1998-09-25 |
| DE19753470A1 (en) | 1998-09-24 |
| GB9805086D0 (en) | 1998-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ID28947A (en) | METHODS TO REDUCE WOMEN'S URINER INCONINENCIA | |
| SG63757A1 (en) | Adding impurities to improve the efficiency of allngan quantum well led's | |
| GB2325139B (en) | Improvements relating to mowers | |
| GB9907122D0 (en) | Improvements relating to lighting | |
| GB9200851D0 (en) | Improvements relating to life jackets | |
| GB9709404D0 (en) | Improvements in or relating to the formation of images | |
| ITMI961139A0 (en) | BICYCLE CRANK HIGHLY EASY TO MANUFACTURE. | |
| GB9701669D0 (en) | Improvements to structure | |
| GB9709331D0 (en) | Improvements to engines | |
| GB9302184D0 (en) | Improvements relating to the formation of cartosn | |
| GB9701201D0 (en) | To improve the efficiency of bicycle propulsion | |
| BA96175A (en) | 4-Tia-1-azabicyclo 3.2.2.heptane-3-imino-2-isopropylidene-7-oxo analogs to beta-lactams preparation and use | |
| GB9423792D0 (en) | Improvements relating to life jackets | |
| GB9509370D0 (en) | "Life saving compositions" | |
| TW341918U (en) | Addition 1 to the improvement of album transparent cover | |
| IT1285144B1 (en) | MECHANICAL DEVICE TO IMPROVE THE EFFICIENCY OF THE PEDALING. | |
| GB9522957D0 (en) | Improvements relating to ship's fin stabilizers | |
| GB9803359D0 (en) | Improvements relating to motion generators | |
| GB9706964D0 (en) | Improvements relating to brakes | |
| GB9521298D0 (en) | Improvements relating to draw cord fastenings | |
| IL134455A0 (en) | M113a1/a2 to m113a3 conversion | |
| GB9308362D0 (en) | Improvements relating to personal ornaments | |
| GB9214043D0 (en) | Improvements relating to sachets | |
| TW315750U (en) | Improved structure to increase the exhausting quantity of water | |
| IL110569A0 (en) | Intermediate to 4,4'-diamino-3-methyl- diphenylether-bis-maleimide |