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GB9805086D0 - Light emitting device - Google Patents

Light emitting device

Info

Publication number
GB9805086D0
GB9805086D0 GBGB9805086.7A GB9805086A GB9805086D0 GB 9805086 D0 GB9805086 D0 GB 9805086D0 GB 9805086 A GB9805086 A GB 9805086A GB 9805086 D0 GB9805086 D0 GB 9805086D0
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting device
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9805086.7A
Other versions
GB2323210A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB9805086D0 publication Critical patent/GB9805086D0/en
Publication of GB2323210A publication Critical patent/GB2323210A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
GB9805086A 1997-03-12 1998-03-10 Light emitting device Withdrawn GB2323210A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81509797A 1997-03-12 1997-03-12

Publications (2)

Publication Number Publication Date
GB9805086D0 true GB9805086D0 (en) 1998-05-06
GB2323210A GB2323210A (en) 1998-09-16

Family

ID=25216843

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9805086A Withdrawn GB2323210A (en) 1997-03-12 1998-03-10 Light emitting device

Country Status (4)

Country Link
JP (1) JPH10256601A (en)
DE (1) DE19753470A1 (en)
GB (1) GB2323210A (en)
SG (1) SG63757A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366255A (en) * 2020-09-30 2021-02-12 华灿光电（浙江）有限公司 Light emitting diode epitaxial wafer and preparation method thereof

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
EP0996173B1 (en) * 1998-10-23 2015-12-30 Xerox Corporation Semiconductor structures including polycrystalline GaN layers and method of manufacturing
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
KR100683877B1 (en) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Laser Devices
JP3719047B2 (en) * 1999-06-07 2005-11-24 日亜化学工業株式会社 Nitride semiconductor device
DE10015371A1 (en) * 2000-03-28 2001-10-18 Huga Optotech Inc Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
KR100902109B1 (en) 2001-04-12 2009-06-09 니치아 카가쿠 고교 가부시키가이샤 Gallium Nitride Compound Semiconductor Device
KR100597532B1 (en) 2001-11-05 2006-07-10 니치아 카가쿠 고교 가부시키가이샤 Semiconductor device
JP3898537B2 (en) 2002-03-19 2007-03-28 日本電信電話株式会社 Nitride semiconductor thin film forming method and nitride semiconductor light emitting device
WO2004051759A1 (en) * 2002-12-03 2004-06-17 Nec Corporation Semiconductor optical device having quantum well structure and its manufacturing method
RU2306634C1 (en) * 2006-08-08 2007-09-20 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Light-emitting semiconductor heterostructure
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832112A (en) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd Group III nitride semiconductor light emitting device
DE69636088T2 (en) * 1995-11-06 2006-11-23 Nichia Corp., Anan A nitride compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366255A (en) * 2020-09-30 2021-02-12 华灿光电（浙江）有限公司 Light emitting diode epitaxial wafer and preparation method thereof

Also Published As

Publication number Publication date
JPH10256601A (en) 1998-09-25
GB2323210A (en) 1998-09-16
DE19753470A1 (en) 1998-09-24
SG63757A1 (en) 1999-03-30

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)