SG11201801176SA - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- SG11201801176SA SG11201801176SA SG11201801176SA SG11201801176SA SG11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA
- Authority
- SG
- Singapore
- Prior art keywords
- photodetector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015169779 | 2015-08-28 | ||
| PCT/JP2016/003907 WO2017038072A1 (fr) | 2015-08-28 | 2016-08-26 | Photodétecteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201801176SA true SG11201801176SA (en) | 2018-03-28 |
Family
ID=58186920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201801176SA SG11201801176SA (en) | 2015-08-28 | 2016-08-26 | Photodetector |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10720543B2 (fr) |
| EP (1) | EP3343641B1 (fr) |
| JP (2) | JPWO2017038072A1 (fr) |
| CN (1) | CN107924961B (fr) |
| CA (1) | CA2995668C (fr) |
| SG (1) | SG11201801176SA (fr) |
| WO (1) | WO2017038072A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6867868B2 (ja) * | 2017-05-15 | 2021-05-12 | 日本電信電話株式会社 | 光検出器 |
| JP7087308B2 (ja) * | 2017-09-13 | 2022-06-21 | 富士通株式会社 | 受光器、バランス型受光器、受光器の製造方法 |
| JP2019078908A (ja) * | 2017-10-25 | 2019-05-23 | 日本電信電話株式会社 | 光モニタ回路 |
| CN108447938B (zh) * | 2018-02-27 | 2019-12-20 | 中国科学院微电子研究所 | 光电探测器 |
| JP7062276B2 (ja) * | 2018-04-04 | 2022-05-06 | 国立研究開発法人産業技術総合研究所 | 光導波路型受光素子構造 |
| JP6981365B2 (ja) * | 2018-05-17 | 2021-12-15 | 日本電信電話株式会社 | 光検出器 |
| JP7125822B2 (ja) * | 2018-06-06 | 2022-08-25 | 富士通オプティカルコンポーネンツ株式会社 | 光半導体素子及び光伝送装置 |
| JP7212254B2 (ja) | 2019-01-16 | 2023-01-25 | 日本電信電話株式会社 | 光検出器 |
| WO2023248369A1 (fr) * | 2022-06-22 | 2023-12-28 | 日本電信電話株式会社 | Photodétecteur |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001068717A (ja) * | 1999-08-25 | 2001-03-16 | Nippon Telegr & Teleph Corp <Ntt> | 進行波型半導体光検出器 |
| US6576532B1 (en) * | 2001-11-30 | 2003-06-10 | Motorola Inc. | Semiconductor device and method therefor |
| US7453132B1 (en) * | 2002-06-19 | 2008-11-18 | Luxtera Inc. | Waveguide photodetector with integrated electronics |
| JP5232981B2 (ja) | 2008-03-07 | 2013-07-10 | 日本電気株式会社 | ＳｉＧｅフォトダイオード |
| US8330242B2 (en) * | 2008-03-28 | 2012-12-11 | Nec Corporation | Semiconductor light-receiving element |
| US8346025B2 (en) * | 2009-05-18 | 2013-01-01 | Alcatel Lucent | Compact electrooptic modulator |
| JP5370857B2 (ja) * | 2010-03-04 | 2013-12-18 | 日本電信電話株式会社 | ゲルマニウム受光器およびその製造方法 |
| EP2736084B1 (fr) * | 2012-11-22 | 2018-09-19 | IMEC vzw | Élément photodétecteur à avalanche avec un champ électrique élevé |
| US9666736B2 (en) * | 2013-01-30 | 2017-05-30 | Agency For Science, Technology And Research | Photodetector arrangement |
| JP6020295B2 (ja) * | 2013-03-28 | 2016-11-02 | 富士通株式会社 | Ｓｉ光集積回路装置及びその製造方法 |
| CN105810774B (zh) * | 2016-03-30 | 2018-05-22 | 华中科技大学 | 一种高功率大带宽锗硅光电探测器 |
-
2016
- 2016-08-26 CN CN201680048167.2A patent/CN107924961B/zh active Active
- 2016-08-26 WO PCT/JP2016/003907 patent/WO2017038072A1/fr active Application Filing
- 2016-08-26 EP EP16841106.4A patent/EP3343641B1/fr active Active
- 2016-08-26 JP JP2017537537A patent/JPWO2017038072A1/ja not_active Ceased
- 2016-08-26 SG SG11201801176SA patent/SG11201801176SA/en unknown
- 2016-08-26 CA CA2995668A patent/CA2995668C/fr active Active
- 2016-08-28 US US15/751,795 patent/US10720543B2/en active Active
-
2018
- 2018-06-25 JP JP2018120129A patent/JP6560795B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CA2995668A1 (fr) | 2017-03-09 |
| CN107924961B (zh) | 2020-03-03 |
| EP3343641A4 (fr) | 2019-05-15 |
| JPWO2017038072A1 (ja) | 2017-12-14 |
| CN107924961A (zh) | 2018-04-17 |
| US10720543B2 (en) | 2020-07-21 |
| EP3343641B1 (fr) | 2021-03-17 |
| CA2995668C (fr) | 2020-12-01 |
| WO2017038072A1 (fr) | 2017-03-09 |
| JP2018142751A (ja) | 2018-09-13 |
| JP6560795B2 (ja) | 2019-08-14 |
| US20180233618A1 (en) | 2018-08-16 |
| EP3343641A1 (fr) | 2018-07-04 |
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