[go: up one dir, main page]

SG11201505099TA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG11201505099TA
SG11201505099TA SG11201505099TA SG11201505099TA SG11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA SG 11201505099T A SG11201505099T A SG 11201505099TA
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SG11201505099TA
Inventor
Tatsuya Honda
Masashi Tsubuku
Yusuke Nonaka
Takashi Shimazu
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG11201505099TA publication Critical patent/SG11201505099TA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
SG11201505099TA 2011-09-29 2012-09-20 Semiconductor device SG11201505099TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011215740 2011-09-29
PCT/JP2012/074816 WO2013047631A1 (en) 2011-09-29 2012-09-20 Semiconductor device

Publications (1)

Publication Number Publication Date
SG11201505099TA true SG11201505099TA (en) 2015-08-28

Family

ID=47991725

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201505099TA SG11201505099TA (en) 2011-09-29 2012-09-20 Semiconductor device

Country Status (8)

Country Link
US (2) US9219160B2 (en)
JP (10) JP5279940B2 (en)
KR (2) KR101424799B1 (en)
CN (3) CN105702741B (en)
DE (2) DE112012004076T5 (en)
SG (1) SG11201505099TA (en)
TW (3) TWI550876B (en)
WO (1) WO2013047631A1 (en)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
SG11201505099TA (en) * 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
DE112012004061B4 (en) 2011-09-29 2024-06-20 Semiconductor Energy Laboratory Co., Ltd. semiconductor device
KR20130040706A (en) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
DE112012004307B4 (en) 2011-10-14 2017-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102495290B1 (en) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102036908B1 (en) * 2013-04-19 2019-10-28 삼성디스플레이 주식회사 Organic light emitting diode display
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9425217B2 (en) * 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6392874B2 (en) * 2013-12-26 2018-09-19 カティーバ， インコーポレイテッド Apparatus and techniques for heat treatment of electronic devices
KR101604812B1 (en) 2014-01-15 2016-03-18 삼성전자주식회사 Medical image processing apparatus and medical image processing method thereof
KR101813828B1 (en) 2014-01-21 2017-12-29 카티바, 인크. Apparatus and techniques for electronic device encapsulation
TWI685116B (en) * 2014-02-07 2020-02-11 日商半導體能源研究所股份有限公司 Semiconductor device
KR102390045B1 (en) 2014-04-30 2022-04-22 카티바, 인크. Gas cushion apparatus and techniques for substrate coating
JP6357664B2 (en) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ Thin film transistor and manufacturing method thereof
US9704704B2 (en) * 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
KR102222131B1 (en) * 2014-11-28 2021-03-04 삼성전자주식회사 Device Case for Controlling Display Panel for the Case and Method Thereof
JP6500202B2 (en) * 2014-12-08 2019-04-17 株式会社Ｊｏｌｅｄ Thin film transistor and method of manufacturing thin film transistor
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US10147823B2 (en) * 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI578546B (en) * 2015-05-28 2017-04-11 鴻海精密工業股份有限公司 Method for manufacturing thin film transistor
US10115900B2 (en) 2015-11-16 2018-10-30 Kateeva, Inc. Systems and methods for thermal processing of a substrate
CN105355802B (en) * 2015-11-26 2018-04-13 昆山国显光电有限公司 Top illuminating device and preparation method thereof
JP2018157167A (en) * 2017-03-21 2018-10-04 株式会社リコー Field effect transistor, display element, display device, system
CN107123671B (en) * 2017-05-19 2019-10-29 电子科技大学 Grade doping IGZO thin film transistor (TFT) based on organic insulator and preparation method thereof
KR102348115B1 (en) 2017-05-25 2022-01-07 현대자동차주식회사 Method for starting engine for hybrid electric vehicle
KR102351372B1 (en) 2017-07-06 2022-01-14 삼성전자주식회사 Electronic device with display
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
US12363970B2 (en) * 2022-02-15 2025-07-15 Taiwan Semiconductor Manufacturing Company Limited Germanium tin oxide-containing semiconductor device and methods for forming the same
JP7111920B1 (en) 2022-02-18 2022-08-02 株式会社フジクラ digital phase shifter

Family Cites Families (158)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (en) 1984-03-23 1985-10-08 Fujitsu Ltd Thin film transistor
JPH0244256B2 (en) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPS63210023A (en) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater Compound having a hexagonal layered structure represented by InGaZn↓4O↓7 and its manufacturing method
JPH0244260B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244258B2 (en) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244262B2 (en) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH0244263B2 (en) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP3479375B2 (en) 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
DE69635107D1 (en) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv SEMICONDUCTOR ARRANGEMENT WITH A TRANSPARENT CIRCUIT ELEMENT
JP3625330B2 (en) 1995-12-26 2005-03-02 フィガロ技研株式会社 Gas sensor
JP3625598B2 (en) 1995-12-30 2005-03-02 三星電子株式会社 Manufacturing method of liquid crystal display device
JP3355949B2 (en) * 1996-08-16 2002-12-09 日本電気株式会社 Method for forming plasma CVD insulating film
JP4170454B2 (en) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 Article having transparent conductive oxide thin film and method for producing the same
JP2000150861A (en) 1998-11-16 2000-05-30 Tdk Corp Oxide thin film
JP3276930B2 (en) 1998-11-17 2002-04-22 科学技術振興事業団 Transistor and semiconductor device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001077443A (en) * 1999-09-07 2001-03-23 Hitachi Ltd Multilayer film forming apparatus, method of manufacturing magnetoresistive sensor using the same, and magnetoresistive sensor
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
KR20020038482A (en) 2000-11-15 2002-05-23 모리시타 요이찌 Thin film transistor array, method for producing the same, and display panel using the same
JP3997731B2 (en) 2001-03-19 2007-10-24 富士ゼロックス株式会社 Method for forming a crystalline semiconductor thin film on a substrate
JP2002289859A (en) 2001-03-23 2002-10-04 Minolta Co Ltd Thin film transistor
JP4090716B2 (en) 2001-09-10 2008-05-28 雅司 川崎 Thin film transistor and matrix display device
JP3925839B2 (en) 2001-09-10 2007-06-06 シャープ株式会社 Semiconductor memory device and test method thereof
WO2003040441A1 (en) 2001-11-05 2003-05-15 Japan Science And Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (en) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 Transparent thin film field effect transistor using homologous thin film as active layer
JP4083486B2 (en) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 Method for producing LnCuO (S, Se, Te) single crystal thin film
CN1445821A (en) 2002-03-15 2003-10-01 三洋电机株式会社 Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
JP3933591B2 (en) 2002-03-26 2007-06-20 淳二 城戸 Organic electroluminescent device
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (en) 2002-06-13 2004-01-22 Murata Mfg Co Ltd Semiconductor device and method of manufacturing the semiconductor device
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004266263A (en) * 2003-02-12 2004-09-24 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device
JP4166105B2 (en) 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
JP2004273732A (en) 2003-03-07 2004-09-30 Sharp Corp Active matrix substrate and manufacturing method thereof
JP4108633B2 (en) 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
CN102867855B (en) 2004-03-12 2015-07-15 独立行政法人科学技术振兴机构 Amorphous oxide and thin film transistor
US7105889B2 (en) 2004-06-04 2006-09-12 International Business Machines Corporation Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (en) 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin film transistor and manufacturing method thereof
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
CN101057333B (en) 2004-11-10 2011-11-16 佳能株式会社 Light emitting device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
RU2358355C2 (en) 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Field transistor
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP5126729B2 (en) 2004-11-10 2013-01-23 キヤノン株式会社 Image display device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (en) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (en) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (en) 2005-06-10 2006-12-21 Casio Comput Co Ltd Thin film transistor
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (en) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 OLED display and manufacturing method thereof
JP2007059128A (en) 2005-08-23 2007-03-08 Canon Inc Organic EL display device and manufacturing method thereof
JP2007073705A (en) 2005-09-06 2007-03-22 Canon Inc Oxide semiconductor channel thin film transistor and method for manufacturing the same
JP4850457B2 (en) 2005-09-06 2012-01-11 キヤノン株式会社 Thin film transistor and thin film diode
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
JP5116225B2 (en) 2005-09-06 2013-01-09 キヤノン株式会社 Manufacturing method of oxide semiconductor device
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (en) 2005-10-20 2012-10-03 キヤノン株式会社 Field effect transistor using amorphous oxide, and display device using the transistor
KR20090130089A (en) 2005-11-15 2009-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Diodes and Active Matrix Displays
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (en) 2006-01-21 2012-07-18 三星電子株式会社 ZnO film and method of manufacturing TFT using the same
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (en) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (en) 2006-06-13 2012-09-19 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4609797B2 (en) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 Thin film device and manufacturing method thereof
JP4999400B2 (en) 2006-08-09 2012-08-15 キヤノン株式会社 Oxide semiconductor film dry etching method
JP4332545B2 (en) 2006-09-15 2009-09-16 キヤノン株式会社 Field effect transistor and manufacturing method thereof
JP4274219B2 (en) 2006-09-27 2009-06-03 セイコーエプソン株式会社 Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices
JP5164357B2 (en) 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (en) 2006-12-04 2008-06-19 Toppan Printing Co Ltd Color EL display and manufacturing method thereof
KR101303578B1 (en) 2007-01-05 2013-09-09 삼성전자주식회사 Etching method of thin film
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (en) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light emitting display device using same
US8158974B2 (en) * 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (en) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 Thin film transistor substrate and manufacturing method thereof
KR20080094300A (en) 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistors and methods of manufacturing the same and flat panel displays comprising thin film transistors
KR101334181B1 (en) 2007-04-20 2013-11-28 삼성전자주식회사 Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (en) 2007-05-29 2013-12-24 삼성전자주식회사 Fabrication method of ZnO family Thin film transistor
JP5242083B2 (en) 2007-06-13 2013-07-24 出光興産株式会社 Crystalline oxide semiconductor and thin film transistor using the same
JP5393058B2 (en) 2007-09-05 2014-01-22 キヤノン株式会社 Field effect transistor
JP2009085944A (en) 2007-09-11 2009-04-23 Yamaha Motor Co Ltd Gas sensor, air-fuel ratio control device, and transportation equipment
JP4759598B2 (en) * 2007-09-28 2011-08-31 キヤノン株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE USING THE SAME
WO2009075281A1 (en) * 2007-12-13 2009-06-18 Idemitsu Kosan Co., Ltd. Field effect transistor using oxide semiconductor and method for manufacturing the same
JP5215158B2 (en) 2007-12-17 2013-06-19 富士フイルム株式会社 Inorganic crystalline alignment film, method for manufacturing the same, and semiconductor device
JP4623179B2 (en) 2008-09-18 2011-02-02 ソニー株式会社 Thin film transistor and manufacturing method thereof
KR101911386B1 (en) 2008-09-19 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP5451280B2 (en) 2008-10-09 2014-03-26 キヤノン株式会社 Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device
WO2010047077A1 (en) * 2008-10-23 2010-04-29 出光興産株式会社 Thin film transistor and method for manufacturing same
WO2010047063A1 (en) * 2008-10-23 2010-04-29 出光興産株式会社 Thin film transistor having high-purity crystalline indium oxide semiconductor film, and method for manufacturing the thin film transistor
JP5534229B2 (en) * 2008-11-28 2014-06-25 日産化学工業株式会社 Gate insulating film forming composition for thin film transistor
TWI508304B (en) 2008-11-28 2015-11-11 半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
JP5538797B2 (en) * 2008-12-12 2014-07-02 キヤノン株式会社 Field effect transistor and display device
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101648927B1 (en) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI476917B (en) 2009-04-16 2015-03-11 半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
KR101903930B1 (en) * 2009-06-30 2018-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5663214B2 (en) 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101782176B1 (en) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101342343B1 (en) * 2009-09-24 2013-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element
CN102482156A (en) * 2009-09-30 2012-05-30 出光兴产株式会社 In-Ga-Zn-O series oxide sintered body
KR20120084751A (en) * 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101877149B1 (en) * 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor layer, semiconductor device and manufacturing method thereof
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5237917B2 (en) * 2009-10-30 2013-07-17 スタンレー電気株式会社 Method for producing ZnO-based compound semiconductor
WO2011058882A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
KR101824124B1 (en) * 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102667809B1 (en) * 2009-11-28 2024-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070887A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
KR101117727B1 (en) * 2009-12-16 2012-03-07 삼성모바일디스플레이주식회사 Organic light emitting display and manufacturing method thereof
JP5743407B2 (en) * 2010-01-15 2015-07-01 キヤノン株式会社 Transistor driving method and display device including transistor driven by the method
KR102172360B1 (en) 2010-02-05 2020-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
JP2011169757A (en) 2010-02-18 2011-09-01 Taiyo Yuden Co Ltd Resistive oxygen sensor element
JP2011205017A (en) 2010-03-26 2011-10-13 Dainippon Printing Co Ltd Thin-film transistor, thin-film integrated circuit devices, and manufacturing methods therefor
JP2012124446A (en) * 2010-04-07 2012-06-28 Kobe Steel Ltd Oxide for semiconductor layer of thin film transistor and sputtering target, and thin film transistor
JP5718072B2 (en) * 2010-07-30 2015-05-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． Thin film transistor oxide for semiconductor layer and sputtering target, and thin film transistor
JP5723262B2 (en) * 2010-12-02 2015-05-27 株式会社神戸製鋼所 Thin film transistor and sputtering target
SG11201505099TA (en) * 2011-09-29 2015-08-28 Semiconductor Energy Lab Semiconductor device
DE112012004061B4 (en) * 2011-09-29 2024-06-20 Semiconductor Energy Laboratory Co., Ltd. semiconductor device
DE112012004307B4 (en) * 2011-10-14 2017-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130040706A (en) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
KR20130043063A (en) * 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130046357A (en) * 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6082562B2 (en) * 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
US9929276B2 (en) * 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220597B2 (en) * 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
CN108305895B (en) * 2012-08-10 2021-08-03 株式会社半导体能源研究所 Semiconductor device and method of manufacturing the same
KR102099261B1 (en) * 2012-08-10 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9245958B2 (en) * 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102171650B1 (en) * 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2014046222A1 (en) * 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device

Also Published As

Publication number Publication date
TWI587525B (en) 2017-06-11
JP2013219368A (en) 2013-10-24
JP2013084946A (en) 2013-05-09
TW201727924A (en) 2017-08-01
JP5395973B2 (en) 2014-01-22
JP2014053629A (en) 2014-03-20
JP2017157839A (en) 2017-09-07
KR20140056392A (en) 2014-05-09
JP6975838B2 (en) 2021-12-01
JP6374562B2 (en) 2018-08-15
CN105514174B (en) 2019-03-08
US9219160B2 (en) 2015-12-22
JP2025111651A (en) 2025-07-30
JP6619482B2 (en) 2019-12-11
WO2013047631A1 (en) 2013-04-04
TW201635556A (en) 2016-10-01
CN105514174A (en) 2016-04-20
KR20140015624A (en) 2014-02-06
TWI626751B (en) 2018-06-11
CN105702741A (en) 2016-06-22
TWI550876B (en) 2016-09-21
US20160056299A1 (en) 2016-02-25
JP2018174348A (en) 2018-11-08
CN103843146B (en) 2016-03-16
JP2023155305A (en) 2023-10-20
DE112012004076T5 (en) 2014-07-03
JP2020038990A (en) 2020-03-12
JP2021071730A (en) 2021-05-06
TW201316518A (en) 2013-04-16
KR101424799B1 (en) 2014-08-01
CN103843146A (en) 2014-06-04
JP6125398B2 (en) 2017-05-10
JP2022024000A (en) 2022-02-08
US20130082263A1 (en) 2013-04-04
WO2013047631A9 (en) 2014-01-03
JP5279940B2 (en) 2013-09-04
CN105702741B (en) 2019-01-01
JP6818114B2 (en) 2021-01-20
DE112012007294B3 (en) 2019-05-29

Similar Documents

Publication Publication Date Title
TWI562156B (en) Semiconductor device
TWI560842B (en) Semiconductor device
SG11201504823YA (en) Semiconductor device
SG10201510100UA (en) Semiconductor device
SG11201505099TA (en) Semiconductor device
SG11201505088UA (en) Semiconductor device
TWI562361B (en) Semiconductor device
TWI562360B (en) Semiconductor device
PH12014500451A1 (en) Semiconductor device
GB2508746B (en) Microelectronic device
SG10201610711UA (en) Semiconductor device
SG10201605470SA (en) Semiconductor device
TWI562143B (en) Semiconductor device
GB201506501D0 (en) Semiconductor device
SG10201500353WA (en) Semiconductor device
SG11201504615UA (en) Semiconductor device
GB201122288D0 (en) Semiconductor device controllers
IL228337A (en) Dual-pore device
GB201121367D0 (en) Device
TWI560880B (en) Semiconductor device
EP3920237C0 (en) Semiconductor device
SG10201504486PA (en) Semiconductor device with biased feature
GB201106823D0 (en) Device
EP2575134B8 (en) Semiconductor device
SG11201402006SA (en) Member for semiconductor manufacturing device