SG11201505064YA - Substrate processing apparatus - Google Patents
Substrate processing apparatusInfo
- Publication number
- SG11201505064YA SG11201505064YA SG11201505064YA SG11201505064YA SG11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- substrate processing
- substrate
- processing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012282467 | 2012-12-26 | ||
| PCT/JP2013/006997 WO2014103168A1 (en) | 2012-12-26 | 2013-11-28 | Substrate processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201505064YA true SG11201505064YA (en) | 2015-08-28 |
Family
ID=51020296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201505064YA SG11201505064YA (en) | 2012-12-26 | 2013-11-28 | Substrate processing apparatus |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9779921B2 (en) |
| JP (1) | JP5941161B2 (en) |
| KR (2) | KR101953432B1 (en) |
| CN (1) | CN104884667B (en) |
| DE (1) | DE112013006223B4 (en) |
| SG (1) | SG11201505064YA (en) |
| TW (1) | TW201437400A (en) |
| WO (1) | WO2014103168A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6035002B1 (en) * | 2015-08-20 | 2016-11-30 | 株式会社アルバック | Sputtering apparatus and state determination method thereof |
| KR20170102368A (en) * | 2015-08-20 | 2017-09-08 | 가부시키가이샤 알박 | Sputtering apparatus and method for determining the state thereof |
| US10640865B2 (en) | 2016-09-09 | 2020-05-05 | Samsung Electronics Co., Ltd. | Substrate processing apparatus and method for manufacturing semiconductor device using the same |
| JP6832130B2 (en) | 2016-11-04 | 2021-02-24 | 東京エレクトロン株式会社 | Film deposition equipment |
| JP6741564B2 (en) * | 2016-12-06 | 2020-08-19 | 東京エレクトロン株式会社 | Film deposition equipment |
| JP7246148B2 (en) * | 2018-06-26 | 2023-03-27 | 東京エレクトロン株式会社 | sputtering equipment |
| JP7225599B2 (en) * | 2018-08-10 | 2023-02-21 | 東京エレクトロン株式会社 | Deposition equipment |
| JP7057442B2 (en) * | 2018-11-16 | 2022-04-19 | 株式会社アルバック | Vacuum processing equipment |
| CN113169024B (en) * | 2018-12-19 | 2025-03-11 | 瑞士艾发科技 | Vacuum system and method for depositing compound layers |
| WO2021091890A1 (en) * | 2019-11-08 | 2021-05-14 | Kurt J. Lesker Company | Compound motion vacuum environment deposition source shutter mechanism |
| TW202129045A (en) * | 2019-12-05 | 2021-08-01 | 美商應用材料股份有限公司 | Multicathode deposition system and methods |
| CN111508803B (en) * | 2020-04-23 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber, wafer edge protection method and semiconductor equipment |
| CN115461489A (en) * | 2020-04-30 | 2022-12-09 | 东京毅力科创株式会社 | PVD device |
| CN113838793A (en) * | 2020-06-24 | 2021-12-24 | 拓荆科技股份有限公司 | Device and equipment for automatically rotating wafer |
| JP7547228B2 (en) * | 2021-01-22 | 2024-09-09 | 大陽日酸株式会社 | Vapor phase growth apparatus and method for controlling pressure change suppression device in said vapor phase growth apparatus |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5108569A (en) * | 1989-11-30 | 1992-04-28 | Applied Materials, Inc. | Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering |
| US5518593A (en) * | 1994-04-29 | 1996-05-21 | Applied Komatsu Technology, Inc. | Shield configuration for vacuum chamber |
| JP3723712B2 (en) * | 2000-02-10 | 2005-12-07 | 株式会社日立国際電気 | Substrate processing apparatus and substrate processing method |
| JP4406188B2 (en) * | 2002-06-12 | 2010-01-27 | キヤノンアネルバ株式会社 | Deposition equipment |
| US8221602B2 (en) * | 2006-12-19 | 2012-07-17 | Applied Materials, Inc. | Non-contact process kit |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| JP2010084169A (en) * | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | Evacuation method, evacuation program, and vacuum treatment apparatus |
| KR101067104B1 (en) * | 2008-11-28 | 2011-09-22 | 캐논 아네르바 가부시키가이샤 | Film deposition apparatus, manufacturing method of electronic device |
| JP2011132580A (en) * | 2009-12-25 | 2011-07-07 | Canon Anelva Corp | Film-forming apparatus and film-forming method |
| JP5611803B2 (en) | 2010-12-21 | 2014-10-22 | キヤノンアネルバ株式会社 | Reactive sputtering equipment |
| JP5860063B2 (en) | 2011-12-22 | 2016-02-16 | キヤノンアネルバ株式会社 | Substrate processing equipment |
| JP5914035B2 (en) * | 2012-02-23 | 2016-05-11 | Hoya株式会社 | Mask blank manufacturing method and transfer mask manufacturing method |
-
2013
- 2013-11-28 SG SG11201505064YA patent/SG11201505064YA/en unknown
- 2013-11-28 WO PCT/JP2013/006997 patent/WO2014103168A1/en not_active Ceased
- 2013-11-28 CN CN201380068235.8A patent/CN104884667B/en active Active
- 2013-11-28 KR KR1020157019966A patent/KR101953432B1/en active Active
- 2013-11-28 JP JP2014554092A patent/JP5941161B2/en active Active
- 2013-11-28 KR KR1020177018315A patent/KR101973879B1/en active Active
- 2013-11-28 DE DE112013006223.2T patent/DE112013006223B4/en active Active
- 2013-12-20 TW TW102147525A patent/TW201437400A/en unknown
-
2015
- 2015-06-25 US US14/750,717 patent/US9779921B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2014103168A1 (en) | 2017-01-12 |
| TWI561658B (en) | 2016-12-11 |
| US9779921B2 (en) | 2017-10-03 |
| KR20150099841A (en) | 2015-09-01 |
| CN104884667B (en) | 2017-03-22 |
| TW201437400A (en) | 2014-10-01 |
| DE112013006223B4 (en) | 2022-07-14 |
| US20150294845A1 (en) | 2015-10-15 |
| WO2014103168A1 (en) | 2014-07-03 |
| CN104884667A (en) | 2015-09-02 |
| KR101973879B1 (en) | 2019-04-29 |
| KR101953432B1 (en) | 2019-02-28 |
| DE112013006223T5 (en) | 2015-09-24 |
| JP5941161B2 (en) | 2016-06-29 |
| KR20170082647A (en) | 2017-07-14 |
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