[go: up one dir, main page]

SG11201505064YA - Substrate processing apparatus - Google Patents

Substrate processing apparatus

Info

Publication number
SG11201505064YA
SG11201505064YA SG11201505064YA SG11201505064YA SG11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA SG 11201505064Y A SG11201505064Y A SG 11201505064YA
Authority
SG
Singapore
Prior art keywords
processing apparatus
substrate processing
substrate
processing
Prior art date
Application number
SG11201505064YA
Inventor
Yoshimitsu Shimane
Satoshi Uchino
Susumu Akiyama
Kazuaki Matsuo
Nobuo Yamaguchi
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of SG11201505064YA publication Critical patent/SG11201505064YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3492Variation of parameters during sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3441Dark space shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464Operating strategies
    • H01J37/347Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG11201505064YA 2012-12-26 2013-11-28 Substrate processing apparatus SG11201505064YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012282467 2012-12-26
PCT/JP2013/006997 WO2014103168A1 (en) 2012-12-26 2013-11-28 Substrate processing apparatus

Publications (1)

Publication Number Publication Date
SG11201505064YA true SG11201505064YA (en) 2015-08-28

Family

ID=51020296

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201505064YA SG11201505064YA (en) 2012-12-26 2013-11-28 Substrate processing apparatus

Country Status (8)

Country Link
US (1) US9779921B2 (en)
JP (1) JP5941161B2 (en)
KR (2) KR101953432B1 (en)
CN (1) CN104884667B (en)
DE (1) DE112013006223B4 (en)
SG (1) SG11201505064YA (en)
TW (1) TW201437400A (en)
WO (1) WO2014103168A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6035002B1 (en) * 2015-08-20 2016-11-30 株式会社アルバック Sputtering apparatus and state determination method thereof
KR20170102368A (en) * 2015-08-20 2017-09-08 가부시키가이샤 알박 Sputtering apparatus and method for determining the state thereof
US10640865B2 (en) 2016-09-09 2020-05-05 Samsung Electronics Co., Ltd. Substrate processing apparatus and method for manufacturing semiconductor device using the same
JP6832130B2 (en) 2016-11-04 2021-02-24 東京エレクトロン株式会社 Film deposition equipment
JP6741564B2 (en) * 2016-12-06 2020-08-19 東京エレクトロン株式会社 Film deposition equipment
JP7246148B2 (en) * 2018-06-26 2023-03-27 東京エレクトロン株式会社 sputtering equipment
JP7225599B2 (en) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 Deposition equipment
JP7057442B2 (en) * 2018-11-16 2022-04-19 株式会社アルバック Vacuum processing equipment
CN113169024B (en) * 2018-12-19 2025-03-11 瑞士艾发科技 Vacuum system and method for depositing compound layers
WO2021091890A1 (en) * 2019-11-08 2021-05-14 Kurt J. Lesker Company Compound motion vacuum environment deposition source shutter mechanism
TW202129045A (en) * 2019-12-05 2021-08-01 美商應用材料股份有限公司 Multicathode deposition system and methods
CN111508803B (en) * 2020-04-23 2023-01-17 北京北方华创微电子装备有限公司 Semiconductor process chamber, wafer edge protection method and semiconductor equipment
CN115461489A (en) * 2020-04-30 2022-12-09 东京毅力科创株式会社 PVD device
CN113838793A (en) * 2020-06-24 2021-12-24 拓荆科技股份有限公司 Device and equipment for automatically rotating wafer
JP7547228B2 (en) * 2021-01-22 2024-09-09 大陽日酸株式会社 Vapor phase growth apparatus and method for controlling pressure change suppression device in said vapor phase growth apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
JP3723712B2 (en) * 2000-02-10 2005-12-07 株式会社日立国際電気 Substrate processing apparatus and substrate processing method
JP4406188B2 (en) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 Deposition equipment
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
JP2010084169A (en) * 2008-09-30 2010-04-15 Canon Anelva Corp Evacuation method, evacuation program, and vacuum treatment apparatus
KR101067104B1 (en) * 2008-11-28 2011-09-22 캐논 아네르바 가부시키가이샤 Film deposition apparatus, manufacturing method of electronic device
JP2011132580A (en) * 2009-12-25 2011-07-07 Canon Anelva Corp Film-forming apparatus and film-forming method
JP5611803B2 (en) 2010-12-21 2014-10-22 キヤノンアネルバ株式会社 Reactive sputtering equipment
JP5860063B2 (en) 2011-12-22 2016-02-16 キヤノンアネルバ株式会社 Substrate processing equipment
JP5914035B2 (en) * 2012-02-23 2016-05-11 Hoya株式会社 Mask blank manufacturing method and transfer mask manufacturing method

Also Published As

Publication number Publication date
JPWO2014103168A1 (en) 2017-01-12
TWI561658B (en) 2016-12-11
US9779921B2 (en) 2017-10-03
KR20150099841A (en) 2015-09-01
CN104884667B (en) 2017-03-22
TW201437400A (en) 2014-10-01
DE112013006223B4 (en) 2022-07-14
US20150294845A1 (en) 2015-10-15
WO2014103168A1 (en) 2014-07-03
CN104884667A (en) 2015-09-02
KR101973879B1 (en) 2019-04-29
KR101953432B1 (en) 2019-02-28
DE112013006223T5 (en) 2015-09-24
JP5941161B2 (en) 2016-06-29
KR20170082647A (en) 2017-07-14

Similar Documents

Publication Publication Date Title
TWI561317B (en) Substrate cleaning apparatus and substrate processing apparatus
SG11201503660VA (en) Substrate supporting apparatus
SG11201505064YA (en) Substrate processing apparatus
EP2787497A4 (en) Failure-assessment apparatus
EP2819069A4 (en) Electronic apparatus
KR102002042B9 (en) Substrate processing apparatus and substrate processing method
PL2574421T3 (en) Processing device
GB201218666D0 (en) Apparatus
TWI560310B (en) Apparatus for processing substrate
EP2850385A4 (en) Substrate inspection
PL2825704T3 (en) Path-clearing apparatus
GB201218575D0 (en) Nephroureterectomy apparatus
TWI560797B (en) Substrate processing apparatus
GB201220673D0 (en) Apparatus
TWI562685B (en) Plasma processing device
GB201300914D0 (en) Apparatus
HUE055426T2 (en) Substrate treatment system
PL2773803T3 (en) Laundry processing apparatus
GB201223151D0 (en) Computer apparatus
KR101936257B9 (en) Substrate processing apparatus
GB201311406D0 (en) Club-swing practice apparatus
EP2687690A4 (en) Particulate-matter processing device
TWI560766B (en) Substrate processing method
GB201215796D0 (en) Apparatus
EP2863367A4 (en) Banknote processing apparatus