CN113838793A - Apparatus and equipment for automatic wafer rotation - Google Patents
Apparatus and equipment for automatic wafer rotation Download PDFInfo
- Publication number
- CN113838793A CN113838793A CN202010589146.XA CN202010589146A CN113838793A CN 113838793 A CN113838793 A CN 113838793A CN 202010589146 A CN202010589146 A CN 202010589146A CN 113838793 A CN113838793 A CN 113838793A
- Authority
- CN
- China
- Prior art keywords
- wafer
- chamber
- processing apparatus
- rotation
- support frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000011553 magnetic fluid Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 230000009977 dual effect Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 96
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Centrifugal Separators (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本揭露涉及用于晶圆自动旋转的装置及设备。在本揭露的一实施例中，一种晶圆旋转装置包含：晶圆支撑架，其经配置以沿晶圆的外周界承托并固持所述晶圆；以及旋转单元，其经配置以承托并固持所述晶圆支撑架，所述旋转单元与所述晶圆支撑架在加工期间保持相对位置固定。
The present disclosure relates to apparatus and apparatus for automatic wafer rotation. In one embodiment of the present disclosure, a wafer rotation apparatus includes: a wafer support frame configured to support and hold the wafer along an outer perimeter of the wafer; and a rotation unit configured to support the wafer The wafer support frame is supported and held, and the rotation unit and the wafer support frame are kept in a fixed relative position during processing.
Description
Technical Field
The present disclosure relates generally to the field of semiconductor wafer processing, and more particularly to semiconductor wafer thin film deposition and vacuum fabrication techniques.
Background
Semiconductor processing may include deposition processes, such as Chemical Vapor Deposition (CVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), for forming various thin films on wafers or substrates to fabricate semiconductor devices, such as integrated circuits and semiconductor light emitting devices. The wafer is typically heated using a heating plate to facilitate the deposition process.
One important factor determining the performance of semiconductor devices is the uniformity of the films deposited on the wafer. For example, uniformly depositing the film can minimize thickness variations across the wafer surface. However, film uniformity can be affected by several adverse factors including, for example, heater temperature, chamber geometry, process gas flow non-uniformity, and plasma non-uniformity. Both of these factors can lead to non-uniform film deposition on the wafer surface, thereby degrading device performance. In particular, during the deposition process, the uniformity of the thin film deposition on the wafer can be seriously affected by the non-uniform heating of the wafer.
To this end, techniques have been developed to rotate the wafer over the heating plate during deposition to achieve uniform heating, thereby improving film uniformity. However, the conventional intra-cavity wafer rotating mechanism is generally complex in structural components and involves more parts in the moving process, so that excessive particles are easily generated in the sealed cavity in the moving process, and the particles can seriously affect the film quality of the wafer.
Therefore, there is a need to develop an apparatus and an apparatus for automatically rotating a wafer to solve the above problems.
Disclosure of Invention
The application aims to provide a device and equipment for automatic rotation of a wafer, so that undesirable particles are effectively reduced on the premise of ensuring uniform heating of the wafer.
An embodiment of the present application provides a wafer rotating apparatus, which includes: a wafer support configured to hold and hold a wafer along an outer perimeter of the wafer; and a rotation unit configured to hold and retain the wafer support frame, the rotation unit and the wafer support frame remaining fixed in relative position during processing.
Yet another embodiment of the present application provides a wafer processing apparatus, comprising: a chamber; a heating plate located within the chamber and extending below an exterior of the chamber via a linkage; a rotation unit within the chamber, the rotation unit surrounding the heating plate and connected to a rotation unit support frame and extending below an exterior of the chamber, a top of the rotation unit holding and holding a wafer via a wafer support frame; and a double sleeve magnetic fluid fixedly connected to the rotary unit support frame below the exterior of the chamber and coupled to a motor via a power transfer element.
It should be understood that the broad forms of the present disclosure and their respective features may be used in combination, interchangeably and/or independently and are not intended to limit reference to the broad forms alone.
Drawings
FIG. 1 shows a cross-sectional view of a wafer spin robot in accordance with one embodiment of the present disclosure.
FIG. 2A shows a top view of a wafer support stand according to an embodiment of the present disclosure.
Fig. 2B is a partially enlarged view of a bump-containing protrusion of the wafer support frame according to the embodiment shown in fig. 2A.
Fig. 2C is an enlarged view of a portion of the wafer support frame shown in fig. 2A without bumps.
Detailed Description
In order to better understand the spirit of the present disclosure, some preferred embodiments of the present disclosure are further described below.
In this specification, unless specified or limited otherwise, relative terms such as: terms of "central," "longitudinal," "lateral," "front," "rear," "right," "left," "inner," "outer," "lower," "upper," "horizontal," "vertical," "above," "below," "top," "bottom," and derivatives thereof (e.g., "horizontally," "downwardly," "upwardly," etc.) should be construed to refer to the orientation as then described in the discussion or as shown in the drawing. These relative terms are for convenience of description only and do not require that the present application be constructed or operated in a particular orientation.
Various embodiments of the present disclosure are discussed in detail below. While specific implementations are discussed, it should be understood that these implementations are for illustrative purposes only. A person skilled in the relevant art will recognize that other components and configurations may be used without parting from the spirit and scope of the disclosure.
FIG. 1 shows a cross-sectional view of a wafer spin robot in accordance with one embodiment of the present disclosure. The wafer automatic rotation apparatus 100 may include a heating plate 101, a link 101', a chamber 103, a wafer support 104, a rotation unit 105, a double casing magnetic fluid 106, a rotation unit support 107, a power transmission element 108, and a motor 110.
As shown in fig. 1, heating plate 101 is located inside chamber 103. According to some embodiments of the present disclosure, the chamber 103 may be a vacuum chamber. The heater plate 101 may be connected to a linkage 101' (or referred to as a heater plate linkage) and extend below the exterior of the chamber 103. As an example, the connecting rod 101' may extend through a lower opening of the chamber 103 to below the exterior of the chamber 103. A heating circuit (not shown) may be further provided in the link 101' and connected to the heating plate 101 to adjust or control the temperature of the heating plate 101. As an example, the chamber 103 may further comprise a chamber lid.
The rotating unit 105 surrounds the heating plate 101. The rotary unit 105 is disposed inside the chamber 103, is connected to the rotary unit support frame 107, and extends to below the outside of the chamber 103. As an example, the rotating unit support frame 107 may extend through the same lower opening of the chamber 103 to below the exterior of the chamber 103. In one embodiment, the heating disk 101 may be substantially disk-shaped, the rotary unit 105 may be substantially ring-shaped, and the diameter of the rotary unit 105 is larger than the diameter of the heating disk 101, as viewed from above or from the top of the wafer automatic rotation apparatus 100. Accordingly, the diameter of the rotation unit support frame 107 connected to the rotation unit 105 is larger than the diameter of the link 101' connected to the heating pan 101, so that the rotation unit support frame 107 is disposed around the link 101' and separated from the link 101 '. The connection of the rotary unit 105 to the rotary unit support bracket 107 is a fixed connection (e.g., engagement) such that there is no relative displacement of both the rotary unit 105 and the rotary unit support bracket 107 during processing.
The wafer support 104 may be mounted on top of the rotary unit 105 so as to be fixedly connected (e.g., engaged) with the rotary unit 105 such that the rotary unit 105 and the wafer support 104 remain fixed in relative position during processing. The wafer support 104 may be configured to hold and hold the wafer 102. When held and held by the wafer support 104, the wafer 102 is positioned above the heating plate 101 and is substantially parallel to the upper surface of the heating plate 101. In one embodiment, a robot (not shown) may be used to transfer the wafer 102 into the chamber 103 through a sidewall opening of the chamber 103 and place the wafer 102 on a wafer support 104 so that the wafer 102 to be processed is subjected to a semiconductor wafer processing process such as, but not limited to, wafer film deposition in the chamber 103. It should be appreciated that after the deposition process is complete, the robot arm may pick up the processed wafer 102 through the sidewall opening of the chamber 103 into the chamber 103 and remove the processed wafer 102 from the chamber 103 through the sidewall opening.
Still referring to fig. 1, the chamber 103 includes a double-sleeve magnetic fluid 106 disposed below the exterior thereof, the double-sleeve magnetic fluid 106 being fixedly connected (e.g., engaged) to the rotary unit support 107 and enabling the chamber 103 to reach a high vacuum state. Since the rotary unit 105 is fixedly connected to the wafer support 104 and the rotary unit support 107 is fixedly connected to the rotary unit 105, when the double-casing magnetic fluid 106 is fixedly connected to the rotary unit support 107, the double-casing magnetic fluid 106 is also indirectly fixedly connected to the rotary unit 105 and the wafer support 104. In one embodiment, the rotating unit support 107, the rotating unit 105, the wafer support 104, and the wafer 102 may be rotated or rotated by rotating or rotating the double sleeve magnetic fluid 106 during wafer processing. In another embodiment, the wafer support 104 may further include a bump that mates with an underlying Notch (Notch) of the wafer 102, and when the bump is engaged or mated with the Notch, the wafer support 104 may more securely hold and retain the wafer 102 during processing, thereby preventing movement of the wafer 102 during rotation.
As an embodiment, the double-sleeve magnetic fluid 106 may include an inner ring disposed between the connecting rod 101' and the rotating unit supporting frame 107, and an outer ring disposed outside the rotating unit supporting frame 107 and capable of rotating synchronously with the inner ring. In one embodiment, double sleeve magnetic fluid 106 is coupled to electric machine 110 via power transfer element 108. Power transfer element 108 may be located at the lower end of double-sleeve magnetic fluid 106 and may comprise a gear, a synchronous pulley, or any device or structure suitable for transferring power. In one embodiment, the motor 110 may further include a speed reducer 109 and is coupled to the power transmission element 108 via the speed reducer 109. In another embodiment, the wafer automatic rotation apparatus 100 may further comprise a connection brake 111 to brake the double sleeve magnetic fluid 106.
FIG. 2A shows a top view of a wafer support stand according to an embodiment of the present disclosure. Wafer support 200 may be used, for example, as wafer support 104 shown in fig. 1. The wafer support 200 may include a ring-shaped body 201 and protrusions 202, 203, 204, as viewed from above or from the top of the wafer robot, wherein the protrusions 202, 203, 204 extend from above the ring-shaped body 201 toward the center of the ring-shaped body 201 (also referred to as extending centripetally) to hold and retain the wafer 205 during processing (the wafer 205 is shown in phantom and may be removed from the wafer support 200). In an embodiment, one or more of the protrusions 202, 203, 204 may include one or more bumps or bump structures, as described in detail below. However, it should be understood that the number of protrusions is not limited to three as shown in fig. 2A (i.e., protrusions 202, 203, 204), but may be any number as long as the protrusions are sufficient to hold and retain the wafer 205. As an example, the protrusion of the wafer support 200 may comprise a ring or quasi-ring structure concentric with the ring body 201, and in this case, the ring or quasi-ring protrusion may be regarded as a single protrusion.
Fig. 2B shows a partially enlarged view of a bump-containing protrusion of the wafer support 200 according to the embodiment shown in fig. 2A. For example, but not limited to, the protrusion 202 on the ring-shaped body 201 of the wafer support 200 includes a bump 210, and the bump 210 is located at the end of the protrusion 202 contacting the wafer and can be inserted into or caught in a notch below the wafer 205, thereby preventing the wafer 205 from moving during rotation. Since the wafer bottom typically includes at least one recess that is often unused during wafer processing, the embodiment shown in fig. 2B can effectively utilize the unused recess by adding only bumps 210 that match the recess to prevent the wafer from moving during rotation without significantly increasing the cost of modification.
As an example, the bumps 210 may be used to assist in positioning the wafer during the initial stages of processing. For example, but not limited to, when transferring a wafer, the heating plate 101 shown in fig. 1 may be further lowered to a lower limit, and a robot arm of the transfer system may transfer the wafer 205 into the chamber 103 and place the wafer 205 on the wafer support 104 while positioning the wafer using the bumps 210 on the wafer support 104, and once the bumps 210 are embedded in the recesses under the wafer, the wafer positioning may be completed, thereby greatly simplifying the transfer logic and preventing the wafer 205 from moving due to high speed rotation during subsequent processing.
Fig. 2C is an enlarged view of a portion of the wafer support frame 200 without bumps according to the embodiment shown in fig. 2A. For example, but not limiting of, the protrusion 203 (or the protrusion 204 shown in fig. 2A) on the annular body 201 of the wafer support 200 may not include a bump or bump structure at its end. In one embodiment, the protrusion 203 shown in fig. 2C may further comprise a ramp 220, and the ramp 220 may ensure the centering of the wafer 205, thereby better preventing the wafer 205 from moving during the rotation motion. It should be understood that the ramp 220 shown in fig. 2C may also be applied to the end of the protrusion 202 shown in fig. 2B that contacts the wafer 205.
The apparatus and the device for wafer automatic rotation provided by the embodiments of the present disclosure have simple structure, can generate less particles during the wafer rotation process, and can be widely applied to the fields such as PECVD, Atomic Layer Deposition (ALD), and 3D vacuum equipment.
In addition, the apparatus and the device for automatically rotating the wafer provided by the embodiments of the present disclosure uniformly heat the wafer by rotating the wafer above the heating plate, which not only improves the film formation quality of the thin film, but also improves the deposition rate. In addition, the high-vacuum sealing at the bottom of the rotating unit is realized through the double-sleeve magnetic fluid, and the high-precision control is realized by driving the rotating unit to rotate through power transmission elements such as gears or synchronous belts.
The technical content and the technical features of the present disclosure have been described in the embodiments described above, which are merely examples for implementing the present disclosure. Those skilled in the art may now make numerous alterations and modifications based on the teachings and disclosure herein without departing from the spirit of the disclosure. Accordingly, the disclosed embodiments of the disclosure do not limit the scope of the disclosure. Rather, modifications and equivalent arrangements included within the spirit and scope of the claims are intended to be included within the scope of the present disclosure.
Claims (18)
1. A wafer rotation device, comprising:
a wafer support configured to hold and hold a wafer along an outer perimeter of the wafer; and
a rotary unit configured to hold and retain the wafer support, the rotary unit and the wafer support being held stationary relative to each other during processing.
2. The wafer rotation apparatus of claim 1, the wafer support frame comprising an annular body and a protrusion extending centripetally from above the annular body to hold and retain the wafer.
3. The wafer rotation apparatus of claim 2, wherein the protrusion comprises a bump that mates with an underlying recess of the wafer.
4. The wafer rotation device of claim 2 or 3, wherein the protrusion comprises a plurality of raised elements.
5. The wafer rotation device of claim 2 or 3, wherein the protrusion comprises an annular structure concentric with the annular body.
6. The wafer rotation device of claim 2 or 3, wherein the wafer support comprises a ceramic material.
7. The wafer rotation device of claim 2 or 3, wherein an inner edge of the protrusion includes a ramp.
8. A wafer processing apparatus, comprising:
a chamber;
a heating plate located within the chamber and extending below an exterior of the chamber via a linkage;
a rotation unit within the chamber, the rotation unit surrounding the heating plate and connected to a rotation unit support frame and extending below an exterior of the chamber, a top of the rotation unit holding and holding a wafer via a wafer support frame; and
a double sleeve magnetic fluid fixedly connected to the rotary unit support frame below the exterior of the chamber and coupled to a motor via a power transfer element.
9. The wafer processing apparatus of claim 8 wherein the power transfer element is located at a lower end of the double sleeve magnetic fluid.
10. The wafer processing apparatus of claim 8 or 9, wherein the power transmission element comprises a gear.
11. The wafer processing apparatus of claim 8 or 9, wherein the power transmission element comprises a synchronous pulley.
12. The wafer processing apparatus of claim 8, the dual sleeve magnetic fluid comprising an inner ring and an outer ring configured to rotate synchronously.
13. The wafer processing apparatus of claim 8, wherein the motor includes a speed reducer and is coupled with the power transfer element via the speed reducer.
14. The wafer processing apparatus of claim 8, further comprising a connection brake configured to brake the double sleeve fluid.
15. The wafer processing apparatus of claim 8, wherein the chamber comprises a vacuum chamber lid.
16. The wafer processing apparatus of claim 8, wherein the rotary unit and the wafer support frame remain fixed in relative position during processing.
17. The wafer processing apparatus of claim 16 wherein the wafer support shelf includes raised points that mate with underlying recesses of the wafer.
18. The wafer processing apparatus of claim 8, wherein the chamber is a vacuum chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010589146.XA CN113838793A (en) | 2020-06-24 | 2020-06-24 | Apparatus and equipment for automatic wafer rotation |
| TW110123224A TWI797651B (en) | 2020-06-24 | 2021-06-24 | Apparatus and equipment for automatic wafer rotation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010589146.XA CN113838793A (en) | 2020-06-24 | 2020-06-24 | Apparatus and equipment for automatic wafer rotation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113838793A true CN113838793A (en) | 2021-12-24 |
Family
ID=78964648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010589146.XA Pending CN113838793A (en) | 2020-06-24 | 2020-06-24 | Apparatus and equipment for automatic wafer rotation |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113838793A (en) |
| TW (1) | TWI797651B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118704086B (en) * | 2024-08-30 | 2024-11-05 | 凯德芯贝(沈阳)石英有限公司 | Quartz bracket for centripetal vapor phase epitaxy of semiconductor chip edge |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014109526A1 (en) * | 2013-01-08 | 2014-07-17 | (주)에스티아이 | Apparatus and method for continuous processing of semiconductor wafer |
| CN104903992A (en) * | 2013-01-08 | 2015-09-09 | 系统科技公司 | Method for continuous processing of semiconductor wafer |
| CN106133873A (en) * | 2014-03-12 | 2016-11-16 | 应用材料公司 | Wafer in semiconductor chamber rotates |
| CN210461470U (en) * | 2019-06-28 | 2020-05-05 | 东泰高科装备科技有限公司 | Rotary device |
| CN111139458A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Deposition device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4205294B2 (en) * | 2000-08-01 | 2009-01-07 | キヤノンアネルバ株式会社 | Substrate processing apparatus and method |
| US6913651B2 (en) * | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
| JP6184479B2 (en) * | 2012-05-18 | 2017-08-23 | ビーコ インストゥルメンツ インコーポレイテッド | A rotating disk reactor with a ferrofluidic seal for chemical vapor deposition |
| JP6250924B2 (en) * | 2012-10-02 | 2017-12-20 | 株式会社荏原製作所 | Substrate cleaning apparatus and polishing apparatus |
| WO2014103168A1 (en) * | 2012-12-26 | 2014-07-03 | キヤノンアネルバ株式会社 | Substrate processing apparatus |
-
2020
- 2020-06-24 CN CN202010589146.XA patent/CN113838793A/en active Pending
-
2021
- 2021-06-24 TW TW110123224A patent/TWI797651B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014109526A1 (en) * | 2013-01-08 | 2014-07-17 | (주)에스티아이 | Apparatus and method for continuous processing of semiconductor wafer |
| CN104903992A (en) * | 2013-01-08 | 2015-09-09 | 系统科技公司 | Method for continuous processing of semiconductor wafer |
| CN106133873A (en) * | 2014-03-12 | 2016-11-16 | 应用材料公司 | Wafer in semiconductor chamber rotates |
| CN210461470U (en) * | 2019-06-28 | 2020-05-05 | 东泰高科装备科技有限公司 | Rotary device |
| CN111139458A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202211362A (en) | 2022-03-16 |
| TWI797651B (en) | 2023-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101841201B1 (en) | Process chamber and semiconductor processing apparatus | |
| US10497581B2 (en) | Substrate processing device | |
| US11670535B2 (en) | Carrier plate for use in plasma processing systems | |
| TWI784600B (en) | Method and equipment for automatic lifting and rotating of wafer | |
| US8092603B2 (en) | Substrate processing apparatus | |
| TW201021155A (en) | Substrate holding member, substrate processing apparatus, and substrate processing method | |
| JP2003133233A (en) | Substrate processing equipment | |
| KR20200096985A (en) | Shutter disk assembly, semiconductor processing apparatus and method | |
| TWI654700B (en) | Substrate processing method | |
| WO2021173387A1 (en) | Systems and methods for depositing low-k dielectric films | |
| CN113838793A (en) | Apparatus and equipment for automatic wafer rotation | |
| TW201021103A (en) | Method for manufacturing a semiconductor device | |
| KR20010095006A (en) | Substrate processing apparatus and substrate processing method | |
| TWM620754U (en) | Wafer carrying and fixing device and thin film deposition equipment using the wafer carrying and fixing device | |
| JP2006066544A (en) | Film-depositing device and film-depositing method | |
| JP4042618B2 (en) | Epitaxial wafer manufacturing method | |
| JP5358201B2 (en) | Deposition method | |
| JP6191954B2 (en) | Substrate processing method and substrate processing apparatus | |
| JPS60249329A (en) | sputter etching equipment | |
| JP2003092238A (en) | Substrate processing equipment | |
| KR101436059B1 (en) | Apparatus and method for manufacturing semiconductor | |
| KR200454322Y1 (en) | Deposition gas supply device | |
| CN115725947A (en) | Substrate carrying and fixing mechanism and thin film deposition equipment | |
| JP6359377B2 (en) | Substrate processing equipment | |
| TW202312311A (en) | Wafer carrying and fixing mechanism and thin film deposition equipment using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |