SE466571B - Termisk detektoruppsaettning omfattande diskreta termiska detektorelement - Google Patents
Termisk detektoruppsaettning omfattande diskreta termiska detektorelementInfo
- Publication number
- SE466571B SE466571B SE8702531A SE8702531A SE466571B SE 466571 B SE466571 B SE 466571B SE 8702531 A SE8702531 A SE 8702531A SE 8702531 A SE8702531 A SE 8702531A SE 466571 B SE466571 B SE 466571B
- Authority
- SE
- Sweden
- Prior art keywords
- elements
- thermal
- substrate
- layer
- detector
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000006100 radiation absorber Substances 0.000 claims description 2
- 239000012858 resilient material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 44
- 239000010408 film Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 28
- 229920000642 polymer Polymers 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000005855 radiation Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 12
- 239000006096 absorbing agent Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000009413 insulation Methods 0.000 description 11
- 238000003491 array Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000011295 pitch Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910003480 inorganic solid Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000010987 cubic zirconia Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008098 formaldehyde solution Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- YLZGECKKLOSBPL-UHFFFAOYSA-N indium nickel Chemical compound [Ni].[In] YLZGECKKLOSBPL-UHFFFAOYSA-N 0.000 description 1
- 229910003471 inorganic composite material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
- H10F39/1575—CCD or CID infrared image sensors of the hybrid type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/206—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices on foils
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8522638A GB2200246B (en) | 1985-09-12 | 1985-09-12 | Thermal detector array |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8702531D0 SE8702531D0 (sv) | 1987-06-17 |
| SE8702531L SE8702531L (sv) | 1988-08-06 |
| SE466571B true SE466571B (sv) | 1992-03-02 |
Family
ID=10585093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8702531A SE466571B (sv) | 1985-09-12 | 1987-06-17 | Termisk detektoruppsaettning omfattande diskreta termiska detektorelement |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE102T1 (fr) |
| DE (1) | DE3644882A1 (fr) |
| FR (2) | FR2620531B1 (fr) |
| GB (1) | GB2200246B (fr) |
| IT (1) | IT1235675B (fr) |
| NL (1) | NL8615006A (fr) |
| SE (1) | SE466571B (fr) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8621688D0 (en) * | 1986-09-09 | 1986-10-15 | Graviner Ltd | Radiation detection arrangements |
| GB2206997A (en) * | 1987-07-10 | 1989-01-18 | Philips Electronic Associated | Arrays of pyroelectric or ferroelectric infrared detector elements |
| US5047644A (en) * | 1989-07-31 | 1991-09-10 | Texas Instruments Incorporated | Polyimide thermal isolation mesa for a thermal imaging system |
| US5306912A (en) * | 1989-10-21 | 1994-04-26 | Thorn Emi Plc | Optically addressed thermal imaging device |
| FR2670325B1 (fr) * | 1990-12-11 | 1993-01-22 | Thomson Composants Militaires | Detecteur infrarouge monolithique a materiau pyroelectrique. |
| US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
| JPH07500913A (ja) * | 1991-11-04 | 1995-01-26 | ハネウエル・インコーポレーテッド | 薄膜ピロ電気画像アレイ |
| GB2274543A (en) * | 1993-01-21 | 1994-07-27 | Central Research Lab Ltd | Infrared detector |
| US5942791A (en) * | 1996-03-06 | 1999-08-24 | Gec-Marconi Limited | Micromachined devices having microbridge structure |
| GB9604786D0 (en) * | 1996-03-06 | 1996-09-25 | Marconi Gec Ltd | Micromachined devices |
| DE69702331T2 (de) | 1997-01-14 | 2000-12-14 | Infrared Integrated Systems Ltd., Towcester | Sensor mit einem Detektorfeld |
| GB2335077B (en) * | 1998-03-04 | 2003-05-28 | Marconi Gec Ltd | Radiation detectors |
| FR2788885B1 (fr) * | 1999-01-21 | 2003-07-18 | Commissariat Energie Atomique | Dispositif de detection thermique de rayonnements electromagnetiques et procede de fabrication de celui-ci |
| EP1178294A1 (fr) * | 2000-08-04 | 2002-02-06 | Ecole Polytechnique Federale De Lausanne | Capteur pyroélectrique ayant entre ses pixels un couplage thermique parasite réduit |
| JP2004529510A (ja) * | 2001-06-08 | 2004-09-24 | アイアール・マイクロシステムズ・エス エイ | 赤外線センサおよびその作成方法 |
| FR2862160B1 (fr) * | 2003-11-10 | 2006-05-12 | Ulis | Dispositif de detection de rayonnements infrarouges a detecteurs bolometriques |
| FR2875606B1 (fr) | 2004-09-22 | 2006-11-10 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique et de particules a nombre de connexions reduit |
| DE102005001966B4 (de) * | 2005-01-15 | 2009-08-20 | Infratec Gmbh Infrarotsensorik Und Messtechnik | Mikrophoniereduzierter pyroelektrischer Detektor |
| JP5644121B2 (ja) * | 2010-01-26 | 2014-12-24 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置、電子機器および熱型光検出器の製造方法 |
| WO2011111309A1 (fr) * | 2010-03-11 | 2011-09-15 | パナソニック株式会社 | Procédé de mesure thermique à l'aide d'un capteur pyroélectrique de température |
| CN102437166B (zh) * | 2011-10-09 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种非制冷红外探测系统像素阵列的制作方法 |
| FR3006438B1 (fr) | 2013-06-04 | 2015-06-26 | Commissariat Energie Atomique | Capteur de temperature |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801949A (en) * | 1973-03-08 | 1974-04-02 | Rca Corp | Thermal detector and method of making the same |
| US4039833A (en) * | 1976-08-17 | 1977-08-02 | The United States Of America As Represented By The Secretary Of The Navy | High density infrared detector array |
| GB1523347A (en) * | 1976-11-16 | 1978-08-31 | Secr Defence | Pyroelectric tragets |
| GB1532293A (en) * | 1977-06-14 | 1978-11-15 | Secr Defence | Pyroelectric vidicon targets and a method and machine for reticulating them |
| GB1592500A (en) * | 1977-12-01 | 1981-07-08 | Roundy C B | Pyroelectric infrared detection system |
| GB2030023B (en) * | 1977-12-19 | 1982-08-04 | Texas Instruments Inc | Ferroelectric imaging system |
| GB2028579B (en) * | 1978-08-22 | 1982-12-22 | English Electric Valve Co Ltd | Target for a pyroelectric camera |
| US4317063A (en) * | 1978-10-28 | 1982-02-23 | Plessey Handel Und Investments Ag | Pyroelectric detectors |
| GB2035685B (en) * | 1978-10-28 | 1983-05-05 | Plessey Co Ltd | Pyroelectric detectors |
| US4532434A (en) * | 1978-10-30 | 1985-07-30 | Phillips Petroleum Company | Waveform generator |
| US4354109A (en) * | 1979-12-31 | 1982-10-12 | Honeywell Inc. | Mounting for pyroelectric detecctor arrays |
| DE3045118C2 (de) * | 1980-11-29 | 1983-10-13 | Georg Dipl.-Ing. 7500 Karlsruhe Richter | Infrarotdetektor und Verfahren zur Herstellung |
| GB2095905B (en) * | 1981-03-27 | 1985-01-16 | Philips Electronic Associated | Infra-red radiation imaging devices and methods for their manufacture |
| GB2100058B (en) * | 1981-06-05 | 1985-03-20 | Philips Electronic Associated | Pyroelectric detector |
| US4532424A (en) * | 1983-04-25 | 1985-07-30 | Rockwell International Corporation | Pyroelectric thermal detector array |
| GB2163596B (en) * | 1984-08-24 | 1988-02-03 | Philips Electronic Associated | A thermal imaging device and a method of manufacturing a thermal imaging device |
-
1985
- 1985-09-12 GB GB8522638A patent/GB2200246B/en not_active Expired
-
1986
- 1986-09-12 NL NL8615006A patent/NL8615006A/nl not_active Application Discontinuation
- 1986-09-12 DE DE19863644882 patent/DE3644882A1/de not_active Ceased
-
1987
- 1987-04-07 FR FR8704869A patent/FR2620531B1/fr not_active Expired - Fee Related
- 1987-04-07 FR FR878704868A patent/FR2624603B1/fr not_active Expired - Fee Related
- 1987-06-17 SE SE8702531A patent/SE466571B/sv not_active IP Right Cessation
- 1987-07-16 IT IT8721315A patent/IT1235675B/it active
-
1988
- 1988-08-10 BE BEBTR0000102T patent/BE102T1/fr not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2200246B (en) | 1989-11-01 |
| FR2620531B1 (fr) | 1993-11-05 |
| DE3644882A1 (de) | 1988-11-17 |
| FR2624603B1 (fr) | 1993-04-30 |
| BE102T1 (fr) | 1988-08-10 |
| SE8702531D0 (sv) | 1987-06-17 |
| SE8702531L (sv) | 1988-08-06 |
| NL8615006A (nl) | 1988-08-01 |
| IT1235675B (it) | 1992-09-21 |
| FR2620531A1 (fr) | 1989-03-17 |
| FR2624603A1 (fr) | 1989-06-16 |
| GB2200246A (en) | 1988-07-27 |
| GB8522638D0 (en) | 1988-05-25 |
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| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
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