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SE431806B - ENHANCING TYRISTOR - Google Patents

ENHANCING TYRISTOR

Info

Publication number
SE431806B
SE431806B SE7711699A SE7711699A SE431806B SE 431806 B SE431806 B SE 431806B SE 7711699 A SE7711699 A SE 7711699A SE 7711699 A SE7711699 A SE 7711699A SE 431806 B SE431806 B SE 431806B
Authority
SE
Sweden
Prior art keywords
tyristor
enhancing
enhancing tyristor
Prior art date
Application number
SE7711699A
Other languages
Swedish (sv)
Other versions
SE7711699L (en
Inventor
A P Ferro
V A K Temple
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7711699L publication Critical patent/SE7711699L/en
Publication of SE431806B publication Critical patent/SE431806B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
SE7711699A 1976-10-18 1977-10-17 ENHANCING TYRISTOR SE431806B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73320576A 1976-10-18 1976-10-18

Publications (2)

Publication Number Publication Date
SE7711699L SE7711699L (en) 1978-04-19
SE431806B true SE431806B (en) 1984-02-27

Family

ID=24946651

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7711699A SE431806B (en) 1976-10-18 1977-10-17 ENHANCING TYRISTOR

Country Status (6)

Country Link
JP (1) JPS584828B2 (en)
DE (1) DE2746406C2 (en)
FR (1) FR2368146A1 (en)
GB (1) GB1573234A (en)
IT (1) IT1087185B (en)
SE (1) SE431806B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204163A (en) * 1981-06-11 1982-12-14 Toyo Electric Mfg Co Ltd Semiconductor device
JPS583283A (en) * 1981-06-30 1983-01-10 Toshiba Corp thyristor
JPS5998556A (en) * 1982-11-26 1984-06-06 Mitsubishi Electric Corp light triggered thyristor
GB2150347B (en) * 1983-11-21 1987-02-25 Westinghouse Brake & Signal Amplifying gate thyristor with zones of different cathode-gate resistance
JPS60192124A (en) * 1984-03-09 1985-09-30 Daikin Mfg Co Ltd Friction device for damper disc
JPS63201246U (en) * 1987-06-17 1988-12-26

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
JPS5021346B1 (en) * 1970-08-14 1975-07-22
GB1346074A (en) * 1971-02-23 1974-02-06 Gen Electric Gate-controlled thyristors
GB1346604A (en) * 1971-02-26 1974-02-13 Gen Electric Gate controlled thyristor
JPS5229592B2 (en) * 1971-10-01 1977-08-03
JPS539516B2 (en) * 1971-12-29 1978-04-06
DE2329872C3 (en) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2356906A1 (en) * 1973-11-14 1975-05-22 Siemens Ag THYRISTOR
CH567803A5 (en) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie
DE2407696C3 (en) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor

Also Published As

Publication number Publication date
JPS5368083A (en) 1978-06-17
JPS584828B2 (en) 1983-01-27
DE2746406A1 (en) 1978-04-20
FR2368146A1 (en) 1978-05-12
GB1573234A (en) 1980-08-20
IT1087185B (en) 1985-05-31
FR2368146B1 (en) 1984-01-06
SE7711699L (en) 1978-04-19
DE2746406C2 (en) 1983-08-25

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