[go: up one dir, main page]

JPS57204163A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57204163A
JPS57204163A JP56088893A JP8889381A JPS57204163A JP S57204163 A JPS57204163 A JP S57204163A JP 56088893 A JP56088893 A JP 56088893A JP 8889381 A JP8889381 A JP 8889381A JP S57204163 A JPS57204163 A JP S57204163A
Authority
JP
Japan
Prior art keywords
firing
regions
substrate
parts
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56088893A
Other languages
Japanese (ja)
Inventor
Naohiro Shimizu
Sozaburo Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Denki Seizo KK
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Denki Seizo KK, Toyo Electric Manufacturing Ltd filed Critical Toyo Denki Seizo KK
Priority to JP56088893A priority Critical patent/JPS57204163A/en
Publication of JPS57204163A publication Critical patent/JPS57204163A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To improve the firing characteristic of a thyristor , by selectively shaving off the surface part of a substrate between a gate and cathode electrodes arranged at the center of the same surface of a semiconductor substrate. CONSTITUTION:The substrate 1 is equally divided into six regions A-F with cutting part Ce' respectively provided on the regions A, C and E. When firing the thyristor, the firing of the regions B, D and F easily fired parts accompanies the firing of the regions A, C and E not easily fired parts. Therefore, the current required to fire all of the parts is enough at half value thereof. Thus, firing characteristic can be controlled.
JP56088893A 1981-06-11 1981-06-11 Semiconductor device Pending JPS57204163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088893A JPS57204163A (en) 1981-06-11 1981-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088893A JPS57204163A (en) 1981-06-11 1981-06-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57204163A true JPS57204163A (en) 1982-12-14

Family

ID=13955644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088893A Pending JPS57204163A (en) 1981-06-11 1981-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57204163A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997028566A1 (en) * 1996-01-31 1997-08-07 Beacon Light Products, Inc. Smooth switching thyristor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368083A (en) * 1976-10-18 1978-06-17 Gen Electric Amplification gate thyristor
JPS5457973A (en) * 1977-10-18 1979-05-10 Nec Corp Semiconductor device for switching control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368083A (en) * 1976-10-18 1978-06-17 Gen Electric Amplification gate thyristor
JPS5457973A (en) * 1977-10-18 1979-05-10 Nec Corp Semiconductor device for switching control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997028566A1 (en) * 1996-01-31 1997-08-07 Beacon Light Products, Inc. Smooth switching thyristor
US5818074A (en) * 1996-01-31 1998-10-06 Beacon Light Products, Inc. Smooth switching thyristor

Similar Documents

Publication Publication Date Title
JPS57204163A (en) Semiconductor device
JPS5312281A (en) Semiconductor control rectifying element
JPS5739574A (en) Semiconductor device
JPS51142983A (en) Scr
JPS5453972A (en) Reverse conducting thyristor
JPS531546A (en) Display for car
JPS5346290A (en) Semiconductor device
JPS51135478A (en) Semiconductor controlled rectifier
JPS5368986A (en) Mos type transistor
JPS52125265A (en) Semiconductor control unit
JPS5326588A (en) Semicond uctor control device
JPS5323283A (en) Thyristor
JPS5236963A (en) Control device for thyristor
JPS5387676A (en) Semiconductor control rectifier
JPS5735379A (en) Semiconductor device
JPS5313361A (en) Manufacture of glass-molded diode
JPS53143881A (en) Thermosensing controller
JPS56166767A (en) Forced firing circuit for thyristor
JPS5717170A (en) Epitaxial type transistor and manufacture thereof
JPS5242383A (en) Gate turn-off thryistor
JPS57139971A (en) Semiconductor device with high withstand voltage
JPS5745278A (en) 3-terminal bidirectional thyristor
JPS57124471A (en) Transistor
JPS5413276A (en) Semiconductor rectifying element of gate control
JPS5383473A (en) Thyristor