SE412818B - Sett att framstella en halvdedarminnesanordning - Google Patents

Sett att framstella en halvdedarminnesanordning

Info

Publication number: SE412818B
Authority: SE; Sweden
Prior art keywords: semi; make; installation device; installation
Prior art date: 1975-08-18

Application number

SE7608839A

Other languages

English (en)

Swedish (sv)

Other versions

SE7608839L (sv

Inventor

D Kahng

Bate E E La

M P Lepselter

J R Ligenza

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-08-18

Filing date

1976-08-06

Publication date

1980-03-17

1976-08-06 Application filed by Western Electric Co filed Critical Western Electric Co

1977-02-19 Publication of SE7608839L publication Critical patent/SE7608839L/

1980-03-17 Publication of SE412818B publication Critical patent/SE412818B/xx

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

SE7608839A 1975-08-18 1976-08-06 Sett att framstella en halvdedarminnesanordning SE412818B (sv)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/605,312 US3964085A (en)	1975-08-18	1975-08-18	Method for fabricating multilayer insulator-semiconductor memory apparatus

Publications (2)

Publication Number	Publication Date
SE7608839L SE7608839L (sv)	1977-02-19
SE412818B true SE412818B (sv)	1980-03-17

Family

ID=24423144

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE7608839A SE412818B (sv)	1975-08-18	1976-08-06	Sett att framstella en halvdedarminnesanordning

Country Status (11)

Country	Link
US (1)	US3964085A (xx)
JP (1)	JPS6032973B2 (xx)
BE (1)	BE845154A (xx)
CA (1)	CA1052009A (xx)
DE (1)	DE2636961C2 (xx)
ES (1)	ES450758A1 (xx)
FR (1)	FR2321768A2 (xx)
GB (1)	GB1552161A (xx)
IT (1)	IT1071194B (xx)
NL (1)	NL7608923A (xx)
SE (1)	SE412818B (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4206251A (en) *	1978-06-01	1980-06-03	Hughes Aircraft Company	Method for diffusing metals into substrates
US4329016A (en) *	1978-06-01	1982-05-11	Hughes Aircraft Company	Optical waveguide formed by diffusing metal into substrate
US6391801B1 (en)	1999-09-01	2002-05-21	Micron Technology, Inc.	Method of forming a layer comprising tungsten oxide
DE19955602A1 (de) *	1999-11-18	2001-05-31	Infineon Technologies Ag	Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung
US6953730B2 (en)	2001-12-20	2005-10-11	Micron Technology, Inc.	Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US7154140B2 (en) *	2002-06-21	2006-12-26	Micron Technology, Inc.	Write once read only memory with large work function floating gates
US7193893B2 (en)	2002-06-21	2007-03-20	Micron Technology, Inc.	Write once read only memory employing floating gates
US6804136B2 (en) *	2002-06-21	2004-10-12	Micron Technology, Inc.	Write once read only memory employing charge trapping in insulators
US6970370B2 (en) *	2002-06-21	2005-11-29	Micron Technology, Inc.	Ferroelectric write once read only memory for archival storage
US6996009B2 (en) *	2002-06-21	2006-02-07	Micron Technology, Inc.	NOR flash memory cell with high storage density
US6888739B2 (en)	2002-06-21	2005-05-03	Micron Technology Inc.	Nanocrystal write once read only memory for archival storage
US7221586B2 (en)	2002-07-08	2007-05-22	Micron Technology, Inc.	Memory utilizing oxide nanolaminates
US7847344B2 (en)	2002-07-08	2010-12-07	Micron Technology, Inc.	Memory utilizing oxide-nitride nanolaminates
US7221017B2 (en)	2002-07-08	2007-05-22	Micron Technology, Inc.	Memory utilizing oxide-conductor nanolaminates
US6865407B2 (en) *	2002-07-11	2005-03-08	Optical Sensors, Inc.	Calibration technique for non-invasive medical devices
US6903969B2 (en) *	2002-08-30	2005-06-07	Micron Technology Inc.	One-device non-volatile random access memory cell
US6917078B2 (en) *	2002-08-30	2005-07-12	Micron Technology Inc.	One transistor SOI non-volatile random access memory cell
US6888200B2 (en) *	2002-08-30	2005-05-03	Micron Technology Inc.	One transistor SOI non-volatile random access memory cell
US8125003B2 (en) *	2003-07-02	2012-02-28	Micron Technology, Inc.	High-performance one-transistor memory cell
US7145186B2 (en)	2004-08-24	2006-12-05	Micron Technology, Inc.	Memory cell with trenched gated thyristor
US7927948B2 (en)	2005-07-20	2011-04-19	Micron Technology, Inc.	Devices with nanocrystals and methods of formation
US7709402B2 (en)	2006-02-16	2010-05-04	Micron Technology, Inc.	Conductive layers for hafnium silicon oxynitride films
JP2013197121A (ja) *	2012-03-15	2013-09-30	Toshiba Corp	半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4844581B1 (xx) *	1969-03-15	1973-12-25
US3877054A (en) *	1973-03-01	1975-04-08	Bell Telephone Labor Inc	Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor

1975
- 1975-08-18 US US05/605,312 patent/US3964085A/en not_active Expired - Lifetime
1976
- 1976-08-06 SE SE7608839A patent/SE412818B/xx not_active IP Right Cessation
- 1976-08-10 CA CA258,791A patent/CA1052009A/en not_active Expired
- 1976-08-11 NL NL7608923A patent/NL7608923A/xx not_active Application Discontinuation
- 1976-08-13 BE BE169778A patent/BE845154A/xx not_active IP Right Cessation
- 1976-08-16 JP JP51097145A patent/JPS6032973B2/ja not_active Expired
- 1976-08-16 FR FR7624909A patent/FR2321768A2/fr active Granted
- 1976-08-17 DE DE2636961A patent/DE2636961C2/de not_active Expired
- 1976-08-17 ES ES450758A patent/ES450758A1/es not_active Expired
- 1976-08-17 IT IT69038/76A patent/IT1071194B/it active
- 1976-08-17 GB GB34143/76A patent/GB1552161A/en not_active Expired

Also Published As

Publication number	Publication date
GB1552161A (en)	1979-09-12
US3964085A (en)	1976-06-15
CA1052009A (en)	1979-04-03
NL7608923A (nl)	1977-02-22
ES450758A1 (es)	1977-08-16
BE845154A (fr)	1976-12-01
JPS6032973B2 (ja)	1985-07-31
SE7608839L (sv)	1977-02-19
DE2636961C2 (de)	1984-09-13
IT1071194B (it)	1985-04-02
JPS5224473A (en)	1977-02-23
FR2321768B2 (xx)	1980-04-30
FR2321768A2 (fr)	1977-03-18
DE2636961A1 (de)	1977-03-03

Publication	Publication Date	Title
SE414562B (sv)	1980-08-04	Sett att tillverka en halvledaranordning
SE409779B (sv)	1979-09-03	Sett att framstella en halvledaranordning
SE432247B (sv)	1984-03-26	Sett att framstella dihydro-cyklosporin c
SE433222B (sv)	1984-05-14	Sett att framstella modifierad polysackarid
SE404568B (sv)	1978-10-09	Sett att framstella en halvledaranordning
SE414980B (sv)	1980-08-25	Sett att framstella en halvledaranordning
SE412818B (sv)	1980-03-17	Sett att framstella en halvdedarminnesanordning
SE431935B (sv)	1984-03-12	Sett att framstella drageer
SE422077B (sv)	1982-02-15	Sett att framstella syntesgas
SE7606280L (sv)	1976-12-07	Sett att framstella etrar
SE440779B (sv)	1985-08-19	Sett att framstella androstan-17-on-derivat
SE7705358L (sv)	1977-11-12	Sett att framstella en halvledaranordning
SE7708968L (sv)	1978-02-12	Sett att framstella en halvledaranordning
SE414437B (sv)	1980-07-28	Anordning vid en generator
SE441042B (sv)	1985-09-02	Sett att pavisa rheumatoida faktorer
SE7800261L (sv)	1978-08-29	Sett att tillverka en halvledaranordning
SE420728B (sv)	1981-10-26	Sett att framstella piperazinyliminorifamyciner
SE425736B (sv)	1982-11-01	Sett att framstella kromanon-(4)
SE432256B (sv)	1984-03-26	Sett att framstella cellulosaalkyletrar
SE443156B (sv)	1986-02-17	Sett att behandla en pb-cu-s-charge
SE427111B (sv)	1983-03-07	Sett att framstella pilokarpiniumsalter
SE430344B (sv)	1983-11-07	Sett att framstella oorienterad kiselstalplat
IT1054279B (it)	1981-11-10	Dispositivo a racla
SE430687B (sv)	1983-12-05	Sett att framstella hexanitrostilben
DK149919C (da)	1987-06-01	Borenhed

Legal Events

Date	Code	Title	Description
1995-01-31	NUG	Patent has lapsed	Ref document number: 7608839-2 Effective date: 19890911 Format of ref document f/p: F

Date

Code

Title

Description

1995-01-31

NUG

Patent has lapsed

Ref document number: 7608839-2

Effective date: 19890911

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