SE325081B - - Google Patents
Info
- Publication number
- SE325081B SE325081B SE12332/65A SE1233265A SE325081B SE 325081 B SE325081 B SE 325081B SE 12332/65 A SE12332/65 A SE 12332/65A SE 1233265 A SE1233265 A SE 1233265A SE 325081 B SE325081 B SE 325081B
- Authority
- SE
- Sweden
- Prior art keywords
- gaas
- region
- substrate
- transistor
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US398540A US3366517A (en) | 1964-09-23 | 1964-09-23 | Formation of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SE325081B true SE325081B (fr) | 1970-06-22 |
Family
ID=23575772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE12332/65A SE325081B (fr) | 1964-09-23 | 1965-09-23 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3366517A (fr) |
CH (1) | CH438495A (fr) |
DE (1) | DE1288198B (fr) |
GB (1) | GB1045108A (fr) |
NL (1) | NL6512036A (fr) |
SE (1) | SE325081B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
US2974262A (en) * | 1957-06-11 | 1961-03-07 | Abraham George | Solid state device and method of making same |
US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
US3132057A (en) * | 1959-01-29 | 1964-05-05 | Raytheon Co | Graded energy gap semiconductive device |
US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
US3095324A (en) * | 1960-04-14 | 1963-06-25 | Gen Electric | Method for making electrically conducting films and article |
NL268758A (fr) * | 1960-09-20 | |||
US3234057A (en) * | 1961-06-23 | 1966-02-08 | Ibm | Semiconductor heterojunction device |
US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
-
1964
- 1964-09-23 US US398540A patent/US3366517A/en not_active Expired - Lifetime
-
1965
- 1965-08-24 GB GB36418/65A patent/GB1045108A/en not_active Expired
- 1965-09-16 NL NL6512036A patent/NL6512036A/xx unknown
- 1965-09-21 DE DEI29029A patent/DE1288198B/de active Pending
- 1965-09-22 CH CH1311965A patent/CH438495A/de unknown
- 1965-09-23 SE SE12332/65A patent/SE325081B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3366517A (en) | 1968-01-30 |
NL6512036A (fr) | 1966-03-24 |
CH438495A (de) | 1967-06-30 |
DE1288198B (de) | 1969-01-30 |
GB1045108A (en) | 1966-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1116384A (en) | Semiconductor device | |
GB770285A (en) | Multi-element semi-conductor devices | |
GB1026019A (en) | Improvements in or relating to semiconductor devices | |
GB1155578A (en) | Field Effect Transistor | |
GB1159937A (en) | Improvements in or relating to Semiconductor Devices. | |
GB1081368A (en) | Improvements in or relating to transistor devices | |
GB1326286A (en) | Transistors | |
GB1130718A (en) | Improvements in or relating to the epitaxial deposition of a semiconductor material | |
GB936832A (en) | Improvements relating to the production of p.n. junctions in semi-conductor material | |
GB1460037A (en) | Semiconductor devices | |
SE325081B (fr) | ||
GB1090696A (en) | Improvements in or relating to semiconductor devices | |
GB1303236A (fr) | ||
GB1472113A (en) | Semiconductor device circuits | |
GB1108774A (en) | Transistors | |
GB1358612A (en) | Monolithic semiconductor device | |
GB1063258A (en) | Improvements relating to transistors and their manufacture | |
GB1106787A (en) | Improvements in semiconductor devices | |
GB1053428A (fr) | ||
GB1287247A (en) | Improved semiconductor device with high junction breakdown voltage and method of manufacture | |
GB1127161A (en) | Improvements in or relating to diffused base transistors | |
GB1021147A (en) | Divided base four-layer semiconductor device | |
GB1098760A (en) | Method of making semiconductor device | |
GB1335037A (en) | Field effect transistor | |
GB1126587A (en) | Improvements in or relating to control transistors |