SE315929B - - Google Patents
Info
- Publication number
- SE315929B SE315929B SE11920/63A SE1192063A SE315929B SE 315929 B SE315929 B SE 315929B SE 11920/63 A SE11920/63 A SE 11920/63A SE 1192063 A SE1192063 A SE 1192063A SE 315929 B SE315929 B SE 315929B
- Authority
- SE
- Sweden
- Prior art keywords
- radiation
- semi
- stress
- junction
- class
- Prior art date
Links
- 230000005855 radiation Effects 0.000 abstract 12
- 239000004065 semiconductor Substances 0.000 abstract 10
- 230000006798 recombination Effects 0.000 abstract 5
- 238000005215 recombination Methods 0.000 abstract 5
- 230000005670 electromagnetic radiation Effects 0.000 abstract 4
- 230000000644 propagated effect Effects 0.000 abstract 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 2
- 230000001902 propagating effect Effects 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005489 elastic deformation Effects 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000013598 vector Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
- G02F1/178—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on pressure effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US234154A US3387230A (en) | 1962-10-30 | 1962-10-30 | Stress modulation of recombination radiation in semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE315929B true SE315929B (xx) | 1969-10-13 |
Family
ID=22880175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE11920/63A SE315929B (xx) | 1962-10-30 | 1963-10-30 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3387230A (xx) |
| JP (1) | JPS4115459B1 (xx) |
| CH (1) | CH415886A (xx) |
| GB (1) | GB1008743A (xx) |
| NL (1) | NL299169A (xx) |
| SE (1) | SE315929B (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1291029B (de) * | 1963-02-21 | 1969-03-20 | Siemens Ag | Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung |
| US3483397A (en) * | 1963-10-16 | 1969-12-09 | Westinghouse Electric Corp | Apparatus and method for controlling the output of a light emitting semiconductor device |
| US3482189A (en) * | 1964-03-24 | 1969-12-02 | Gen Electric | Frequency control of semiconductive junction lasers by application of force |
| DE1514315A1 (de) * | 1965-08-10 | 1969-04-24 | Philips Patentverwaltung | Modulationsverfahren und Modulator fuer elektromagnetische Strahlung mittels Doppelbrechung |
| US3518508A (en) * | 1965-12-10 | 1970-06-30 | Matsushita Electric Ind Co Ltd | Transducer |
| US3465176A (en) * | 1965-12-10 | 1969-09-02 | Matsushita Electric Ind Co Ltd | Pressure sensitive bilateral negative resistance device |
| US3530400A (en) * | 1966-08-30 | 1970-09-22 | Massachusetts Inst Technology | Acoustically modulated laser |
| US3483487A (en) * | 1966-12-29 | 1969-12-09 | Bell Telephone Labor Inc | Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning |
| US3624465A (en) * | 1968-06-26 | 1971-11-30 | Rca Corp | Heterojunction semiconductor transducer having a region which is piezoelectric |
| US3562414A (en) * | 1969-09-10 | 1971-02-09 | Zenith Radio Corp | Solid-state image display device with acoustic scanning of strain-responsive semiconductor |
| US3792321A (en) * | 1971-08-26 | 1974-02-12 | F Seifert | Piezoelectric semiconductor devices in which sound energy increases the breakdown voltage and power of capabilities |
| US4141025A (en) * | 1977-03-24 | 1979-02-20 | Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" | Semiconductor structure sensitive to pressure |
| SE423752B (sv) * | 1980-09-29 | 1982-05-24 | Asea Ab | Optiskt sensorelement |
| DE3210086A1 (de) * | 1982-03-19 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode, geeignet als drucksensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE639066A (xx) * | 1962-10-24 | 1900-01-01 |
-
0
- NL NL299169D patent/NL299169A/xx unknown
-
1962
- 1962-10-30 US US234154A patent/US3387230A/en not_active Expired - Lifetime
-
1963
- 1963-10-07 GB GB39367/63A patent/GB1008743A/en not_active Expired
- 1963-10-21 JP JP5591963A patent/JPS4115459B1/ja active Pending
- 1963-10-29 CH CH1323463A patent/CH415886A/de unknown
- 1963-10-30 SE SE11920/63A patent/SE315929B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4115459B1 (xx) | 1966-08-31 |
| CH415886A (de) | 1966-06-30 |
| NL299169A (xx) | |
| US3387230A (en) | 1968-06-04 |
| GB1008743A (en) | 1965-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SE315929B (xx) | ||
| US3359483A (en) | High voltage regulator | |
| USRE25632E (en) | Optical maser | |
| US3724926A (en) | Optical pulse modulator | |
| US2692952A (en) | Semiconductive light valve | |
| GB1163941A (en) | Amplifier | |
| JPS5515035A (en) | Photo detector | |
| GB1531263A (en) | Optoelectronic device | |
| GB1044447A (en) | Improvements relating to electro-optical devices | |
| GB1141098A (en) | Semiconductor voltage transformer | |
| GB1022307A (en) | Improvements in or relating to circuit arrangements employing photo-electric devices | |
| US3319068A (en) | Opto-electronic semiconductor junction device | |
| Radunovic et al. | Nonstationary and nonlinear response of a pin photodiode made of a two-valley semiconductor | |
| GB1049418A (en) | Distortion compensation of optoelectronic devices | |
| GB1186945A (en) | Improvements relating to Semiconductor Devices | |
| GB1102749A (en) | A light modulator arrangement | |
| GB1112411A (en) | Improvements in and relating to semiconductor devices | |
| Brain | Comparison of available detectors for digital optical fiber systems for the 1.2-1.55 µm wavelength range | |
| US3483487A (en) | Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning | |
| US3558889A (en) | Bulk semiconductor light radiating device | |
| US3599000A (en) | Semiconductor optoelectronic logic element utilizing the gunn effect | |
| GB1161269A (en) | Semiconductive Controlled Rectifiers | |
| Campbell et al. | Optical AND gate | |
| FR1488620A (fr) | Dispositif de communication bilatérale | |
| GB1037616A (en) | Improvements in or relating to electromechanical devices |