SE309575B - - Google Patents

Info

Publication number: SE309575B
Authority: SE; Sweden

Application number

SE9149/63A

Inventor

T Rummel

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-12-09

Filing date

1963-08-21

Publication date

1969-03-31

1958-12-09 Priority claimed from DES60887A external-priority patent/DE1139812B/de

1963-08-21 Application filed by Siemens Ag filed Critical Siemens Ag

1969-03-31 Publication of SE309575B publication Critical patent/SE309575B/xx

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Inorganic Chemistry (AREA)
Crystallography & Structural Chemistry (AREA)
Silicon Compounds (AREA)
Chemical Vapour Deposition (AREA)

SE9149/63A 1958-12-09 1963-08-21 SE309575B (xx)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DES60887A DE1139812B (de)	1958-12-09	1958-12-09	Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung
DES81031A DE1220391B (de)	1958-12-09	1962-08-22	Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper

Publications (1)

Publication Number	Publication Date
SE309575B true SE309575B (xx)	1969-03-31

Family

ID=25995608

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE9149/63A SE309575B (xx)	1958-12-09	1963-08-21

Country Status (6)

Country	Link
US (2)	US3134695A (xx)
CH (1)	CH411804A (xx)
DE (1)	DE1220391B (xx)
GB (1)	GB997336A (xx)
NL (3)	NL295321A (xx)
SE (1)	SE309575B (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3169892A (en) *	1959-04-08	1965-02-16	Jerome H Lemelson	Method of making a multi-layer electrical circuit
NL246189A (xx) *	1958-12-09
DE1223804B (de) *	1961-01-26	1966-09-01	Siemens Ag	Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
DE2050076C3 (de) *	1970-10-12	1980-06-26	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
US3756193A (en) *	1972-05-01	1973-09-04	Battelle Memorial Institute	Coating apparatus
JPS5656649U (xx) *	1980-06-13	1981-05-16
US4805556A (en) *	1988-01-15	1989-02-21	Union Carbide Corporation	Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5478396A (en) *	1992-09-28	1995-12-26	Advanced Silicon Materials, Inc.	Production of high-purity polycrystalline silicon rod for semiconductor applications
US5382419A (en) *	1992-09-28	1995-01-17	Advanced Silicon Materials, Inc.	Production of high-purity polycrystalline silicon rod for semiconductor applications
US8540818B2 (en) *	2009-04-28	2013-09-24	Mitsubishi Materials Corporation	Polycrystalline silicon reactor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1066564B (de) *		1959-10-08	Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München	Verfahren zur Herstellung von reinstem Silicium für Halbleiteranordnungen
US1439410A (en) *	1921-06-14	1922-12-19	James H Gray	Refractory material and furnace wall built thereof
US1912017A (en) *	1931-09-23	1933-05-30	Owens Illinois Glass Co	Heat insulator
US2119259A (en) *	1932-06-15	1938-05-31	Owens Illinois Glass Co	Method of making articles of vitreous material
US2801607A (en) *	1952-08-06	1957-08-06	Centre Nat Rech Scient	Apparatus for applying material by thermal vaporization in the manufacture of electrical resistors
US2845894A (en) *	1953-03-04	1958-08-05	Oran T Mcilvaine	Metallurgy
US2828225A (en) *	1954-03-01	1958-03-25	Sintercast Corp America	Methods of infiltrating high melting skeleton bodies
NL122356C (xx) *	1954-05-18	1900-01-01
US2927004A (en) *	1955-05-31	1960-03-01	Bjorksten Res Lab Inc	Preparation of pure silicon or germanium from their alkyls
US2883269A (en) *	1955-09-22	1959-04-21	Du Pont	Production of elemental silicon
US2955466A (en) *	1955-12-01	1960-10-11	Robertshaw Fulton Controls Co	Test probe
US3011877A (en) *	1956-06-25	1961-12-05	Siemens Ag	Production of high-purity semiconductor materials for electrical purposes
US2890139A (en) *	1956-12-10	1959-06-09	Shockley William	Semi-conductive material purification method and apparatus
US3081201A (en) *	1957-05-15	1963-03-12	Gen Electric	Method of forming an electric capacitor
NL246189A (xx) *	1958-12-09
US2948635A (en) *	1959-01-12	1960-08-09	Gen Electric	Phosphor evaporation method and apparatus
DE1082239B (de) *	1959-05-21	1960-05-25	Licentia Gmbh	Verfahren zum Herstellen von Siliciumstaeben
NL256255A (xx) *	1959-11-02
US3098763A (en) *	1961-05-29	1963-07-23	Raytheon Co	Chemical reactor

0
- NL NL246189D patent/NL246189A/xx unknown
- NL NL124906D patent/NL124906C/xx active
- NL NL295321D patent/NL295321A/xx unknown
1959
- 1959-12-08 US US858223A patent/US3134695A/en not_active Expired - Lifetime
1962
- 1962-08-22 DE DES81031A patent/DE1220391B/de active Pending
1963
- 1963-06-18 CH CH753263A patent/CH411804A/de unknown
- 1963-08-07 US US300586A patent/US3358638A/en not_active Expired - Lifetime
- 1963-08-21 SE SE9149/63A patent/SE309575B/xx unknown
- 1963-08-21 GB GB33063/63A patent/GB997336A/en not_active Expired

Also Published As

Publication number	Publication date
US3134695A (en)	1964-05-26
DE1220391B (de)	1966-07-07
GB997336A (en)	1965-07-07
NL124906C (xx)
CH411804A (de)	1966-04-30
US3358638A (en)	1967-12-19
NL246189A (xx)
NL295321A (xx)

Publication	Publication Date	Title
AT214638B (xx)	1961-04-25
AT221043B (xx)	1962-04-25
AT217439B (xx)	1961-10-10
AT215747B (xx)	1961-06-26
AT213908B (xx)	1961-03-10
AT213446B (xx)	1961-02-27
AT216227B (xx)	1961-07-10
AT215751B (xx)	1961-06-26
AT219815B (xx)	1962-02-26
AT219868B (xx)	1962-02-26
AT214270B (xx)	1961-03-27
AT214348B (xx)	1961-03-27
AT213631B (xx)	1961-02-27
AT215738B (xx)	1961-06-26
AT213670B (xx)	1961-02-27
AT213557B (xx)	1961-02-27
AT213472B (xx)	1961-02-27
AT216612B (xx)	1961-08-10
AT213558B (xx)	1961-02-27
AT216771B (xx)	1961-08-25
AT216803B (xx)	1961-08-25
AT216831B (xx)	1961-08-25
AT213337B (xx)	1961-02-10
AT217982B (xx)	1961-11-10
BE455804A (xx)