GB997336A - Improvements in or relating to apparatus for the preparation of rod-shaped members of semiconductor material of very high purity - Google Patents
Improvements in or relating to apparatus for the preparation of rod-shaped members of semiconductor material of very high purityInfo
- Publication number
- GB997336A GB997336A GB33063/63A GB3306363A GB997336A GB 997336 A GB997336 A GB 997336A GB 33063/63 A GB33063/63 A GB 33063/63A GB 3306363 A GB3306363 A GB 3306363A GB 997336 A GB997336 A GB 997336A
- Authority
- GB
- United Kingdom
- Prior art keywords
- quartz
- carriers
- plate
- base plate
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 235000012239 silicon dioxide Nutrition 0.000 abstract 8
- 239000007789 gas Substances 0.000 abstract 6
- 239000010453 quartz Substances 0.000 abstract 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- 239000000969 carrier Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 238000005192 partition Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910003826 SiH3Cl Inorganic materials 0.000 abstract 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A semi-conductor material is deposited from a gas on to a rod-shaped, preferably mono-crystalline, core of the same material heated by an electric current flowing through it, in a vessel which has an upper and lower chamber containing one or more carriers and their supports respectively, and having a metal base plate covered with an insulating material. Quartz dome 3 and partition 3 make a vacuum tight joint with plate 19, which covers Cu or Ag base plate 1 which may be water-cooled. Carriers 6, 7, 8 are mounted on current supply leads 11, 12, e.g. of Cu, and supports 9, 10 of carbon or Si, or coated with Si. Plate 19 may be 6 mm. thick and made of quartz, sintered SiO2, glass containing added Al2O3 and B2O3 or ceramic. Reaction gases enter at nozzle 4, which is formed, or has a hood of, quartz, and H2 or argon may be supplied at 16; gases are exhausted at 5. Deposition of Si from SiH3Cl is exemplified; temperatures of 160-400 DEG C. then being maintained. Specification 907,510 is referred to. <PICT:0997336/C1/1>ALSO:<PICT:0997336/C6-C7/1> Germanium is deposited from a gas on to a rod-shaped, preferably monocrystalline, core of germanium, heated by an electric current flowing through it, in a vessel which has an upper and lower chamber containing one or more carriers and their supports respectively, and having a metal base plate covered with an insulating material. Quartz dome 2 and partition 3 make a vacuum tight joint with plate 19, which covers Cu or Ag base plate 1, which may be water-cooled. Carriers 6, 7, 8 are mounted on current supply beds 11, 12, e.g. of Cu, and supports 9, 10, e.g. of carbon. Plate 19 may be 6 mm. thick and made of quartz, sintered SiO2, glass containing added Al2O3 and B2O3, or ceramic. Reaction gases enter at nozzle 4, which is formed of, or has a hood of, quartz, and H2 or argon may be supplied at 16; gases are exhausted at 5. Specification 907,510 is referred to.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES60887A DE1139812B (en) | 1958-12-09 | 1958-12-09 | Device for obtaining rod-shaped semiconductor bodies and method for operating this device |
| DES81031A DE1220391B (en) | 1958-12-09 | 1962-08-22 | Device for obtaining rod-shaped semiconductor bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB997336A true GB997336A (en) | 1965-07-07 |
Family
ID=25995608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33063/63A Expired GB997336A (en) | 1958-12-09 | 1963-08-21 | Improvements in or relating to apparatus for the preparation of rod-shaped members of semiconductor material of very high purity |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3134695A (en) |
| CH (1) | CH411804A (en) |
| DE (1) | DE1220391B (en) |
| GB (1) | GB997336A (en) |
| NL (3) | NL295321A (en) |
| SE (1) | SE309575B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3169892A (en) * | 1959-04-08 | 1965-02-16 | Jerome H Lemelson | Method of making a multi-layer electrical circuit |
| NL246189A (en) * | 1958-12-09 | |||
| DE1223804B (en) * | 1961-01-26 | 1966-09-01 | Siemens Ag | Device for the extraction of pure semiconductor material, such as silicon |
| DE2050076C3 (en) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Device for manufacturing tubes from semiconductor material |
| US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
| JPS5656649U (en) * | 1980-06-13 | 1981-05-16 | ||
| US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
| US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
| US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1066564B (en) * | 1959-10-08 | Siemens iS. Halske Aktiengesellschaft, Berlin1 und1 München | Process for the production of the purest silicon for semiconductor devices | |
| US1439410A (en) * | 1921-06-14 | 1922-12-19 | James H Gray | Refractory material and furnace wall built thereof |
| US1912017A (en) * | 1931-09-23 | 1933-05-30 | Owens Illinois Glass Co | Heat insulator |
| US2119259A (en) * | 1932-06-15 | 1938-05-31 | Owens Illinois Glass Co | Method of making articles of vitreous material |
| US2801607A (en) * | 1952-08-06 | 1957-08-06 | Centre Nat Rech Scient | Apparatus for applying material by thermal vaporization in the manufacture of electrical resistors |
| US2845894A (en) * | 1953-03-04 | 1958-08-05 | Oran T Mcilvaine | Metallurgy |
| US2828225A (en) * | 1954-03-01 | 1958-03-25 | Sintercast Corp America | Methods of infiltrating high melting skeleton bodies |
| NL122356C (en) * | 1954-05-18 | 1900-01-01 | ||
| US2927004A (en) * | 1955-05-31 | 1960-03-01 | Bjorksten Res Lab Inc | Preparation of pure silicon or germanium from their alkyls |
| US2883269A (en) * | 1955-09-22 | 1959-04-21 | Du Pont | Production of elemental silicon |
| US2955466A (en) * | 1955-12-01 | 1960-10-11 | Robertshaw Fulton Controls Co | Test probe |
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| US2890139A (en) * | 1956-12-10 | 1959-06-09 | Shockley William | Semi-conductive material purification method and apparatus |
| US3081201A (en) * | 1957-05-15 | 1963-03-12 | Gen Electric | Method of forming an electric capacitor |
| NL246189A (en) * | 1958-12-09 | |||
| US2948635A (en) * | 1959-01-12 | 1960-08-09 | Gen Electric | Phosphor evaporation method and apparatus |
| DE1082239B (en) * | 1959-05-21 | 1960-05-25 | Licentia Gmbh | Process for the production of silicon rods |
| NL256255A (en) * | 1959-11-02 | |||
| US3098763A (en) * | 1961-05-29 | 1963-07-23 | Raytheon Co | Chemical reactor |
-
0
- NL NL246189D patent/NL246189A/xx unknown
- NL NL124906D patent/NL124906C/xx active
- NL NL295321D patent/NL295321A/xx unknown
-
1959
- 1959-12-08 US US858223A patent/US3134695A/en not_active Expired - Lifetime
-
1962
- 1962-08-22 DE DES81031A patent/DE1220391B/en active Pending
-
1963
- 1963-06-18 CH CH753263A patent/CH411804A/en unknown
- 1963-08-07 US US300586A patent/US3358638A/en not_active Expired - Lifetime
- 1963-08-21 SE SE9149/63A patent/SE309575B/xx unknown
- 1963-08-21 GB GB33063/63A patent/GB997336A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3134695A (en) | 1964-05-26 |
| DE1220391B (en) | 1966-07-07 |
| SE309575B (en) | 1969-03-31 |
| NL124906C (en) | |
| CH411804A (en) | 1966-04-30 |
| US3358638A (en) | 1967-12-19 |
| NL246189A (en) | |
| NL295321A (en) |
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