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PL382902A1 - Sposób i urządzenie do obróbki płaskich, kruchych podłoży - Google Patents

Sposób i urządzenie do obróbki płaskich, kruchych podłoży

Info

Publication number
PL382902A1
PL382902A1 PL382902A PL38290207A PL382902A1 PL 382902 A1 PL382902 A1 PL 382902A1 PL 382902 A PL382902 A PL 382902A PL 38290207 A PL38290207 A PL 38290207A PL 382902 A1 PL382902 A1 PL 382902A1
Authority
PL
Poland
Prior art keywords
breakeable
flat
processing unit
bases processing
bases
Prior art date
Application number
PL382902A
Other languages
English (en)
Inventor
Thomas Kosikowski
Original Assignee
Hollmuller Maschinenbau Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hollmuller Maschinenbau Gmbh filed Critical Hollmuller Maschinenbau Gmbh
Publication of PL382902A1 publication Critical patent/PL382902A1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Photovoltaic Devices (AREA)
PL382902A 2006-07-19 2007-07-11 Sposób i urządzenie do obróbki płaskich, kruchych podłoży PL382902A1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006033353A DE102006033353B4 (de) 2006-07-19 2006-07-19 Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten

Publications (1)

Publication Number Publication Date
PL382902A1 true PL382902A1 (pl) 2008-01-21

Family

ID=38830654

Family Applications (1)

Application Number Title Priority Date Filing Date
PL382902A PL382902A1 (pl) 2006-07-19 2007-07-11 Sposób i urządzenie do obróbki płaskich, kruchych podłoży

Country Status (5)

Country Link
JP (1) JP2008025030A (pl)
CN (1) CN101109095B (pl)
DE (1) DE102006033353B4 (pl)
PL (1) PL382902A1 (pl)
TW (1) TW200806822A (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1035265C2 (nl) 2008-04-07 2009-10-08 Meco Equip Eng Werkwijze en inrichting voor het elektrolytisch galvaniseren van niet-metallische glasachtige substraten.
DE102008026199B3 (de) * 2008-05-30 2009-10-08 Rena Gmbh Vorrichtung und Verfahren zur elektrischen Kontaktierung von ebenem Gut in Durchlaufanlagen
US7955873B2 (en) * 2009-03-31 2011-06-07 Infineon Technologies Ag Method of fabricating a semiconductor device
DE102009018360A1 (de) * 2009-04-23 2010-11-04 Rena Gmbh Verfahren und Vorrichtung zur elektrolytischen Behandlung von Solarzellen
DE102009022337A1 (de) * 2009-05-13 2010-11-18 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung eines Substrats
EP2473654B1 (en) * 2009-09-01 2013-10-30 Imec Method for electrochemical processing of non-flat samples
DE102013100805B4 (de) * 2013-01-28 2015-01-22 Hochschule Offenburg Nasschemische Behandlungsanlage zum elektrochemischen Beschichten von flachen Substraten
DE102013219886A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
DE102015121636A1 (de) * 2015-12-11 2017-06-14 Nexwafe Gmbh Vorrichtung und Verfahren zum einseitigen Ätzen einer Halbleiterschicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05140797A (ja) * 1991-11-18 1993-06-08 Sumitomo Metal Ind Ltd 連続電気めつき鋼帯の製造方法
JPH05320985A (ja) * 1992-05-27 1993-12-07 Kanai Hiroyuki 線状体の連続電気メッキにおける陰極の通電方法および通電用陰極体
US6153064A (en) * 1998-11-25 2000-11-28 Oliver Sales Company Apparatus for in line plating
JP3284496B2 (ja) * 2000-08-09 2002-05-20 株式会社荏原製作所 めっき装置及びめっき液除去方法
JP2002161395A (ja) * 2000-11-17 2002-06-04 Tokyo Electron Ltd 液処理装置及び液処理方法
DE10342512B3 (de) * 2003-09-12 2004-10-28 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von elektrisch gegeneinander isolierten, elektrisch leitfähigen Strukturen auf Oberflächen von bandförmigem Behandlungsgut

Also Published As

Publication number Publication date
DE102006033353B4 (de) 2010-11-18
CN101109095B (zh) 2011-03-16
CN101109095A (zh) 2008-01-23
DE102006033353A1 (de) 2008-01-24
JP2008025030A (ja) 2008-02-07
TW200806822A (en) 2008-02-01

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Legal Events

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