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PL3633729T3 - Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania - Google Patents

Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania

Info

Publication number
PL3633729T3
PL3633729T3 PL17911299.0T PL17911299T PL3633729T3 PL 3633729 T3 PL3633729 T3 PL 3633729T3 PL 17911299 T PL17911299 T PL 17911299T PL 3633729 T3 PL3633729 T3 PL 3633729T3
Authority
PL
Poland
Prior art keywords
micro
manufacturing
display panel
electroluminescent diodes
electroluminescent
Prior art date
Application number
PL17911299.0T
Other languages
English (en)
Inventor
Macai LU
Original Assignee
Shenzhen China Star Optoelectronics Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co., Ltd. filed Critical Shenzhen China Star Optoelectronics Technology Co., Ltd.
Publication of PL3633729T3 publication Critical patent/PL3633729T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
PL17911299.0T 2017-05-23 2017-06-20 Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania PL3633729T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710370731.9A CN106941108B (zh) 2017-05-23 2017-05-23 微发光二极管显示面板及其制作方法
PCT/CN2017/089253 WO2018214200A1 (zh) 2017-05-23 2017-06-20 微发光二极管显示面板及其制作方法

Publications (1)

Publication Number Publication Date
PL3633729T3 true PL3633729T3 (pl) 2022-09-19

Family

ID=59465082

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17911299.0T PL3633729T3 (pl) 2017-05-23 2017-06-20 Panel wyświetlający z mikro-diodami elektroluminescencyjnymi oraz sposób jego wytwarzania

Country Status (7)

Country Link
US (2) US10263138B2 (pl)
EP (1) EP3633729B1 (pl)
JP (1) JP6838247B2 (pl)
KR (1) KR102319307B1 (pl)
CN (1) CN106941108B (pl)
PL (1) PL3633729T3 (pl)
WO (1) WO2018214200A1 (pl)

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CN107393940B (zh) * 2017-09-06 2020-02-21 严光能 Led显示设备及其制造方法
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KR102422091B1 (ko) * 2017-12-07 2022-07-18 엘지디스플레이 주식회사 발광 소자 및 이를 이용한 표시 장치
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CN110828500A (zh) * 2018-08-07 2020-02-21 深圳Tcl新技术有限公司 一种led显示屏及其制作方法
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CN112018227A (zh) * 2019-05-31 2020-12-01 云谷（固安）科技有限公司 显示面板及显示装置
CN110289279B (zh) * 2019-06-04 2021-09-24 上海天马微电子有限公司 一种转移方法、阵列基板、其制作方法及显示装置
CN110189628B (zh) * 2019-06-28 2023-01-10 京东方科技集团股份有限公司 一种背光模组及显示装置
TWI750488B (zh) 2019-07-17 2021-12-21 錼創顯示科技股份有限公司 半導體結構與微型半導體顯示裝置
KR20210012516A (ko) 2019-07-25 2021-02-03 삼성전자주식회사 Led 패키지를 구비한 디스플레이 모듈 및 그 제조 방법
CN112310115B (zh) * 2019-07-26 2023-06-06 京东方科技集团股份有限公司 一种驱动背板、显示面板及显示装置
CN112802789B (zh) * 2019-11-14 2022-08-30 成都辰显光电有限公司 一种微元件的转移方法
CN111029360B (zh) * 2019-11-19 2022-06-07 深圳市华星光电半导体显示技术有限公司 micro-LED显示器件的制作方法
CN111128942B (zh) * 2019-12-04 2021-07-23 深圳市华星光电半导体显示技术有限公司 一种微发光二极管显示基板及其制备方法
CN111211213B (zh) * 2020-04-21 2020-09-04 南京中电熊猫平板显示科技有限公司 一种显示背板及其制造方法
CN111509015A (zh) * 2020-04-27 2020-08-07 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN113451494B (zh) * 2020-05-09 2022-09-27 重庆康佳光电技术研究院有限公司 一种led背板
CN111584507B (zh) * 2020-05-13 2023-05-02 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法、显示终端
CN113707788B (zh) * 2020-05-22 2022-07-22 重庆康佳光电技术研究院有限公司 背板结构及其制作方法、巨量转移方法、显示设备
KR20210148536A (ko) * 2020-05-29 2021-12-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN114093902A (zh) * 2020-08-25 2022-02-25 京东方科技集团股份有限公司 一种显示面板及其制作方法
CN112582519B (zh) * 2020-12-02 2022-03-11 苏州芯聚半导体有限公司 微发光二极管的转移方法及转移设备
KR20220088565A (ko) 2020-12-18 2022-06-28 삼성디스플레이 주식회사 표시 장치
CN113078249A (zh) * 2021-03-31 2021-07-06 錼创显示科技股份有限公司 微型发光元件结构及显示装置
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KR20220153162A (ko) * 2021-05-10 2022-11-18 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
CN113594198B (zh) * 2021-10-08 2021-12-28 罗化芯显示科技开发(江苏)有限公司 微发光二极管显示器件及其制作方法
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CN106941108A (zh) 2017-07-11
WO2018214200A1 (zh) 2018-11-29
EP3633729A4 (en) 2021-02-17
US20190181295A1 (en) 2019-06-13
JP6838247B2 (ja) 2021-03-03
CN106941108B (zh) 2019-09-17
US20180342691A1 (en) 2018-11-29
US10505084B2 (en) 2019-12-10
EP3633729A1 (en) 2020-04-08
US10263138B2 (en) 2019-04-16
KR102319307B1 (ko) 2021-11-03
JP2020521181A (ja) 2020-07-16
KR20200004893A (ko) 2020-01-14
EP3633729B1 (en) 2022-05-18

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