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PL334582A1 - Method of obtaining doped monocrystals as well as gallium nitride layers - Google Patents

Method of obtaining doped monocrystals as well as gallium nitride layers

Info

Publication number
PL334582A1
PL334582A1 PL33458299A PL33458299A PL334582A1 PL 334582 A1 PL334582 A1 PL 334582A1 PL 33458299 A PL33458299 A PL 33458299A PL 33458299 A PL33458299 A PL 33458299A PL 334582 A1 PL334582 A1 PL 334582A1
Authority
PL
Poland
Prior art keywords
monocrystals
well
gallium nitride
nitride layers
obtaining doped
Prior art date
Application number
PL33458299A
Other versions
PL190957B1 (en
Original Assignee
Politechnika Warszawska
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Warszawska filed Critical Politechnika Warszawska
Priority to PL334582A priority Critical patent/PL190957B1/en
Publication of PL334582A1 publication Critical patent/PL334582A1/en
Publication of PL190957B1 publication Critical patent/PL190957B1/en

Links

PL334582A 1999-07-23 1999-07-23 Method of obtaining doped monocrystals as well as gallium nitride layers PL190957B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL334582A PL190957B1 (en) 1999-07-23 1999-07-23 Method of obtaining doped monocrystals as well as gallium nitride layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL334582A PL190957B1 (en) 1999-07-23 1999-07-23 Method of obtaining doped monocrystals as well as gallium nitride layers

Publications (2)

Publication Number Publication Date
PL334582A1 true PL334582A1 (en) 2001-01-29
PL190957B1 PL190957B1 (en) 2006-02-28

Family

ID=20074811

Family Applications (1)

Application Number Title Priority Date Filing Date
PL334582A PL190957B1 (en) 1999-07-23 1999-07-23 Method of obtaining doped monocrystals as well as gallium nitride layers

Country Status (1)

Country Link
PL (1) PL190957B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016521667A (en) * 2013-05-30 2016-07-25 アンモノ ソエテ・アノニム Method for producing single-crystal gallium-containing nitride and single-crystal gallium-containing nitride obtained by the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016521667A (en) * 2013-05-30 2016-07-25 アンモノ ソエテ・アノニム Method for producing single-crystal gallium-containing nitride and single-crystal gallium-containing nitride obtained by the method

Also Published As

Publication number Publication date
PL190957B1 (en) 2006-02-28

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Legal Events

Date Code Title Description
LAPS Decisions on the lapse of the protection rights

Effective date: 20060723