PL1859477T3 - Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions - Google Patents
Nitride single crystal seeded growth in supercritical ammonia with alkali metal ionsInfo
- Publication number
- PL1859477T3 PL1859477T3 PL05814406T PL05814406T PL1859477T3 PL 1859477 T3 PL1859477 T3 PL 1859477T3 PL 05814406 T PL05814406 T PL 05814406T PL 05814406 T PL05814406 T PL 05814406T PL 1859477 T3 PL1859477 T3 PL 1859477T3
- Authority
- PL
- Poland
- Prior art keywords
- alkali metal
- single crystal
- metal ions
- nitride single
- supercritical ammonia
- Prior art date
Links
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title 2
- 229910001413 alkali metal ion Inorganic materials 0.000 title 1
- 229910021529 ammonia Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL371405A PL371405A1 (en) | 2004-11-26 | 2004-11-26 | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
| PCT/JP2005/022396 WO2006057463A1 (en) | 2004-11-26 | 2005-11-28 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ion |
| EP05814406.4A EP1859477B1 (en) | 2004-11-26 | 2005-11-28 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1859477T3 true PL1859477T3 (en) | 2019-08-30 |
Family
ID=36088253
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL371405A PL371405A1 (en) | 2004-11-26 | 2004-11-26 | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
| PL05814406T PL1859477T3 (en) | 2004-11-26 | 2005-11-28 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL371405A PL371405A1 (en) | 2004-11-26 | 2004-11-26 | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7905957B2 (en) |
| EP (1) | EP1859477B1 (en) |
| JP (1) | JP5291932B2 (en) |
| KR (1) | KR101419940B1 (en) |
| CN (1) | CN100565800C (en) |
| PL (2) | PL371405A1 (en) |
| WO (1) | WO2006057463A1 (en) |
Families Citing this family (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL219109B1 (en) * | 2001-06-06 | 2015-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| KR100679377B1 (en) * | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | Light Emitting Device Structure Using Nitride Bulk Monocrystalline Layer |
| JP4416648B2 (en) * | 2002-05-17 | 2010-02-17 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Method for manufacturing light emitting device |
| US20060138431A1 (en) * | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| EP1590509B1 (en) * | 2002-12-11 | 2014-02-12 | Ammono S.A. | Process for obtaining bulk monocrystalline gallium-containing nitride |
| TWI352434B (en) | 2002-12-11 | 2011-11-11 | Ammono Sp Zoo | A substrate for epitaxy and a method of preparing |
| US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| EP1769105B1 (en) | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
| PL371405A1 (en) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
| US9783910B2 (en) | 2006-04-07 | 2017-10-10 | Sixpoint Materials, Inc. | High pressure reactor and method of growing group III nitride crystals in supercritical ammonia |
| US8764903B2 (en) | 2009-05-05 | 2014-07-01 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
| US9803293B2 (en) | 2008-02-25 | 2017-10-31 | Sixpoint Materials, Inc. | Method for producing group III-nitride wafers and group III-nitride wafers |
| JP5044311B2 (en) * | 2006-09-13 | 2012-10-10 | 日本碍子株式会社 | Nitride single crystal growth method |
| US8458262B2 (en) * | 2006-12-22 | 2013-06-04 | At&T Mobility Ii Llc | Filtering spam messages across a communication network |
| KR101810613B1 (en) * | 2008-05-28 | 2017-12-20 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Hexagonal wurtzite single crystal |
| US20100075107A1 (en) * | 2008-05-28 | 2010-03-25 | The Regents Of The University Of California | Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate |
| TWI460322B (en) | 2008-06-04 | 2014-11-11 | 希波特公司 | Method for producing a Group III nitride crystal having improved crystallinity from an initial Group III nitrided species by an ammonia thermal growth method |
| EP2291551B1 (en) | 2008-06-04 | 2018-04-25 | SixPoint Materials, Inc. | High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal |
| US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| WO2009151642A1 (en) | 2008-06-12 | 2009-12-17 | Sixpoint Materials, Inc. | Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
| US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| US20120000415A1 (en) * | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
| US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| WO2010017148A1 (en) | 2008-08-04 | 2010-02-11 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
| US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
| JP2011530471A (en) * | 2008-08-07 | 2011-12-22 | ソラア インコーポレーテッド | Manufacturing method of gallium nitride bowl by large-scale ammonothermal method |
| US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
| US8323405B2 (en) * | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
| US8979999B2 (en) | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
| US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
| US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
| WO2010045567A1 (en) * | 2008-10-16 | 2010-04-22 | Sixpoint Materials, Inc. | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
| US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
| WO2010060034A1 (en) | 2008-11-24 | 2010-05-27 | Sixpoint Materials, Inc. | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
| US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| JP2012516572A (en) * | 2009-01-30 | 2012-07-19 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | SEED LAYER AND SEED LAYER MANUFACTURING METHOD |
| US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
| US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| WO2010140564A1 (en) * | 2009-06-01 | 2010-12-09 | 三菱化学株式会社 | Nitride semiconductor crystal and method for manufacturing same |
| EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
| JP5445105B2 (en) * | 2009-12-18 | 2014-03-19 | 三菱化学株式会社 | Method for producing group III nitride crystal and group III nitride crystal |
| US20120063987A1 (en) * | 2010-03-15 | 2012-03-15 | The Regents Of The University Of California | Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
| JP2013541491A (en) * | 2010-10-29 | 2013-11-14 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Ammonothermal growth of III-nitride crystals in species with at least two surfaces forming acute angles, right angles or obtuse angles with each other |
| CN101962804B (en) * | 2010-10-30 | 2012-05-02 | 北京大学 | GaN thick film self-separation method based on epitaxial material stress control |
| US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
| CN102644115A (en) * | 2011-02-22 | 2012-08-22 | Soraa有限公司 | Device and method for ammonothermally manufacturing gallium nitride crystal bar in large scale |
| KR20140053100A (en) | 2011-06-27 | 2014-05-07 | 식스포인트 머터리얼즈 인코퍼레이티드 | Synthesis method of transition metal nitride and transition metal nitride |
| WO2013010117A1 (en) * | 2011-07-13 | 2013-01-17 | The Regents Of The University Of California | Growing a group-iii nitride crystal using a flux growth and then using the group-iii nitride crystal as a seed for an ammonothermal re-growth |
| US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
| US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
| US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
| US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
| JP6106932B2 (en) * | 2012-03-19 | 2017-04-05 | 株式会社リコー | Group 13 nitride crystal and group 13 nitride crystal substrate |
| US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
| US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
| US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
| US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
| WO2014129544A1 (en) | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | Crystal of nitride of group-13 metal on periodic table, and method for producing same |
| US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
| CN104775156A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing structure suitable for directional solidification ingot casting |
| CN104818520A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal jointing structure for oriented solidification of cast ingots |
| CN104818528A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot |
| JP6474920B2 (en) * | 2015-06-25 | 2019-02-27 | シックスポイント マテリアルズ， インコーポレイテッド | Method of growing group III nitride crystals in high pressure reactor and supercritical ammonia |
| US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
| US10584031B2 (en) * | 2016-03-08 | 2020-03-10 | Sciocs Company Limited | Nitride crystal substrate |
| US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US12091771B2 (en) | 2020-02-11 | 2024-09-17 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| US11705322B2 (en) | 2020-02-11 | 2023-07-18 | Slt Technologies, Inc. | Group III nitride substrate, method of making, and method of use |
| US10995014B1 (en) | 2020-07-10 | 2021-05-04 | Northvolt Ab | Process for producing crystallized metal sulfates |
| TWI745110B (en) * | 2020-10-06 | 2021-11-01 | 環球晶圓股份有限公司 | Semiconductor substrate and method of manufacturing the same |
| JP7483669B2 (en) | 2020-11-02 | 2024-05-15 | エスエルティー テクノロジーズ インコーポレイテッド | Ultra-high purity mineralizers and improved methods for nitride crystal growth. |
| CN113135593B (en) * | 2021-05-25 | 2022-01-28 | 西南科技大学 | Method for preparing high-purity nano zirconium dioxide by hydrothermal-assisted sol-gel method |
Family Cites Families (121)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6153010A (en) | 1997-04-11 | 2000-11-28 | Nichia Chemical Industries Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| JPS6065798A (en) | 1983-09-19 | 1985-04-15 | Toyota Central Res & Dev Lab Inc | Growing of gallium nitride single crystal |
| CN1014535B (en) | 1988-12-30 | 1991-10-30 | 中国科学院物理研究所 | Method for growing potassium titanyl phosphate single crystal by using improved mineralizer |
| US5096860A (en) | 1990-05-25 | 1992-03-17 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
| KR920004181B1 (en) | 1990-09-13 | 1992-05-30 | 한국과학기술연구원 | Process for the production of cubic horon nitride |
| US5190738A (en) | 1991-06-17 | 1993-03-02 | Alcan International Limited | Process for producing unagglomerated single crystals of aluminum nitride |
| US5306662A (en) | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
| US5456204A (en) | 1993-05-28 | 1995-10-10 | Alfa Quartz, C.A. | Filtering flow guide for hydrothermal crystal growth |
| PL173917B1 (en) | 1993-08-10 | 1998-05-29 | Ct Badan Wysokocisnieniowych P | Method of obtaining a crystalline lamellar structure |
| JPH09502768A (en) | 1993-09-17 | 1997-03-18 | ブレント インターナショナル パブリック リミティド カンパニー | Pre-cleaning for phosphating metal surfaces |
| US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
| US5599520A (en) | 1994-11-03 | 1997-02-04 | Garces; Juan M. | Synthesis of crystalline porous solids in ammonia |
| US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
| US5679965A (en) | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
| JP3728332B2 (en) | 1995-04-24 | 2005-12-21 | シャープ株式会社 | Compound semiconductor light emitting device |
| GB2310083B (en) | 1995-08-31 | 1999-07-28 | Toshiba Kk | Blue light emitting element and method of manufacturing same |
| US6377596B1 (en) | 1995-09-18 | 2002-04-23 | Hitachi, Ltd. | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices |
| JP3179346B2 (en) | 1996-08-27 | 2001-06-25 | 松下電子工業株式会社 | Method for producing gallium nitride crystal |
| JPH1084161A (en) | 1996-09-06 | 1998-03-31 | Sumitomo Electric Ind Ltd | Semiconductor laser and method of manufacturing the same |
| US6031858A (en) | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
| US6542526B1 (en) | 1996-10-30 | 2003-04-01 | Hitachi, Ltd. | Optical information processor and semiconductor light emitting device suitable for the same |
| JPH111399A (en) | 1996-12-05 | 1999-01-06 | Lg Electron Inc | Method for manufacturing gallium nitride semiconductor single crystal substrate and gallium nitride diode using the substrate |
| US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| WO1998031055A1 (en) | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US5868837A (en) | 1997-01-17 | 1999-02-09 | Cornell Research Foundation, Inc. | Low temperature method of preparing GaN single crystals |
| PL184902B1 (en) | 1997-04-04 | 2003-01-31 | Centrum Badan Wysokocisnieniowych Pan | Method of removing roughness and strongly defective areas from surface of gan and ga1-x-y-alxinyn crystals and epitaxial layers |
| JP3491492B2 (en) | 1997-04-09 | 2004-01-26 | 松下電器産業株式会社 | Method for producing gallium nitride crystal |
| US5888389A (en) | 1997-04-24 | 1999-03-30 | Hydroprocessing, L.L.C. | Apparatus for oxidizing undigested wastewater sludges |
| PL183687B1 (en) | 1997-06-06 | 2002-06-28 | Ct Badan | Method of obtaining semiconductive compounds of a3-b5 group and electric conductivity of p and n type |
| GB2333521B (en) | 1997-06-11 | 2000-04-26 | Hitachi Cable | Nitride crystal growth method |
| US6270569B1 (en) | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
| TW519551B (en) | 1997-06-11 | 2003-02-01 | Hitachi Cable | Methods of fabricating nitride crystals and nitride crystals obtained therefrom |
| US6593589B1 (en) | 1998-01-30 | 2003-07-15 | The University Of New Mexico | Semiconductor nitride structures |
| US6249534B1 (en) | 1998-04-06 | 2001-06-19 | Matsushita Electronics Corporation | Nitride semiconductor laser device |
| TW428331B (en) | 1998-05-28 | 2001-04-01 | Sumitomo Electric Industries | Gallium nitride single crystal substrate and method of producing the same |
| JPH11340576A (en) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor devices |
| JP4005701B2 (en) | 1998-06-24 | 2007-11-14 | シャープ株式会社 | Method of forming nitrogen compound semiconductor film and nitrogen compound semiconductor element |
| TW413956B (en) | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
| US6335546B1 (en) | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
| JP2000091637A (en) | 1998-09-07 | 2000-03-31 | Rohm Co Ltd | Manufacturing method of semiconductor light emitting device |
| US6423984B1 (en) | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
| US6252261B1 (en) | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| US6150674A (en) | 1998-11-06 | 2000-11-21 | Matsushita Electronics Corporation | Semiconductor device having Alx Ga1-x N (0<x<1) substrate |
| TW498102B (en) | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
| US6372041B1 (en) | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
| US20020096674A1 (en) | 1999-01-08 | 2002-07-25 | Cho Hak Dong | Nucleation layer growth and lift-up of process for GaN wafer |
| JP2000216494A (en) | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | Semiconductor light emitting element and its manufacture |
| EP1024524A2 (en) | 1999-01-27 | 2000-08-02 | Matsushita Electric Industrial Co., Ltd. | Deposition of dielectric layers using supercritical CO2 |
| US6177057B1 (en) | 1999-02-09 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for preparing bulk cubic gallium nitride |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| JP3957918B2 (en) | 1999-05-17 | 2007-08-15 | 独立行政法人科学技術振興機構 | Method for growing gallium nitride single crystal |
| US6592663B1 (en) | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
| JP4329229B2 (en) | 1999-06-30 | 2009-09-09 | 住友電気工業株式会社 | III-V nitride semiconductor growth method and vapor phase growth apparatus |
| KR100381742B1 (en) | 1999-06-30 | 2003-04-26 | 스미토모덴키고교가부시키가이샤 | Growing method of III-V group nitride semiconductor and vapor phase growing apparatus |
| JP3968920B2 (en) | 1999-08-10 | 2007-08-29 | 双葉電子工業株式会社 | Phosphor |
| JP4646359B2 (en) | 1999-09-09 | 2011-03-09 | シャープ株式会社 | Manufacturing method of nitride semiconductor light emitting device |
| JP2001085737A (en) | 1999-09-10 | 2001-03-30 | Sharp Corp | Nitride semiconductor light emitting device |
| US6265322B1 (en) | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
| CN1113988C (en) | 1999-09-29 | 2003-07-09 | 中国科学院物理研究所 | Hydrothermal growth method of gallium nitride single crystal |
| US6398867B1 (en) | 1999-10-06 | 2002-06-04 | General Electric Company | Crystalline gallium nitride and method for forming crystalline gallium nitride |
| EP1104031B1 (en) | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
| US6653663B2 (en) | 1999-12-06 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor device |
| JP2001168385A (en) | 1999-12-06 | 2001-06-22 | Toyoda Gosei Co Ltd | Group III nitride compound semiconductor device and group III nitride compound semiconductor light emitting device |
| JP2001185718A (en) | 1999-12-24 | 2001-07-06 | Hitachi Cable Ltd | Manufacturing method of epitaxial wafer for high electron mobility transistor using gallium nitride based compound semiconductor |
| US7315599B1 (en) | 1999-12-29 | 2008-01-01 | Intel Corporation | Skew correction circuit |
| US6355497B1 (en) | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
| JP3335974B2 (en) | 2000-01-24 | 2002-10-21 | 星和電機株式会社 | Gallium nitride based semiconductor light emitting device and method of manufacturing the same |
| US20010015437A1 (en) | 2000-01-25 | 2001-08-23 | Hirotatsu Ishii | GaN field-effect transistor, inverter device, and production processes therefor |
| JP4429459B2 (en) | 2000-03-03 | 2010-03-10 | 古河電気工業株式会社 | Method for producing high-resistance GaN crystal layer |
| US6596079B1 (en) | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
| US6447604B1 (en) | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
| JP3946427B2 (en) | 2000-03-29 | 2007-07-18 | 株式会社東芝 | Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate |
| WO2001080311A1 (en) | 2000-04-17 | 2001-10-25 | Virginia Commonwealth University | Defect reduction in gan and related materials |
| JP2001339121A (en) | 2000-05-29 | 2001-12-07 | Sharp Corp | Nitride semiconductor light emitting device and optical device including the same |
| US6693935B2 (en) | 2000-06-20 | 2004-02-17 | Sony Corporation | Semiconductor laser |
| JP2002016285A (en) | 2000-06-27 | 2002-01-18 | National Institute Of Advanced Industrial & Technology | Semiconductor light emitting device |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| JP3968968B2 (en) | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | Manufacturing method of single crystal GaN substrate |
| US6749819B2 (en) | 2000-07-28 | 2004-06-15 | Japan Pionics Co., Ltd. | Process for purifying ammonia |
| JP4154558B2 (en) | 2000-09-01 | 2008-09-24 | 日本電気株式会社 | Semiconductor device |
| JP4416297B2 (en) | 2000-09-08 | 2010-02-17 | シャープ株式会社 | Nitride semiconductor light emitting element, and light emitting device and optical pickup device using the same |
| US6858882B2 (en) | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
| JP2002094189A (en) | 2000-09-14 | 2002-03-29 | Sharp Corp | Nitride semiconductor laser device and optical device using the same |
| JP2002134416A (en) | 2000-10-19 | 2002-05-10 | Ricoh Co Ltd | Crystal growth method and manufacturing method of p-type group III nitride, and semiconductor device |
| US6936488B2 (en) | 2000-10-23 | 2005-08-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
| US7053413B2 (en) | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
| JP4063520B2 (en) | 2000-11-30 | 2008-03-19 | 日本碍子株式会社 | Semiconductor light emitting device |
| EP1346085B1 (en) | 2000-11-30 | 2011-10-12 | North Carolina State University | Method for producing group iii metal nitride based materials |
| JP4003413B2 (en) | 2000-12-11 | 2007-11-07 | 日亜化学工業株式会社 | Method for producing group 13 nitride crystal |
| JP3785566B2 (en) | 2001-03-19 | 2006-06-14 | 株式会社日鉱マテリアルズ | GaN compound semiconductor crystal manufacturing method |
| US6806508B2 (en) | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
| JP2004262757A (en) * | 2001-04-24 | 2004-09-24 | Sony Corp | Nitride semiconductor, semiconductor device, and method of manufacturing these |
| PL219109B1 (en) | 2001-06-06 | 2015-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| US6734530B2 (en) | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
| PL207400B1 (en) | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Method of and apparatus for obtaining voluminous, gallium containing, monocrystalline nitride |
| WO2002101202A1 (en) | 2001-06-08 | 2002-12-19 | Roger Wayne Miller | Rotary drive engine |
| US6488767B1 (en) | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| US6562466B2 (en) | 2001-07-02 | 2003-05-13 | Essilor International Compagnie Generale D'optique | Process for transferring a coating onto a surface of a lens blank |
| KR100679377B1 (en) | 2001-10-26 | 2007-02-05 | 암모노 에스피. 제트오. 오. | Light Emitting Device Structure Using Nitride Bulk Monocrystalline Layer |
| IL161420A0 (en) | 2001-10-26 | 2004-09-27 | Ammono Sp Zoo | Substrate for epitaxy |
| US6949140B2 (en) | 2001-12-05 | 2005-09-27 | Ricoh Company, Ltd. | Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device |
| US7097707B2 (en) | 2001-12-31 | 2006-08-29 | Cree, Inc. | GaN boule grown from liquid melt using GaN seed wafers |
| JP4513264B2 (en) * | 2002-02-22 | 2010-07-28 | 三菱化学株式会社 | Method for producing nitride single crystal |
| US20030209191A1 (en) | 2002-05-13 | 2003-11-13 | Purdy Andrew P. | Ammonothermal process for bulk synthesis and growth of cubic GaN |
| JP4416648B2 (en) | 2002-05-17 | 2010-02-17 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Method for manufacturing light emitting device |
| US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
| TWI274735B (en) | 2002-05-17 | 2007-03-01 | Ammono Sp Zoo | Bulk single crystal production facility employing supercritical ammonia |
| CN100550543C (en) | 2002-06-26 | 2009-10-14 | 阿莫诺公司 | Nitride semiconductor laser device and manufacturing method thereof |
| JP4663319B2 (en) * | 2002-06-26 | 2011-04-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Method for producing gallium-containing nitride bulk single crystal |
| US7099073B2 (en) | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
| TWI352434B (en) | 2002-12-11 | 2011-11-11 | Ammono Sp Zoo | A substrate for epitaxy and a method of preparing |
| AU2003285766A1 (en) | 2002-12-11 | 2004-06-30 | Ammono Sp. Z O.O. | Process for obtaining bulk-crystalline gallium-containing nitride |
| EP1590509B1 (en) * | 2002-12-11 | 2014-02-12 | Ammono S.A. | Process for obtaining bulk monocrystalline gallium-containing nitride |
| WO2004090202A1 (en) * | 2003-04-03 | 2004-10-21 | Mitsubishi Chemical Corporation | Zinc oxide single crystal |
| EP1769105B1 (en) | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
| KR100848379B1 (en) | 2004-06-11 | 2008-07-25 | 암모노 에스피. 제트오. 오. | High electron mobility transistor composed of VIIIII element nitride layer and its manufacturing method |
| PL371405A1 (en) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Method for manufacture of volumetric monocrystals by their growth on crystal nucleus |
| US7704324B2 (en) | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
| JP2009533303A (en) | 2006-04-07 | 2009-09-17 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Growth of large surface area gallium nitride crystals. |
| EP2092093A4 (en) | 2006-10-25 | 2017-06-14 | The Regents of The University of California | Method for growing group iii-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group iii-nitride crystals grown thereby |
| TWI480435B (en) | 2007-09-19 | 2015-04-11 | Univ California | Gallium nitride bulk crystals and their growth method |
-
2004
- 2004-11-26 PL PL371405A patent/PL371405A1/en unknown
-
2005
- 2005-11-28 EP EP05814406.4A patent/EP1859477B1/en not_active Expired - Lifetime
- 2005-11-28 PL PL05814406T patent/PL1859477T3/en unknown
- 2005-11-28 CN CNB200580040008XA patent/CN100565800C/en not_active Expired - Fee Related
- 2005-11-28 KR KR1020077014483A patent/KR101419940B1/en not_active Expired - Fee Related
- 2005-11-28 JP JP2007525083A patent/JP5291932B2/en not_active Expired - Lifetime
- 2005-11-28 WO PCT/JP2005/022396 patent/WO2006057463A1/en not_active Ceased
- 2005-11-28 US US11/791,716 patent/US7905957B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| PL371405A1 (en) | 2006-05-29 |
| US7905957B2 (en) | 2011-03-15 |
| WO2006057463A1 (en) | 2006-06-01 |
| KR20070086647A (en) | 2007-08-27 |
| US20080156254A1 (en) | 2008-07-03 |
| EP1859477B1 (en) | 2019-03-20 |
| EP1859477A1 (en) | 2007-11-28 |
| JP2008521737A (en) | 2008-06-26 |
| JP5291932B2 (en) | 2013-09-18 |
| CN101061570A (en) | 2007-10-24 |
| CN100565800C (en) | 2009-12-02 |
| KR101419940B1 (en) | 2014-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| PL1859477T3 (en) | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions | |
| GB2431948B (en) | Thermally stable polycrystalline ultra-hard constructions | |
| EP1968598A4 (en) | Pyrimidine-2,4-diamines and their uses | |
| AU157195S (en) | Watch | |
| SG117623A1 (en) | Refrigerator | |
| EP1919492A4 (en) | Growth hormone secretagogues | |
| EP1704033A4 (en) | High pressure crystal growth apparatuses and associated methods | |
| TWI367859B (en) | Single crystalline diamond and producing method thereof | |
| IL209568A0 (en) | Pyrimidine compound crystal or amorphous form and process for producing the same | |
| EP1826515A4 (en) | Refrigerator | |
| GB0808945D0 (en) | Technique for thread communication and synchronization | |
| EP1778585A4 (en) | Improved ammonia plant | |
| EG24339A (en) | Pseudoisothermal ammonia process | |
| GB0400713D0 (en) | Freezing needle | |
| GB2433633B (en) | RF protocol with variable period wake-up | |
| GB2418978B (en) | Refrigerator | |
| GB2426180B (en) | Wristband | |
| GB2405238B (en) | Clock adjustment | |
| GB2430483B (en) | Refrigerator | |
| GB0410498D0 (en) | Crystal | |
| GB2431930B (en) | Fluorescent nitrides comprising Al, Ga or In | |
| GB0400125D0 (en) | Angle face watch | |
| HU2940U (en) | Refrigerator | |
| AU300649S (en) | Refrigerator | |
| AU302671S (en) | Refrigerator |