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GB2333521B - Nitride crystal growth method - Google Patents

Nitride crystal growth method

Info

Publication number
GB2333521B
GB2333521B GB9909959A GB9909959A GB2333521B GB 2333521 B GB2333521 B GB 2333521B GB 9909959 A GB9909959 A GB 9909959A GB 9909959 A GB9909959 A GB 9909959A GB 2333521 B GB2333521 B GB 2333521B
Authority
GB
United Kingdom
Prior art keywords
crystal growth
growth method
nitride crystal
nitride
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9909959A
Other versions
GB9909959D0 (en
GB2333521A (en
Inventor
Masatomo Shibata
Takashi Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22162897A external-priority patent/JP3622440B2/en
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority claimed from GB9812653A external-priority patent/GB2326160B/en
Publication of GB9909959D0 publication Critical patent/GB9909959D0/en
Publication of GB2333521A publication Critical patent/GB2333521A/en
Application granted granted Critical
Publication of GB2333521B publication Critical patent/GB2333521B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0722—Preparation by direct nitridation of aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/067—Aluminium nitrides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9909959A 1997-06-11 1998-06-11 Nitride crystal growth method Expired - Fee Related GB2333521B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15375597 1997-06-11
JP22162897A JP3622440B2 (en) 1997-08-18 1997-08-18 Method for growing nitride crystal and method for growing GaN crystal
JP29256197 1997-10-24
GB9812653A GB2326160B (en) 1997-06-11 1998-06-11 Nitride crystal fabricating method

Publications (3)

Publication Number Publication Date
GB9909959D0 GB9909959D0 (en) 1999-06-30
GB2333521A GB2333521A (en) 1999-07-28
GB2333521B true GB2333521B (en) 2000-04-26

Family

ID=27451799

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9909959A Expired - Fee Related GB2333521B (en) 1997-06-11 1998-06-11 Nitride crystal growth method
GB9909954A Expired - Fee Related GB2333520B (en) 1997-06-11 1998-06-11 GaN crystal growth method

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9909954A Expired - Fee Related GB2333520B (en) 1997-06-11 1998-06-11 GaN crystal growth method

Country Status (1)

Country Link
GB (2) GB2333521B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750355B2 (en) 2001-10-26 2010-07-06 Ammono Sp. Z O.O. Light emitting element structure using nitride bulk single crystal layer
US7811380B2 (en) 2002-12-11 2010-10-12 Ammono Sp. Z O.O. Process for obtaining bulk mono-crystalline gallium-containing nitride
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3119306B1 (en) * 1999-08-02 2000-12-18 住友電気工業株式会社 Crystal growth container and crystal growth method
PL219109B1 (en) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
PL207400B1 (en) 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Method of and apparatus for obtaining voluminous, gallium containing, monocrystalline nitride
IL161420A0 (en) 2001-10-26 2004-09-27 Ammono Sp Zoo Substrate for epitaxy
US20030140845A1 (en) * 2002-01-31 2003-07-31 General Electric Company Pressure vessel
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
TWI274735B (en) 2002-05-17 2007-03-01 Ammono Sp Zoo Bulk single crystal production facility employing supercritical ammonia
JP4416648B2 (en) 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン Method for manufacturing light emitting device
TWI352434B (en) 2002-12-11 2011-11-11 Ammono Sp Zoo A substrate for epitaxy and a method of preparing
EP1769105B1 (en) 2004-06-11 2014-05-14 Ammono S.A. Bulk mono-crystalline gallium nitride and method for its preparation
PL371405A1 (en) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
KR102886179B1 (en) * 2022-02-24 2025-11-14 고쿠리츠다이가쿠호진 도호쿠다이가쿠 Method for manufacturing AlN single crystal, AlN single crystal, and AlN single crystal manufacturing apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938164B2 (en) * 1981-03-06 1984-09-14 科学技術庁無機材質研究所長 Manufacturing method of cubic boron nitride
JPS60122797A (en) * 1983-12-07 1985-07-01 Toshiba Corp Production of aluminum nitride single crystal
US4875967A (en) * 1987-05-01 1989-10-24 National Institute For Research In Inorganic Materials Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750355B2 (en) 2001-10-26 2010-07-06 Ammono Sp. Z O.O. Light emitting element structure using nitride bulk single crystal layer
US7935550B2 (en) 2001-10-26 2011-05-03 Ammono Sp. Z O.O. Method of forming light-emitting device using nitride bulk single crystal layer
US7871843B2 (en) 2002-05-17 2011-01-18 Ammono. Sp. z o.o. Method of preparing light emitting device
US7811380B2 (en) 2002-12-11 2010-10-12 Ammono Sp. Z O.O. Process for obtaining bulk mono-crystalline gallium-containing nitride

Also Published As

Publication number Publication date
GB9909954D0 (en) 1999-06-30
GB9909959D0 (en) 1999-06-30
GB2333520A (en) 1999-07-28
GB2333521A (en) 1999-07-28
GB2333520B (en) 2000-04-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050611