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NO20065496L - Digel for krystallisering av silisium - Google Patents

Digel for krystallisering av silisium

Info

Publication number
NO20065496L
NO20065496L NO20065496A NO20065496A NO20065496L NO 20065496 L NO20065496 L NO 20065496L NO 20065496 A NO20065496 A NO 20065496A NO 20065496 A NO20065496 A NO 20065496A NO 20065496 L NO20065496 L NO 20065496L
Authority
NO
Norway
Prior art keywords
crucible
silicon
weight
crystallization
coating
Prior art date
Application number
NO20065496A
Other languages
English (en)
Other versions
NO339723B1 (no
Inventor
Gilbert Rancoule
Original Assignee
Vesuvius Crucible Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vesuvius Crucible Co filed Critical Vesuvius Crucible Co
Publication of NO20065496L publication Critical patent/NO20065496L/no
Publication of NO339723B1 publication Critical patent/NO339723B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Silicon Compounds (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Mold Materials And Core Materials (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Oppfinnelsen angår en digel for krystallisering av silisium, foruten fremstilling og anvendelse av frigjøringsbelegg for digler benyttet for smeltede materialer som skal bringes til å størkne i digelen og deretter fjernes som støpeblokker. Mer spesielt dreier det seg om frigjøringsbelegg for digler benyttet ved størkning av polykrystallinsk silisium. Siktemålet var å tilveiebringe en digel som ikke krever fremstilling av et meget tykt belegg i sluttbrukerens anlegg, som lar seg fremstille hurtigere og billigere, og som viser seg å ha et sterkere belegg med forbedret vedhefting til veggene. Det har nå vist seg at disse problemer kan løses med en digel for krystallisering av silisium, omfattende (a) et basislegeme omfattende en bunnflate og sidevegger som definerer et innvendig volum, (b) et mellomlag omfattende 50-100 vekt% silika ved overflaten av sideveggene som vender mot det innvendige volum, og (c) et overflatelag omfattende 50-100 vekt% silisiumnitrid, inntil 50 vekt% silisiumdioksid og inntil 20 vekt% silisium på toppen av mellomlaget.
NO20065496A 2004-04-29 2006-11-28 Digel for krystallisering av silisium NO339723B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04447105 2004-04-29
PCT/BE2005/000055 WO2005106084A1 (en) 2004-04-29 2005-04-26 Crucible for the crystallization of silicon

Publications (2)

Publication Number Publication Date
NO20065496L true NO20065496L (no) 2006-11-28
NO339723B1 NO339723B1 (no) 2017-01-23

Family

ID=34933027

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20065496A NO339723B1 (no) 2004-04-29 2006-11-28 Digel for krystallisering av silisium

Country Status (15)

Country Link
US (1) US7378128B2 (no)
EP (1) EP1745164B1 (no)
JP (1) JP5059602B2 (no)
KR (1) KR101213928B1 (no)
CN (1) CN1946881B (no)
AT (1) ATE398196T1 (no)
DE (1) DE602005007484D1 (no)
ES (1) ES2306141T3 (no)
MX (1) MXPA06012509A (no)
NO (1) NO339723B1 (no)
PL (1) PL1745164T3 (no)
RU (1) RU2355832C2 (no)
TW (1) TWI361174B (no)
UA (1) UA87842C2 (no)
WO (1) WO2005106084A1 (no)

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EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
JP5153636B2 (ja) * 2006-08-30 2013-02-27 京セラ株式会社 シリコンインゴット製造用鋳型の形成方法、太陽電池素子用基板の製造方法、および太陽電池素子の製造方法
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JP5148783B1 (ja) * 2011-11-14 2013-02-20 シャープ株式会社 複合材の製造方法およびシリコンの精製装置
WO2013073204A1 (ja) * 2011-11-14 2013-05-23 シャープ株式会社 複合材、複合材の製造方法およびシリコンの精製装置
CN103506263B (zh) * 2011-12-30 2015-07-29 英利能源（中国）有限公司 多晶硅坩埚喷涂免烘干的方法及氮化硅涂层
CN103183478B (zh) * 2011-12-31 2015-07-08 浙江昱辉阳光能源有限公司 氮化硅坩埚涂层及其制备方法
JP2013227171A (ja) * 2012-04-26 2013-11-07 Kyodo Fine Ceramics Co Ltd 単結晶シリコン育成用るつぼ、単結晶シリコン育成用るつぼの製造方法、及び単結晶シリコンの製造方法
WO2014004496A1 (en) * 2012-06-25 2014-01-03 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
CN103774209B (zh) * 2012-10-26 2016-06-15 阿特斯(中国)投资有限公司 硅铸锭用坩埚及其涂层制备方法
JP6096653B2 (ja) * 2012-12-28 2017-03-15 京セラ株式会社 シリコン鋳造用鋳型およびその製造方法
RU2514354C1 (ru) * 2013-02-27 2014-04-27 Общество с ограниченной ответственностью "Обнинский Внедренческий Центр "Перспективные технологии" Способ получения изделий из пористых керамических и волокнистых материалов на основе кварцевого стекла
JP6355096B2 (ja) * 2013-07-31 2018-07-11 国立大学法人山口大学 撥液性複合部材
CN103420618A (zh) * 2013-09-05 2013-12-04 蠡县英利新能源有限公司 太阳能电池坩埚及其喷涂方法
FR3010715B1 (fr) * 2013-09-16 2017-03-10 Commissariat Energie Atomique Substrat a revetement peu permeable pour solidification de silicium
FR3010716B1 (fr) 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
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JP6567987B2 (ja) * 2016-02-24 2019-08-28 クアーズテック株式会社 石英ガラスルツボの製造方法
GB2550415A (en) * 2016-05-18 2017-11-22 Rec Solar Pte Ltd Silicon ingot growth crucible with patterned protrusion structured layer
US10450669B2 (en) 2016-07-29 2019-10-22 Auo Crystal Corporation Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
EP3566245B1 (en) 2017-11-21 2021-03-17 Lam Research Corporation Bottom and middle edge rings
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
CN110000708A (zh) * 2019-04-15 2019-07-12 徐州协鑫太阳能材料有限公司 一种改造坩埚粗糙度的方法
CN109955154A (zh) * 2019-04-15 2019-07-02 徐州协鑫太阳能材料有限公司 一种坩埚表面粗糙度的加工方法
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KR102677112B1 (ko) * 2022-05-09 2024-06-20 (주)셀릭 저저항 대구경 잉곳 제조장치

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Also Published As

Publication number Publication date
MXPA06012509A (es) 2007-01-31
EP1745164B1 (en) 2008-06-11
TW200540130A (en) 2005-12-16
EP1745164A1 (en) 2007-01-24
JP5059602B2 (ja) 2012-10-24
NO339723B1 (no) 2017-01-23
JP2007534590A (ja) 2007-11-29
PL1745164T3 (pl) 2008-11-28
CN1946881B (zh) 2010-06-09
CN1946881A (zh) 2007-04-11
UA87842C2 (uk) 2009-08-25
US7378128B2 (en) 2008-05-27
ES2306141T3 (es) 2008-11-01
US20070240635A1 (en) 2007-10-18
KR101213928B1 (ko) 2012-12-18
WO2005106084A1 (en) 2005-11-10
TWI361174B (en) 2012-04-01
RU2355832C2 (ru) 2009-05-20
KR20070004901A (ko) 2007-01-09
ATE398196T1 (de) 2008-07-15
DE602005007484D1 (de) 2008-07-24
RU2006140280A (ru) 2008-05-27

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Legal Events

Date Code Title Description
CHAD Change of the owner's name or address (par. 44 patent law, par. patentforskriften)

Owner name: VESUVIUS USA CORPORATION, US

MM1K Lapsed by not paying the annual fees