JPS57188498A - Quartz crucible for pulling up silicon single crystal - Google Patents
Quartz crucible for pulling up silicon single crystalInfo
- Publication number
- JPS57188498A JPS57188498A JP7233581A JP7233581A JPS57188498A JP S57188498 A JPS57188498 A JP S57188498A JP 7233581 A JP7233581 A JP 7233581A JP 7233581 A JP7233581 A JP 7233581A JP S57188498 A JPS57188498 A JP S57188498A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film
- crucible
- pulling
- quartz crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 239000010453 quartz Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain an Si single crystal with few defects in the crystal structure in a high yield by coating the surface of a quartz crucible used in a device for pulling up an si single crystal with a silicon nitride film to prevent chips of quartz glass from peeling off the crucible.
CONSTITUTION: A quartz crucible 12 for pulling up an Si single crystal is manufactured by coating the inner wall 2a of an ordinary quartz crucible 2 with a high purity dense silicon nitride film 19 by vapor deposition. By regulating the thickness of the film 19 to ≤0.5μm, the amount of suspended foreign matter is reduced when an Si single crystal is pulled up, and the single crystal yield is enhanced considerably. The effect of the film 19 is independent to the crystalline or amorphous state. The crucible 2 is mounted on a support stand 18 in a quartz reaction tube 14, and the deposition of the film 19 is carried out while rotating the stand 18 so as to make the film 19 uniform. The deposition is carried out at 950W1,350°C under low pressure in an atmosphere contg. SiCl4, H2 and NH3.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7233581A JPS57188498A (en) | 1981-05-15 | 1981-05-15 | Quartz crucible for pulling up silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7233581A JPS57188498A (en) | 1981-05-15 | 1981-05-15 | Quartz crucible for pulling up silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57188498A true JPS57188498A (en) | 1982-11-19 |
Family
ID=13486312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7233581A Pending JPS57188498A (en) | 1981-05-15 | 1981-05-15 | Quartz crucible for pulling up silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188498A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161991A (en) * | 1982-03-17 | 1983-09-26 | Toshiba Corp | Production of molding of semiconductor blank material |
| JPS59217700A (en) * | 1983-05-20 | 1984-12-07 | Sumitomo Electric Ind Ltd | Compound semiconductor manufacturing components and their manufacturing method |
| JPS59227800A (en) * | 1983-05-20 | 1984-12-21 | Sumitomo Electric Ind Ltd | Compound semiconductor manufacturing parts |
| JPS6143274U (en) * | 1984-08-20 | 1986-03-20 | 科学技術庁無機材質研究所長 | Single crystal growth equipment |
| JPH01112450U (en) * | 1988-01-22 | 1989-07-28 | ||
| KR20030050334A (en) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | Apparatus of growing a single silicon ingot |
| KR20030052467A (en) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | Graphite Crucible |
| JP2006124230A (en) * | 2004-10-28 | 2006-05-18 | Tosoh Quartz Corp | Vessel for melting silicon |
| JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
-
1981
- 1981-05-15 JP JP7233581A patent/JPS57188498A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58161991A (en) * | 1982-03-17 | 1983-09-26 | Toshiba Corp | Production of molding of semiconductor blank material |
| JPS59217700A (en) * | 1983-05-20 | 1984-12-07 | Sumitomo Electric Ind Ltd | Compound semiconductor manufacturing components and their manufacturing method |
| JPS59227800A (en) * | 1983-05-20 | 1984-12-21 | Sumitomo Electric Ind Ltd | Compound semiconductor manufacturing parts |
| JPS6143274U (en) * | 1984-08-20 | 1986-03-20 | 科学技術庁無機材質研究所長 | Single crystal growth equipment |
| JPH01112450U (en) * | 1988-01-22 | 1989-07-28 | ||
| KR20030050334A (en) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | Apparatus of growing a single silicon ingot |
| KR20030052467A (en) * | 2001-12-21 | 2003-06-27 | 주식회사 실트론 | Graphite Crucible |
| JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
| JP2006124230A (en) * | 2004-10-28 | 2006-05-18 | Tosoh Quartz Corp | Vessel for melting silicon |
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