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NO20032188D0 - En selvinnstillende ikke-volatil minnecelle - Google Patents

En selvinnstillende ikke-volatil minnecelle

Info

Publication number
NO20032188D0
NO20032188D0 NO20032188A NO20032188A NO20032188D0 NO 20032188 D0 NO20032188 D0 NO 20032188D0 NO 20032188 A NO20032188 A NO 20032188A NO 20032188 A NO20032188 A NO 20032188A NO 20032188 D0 NO20032188 D0 NO 20032188D0
Authority
NO
Norway
Prior art keywords
self
memory cell
volatile memory
adjusting non
adjusting
Prior art date
Application number
NO20032188A
Other languages
English (en)
Other versions
NO20032188L (no
Inventor
Bohumil Lojek
Alan L Renninger
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of NO20032188D0 publication Critical patent/NO20032188D0/no
Publication of NO20032188L publication Critical patent/NO20032188L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
NO20032188A 2000-11-30 2003-05-14 En selvinnstillende ikke-volatil minnecelle NO20032188L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/727,571 US6479351B1 (en) 2000-11-30 2000-11-30 Method of fabricating a self-aligned non-volatile memory cell
PCT/US2001/032157 WO2002045176A1 (en) 2000-11-30 2001-10-15 Self-aligned non-volatile memory cell

Publications (2)

Publication Number Publication Date
NO20032188D0 true NO20032188D0 (no) 2003-05-14
NO20032188L NO20032188L (no) 2003-07-17

Family

ID=24923175

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20032188A NO20032188L (no) 2000-11-30 2003-05-14 En selvinnstillende ikke-volatil minnecelle

Country Status (11)

Country Link
US (3) US6479351B1 (no)
EP (1) EP1340264A1 (no)
JP (1) JP2004519094A (no)
KR (1) KR20030057560A (no)
CN (1) CN1220274C (no)
AU (1) AU2002214585A1 (no)
CA (1) CA2427232A1 (no)
HK (1) HK1059683A1 (no)
NO (1) NO20032188L (no)
TW (1) TW515051B (no)
WO (1) WO2002045176A1 (no)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624029B2 (en) * 2000-11-30 2003-09-23 Atmel Corporation Method of fabricating a self-aligned non-volatile memory cell
DE10209784A1 (de) * 2001-09-01 2003-12-04 Univ Stuttgart Inst Fuer Chemi Sulfinatgruppen enthaltende Oligomere und Polymere und Verfahren zu ihrer Herstellung
US6831325B2 (en) * 2002-12-20 2004-12-14 Atmel Corporation Multi-level memory cell with lateral floating spacers
US6767791B1 (en) * 2003-02-10 2004-07-27 Advanced Micro Devices, Inc. Structure and method for suppressing oxide encroachment in a floating gate memory cell
US6998670B2 (en) * 2003-04-25 2006-02-14 Atmel Corporation Twin EEPROM memory transistors with subsurface stepped floating gates
US6888192B2 (en) * 2003-04-25 2005-05-03 Atmel Corporation Mirror image non-volatile memory cell transistor pairs with single poly layer
US6919242B2 (en) * 2003-04-25 2005-07-19 Atmel Corporation Mirror image memory cell transistor pairs featuring poly floating spacers
US6822285B1 (en) * 2003-07-31 2004-11-23 Atmel Corporation EEPROM with multi-member floating gate
US20050239250A1 (en) * 2003-08-11 2005-10-27 Bohumil Lojek Ultra dense non-volatile memory array
JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
US7098106B2 (en) * 2004-07-01 2006-08-29 Atmel Corporation Method of making mirror image memory cell transistor pairs featuring poly floating spacers
US20060046402A1 (en) * 2004-08-31 2006-03-02 Micron Technology, Inc. Flash cell structures and methods of formation
US8099783B2 (en) * 2005-05-06 2012-01-17 Atmel Corporation Security method for data protection
US20080119022A1 (en) * 2006-11-22 2008-05-22 Atmel Corporation Method of making eeprom transistors
KR101334844B1 (ko) * 2011-12-29 2013-12-05 주식회사 동부하이텍 싱글 폴리형 이이피롬과 그 제조 방법
CN104465353B (zh) * 2014-11-28 2018-01-26 上海华力微电子有限公司 Ono介质层的制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
US5021848A (en) 1990-03-13 1991-06-04 Chiu Te Long Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
US5108939A (en) * 1990-10-16 1992-04-28 National Semiconductor Corp. Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region
US5338952A (en) * 1991-06-07 1994-08-16 Sharp Kabushiki Kaisha Non-volatile memory
US5268585A (en) * 1991-07-01 1993-12-07 Sharp Kabushiki Kaisha Non-volatile memory and method of manufacturing the same
US5618742A (en) 1992-01-22 1997-04-08 Macronix Internatioal, Ltd. Method of making flash EPROM with conductive sidewall spacer contacting floating gate
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory
US5477068A (en) 1992-03-18 1995-12-19 Rohm Co., Ltd. Nonvolatile semiconductor memory device
JP3317459B2 (ja) * 1993-04-30 2002-08-26 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
US5479368A (en) 1993-09-30 1995-12-26 Cirrus Logic, Inc. Spacer flash cell device with vertically oriented floating gate
US5640031A (en) 1993-09-30 1997-06-17 Keshtbod; Parviz Spacer flash cell process
GB2292008A (en) * 1994-07-28 1996-02-07 Hyundai Electronics Ind A split gate type flash eeprom cell
US5543339A (en) * 1994-08-29 1996-08-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
JP3403877B2 (ja) 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
KR100192546B1 (ko) * 1996-04-12 1999-06-15 구본준 플래쉬 메모리 및 이의 제조방법
US5703388A (en) * 1996-07-19 1997-12-30 Mosel Vitelic Inc. Double-poly monos flash EEPROM cell
US5793079A (en) * 1996-07-22 1998-08-11 Catalyst Semiconductor, Inc. Single transistor non-volatile electrically alterable semiconductor memory device
DE19638969C2 (de) 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US5963806A (en) 1996-12-09 1999-10-05 Mosel Vitelic, Inc. Method of forming memory cell with built-in erasure feature
US6392267B1 (en) * 1997-04-25 2002-05-21 Alliance Semiconductor Corporation Flash EPROM array with self-aligned source contacts and programmable sector erase architecture
US6060766A (en) * 1997-08-25 2000-05-09 Advanced Micro Devices, Inc. Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers
US5879993A (en) * 1997-09-29 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride spacer technology for flash EPROM
US5918124A (en) * 1997-10-06 1999-06-29 Vanguard International Semiconductor Corporation Fabrication process for a novel multi-storage EEPROM cell
JP3183396B2 (ja) 1997-11-20 2001-07-09 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
JPH11186416A (ja) 1997-12-19 1999-07-09 Rohm Co Ltd 不揮発性半導体記憶装置およびその製造方法
US5972752A (en) 1997-12-29 1999-10-26 United Semiconductor Corp. Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile
US6091101A (en) * 1998-03-30 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Multi-level flash memory using triple well
US6043530A (en) 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
TW390028B (en) * 1998-06-08 2000-05-11 United Microelectronics Corp A flash memory structure and its manufacturing
US5879992A (en) * 1998-07-15 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating step poly to improve program speed in split gate flash
US6074914A (en) 1998-10-30 2000-06-13 Halo Lsi Design & Device Technology, Inc. Integration method for sidewall split gate flash transistor
US6160287A (en) * 1998-12-08 2000-12-12 United Microelectronics Corp. Flash memory
TW444402B (en) * 1999-03-11 2001-07-01 Mosel Vitelic Inc Flash memory cell and its manufacturing method
KR100308128B1 (ko) * 1999-08-24 2001-11-01 김영환 비휘발성 메모리 소자 및 그의 제조 방법
US6465835B1 (en) * 1999-09-27 2002-10-15 Advanced Micro Devices, Inc. Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate
US20020000605A1 (en) * 2000-06-28 2002-01-03 Chun-Mai Liu Method of fabricating high-coupling ratio split gate flash memory cell array

Also Published As

Publication number Publication date
NO20032188L (no) 2003-07-17
WO2002045176A1 (en) 2002-06-06
EP1340264A1 (en) 2003-09-03
KR20030057560A (ko) 2003-07-04
CN1478303A (zh) 2004-02-25
US20020063278A1 (en) 2002-05-30
WO2002045176B1 (en) 2002-08-22
US6841823B2 (en) 2005-01-11
HK1059683A1 (en) 2004-07-09
JP2004519094A (ja) 2004-06-24
TW515051B (en) 2002-12-21
CN1220274C (zh) 2005-09-21
USRE40486E1 (en) 2008-09-09
AU2002214585A1 (en) 2002-06-11
CA2427232A1 (en) 2002-06-06
US6479351B1 (en) 2002-11-12

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Legal Events

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FC2A Withdrawal, rejection or dismissal of laid open patent application