NO20020847D0 - Referansecelle for höyhastighetslesing i ikke-flyktige hukommelsekretser - Google Patents

Referansecelle for höyhastighetslesing i ikke-flyktige hukommelsekretser

Info

Publication number: NO20020847D0
Authority: NO; Norway
Prior art keywords: high speed; volatile memory; reference cell; memory circuits; speed reading
Prior art date: 2000-06-21

Application number

NO20020847A

Other languages

English (en)

Other versions

NO20020847L (no

Inventor

Saroj Pathak

James E Payne

Jagdish Pathak

Original Assignee

Atmel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-06-21

Filing date

2002-02-21

Publication date

2002-02-21

2002-02-21 Application filed by Atmel Corp filed Critical Atmel Corp

2002-02-21 Publication of NO20020847D0 publication Critical patent/NO20020847D0/no

2002-02-21 Publication of NO20020847L publication Critical patent/NO20020847L/no

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators

NO20020847A 2000-06-21 2002-02-21 Referansecelle for höyhastighetslesing i ikke-flyktige hukommelsekretser NO20020847L (no)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US09/602,108 US6411549B1 (en)	2000-06-21	2000-06-21	Reference cell for high speed sensing in non-volatile memories
PCT/US2001/040736 WO2001099114A1 (en)	2000-06-21	2001-05-14	Reference cell for high speed sensing in non-volatile memories

Publications (2)

Publication Number	Publication Date
NO20020847D0 true NO20020847D0 (no)	2002-02-21
NO20020847L NO20020847L (no)	2002-02-21

Family

ID=24409999

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO20020847A NO20020847L (no)	2000-06-21	2002-02-21	Referansecelle for höyhastighetslesing i ikke-flyktige hukommelsekretser

Country Status (13)

Country	Link
US (1)	US6411549B1 (no)
EP (1)	EP1297535B1 (no)
JP (1)	JP2003536200A (no)
KR (1)	KR20030009285A (no)
CN (1)	CN1200433C (no)
AU (1)	AU2001261842A1 (no)
CA (1)	CA2391331A1 (no)
DE (1)	DE60132088T2 (no)
HK (1)	HK1046983B (no)
MY (1)	MY134250A (no)
NO (1)	NO20020847L (no)
TW (1)	TW512353B (no)
WO (1)	WO2001099114A1 (no)

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US6922820B1 (en) *	2000-10-12	2005-07-26	Cypress Semiconductor Corp.	Circuit for generating silicon ID for PLDS
JP4663094B2 (ja) *	2000-10-13	2011-03-30	株式会社半導体エネルギー研究所	半導体装置
US6587378B2 (en) *	2000-12-13	2003-07-01	Texas Instruments Incorporated	Apparatus and method for refreshing a flash memory unit
US6697283B2 (en) *	2001-01-03	2004-02-24	Micron Technology, Inc.	Temperature and voltage compensated reference current generator
US6940772B1 (en) *	2002-03-18	2005-09-06	T-Ram, Inc	Reference cells for TCCT based memory cells
US6799256B2 (en) *	2002-04-12	2004-09-28	Advanced Micro Devices, Inc.	System and method for multi-bit flash reads using dual dynamic references
US6687162B1 (en) *	2002-04-19	2004-02-03	Winbond Electronics Corporation	Dual reference cell for split-gate nonvolatile semiconductor memory
US6768677B2 (en) *	2002-11-22	2004-07-27	Advanced Micro Devices, Inc.	Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage
JP2004342276A (ja) *	2003-05-19	2004-12-02	Sharp Corp	半導体記憶装置およびそのプログラム方法
JP4286085B2 (ja) *	2003-07-28	2009-06-24	Ｏｋｉセミコンダクタ株式会社	増幅器及びそれを用いた半導体記憶装置
US6970037B2 (en) *	2003-09-05	2005-11-29	Catalyst Semiconductor, Inc.	Programmable analog bias circuits using floating gate CMOS technology
CN1914690A (zh) *	2004-01-28	2007-02-14	皇家飞利浦电子股份有限公司	具有rom矩阵的集成电路器件
US7149123B2 (en) *	2004-04-06	2006-12-12	Catalyst Semiconductor, Inc.	Non-volatile CMOS reference circuit
US6967871B1 (en)	2004-05-19	2005-11-22	Taiwan Semiconductor Manufacturing Co., Ltd.	Reference sensing circuit
US7142456B2 (en) *	2004-10-08	2006-11-28	Lexmark International	Distributed programmed memory cells used as memory reference currents
JP4522217B2 (ja) *	2004-10-15	2010-08-11	パナソニック株式会社	不揮発性半導体メモリ
US7312641B2 (en) *	2004-12-28	2007-12-25	Spansion Llc	Sense amplifiers with high voltage swing
ITMI20051075A1 (it) *	2005-06-10	2006-12-11	Atmel Corp	"sistema e metodo per eguagliare la resistenza in una memoria non volatile"
JP2007087441A (ja) *	2005-09-20	2007-04-05	Matsushita Electric Ind Co Ltd	不揮発性半導体記憶装置
US7558907B2 (en) *	2006-10-13	2009-07-07	Spansion Llc	Virtual memory card controller
KR100837282B1 (ko) *	2007-06-14	2008-06-12	삼성전자주식회사	비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템,그것의 프로그램 방법 및 읽기 방법
KR101046556B1 (ko) *	2008-03-17	2011-07-05	엘피다 메모리 가부시키가이샤	단일 종단 감지 증폭기를 갖는 반도체 디바이스
US7813201B2 (en) *	2008-07-08	2010-10-12	Atmel Corporation	Differential sense amplifier
US7796437B2 (en) *	2008-09-23	2010-09-14	Sandisk 3D Llc	Voltage regulator with reduced sensitivity of output voltage to change in load current
US7995387B2 (en) *	2009-01-30	2011-08-09	Sandisk Il Ltd.	System and method to read data subject to a disturb condition
US8374026B2 (en) *	2009-01-30	2013-02-12	Sandisk Il Ltd.	System and method of reading data using a reliability measure
US7856528B1 (en)	2009-08-11	2010-12-21	Texas Memory Systems, Inc.	Method and apparatus for protecting data using variable size page stripes in a FLASH-based storage system
US7818525B1 (en)	2009-08-12	2010-10-19	Texas Memory Systems, Inc.	Efficient reduction of read disturb errors in NAND FLASH memory
US8189379B2 (en) *	2009-08-12	2012-05-29	Texas Memory Systems, Inc.	Reduction of read disturb errors in NAND FLASH memory
KR101094904B1 (ko) *	2009-09-30	2011-12-15	주식회사 하이닉스반도체	기준전압 생성 회로 및 방법, 이를 이용한 상변화 메모리 장치 및 리드 방법
CN102110475B (zh) *	2011-01-27	2013-09-04	深圳市国微电子有限公司	一种存储器的读出电路及其从存储器中读出数据的方法
CN103377687B (zh) *	2012-04-27	2017-04-05	上海复旦微电子集团股份有限公司	读出放大电路及存储器
CN103377708B (zh) *	2012-04-27	2016-08-03	上海复旦微电子集团股份有限公司	用于非易失性存储器的读出放大电路及存储器
CN104464803B (zh) *	2013-09-18	2018-07-20	北京兆易创新科技股份有限公司	一种读电压的产生装置、闪存存储系统
US9786348B1 (en) *	2016-04-11	2017-10-10	Micron Technology, Inc.	Dynamic adjustment of memory cell digit line capacitance
KR102319710B1 (ko) *	2016-11-21	2021-10-29	매그나칩 반도체 유한회사	센스 앰프 구동 장치

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GB2089612B (en) *	1980-12-12	1984-08-30	Tokyo Shibaura Electric Co	Nonvolatile semiconductor memory device
IT1228822B (it) *	1989-03-23	1991-07-04	Sgs Thomson Microelectronics	Cella di riferimento per la lettura di dispositivi di memoria eeprom.
EP0424172B1 (en)	1989-10-20	1995-01-18	Fujitsu Limited	Nonvolatile semiconductor memory apparatus
JP2853217B2 (ja) *	1989-11-21	1999-02-03	日本電気株式会社	半導体メモリ
US5608676A (en)	1993-08-31	1997-03-04	Crystal Semiconductor Corporation	Current limited current reference for non-volatile memory sensing
DE69621323T2 (de) *	1995-02-10	2002-09-05	Micron Technology, Inc.	Schneller leseverstärker für einen flash-speicher
JP3132637B2 (ja) *	1995-06-29	2001-02-05	日本電気株式会社	不揮発性半導体記憶装置
US5572474A (en)	1995-07-18	1996-11-05	Cypress Semiconductor Corporation	Pseudo-differential sense amplifier
US5790453A (en)	1996-10-24	1998-08-04	Micron Quantum Devices, Inc.	Apparatus and method for reading state of multistate non-volatile memory cells
JP3039458B2 (ja) *	1997-07-07	2000-05-08	日本電気株式会社	不揮発性半導体メモリ
US5859796A (en) *	1997-12-16	1999-01-12	Advanced Micro Devices, Inc.	Programming of memory cells using connected floating gate analog reference cell
JP3237610B2 (ja) *	1998-05-19	2001-12-10	日本電気株式会社	不揮発性半導体記憶装置

2000
- 2000-06-21 US US09/602,108 patent/US6411549B1/en not_active Expired - Fee Related
2001
- 2001-05-14 EP EP01935781A patent/EP1297535B1/en not_active Expired - Lifetime
- 2001-05-14 JP JP2002503874A patent/JP2003536200A/ja not_active Withdrawn
- 2001-05-14 AU AU2001261842A patent/AU2001261842A1/en not_active Abandoned
- 2001-05-14 CA CA002391331A patent/CA2391331A1/en not_active Abandoned
- 2001-05-14 KR KR1020027002144A patent/KR20030009285A/ko not_active Withdrawn
- 2001-05-14 DE DE60132088T patent/DE60132088T2/de not_active Expired - Fee Related
- 2001-05-14 WO PCT/US2001/040736 patent/WO2001099114A1/en active IP Right Grant
- 2001-05-14 HK HK02108172.1A patent/HK1046983B/zh not_active IP Right Cessation
- 2001-05-14 CN CNB018010490A patent/CN1200433C/zh not_active Expired - Fee Related
- 2001-06-11 MY MYPI20012718 patent/MY134250A/en unknown
- 2001-06-18 TW TW090114695A patent/TW512353B/zh not_active IP Right Cessation
2002
- 2002-02-21 NO NO20020847A patent/NO20020847L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
WO2001099114A1 (en)	2001-12-27
US6411549B1 (en)	2002-06-25
HK1046983B (zh)	2005-08-12
AU2001261842A1 (en)	2002-01-02
CN1200433C (zh)	2005-05-04
JP2003536200A (ja)	2003-12-02
EP1297535A1 (en)	2003-04-02
DE60132088T2 (de)	2008-12-11
NO20020847L (no)	2002-02-21
DE60132088D1 (de)	2008-02-07
TW512353B (en)	2002-12-01
CA2391331A1 (en)	2001-12-27
EP1297535B1 (en)	2007-12-26
HK1046983A1 (en)	2003-01-30
MY134250A (en)	2007-11-30
KR20030009285A (ko)	2003-01-29
CN1366677A (zh)	2002-08-28

Publication	Publication Date	Title
NO20020847D0 (no)	2002-02-21	Referansecelle for höyhastighetslesing i ikke-flyktige hukommelsekretser
DE60119199D1 (de)	2006-06-08	Speicherzelle
DE10195853T1 (de)	2003-05-22	Verbesserte Speicherzelle hoher Dichte
DE10085013T1 (de)	2002-10-31	Anordnen von in nicht-flüchtigen wiederprogrammierbaren Halbleiterspeichern gespeicherten Informationen
DE60125932D1 (de)	2007-02-22	Nichtflüchtige Halbleiterspeicher
DE60121865D1 (de)	2006-09-14	Nichtflüchtige Halbleiterspeicheranordnung
DE69923244D1 (de)	2005-02-24	Magnetoresistiven Speicheranordnungen
DE60126383D1 (de)	2007-03-22	Nichtflüchtige Halbleiterspeicheranordnung
DE50111881D1 (de)	2007-03-08	MRAM-Speicher
DE69936028D1 (de)	2007-06-21	Nichtflüchtiger Halbleiterspeicher
DE60000280D1 (de)	2002-08-29	Halbleiterspeicheranordnung mit verringertem Stromverbrauch bei Datenhaltemodus
DE60034712D1 (de)	2007-06-14	Speicherkarte
DE69937259D1 (de)	2007-11-15	Nichtflüchtiges Speicherregister
DE60005920D1 (de)	2003-11-20	Speicherkarte
DE50000262D1 (de)	2002-08-08	Schreib-/lesearchitektur für mram
DE50106823D1 (de)	2005-08-25	Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden auslesen von mram-speicherzellen
DE602004004253D1 (de)	2007-02-22	Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen
DE60032644D1 (de)	2007-02-08	Halbleiter-speicherbaustein
DE60301119D1 (de)	2005-09-01	Nichtflüchtige SRAM Speicherzelle
DE60037786D1 (de)	2008-03-06	Nichtflüchtiger Halbleiterspeicher mit Zwei-Bitzellen
DE60043485D1 (de)	2010-01-21	Nichtflüchtiger Halbleiterspeicher
NO20024781D0 (no)	2002-10-03	Sidemodus-sletting i et flash-minne oppsett
DE69627152D1 (de)	2003-05-08	Leseschaltung für Halbleiter-Speicherzellen
DE50014731D1 (de)	2007-12-06	Speicherzellenanordnung
IT1319037B1 (it)	2003-09-23	Circuito di lettura di memorie non volatili

Legal Events

Date	Code	Title	Description
2006-09-11	FC2A	Withdrawal, rejection or dismissal of laid open patent application