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NL8903046A - Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan. - Google Patents

Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan. Download PDF

Info

Publication number
NL8903046A
NL8903046A NL8903046A NL8903046A NL8903046A NL 8903046 A NL8903046 A NL 8903046A NL 8903046 A NL8903046 A NL 8903046A NL 8903046 A NL8903046 A NL 8903046A NL 8903046 A NL8903046 A NL 8903046A
Authority
NL
Netherlands
Prior art keywords
layer
radiation
diode laser
semiconductor
active
Prior art date
Application number
NL8903046A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8903046A priority Critical patent/NL8903046A/nl
Priority to EP90203222A priority patent/EP0432843B1/en
Priority to DE69018790T priority patent/DE69018790T2/de
Priority to CN90109961.9A priority patent/CN1027117C/zh
Priority to JP2409848A priority patent/JPH03253089A/ja
Priority to US07/627,074 priority patent/US5113405A/en
Publication of NL8903046A publication Critical patent/NL8903046A/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL8903046A 1989-12-12 1989-12-12 Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan. NL8903046A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8903046A NL8903046A (nl) 1989-12-12 1989-12-12 Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan.
EP90203222A EP0432843B1 (en) 1989-12-12 1990-12-07 Semiconductor diode laser and method of manufacturing such a laser
DE69018790T DE69018790T2 (de) 1989-12-12 1990-12-07 Halbleiterdiodenlaser und Verfahren zur Herstellung desselben.
CN90109961.9A CN1027117C (zh) 1989-12-12 1990-12-08 半导体二极管激光器及其制造方法
JP2409848A JPH03253089A (ja) 1989-12-12 1990-12-12 半導体ダイオードレーザ及びその製造方法
US07/627,074 US5113405A (en) 1989-12-12 1990-12-12 Semiconductor diode laser having a stepped effective refractive index

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8903046 1989-12-12
NL8903046A NL8903046A (nl) 1989-12-12 1989-12-12 Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
NL8903046A true NL8903046A (nl) 1991-07-01

Family

ID=19855773

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8903046A NL8903046A (nl) 1989-12-12 1989-12-12 Halfgeleiderdiodelaser en werkwijze ter vervaardiging daarvan.

Country Status (6)

Country Link
US (1) US5113405A (zh)
EP (1) EP0432843B1 (zh)
JP (1) JPH03253089A (zh)
CN (1) CN1027117C (zh)
DE (1) DE69018790T2 (zh)
NL (1) NL8903046A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996033537A2 (en) * 1995-04-19 1996-10-24 Philips Electronics N.V. Method of manufacturing an optoelectronic semiconductor device, in particular a semiconductor diode laser
US7069569B2 (en) * 2000-02-01 2006-06-27 Research Investment Network, Inc. Near-field optical head system with integrated slider and laser
CN100403562C (zh) * 2005-03-15 2008-07-16 金芃 垂直结构的半导体芯片或器件
JP2009105184A (ja) * 2007-10-23 2009-05-14 Sharp Corp 窒化物系半導体レーザ素子とその製造方法
US10658813B2 (en) * 2017-06-09 2020-05-19 Nlight, Inc. Low divergence high brightness broad area lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568890A (en) * 1979-06-27 1981-01-29 Nec Corp Semiconductor laser and manufacture thereof
US4581742A (en) * 1984-04-10 1986-04-08 Rca Corporation Semiconductor laser having a non-absorbing passive region with beam guiding
JPS63110784A (ja) * 1986-10-29 1988-05-16 Seiko Epson Corp 半導体レ−ザ
JPS63142692A (ja) * 1986-12-04 1988-06-15 Nec Corp 半導体レ−ザ装置
US4727051A (en) * 1986-12-15 1988-02-23 Stauffer Chemical Company Production of halide-and alkoxy-containing magnesium compositions
DE3642988A1 (de) * 1986-12-17 1988-06-30 Schering Ag Herstellung von dialkyl(alkyldimethylsilanolato)aluminium-verbindungen
JPS6477188A (en) * 1987-09-18 1989-03-23 Seiko Epson Corp Semiconductor laser

Also Published As

Publication number Publication date
DE69018790D1 (de) 1995-05-24
US5113405A (en) 1992-05-12
CN1052576A (zh) 1991-06-26
EP0432843A1 (en) 1991-06-19
JPH03253089A (ja) 1991-11-12
EP0432843B1 (en) 1995-04-19
DE69018790T2 (de) 1995-12-07
CN1027117C (zh) 1994-12-21

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