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NL7613464A - Halfgeleiderinrichting, bestand tegen hoge spanningen, en werkwijze voor het vervaardigen daarvan. - Google Patents

Halfgeleiderinrichting, bestand tegen hoge spanningen, en werkwijze voor het vervaardigen daarvan.

Info

Publication number
NL7613464A
NL7613464A NL7613464A NL7613464A NL7613464A NL 7613464 A NL7613464 A NL 7613464A NL 7613464 A NL7613464 A NL 7613464A NL 7613464 A NL7613464 A NL 7613464A NL 7613464 A NL7613464 A NL 7613464A
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
high voltage
voltage resistance
resistance
Prior art date
Application number
NL7613464A
Other languages
English (en)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7613464A publication Critical patent/NL7613464A/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
NL7613464A 1975-12-08 1976-12-02 Halfgeleiderinrichting, bestand tegen hoge spanningen, en werkwijze voor het vervaardigen daarvan. NL7613464A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145041A JPS5269587A (en) 1975-12-08 1975-12-08 Device and manufacture for high voltage resisting semiconductor

Publications (1)

Publication Number Publication Date
NL7613464A true NL7613464A (nl) 1977-06-10

Family

ID=15376014

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7613464A NL7613464A (nl) 1975-12-08 1976-12-02 Halfgeleiderinrichting, bestand tegen hoge spanningen, en werkwijze voor het vervaardigen daarvan.

Country Status (4)

Country Link
US (1) US4089021A (nl)
JP (1) JPS5269587A (nl)
DE (1) DE2655400A1 (nl)
NL (1) NL7613464A (nl)

Families Citing this family (39)

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Publication number Priority date Publication date Assignee Title
JPS5457865A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Manufacture of semiconductor device
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
JPS5516418A (en) * 1978-07-21 1980-02-05 Hitachi Ltd Manufacturing method of semiconductor device
DE2835330C3 (de) * 1978-08-11 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung
JPS5534455A (en) * 1978-08-31 1980-03-11 Nec Corp Integrated circuit of semiconductor
JPS5555559A (en) * 1978-10-19 1980-04-23 Toshiba Corp Method of fabricating semiconductor device
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
JPS55146960A (en) * 1979-05-02 1980-11-15 Hitachi Ltd Manufacture of integrated circuit device
US4251300A (en) * 1979-05-14 1981-02-17 Fairchild Camera And Instrument Corporation Method for forming shaped buried layers in semiconductor devices utilizing etching, epitaxial deposition and oxide formation
JPS55160443A (en) * 1979-05-22 1980-12-13 Semiconductor Res Found Manufacture of semiconductor integrated circuit device
US4272302A (en) * 1979-09-05 1981-06-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
JPS5648168A (en) * 1979-09-28 1981-05-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit unit and its preparation
JPS5676560A (en) * 1979-11-28 1981-06-24 Hitachi Ltd Semiconductor device
JPS5824018B2 (ja) * 1979-12-21 1983-05-18 富士通株式会社 バイポ−ラｉｃの製造方法
US4408386A (en) * 1980-12-12 1983-10-11 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor integrated circuit devices
JPS5880849A (ja) * 1981-11-10 1983-05-16 Toshiba Corp 半導体装置
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique
US4636269A (en) * 1983-11-18 1987-01-13 Motorola Inc. Epitaxially isolated semiconductor device process utilizing etch and refill technique
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
EP0144865B1 (en) * 1983-12-05 1991-06-26 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4599792A (en) * 1984-06-15 1986-07-15 International Business Machines Corporation Buried field shield for an integrated circuit
US4933733A (en) * 1985-06-03 1990-06-12 Advanced Micro Devices, Inc. Slot collector transistor
JP2515745B2 (ja) * 1986-07-14 1996-07-10 株式会社日立製作所 半導体装置の製造方法
US5332920A (en) * 1988-02-08 1994-07-26 Kabushiki Kaisha Toshiba Dielectrically isolated high and low voltage substrate regions
KR900015352A (ko) * 1989-03-14 1990-10-26 아오이 죠이치 전하전송 디바이스를 갖춘 반도체장치
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
JPH07105458B2 (ja) * 1989-11-21 1995-11-13 株式会社東芝 複合型集積回路素子
JPH03263351A (ja) * 1990-02-27 1991-11-22 Oki Electric Ind Co Ltd 半導体基板の製造方法
US5077594A (en) * 1990-03-16 1991-12-31 Motorola, Inc. Integrated high voltage transistors having minimum transistor to transistor crosstalk
KR960015347B1 (ko) * 1990-09-10 1996-11-09 후지쓰 가부시끼가이샤 반도체장치
JP3562611B2 (ja) * 1996-11-05 2004-09-08 ソニー株式会社 半導体装置及びその製造方法
JPH10284753A (ja) * 1997-04-01 1998-10-23 Sony Corp 半導体装置及びその製造方法
US6365447B1 (en) 1998-01-12 2002-04-02 National Semiconductor Corporation High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth
US7067383B2 (en) * 2004-03-08 2006-06-27 Intersil Americas, Inc. Method of making bipolar transistors and resulting product
JP4982948B2 (ja) * 2004-08-19 2012-07-25 富士電機株式会社 半導体装置の製造方法
US7776672B2 (en) * 2004-08-19 2010-08-17 Fuji Electric Systems Co., Ltd. Semiconductor device and manufacturing method thereof
US20100032766A1 (en) * 2006-06-02 2010-02-11 Agere Systems Inc. Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance
US7737526B2 (en) * 2007-03-28 2010-06-15 Advanced Analogic Technologies, Inc. Isolated trench MOSFET in epi-less semiconductor sustrate
CN109686780B (zh) * 2017-10-19 2023-06-09 中国电子科技集团公司第四十四研究所 硅基高电流传输比双达林顿晶体管及其制作方法

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US3993512A (en) * 1971-11-22 1976-11-23 U.S. Philips Corporation Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy

Also Published As

Publication number Publication date
JPS5269587A (en) 1977-06-09
DE2655400A1 (de) 1977-06-23
US4089021A (en) 1978-05-09

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