NL239104A - - Google Patents
Info
- Publication number
- NL239104A NL239104A NL239104DA NL239104A NL 239104 A NL239104 A NL 239104A NL 239104D A NL239104D A NL 239104DA NL 239104 A NL239104 A NL 239104A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/125—Shapes of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US737883A US2959504A (en) | 1958-05-26 | 1958-05-26 | Semiconductive current limiters |
Publications (1)
Publication Number | Publication Date |
---|---|
NL239104A true NL239104A (xx) | 1900-01-01 |
Family
ID=24965687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL239104D NL239104A (xx) | 1958-05-26 |
Country Status (7)
Country | Link |
---|---|
US (1) | US2959504A (xx) |
JP (1) | JPS374662B1 (xx) |
BE (1) | BE578696A (xx) |
DE (1) | DE1090331B (xx) |
FR (1) | FR1225369A (xx) |
GB (1) | GB923104A (xx) |
NL (1) | NL239104A (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3146135A (en) * | 1959-05-11 | 1964-08-25 | Clevite Corp | Four layer semiconductive device |
NL264084A (xx) * | 1959-06-23 | |||
DE1146152B (de) * | 1959-07-07 | 1963-03-28 | Philips Patentverwaltung | Isolatoranordnung aus Isolationsmaterialien mit bevorzugt elektronischer Leitfaehigkeit, insbesondere fuer elektrische Entladungsroehren |
US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
US3195077A (en) * | 1960-09-06 | 1965-07-13 | Westinghouse Electric Corp | Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section |
US3200017A (en) * | 1960-09-26 | 1965-08-10 | Gen Electric | Gallium arsenide semiconductor devices |
US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
US3239728A (en) * | 1962-07-17 | 1966-03-08 | Gen Electric | Semiconductor switch |
GB1052447A (xx) * | 1962-09-15 | |||
NL300210A (xx) * | 1962-11-14 | |||
US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
US3265909A (en) * | 1963-09-03 | 1966-08-09 | Gen Electric | Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor |
US3284680A (en) * | 1963-11-26 | 1966-11-08 | Gen Electric | Semiconductor switch |
US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
US3996601A (en) * | 1974-07-15 | 1976-12-07 | Hutson Jerald L | Shorting structure for multilayer semiconductor switching devices |
US4364021A (en) * | 1977-10-07 | 1982-12-14 | General Electric Company | Low voltage varistor configuration |
SE409789B (sv) * | 1978-01-10 | 1979-09-03 | Ericsson Telefon Ab L M | Overstromsskyddad transistor |
FR2737343B1 (fr) * | 1995-07-28 | 1997-10-24 | Ferraz | Composant limiteur de courant et procede de realisation |
DE102005023479B4 (de) * | 2005-05-20 | 2011-06-09 | Infineon Technologies Ag | Thyristor mit Zündstufenstruktur |
DE102014107040A1 (de) | 2014-05-19 | 2015-11-19 | Epcos Ag | Elektronisches Bauelement und Verfahren zu dessen Herstellung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84061C (xx) * | 1948-06-26 | |||
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
-
0
- NL NL239104D patent/NL239104A/xx unknown
-
1958
- 1958-05-26 US US737883A patent/US2959504A/en not_active Expired - Lifetime
-
1959
- 1959-05-14 BE BE578696A patent/BE578696A/fr unknown
- 1959-05-16 DE DEW25639A patent/DE1090331B/de active Pending
- 1959-05-19 JP JP1567759A patent/JPS374662B1/ja active Pending
- 1959-05-20 GB GB17134/59A patent/GB923104A/en not_active Expired
- 1959-05-25 FR FR795541A patent/FR1225369A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB923104A (en) | 1963-04-10 |
DE1090331B (de) | 1960-10-06 |
FR1225369A (fr) | 1960-06-30 |
BE578696A (fr) | 1959-08-31 |
JPS374662B1 (xx) | 1962-05-15 |
US2959504A (en) | 1960-11-08 |