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NL189327C - Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan. - Google Patents

Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan.

Info

Publication number
NL189327C
NL189327C NLAANVRAGE7702141,A NL7702141A NL189327C NL 189327 C NL189327 C NL 189327C NL 7702141 A NL7702141 A NL 7702141A NL 189327 C NL189327 C NL 189327C
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
field effect
control area
memory operation
Prior art date
Application number
NLAANVRAGE7702141,A
Other languages
English (en)
Other versions
NL7702141A (nl
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7702141A publication Critical patent/NL7702141A/nl
Application granted granted Critical
Publication of NL189327C publication Critical patent/NL189327C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
NLAANVRAGE7702141,A 1976-03-01 1977-02-28 Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan. NL189327C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2199876A JPS52105784A (en) 1976-03-01 1976-03-01 Mios type memory unit

Publications (2)

Publication Number Publication Date
NL7702141A NL7702141A (nl) 1977-09-05
NL189327C true NL189327C (nl) 1993-03-01

Family

ID=12070678

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7702141,A NL189327C (nl) 1976-03-01 1977-02-28 Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan.

Country Status (6)

Country Link
US (1) US4101921A (nl)
JP (1) JPS52105784A (nl)
CA (1) CA1094221A (nl)
DE (1) DE2708599C2 (nl)
GB (1) GB1553742A (nl)
NL (1) NL189327C (nl)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151538A (en) * 1978-01-30 1979-04-24 Rca Corp. Nonvolatile semiconductive memory device and method of its manufacture
US4307411A (en) * 1978-01-30 1981-12-22 Rca Corporation Nonvolatile semiconductor memory device and method of its manufacture
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device
US4197630A (en) * 1978-08-25 1980-04-15 Rca Corporation Method of fabricating MNOS transistors having implanted channels
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
WO1980001122A1 (en) * 1978-11-27 1980-05-29 Ncr Co Semiconductor memory device
US4353083A (en) * 1978-11-27 1982-10-05 Ncr Corporation Low voltage nonvolatile memory device
DE2923995C2 (de) * 1979-06-13 1985-11-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
US4521796A (en) * 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
JPS57133679A (en) * 1981-02-12 1982-08-18 Toshiba Corp Manufacture of nonvolatile semiconductor memory storage
US4467452A (en) * 1981-02-12 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Nonvolatile semiconductor memory device and method of fabricating the same
JPS5816573A (ja) * 1981-07-22 1983-01-31 Toshiba Corp 不揮発性半導体記憶装置の製造方法
US4455742A (en) * 1982-06-07 1984-06-26 Westinghouse Electric Corp. Method of making self-aligned memory MNOS-transistor
DE3316096A1 (de) * 1983-05-03 1984-11-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von speicherzellen mit einem ein schwebendes gate aufweisenden mos-feldeffekttransistor
US4951103A (en) * 1988-06-03 1990-08-21 Texas Instruments, Incorporated Fast, trench isolated, planar flash EEPROMS with silicided bitlines
JPH02359A (ja) * 1988-09-09 1990-01-05 Hitachi Ltd 半導体集積回路装置の製造方法
JP3321899B2 (ja) * 1992-12-04 2002-09-09 株式会社デンソー 半導体装置
US6479846B2 (en) 2000-03-22 2002-11-12 Ophir Rf, Inc. Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
KR100663344B1 (ko) * 2004-06-17 2007-01-02 삼성전자주식회사 적어도 두 개의 다른 채널농도를 갖는 비휘발성 플래시메모리 소자 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511588B2 (nl) * 1971-11-01 1976-01-19
JPS5330310B2 (nl) * 1972-09-13 1978-08-25
US3877055A (en) * 1972-11-13 1975-04-08 Motorola Inc Semiconductor memory device
JPS571149B2 (nl) * 1974-08-28 1982-01-09

Also Published As

Publication number Publication date
DE2708599A1 (de) 1977-09-08
CA1094221A (en) 1981-01-20
GB1553742A (en) 1979-09-26
DE2708599C2 (de) 1986-10-16
NL7702141A (nl) 1977-09-05
US4101921A (en) 1978-07-18
JPS52105784A (en) 1977-09-05

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
A85 Still pending on 85-01-01
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee