NL190211C - Dynamische halfgeleidergeheugeninrichting. - Google Patents

Dynamische halfgeleidergeheugeninrichting.

Info

Publication number: NL190211C
Authority: NL; Netherlands
Prior art keywords: memory device; semiconductor memory; dynamic semiconductor; dynamic; semiconductor
Prior art date: 1976-11-19

Application number

NLAANVRAGE7712820,A

Other languages

English (en)

Other versions

NL7712820A (nl

NL190211B (nl

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-11-19

Filing date

1977-11-21

Publication date

1993-12-01

1977-11-21 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1978-05-23 Publication of NL7712820A publication Critical patent/NL7712820A/nl

1993-07-01 Publication of NL190211B publication Critical patent/NL190211B/nl

1993-12-01 Application granted granted Critical

1993-12-01 Publication of NL190211C publication Critical patent/NL190211C/nl

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Semiconductor Integrated Circuits (AREA)

NLAANVRAGE7712820,A 1976-11-19 1977-11-21 Dynamische halfgeleidergeheugeninrichting. NL190211C (nl)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP51138341A JPS6041463B2 (ja)	1976-11-19	1976-11-19	ダイナミツク記憶装置

Publications (3)

Publication Number	Publication Date
NL7712820A NL7712820A (nl)	1978-05-23
NL190211B NL190211B (nl)	1993-07-01
NL190211C true NL190211C (nl)	1993-12-01

Family

ID=15219642

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE7712820,A NL190211C (nl)	1976-11-19	1977-11-21	Dynamische halfgeleidergeheugeninrichting.

Country Status (4)

Country	Link
US (2)	US4491858A (nl)
JP (1)	JPS6041463B2 (nl)
DE (1)	DE2751592C2 (nl)
NL (1)	NL190211C (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6041463B2 (ja) *	1976-11-19	1985-09-17	株式会社日立製作所	ダイナミツク記憶装置
DE2855079A1 (de) *	1978-12-20	1980-07-17	Siemens Ag	Halbleiter-speicherschaltung
US4587542A (en) *	1979-10-11	1986-05-06	Texas Instruments Incorporated	Guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM
JPS58194368A (ja) *	1982-05-07	1983-11-12	Mitsubishi Electric Corp	半導体メモリ装置
JPH0658947B2 (ja) *	1984-02-24	1994-08-03	株式会社日立製作所	半導体メモリ装置の製法
JPS60236191A (ja) *	1984-05-08	1985-11-22	Matsushita Electric Ind Co Ltd	半導体記憶装置
US4651183A (en) *	1984-06-28	1987-03-17	International Business Machines Corporation	High density one device memory cell arrays
JPH06105766B2 (ja) *	1984-09-26	1994-12-21	株式会社日立マイコンシステム	半導体集積回路装置の製造方法
US4658283A (en) *	1984-07-25	1987-04-14	Hitachi, Ltd.	Semiconductor integrated circuit device having a carrier trapping trench arrangement
JPS61142591A (ja) *	1984-12-13	1986-06-30	Toshiba Corp	半導体記憶装置
JPH0789569B2 (ja) *	1986-03-26	1995-09-27	株式会社日立製作所	半導体集積回路装置及びその製造方法
KR950001424B1 (en) *	1986-03-28	1995-02-24	Hitachi Ltd	3-transistor dynamic random access memory
JP2629697B2 (ja) *	1987-03-27	1997-07-09	日本電気株式会社	半導体記憶装置
JP2957388B2 (ja) *	1993-08-03	1999-10-04	日本電気アイシーマイコンシステム株式会社	半導体記憶回路
JPH08147968A (ja) *	1994-09-19	1996-06-07	Mitsubishi Electric Corp	ダイナミックメモリ
JPH10223853A (ja) *	1997-02-04	1998-08-21	Mitsubishi Electric Corp	半導体装置
US6678198B2 (en)	2001-03-16	2004-01-13	Broadcom Corporation	Pseudo differential sensing method and apparatus for DRAM cell
US8445946B2 (en) *	2003-12-11	2013-05-21	International Business Machines Corporation	Gated diode memory cells
US20110026323A1 (en)	2009-07-30	2011-02-03	International Business Machines Corporation	Gated Diode Memory Cells
JP5743045B2 (ja) *	2008-07-16	2015-07-01	ピーエスフォールクスコエスエイアールエルＰＳ４ＬｕｘｃｏＳ．ａ．ｒ．ｌ．	半導体記憶装置及び半導体記憶装置におけるメモリアクセス方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4044373A (en) *	1967-11-13	1977-08-23	Hitachi, Ltd.	IGFET with gate protection diode and antiparasitic isolation means
US3573509A (en) *	1968-09-09	1971-04-06	Texas Instruments Inc	Device for reducing bipolar effects in mos integrated circuits
US3798512A (en) *	1970-09-28	1974-03-19	Ibm	Fet device with guard ring and fabrication method therefor
US3748187A (en) *	1971-08-03	1973-07-24	Hughes Aircraft Co	Self-registered doped layer for preventing field inversion in mis circuits
US3771147A (en) *	1972-12-04	1973-11-06	Bell Telephone Labor Inc	Igfet memory system
US3896485A (en) *	1973-12-03	1975-07-22	Fairchild Camera Instr Co	Charge-coupled device with overflow protection
US3879640A (en) *	1974-02-11	1975-04-22	Rca Corp	Protective diode network for MOS devices
JPS5539073B2 (nl) *	1974-12-25	1980-10-08
US4086662A (en) *	1975-11-07	1978-04-25	Hitachi, Ltd.	Memory system with read/write control lines
JPS5279787A (en) *	1975-12-26	1977-07-05	Toshiba Corp	Integrated circuit device
JPS5333542A (en) *	1976-09-10	1978-03-29	Hitachi Ltd	Signal detection circuit
US4110776A (en) *	1976-09-27	1978-08-29	Texas Instruments Incorporated	Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
JPS6041463B2 (ja) *	1976-11-19	1985-09-17	株式会社日立製作所	ダイナミツク記憶装置
JPS5363938A (en) *	1976-11-19	1978-06-07	Hitachi Ltd	Dynamic memory unit

1976
- 1976-11-19 JP JP51138341A patent/JPS6041463B2/ja not_active Expired
1977
- 1977-11-18 DE DE2751592A patent/DE2751592C2/de not_active Expired
- 1977-11-21 NL NLAANVRAGE7712820,A patent/NL190211C/nl not_active IP Right Cessation
1980
- 1980-05-30 US US06/154,826 patent/US4491858A/en not_active Expired - Lifetime
1983
- 1983-04-26 US US06/488,644 patent/US4695864A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS6041463B2 (ja)	1985-09-17
US4695864A (en)	1987-09-22
NL7712820A (nl)	1978-05-23
DE2751592C2 (de)	1983-10-27
JPS5363939A (en)	1978-06-07
DE2751592A1 (de)	1978-05-24
NL190211B (nl)	1993-07-01
US4491858A (en)	1985-01-01

Publication	Publication Date	Title
NL7707297A (nl)	1978-01-09	Halfgeleider-geheugeninrichting.
NL7500550A (nl)	1976-07-20	Halfgeleider-geheugeninrichting.
NL7614537A (nl)	1977-07-01	Halfgeleidergeheugeninrichting.
NL7801879A (nl)	1978-08-23	Halfgeleidergeheugen.
NL7806183A (nl)	1978-12-12	Halfgeleidergeheugen.
NL7607379A (nl)	1977-01-26	Geheugeninrichting.
NL7704226A (nl)	1977-10-18	Halfgeleider laserinrichting.
NL178729C (nl)	1986-05-01	Halfgeleidergeheugen.
NL7704864A (nl)	1977-11-08	Halfgeleidergeheugen.
NL7709931A (nl)	1978-03-14	Halfgeleider-geheugeninrichting.
NL190211C (nl)	1993-12-01	Dynamische halfgeleidergeheugeninrichting.
NL173572C (nl)	1984-02-01	Halfgeleiderinrichting.
NL179244C (nl)	1986-08-01	Halfgeleidergeheugen.
NL7806294A (nl)	1978-12-12	Geintegreerde halfgeleider -geheugeninrichting.
NL7514642A (nl)	1976-06-18	Halfgeleidergeheugeninrichting.
NL7612813A (nl)	1977-05-23	Geheugeninrichting.
DE3072204D1 (de)	1992-12-17	Halbleiterspeicheranordnung.
NL7607984A (nl)	1977-01-25	Halfgeleidergeheugen.
NL7712819A (nl)	1978-05-23	Dynamische geheugeninrichting.
NL7610196A (nl)	1977-03-17	Geheugeninrichting.
NL7600816A (nl)	1976-08-12	Geheugeninrichting.
NL7710360A (nl)	1978-03-28	Halfgeleidergeheugen.
NL7603266A (nl)	1976-10-06	Geheugeninrichting.
NL7701172A (nl)	1978-08-08	Halfgeleidergeheugeninrichting.
DD130698A5 (de)	1978-04-19	Halbleiterspeicher

Legal Events

Date	Code	Title	Description
1984-12-03	BC	A request for examination has been filed
1985-01-01	A85	Still pending on 85-01-01
1998-02-02	V4	Discontinued because of reaching the maximum lifetime of a patent	Free format text: 971121